Year |
Citation |
Score |
2014 |
Goldfeld M, Christensen J, Pollard D, Gibson ER, Olesberg JT, Koerperick EJ, Lanz K, Small GW, Arnold MA, Evans CE. Advanced near-infrared monitor for stable real-time measurement and control of Pichia pastoris bioprocesses Biotechnology Progress. 30: 749-759. DOI: 10.1002/Btpr.1890 |
0.31 |
|
2013 |
Lubyshev D, Fastenau JM, Qiu Y, Liu AWK, Koerperick EJ, Olesberg JT, Norton D, Faleev NN, Honsberg CB. MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates Proceedings of Spie. 8704: 870412. DOI: 10.1117/12.2019039 |
0.77 |
|
2013 |
Fastenau JM, Lubyshev D, Qiu Y, Liu AWK, Koerperick EJ, Olesberg JT, Norton D. MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31. DOI: 10.1116/1.4792516 |
0.748 |
|
2013 |
Norton DT, Olesberg JT, McGee RT, Waite NA, Dickason J, Goossen KW, Lawler J, Sullivan G, Ikhlassi A, Kiamilev F, Koerperick EJ, Murray LM, Prineas JP, Boggess TF. 512 × 512 individually addressable MWIR LED arrays based on type-II InAs/GaSb superlattices Ieee Journal of Quantum Electronics. 49: 753-759. DOI: 10.1109/Jqe.2013.2272878 |
0.701 |
|
2013 |
Fastenau JM, Lubyshev D, Qiu Y, Liu AWK, Koerperick EJ, Olesberg JT, Norton D. Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE Infrared Physics & Technology. 59: 158-162. DOI: 10.1016/J.Infrared.2012.12.033 |
0.775 |
|
2012 |
Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Koerperick EJ, Olesberg JT, Norton D. Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates Proceedings of Spie. 8268. DOI: 10.1117/12.909571 |
0.766 |
|
2011 |
Koerperick EJ, Norton DT, Olesberg JT, Olson BV, Prineas JP, Boggess TF. Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared Ieee Journal of Quantum Electronics. 47: 50-54. DOI: 10.1109/Jqe.2010.2072492 |
0.664 |
|
2010 |
Lubyshev D, Fastenau JM, Gu X, Liu AWK, Prineas J, Koerperick EJ, Olesberg JT, Jackson EM, Nolde JA, Yi C, Aifer EH. MBE growth of Sb-based type-II strained layer superlattice structures on multi-wafer production reactors Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.851053 |
0.548 |
|
2010 |
Koerperick EJ, Murray LM, Norton DT, Boggess TF, Prineas JP. Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux Journal of Crystal Growth. 312: 185-191. DOI: 10.1016/J.Jcrysgro.2009.10.033 |
0.736 |
|
2009 |
Das NC, Taysing-Lara M, Olver KA, Kiamilev F, Prineas JP, Olesberg JT, Koerperick EJ, Murray LM, Boggess TF. Flip chip bonding of 68 × 68 MWIR LED arrays Ieee Transactions On Electronics Packaging Manufacturing. 32: 9-13. DOI: 10.1109/Tepm.2008.2005062 |
0.356 |
|
2009 |
Koerperick EJ, Olesberg JT, Hicks JL, Prineas JP, Boggess TF. High-power MWIR cascaded InAs-GaSb superlattice LEDs Ieee Journal of Quantum Electronics. 45: 849-853. DOI: 10.1109/Jqe.2009.2013176 |
0.426 |
|
2008 |
Koerperick EJ, Olesberg JT, Hicks JL, Prineas JP, Boggess TF. Active region cascading for improved performance in InAs-GaSb superlattice LEDs Ieee Journal of Quantum Electronics. 44: 1242-1247. DOI: 10.1109/Jqe.2008.2003145 |
0.468 |
|
2008 |
Koerperick EJ, Olesberg JT, Boggess TF, Hicks JL, Wassink LS, Murray LM, Prineas JP. InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 μm Applied Physics Letters. 92. DOI: 10.1063/1.2892633 |
0.489 |
|
2007 |
Hall KC, Koerperick EJ, Boggess TF, Shchekin OB, Deppe DG. Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Applied Physics Letters. 90. DOI: 10.1063/1.2437063 |
0.591 |
|
2005 |
Gündoǧdu K, Hall KC, Koerperick EJ, Pryor CE, Flatté ME, Boggess TF, Shchekin OB, Deppe DG. Electron and hole spin dynamics in semiconductor quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857067 |
0.593 |
|
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