| Year |
Citation |
Score |
| 2022 |
Lundstrom MS, Alam MA. Moore's law: The journey ahead. Science (New York, N.Y.). 378: 722-723. PMID 36395227 DOI: 10.1126/science.ade2191 |
0.568 |
|
| 2020 |
Jin X, Bandodkar AJ, Fratus M, Asadpour R, Rogers JA, Alam MA. Modeling, design guidelines, and detection limits of self-powered enzymatic biofuel cell-based sensors. Biosensors & Bioelectronics. 168: 112493. PMID 32889394 DOI: 10.1016/J.Bios.2020.112493 |
0.321 |
|
| 2020 |
Karda K, Mouli C, Alam MA. Design Principles of Self-Compensated NBTI-Free Negative Capacitor FinFET Ieee Transactions On Electron Devices. 67: 2238-2242. DOI: 10.1109/Ted.2020.2983634 |
0.407 |
|
| 2020 |
Ahn W, Cornigli D, Varghese D, Nguyen L, Krishnan S, Reggiani S, Alam MA. Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation Ieee Transactions On Components, Packaging and Manufacturing Technology. 1-1. DOI: 10.1109/Tcpmt.2020.3015658 |
0.607 |
|
| 2020 |
Ahn W, Zhang H, Shen T, Justison P, Alam MA. A Closed-Form Transient Joule Heating Model for an Interconnect in an Integrated Circuit Ieee Electron Device Letters. 41: 288-291. DOI: 10.1109/Led.2019.2960060 |
0.311 |
|
| 2020 |
Asadpour R, Sulas-Kern DB, Johnston S, Meydbray J, Alam MA. Dark Lock-in Thermography Identifies Solder Bond Failure as the Root Cause of Series Resistance Increase in Fielded Solar Modules Ieee Journal of Photovoltaics. 10: 1409-1416. DOI: 10.1109/Jphotov.2020.3003781 |
0.309 |
|
| 2019 |
Song E, Chiang CH, Li R, Jin X, Zhao J, Hill M, Xia Y, Li L, Huang Y, Won SM, Yu KJ, Sheng X, Fang H, Alam MA, Huang Y, et al. Flexible electronic/optoelectronic microsystems with scalable designs for chronic biointegration. Proceedings of the National Academy of Sciences of the United States of America. PMID 31308234 DOI: 10.1073/Pnas.1907697116 |
0.371 |
|
| 2019 |
Islam AE, Mahapatra S, Deora S, Maheta VD, Alam MA. Essential aspects of Negative Bias Temperature Instability (NBTI) Ecs Transactions. 35: 145-174. DOI: 10.1149/1.3572281 |
0.622 |
|
| 2019 |
Alam MA, Mahajan BK, Chen Y, Ahn W, Jiang H, Shin SH. A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review Ieee Transactions On Electron Devices. 66: 4556-4565. DOI: 10.1109/Ted.2019.2941445 |
0.365 |
|
| 2019 |
Kim S, Song JD, Alam MA, Kim H, Kim SK, Shin S, Han J, Geum D, Shim J, Lee S, Kim H, Ju G. Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs Ieee Journal of the Electron Devices Society. 7: 869-877. DOI: 10.1109/Jeds.2019.2907957 |
0.33 |
|
| 2019 |
Mahajan BK, Chen Y, Noh J, Ye PD, Alam MA. Electrothermal performance limit of β-Ga2O3 field-effect transistors Applied Physics Letters. 115: 173508. DOI: 10.1063/1.5116828 |
0.367 |
|
| 2019 |
Zagni N, Pavan P, Alam MA. Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors Applied Physics Letters. 114: 233102. DOI: 10.1063/1.5097828 |
0.313 |
|
| 2019 |
Alam MA, Si M, Ye PD. A critical review of recent progress on negative capacitance field-effect transistors Applied Physics Letters. 114: 090401. DOI: 10.1063/1.5092684 |
0.364 |
|
| 2019 |
Sun Y, Zhou Z, Asadpour R, Alam MA, Bermel P. Tailoring interdigitated back contacts for high-performance bifacial silicon solar cells Applied Physics Letters. 114: 103901. DOI: 10.1063/1.5080075 |
0.309 |
|
| 2018 |
Song E, Li R, Jin X, Du H, Huang Y, Zhang J, Xia Y, Fang H, Lee YK, Yu KJ, Chang JK, Mei Y, Alam MA, Huang Y, Rogers JA. Ultrathin Trilayer Assemblies as Long-Lived Barriers against Water and Ion Penetration in Flexible Bioelectronic Systems. Acs Nano. PMID 30281278 DOI: 10.1021/Acsnano.8B05552 |
0.338 |
|
| 2018 |
Tsai H, Asadpour R, Blancon JC, Stoumpos CC, Even J, Ajayan PM, Kanatzidis MG, Alam MA, Mohite AD, Nie W. Design principles for electronic charge transport in solution-processed vertically stacked 2D perovskite quantum wells. Nature Communications. 9: 2130. PMID 29849026 DOI: 10.1038/S41467-018-04430-2 |
0.381 |
|
| 2018 |
Karda K, Mouli C, Ramanathan S, Alam MA. A Self-Consistent, Semiclassical Electrothermal Modeling Framework for Mott Devices Ieee Transactions On Electron Devices. 65: 1672-1678. DOI: 10.1109/Ted.2018.2817604 |
0.393 |
|
| 2018 |
Shin S, Jiang H, Ahn W, Wu H, Chung W, Ye PD, Alam MA. Performance Potential of Ge CMOS Technology From a Material-Device-Circuit Perspective Ieee Transactions On Electron Devices. 65: 1679-1684. DOI: 10.1109/Ted.2018.2816576 |
0.384 |
|
| 2018 |
Ramadoss K, Zuo F, Sun Y, Zhang Z, Lin J, Bhaskar U, Shin S, Alam MA, Guha S, Weinstein D, Ramanathan S. Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices Ieee Electron Device Letters. 39: 1500-1503. DOI: 10.1109/Led.2018.2865776 |
0.321 |
|
| 2018 |
Patel MT, Khan MR, Alam MA. Thermodynamic Limit of Solar to Fuel Conversion for Generalized Photovoltaic–Electrochemical Systems Ieee Journal of Photovoltaics. 8: 1082-1089. DOI: 10.1109/Jphotov.2018.2831446 |
0.302 |
|
| 2018 |
Jordan DC, Deline C, Johnston S, Rummel SR, Sekulic B, Hacke P, Kurtz SR, Davis KO, Schneller EJ, Sun X, Alam MA, Sinton RA. Silicon Heterojunction System Field Performance Ieee Journal of Photovoltaics. 8: 177-182. DOI: 10.1109/Jphotov.2017.2765680 |
0.324 |
|
| 2018 |
Jiang C, Si M, Liang R, Xu J, Ye PD, Alam MA. A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors Ieee Journal of the Electron Devices Society. 6: 189-194. DOI: 10.1109/Jeds.2017.2787137 |
0.391 |
|
| 2018 |
Tian H, Ahn W, Maize K, Si M, Ye P, Alam MA, Shakouri A, Bermel P. Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions Journal of Applied Physics. 123: 035107. DOI: 10.1063/1.5005938 |
0.308 |
|
| 2018 |
Ahn W, Shin SH, Jiang C, Jiang H, Wahab MA, Alam MA. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits Microelectronics Reliability. 81: 262-273. DOI: 10.1016/J.Microrel.2017.12.034 |
0.337 |
|
| 2017 |
Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology. PMID 29255287 DOI: 10.1038/S41565-017-0010-1 |
0.411 |
|
| 2017 |
Chung H, Sun X, Mohite AD, Singh R, Kumar L, Alam MA, Bermel P. Modeling and designing multilayer 2D perovskite / silicon bifacial tandem photovoltaics for high efficiencies and long-term stability. Optics Express. 25: A311-A322. PMID 28437918 DOI: 10.1364/Oe.25.00A311 |
0.347 |
|
| 2017 |
Sun X, Sun Y, Zhou Z, Alam MA, Bermel P. Radiative sky cooling: fundamental physics, materials, structures, and applications Nanophotonics. 6: 997-1015. DOI: 10.1515/Nanoph-2017-0020 |
0.32 |
|
| 2017 |
Jiang C, Liang R, Xu J, Alam MA. A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit Validation Ieee Transactions On Electron Devices. 64: 1-8. DOI: 10.1109/Ted.2017.2756983 |
0.396 |
|
| 2017 |
Ahn W, Zhang H, Shen T, Christiansen C, Justison P, Shin S, Alam MA. A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability Ieee Transactions On Electron Devices. 64: 3555-3562. DOI: 10.1109/Ted.2017.2725742 |
0.321 |
|
| 2017 |
Jin X, Jiang C, Song E, Fang H, Rogers JA, Alam MA. Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems Ieee Transactions On Electron Devices. 64: 3443-3451. DOI: 10.1109/Ted.2017.2715837 |
0.348 |
|
| 2017 |
Imperiale I, Reggiani S, Pavarese G, Gnani E, Gnudi A, Baccarani G, Ahn W, Alam MA, Varghese D, Hernandez-Luna A, Nguyen L, Krishnan S. Role of the Insulating Fillers in the Encapsulation Material on the Lateral Charge Spreading in HV-ICs Ieee Transactions On Electron Devices. 64: 1209-1216. DOI: 10.1109/Ted.2016.2645080 |
0.655 |
|
| 2017 |
Jiang H, Shin S, Liu X, Zhang X, Alam MA. The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits Ieee Electron Device Letters. 38: 430-433. DOI: 10.1109/Led.2017.2674658 |
0.302 |
|
| 2017 |
Chavali RVK, Li JV, Battaglia C, De Wolf S, Gray JL, Alam MA. A Generalized Theory Explains the Anomalous Suns– $V_{{\rm{oc}}}$ Response of Si Heterojunction Solar Cells Ieee Journal of Photovoltaics. 7: 169-176. DOI: 10.1109/Jphotov.2016.2621346 |
0.408 |
|
| 2017 |
Song E, Fang H, Jin X, Zhao J, Jiang C, Yu KJ, Zhong Y, Xu D, Li J, Fang G, Du H, Zhang J, Park JM, Huang Y, Alam MA, et al. Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems Advanced Electronic Materials. 3: 1700077. DOI: 10.1002/Aelm.201700077 |
0.356 |
|
| 2017 |
Song E, Lee YK, Li R, Li J, Jin X, Yu KJ, Xie Z, Fang H, Zhong Y, Du H, Zhang J, Fang G, Kim Y, Yoon Y, Alam MA, et al. Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants Advanced Functional Materials. 28: 1702284. DOI: 10.1002/Adfm.201702284 |
0.373 |
|
| 2016 |
Fang H, Zhao J, Yu KJ, Song E, Farimani AB, Chiang CH, Jin X, Xue Y, Xu D, Du W, Seo KJ, Zhong Y, Yang Z, Won SM, Fang G, ... ... Alam MA, et al. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems. Proceedings of the National Academy of Sciences of the United States of America. 113: 11682-11687. PMID 27791052 DOI: 10.1073/Pnas.1605269113 |
0.36 |
|
| 2016 |
Tsai H, Nie W, Blancon JC, Stoumpos CC, Asadpour R, Harutyunyan B, Neukirch AJ, Verduzco R, Crochet JJ, Tretiak S, Pedesseau L, Even J, Alam MA, Gupta G, Lou J, et al. High-efficiency two-dimensional Ruddlesden-Popper perovskite solar cells. Nature. PMID 27383783 DOI: 10.1038/Nature18306 |
0.385 |
|
| 2016 |
Nie W, Blancon JC, Neukirch AJ, Appavoo K, Tsai H, Chhowalla M, Alam MA, Sfeir MY, Katan C, Even J, Tretiak S, Crochet JJ, Gupta G, Mohite AD. Light-activated photocurrent degradation and self-healing in perovskite solar cells. Nature Communications. 7: 11574. PMID 27181192 DOI: 10.1038/Ncomms11574 |
0.364 |
|
| 2016 |
Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song WG, Omkaram I, Alam MA, Kim S. Transistors: High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates (Adv. Mater. 12/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 2278. PMID 27001696 DOI: 10.1002/Adma.201670078 |
0.32 |
|
| 2016 |
Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song W, Omkaram I, Alam MA, Kim S. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates. Advanced Materials (Deerfield Beach, Fla.). PMID 26755196 DOI: 10.1002/Adma.201504789 |
0.317 |
|
| 2016 |
Das SR, Sadeque S, Jeong C, Chen R, Alam MA, Janes DB. Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks Nanophotonics. 5: 180-195. DOI: 10.1515/Nanoph-2016-0036 |
0.587 |
|
| 2016 |
Karda K, Mouli C, Alam MA. Switching Dynamics and Hot Atom Damage in Landau Switches Ieee Electron Device Letters. 37: 801-804. DOI: 10.1109/Led.2016.2562007 |
0.316 |
|
| 2016 |
Sun X, Silverman T, Garris R, Deline C, Alam MA. An Illumination- and Temperature-Dependent Analytical Model for Copper Indium Gallium Diselenide (CIGS) Solar Cells Ieee Journal of Photovoltaics. 6: 1298-1307. DOI: 10.1109/Jphotov.2016.2583790 |
0.351 |
|
| 2016 |
Chavali RVK, Johlin EC, Gray JL, Buonassisi T, Alam MA. A Framework for Process-to-Module Modeling of a-Si/c-Si (HIT) Heterojunction Solar Cells to Investigate the Cell-to-Module Efficiency Gap Ieee Journal of Photovoltaics. 6: 875-887. DOI: 10.1109/Jphotov.2016.2557060 |
0.384 |
|
| 2016 |
Alam MA, Khan MR. Thermodynamic efficiency limits of classical and bifacial multi-junction tandem solar cells: An analytical approach Applied Physics Letters. 109: 173504. DOI: 10.1063/1.4966137 |
0.327 |
|
| 2016 |
Islam AE, Goel N, Mahapatra S, Alam MA. Reaction-Diffusion model Springer Series in Advanced Microelectronics. 139: 181-207. DOI: 10.1007/978-81-322-2508-9_5 |
0.6 |
|
| 2015 |
Islam AE, Rogers JA, Alam MA. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications. Advanced Materials (Deerfield Beach, Fla.). PMID 26540144 DOI: 10.1002/Adma.201502918 |
0.684 |
|
| 2015 |
