Year |
Citation |
Score |
2020 |
Usman M. Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires. Nanoscale. 12: 20973-20983. PMID 33053001 DOI: 10.1039/D0Nr04728G |
0.379 |
|
2020 |
Usman M, Wong YZ, Hill CD, Hollenberg LCL. Framework for atomic-level characterisation of quantum computer arrays by machine learning Arxiv: Mesoscale and Nanoscale Physics. 6: 1-8. DOI: 10.1038/S41524-020-0282-0 |
0.342 |
|
2020 |
Anwar SJ, Usman M, Ramzan M, Khan MK. Quantum Fisher Information of Two Moving Four-Level Atoms Journal of Russian Laser Research. 41: 310-320. DOI: 10.1007/S10946-020-09880-Y |
0.319 |
|
2019 |
Usman M. Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs core-shell nanowires. Nanoscale. PMID 31612894 DOI: 10.1039/C9Nr07237C |
0.351 |
|
2019 |
Usman M. Atomistic tight binding study of quantum confined Stark effect in GaBixAs1-x/GaAs quantum wells. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31288219 DOI: 10.1088/1361-648X/Ab307E |
0.392 |
|
2018 |
Salfi J, Voisin B, Tankasala A, Bocquel J, Usman M, Simmons MY, Hollenberg LCL, Rahman R, Rogge S. Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049. DOI: 10.1103/Physrevx.8.031049 |
0.597 |
|
2018 |
Tankasala A, Salfi J, Bocquel J, Voisin B, Usman M, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S, Rahman R. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97. DOI: 10.1103/Physrevb.97.195301 |
0.672 |
|
2018 |
Usman M, Broderick CA, O'Reilly EP. Impact of disorder on the optoelectronic properties of GaNyAs1−x−yBix alloys and heterostructures Physical Review Applied. 10: 1-17. DOI: 10.1103/Physrevapplied.10.044024 |
0.319 |
|
2017 |
Usman M, Voisin B, Salfi J, Rogge S, Hollenberg LCL. Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale. PMID 29082402 DOI: 10.1039/C7Nr05081J |
0.319 |
|
2016 |
Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology. PMID 27271965 DOI: 10.1038/Nnano.2016.83 |
0.625 |
|
2016 |
Usman M, Suvanam SS, Yazdi MG, Göthelid M, Sultan M, Hallén A. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/25/255308 |
0.302 |
|
2016 |
Manzoor A, Afzal AM, Amin N, Arshad MI, Usman M, Rasool MN, Khan MF. Investigation of dielectric and optical properties of structurally modified bismuth ferrite nanomaterials Ceramics International. 42: 11447-11452. DOI: 10.1016/J.Ceramint.2016.04.083 |
0.309 |
|
2015 |
Usman M. Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules. Nanoscale. 7: 16516-29. PMID 26395806 DOI: 10.1039/C5Nr04710B |
0.367 |
|
2015 |
Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207 |
0.663 |
|
2015 |
Usman M, Hill CD, Rahman R, Klimeck G, Simmons MY, Rogge S, Hollenberg LCL. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.245209 |
0.677 |
|
2015 |
Suvanam SS, Gulbinas K, Usman M, Linnarson MK, Martin DM, Linnros J, Grivickas V, Hallén A. 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption Journal of Applied Physics. 117. DOI: 10.1063/1.4914521 |
0.318 |
|
2015 |
Ahmed S, Sundaresan S, Ryu H, Usman M. Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields Journal of Computational Electronics. 14: 543-556. DOI: 10.1007/S10825-015-0682-4 |
0.606 |
|
2014 |
Tasco V, Usman M, De Giorgi M, Passaseo A. Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics. Nanotechnology. 25: 055207. PMID 24407042 DOI: 10.1088/0957-4484/25/5/055207 |
0.399 |
|
2014 |
Broderick CA, Mazzucato S, Carrère H, Amand T, Makhloufi H, Arnoult A, Fontaine C, Donmez O, Erol A, Usman M, O'Reilly EP, Marie X. Anisotropic electron g factor as a probe of the electronic structure of GaBix As1-x/ GaAs epilayers Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195301 |
0.361 |
|
2014 |
Usman M. Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks Physical Review B. 89. DOI: 10.1103/Physrevb.89.081302 |
0.363 |
|
2014 |
Usman M, O'Reilly EP. Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells Applied Physics Letters. 104: 71103. DOI: 10.1063/1.4865827 |
