David B. Janes - Publications

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Molecular Physics, Physical Chemistry

129 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kwon J, Delker CJ, Harris CT, Das SR, Janes DB. Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors Journal of Applied Physics. 128: 94501. DOI: 10.1063/5.0014759  0.64
2020 Kwon J, Delker CJ, Janes DB, Harris CT, Das SR. Molybdenum Contacts to MoS2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise Physica Status Solidi (a). 1900880. DOI: 10.1002/Pssa.201900880  0.64
2018 Rivera JF, Sridharan SV, Nolan JK, Miloro SA, Alam MA, Rickus JL, Janes DB. Real-time characterization of uptake kinetics of glioblastoma vs. astrocytes in 2D cell culture using microelectrode array. The Analyst. PMID 30225487 DOI: 10.1039/C8An01198B  0.64
2016 Das SR, Mohammed AM, Maize K, Sadeque S, Shakouri A, Janes DB, Alam MA. Evidence of Universal Temperature Scaling in Self-heated Percolating Networks. Nano Letters. PMID 27070737 DOI: 10.1021/Acs.Nanolett.6B00428  1
2016 Das SR, Sadeque S, Jeong C, Chen R, Alam MA, Janes DB. Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks Nanophotonics. 5: 180-195. DOI: 10.1515/Nanoph-2016-0036  1
2016 Sridharan SV, Rivera JF, Jin X, Janes DB, Rickus JL, Alam MA. Electrochemical micro-electrode arrays for measurement of transient concentration gradients of hydrogen peroxide Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548459  0.64
2015 Das SR, Nian Q, Saei M, Jin S, Back D, Kumar P, Janes DB, Alam MA, Cheng GJ. Single-Layer Graphene as a Barrier Layer for Intense UV Laser-Induced Damages for Silver Nanowire Network. Acs Nano. PMID 26447828 DOI: 10.1021/Acsnano.5B04628  1
2015 Maize K, Das SR, Sadeque S, Mohammed AMS, Shakouri A, Janes DB, Alam MA. Super-Joule heating in graphene and silver nanowire network Applied Physics Letters. 106. DOI: 10.1063/1.4916943  1
2015 Das SR, Kwon J, Prakash A, Delker CJ, Das S, Janes DB. Low-frequency noise in MoSe2 field effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4913714  1
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  1
2014 Das SR, Kwon J, Janes DB. 1/f noise in MoS2 field effect transistors with various layer thicknesses Materials Research Society Symposium Proceedings. 1701. DOI: 10.1557/Opl.2014.554  1
2014 Delker CJ, Zi Y, Yang C, Janes DB. Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap Ieee Transactions On Electron Devices. 61: 884-889. DOI: 10.1109/Ted.2013.2296298  1
2014 Mohammad A, Back D, Fang J, Kildishev A, Janes DB. Optical characteristics of vertically aligned arrays of branched silver nanowires 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 563-566. DOI: 10.1109/NANO.2014.6968005  1
2014 Das SR, Akatay C, Mohammad A, Khan MR, Maeda K, Deacon RS, Ishibashi K, Chen YP, Sands TD, Alam MA, Janes DB. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Journal of Applied Physics. 116. DOI: 10.1063/1.4893704  1
2013 Kim S, Kim H, Janes DB, Ju S. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements. Nanotechnology. 24: 305201. PMID 23807306 DOI: 10.1088/0957-4484/24/30/305201  1
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  1
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  1
2013 Fang J, Das SR, Prokopeva LJ, Shalaev VM, Janes DB, Kildishev AV. Time-domain modeling of silver nanowires-graphene transparent conducting electrodes Proceedings of Spie - the International Society For Optical Engineering. 8806. DOI: 10.1117/12.2026871  1
2013 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise contributions from channel and contacts in InAs nanowire transistors Ieee Transactions On Electron Devices. 60: 2900-2905. DOI: 10.1109/Ted.2013.2274009  1
2013 Razavieh A, Janes DB, Appenzeller J. Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076. DOI: 10.1109/Ted.2013.2259238  1
2013 Delker CJ, Zi Y, Yang C, Janes DB. Temperature dependence of current and low-frequency noise in InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2013.6633791  1