Ray B, Baradwaj AG, Khan MR, Boudouris BW, Alam MA. Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells. Proceedings of the National Academy of Sciences of the United States of America. PMID 26290582 DOI: 10.1073/Pnas.1506699112 |
0.721 |
|
| 2015 |
Swaminathan VV, Dak P, Reddy B, Salm E, Duarte-Guevara C, Zhong Y, Fischer A, Liu YS, Alam MA, Bashir R. Electronic desalting for controlling the ionic environment in droplet-based biosensing platforms. Applied Physics Letters. 106: 053105. PMID 25713471 DOI: 10.1063/1.4907351 |
0.305 |
|
| 2015 |
Nie W, Tsai H, Asadpour R, Blancon JC, Neukirch AJ, Gupta G, Crochet JJ, Chhowalla M, Tretiak S, Alam MA, Wang HL, Mohite AD. Solar cells. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains. Science (New York, N.Y.). 347: 522-5. PMID 25635093 DOI: 10.1126/Science.Aaa0472 |
0.382 |
|
| 2015 |
Wahab MA, Shin S, Alam MA. 3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature Ieee Transactions On Electron Devices. 62: 3595-3604. DOI: 10.1109/Ted.2015.2478844 |
0.322 |
|
| 2015 |
Butt NZ, Sarker BK, Chen YP, Alam MA. Substrate-Induced Photofield Effect in Graphene Phototransistors Ieee Transactions On Electron Devices. 62: 3734-3741. DOI: 10.1109/Ted.2015.2475643 |
0.727 |
|
| 2015 |
Shin S, Wahab MA, Masuduzzaman M, Maize K, Gu J, Si M, Shakouri A, Ye PD, Alam MA. Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2444879 |
0.362 |
|
| 2015 |
Palit S, Varghese D, Guo H, Krishnan S, Alam MA. The Role of Dielectric Heating and Effects of Ambient Humidity in the Electrical Breakdown of Polymer Dielectrics Ieee Transactions On Device and Materials Reliability. 15: 308-318. DOI: 10.1109/Tdmr.2015.2431998 |
0.649 |
|
| 2015 |
Khan MR, Wang X, Alam MA. Nonideal Effects Limit the Efficiency Gain for Angle-Restricted Solar Cells Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2015.2480227 |
0.306 |
|
| 2015 |
Sun X, Asadpour R, Nie W, Mohite AD, Alam MA. A Physics-Based Analytical Model for Perovskite Solar Cells Ieee Journal of Photovoltaics. 5: 1389-1394. DOI: 10.1109/Jphotov.2015.2451000 |
0.346 |
|
| 2015 |
Chavali RVK, Moore JE, Wang X, Alam MA, Lundstrom MS, Gray JL. The Frozen Potential Approach to Separate the Photocurrent and Diode Injection Current in Solar Cells Ieee Journal of Photovoltaics. 5: 865-873. DOI: 10.1109/Jphotov.2015.2405757 |
0.664 |
|
| 2015 |
Chavali RVK, Khatavkar S, Kannan CV, Kumar V, Nair PR, Gray JL, Alam MA. Multiprobe Characterization of Inversion Charge for Self-Consistent Parameterization of HIT Cells Ieee Journal of Photovoltaics. 5: 725-735. DOI: 10.1109/Jphotov.2014.2388072 |
0.349 |
|
| 2015 |
Alam MA, Elibol OH, Haque A. IEEE access special section editorial: Nanobiosensors Ieee Access. 3: 1477-1479. DOI: 10.1109/Access.2015.2450551 |
0.749 |
|
| 2015 |
Asadpour R, Chavali RVK, Ryyan Khan M, Alam MA. Bifacial Si heterojunction-perovskite organic-inorganic tandem to produce highly efficient (ηT∗ ∼33%) solar cell Applied Physics Letters. 106. DOI: 10.1063/1.4922375 |
0.339 |
|
| 2015 |
Karda K, Jain A, Mouli C, Alam MA. An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed Applied Physics Letters. 106. DOI: 10.1063/1.4918649 |
0.364 |
|
| 2015 |
Maize K, Das SR, Sadeque S, Mohammed AMS, Shakouri A, Janes DB, Alam MA. Super-Joule heating in graphene and silver nanowire network Applied Physics Letters. 106. DOI: 10.1063/1.4916943 |
0.308 |
|
| 2015 |
Xie X, Wahab MA, Li Y, Islam AE, Tomic B, Huang J, Burns B, Seabron E, Dunham SN, Du F, Lin J, Wilson WL, Song J, Huang Y, Alam MA, et al. Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes Journal of Applied Physics. 117: 134303. DOI: 10.1063/1.4916537 |
0.672 |
|
| 2015 |
Dongaonkar S, Alam MA. Geometrical design of thin film photovoltaic modules for improved shade tolerance and performance Progress in Photovoltaics: Research and Applications. 23: 170-181. DOI: 10.1002/Pip.2410 |
0.312 |
|
| 2014 |
Lee J, Dak P, Lee Y, Park H, Choi W, Alam MA, Kim S. Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomolecules. Scientific Reports. 4: 7352. PMID 25516382 DOI: 10.1038/Srep07352 |
0.318 |
|
| 2014 |
Xie X, Jin SH, Wahab MA, Islam AE, Zhang C, Du F, Seabron E, Lu T, Dunham SN, Cheong HI, Tu YC, Guo Z, Chung HU, Li Y, Liu Y, ... ... Alam MA, et al. Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes. Nature Communications. 5: 5332. PMID 25387684 DOI: 10.1038/Ncomms6332 |
0.673 |
|
| 2014 |
Masuduzzaman M, Alam MA. Effective nanometer airgap of NEMS devices using negative capacitance of ferroelectric materials. Nano Letters. 14: 3160-5. PMID 24797732 DOI: 10.1021/Nl5004416 |
0.355 |
|
| 2014 |
Wahab MA, Alam MA. Implications of electrical crosstalk for high density aligned array of single-wall carbon nanotubes Ieee Transactions On Electron Devices. 61: 4273-4281. DOI: 10.1109/Ted.2014.2360869 |
0.405 |
|
| 2014 |
Masuduzzaman M, Varghese D, Rodriguez JA, Krishnan S, Alam MA. Observation and control of hot atom damage in ferroelectric devices Ieee Transactions On Electron Devices. 61: 3490-3498. DOI: 10.1109/Ted.2014.2347046 |
0.638 |
|
| 2014 |
Jain A, Alam MA. Stability constraints define the minimum subthreshold swing of a negative capacitance field-effect transistor Ieee Transactions On Electron Devices. 61: 2235-2242. DOI: 10.1109/Ted.2014.2316167 |
0.395 |
|
| 2014 |
Palit S, Xu X, Raman A, Alam MA. Implications of rough dielectric surfaces on charging-adjusted actuation of RF-MEMS Ieee Electron Device Letters. 35: 948-950. DOI: 10.1109/Led.2014.2336658 |
0.311 |
|
| 2014 |
Moore JE, Dongaonkar S, Chavali RVK, Alam MA, Lundstrom MS. Correlation of built-in potential and I-V crossover in thin-film solar cells Ieee Journal of Photovoltaics. 4: 1138-1148. DOI: 10.1109/Jphotov.2014.2316364 |
0.695 |
|
| 2014 |
