Year |
Citation |
Score |
2018 |
Narayan SR, Day JM, Thinakaran HL, Herbots N, Bertram ME, Cornejo CE, Diaz TC, Kavanagh KL, Culbertson RJ, Ark FJ, Ram S, Mangus MW, Islam R. Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis Mrs Advances. 3: 3379-3390. DOI: 10.1557/Adv.2018.473 |
0.748 |
|
2017 |
Pershad Y, Herbots N, Day G, Haren Rv, Whaley S, Martinez A, Suhartono S, Culbertson R, Mangus M, Wilkens B. Determining Canine Blood and Human Blood Composition by Congealing Microliter Drops into Homogeneous Thin Solid Films (HTSFs) via HemaDrop Mrs Advances. 2: 2451-2456. DOI: 10.1557/Adv.2017.479 |
0.65 |
|
2012 |
Herbots N, Xing Q, Hart M, Bradley JD, Sell DA, Culbertson R, Wilkens BJ. IBMM of OH adsorbates and interphases on Si-based materials Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 272: 330-333. DOI: 10.1016/J.Nimb.2011.01.094 |
0.74 |
|
2008 |
Zeng L, Helgren E, Rahimi M, Hellman F, Islam R, Wilkens BJ, Culbertson RJ, Smith DJ. Quenched magnetic moment in Mn-doped amorphous Si films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.073306 |
0.419 |
|
2008 |
Wu F, Pavlovska A, Smith D, Culbertson R, Wilkens BJ, Bauer E. Growth and structure of epitaxial CeO2 films on yttria-stabilized ZrO2 Thin Solid Films. 516: 4908-4914. DOI: 10.1016/J.Tsf.2007.09.026 |
0.398 |
|
2007 |
Bradley JD, Herbots N, Culbertson R, Shaw J, Atluri V. A new 3D multistring code to identify compound oxide nanophase with ion channeling Mrs Proceedings. 996: 109-114. DOI: 10.1557/Proc-0996-H05-14 |
0.633 |
|
2006 |
Shaw JM, Herbots N, Hurst QB, Bradley D, Culbertson RJ, Atluri V, Queeney KT. Atomic displacement free interfaces and atomic registry in SiO 2/(1×1) Si(100) Journal of Applied Physics. 100. DOI: 10.1063/1.2358835 |
0.662 |
|
2001 |
Herbots N, Shaw JM, Hurst QB, Grams MP, Culbertson RJ, Smith DJ, Atluri V, Zimmerman P, Queeney KT. The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0) Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 303-316. DOI: 10.1016/S0921-5107(01)00729-2 |
0.669 |
|
1999 |
Hurst QB, Herbots N, Shaw JM, Floyd MM, Smith D, Culbertson R, Grams MP, Bradley JD, Zimmerman P, Atluri V. Long range order in ultra-thin SiO 2 grown on ordered Si(100) Mrs Proceedings. 567: 181-187. DOI: 10.1557/Proc-567-181 |
0.728 |
|
1997 |
Lorentzen JD, Loechelt GH, Meléndez-Lira M, Menéndez J, Sego S, Culbertson RJ, Windl W, Sankey OF, Bair AE, Alford TL. Photoluminescence in Si1−x−yGexCy alloys Applied Physics Letters. 70: 2353-2355. DOI: 10.1063/1.118871 |
0.435 |
|
1996 |
Meléndez-Lira M, Menéndez J, Windl W, Sankey OF, Spencer GS, Sego S, Culbertson RB, Bair AE, Alford TL. Carbon dependence of Raman mode frequencies in Si1-x-yGexCy alloys. Physical Review. B, Condensed Matter. 54: 12866-12872. PMID 9985144 DOI: 10.1103/Physrevb.54.12866 |
0.361 |
|
1996 |
Bair AE, Alford T, Sego S, Atzmon Z, Culbertson R. An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys Materials Chemistry and Physics. 46: 283-287. DOI: 10.1016/S0254-0584(96)01812-3 |
0.468 |
|
1995 |
Bair AE, Alford T, Sego S, Atzmon Z, Culbertson R. X-ray diffraction analysis of the strain of SiGeC/(100)Si alloys Mrs Proceedings. 399: 461-466. DOI: 10.1557/Proc-399-461 |
0.371 |
|
1994 |
Sego S, Culbertson R, Ye P, Hearne S, Xiang J, Herbots N, Atzmon Z, Bair AE. Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis Mrs Proceedings. 354: 461-469. DOI: 10.1557/Proc-354-461 |
0.71 |
|
1994 |
Russell SW, Bair AE, Rack MJ, Adams D, Spreitzer RL, Alford T, Culbertson R. Investigation of chromium nitridation using ion beam resonance analysis Mrs Proceedings. 337: 619-624. DOI: 10.1557/Proc-337-619 |
0.339 |
|
1994 |
Copel M, Culbertson R, Tromp RM. Relaxation and H coverage of ammonium fluoride treated Si(111) Applied Physics Letters. 65: 2344-2346. DOI: 10.1063/1.112740 |
0.559 |
|
1992 |
Hellman OC, Vancauwenberghe O, Herbots N, Olson J, Culbertson R, Croft WJ. Structure and properties of silicon nitride and SixGe1−x nitride prepared by direct low energy ion beam nitridation Materials Science and Engineering B-Advanced Functional Solid-State Materials. 12: 53-59. DOI: 10.1016/0921-5107(92)90258-B |
0.744 |
|
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