| Year |
Citation |
Score |
| 2015 |
Xu Z, Winklea D, Oh TC, Kim S, Chen STW, Royter Y, Lau M, Valles I, Hitko DA, Li JC, Gu QJ. 0.8/2.2-GHz Programmable Active Bandpass Filters in InP/Si BiCMOS Technology Ieee Transactions On Microwave Theory and Techniques. 63: 1219-1227. DOI: 10.1109/Tmtt.2015.2406701 |
0.365 |
|
| 2015 |
Madsen KN, Gathman TD, Daneshgar S, Oh TC, Li JC, Buckwalter JF. A High-Linearity, 30 GS/s Track-and-Hold Amplifier and Time Interleaved Sample-and-Hold in an InP-on-CMOS Process Ieee Journal of Solid-State Circuits. 50: 2692-2702. DOI: 10.1109/Jssc.2015.2472642 |
0.364 |
|
| 2014 |
Xu Z, McArdle-Moore J, Oh TC, Kim S, Chen STW, Royter Y, Lau M, Valles I, Hitko DA, Li JC. A 0.8/2.4 GHz Tunable Active Band Pass Filter in InP/Si BiCMOS Technology Ieee Microwave and Wireless Components Letters. 24: 47-49. DOI: 10.1109/Lmwc.2013.2287236 |
0.345 |
|
| 2009 |
Li JC, Elliott KR, Matthews DS, Hitko DA, Zehnder D, Royter Y, Patterson PR, Hussain T, Jensen JF. 100 GHz+ gain-bandwidth differential amplifiers in a wafer scale heterogeneously integrated technology using 250 nm InP DHBTs and 130 nm CMOS Ieee Journal of Solid-State Circuits. 44: 2663-2670. DOI: 10.1109/Jssc.2009.2026819 |
0.367 |
|
| 2008 |
Elliott K, Patterson P, Li JC, Royter Y, Hussain T. Transistor Level Integration of Compound Semiconductor Devices and CMOS (CoSMOS Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C01-06 |
0.367 |
|
| 2007 |
Li JC, Royter Y, Hussain T, Chen MY, Fields CH, Rajavel RD, Bui SS, Shi B, Hitko DA, Chow DH, Asbeck PM, Sokolich M. Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs Ieee Transactions On Electron Devices. 54: 398-409. DOI: 10.1109/Ted.2006.890370 |
0.554 |
|
| 2007 |
Li JC, Hussain T, Hitko DA, Royter Y, Fields CH, Milosavljevic I, Thomas S, Rajavel RD, Asbeck PM, Sokolich M. Reduced temperature S-parameter measurements of 400+ GHz sub-micron InP DHBTs Solid-State Electronics. 51: 870-881. DOI: 10.1016/J.Sse.2007.04.012 |
0.536 |
|
| 2007 |
Li JC, Lao Z, Chen MY, Rajavel RD, Thomas S, Bui SS, Shi B, Guinn KV, Duvall JR, Hitko DA, Chow DH, Sokolich M. 200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers Solid-State Electronics. 51: 1-5. DOI: 10.1016/J.Sse.2006.11.012 |
0.4 |
|
| 2006 |
Li JC, Hitko DA, Sokolich M, Asbeck PM. Experimental method to thermally deembed pads from RTH measurements Ieee Transactions On Electron Devices. 53: 2540-2544. DOI: 10.1109/Ted.2006.882270 |
0.546 |
|
| 2006 |
Li JC, Sokolich M, Hussain T, Asbeck PM. Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Solid-State Electronics. 50: 1440-1449. DOI: 10.1016/J.Sse.2006.04.047 |
0.557 |
|
| 2005 |
Li JC, Chen M, Hitko DA, Fields CH, Shi B, Rajavel R, Asbeck PM, Sokolich M. A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) Ieee Electron Device Letters. 26: 136-138. DOI: 10.1109/Led.2004.842734 |
0.494 |
|
| 2004 |
Keogh DM, Li JC, Conway AM, Qiao D, Raychaudhuri S, Asbeck PM, Dupuis RD, Feng M. Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers International Journal of High Speed Electronics and Systems. 14: 831-836. DOI: 10.1142/S0129156404002910 |
0.657 |
|
| 2004 |
Li JC, Keogh DM, Raychaudhuri S, Conway A, Qiao D, Asbeck PM. Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs International Journal of High Speed Electronics and Systems. 14: 825-830. DOI: 10.1142/S0129156404002909 |
0.632 |
|
| 2004 |
Sokolich M, Chen MY, Rajavel RD, Chow DH, Royter Y, Thomas S, Fields CH, Shi B, Bui SS, Li JC, Hitko DA, Elliott KR. InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers Ieee Journal of Solid-State Circuits. 39: 1615-1621. DOI: 10.1109/Jssc.2004.833560 |
0.458 |
|
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