Beck JH, Ray B, Grote RR, Osgood RM, Black CT, Alam MA, Kymissis I. Nanostructured electrodes improve the fill factor of organic photovoltaics Ieee Journal of Photovoltaics. 4: 1100-1106. DOI: 10.1109/Jphotov.2014.2315436 |
0.707 |
|
| 2014 |
Mungan ES, Wang Y, Dongaonkar S, Ely DR, García RE, Alam MA. From process to modules: End-to-end modeling of CSS-deposited CdTe solar cells Ieee Journal of Photovoltaics. 4: 954-961. DOI: 10.1109/Jphotov.2014.2308719 |
0.307 |
|
| 2014 |
Chavali RVK, Wilcox JR, Ray B, Gray JL, Alam MA. Correlated nonideal effects of dark and light I-V characteristics in a-Si/c-Si heterojunction solar cells Ieee Journal of Photovoltaics. 4: 763-771. DOI: 10.1109/Jphotov.2014.2307171 |
0.678 |
|
| 2014 |
Dongaonkar S, Alam MA. In-line post-process scribing for reducing cell to module efficiency gap in monolithic thin-film photovoltaics Ieee Journal of Photovoltaics. 4: 324-332. DOI: 10.1109/Jphotov.2013.2282747 |
0.308 |
|
| 2014 |
Ray B, Baradwaj AG, Boudouris BW, Alam MA. Defect characterization in organic semiconductors by forward bias capacitance-voltage (FB-CV) analysis Journal of Physical Chemistry C. 118: 17461-17466. DOI: 10.1021/Jp505500R |
0.691 |
|
| 2014 |
Khan MR, Ray B, Alam MA. Prospects of layer-split tandem cells for high-efficiency OPV Solar Energy Materials and Solar Cells. 120: 716-723. DOI: 10.1016/J.Solmat.2013.08.008 |
0.676 |
|
| 2014 |
Varghese D, Reddy V, Krishnan S, Alam MA. OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review Microelectronics Reliability. 54: 1477-1488. DOI: 10.1016/J.Microrel.2014.03.013 |
0.681 |
|
| 2013 |
Jin SH, Dunham SN, Song J, Xie X, Kim JH, Lu C, Islam A, Du F, Kim J, Felts J, Li Y, Xiong F, Wahab MA, Menon M, Cho E, ... ... Alam MA, et al. Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes. Nature Nanotechnology. 8: 347-55. PMID 23624697 DOI: 10.1038/Nnano.2013.56 |
0.701 |
|
| 2013 |
Wahab MA, Jin SH, Islam AE, Kim J, Kim JH, Yeo WH, Lee DJ, Chung HU, Rogers JA, Alam MA. Electrostatic dimension of aligned-array carbon nanotube field-effect transistors. Acs Nano. 7: 1299-308. PMID 23320505 DOI: 10.1021/Nn304794W |
0.699 |
|
| 2013 |
Alam MA, Ray B, Khan MR, Dongaonkar S. The essence and efficiency limits of bulk-heterostructure organic solar cells: A polymer-to-panel perspective Journal of Materials Research. 28: 541-557. DOI: 10.1557/Jmr.2012.425 |
0.648 |
|
| 2013 |
Alam MA, Ryyan Khan M. Fundamentals of PV efficiency interpreted by a two-level model American Journal of Physics. 81: 655-662. DOI: 10.1119/1.4812594 |
0.315 |
|
| 2013 |
Jain A, Alam MA. Universal resonant and pull-in characteristics of tunable-Gap electromechanical actuators Ieee Transactions On Electron Devices. 60: 4240-4247. DOI: 10.1109/Ted.2013.2284783 |
0.311 |
|
| 2013 |
Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam AE, Alam MA. A comparative study of different physics-based NBTI models Ieee Transactions On Electron Devices. 60: 901-916. DOI: 10.1109/Ted.2013.2238237 |
0.699 |
|
| 2013 |
Ray B, Alam MA. Role of charged defects on organic solar cell performance: Prospect of heterojunction-free device design Conference Record of the Ieee Photovoltaic Specialists Conference. 3082-3085. DOI: 10.1109/PVSC.2013.6745112 |
0.693 |
|
| 2013 |
Chavali RVK, Wilcox JR, Ray B, Gray JL, Alam MA. A diagnostic tool for analyzing the current-voltage characteristics in a-Si/c-Si heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 652-657. DOI: 10.1109/PVSC.2013.6744235 |
0.677 |
|
| 2013 |
Dongaonkar S, Deline C, Alam MA. Performance and Reliability Implications of Two-Dimensional Shading in Monolithic Thin-Film Photovoltaic Modules Ieee Journal of Photovoltaics. 3: 1367-1375. DOI: 10.1109/Jphotov.2013.2270349 |
0.351 |
|
| 2013 |
Wang X, Khan MR, Gray JL, Alam MA, Lundstrom MS. Design of gaas solar cells operating close to the shockley-queisser limit Ieee Journal of Photovoltaics. 3: 737-744. DOI: 10.1109/Jphotov.2013.2241594 |
0.67 |
|
| 2013 |
Ray B, Khan MR, Black C, Alam MA. Nanostructured Electrodes for Organic Solar Cells: Analysis and Design Fundamentals Ieee Journal of Photovoltaics. 3: 318-329. DOI: 10.1109/Jphotov.2012.2220529 |
0.686 |
|
| 2013 |
Ray B, Alam MA. Achieving fill factor above 80% in organic solar cells by charged interface Ieee Journal of Photovoltaics. 3: 310-317. DOI: 10.1109/JPHOTOV.2012.2216508 |
0.672 |
|
| 2013 |
Ray B, Alam MA. Is a heterojunction essential for high-efficiency organic solar cells? Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2013.6633889 |
0.623 |
|
| 2013 |
Dak P, Nair P, Go J, Alam MA. Extended-gate biosensors achieve fluid stability with no loss in charge sensitivity Device Research Conference - Conference Digest, Drc. 105-106. DOI: 10.1109/DRC.2013.6633815 |
0.546 |
|
| 2013 |
Vedula RP, Palit S, Alam MA, Strachan A. Role of atomic variability in dielectric charging: A first-principles-based multiscale modeling study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.205204 |
0.765 |
|
| 2013 |
Go J, Alam MA. The future scalability of pH-based genome sequencers: A theoretical perspective Journal of Applied Physics. 114. DOI: 10.1063/1.4825119 |
0.564 |
|
| 2013 |
Dongaonkar S, Loser S, Sheets EJ, Zaunbrecher K, Agrawal R, Marks TJ, Alam MA. Universal statistics of parasitic shunt formation in solar cells, and its implications for cell to module efficiency gap Energy and Environmental Science. 6: 782-787. DOI: 10.1039/C3Ee24167J |
0.336 |
|
| 2013 |
Chen R, Das SR, Jeong C, Khan MR, Janes DB, Alam MA. Co-percolating graphene-wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes Advanced Functional Materials. 23: 5150-5158. DOI: 10.1002/Adfm.201300124 |
0.583 |
|
| 2012 |
Mohammad A, Das SR, Khan MR, Alam MA, Janes DB. Wavelength-dependent absorption in structurally tailored randomly branched vertical arrays of InSb nanowires. Nano Letters. 12: 6112-8. PMID 23131195 DOI: 10.1021/Nl302803E |
