Rajib Rahman, Ph.D. - Publications

Affiliations: 
2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering

43 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Chan KW, Sahasrabudhe H, Huang W, Wang Y, Yang HC, Veldhorst M, Hwang JCC, Mohiyaddin FA, Hudson FE, Itoh KM, Saraiva A, Morello A, Laucht A, Rahman R, Dzurak AS. Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon. Nano Letters. PMID 33481612 DOI: 10.1021/acs.nanolett.0c04771  0.48
2019 Pang CS, Chen CY, Ameen T, Zhang S, Ilatikhameneh H, Rahman R, Klimeck G, Chen Z. WSe Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing. Small (Weinheim An Der Bergstrasse, Germany). e1902770. PMID 31448564 DOI: 10.1002/smll.201902770  0.92
2018 Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano. PMID 30563322 DOI: 10.1021/acsnano.8b06441  0.92
2018 Hile SJ, Fricke L, House MG, Peretz E, Chen CY, Wang Y, Broome M, Gorman SK, Keizer JG, Rahman R, Simmons MY. Addressable electron spin resonance using donors and donor molecules in silicon. Science Advances. 4: eaaq1459. PMID 30027114 DOI: 10.1126/sciadv.aaq1459  0.48
2018 Ameen TA, Ilatikhameneh H, Tankasala A, Hsueh Y, Charles J, Fonseca J, Povolotskyi M, Kim JO, Krishna S, Allen MS, Allen JW, Rahman R, Klimeck G. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9: 1075-1084. PMID 29719758 DOI: 10.3762/bjnano.9.99  0.92
2017 Watson TF, Weber B, Hsueh YL, Hollenberg LLC, Rahman R, Simmons MY. Atomically engineered electron spin lifetimes of 30 s in silicon. Science Advances. 3: e1602811. PMID 29159289 DOI: 10.1126/sciadv.1602811  0.48
2017 Tosi G, Mohiyaddin FA, Schmitt V, Tenberg S, Rahman R, Klimeck G, Morello A. Silicon quantum processor with robust long-distance qubit couplings. Nature Communications. 8: 450. PMID 28878207 DOI: 10.1038/s41467-017-00378-x  0.92
2017 Zheng C, Zhang Q, Weber B, Ilatikhameneh H, Chen F, Sahasrabudhe H, Rahman R, Li S, Chen Z, Hellerstedt J, Zhang Y, Duan WH, Bao Q, Fuhrer MS. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures. Acs Nano. PMID 28221762 DOI: 10.1021/acsnano.6b07832  0.92
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 38120. PMID 27901074 DOI: 10.1038/srep38120  0.92
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 31830. PMID 27550779 DOI: 10.1038/srep31830  0.92
2016 Ilatikhameneh H, Ameen T, Novakovic B, Tan Y, Klimeck G, Rahman R. Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass. Scientific Reports. 6: 31501. PMID 27538849 DOI: 10.1038/srep31501  0.92
2016 Ameen TA, Ilatikhameneh H, Klimeck G, Rahman R. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors. Scientific Reports. 6: 28515. PMID 27345020 DOI: 10.1038/srep28515  0.92
2016 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Communications. 7: 11342. PMID 27094205 DOI: 10.1038/ncomms11342  0.84
2016 Ilatikhameneh H, Salazar RB, Klimeck G, Rahman R, Appenzeller J. From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling Ieee Transactions On Electron Devices. 63: 2871-2878. DOI: 10.1109/TED.2016.2565582  0.84
2016 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Design rules for high performance tunnel transistors from 2-D materials Ieee Journal of the Electron Devices Society. 4: 260-265. DOI: 10.1109/JEDS.2016.2568219  0.84
2015 Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Electrically controlling single-spin qubits in a continuous microwave field. Science Advances. 1: e1500022. PMID 26601166 DOI: 10.1126/sciadv.1500022  0.92
2015 Chu T, Ilatikhameneh H, Klimeck G, Rahman R, Chen Z. Electrically Tunable Bandgaps in Bilayer MoS2. Nano Letters. PMID 26560813 DOI: 10.1021/acs.nanolett.5b03218  0.84
2015 Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207  0.92
2015 Neupane MR, Rahman R, Lake RK. Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals. Physical Chemistry Chemical Physics : Pccp. 17: 2484-93. PMID 25493297 DOI: 10.1039/c4cp03711a  0.84
2015 Tan YHM, Ryu H, Weber B, Lee S, Rahman R, Hollenberg LCL, Simmons MY, Klimeck G. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348589  0.84
2015 Weber B, Tan YHM, Mahapatra S, Watson TF, Ryu H, Lee S, Rahman R, Hollenberg LCL, Klimeck G, Simmons MY. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348550  0.84
2015 Ilatikhameneh H, Rahman R, Appenzeller J, Klimeck G. Electrically doped WTe2 tunnel transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 270-272. DOI: 10.1109/SISPAD.2015.7292311  0.84
