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Raphael Tsu - Publications

Affiliations: 
University of North Carolina, Charlotte, Charlotte, NC, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Mathematics
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117 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Yue N, Myers J, Su L, Wang W, Liu F, Tsu R, Zhuang Y, Zhang Y. Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene Journal of Semiconductors. 40: 62001. DOI: 10.1088/1674-4926/40/6/062001  0.421
2016 Asghar M, Shahid MY, Iqbal F, Fatima K, Nawaz MA, Arbi HM, Tsu R. Simple method for the growth of 4H silicon carbide on silicon substrate Aip Advances. 6. DOI: 10.1063/1.4943399  0.368
2015 Asghar M, Fatima K, Ain NU, Tsu R, Mahmood K. Analysis of HRTEM Images of SiC/Si (111) Grown by MBE Technique Materials Today: Proceedings. 2: 5808-5814. DOI: 10.1016/J.Matpr.2015.11.132  0.374
2014 Fullager D, Alisafaee H, Tsu R, Fiddy MA. Epitaxial thin films for hyperbolic metamaterials Proceedings of Spie - the International Society For Optical Engineering. 8995. DOI: 10.1117/12.2038257  0.392
2014 Asghar M, Mahmood K, Hasan MA, Ferguson IT, Tsu R, Willander M. Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy Chinese Physics B. 23: 97101. DOI: 10.1088/1674-1056/23/9/097101  0.367
2014 Tsu R. Man-made superlattice and quantum wells: Past and future Waves in Random and Complex Media. 24: 232-239. DOI: 10.1080/17455030.2014.898866  0.341
2014 Sitaputra W, Hudak JA, Tsu R. A current modulation in the Gd2O3/Si/Gd 2O3 quantum well structure as a mean to monitor oxygen vacancies Aip Conference Proceedings. 1598: 146-149. DOI: 10.1063/1.4878297  0.764
2013 Tsu R, LaFave T. Role of symmetry in conductance, capacitance, and doping of quantum dots The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications. 3-38. DOI: 10.1117/3.1002245.Ch1  0.707
2013 Tsu R. Issues in nanophotonics: Coupling and phase in resonant tunneling Proceedings of Spie - the International Society For Optical Engineering. 8631. DOI: 10.1117/12.2013850  0.362
2013 Sitaputra W, Tsu R. Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4793264  0.782
2013 Asghar M, Mahmood K, Ferguson IT, Raja MYA, Xie YH, Tsu R, Hasan MA. Investigation of VO–Zni native donor complex in MBE grown bulk ZnO Semiconductor Science and Technology. 28: 105019-105019. DOI: 10.1088/0268-1242/28/10/105019  0.375
2013 Yue N, Zhang Y, Tsu R. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer Applied Physics Letters. 102. DOI: 10.1063/1.4793520  0.337
2012 Yue N, Zhang Y, Tsu R. Selective formation of graphene on a Si wafer Materials Research Society Symposium Proceedings. 1407: 9-14. DOI: 10.1557/Opl.2012.658  0.393
2012 Sitaputra W, Tsu R. Enhancement in electron mobility at the interface between Gd 2O3(100) and n-type Si(100) Ecs Transactions. 45: 185-193. DOI: 10.1149/1.3700952  0.786
2012 Sitaputra W, Tsu R. Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100) Applied Physics Letters. 101. DOI: 10.1063/1.4768295  0.781
2011 Tsu R. Superlattices: problems and new opportunities, nanosolids. Nanoscale Research Letters. 6: 127. PMID 21711653 DOI: 10.1186/1556-276X-6-127  0.362
2010 Zhang Y, Tsu R. Binding graphene sheets together using silicon: graphene/silicon superlattice. Nanoscale Research Letters. 5: 805-8. PMID 20672119 DOI: 10.1007/S11671-010-9561-X  0.302
2010 Li JC, Batoni P, Tsu R. Synthesis and characterization of 4H-SiC on C-plane sapphire by C60 and Si molecular beam epitaxy Thin Solid Films. 518: 1658-1660. DOI: 10.1016/J.Tsf.2009.11.088  0.359