0.313 |
|
| 2012 |
Go J, Nair PR, Alam MA. Theory of signal and noise in double-gated nanoscale electronic pH sensors. Journal of Applied Physics. 112: 34516. PMID 22991484 DOI: 10.1063/1.4737604 |
0.581 |
|
| 2012 |
Xie X, Islam AE, Wahab MA, Ye L, Ho X, Alam MA, Rogers JA. Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts. Acs Nano. 6: 7981-8. PMID 22866943 DOI: 10.1021/Nn3025496 |
0.705 |
|
| 2012 |
Dorvel BR, Reddy B, Go J, Duarte Guevara C, Salm E, Alam MA, Bashir R. Silicon nanowires with high-k hafnium oxide dielectrics for sensitive detection of small nucleic acid oligomers. Acs Nano. 6: 6150-64. PMID 22695179 DOI: 10.1021/Nn301495K |
0.591 |
|
| 2012 |
Go J, Nair PR, Reddy B, Dorvel B, Bashir R, Alam MA. Coupled heterogeneous nanowire-nanoplate planar transistor sensors for giant (>10 V/pH) Nernst response. Acs Nano. 6: 5972-9. PMID 22695084 DOI: 10.1021/Nn300874W |
0.579 |
|
| 2012 |
Jain A, Nair PR, Alam MA. Flexure-FET biosensor to break the fundamental sensitivity limits of nanobiosensors using nonlinear electromechanical coupling. Proceedings of the National Academy of Sciences of the United States of America. 109: 9304-8. PMID 22623527 DOI: 10.1073/Pnas.1203749109 |
0.322 |
|
| 2012 |
Li J, Ray B, Alam MA, Östling M. Threshold of hierarchical percolating systems. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 85: 021109. PMID 22463155 DOI: 10.1103/Physreve.85.021109 |
0.653 |
|
| 2012 |
Alam M, Ray B, Khan M, Dongaonkar S. The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells Mrs Proceedings. 1390. DOI: 10.1557/Opl.2012.750 |
0.696 |
|
| 2012 |
Jain A, Palit S, Alam MA. A physics-based predictive modeling framework for dielectric charging and creep in RF MEMS capacitive switches and varactors Journal of Microelectromechanical Systems. 21: 420-430. DOI: 10.1109/Jmems.2011.2174418 |
0.369 |
|
| 2012 |
Allen JE, Ray B, Khan MR, Yager KG, Alam MA, Black CT. Self-assembly of single dielectric nanoparticle layers and integration in polymer-based solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4744928 |
0.682 |
|
| 2012 |
Masuduzzaman M, Weir B, Alam MA. Probing bulk defect energy bands using generalized charge pumping method Journal of Applied Physics. 111: 074501. DOI: 10.1063/1.3694802 |
0.312 |
|
| 2012 |
Palit S, Alam MA. Theory of charging and charge transport in "intermediate" thickness dielectrics and its implications for characterization and reliability Journal of Applied Physics. 111. DOI: 10.1063/1.3691962 |
0.381 |
|
| 2012 |
Ray B, Lundstrom MS, Alam MA. Can morphology tailoring improve the open circuit voltage of organic solar cells? Applied Physics Letters. 100. DOI: 10.1063/1.3672221 |
0.792 |
|
| 2012 |
Ray B, Alam MA. Random vs regularized OPV: Limits of performance gain of organic bulk heterojunction solar cells by morphology engineering Solar Energy Materials and Solar Cells. 99: 204-212. DOI: 10.1016/J.Solmat.2011.11.042 |
0.677 |
|
| 2012 |
Jin SH, Islam AE, Kim T, Kim J, Alam MA, Rogers JA. Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures Advanced Functional Materials. 22: 2276-2284. DOI: 10.1002/Adfm.201102814 |
0.715 |
|
| 2011 |
Jeong C, Nair P, Khan M, Lundstrom M, Alam MA. Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes. Nano Letters. 11: 5020-5. PMID 21985666 DOI: 10.1021/Nl203041N |
0.727 |
|
| 2011 |
Reddy B, Elibol OH, Nair PR, Dorvel BR, Butler F, Ahsan Z, Bergstrom DE, Alam MA, Bashir R. Silicon field effect transistors as dual-use sensor-heater hybrids. Analytical Chemistry. 83: 888-95. PMID 21214189 DOI: 10.1021/Ac102566F |
0.784 |
|
| 2011 |
Reddy B, Dorvel BR, Go J, Nair PR, Elibol OH, Credo GM, Daniels JS, Chow EK, Su X, Varma M, Alam MA, Bashir R. High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing. Biomedical Microdevices. 13: 335-44. PMID 21203849 DOI: 10.1007/S10544-010-9497-Z |
0.807 |
|
| 2011 |
Salamat S, Ho X, Rogers JA, Alam MA. Intrinsic performance variability in aligned array CNFETs Ieee Transactions On Nanotechnology. 10: 439-444. DOI: 10.1109/Tnano.2010.2046674 |
0.724 |
|
| 2011 |
Ray B, Alam MA. Optimum morphology and performance gains of organic solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 003477-003481. DOI: 10.1109/PVSC.2011.6186696 |
0.647 |
|
| 2011 |
Dongaonkar S, Karthik Y, Mahapatra S, Alam MA. Physics and Statistics of Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon p–i–n Solar Cells Ieee Journal of Photovoltaics. 1: 111-117. DOI: 10.1109/Jphotov.2011.2174030 |
0.365 |
|
| 2011 |
Masuduzzaman M, Varghese D, Guo H, Krishnan S, Alam MA. The origin and consequences of push-pull breakdown in series connected dielectrics Applied Physics Letters. 99. DOI: 10.1063/1.3672216 |
0.629 |
|
| 2011 |
Ray B, Alam MA. A compact physical model for morphology induced intrinsic degradation of organic bulk heterojunction solar cell Applied Physics Letters. 99. DOI: 10.1063/1.3610460 |
0.696 |
|
| 2011 |
Jain A, Nair PR, Alam MA. Strategies for dynamic soft-landing in capacitive microelectromechanical switches Applied Physics Letters. 98: 234104. DOI: 10.1063/1.3598960 |
0.313 |
|
| 2011 |
Abdolkader TM, Alam MA. Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors Applied Physics Letters. 98. DOI: 10.1063/1.3549769 |
0.314 |
|
| 2011 |
Kumar S, Pimparkar N, Murthy JY, Alam MA. Self-consistent electrothermal analysis of nanotube network transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3524209 |
0.811 |
|
| 2011 |
Satter MM, Islam AE, Varghese D, Alam MA, Haque A. A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Solid-State Electronics. 56: 141-147. DOI: 10.1016/J.Sse.2010.10.017 |
0.785 |
|
| 2011 |
