Aaron D. Franklin, Ph.D. - Publications

2005-2008 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering, Molecular Physics, Physical Chemistry

39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Cheng Z, Cardenas JA, McGuire F, Najmaei S, Franklin AD. Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source Ieee Electron Device Letters. 37: 1234-1237. DOI: 10.1109/Led.2016.2591552  1
2016 Cheng Z, Cardenas JA, McGuire F, Franklin AD. Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548484  1
2016 McGuire FA, Cheng Z, Price K, Franklin AD. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer Applied Physics Letters. 109. DOI: 10.1063/1.4961108  1
2015 Cao Q, Han SJ, Tersoff J, Franklin AD, Zhu Y, Zhang Z, Tulevski GS, Tang J, Haensch W. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance. Science (New York, N.Y.). 350: 68-72. PMID 26430114 DOI: 10.1126/Science.Aac8006  1
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements Ieee Transactions On Electron Devices. 62: 3061-3069. DOI: 10.1109/Ted.2015.2457453  1
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part II: Extrinsic Elements, Performance Assessment, and Design Optimization Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2457424  1
2015 Franklin AD. Carbon Nanotube Electronics Emerging Nanoelectronic Devices. 315-335. DOI: 10.1002/9781118958254.ch16  1
2014 Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, Afzali A, Han SJ, Hannon JB, Haensch W. Toward high-performance digital logic technology with carbon nanotubes. Acs Nano. 8: 8730-45. PMID 25144443 DOI: 10.1021/Nn503627H  1
2014 Franklin AD, Farmer DB, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. Acs Nano. 8: 7333-9. PMID 24999536 DOI: 10.1021/Nn5024363  1
2014 Kim B, Franklin A, Nuckolls C, Haensch W, Tulevski GS. Achieving low-voltage thin-film transistors using carbon nanotubes Applied Physics Letters. 105. DOI: 10.1063/1.4891335  1
2013 Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. Acs Nano. 7: 8303-8. PMID 24006886 DOI: 10.1021/Nn403935V  1
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/Nl400544Q  1
2013 Smith JT, Franklin AD, Farmer DB, Dimitrakopoulos CD. Reducing contact resistance in graphene devices through contact area patterning. Acs Nano. 7: 3661-7. PMID 23473291 DOI: 10.1021/Nn400671Z  0.4
2013 Luo J, Wei L, Lee CS, Franklin AD, Guan X, Pop E, Antoniadis DA, Philip Wong HS. Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length Ieee Transactions On Electron Devices. 60: 1834-1843. DOI: 10.1109/Ted.2013.2258023  1
2013 Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, Gignac L. Stacking graphene channels in parallel for enhanced performance with the same footprint Ieee Electron Device Letters. 34: 556-558. DOI: 10.1109/Led.2013.2242428  1
2012 Park H, Afzali A, Han SJ, Tulevski GS, Franklin AD, Tersoff J, Hannon JB, Haensch W. High-density integration of carbon nanotubes via chemical self-assembly. Nature Nanotechnology. 7: 787-91. PMID 23103933 DOI: 10.1038/Nnano.2012.189  1
2012 Cao Q, Han SJ, Tulevski GS, Franklin AD, Haensch W. Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes. Acs Nano. 6: 6471-7. PMID 22671996 DOI: 10.1021/Nn302185D  1
2012 Han SJ, Reddy D, Carpenter GD, Franklin AD, Jenkins KA. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. Acs Nano. 6: 5220-6. PMID 22582702 DOI: 10.1021/Nn300978C  1
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z  1
2012 Franklin AD, Luisier M, Han SJ, Tulevski G, Breslin CM, Gignac L, Lundstrom MS, Haensch W. Sub-10 nm carbon nanotube transistor. Nano Letters. 12: 758-62. PMID 22260387 DOI: 10.1021/Nl203701G  1
2012 Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors Ieee Electron Device Letters. 33: 17-19. DOI: 10.1109/Led.2011.2173154  1
2011 Han SJ, Jenkins KA, Valdes Garcia A, Franklin AD, Bol AA, Haensch W. High-frequency graphene voltage amplifier. Nano Letters. 11: 3690-3. PMID 21805988 DOI: 10.1021/Nl2016637  1
2011 Franklin AD, Han SJ, Bol AA, Haensch W. Effects of nanoscale contacts to graphene Ieee Electron Device Letters. 32: 1035-1037. DOI: 10.1109/Led.2011.2158058  1
2011 Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications Technical Digest - International Electron Devices Meeting, Iedm. 23.3.1-23.3.4. DOI: 10.1109/IEDM.2011.6131596  1
2011 Han SJ, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, Jenkins KA, Haensch W. Graphene technology with inverted-T gate and RF passives on 200 mm platform Technical Digest - International Electron Devices Meeting, Iedm. 2.2.1-2.2.4. DOI: 10.1109/IEDM.2011.6131473  1
2010 Westover TL, Franklin AD, Cola BA, Fisher TS, Reifenberger RG. Photo- and thermionic emission from potassium-intercalated carbon nanotube arrays Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 423-434. DOI: 10.1116/1.3368466  1
2010 Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/Tcapt.2009.2038488  1
2010 Han SJ, Chang J, Franklin AD, Bol AA, Loesing R, Guo D, Tulevski GS, Haensch W, Chen Z. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates Technical Digest - International Electron Devices Meeting, Iedm. 9.1.1-9.1.4. DOI: 10.1109/IEDM.2010.5703326  1
2009 Claussen JC, Franklin AD, Ul Haque A, Porterfield DM, Fisher TS. Electrochemical biosensor of nanocube-augmented carbon nanotube networks. Acs Nano. 3: 37-44. PMID 19206246 DOI: 10.1021/Nn800682M  1
2009 Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266  1
2009 Franklin AD, Sayer RA, Sands TD, Janes DB, Fisher TS. Vertical carbon nanotube devices with nanoscale lengths controlled without lithography Ieee Transactions On Nanotechnology. 8: 469-476. DOI: 10.1109/Tnano.2009.2012399  1
2008 Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991  1
2008 Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002  1
2008 Voggu R, Rout CS, Franklin AD, Fisher TS, Rao CNR. Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer Journal of Physical Chemistry C. 112: 13053-13056. DOI: 10.1021/Jp805136E  1
2007 Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379  1
2007 Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E  1
2007 Maschmann MR, Franklin AD, Sands TD, Fisher TS. Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates Carbon. 45: 2290-2296. DOI: 10.1016/J.Carbon.2007.05.031  1
2006 Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+  1
2006 Maschmann MR, Franklin AD, Amama PB, Zakharov DN, Stach EA, Sands TD, Fisher TS. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates Nanotechnology. 17: 3925-3929. DOI: 10.1088/0957-4484/17/15/052  1
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