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Rebecca J. Welty, Ph.D. - Publications

Affiliations: 
2002 University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering, General Physics, Materials Science Engineering
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17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Stevens KS, Welty RJ, Welser RE, Landini BE, Asbeck PM, Hung SC, Lu WP, Feng SC. Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs Ieee Transactions On Electron Devices. 51: 1545-1553. DOI: 10.1109/Ted.2004.834905  0.637
2004 Welty RJ, Xin H, Tu CW, Asbeck PM. Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen Journal of Applied Physics. 95: 327-333. DOI: 10.1063/1.1631075  0.71
2004 Tu CW, Hong YG, André R, Welty RJ, Asbeck PM. Bandgap engineering of GaInNP on GaAs(001) for electronic applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 631-635.  0.52
2003 Welty RJ, Mochizuki K, Lutz CR, Welser RE, Asbeck PM. Design and performance of tunnel collector HBTs for microwave power amplifiers Ieee Transactions On Electron Devices. 50: 894-900. DOI: 10.1109/Ted.2003.812088  0.677
2002 DeLuca PM, Lutz CR, Welser RE, Chi TY, Huang EK, Welty RJ, Asbeck PM. Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions Ieee Electron Device Letters. 23: 582-584. DOI: 10.1109/Led.2002.803761  0.658
2002 Asbeck PM, Welty RJ, Tu CW, Xin HP, Welser RE. Heterojunction bipolar transistors implemented with GaInNAs materials Semiconductor Science and Technology. 17: 898-906. DOI: 10.1088/0268-1242/17/8/319  0.691
2002 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. GaAs/Ga0.89In0.11N0.02As0.98 /GaAs NpN double heterojunction bipolar transistor with low turn-on voltage Solid-State Electronics. 46: 1-5. DOI: 10.1016/S0038-1101(01)00315-X  0.707
2002 Keogh DM, Welty RJ, Lopez-Gonzalez J, Lutz CR, Welser RE, Asbeck PM. GaInP/GaAs Tunnel Collector HBTs: Base-Collector Barrier Height Analysis Proceedings Ieee Lester Eastman Conference On High Performance Devices. 358-363.  0.665
2001 Xin HP, Welty RJ, Hong YG, Tu CW. Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes Journal of Crystal Growth. 227: 558-561. DOI: 10.1016/S0022-0248(01)00771-0  0.307
2001 Welty RJ, Mochizuki K, Lutz CR, Asbeck PM. Tunnel collector GaInP/GaAs HBTs for microwave power amplifiers Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 74-77.  0.704
2000 Xin HP, Welty RJ, Tu CW. GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates Ieee Photonics Technology Letters. 12: 960-962. DOI: 10.1109/68.867974  0.335
2000 Mochizuki K, Welty RJ, Asbeck PM, Lutz CR, Welser RE, Whitney SJ, Pan N. GalnP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-Up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers Ieee Transactions On Electron Devices. 47: 2277-2283. DOI: 10.1109/16.887008  0.657
2000 Mochizuki K, Welty RJ, Asbeck PM. GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics Electronics Letters. 36: 264-265. DOI: 10.1049/El:20000211  0.706
2000 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. Design and characterization of GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Annual Device Research Conference Digest. 145-146.  0.685
2000 Welty RJ, Hong YG, Xin HP, Tu CW, Asbeck PM, Mochizuki K. Nitrogen incorporation in GaInP for novel heterojunction bipolar transistors Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 33-40.  0.568
1999 Chen PF, Hsin YMT, Welty RJ, Asbeck PM, Pierson RL, Zampardi PJ, Ho WJ, Vincent Ho MC, Frank Chang M. Application of GalnP/GaAs DHBT's to power amplifiers for wireless communications Ieee Transactions On Microwave Theory and Techniques. 47: 1433-1438. DOI: 10.1109/22.780391  0.611
1999 Dang XZ, Welty RJ, Qiao D, Asbeck PM, Lau SS, Yu ET, Boutros KS, Redwing JM. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET Electronics Letters. 35: 602-603. DOI: 10.1049/El:19990282  0.658
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