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Haldun Kufluoglu, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Küflüoǧlu H, Chancellor C, Chen M, Cirba C, Reddy V. Recovery modeling of negative bias temperature instability (nbti) for spice-compatible circuit aging simulators Acm Journal On Emerging Technologies in Computing Systems. 10. DOI: 10.1145/2517648  0.419
2007 Varghese D, Kufluoglu H, Reddy V, Shichijo H, Mosher D, Krishnan S, Alam MA. OFF-state degradation in drain-extended NMOS transistors: Interface damage and correlation to dielectric breakdown Ieee Transactions On Electron Devices. 54: 2669-2678. DOI: 10.1109/Ted.2007.904587  0.64
2007 Islam AE, Kufluoglu H, Varghese D, Mahapatra S, Alam MA. Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation Ieee Transactions On Electron Devices. 54: 2143-2154. DOI: 10.1109/Ted.2007.902883  0.644
2007 Küflüog̃lu H, Alam MA. A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation Ieee Transactions On Electron Devices. 54: 1101-1107. DOI: 10.1109/Ted.2007.893809  0.578
2007 Kang K, Kufluoglu H, Roy K, Alam MA. Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 26: 1770-1781. DOI: 10.1109/Tcad.2007.896317  0.486
2007 Paul BC, Kang K, Kufluoglu H, Alam MA, Roy K. Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 26: 743-751. DOI: 10.1109/Tcad.2006.884870  0.552
2007 Islam AE, Kufluoglu H, Varghese D, Alam MA. Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements Applied Physics Letters. 90. DOI: 10.1063/1.2695998  0.643
2007 Alam MA, Kufluoglu H, Varghese D, Mahapatra S. A comprehensive model for PMOS NBTI degradation: Recent progress Microelectronics Reliability. 47: 853-862. DOI: 10.1016/J.Microrel.2006.10.012  0.648
2006 Küflüoglu H, Alam MA. Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs Ieee Transactions On Electron Devices. 53: 1120-1130. DOI: 10.1109/Ted.2006.872098  0.592
2005 Paul BC, Kang K, Kufluoglu H, Alam MA, Roy K. Impact of NBTI on the temporal performance degradation of digital circuits Ieee Electron Device Letters. 26: 560-562. DOI: 10.1109/Led.2005.852523  0.548
2004 Kufluoglu H, Alam MA. A computational model of NBTI and Hot Carrier Injection time-exponents for MOSFET reliability Journal of Computational Electronics. 3: 165-169. DOI: 10.1007/S10825-004-7038-9  0.623
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