2009 Liu K, Tsu R. Photoluminescence enhancement of quantum dots with photonic structures Microelectronics Journal. 40: 741-743. DOI: 10.1016/J.Mejo.2008.11.052  0.358
2009 LaFave T, Tsu R. The value of monophasic capacitance of few-electron systems Microelectronics Journal. 40: 791-795. DOI: 10.1016/J.Mejo.2008.11.035  0.742
2008 LaFave T, Tsu R. Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons Microelectronics Journal. 39: 617-623. DOI: 10.1016/J.Mejo.2007.07.105  0.741
2008 Semet V, Binh VT, Tsu R. Shaping electron field emission by ultrathin multilayered structure cathodes Microelectronics Journal. 39: 607-616. DOI: 10.1016/J.Mejo.2007.07.075  0.389
2008 Tsu R. Revisiting tunneling via Si-quantum dots Microelectronics Journal. 39: 335-343. DOI: 10.1016/J.Mejo.2007.07.008  0.39
2008 Lafave T, Tsu R. A new definition of capacitance of few electron systems Progress in Electromagnetics Research Symposium. 2: 1256-1261.  0.722
2007 Tsu R, Daneshvar K. Optical properties of silicon - SiO2 superlattice Ecs Transactions. 2: 1-11. DOI: 10.1149/1.2408939  0.336
2007 Tsu R. Applying the insight into superlattices and quantum wells for nanostructures: Low-dimensional structures and devices Microelectronics Journal. 38: 959-1012. DOI: 10.1016/J.Mejo.2007.07.102  0.359
2007 Liu K, Schmedake TA, Daneshvar K, Tsu R. Interaction of CdSe/ZnS quantum dots: Among themselves and with matrices Microelectronics Journal. 38: 700-705. DOI: 10.1016/J.Mejo.2007.05.007  0.401
2006 Zhu J, LaFave T, Tsu R. Classical capacitance of few-electron dielectric spheres Microelectronics Journal. 37: 1293-1296. DOI: 10.1016/J.Mejo.2006.07.013  0.765
2006 Tsu R, Quinlan D, Daneshvar K. Silicon-O-M-O-silicon superlattice Microelectronics Journal. 37: 1519-1522. DOI: 10.1016/J.Mejo.2006.05.032  0.471
2005 Semet V, Binh VT, Zhang JP, Yang J, Khan MA, Tsu R. Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 824-830. DOI: 10.1116/1.1864065  0.413
2005 Daneshvar K, Kang K, Tsu R. Three-dimensional quantum dot array Microelectronics Journal. 36: 250-252. DOI: 10.1016/J.Mejo.2005.02.018  0.34
2005 Tsu R. Stability issues in tunneling via quantum systems Microelectronics Journal. 36: 212-215. DOI: 10.1016/J.Mejo.2005.02.007  0.344
2004 Semet V, Binh VT, Zhang JP, Yang J, Khan MA, Tsu R. Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter Applied Physics Letters. 84: 1937-1939. DOI: 10.1063/1.1682701  0.38
2004 Seo YJ, Tsu R. Epitaxially-grown multilayer nanocrystalline Si-O structure for silicon-on-insulator applications Journal of the Korean Physical Society. 45: 120-123.  0.328
2003 Dovidenko K, Lofgren JC, De Freitas F, Seo YJ, Tsu R. Structure and optoelectronic properties of Si/O superlattice Physica E: Low-Dimensional Systems and Nanostructures. 16: 509-516. DOI: 10.1016/S1386-9477(02)00631-8  0.457
2003 Tsu R. Challenges in the implementation of Nanoelectronics Microelectronics Journal. 34: 329-332. DOI: 10.1016/S0026-2692(03)00019-3  0.361
2002 Tsu R. Quantum devices with Multipole-Electrode - Heterojunctions Hybrid Structures International Journal of High Speed Electronics and Systems. 12: 1159-1171. DOI: 10.1142/S0129156402001976  0.359
2002 Yu Y, Greene RF, Tsu R. Cooling by inverse Nottingham effect with resonant tunneling International Journal of High Speed Electronics and Systems. 12: 1083-1100. DOI: 10.1142/S0129156402001939  0.323
2001 Seo YJ, Tsu R. Electronic and optical characteristics of multilayer nanocrystalline silicon/adsorbed oxygen superlattice Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 4799-4801. DOI: 10.1143/Jjap.40.4799  0.47