Ray B, Nair PR, Alam MA. Annealing dependent performance of organic bulk-heterojunction solar cells: A theoretical perspective Solar Energy Materials and Solar Cells. 95: 3287-3294. DOI: 10.1016/J.Solmat.2011.07.006 |
0.718 |
|
| 2011 |
Islam AE, Alam MA. Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory Journal of Computational Electronics. 10: 341-351. DOI: 10.1007/S10825-011-0369-4 |
0.685 |
|
| 2010 |
Ho X, Ye L, Rotkin SV, Cao Q, Unarunotai S, Salamat S, Alam MA, Rogers JA. Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes. Nano Letters. 10: 499-503. PMID 20050675 DOI: 10.1021/Nl903281V |
0.722 |
|
| 2010 |
Jain A, Islam AE, Alam MA. A theoretical study of negative bias temperature instability in p-type NEMFET Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508940 |
0.687 |
|
| 2010 |
Reddy B, Dorvel BR, Elibol OH, Nair PR, Alam MA, Bergstrom DE, Bashir R. Temperature measurement in fluid directly at the surface with high spatial resolution using a covalently attached fluorescent dye Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508917 |
0.732 |
|
| 2010 |
Varghese D, Moens P, Alam MA. On-state hot carrier degradation in drain-extended NMOS transistors Ieee Transactions On Electron Devices. 57: 2704-2710. DOI: 10.1109/Ted.2010.2059632 |
0.663 |
|
| 2010 |
Giusi G, Alam MA, Crupi F, Pierro S. Bipolar Mode Operation and Scalability of Double-Gate Capacitorless 1T-DRAM Cells Ieee Transactions On Electron Devices. 57: 1743-1750. DOI: 10.1109/Ted.2010.2050104 |
0.301 |
|
| 2010 |
Ray B, Nair PR, Alam MA. Morphology dependent short circuit current in bulk heterojunction solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 85-89. DOI: 10.1109/PVSC.2010.5614468 |
0.682 |
|
| 2010 |
Dongaonkar S, Y K, Wang D, Frei M, Mahapatra S, Alam MA. On the nature of shunt leakage in amorphous silicon p-i-n solar cells Ieee Electron Device Letters. 31: 1266-1268. DOI: 10.1109/Led.2010.2064754 |
0.377 |
|
| 2010 |
Islam AE, Alam MA. Mobility enhancement due to charge trapping & defect generation: Physics of self-compensated BTI Ieee International Reliability Physics Symposium Proceedings. 65-72. DOI: 10.1109/IRPS.2010.5488853 |
0.684 |
|
| 2010 |
Go J, Nair PR, Reddy B, Dorvel B, Bashir R, Alam MA. Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2010.5703325 |
0.579 |
|
| 2010 |
Dongaonkar S, Servaites JD, Ford GM, Loser S, Moore J, Gelfand RM, Mohseni H, Hillhouse HW, Agrawal R, Ratner MA, Marks TJ, Lundstrom MS, Alam MA. Universality of non-Ohmic shunt leakage in thin-film solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3518509 |
0.687 |
|
| 2009 |
Lee K, Nair PR, Scott A, Alam MA, Janes DB. Device considerations for development of conductance-based biosensors. Journal of Applied Physics. 105: 102046. PMID 24753627 DOI: 10.1063/1.3116630 |
0.381 |
|
| 2009 |
Elibol OH, Reddy B, Nair PR, Dorvel B, Butler F, Ahsan ZS, Bergstrom DE, Alam MA, Bashir R. Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid. Lab On a Chip. 9: 2789-95. PMID 19967115 DOI: 10.1039/B906048K |
0.786 |
|
| 2009 |
Go J, Alam MA. Statistical interpretation of "femtomolar" detection. Applied Physics Letters. 95: 33110. PMID 19690630 DOI: 10.1063/1.3176017 |
0.595 |
|
| 2009 |
Mahapatra S, Maheta VD, Islam AE, Alam MA. Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs Ieee Transactions On Electron Devices. 56: 236-242. DOI: 10.1109/Ted.2008.2010569 |
0.679 |
|
| 2009 |
Deora S, Maheta VD, Islam AE, Alam MA, Mahapatra S. A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs Ieee Electron Device Letters. 30: 978-980. DOI: 10.1109/Led.2009.2026436 |
0.683 |
|
| 2009 |
Varghese D, Alam MA. Charge pumping as a monitor of OFF-state TDDB in asymmetrically stressed transistors Ieee Electron Device Letters. 30: 972-974. DOI: 10.1109/Led.2009.2026294 |
0.666 |
|
| 2009 |
Islam AE, Alam MA. Self-compensating the effect of defect generation in advanced CMOS substrates Ieee International Integrated Reliability Workshop Final Report. 97-101. DOI: 10.1109/IRWS.2009.5383024 |
0.697 |
|
| 2009 |
Reddy B, Elibol OH, Dorvel BR, Nair PR, Alam MA, Bashir R. SOI Nanofet Devices For Ultra-Sensitive Detection of Biomolecules Biophysical Journal. 96: 50a-51a. DOI: 10.1016/J.Bpj.2008.12.157 |
0.795 |
|
| 2009 |
Pimparkar N, Cao Q, Rogers JA, Alam MA. Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors Nano Research. 2: 167-175. DOI: 10.1007/S12274-009-9013-Z |
0.799 |
|
| 2008 |
Lee K, Nair PR, Alam MA, Janes DB, Wampler HP, Zemlyanov DY, Ivanisevic A. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors. Journal of Applied Physics. 103: 114510-1145107. PMID 19484151 DOI: 10.1063/1.2936853 |
0.322 |
|
| 2008 |
Cao Q, Kim HS, Pimparkar N, Kulkarni JP, Wang C, Shim M, Roy K, Alam MA, Rogers JA. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature. 454: 495-500. PMID 18650920 DOI: 10.1038/nature07110 |
0.809 |
|
| 2008 |
Kumar S, Murthy JY, Alam MA. Electrical and thermal transport in thin-film nanotube composites with applications to macroelectronics International Journal of Nanomanufacturing. 2: 226. DOI: 10.1504/Ijnm.2008.018947 |
0.326 |
|
| 2008 |
Islam AE, Gupta G, Ahmed KZ, Mahapatra S, Alam MA. Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models Ieee Transactions On Electron Devices. 55: 1143-1152. DOI: 10.1109/Ted.2008.919545 |
0.699 |
|
| 2008 |
Masuduzzaman M, Islam AE, Alam MA. Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric Ieee Transactions On Electron Devices. 55: 3421-3431. DOI: 10.1109/Ted.2008.2006773 |
0.693 |
|
| 2008 |
Alam MA, Varghese D, Kaczer B. Theory of breakdown position determination by voltage- and current-ratio methods Ieee Transactions On Electron Devices. 55: 3150-3158. DOI: 10.1109/Ted.2008.2004483 |
0.642 |
|
| 2008 |
