| Year |
Citation |
Score |
| 2015 |
Li C, Stokes EB, Armour E. Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs Ecs Journal of Solid State Science and Technology. 4. DOI: 10.1149/2.0011502Jss |
0.369 |
|
| 2013 |
Armour EA, Byrnes D, Arif RA, Lee SM, Berkman EA, Papasouliotis GD, Li C, Stokes EB, Hefti R, Moyer P. Effect of growth pressure and gas-phase chemistry on the optical quality of InGaN/GaN multi-quantum wells Materials Research Society Symposium Proceedings. 1538: 341-351. DOI: 10.1557/Opl.2013.505 |
0.36 |
|
| 2013 |
Li Y, Byrnes DP, Stokes EB. Effect of barrier growth temperature on the material properties of InGaN/GaN multiple quantumwell structures Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.008312Jss |
0.412 |
|
| 2013 |
Li C, Stokes EB, Hefti R, Moyer P, Armour EA, Arif R, Byrnes D, Lee SM, Papasouliotisd GD. PL spatial variation in InGaN/GaN MQWs studied by confocal microscopy and TRPL spectroscopy Ecs Journal of Solid State Science and Technology. 2: R262-R266. DOI: 10.1149/2.003312Jss |
0.364 |
|
| 2007 |
Batoni P, Stokes EB, Shah TK, Hodge MD, Suleski TJ. SELF-INDUCED SURFACE TEXTURING OF Al2O3 BY MEANS OF INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING IN CL2 CHEMISTRY International Journal of High Speed Electronics and Systems. 17: 35-38. DOI: 10.1142/9789812770332_0007 |
0.688 |
|
| 2007 |
Batoni P, Patel K, Burkhart CC, Shah TK, Iyengar V, Ahrens MT, Morton ST, Bobbio SM, Stokes EB. Very low pressure magnetron reactive ion etching of GaN and Al x Ga 1-x N using dichlorofluoromethane (halocarbon 12) Journal of Electronic Materials. 36: 1166-1173. DOI: 10.1007/S11664-007-0199-0 |
0.681 |
|
| 2006 |
Suleski TJ, Chuang Y, Spivey DJ, Batoni P, Stokes EB. Nanotexturing in Ultraviolet Light-Emitting Diodes for Enhanced Light Extraction Nanophotonics. DOI: 10.1364/Nano.2006.Nwc2 |
0.695 |
|
| 2006 |
Pagan JG, Stokes EB, Patel K, Burkhart CC, Ahrens MT, Barletta PT, O’Steen M. Colloidal Quantum Dot Active Layers for Light Emitting Diodes Solid-State Electronics. 50: 1461-1465. DOI: 10.1016/J.Sse.2006.06.009 |
0.724 |
|
| 2005 |
Pagan J, Stokes E, Patel K, Burkhart C, Ahrens M. Colloidal quantum dot active layer electroluminescence in a solid GaN matrix Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee03-06 |
0.699 |
|
| 2005 |
Pagan JG, Ahrens MT, Stokes EB, Martin BA, Hasan M-. Integration of CdSe quantum dots with GaN optoelectronic materials Physica Status Solidi (C). 2: 2924-2927. DOI: 10.1002/Pssc.200461508 |
0.72 |
|
| 2002 |
Cao XA, Stokes EB, LeBoeuf SF, Sandvik PM, Kretchmer J, Walker D. Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K2.3 |
0.43 |
|
| 2002 |
Cao XA, Stokes EB, Sandvik PM, LeBoeuf SF, Kretchmer J, Walker D. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes Ieee Electron Device Letters. 23: 535-537. DOI: 10.1109/Led.2002.802601 |
0.459 |
|
| 2002 |
Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX. Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Solid-State Electronics. 46: 2291-2294. DOI: 10.1016/S0038-1101(02)00190-9 |
0.425 |
|
| 2002 |
Cao XA, Stokes EB, Sandvik P, Taskar N, Kretchmer J, Walker D. Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes Solid-State Electronics. 46: 1235-1239. DOI: 10.1016/S0038-1101(02)00023-0 |
0.419 |
|
| 1992 |
Stokes EB, Persans PD. Photoluminescence Excitation Spectroscopy of Cd SxSe(1-x) Nanoparticles Mrs Proceedings. 283. DOI: 10.1557/Proc-283-865 |
0.556 |
|
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