2001 Tsu DV, Chao BS, Ovshinsky SR, Jones SJ, Yang J, Guha S, Tsu R. Heterogeneity in hydrogenated silicon: Evidence for intermediately ordered chainlike objects Physical Review B - Condensed Matter and Materials Physics. 63: 1253381-1253389. DOI: 10.1103/Physrevb.63.125338  0.33
2001 Seo YJ, Lofgrene JC, Tsu R. Transport through a nine period silicon/oxygen superlattice Applied Physics Letters. 79: 788-790. DOI: 10.1063/1.1394162  0.417
2001 Tsu R, Lofgren JC. Structure of MBE grown semiconductor-atomic superlattices Journal of Crystal Growth. 227: 21-26. DOI: 10.1016/S0022-0248(01)00626-1  0.446
2000 Tsu R. New type of superlattice: An epitaxial semiconductor-atomic superlattice, SAS Materials Research Society Symposium - Proceedings. 592: 351-361. DOI: 10.1557/Proc-592-351  0.455
2000 Zhang Q, Filios A, Lofgren C, Tsu R. Ultra-stable visible electroluminescence from crystalline-Si/O superlattice Physica E: Low-Dimensional Systems and Nanostructures. 8: 365-368. DOI: 10.1016/S1386-9477(99)00261-1  0.429
2000 Tsu R. Si based green ELD: Si-oxygen superlattice Physica Status Solidi (a) Applied Research. 180: 333-338. DOI: 10.1002/1521-396X(200007)180:1<333::Aid-Pssa333>3.0.Co;2-2  0.456
2000 Tsu R. Phenomena in silicon nanostructure devices Applied Physics a: Materials Science and Processing. 71: 391-402.  0.364
1999 Tsu R, Filios A, Lofgren C, Dovidenko K, Wang CG. Silicon Epitaxy on Si ( 100 ) with Adsorbed Oxygen Electrochemical and Solid State Letters. 1: 80-82. DOI: 10.1149/1.1390643  0.411
1998 Tsu R. Room Temperature Silicon Quantum Devices International Journal of High Speed Electronics and Systems. 9: 145-163. DOI: 10.1142/S0129156498000087  0.456
1998 Tsu R, Zhang Q, Filios A. Visible electroluminescence in Si/adsorbed gas superlattice Proceedings of Spie - the International Society For Optical Engineering. 3290: 246-256. DOI: 10.1117/12.298247  0.434
1998 Tsu R, Filios A, Lofgren C, Dovidenko K, Wang CG. Silicon epitaxy on Si(100) with adsorbed oxygen Electrochemical and Solid-State Letters. 1: 80-82.  0.342
1997 Tsu R, Babić D, Loriatti L. Simple model for the dielectric constant of nanoscale silicon particle Journal of Applied Physics. 82: 1327-1329. DOI: 10.1063/1.365762  0.343
1997 Ding J, Tsu R. The determination of activation energy in quantum wells Applied Physics Letters. 71: 2124-2126. DOI: 10.1063/1.119356  0.346
1996 Filios AA, Hefner SS, Tsu R. Correlation of Raman and optical studies with atomic force microscopy in porous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3431-3435. DOI: 10.1116/1.588775  0.341
1996 Tsu R, Filios A, Lofgren C, Cahill D, Vannostrand J, Wang CG. An epitaxial Si/SiO2 superlattice barrier Solid-State Electronics. 40: 221-223. DOI: 10.1016/0038-1101(95)00253-7  0.448
1995 Boeringer DW, Tsu R. Avalanche amplification of multiple resonant tunneling through parallel silicon microcrystallites. Physical Review. B, Condensed Matter. 51: 13337-13343. PMID 9978137 DOI: 10.1103/Physrevb.51.13337  0.318
1995 Ding C, Tsu R. Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode Mrs Proceedings. 378. DOI: 10.1557/Proc-378-757  0.368
1995 Boeringer DW, Tsu R. Photovoltaic characterization of trapping in porous silicon Materials Research Society Symposium - Proceedings. 358: 587-592. DOI: 10.1557/Proc-358-587  0.331
1995 Boeringer DW, Tsu R. Modelling the multiplicity of conductance structures in clusters of silicon quantum dots Materials Research Society Symposium - Proceedings. 358: 569-574. DOI: 10.1557/Proc-358-569  0.34
1994 Filios AA, Tsu R. Comparison of Porous Silicon Etched Gently and Under Illumination Mrs Proceedings. 358. DOI: 10.1557/Proc-358-363  0.364