Mahapatra S, Alam MA. Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective Ieee Transactions On Device and Materials Reliability. 8: 35-45. DOI: 10.1109/Tdmr.2007.912261 |
0.325 |
|
| 2008 |
Pimparkar N, Alam MA. A "Bottom-up" redefinition for mobility and the effect of poor tube-tube contact on the performance of CNT nanonet thin-film transistors Ieee Electron Device Letters. 29: 1037-1039. DOI: 10.1109/Led.2008.2001259 |
0.805 |
|
| 2008 |
Islam AE, Alam MA. On the possibility of degradation-free field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2919798 |
0.711 |
|
| 2007 |
Kang SJ, Kocabas C, Ozel T, Shim M, Pimparkar N, Alam MA, Rotkin SV, Rogers JA. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nature Nanotechnology. 2: 230-6. PMID 18654268 DOI: 10.1038/Nnano.2007.77 |
0.808 |
|
| 2007 |
Kocabas C, Pimparkar N, Yesilyurt O, Kang SJ, Alam MA, Rogers JA. Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors. Nano Letters. 7: 1195-202. PMID 17394371 DOI: 10.1021/Nl062907M |
0.798 |
|
| 2007 |
Kumar S, Alam MA, Murthy JY. Computational model for transport in nanotube-based composites with applications to flexible electronics Journal of Heat Transfer. 129: 500-508. DOI: 10.1115/1.2709969 |
0.338 |
|
| 2007 |
Butt NZ, Yoder PD, Alam MA. Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell Ieee Transactions On Nuclear Science. 54: 2363-2370. DOI: 10.1109/Tns.2007.910204 |
0.741 |
|
| 2007 |
Ju S, Li J, Pimparkar N, Alam MA, Chang RPH, Janes DB. N-type field-effect transistors using multiple Mg-doped ZnO nanorods Ieee Transactions On Nanotechnology. 6: 390-394. DOI: 10.1109/Tnano.2007.893148 |
0.802 |
|
| 2007 |
Nair PR, Alam MA. Design considerations of silicon nanowire biosensors Ieee Transactions On Electron Devices. 54: 3400-3408. DOI: 10.1109/Ted.2007.909059 |
0.349 |
|
| 2007 |
Varghese D, Kufluoglu H, Reddy V, Shichijo H, Mosher D, Krishnan S, Alam MA. OFF-state degradation in drain-extended NMOS transistors: Interface damage and correlation to dielectric breakdown Ieee Transactions On Electron Devices. 54: 2669-2678. DOI: 10.1109/Ted.2007.904587 |
0.783 |
|
| 2007 |
Islam AE, Kufluoglu H, Varghese D, Mahapatra S, Alam MA. Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation Ieee Transactions On Electron Devices. 54: 2143-2154. DOI: 10.1109/Ted.2007.902883 |
0.796 |
|
| 2007 |
Butt NZ, Alam MA. Scaling limits of double-gate and surround-gate Z-RAM cells Ieee Transactions On Electron Devices. 54: 2255-2262. DOI: 10.1109/Ted.2007.902691 |
0.747 |
|
| 2007 |
Küflüog̃lu H, Alam MA. A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation Ieee Transactions On Electron Devices. 54: 1101-1107. DOI: 10.1109/Ted.2007.893809 |
0.779 |
|
| 2007 |
Pimparkar N, Guo J, Alam MA. Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical Model Ieee Transactions On Electron Devices. 54: 637-644. DOI: 10.1109/Ted.2007.891871 |
0.807 |
|
| 2007 |
Paul BC, Kang K, Kufluoglu H, Alam MA, Roy K. Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 26: 743-751. DOI: 10.1109/Tcad.2006.884870 |
0.792 |
|
| 2007 |
Pimparkar N, Kocabas C, Kang SJ, Rogers J, Alam MA. Limits of performance gain of aligned CNT over randomized network: Theoretical predictions and experimental validation Ieee Electron Device Letters. 28: 593-595. DOI: 10.1109/Led.2007.898256 |
0.814 |
|
| 2007 |
Pimparkar N, Cao Q, Kumar S, Murthy JY, Rogers J, Alam MA. Current–Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A “Bottom-Up” Perspective Ieee Electron Device Letters. 28: 157-160. DOI: 10.1109/Led.2006.889219 |
0.796 |
|
| 2007 |
Kumar S, Alam MA, Murthy JY. Effect of percolation on thermal transport in nanotube composites Applied Physics Letters. 90. DOI: 10.1063/1.2712428 |
0.303 |
|
| 2007 |
Islam AE, Kufluoglu H, Varghese D, Alam MA. Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements Applied Physics Letters. 90. DOI: 10.1063/1.2695998 |
0.769 |
|
| 2007 |
Guo J, Alam MA, Ouyang Y. Subband gap impact ionization and excitation in carbon nanotube transistors Journal of Applied Physics. 101: 064311. DOI: 10.1063/1.2435821 |
0.336 |
|
| 2007 |
Alam MA, Kufluoglu H, Varghese D, Mahapatra S. A comprehensive model for PMOS NBTI degradation: Recent progress Microelectronics Reliability. 47: 853-862. DOI: 10.1016/J.Microrel.2006.10.012 |
0.775 |
|
| 2006 |
Alam M, Pimparkar N, Kumar S, Murthy J. Theory of Nanocomposite Network Transistors for Macroelectronics Applications Mrs Bulletin. 31: 466-470. DOI: 10.1557/Mrs2006.120 |
0.802 |
|
| 2006 |
Hasan S, Salahuddin S, Vaidyanathan M, Alam MA. High-frequency performance projections for ballistic carbon-nanotube transistors Ieee Transactions On Nanotechnology. 5: 14-21. DOI: 10.1109/Tnano.2005.858594 |
0.677 |
|
| 2006 |
Hasan S, Alam MA, Lundstrom M. Simulation of carbon nanotube FETs including hot-phonon and self-heating effects Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/Ted.2007.903291 |
0.778 |
|
| 2006 |
Küflüoglu H, Alam MA. Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs Ieee Transactions On Electron Devices. 53: 1120-1130. DOI: 10.1109/Ted.2006.872098 |
0.808 |
|
| 2006 |
Kumar S, Blanchet GB, Hybertsen MS, Murthy JY, Alam MA. Performance of carbon nanotube-dispersed thin-film transistors Applied Physics Letters. 89: 143501. DOI: 10.1063/1.2357852 |
0.368 |
|
| 2006 |
Nair PR, Alam MA. Performance limits of nanobiosensors Applied Physics Letters. 88. DOI: 10.1063/1.2211310 |
0.323 |
|
| 2006 |
Guo J, Alam MA, Yoon Y. Theoretical investigation on photoconductivity of single intrinsic carbon nanotubes Applied Physics Letters. 88: 133111. DOI: 10.1063/1.2189827 |
0.308 |
|
| 2006 |
Kumar S, Pimparkar N, Murthy JY, Alam MA. Theory of transfer characteristics of nanotube network transistors Applied Physics Letters. 88. DOI: 10.1063/1.2187401 |
0.804 |
|
| 2005 |