2013 McCarthy PT, Vander Laan SJ, Janes DB, Fisher TS. Photonically excited electron emission from modified graphitic nanopetal arrays Journal of Applied Physics. 113. DOI: 10.1063/1.4805038  1
2013 Lee S, Kim S, Janes DB, Meyyappan M, Ju S. Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications Aip Advances. 3. DOI: 10.1063/1.4789405  1
2013 Tripathy SN, Mishra BG, Shirolkar MM, Sen S, Das SR, Janes DB, Pradhan DK. Structural, microstructural and magneto-electric properties of single-phase BiFeO3 nanoceramics prepared by auto-combustion method Materials Chemistry and Physics. 141: 423-431. DOI: 10.1016/J.Matchemphys.2013.05.040  1
2013 Chen R, Das SR, Jeong C, Khan MR, Janes DB, Alam MA. Co-percolating graphene-wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes Advanced Functional Materials. 23: 5150-5158. DOI: 10.1002/Adfm.201300124  1
2013 Fang J, Das SR, Prokopeva LJ, Shalaev VM, Janes DB, Kildishev AV. Time-domain modeling of silver nano-net for transparent conducting electrodes Optics Infobase Conference Papers 1
2012 Mohammad A, Das SR, Khan MR, Alam MA, Janes DB. Wavelength-dependent absorption in structurally tailored randomly branched vertical arrays of InSb nanowires. Nano Letters. 12: 6112-8. PMID 23131195 DOI: 10.1021/Nl302803E  1
2012 Seo K, Kim S, Janes DB, Jung MW, An KS, Ju S. Effect of nitrogen plasma on the surface of indium oxide nanowires. Nanotechnology. 23: 435201. PMID 23060605 DOI: 10.1088/0957-4484/23/43/435201  1
2012 Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors. Nano Letters. 12: 5331-6. PMID 22950905 DOI: 10.1021/Nl302684S  1
2012 Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors. Acs Nano. 6: 7352-61. PMID 22775468 DOI: 10.1021/Nn302484C  1
2012 Delker CJ, Kim S, Borg M, Wernersson LE, Janes DB. 1/f noise sources in dual-gated indium arsenide nanowire transistors Ieee Transactions On Electron Devices. 59: 1980-1987. DOI: 10.1109/Ted.2012.2194150  1
2012 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 189-190. DOI: 10.1109/DRC.2012.6257046  1
2012 Chen R, Das SR, Jeong C, Janes DB, Alam MA. Exclusive electrical determination of high-resistance grain-boundaries in poly-graphene Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2012.6257034  1
2012 Kim S, Janes DB, Choi SY, Ju S. Nanoscale contacts between semiconducting nanowires and metallic graphenes Applied Physics Letters. 101. DOI: 10.1063/1.4745210  1
2011 Lee C, Srisungsitthisunti P, Park S, Kim S, Xu X, Roy K, Janes DB, Zhou C, Ju S, Qi M. Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing. Acs Nano. 5: 1095-101. PMID 21222453 DOI: 10.1021/Nn102723W  1
2011 Razavieh A, Singh N, Paul A, Klimeck G, Janes D, Appenzeller J. A new method to achieve RF linearity in SOI nanowire MOSFETs Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940626  1
2011 Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB. Room temperature device performance of electrodeposited InSb nanowire field effect transistors Applied Physics Letters. 98. DOI: 10.1063/1.3587638  1
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J  1
2010 Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203  1
2010 Kim S, Delker C, Chen P, Zhou C, Ju S, Janes DB. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology. 21: 145207. PMID 20234086 DOI: 10.1088/0957-4484/21/14/145207  1
2010 Mohammad A, Das SR, Chen YP, Sands TD, Janes DB. Electrodeposition of indium antimonide nanowires in porous anodic alumina membranes Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508899  1
2010 Scott A, Janes DB. Gold/Molecule/p+ Si devices: Variable temperature electronic transport Ieee Transactions On Nanotechnology. 9: 494-503. DOI: 10.1109/Tnano.2009.2030800  1
2010 Scott A, Risko C, Valley N, Ratner MA, Janes DB. Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results Journal of Applied Physics. 107. DOI: 10.1063/1.3251466  1
2009 Lee K, Nair PR, Scott A, Alam MA, Janes DB. Device considerations for development of conductance-based biosensors. Journal of Applied Physics. 105: 102046. PMID 24753627 DOI: 10.1063/1.3116630  1
