Dongjae Lim, Ph.D. - Publications

2013 Industrial Engineering and Management Sciences Northwestern University, Evanston, IL 
Industrial Engineering, Finance, Operations Research

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Lim DH, Kang M, Jang SY, Hwang K, Kim IB, Jung E, Jo YR, Kim YJ, Kim J, Choi H, Kim TW, Mathur S, Kim BJ, Kim DY. Unsymmetrical Small Molecules for Broadband Photoresponse and Efficient Charge Transport in Organic Phototransistors. Acs Applied Materials & Interfaces. PMID 32297509 DOI: 10.1021/acsami.0c02229  0.32
2018 Lee C, Rathi S, Khan MA, Lim D, Kim Y, Yun SJ, Youn DH, Watanabe K, Taniguchi T, Kim GH. Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake Based Field Effect Transistors on SiO2 and hBN Substrates. Nanotechnology. PMID 29786609 DOI: 10.1088/1361-6528/aac6b0  0.32
2018 Kang M, Rathi S, Lee I, Li L, Khan MA, Lim D, Lee Y, Park J, Pham AT, Duong AT, Cho S, Yun SJ, Kim GH. Photodetector Based on Multilayer SnSe₂ Field Effect Transistor. Journal of Nanoscience and Nanotechnology. 18: 4243-4247. PMID 29442769 DOI: 10.1166/jnn.2018.15189  0.32
2017 Annadurai V, Rathi S, Lee IY, Park J, Lim D, Joh HI, Kang M, Kim GH, Kannan ES. Molybdenum disulfide nanoparticles decorated reduced graphene oxide: Highly sensitive and selective hydrogen sensor. Nanotechnology. PMID 28675152 DOI: 10.1088/1361-6528/aa7d66  0.32
2017 Kang M, Rathi S, Lee I, Li L, Khan MA, Lim D, Lee Y, Park J, Yun SJ, Youn DH, Jun C, Kim GH. Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment. Nanoscale. PMID 28074961 DOI: 10.1039/c6nr08467b  0.32
2016 Lee I, Rathi S, Lim D, Li L, Park J, Lee Y, Yi KS, Dhakal KP, Kim J, Lee C, Lee GH, Kim YD, Hone J, Yun SJ, Youn DH, et al. Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27619888 DOI: 10.1002/adma.201601949  0.32
2016 Li L, Lee I, Lim D, Rathi S, Kang M, Uemura T, Kim GH. Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrode. Nanotechnology. 27: 335201. PMID 27378597 DOI: 10.1088/0957-4484/27/33/335201  0.32
2016 Tan WL, Tan EH, Lim DW, Ng QS, Tan DS, Jain A, Ang MK. Advances in systemic treatment for nasopharyngeal carcinoma. Chinese Clinical Oncology. 5: 21. PMID 27121881 DOI: 10.21037/cco.2016.03.03  0.32
2016 Lim D, Kannan ES, Lee I, Rathi S, Li L, Lee Y, Khan MA, Kang M, Park J, Kim GH. High performance MoS2-based field-effect transistor enabled by hydrazine doping. Nanotechnology. 27: 225201. PMID 27098430 DOI: 10.1088/0957-4484/27/22/225201  0.32
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