1994 Tsu R, Xiao HZ, Kim Y‐, Hasan M‐, Birnbaum HK, Greene JE, Lin D‐, Chiang T‐. Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6 Journal of Applied Physics. 75: 240-247. DOI: 10.1063/1.355890  0.44
1994 Boeringer DW, Tsu R. Lateral photovoltaic effect in porous silicon Applied Physics Letters. 65: 2332-2334. DOI: 10.1063/1.112733  0.361
1994 Tsu R, Li XL, Nicollian EH. Slow conductance oscillations in nanoscale silicon clusters of quantum dots Applied Physics Letters. 65: 842-844. DOI: 10.1063/1.112178  0.397
1994 Tsu R, Babić D. Doping of a quantum dot Applied Physics Letters. 64: 1806-1808. DOI: 10.1063/1.111788  0.386
1993 Tsu R, Ioriatti L, Harvey JF, Shen H, Lux RA. Quantum confinement effects on the dielectric constant of porous silicon Materials Research Society Symposium Proceedings. 283: 437-440. DOI: 10.1557/Proc-283-437  0.388
1993 Zhang XJ, Xue G, Agarwal A, Tsu R, Hasan MA, Greene JE, Rockett A. Thermal Desorption of Ultraviolet-Ozone Oxidized Ge(001) for Substrate Cleaning Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2553-2561. DOI: 10.1116/1.578606  0.412
1993 Nicollian EH, Tsu R. Electrical properties of a silicon quantum dot diode Journal of Applied Physics. 74: 4020-4025. DOI: 10.1063/1.354446  0.408
1993 Tsu R. Silicon-based quantum wells Nature. 364: 19-19. DOI: 10.1038/364019A0  0.359
1993 Tsu R. Transport in nanoscale silicon clusters Physica B: Physics of Condensed Matter. 189: 235-240. DOI: 10.1016/0921-4526(93)90165-3  0.502
1993 Tsu R, Lubben D, Bramblett TR, Greene JE. Si2H6 adsorption and dissociation pathways on Ge(001)2 ×1: mechanisms for heterogeneous atomic layer epitaxy Thin Solid Films. 225: 191-195. DOI: 10.1016/0040-6090(93)90154-H  0.301
1993 Tsu R, Lin DS, Greene JE, Chiang TC. Ge segregation and surface roughening during Si growth on Ge(001)2x1 by gas-source molecular beam epitaxy from Si2H6 Materials Research Society Symposium Proceedings. 280: 281-284.  0.316
1993 Xiao HZ, Tsu R, Robertson IM, Birnbaum HK, Greene JE. Growth of Si on Ge(001)2×1 by gas-source molecular beam epitaxy Proceedings - Annual Meeting, Microscopy Society of America. 806-807.  0.344
1992 Babic D, Tsu R, Greene RF. Ground-state energies of one- and two-electron silicon dots in an amorphous silicon dioxide matrix. Physical Review. B, Condensed Matter. 45: 14150-14155. PMID 10001537 DOI: 10.1103/Physrevb.45.14150  0.434
1992 Tan TY, You HM, Yu S, Gitesele UM, Jäger W, Zypman F, Tsu R, Lee ST. Disordering and Characterization Studies of 69 GaAs/ 71 GaAs Isotope Superlattice Structures: The Effect of Outdiffusion of the Substrate Dopant Si Mrs Proceedings. 262: 873. DOI: 10.1557/Proc-262-873  0.415
1992 Harvey JF, Shen H, Morton DC, Lux RA, Zhou W, Dutta MB, Tsu R. Raman and photoluminescence studies of porous silicon Semiconductors. 1675: 134-141. DOI: 10.1117/12.137588  0.376
1992 Babić D, Tsu R, Greene RF. Ground-state energies of one- and two-electron silicon dots in an amorphous silicon dioxide matrix Physical Review B. 45: 14150-14155. DOI: 10.1103/PhysRevB.45.14150  0.329
1992 Tan TY, You HM, Yu S, Gösele UM, Jäger W, Boeringer DW, Zypman F, Tsu R, Lee ST. Disordering in 69GaAs/71GaAs isotope superlattice structures Journal of Applied Physics. 72: 5206-5212. DOI: 10.1063/1.352002  0.37
1992 Zhou W, Shen H, Harvey JF, Lux RA, Dutta M, Lu F, Perry CH, Tsu R, Kalkhoran NM, Namavar F. High pressure optical investigation of porous silicon Applied Physics Letters. 61: 1435-1437. DOI: 10.1063/1.108466  0.408
