| Year |
Citation |
Score |
| 2023 |
Spann BT, Weber JC, Brubaker MD, Harvey TE, Yang L, Honarvar H, Tsai CN, Treglia AC, Lee M, Hussein MI, Bertness KA. Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances. Advanced Materials (Deerfield Beach, Fla.). e2209779. PMID 36951229 DOI: 10.1002/adma.202209779 |
0.438 |
|
| 2018 |
Brubaker MD, Genter KL, Weber JC, Spann BT, Roshko A, Blanchard PT, Harvey TE, Bertness KA. Core-shell GaN nanowire LEDs by N-polar selective area growth. Proceedings of Spie--the International Society For Optical Engineering. 10725. PMID 33343056 DOI: 10.1117/12.2322832 |
0.543 |
|
| 2018 |
Roshko A, Brubaker M, Blanchard P, Harvey T, Bertness KA. Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates. Crystals. 8. PMID 33101720 |
0.343 |
|
| 2018 |
Blanchard P, Brubaker M, Harvey T, Roshko A, Sanford N, Weber J, Bertness K. Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy Crystals. 8: 178. DOI: 10.3390/CRYST8040178 |
0.505 |
|
| 2017 |
Weber J, Brubaker M, Wallis T, Bertness K. Lithographic sonication patterning of large area GaN nanopillar forests grown on a Si substrate Microelectronic Engineering. 181: 43-46. DOI: 10.1016/J.Mee.2017.07.004 |
0.512 |
|
| 2016 |
Brubaker MD, Duff SM, Harvey TE, Blanchard PT, Roshko A, Sanders AW, Sanford NA, Bertness KA. Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy Crystal Growth and Design. 16: 596-604. DOI: 10.1021/Acs.Cgd.5B00910 |
0.361 |
|
| 2015 |
Brubaker MD, Roshko A, Blanchard PT, Harvey TE, Sanford NA, Bertness KA. Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity Materials Science in Semiconductor Processing. DOI: 10.1016/j.mssp.2016.02.016 |
0.335 |
|
| 2014 |
Blanchard PT, Bertness KA, Brubaker MD, Harvey TE, Sanders AW, Sanford NA. Influence of morphology on current-voltage behavior of GaN nanowires Ieee Transactions On Nanotechnology. 13: 857-863. DOI: 10.1109/Tnano.2014.2328982 |
0.324 |
|
| 2014 |
Bertness KA, Brubaker MD, Harvey TE, Duff SM, Sanders AW, Sanford NA. In situ temperature measurements for selective epitaxy of GaN nanowires Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 590-593. DOI: 10.1002/Pssc.201300545 |
0.308 |
|
| 2013 |
Brubaker MD, Blanchard PT, Schlager JB, Sanders AW, Roshko A, Duff SM, Gray JM, Bright VM, Sanford NA, Bertness KA. On-chip optical interconnects made with gallium nitride nanowires. Nano Letters. 13: 374-7. PMID 23324057 DOI: 10.1021/Nl303510H |
0.485 |
|
| 2012 |
Bertness K, Sanford N, Schlager J, Roshko A, Harvey T, Blanchard P, Brubaker M, Herrero A, Sanders A. Catalyst-free gan nanowires as nanoscale light emitters International Journal of High Speed Electronics and Systems. 21. DOI: 10.1142/S0129156412500036 |
0.324 |
|
| 2011 |
Sanders A, Blanchard P, Bertness K, Brubaker M, Dodson C, Harvey T, Herrero A, Rourke D, Schlager J, Sanford N, Chiaramonti AN, Davydov A, Motayed A, Tsvetkov D. Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires. Nanotechnology. 22: 465703. PMID 22025018 DOI: 10.1088/0957-4484/22/46/465703 |
0.341 |
|
| 2011 |
Brubaker MD, Levin I, Davydov AV, Rourke DM, Sanford NA, Bright VM, Bertness KA. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3633522 |
0.509 |
|
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