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032  1
2009 Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266  1
2009 Kim S, Lee C, Srisungsitthisunti P, Chen P, Zhou C, Xu X, Qi M, Mohammadi S, Ju S, Janes DB. Femtosecond laser annealing effects on indium oxide nanowire transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378138  1
2009 Kim S, Xu M, Yu L, Ye PD, Janes DB, Ju S, Mohammadi S. Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2009.5354867  1
2009 Mahapatro AK, Lee GU, Jeong KJ, Janes DB. Stable and reproducible electronic conduction through DNA molecular junctions Applied Physics Letters. 95. DOI: 10.1063/1.3186056  1
2009 Scott A, Janes DB. Characterization of electrochemically grafted molecular layers on silicon for electronic device applications Journal of Applied Physics. 105. DOI: 10.1063/1.3103337  1
2009 Carpenter PD, Lodha S, Janes DB, Walker AV. Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties Chemical Physics Letters. 472: 220-223. DOI: 10.1016/J.Cplett.2009.03.019  1
2008 Lee K, Nair PR, Alam MA, Janes DB, Wampler HP, Zemlyanov DY, Ivanisevic A. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors. Journal of Applied Physics. 103: 114510-1145107. PMID 19484151 DOI: 10.1063/1.2936853  1
2008 Mahapatro AK, Ying J, Ren T, Janes DB. Electronic transport through ruthenium-based redox-active molecules in metal-molecule-metal nanogap junctions. Nano Letters. 8: 2131-6. PMID 18582119 DOI: 10.1021/Nl072982C  1
2008 Wampler HP, Zemlyanov DY, Lee K, Janes DB, Ivanisevic A. Mixed adlayer of alkanethiol and peptide on GaAs(100): quantitative characterization by X-ray photoelectron spectroscopy. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 3164-70. PMID 18275237 DOI: 10.1021/La703543G  1
2008 Wang W, Scott A, Gergel-Hackett N, Hacker CA, Janes DB, Richter CA. Probing molecules in integrated silicon-molecule-metal junctions by inelastic tunneling spectroscopy. Nano Letters. 8: 478-84. PMID 18189437 DOI: 10.1021/Nl0725289  1
2008 Ju S, Li J, Liu J, Chen PC, Ha YG, Ishikawa F, Chang H, Zhou C, Facchetti A, Janes DB, Marks TJ. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry. Nano Letters. 8: 997-1004. PMID 18069874 DOI: 10.1021/Nl072538+  1
2008 Hang Q, Wang F, Carpenter PD, Zemlyanov D, Zakharov D, Stach EA, Buhro WE, Janes DB. Role of molecular surface passivation in electrical transport properties of InAs nanowires. Nano Letters. 8: 49-55. PMID 18052229 DOI: 10.1021/Nl071888T  1
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Guest editorial special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Nanotechnology. 7: 643-650. DOI: 10.1109/Tnano.2008.2010023  1
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Electron Devices. 55: 2813-2819. DOI: 10.1109/Ted.2008.2006781  1
2008 Sun X, Yu B, Ng G, Meyyappan M, Ju S, Janes DB. Germanium antimonide phase-change nanowires for memory applications Ieee Transactions On Electron Devices. 55: 3131-3135. DOI: 10.1109/Ted.2008.2005160  1
2008 Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991  1
2008 Ju S, Chen P, Zhou C, Ha YG, Facchetti A, Marks TJ, Kim SK, Mohammadi S, Janes DB. 1f noise of SnO2 nanowire transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947586  1
2008 Lee K, Lu G, Facchetti A, Janes DB, Marks TJ. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2899965  1
2008 Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002  1
2008 Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005  1
2008 Scott A, Hacker CA, Janes DB. In situ structural characterization of metal-molecule-silicon junctions using backside infrared spectroscopy Journal of Physical Chemistry C. 112: 14021-14026. DOI: 10.1021/Jp801715S  1
2008 Chen NP, Janes DB. Distribution model of arsenic antisite defects in LTG:GaAs Journal of Physics and Chemistry of Solids. 69: 325-329. DOI: 10.1016/J.Jpcs.2007.07.026  1
2007 Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/Nnano.2007.151  1
