Year |
Citation |
Score |
2016 |
Salmani Jelodar M, Ilatikhameneh H, Sarangapani P, Mehrotra SR, Klimeck G, Kim S, Ng K. Tunneling: The major issue in ultra-scaled MOSFETs Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 670-673. DOI: 10.1109/NANO.2015.7388694 |
0.513 |
|
2015 |
Salmani-Jelodar M, Mehrotra SR, Ilatikhameneh H, Klimeck G. Design Guidelines for Sub-12 nm Nanowire MOSFETs Ieee Transactions On Nanotechnology. 14: 210-213. DOI: 10.1109/Tnano.2015.2395441 |
0.6 |
|
2015 |
Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)] Journal of Applied Physics. 118: 019901. DOI: 10.1063/1.4923312 |
0.487 |
|
2015 |
Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations Journal of Applied Physics. 117. DOI: 10.1063/1.4919091 |
0.575 |
|
2014 |
Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567 |
0.575 |
|
2013 |
Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078 |
0.552 |
|
2013 |
Mehrotra SR, Kim S, Kubis T, Povolotskyi M, Lundstrom MS, Klimeck G. Engineering nanowire n-MOSFETs at Lg<8 nm Ieee Transactions On Electron Devices. 60: 2171-2177. DOI: 10.1109/Ted.2013.2263806 |
0.621 |
|
2013 |
Mehrotra SR, Povolotskyi M, Elias DC, Kubis T, Law JJM, Rodwell MJW, Klimeck G. Simulation study of thin-body ballistic n-MOSFETs involving transport in mixed Γ-L valleys Ieee Electron Device Letters. 34: 1196-1198. DOI: 10.1109/Led.2013.2273072 |
0.612 |
|
2013 |
Mehrotra S, Long P, Povolotskyi M, Klimeck G. Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGexnanowires Physica Status Solidi (Rrl) - Rapid Research Letters. 7: 903-906. DOI: 10.1002/Pssr.201307124 |
0.558 |
|
2012 |
Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Observation of 1D behavior in Si nanowires: toward high-performance TFETs. Nano Letters. 12: 5571-5. PMID 23030672 DOI: 10.1021/Nl3025664 |
0.578 |
|
2012 |
Mehrotra S, Povolotskyi M, Law J, Kubis T, Klimeck G, Rodwell M. Design of high-current L-valley GaAs=AlAs0.56Sb 0.44/InP (111) ultra-thin-body nMOSFETs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 151-154. DOI: 10.1109/ICIPRM.2012.6403344 |
0.554 |
|
2011 |
Tettamanzi GC, Paul A, Lee S, Mehrotra SR, Collaert N, Biesemans S, Klimeck G, Rogge S. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs Ieee Electron Device Letters. 32: 440-442. DOI: 10.1109/Led.2011.2106150 |
0.539 |
|
2011 |
Paul A, Mehrotra S, Klimeck G, Rodwell M. Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Device Research Conference - Conference Digest, Drc. 233-234. DOI: 10.1109/DRC.2011.5994511 |
0.503 |
|
2011 |
Paul A, Tettamanzi GC, Lee S, Mehrotra SR, Collaert N, Biesemans S, Rogge S, Klimeck G. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs Journal of Applied Physics. 110: 124507. DOI: 10.1063/1.3660697 |
0.567 |
|
2011 |
Mehrotra SR, Paul A, Klimeck G. Atomistic approach to alloy scattering in Si1−xGex Applied Physics Letters. 98: 173503. DOI: 10.1063/1.3583983 |
0.597 |
|
2010 |
Paul A, Mehrotra S, Luisier M, Klimeck G. Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs Ieee Electron Device Letters. 31: 278-280. DOI: 10.1109/Led.2010.2040577 |
0.662 |
|
2010 |
Kubis T, Mehrotra SR, Klimeck G. Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements Applied Physics Letters. 97: 261106. DOI: 10.1063/1.3524197 |
0.509 |
|
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