1992 Tsu R, Shen H, Dutta M. Correlation of Raman and photoluminescence spectra of porous silicon Applied Physics Letters. 60: 112-114. DOI: 10.1063/1.107364  0.37
1992 Cole MW, Harvey JF, Lux RA, Eckart DW, Tsu R. Microstructure of visibly luminescent porous silicon Applied Physics Letters. 60: 2800-2802. DOI: 10.1063/1.106832  0.43
1991 Ye Qy, Tsu R, Nicollian EH. Resonant tunneling via microcrystalline-silicon quantum confinement. Physical Review. B, Condensed Matter. 44: 1806-1811. PMID 9999717 DOI: 10.1103/Physrevb.44.1806  0.365
1991 Ye QY, Tsu R, Nicollian EH. Resonant tunneling via microcrystalline-silicon quantum confinement Physical Review B. 44: 1806-1811. DOI: 10.1103/PhysRevB.44.1806  0.356
1989 Tsu R, Nicollian EH, Reisman A. Passivation of defects in polycrystalline superlattices and quantum well structures Applied Physics Letters. 55: 1897-1899. DOI: 10.1063/1.102328  0.44
1987 Tsu R, Martin D, Gonzalez-Hernandez J, Ovshinsky SR. Passivation of dangling bonds in amorphous Si and Ge by gas adsorption Physical Review B. 35: 2385-2390. DOI: 10.1007/978-1-4684-8745-9_26  0.393
1986 Tsu R, Gonzalez-Hernandez J, Chao SS, Martin D. Dependence of grain size on the substrate temperature of Si and Ge films prepared by evaporation under ultrahigh vacuum Applied Physics Letters. 48: 647-649. DOI: 10.1063/1.96732  0.35
1985 Morrison TI, Paesler MA, Sayers DE, Tsu R, Gonzalez-Hernandez J. Electronic characterization of the ordering of a-Ge with the use of x-ray-absorption near-edge structure. Physical Review. B, Condensed Matter. 31: 5474-5476. PMID 9936519 DOI: 10.1103/Physrevb.31.5474  0.347
1985 Gonzalez-Hernandez J, Azarbayejani GH, Tsu R, Pollak FH. Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study Applied Physics Letters. 47: 1350-1352. DOI: 10.1063/1.96277  0.365
1985 Chao SS, Gonzalez-Hernandez J, Martin D, Tsu R. Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films Applied Physics Letters. 46: 1089-1091. DOI: 10.1063/1.95771  0.373
1985 Woodyard JR, Bowen DR, Gonzalez-Hernandez J, Lee S, Martin D, Tsu R. Dehydrogenation studies of amorphous silicon Journal of Applied Physics. 57: 2243-2248. DOI: 10.1063/1.334369  0.31
1985 Tsu R, Gonzalez-Hernandez J, Pollak FH. Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scattering Solid State Communications. 54: 447-450. DOI: 10.1016/0038-1098(85)90947-0  0.413
1984 Tsu R, Brazil SP. Crystallization, Doping, Orientation and Grain-Size of Microcrystalline Silicon and Germanium Mrs Proceedings. 38: 383. DOI: 10.1557/Proc-38-383  0.321
1984 Pollak FH, Tsu R. Raman characterization of semiconductors revisited Proceedings of Spie - the International Society For Optical Engineering. 452: 26-43. DOI: 10.1117/12.939287  0.32
1984 Gonzalez-Hernandez J, Martin D, Chao SS, Tsu R. Crystallization temperature of ultrahigh vacuum deposited silicon films Applied Physics Letters. 45: 101-103. DOI: 10.1063/1.95002  0.33
1984 Gonzalez-Hernandez J, Martin D, Chao SS, Tsu R. Structural dependence of percolation in germanium films Applied Physics Letters. 44: 672-674. DOI: 10.1063/1.94872  0.371
1984 Tsu R, Hernandez JG, Pollak FH. Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering Journal of Non-Crystalline Solids. 66: 109-114. DOI: 10.1016/0022-3093(84)90307-7  0.405
1983 Paesler MA, Sayers DE, Tsu R, Gonzalez-Hernandez J. Ordering of amorphous germanium prior to crystallization Physical Review B. 28: 4550-4557. DOI: 10.1103/Physrevb.28.4550  0.327
1983 Gonzalez-Hernandez J, Tsu R. Nucleation and growth rate of a-Si alloys Applied Physics Letters. 42: 90-92. DOI: 10.1063/1.93738  0.371