2007 Wang F, Yu H, Li J, Hang Q, Zemlyanov D, Gibbons PC, Wang LW, Janes DB, Buhro WE. Spectroscopic properties of colloidal indium phosphide quantum wires. Journal of the American Chemical Society. 129: 14327-35. PMID 17967012 DOI: 10.1021/Ja074049H  1
2007 Mahapatro AK, Janes DB. Electrical readouts of single and few molecule systems in metal-molecule-metal device structures. Journal of Nanoscience and Nanotechnology. 7: 2134-8. PMID 17655006  0.72
2007 Hang Q, Maschmann MR, Fisher TS, Janes DB. Assemblies of carbon nanotubes and unencapsulated sub-10-nm gold nanoparticles. Small (Weinheim An Der Bergstrasse, Germany). 3: 1266-71. PMID 17487897 DOI: 10.1002/Smll.200600703  1
2007 Mahapatro AK, Janes DB. Electrical readouts of single and few molecule systems in metal-molecule-metal device structures Journal of Nanoscience and Nanotechnology. 7: 2134-2138. DOI: 10.1166/jnn.2007.783  1
2007 Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379  1
2007 Ju S, Mills AK, Hang Q, Elliott DS, Janes DB. Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25. DOI: 10.1116/1.2431351  1
2007 Ju S, Lu G, Chen PC, Facchetti A, Zhou C, Marks TJ, Janes DB. High performance in2O3 nanowire transistors using organic gate nanodielectrics 65th Drc Device Research Conference. 169-170. DOI: 10.1109/DRC.2007.4373702  1
2007 Mahapatro AK, Jeong KJ, Lee GU, Janes DB. Sequence specific electronic conduction through polyion-stabilized double-stranded DNA in nanoscale break junctions Nanotechnology. 18. DOI: 10.1088/0957-4484/18/19/195202  1
2007 Ju S, Lee K, Yoon MH, Facchetti A, Marks TJ, Janes DB. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment Nanotechnology. 18. DOI: 10.1088/0957-4484/18/15/155201  1
2007 Yu B, Ju S, Sun X, Ng G, Nguyen TD, Meyyappan M, Janes DB. Indium selenide nanowire phase-change memory Applied Physics Letters. 91. DOI: 10.1063/1.2793505  1
2007 Scott A, Janes DB, Risko C, Ratner MA. Fabrication and characterization of metal-molecule-silicon devices Applied Physics Letters. 91. DOI: 10.1063/1.2750516  1
2007 Hang Q, Wang F, Buhro WE, Janes DB. Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping Applied Physics Letters. 90. DOI: 10.1063/1.2457249  1
2007 Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E  1
2006 Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+  1
2006 Lee SY, Choi J, Royston E, Janes DB, Culver JN, Harris MT. Deposition of platinum clusters on surface-modified Tobacco mosaic virus. Journal of Nanoscience and Nanotechnology. 6: 974-81. PMID 16736753 DOI: 10.1166/Jnn.2006.146  1
2006 Mahapatro AK, Ghosh S, Janes DB. Nanometer scale electrode separation (nanogap) using electromigration at room temperature Ieee Transactions On Nanotechnology. 5: 232-236. DOI: 10.1109/Tnano.2006.874053  1
2006 Saha SK, Dasilva M, Hang Q, Sands T, Janes DB. A nanocapacitor with giant dielectric permittivity Nanotechnology. 17: 2284-2288. DOI: 10.1088/0957-4484/17/9/036  1
2006 Ju S, Janes DB, Lu G, Facchetti A, Marks TJ. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2378445  1
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon MH, Facchetti A, Mark TJ. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2336744  1
2006 Lodha S, Janes DB. Metal/molecule/p-type GaAs heterostructure devices Journal of Applied Physics. 100. DOI: 10.1063/1.2210569  1
2006 Mahapatro AK, Scott A, Manning A, Janes DB. Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer Applied Physics Letters. 88. DOI: 10.1063/1.2183820  1
2006 Lodha S, Carpenter P, Janes DB. Effect of contact properties on current transport in metal/molecule/GaAs devices Journal of Applied Physics. 99. DOI: 10.1063/1.2164530  1
2005 Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Letters. 5: 2281-6. PMID 16277468 DOI: 10.1021/Nl051658J  1
2005 Ghosh S, Halimun H, Mahapatro AK, Choi J, Lodha S, Janes D. Device structure for electronic transport through individual molecules using nanoelectrodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2140470  1