0.359 |
|
2014 |
Usman M, Nawaz M. Device design assessment of 4H–SiC n-IGBT – A simulation study Solid-State Electronics. 92: 5-11. DOI: 10.1016/J.Sse.2013.10.019 |
0.305 |
|
2013 |
Usman M, Henkel C, Hallén A. HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices Ecs Journal of Solid State Science and Technology. 2: N3087-N3091. DOI: 10.1149/2.013308Jss |
0.317 |
|
2013 |
Usman M, Broderick CA, Batool Z, Hild K, Hosea TJC, Sweeney SJ, O'Reilly EP. Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115104 |
0.324 |
|
2013 |
Usman M, Broderick CA, O'Reilly EP. Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models Arxiv: Materials Science. 1566: 21-22. DOI: 10.1063/1.4848265 |
0.312 |
|
2013 |
Tasco V, Usman M, Todaro MT, Giorgi MD, Passaseo A. Understanding polarization properties of InAs quantum dots by atomistic modeling of growth dynamics Arxiv: Mesoscale and Nanoscale Physics. 1566: 15-16. DOI: 10.1063/1.4848262 |
0.364 |
|
2013 |
Tahir N, Karim A, Persson KA, Hussain ST, Cruz AG, Usman M, Naeem M, Qiao R, Yang W, Chuang YD, Hussain Z. Surface defects: Possible source of room temperature ferromagnetism in Co-doped ZnO nanorods Journal of Physical Chemistry C. 117: 8968-8973. DOI: 10.1021/Jp311012M |
0.307 |
|
2013 |
Broderick CA, Usman M, O'Reilly EP. 12‐band k · p model for dilute bismide alloys of (In)GaAs derived from supercell calculations Physica Status Solidi B-Basic Solid State Physics. 250: 773-778. DOI: 10.1002/Pssb.201200423 |
0.302 |
|
2012 |
Usman M, Tasco V, Todaro MT, De Giorgi M, O'Reilly EP, Klimeck G, Passaseo A. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. Nanotechnology. 23: 165202. PMID 22469563 DOI: 10.1088/0957-4484/23/16/165202 |
0.56 |
|
2012 |
Usman M. Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots Physical Review B. 86: 155444. DOI: 10.1103/Physrevb.86.155444 |
0.356 |
|
2012 |
Broderick CA, Usman M, Sweeney SJ, O'Reilly EP. Band engineering in dilute nitride and bismide semiconductor lasers Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/9/094011 |
0.301 |
|
2011 |
Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations. Nanotechnology. 22: 315709. PMID 21737873 DOI: 10.1088/0957-4484/22/31/315709 |
0.666 |
|
2011 |
Usman M, Broderick CA, Lindsay A, O’Reilly EP. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Physical Review B. 84. DOI: 10.1103/Physrevb.84.245202 |
0.311 |
|
2011 |
Usman M, Inoue T, Harda Y, Klimeck G, Kita T. Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks Physical Review B. 84. DOI: 10.1103/Physrevb.84.115321 |
0.558 |
|
2011 |
Usman M. In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots Journal of Applied Physics. 110: 94512. DOI: 10.1063/1.3657783 |
0.367 |
|
2011 |
Usman M, Heck S, Clarke E, Spencer P, Ryu H, Murray R, Klimeck G. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Journal of Applied Physics. 109: 104510. DOI: 10.1063/1.3587167 |
0.655 |
|
2010 |
Maaz K, Karim S, Usman M, Mumtaz A, Liu J, Duan JL, Maqbool M. Effect of crystallographic texture on magnetic characteristics of cobalt nanowires Nanoscale Research Letters. 5: 1111-1117. DOI: 10.1007/S11671-010-9610-5 |
0.301 |
|
2009 |
Usman M, Ryu H, Woo I, Ebert DS, Klimeck G. Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data Ieee Transactions On Nanotechnology. 8: 330-344. DOI: 10.1109/Tnano.2008.2011900 |
0.661 |
|
2009 |
Usman M, Vasileska D, Klimeck G. Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications Aip Conference Proceedings. 1199: 527-528. DOI: 10.1063/1.3295541 |
0.5 |
|
2007 |
Klimeck G, Ahmed S, Kharche N, Korkusinski M, Usman M, Prada M, Boykin T. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications Ieee Transactions On Electron Devices. 54: 2090-2099. DOI: 10.1109/Ted.2007.904877 |
0.717 |
|
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