1983 Tsu R, Gonzalez-Hernandez J, Doehler J, Ovshinsky SR. Order parameters in a-Si systems Solid State Communications. 46: 79-82. DOI: 10.1007/978-1-4684-8745-9_25  0.394
1982 Tsu R, Gonzalez-Hernandez J, Chao SS, Lee SC, Tanaka K. Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys Applied Physics Letters. 40: 534-535. DOI: 10.1063/1.93133  0.34
1981 Tanaka K, Tsu R. Effects of quantitative disorder on the electronic structures of Si and Ge Physical Review B. 24: 2038-2050. DOI: 10.1103/Physrevb.24.2038  0.39
1981 Tsu R, Chao SS, Izu M, Ovshinsky SR, Jan GJ, Pollak FH. The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems Le Journal De Physique Colloques. 42: 99-101. DOI: 10.1051/Jphyscol:1981457  0.409
1980 Tan TY, Tsu R, Lankard JR. Higher Order Defects In Silicon Laser and Electron Beam Processing of Materials. 447-453. DOI: 10.1016/B978-0-12-746850-1.50067-0  0.346
1980 Pollak FH, Tsu R, Mendez E. Electrolyte Electroreflectance Investigation Of Ion-Damaged Laser-Annealed Silicon Laser and Electron Beam Processing of Materials. 195-200. DOI: 10.1016/B978-0-12-746850-1.50030-X  0.352
1980 Tsu R, Izu M, Ovshinsky SR, Pollak FH. Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:H Solid State Communications. 36: 817-822. DOI: 10.1016/0038-1098(80)90019-8  0.384
1979 Tsu R, Hodgson RT, Baglin JE. Abstract: Laser‐induced damage in crystalline and amorphous GaAs Journal of Vacuum Science and Technology. 16: 1388-1388. DOI: 10.1116/1.570205  0.309
1979 Tsu R, Jha SS. NON-THERMAL LASER INDUCED ORDERING AND PLASMA LIFE TIME Journal De Physique. Colloque. 41. DOI: 10.1051/Jphyscol:1980404  0.355
1979 Van Vechten JA, Tsu R, Saris FW. Nonthermal pulsed laser annealing of Si; plasma annealing Physics Letters A. 74: 422-426. DOI: 10.1016/0375-9601(79)90242-1  0.335
1979 Van Vechten JA, Tsu R, Saris FW, Hoonhout D. Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting Physics Letters A. 74: 417-421. DOI: 10.1016/0375-9601(79)90241-X  0.317
1975 Tsu R, Chang LL, Sai-Halasz GA, Esaki L. Effects of quantum states on the photocurrent in a "superlattice" Physical Review Letters. 34: 1509-1512. DOI: 10.1103/Physrevlett.34.1509  0.362
1975 Tsu R, Döhler G. Hopping conduction in a "superlattice" Physical Review B. 12: 680-686. DOI: 10.1103/Physrevb.12.680  0.327
1975 Döhler GH, Tsu R, Esaki L. A new mechanism for negative differential conductivity in superlattices Solid State Communications. 17: 317-320. DOI: 10.1016/0038-1098(75)90302-6  0.351
1974 Chang LL, Esaki L, Tsu R. Resonant tunneling in semiconductor double barriers Applied Physics Letters. 24: 593-595. DOI: 10.1063/1.1655067  0.379
1974 Tsu R, Kawamura H, Esaki L. Raman scattering in the depletion region of GaAs Solid State Communications. 15: 321-324. DOI: 10.1016/0038-1098(74)90767-4  0.333
1970 Esaki L, Tsu R. Superlattice and negative differential conductivity in semiconductors Ibm Journal of Research and Development. 14: 61-65. DOI: 10.1147/Rd.141.0061  0.4
1970 Lebwohl PA, Tsu R. Electrical transport properties in a superlattice Journal of Applied Physics. 41: 2664-2667. DOI: 10.1063/1.1659279  0.325
1970 Tsu R, Howard WE, Esaki L. Photoconductivity and optical properties of amorphous GeTe Journal of Non-Crystalline Solids. 4: 322-327. DOI: 10.1016/0022-3093(70)90057-8  0.342
1968 Tsu R, Howard WE, Esaki L. Optical and electrical properties and band structure of GeTe and SnTe Physical Review. 172: 779-788. DOI: 10.1103/Physrev.172.779  0.314
1967 Tsu R, Whitmore FC. Low temperature breakdown in silicon Zener diode Physics Letters A. 24: 5-6. DOI: 10.1016/0375-9601(67)90165-X  0.39
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