2005 Howell SW, Janes DB. Time evolution studies of the electrostatic surface potential of low-temperature-grown GaAs using electrostatic force microscopy Journal of Applied Physics. 97. DOI: 10.1063/1.1844615  1
2004 Lodha S, Janes DB. Enhanced current densities in Au/molecule/GaAs devices Applied Physics Letters. 85: 2809-2811. DOI: 10.1063/1.1799235  1
2004 Choi J, Lee K, Janes DB. Nanometer scale gap made by conventional microscale fabrication: Step junction Nano Letters. 4: 1699-1703. DOI: 10.1021/Nl049113X  1
2003 Lodha S, Choi J, Bhattacharya S, Janes DB. Metal-molecule-semiconductor heterostructures for nano-device applications Proceedings of the Ieee Conference On Nanotechnology. 1: 311-314. DOI: 10.1109/NANO.2003.1231780  1
2003 Choi J, Janes DB, Lodha S, Chen Y, Agarwal R, Andres R, Burns S, Kubiak CP. Conduction through molecule-gold cluster complexes and application Proceedings of the Ieee Conference On Nanotechnology. 1: 164-167. DOI: 10.1109/NANO.2003.1231741  1
2003 Bhattacharya S, Choi J, Lodha S, Janes DB, Bonilla AF, Jeong KJ, Lee GU. Electronic conduction in DNA attached to gold electrodes Proceedings of the Ieee Conference On Nanotechnology. 1: 79-82. DOI: 10.1109/NANO.2003.1231719  1
2003 Lodha S, Janes DB. Metal-molecule-semiconductor heterostructures for nanoelectronic applications 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 446-447. DOI: 10.1109/ISDRS.2003.1272177  1
2003 Janes DB, Ghosh S, Choi J, Lodha S, Bhattacharya S. Circuit characteristics of molecular electronic components Proceedings of the International Conference On Application-Specific Systems, Architectures and Processors. 2003: 125-131. DOI: 10.1109/ASAP.2003.1212836  1
2003 Lodha S, Janes DB, Chen NP. Unpinned interface Fermi-level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions Journal of Applied Physics. 93: 2772-2779. DOI: 10.1063/1.1536734  1
2002 Wei L, Zhang R, Roy K, Chen Z, Janes DB. Vertically integrated SOI circuits for low-power and high-performance applications Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 10: 351-362. DOI: 10.1109/Tvlsi.2002.1043338  1
2002 Lodha S, Janes DB, Chen NP. Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs Applied Physics Letters. 80: 4452-4454. DOI: 10.1063/1.1484243  1
2002 Zhang R, Roy K, Koh CK, Janes DB. Exploring SOI device structures and interconnect architectures for low-power high-performance circuits Iee Proceedings: Computers and Digital Techniques. 149: 137-145. DOI: 10.1049/ip-cdt:20020451  1
2002 Howell S, Kuila D, Kasibhatla B, Kubiak CP, Janes D, Reifenberger R. Molecular electrostatics of conjugated self-assembled monolayers on Au(111) using electrostatic force microscopy Langmuir. 18: 5120-5125. DOI: 10.1021/La0157014  1
2002 McNally H, Janes DB, Kasibhatla B, Kubiak CP. Electrostatic investigation into the bonding of poly(phenylene) thiols to gold Superlattices and Microstructures. 31: 239-245. DOI: 10.1006/Spmi.2002.1027  1
2001 Zhang R, Roy K, Koh CK, Janes DB. Power trends and performance characterization of 3-Dimensional integration for future technology generations Proceedings - International Symposium On Quality Electronic Design, Isqed. 2001: 217-222. DOI: 10.1109/ISQED.2001.915230  1
2001 Zhang R, Roy K, Koh CK, Janes DB. Power trends and performance characterization of 3-dimensional integration Materials Research Society Symposium - Proceedings. 626. DOI: 10.1109/ISCAS.2001.922261  1
2001 Ueng HJ, Janes DB, Webb KJ. Error analysis leading to design criteria for transmission line model characterization of ohmic contacts Ieee Transactions On Electron Devices. 48: 758-766. DOI: 10.1109/16.915721  1
2001 Zhang R, Roy K, Koh CK, Janes DB. Stochastic interconnect modeling, power trends, and performance characterization of 3-D circuits Ieee Transactions On Electron Devices. 48: 638-652. DOI: 10.1109/16.915671  1
2001 Ueng HJ, Chen NP, Janes DB, Webb KJ, McInturff DT, Melloch MR. Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts Journal of Applied Physics. 90: 5637-5641. DOI: 10.1063/1.1410324  1
