Saumitra R. Mehrotra, Ph.D. - Publications

Affiliations: 
2014 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanoscience

17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Salmani Jelodar M, Ilatikhameneh H, Sarangapani P, Mehrotra SR, Klimeck G, Kim S, Ng K. Tunneling: The major issue in ultra-scaled MOSFETs Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 670-673. DOI: 10.1109/NANO.2015.7388694  0.513
2015 Salmani-Jelodar M, Mehrotra SR, Ilatikhameneh H, Klimeck G. Design Guidelines for Sub-12 nm Nanowire MOSFETs Ieee Transactions On Nanotechnology. 14: 210-213. DOI: 10.1109/Tnano.2015.2395441  0.6
2015 Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)] Journal of Applied Physics. 118: 019901. DOI: 10.1063/1.4923312  0.487
2015 Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations Journal of Applied Physics. 117. DOI: 10.1063/1.4919091  0.575
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.575
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  0.552
2013 Mehrotra SR, Kim S, Kubis T, Povolotskyi M, Lundstrom MS, Klimeck G. Engineering nanowire n-MOSFETs at Lg<8 nm Ieee Transactions On Electron Devices. 60: 2171-2177. DOI: 10.1109/Ted.2013.2263806  0.621
2013 Mehrotra SR, Povolotskyi M, Elias DC, Kubis T, Law JJM, Rodwell MJW, Klimeck G. Simulation study of thin-body ballistic n-MOSFETs involving transport in mixed Γ-L valleys Ieee Electron Device Letters. 34: 1196-1198. DOI: 10.1109/Led.2013.2273072  0.612
2013 Mehrotra S, Long P, Povolotskyi M, Klimeck G. Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGexnanowires Physica Status Solidi (Rrl) - Rapid Research Letters. 7: 903-906. DOI: 10.1002/Pssr.201307124  0.558
2012 Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Observation of 1D behavior in Si nanowires: toward high-performance TFETs. Nano Letters. 12: 5571-5. PMID 23030672 DOI: 10.1021/Nl3025664  0.578
2012 Mehrotra S, Povolotskyi M, Law J, Kubis T, Klimeck G, Rodwell M. Design of high-current L-valley GaAs=AlAs0.56Sb 0.44/InP (111) ultra-thin-body nMOSFETs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 151-154. DOI: 10.1109/ICIPRM.2012.6403344  0.554
2011 Tettamanzi GC, Paul A, Lee S, Mehrotra SR, Collaert N, Biesemans S, Klimeck G, Rogge S. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs Ieee Electron Device Letters. 32: 440-442. DOI: 10.1109/Led.2011.2106150  0.539
2011 Paul A, Mehrotra S, Klimeck G, Rodwell M. Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Device Research Conference - Conference Digest, Drc. 233-234. DOI: 10.1109/DRC.2011.5994511  0.503
2011 Paul A, Tettamanzi GC, Lee S, Mehrotra SR, Collaert N, Biesemans S, Rogge S, Klimeck G. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs Journal of Applied Physics. 110: 124507. DOI: 10.1063/1.3660697  0.567
2011 Mehrotra SR, Paul A, Klimeck G. Atomistic approach to alloy scattering in Si1−xGex Applied Physics Letters. 98: 173503. DOI: 10.1063/1.3583983  0.597
2010 Paul A, Mehrotra S, Luisier M, Klimeck G. Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs Ieee Electron Device Letters. 31: 278-280. DOI: 10.1109/Led.2010.2040577  0.662
2010 Kubis T, Mehrotra SR, Klimeck G. Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements Applied Physics Letters. 97: 261106. DOI: 10.1063/1.3524197  0.509
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