Edward B. Stokes - Publications

Affiliations: 
Electrical Engineering (PhD) University of North Carolina, Charlotte, Charlotte, NC, United States 
Area:
Electronics and Electrical Engineering

15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Li C, Stokes EB, Armour E. Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs Ecs Journal of Solid State Science and Technology. 4. DOI: 10.1149/2.0011502Jss  0.369
2013 Armour EA, Byrnes D, Arif RA, Lee SM, Berkman EA, Papasouliotis GD, Li C, Stokes EB, Hefti R, Moyer P. Effect of growth pressure and gas-phase chemistry on the optical quality of InGaN/GaN multi-quantum wells Materials Research Society Symposium Proceedings. 1538: 341-351. DOI: 10.1557/Opl.2013.505  0.36
2013 Li Y, Byrnes DP, Stokes EB. Effect of barrier growth temperature on the material properties of InGaN/GaN multiple quantumwell structures Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.008312Jss  0.412
2013 Li C, Stokes EB, Hefti R, Moyer P, Armour EA, Arif R, Byrnes D, Lee SM, Papasouliotisd GD. PL spatial variation in InGaN/GaN MQWs studied by confocal microscopy and TRPL spectroscopy Ecs Journal of Solid State Science and Technology. 2: R262-R266. DOI: 10.1149/2.003312Jss  0.364
2007 Batoni P, Stokes EB, Shah TK, Hodge MD, Suleski TJ. SELF-INDUCED SURFACE TEXTURING OF Al2O3 BY MEANS OF INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING IN CL2 CHEMISTRY International Journal of High Speed Electronics and Systems. 17: 35-38. DOI: 10.1142/9789812770332_0007  0.688
2007 Batoni P, Patel K, Burkhart CC, Shah TK, Iyengar V, Ahrens MT, Morton ST, Bobbio SM, Stokes EB. Very low pressure magnetron reactive ion etching of GaN and Al x Ga 1-x N using dichlorofluoromethane (halocarbon 12) Journal of Electronic Materials. 36: 1166-1173. DOI: 10.1007/S11664-007-0199-0  0.681
2006 Suleski TJ, Chuang Y, Spivey DJ, Batoni P, Stokes EB. Nanotexturing in Ultraviolet Light-Emitting Diodes for Enhanced Light Extraction Nanophotonics. DOI: 10.1364/Nano.2006.Nwc2  0.695
2006 Pagan JG, Stokes EB, Patel K, Burkhart CC, Ahrens MT, Barletta PT, O’Steen M. Colloidal Quantum Dot Active Layers for Light Emitting Diodes Solid-State Electronics. 50: 1461-1465. DOI: 10.1016/J.Sse.2006.06.009  0.724
2005 Pagan J, Stokes E, Patel K, Burkhart C, Ahrens M. Colloidal quantum dot active layer electroluminescence in a solid GaN matrix Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee03-06  0.699
2005 Pagan JG, Ahrens MT, Stokes EB, Martin BA, Hasan M-. Integration of CdSe quantum dots with GaN optoelectronic materials Physica Status Solidi (C). 2: 2924-2927. DOI: 10.1002/Pssc.200461508  0.72
2002 Cao XA, Stokes EB, LeBoeuf SF, Sandvik PM, Kretchmer J, Walker D. Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K2.3  0.43
2002 Cao XA, Stokes EB, Sandvik PM, LeBoeuf SF, Kretchmer J, Walker D. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes Ieee Electron Device Letters. 23: 535-537. DOI: 10.1109/Led.2002.802601  0.459
2002 Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX. Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Solid-State Electronics. 46: 2291-2294. DOI: 10.1016/S0038-1101(02)00190-9  0.425
2002 Cao XA, Stokes EB, Sandvik P, Taskar N, Kretchmer J, Walker D. Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes Solid-State Electronics. 46: 1235-1239. DOI: 10.1016/S0038-1101(02)00023-0  0.419
1992 Stokes EB, Persans PD. Photoluminescence Excitation Spectroscopy of Cd SxSe(1-x) Nanoparticles Mrs Proceedings. 283. DOI: 10.1557/Proc-283-865  0.556
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