2000 Lee T, Chen NP, Liu J, Andres RP, Janes DB, Chen EH, Melloch MR, Woodall JM, Reifenberger R. Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs Applied Physics Letters. 76: 212-214. DOI: 10.1063/1.125705  1
2000 Janes DB, Batistuta M, Datta S, Melloch MR, Andres RP, Liu J, Chen NP, Lee T, Reifenberger R, Chen EH, Woodall JM. Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers Superlattices and Microstructures. 27: 555-563. DOI: 10.1006/Spmi.2000.0882  1
1998 Przadka A, Webb KJ, Janes DB. Two-port noise and impedance measurements for two-terminal devices with a resonant tunneling diode example Ieee Transactions On Microwave Theory and Techniques. 46: 1215-1220. DOI: 10.1109/22.709459  1
1997 Bandyopadhyay S, Roychowdhury VP, Janes DB. Self-Assembling Quantum Circuits with Clusters, Molecules and Quantum Dots The Japan Society of Applied Physics. 1997: 312-313. DOI: 10.7567/Ssdm.1997.B-9-3  0.4
1997 Roychowdhury VP, Janes DB, Bandyopadhyay S. Nanoelectronic architecture for boolean logic Proceedings of the Ieee. 85: 574-587. DOI: 10.1109/5.573742  1
1996 Andres RP, Bielefeld JD, Henderson JI, Janes DB, Kolagunta VR, Kubiak CP, Mahoney WJ, Osifchin RG. Self-assembly of a two-dimensional superlattice of molecularly linked metal clusters Science. 273: 1690-1693. DOI: 10.1126/Science.273.5282.1690  1
1996 Andres RP, Datta S, Dorogi M, Gomez J, Henderson JI, Janes DB, Kolagunta VR, Kubiak CP, Mahoney W, Osifchin RF, Reifenberger R, Samanta MP, Tian W. Room temperature Coulomb blockade and Coulomb staircase from self-assembled nanostructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 1178-1183. DOI: 10.1116/1.580262  1
1996 Roychowdhury VP, Janes DB, Bandyopadhyay S, Wang X. Collective computational activity in self-assembled arrays of quantum dots: A novel neuromorphic architecture for nanoelectronics Ieee Transactions On Electron Devices. 43: 1688-1699. DOI: 10.1109/16.536815  1
1996 Huang KC, Janes DB, Webb KJ, Melloch MR. A transfer length model for contact resistance of two-layer systems with arbitrary interlayer coupling under the contacts Ieee Transactions On Electron Devices. 43: 676-684. DOI: 10.1109/16.491242  1
1995 Janes DB, Webb KJ, Carroll MS, Starnes GE, Huang KC, Shenoy J, Melloch MR. Direct current and microwave characterization of integrated resonant tunneling diodes Journal of Applied Physics. 78: 6616-6625. DOI: 10.1063/1.360483  1
1995 Hong S, Reifenberger R, Janes DB, McInturff D, Woodall JM. Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy Applied Physics Letters. 2258. DOI: 10.1063/1.115877  1
1995 Janes DB, Kolagunta VR, Osifchin RG, Bielefeld JD, Andres RP, Henderson JI, Kubiak CP. Electronic conduction through 2D arrays of nanometer diameter metal clusters Superlattices and Microstructures. 18: 275. DOI: 10.1006/Spmi.1995.1112  1
1995 Cohen EB, Janes DB, Webb KJ, Shenoy JN, Woodall JM, Melloch MR. 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor Superlattices and Microstructures. 17: 345-349. DOI: 10.1006/Spmi.1995.1061  1
1995 Kolagunta VR, Janes DB, Chen GL, Webb KJ, Melloch MR. Vertical three-terminal structures in semiconductor heterostructure quantum wells using a novel sidewall gating technique Superlattices and Microstructures. 17: 339-343. DOI: 10.1006/Spmi.1995.1060  1
1992 Janes DB, Hoskins MJ. Response Characteristics of Trapping Loss in Acoustic Charge Transport Devices Ieee Transactions On Electron Devices. 39: 2452-2458. DOI: 10.1109/16.163457  1
1990 Janes D, Hoskins MJ. Trap emission rates in GaAs in the presence of surface acoustic waves Journal of Applied Physics. 67: 6315-6322. DOI: 10.1063/1.345150  1
1989 Janes D, Hoskins MJ. Experimental and theoretical characterization of trap-related transfer loss in acoustic charge transport devices Journal of Applied Physics. 66: 3883-3891. DOI: 10.1063/1.344053  1
1989 Janes D, Hoskins MJ, Brophy MJ. Transfer loss in acoustic charge transport devices due to electron traps induced by proton bombardment Journal of Applied Physics. 66: 6150-6157. DOI: 10.1063/1.343598  1
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