Varghese D, Mahapatra S, Alam MA. Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface Ieee Electron Device Letters. 26: 572-574. DOI: 10.1109/Led.2005.852739 |
0.635 |
|
| 2005 |
Paul BC, Kang K, Kufluoglu H, Alam MA, Roy K. Impact of NBTI on the temporal performance degradation of digital circuits Ieee Electron Device Letters. 26: 560-562. DOI: 10.1109/Led.2005.852523 |
0.797 |
|
| 2005 |
Kumar S, Murthy JY, Alam MA. Percolating conduction in finite nanotube networks Physical Review Letters. 95. DOI: 10.1103/Physrevlett.95.066802 |
0.343 |
|
| 2005 |
Guo J, Alam MA. Carrier transport and light-spot movement in carbon-nanotube infrared emitters Applied Physics Letters. 86. DOI: 10.1063/1.1848186 |
0.316 |
|
| 2005 |
Weir BE, Leung C, Silverman PJ, Alam MA. Gate dielectric breakdown in the time-scale of ESD events Microelectronics Reliability. 45: 427-436. DOI: 10.1016/J.Microrel.2004.12.004 |
0.32 |
|
| 2005 |
Alam MA, Mahapatra S. A comprehensive model of PMOS NBTI degradation Microelectronics Reliability. 45: 71-81. DOI: 10.1016/J.Microrel.2004.03.019 |
0.342 |
|
| 2004 |
Mahapatra S, Kumar PB, Alam MA. Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs Ieee Transactions On Electron Devices. 51: 1371-1379. DOI: 10.1109/Ted.2004.833592 |
0.388 |
|
| 2004 |
Kufluoglu H, Alam MA. A computational model of NBTI and Hot Carrier Injection time-exponents for MOSFET reliability Journal of Computational Electronics. 3: 165-169. DOI: 10.1007/S10825-004-7038-9 |
0.802 |
|
| 2002 |
Alam M, Weir B, Silverman P. A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling Ieee Transactions On Electron Devices. 49: 239-246. DOI: 10.1109/16.981213 |
0.331 |
|
| 2002 |
Alam M, Weir B, Silverman P. A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance Ieee Transactions On Electron Devices. 49: 232-238. DOI: 10.1109/16.981212 |
0.325 |
|
| 2002 |
Alam MA. SILC as a measure of trap generation and predictor of T BD in ultrathin oxides Ieee Transactions On Electron Devices. 49: 226-231. DOI: 10.1109/16.981211 |
0.32 |
|
| 2002 |
Weir BE, Alam MA, Silverman PJ, Baumann F, Monroe D, Bude JD, Timp GL, Hamad A, Ma Y, Brown MM, Hwang D, Sorsch TW, Ghetti A, Wilk GD. Ultra-thin gate oxide reliability projections Solid-State Electronics. 46: 321-328. DOI: 10.1016/S0038-1101(01)00103-4 |
0.33 |
|
| 2001 |
Weir B, Alam M, Silverman P. Soft breakdown at all positions along the N-MOSFET Microelectronic Engineering. 59: 17-23. DOI: 10.1016/S0167-9317(01)00626-8 |
0.361 |
|
| 2000 |
Ketelsen LJP, Grenko JA, Sputz SK, Focht MW, Vandenberg JM, Johnson JE, Reynolds CL, Geary JM, Levkoff J, Glogovsky KG, Stampone DV, Chu SNG, Siegrist T, Pernell TL, Walters FS, ... ... Alam MA, et al. Multiwavelength DFB laser array with integrated spot size converters Ieee Journal of Quantum Electronics. 36: 641-648. DOI: 10.1109/3.845717 |
0.303 |
|
| 2000 |
Ghetti A, Alam M, Bude J, Monroe D, Sangiorgi E, Vaidya H. Stress induced leakage current analysis via quantum yield experiments Ieee Transactions On Electron Devices. 47: 1341-1348. DOI: 10.1109/16.848275 |
0.332 |
|
| 2000 |
Weir BE, Alam MA, Bude JD, Silverman PJ, Ghetti A, Baumann F, Diodato P, Monroe D, Sorsch T, Timp GL, Ma Y, Brown MM, Hamad A, Hwang D, Mason P. Gate oxide reliability projection to the sub-2 nm regime Semiconductor Science and Technology. 15: 455-461. DOI: 10.1088/0268-1242/15/5/304 |
0.332 |
|
| 1999 |
Weir BE, Silverman PJ, Alers GB, Monroe D, Alam MA, Sorsch TW, Green ML, Timp GL, Ma Y, Frei M, Liu CT, Bude JD, Krisch KS. Soft Breakdown in Ultra-Thin Oxides Mrs Proceedings. 567. DOI: 10.1557/Proc-567-301 |
0.354 |
|
| 1999 |
Grinberg AA, Alam MA, Sputz SK. Modeling of the photoluminescence in multiquantum-well heterostructure laser wafers Ieee Journal of Quantum Electronics. 35: 84-92. DOI: 10.1109/3.737624 |
0.333 |
|
| 1999 |
Cai Z, Rodrigues W, Ilinski P, Legnini D, Lai B, Yun W, Isaacs ED, Lutterodt KE, Grenko J, Glew R, Sputz S, Vandenberg J, People R, Alam MA, Hybertsen M, et al. Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices Applied Physics Letters. 75: 100-102. DOI: 10.1063/1.124288 |
0.301 |
|
| 1995 |
Alam MA, Lundstrom MS. Transition matrix approach for Monte Carlo simulation of coupled electron/phonon/photon dynamics Applied Physics Letters. 67: 512-514. DOI: 10.1063/1.114553 |
0.629 |
|
| 1995 |
Alam MA, Tanaka SI, Lundstrom MS. A small-signal, one-flux analysis of short-base transport Solid State Electronics. 38: 177-182. DOI: 10.1016/0038-1101(94)E0043-E |
0.638 |
|
| 1994 |
Alam MA, Lundstrom MS. Simulation of compound semiconductor devices using a scattering matrix approach Semiconductor Science and Technology. 9: 862-864. DOI: 10.1088/0268-1242/9/5S/125 |
0.622 |
|
| 1994 |
Alam MA, Lundstrom MS. Scattering matrix formulation of electron transport in compound semiconductor devices Solid State Electronics. 37: 1509-1520. DOI: 10.1016/0038-1101(94)90159-7 |
0.649 |
|
| 1993 |
Alam MA, Stettler MA, Lundstrom MS. A spectral flux method for solving the Boltzmann equation Journal of Applied Physics. 73: 4998-5003. DOI: 10.1063/1.353819 |
0.62 |
|
| 1993 |
Alam MA, Stettler MA, Lundstrom MS. Formulation of the Boltzmann equation in terms of scattering matrices Solid State Electronics. 36: 263-271. DOI: 10.1016/0038-1101(93)90149-K |
0.595 |
|
| 1992 |
Khondker AN, Alam MA. Density of states, electron-transport mechanisms, and chemical potentials in the presence of inelastic processes Physical Review B. 45: 8516-8525. DOI: 10.1103/Physrevb.45.8516 |
0.306 |
|
| 1992 |
Alam MA, Morrisey RA, Khondker AN. Self-consistent analysis in the presence of phase-randomizing processes for double-barrier structures Journal of Applied Physics. 71: 3077-3090. DOI: 10.1063/1.350999 |
0.341 |
|
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