2015 Chen FW, Ilatikhameneh H, Klimeck G, Rahman R, Chu T, Chen Z. Achieving a higher performance in bilayer graphene FET - Strain engineering International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 177-181. DOI: 10.1109/SISPAD.2015.7292288  0.84
2015 Ilatikhameneh H, Ameen TA, Klimeck G, Appenzeller J, Rahman R. Dielectric Engineered Tunnel Field-Effect Transistor Ieee Electron Device Letters. 36: 1097-1100. DOI: 10.1109/LED.2015.2474147  0.84
2015 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Scaling Theory of Electrically Doped 2D Transistors Ieee Electron Device Letters. 36: 726-728. DOI: 10.1109/LED.2015.2436356  0.84
2015 Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/JXCDC.2015.2426433  0.84
2015 Ilatikhameneh H, Tan Y, Novakovic B, Klimeck G, Rahman R, Appenzeller J. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 12-18. DOI: 10.1109/JXCDC.2015.2423096  0.84
2015 Ameen TA, Ilatikhameneh H, Valencia D, Rahman R, Klimeck G. Engineering the optical transitions of self-assembled quantum dots 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301940  0.84
2015 Usman M, Hill CD, Rahman R, Klimeck G, Simmons MY, Rogge S, Hollenberg LCL. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.245209  0.84
2015 Salazar RB, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations Journal of Applied Physics. 118. DOI: 10.1063/1.4934682  0.84
2014 Pla JJ, Mohiyaddin FA, Tan KY, Dehollain JP, Rahman R, Klimeck G, Jamieson DN, Dzurak AS, Morello A. Coherent control of a single ²⁹Si nuclear spin qubit. Physical Review Letters. 113: 246801. PMID 25541792  0.92
2014 Hsueh YL, Büch H, Tan Y, Wang Y, Hollenberg LC, Klimeck G, Simmons MY, Rahman R. Spin-lattice relaxation times of single donors and donor clusters in silicon. Physical Review Letters. 113: 246406. PMID 25541787  0.92
2014 Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Nature Nanotechnology. 9: 430-5. PMID 24727686 DOI: 10.1038/nnano.2014.63  0.84
2014 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Spatially resolving valley quantum interference of a donor in silicon. Nature Materials. 13: 605-10. PMID 24705384 DOI: 10.1038/nmat3941  0.84
2014 Ameen T, Ilatikhameneh H, Charles J, Hsueh Y, Chen S, Fonseca J, Povolotskyi M, Rahman R, Klimeck G. Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 921-924. DOI: 10.1109/NANO.2014.6968137  0.84
2013 Nguyen KT, Lilly MP, Nielsen E, Bishop N, Rahman R, Young R, Wendt J, Dominguez J, Pluym T, Stevens J, Lu TM, Muller R, Carroll MS. Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot. Nano Letters. 13: 5785-90. PMID 24199677 DOI: 10.1021/nl4020759  0.84
2013 Mohiyaddin FA, Rahman R, Kalra R, Klimeck G, Hollenberg LC, Pla JJ, Dzurak AS, Morello A. Noninvasive spatial metrology of single-atom devices. Nano Letters. 13: 1903-9. PMID 23570240 DOI: 10.1021/nl303863s  0.92
2011 Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LC, Rogge S. Lifetime-enhanced transport in silicon due to spin and valley blockade. Physical Review Letters. 107: 136602. PMID 22026881 DOI: 10.1103/PhysRevLett.107.136602  0.92
2011 Rahman R, Park SH, Klimeck G, Hollenberg LC. Stark tuning of the charge states of a two-donor molecule in silicon. Nanotechnology. 22: 225202. PMID 21454928 DOI: 10.1088/0957-4484/22/22/225202  0.92
2010 Rahman R, Muller RP, Levy JE, Carroll MS, Klimeck G, Greentree AD, Hollenberg LCL. Coherent electron transport by adiabatic passage in an imperfect donor chain Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.155315  0.84
2009 Park SH, Rahman R, Klimeck G, Hollenberg LC. Mapping donor electron wave function deformations at a sub-Bohr orbit resolution. Physical Review Letters. 103: 106802. PMID 19792334 DOI: 10.1103/PhysRevLett.103.106802  0.92
2009 Rahman R, Park SH, Cole JH, Greentree AD, Muller RP, Klimeck G, Hollenberg LCL. Atomistic simulations of adiabatic coherent electron transport in triple donor systems Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.035302  0.84
2007 Rahman R, Wellard CJ, Bradbury FR, Prada M, Cole JH, Klimeck G, Hollenberg LC. High precision quantum control of single donor spins in silicon. Physical Review Letters. 99: 036403. PMID 17678301 DOI: 10.1103/PhysRevLett.99.036403  0.84
Show low-probability matches.