Ahmad E. Islam, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering

25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Amama PB, Islam AE, Saber SM, Huffman DR, Maruyama B. Understanding properties of engineered catalyst supports using contact angle measurements and X-Ray reflectivity. Nanoscale. PMID 26781333 DOI: 10.1039/c5nr08108d  1
2016 Jiang J, Pachter R, Demeritte T, Ray PC, Islam AE, Maruyama B, Boeckl JJ. Modeling Graphene with Nanoholes: Structure and Characterization by Raman Spectroscopy with Consideration for Electron Transport Journal of Physical Chemistry C. 120: 5371-5383. DOI: 10.1021/Acs.Jpcc.5B10225  1
2016 Jiang J, Pachter R, Islam AE, Maruyama B, Boeckl JJ. Defect-induced Raman spectroscopy in single-layer graphene with boron and nitrogen substitutional defects by theoretical investigation Chemical Physics Letters. 663: 79-83. DOI: 10.1016/J.Cplett.2016.09.067  1
2016 Islam AE, Goel N, Mahapatra S, Alam MA. Reaction-Diffusion model Springer Series in Advanced Microelectronics. 139: 181-207. DOI: 10.1007/978-81-322-2508-9_5  1
2015 Islam AE, Rogers JA, Alam MA. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications. Advanced Materials (Deerfield Beach, Fla.). PMID 26540144 DOI: 10.1002/Adma.201502918  1
2015 Islam AE, Nikoleav P, Amama PB, Zakharov D, Sargent G, Saber S, Huffman D, Erford M, Semiatin SL, Stach EA, Maruyama B. Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth Proceedings of Spie - the International Society For Optical Engineering. 9552. DOI: 10.1117/12.2187052  1
2015 Rao R, Islam AE, Pierce N, Nikolaev P, Maruyama B. Chiral angle-dependent defect evolution in CVD-grown single-walled carbon nanotubes Carbon. 95: 287-291. DOI: 10.1016/J.Carbon.2015.08.049  1
2015 Jiang J, Pachter R, Mehmood F, Islam AE, Maruyama B, Boeckl JJ. A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D') intensity ratio by theoretical analysis Carbon. 90: 53-62. DOI: 10.1016/J.Carbon.2015.03.049  1
2014 Du F, Felts JR, Xie X, Song J, Li Y, Rosenberger MR, Islam AE, Jin SH, Dunham SN, Zhang C, Wilson WL, Huang Y, King WP, Rogers JA. Laser-induced nanoscale thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes. Acs Nano. 8: 12641-9. PMID 25495504 DOI: 10.1021/Nn505566R  1
2014 Xie X, Jin SH, Wahab MA, Islam AE, Zhang C, Du F, Seabron E, Lu T, Dunham SN, Cheong HI, Tu YC, Guo Z, Chung HU, Li Y, Liu Y, et al. Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes. Nature Communications. 5: 5332. PMID 25387684 DOI: 10.1038/Ncomms6332  1
2013 Jin SH, Dunham SN, Song J, Xie X, Kim JH, Lu C, Islam A, Du F, Kim J, Felts J, Li Y, Xiong F, Wahab MA, Menon M, Cho E, et al. Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes. Nature Nanotechnology. 8: 347-55. PMID 23624697 DOI: 10.1038/Nnano.2013.56  1
2013 Wahab MA, Jin SH, Islam AE, Kim J, Kim JH, Yeo WH, Lee DJ, Chung HU, Rogers JA, Alam MA. Electrostatic dimension of aligned-array carbon nanotube field-effect transistors. Acs Nano. 7: 1299-308. PMID 23320505 DOI: 10.1021/Nn304794W  1
2013 Islam AE. Variability and reliability of single-walled carbon nanotube field effect transistors Electronics. 2: 332-367. DOI: 10.3390/electronics2040332  1
2012 Xie X, Grosse KL, Song J, Lu C, Dunham S, Du F, Islam AE, Li Y, Zhang Y, Pop E, Huang Y, King WP, Rogers JA. Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy. Acs Nano. 6: 10267-75. PMID 23061768 DOI: 10.1021/Nn304083A  1
2012 Xie X, Islam AE, Wahab MA, Ye L, Ho X, Alam MA, Rogers JA. Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts. Acs Nano. 6: 7981-8. PMID 22866943 DOI: 10.1021/Nn3025496  1
2012 Jain A, Islam AE, Alam MA. On the electro-mechanical reliability of NEMFET as an analog/digital switch Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2012.6241915  1
2012 Islam AE, Du F, Ho X, Hun Jin S, Dunham S, Rogers JA. Effect of variations in diameter and density on the statistics of aligned array carbon-nanotube field effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3692048  1
2011 Kim DH, Lu N, Ma R, Kim YS, Kim RH, Wang S, Wu J, Won SM, Tao H, Islam A, Yu KJ, Kim TI, Chowdhury R, Ying M, Xu L, et al. Epidermal electronics. Science (New York, N.Y.). 333: 838-43. PMID 21836009 DOI: 10.1126/science.1206157  1
2011 Satter MM, Islam AE, Varghese D, Alam MA, Haque A. A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Solid-State Electronics. 56: 141-147. DOI: 10.1016/J.Sse.2010.10.017  1
2011 Islam AE, Alam MA. Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory Journal of Computational Electronics. 10: 341-351. DOI: 10.1007/S10825-011-0369-4  1
2010 Jain A, Islam AE, Alam MA. A theoretical study of negative bias temperature instability in p-type NEMFET Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508940  1
2010 Islam AE, Alam MA. Mobility enhancement due to charge trapping & defect generation: Physics of self-compensated BTI Ieee International Reliability Physics Symposium Proceedings. 65-72. DOI: 10.1109/IRPS.2010.5488853  1
2009 Islam AE, Alam MA. Self-compensating the effect of defect generation in advanced CMOS substrates Ieee International Integrated Reliability Workshop Final Report. 97-101. DOI: 10.1109/IRWS.2009.5383024  1
2008 Islam AE, Alam MA. On the possibility of degradation-free field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2919798  1
2007 Islam AE, Kufluoglu H, Varghese D, Alam MA. Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements Applied Physics Letters. 90. DOI: 10.1063/1.2695998  1
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