| Year |
Citation |
Score |
| 2020 |
Fan Z, Bunk R, Wang G, Woodall JM. In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 42204. DOI: 10.1116/6.0000245 |
0.402 |
|
| 2020 |
Fan Z, Yaddanapudi K, Bunk R, Mahajan S, Woodall JM. Interface studies of molecular beam epitaxy (MBE) grown ZnSe–GaAs heterovalent structures Journal of Applied Physics. 127: 245701. DOI: 10.1063/5.0008780 |
0.443 |
|
| 2020 |
Siao H, Bunk RJ, Woodall JM. Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies Journal of Electronic Materials. 49: 3435-3440. DOI: 10.1007/S11664-019-07848-6 |
0.388 |
|
| 2017 |
Patil-Chaudhari D, Ombaba M, Oh JY, Mao H, Montgomery KH, Lange A, Mahajan S, Woodall JM, Islam MS. Solar Blind Photodetectors Enabled by Nanotextured β-Ga2O3 Films Grown via Oxidation of GaAs Substrates Ieee Photonics Journal. 9: 1-7. DOI: 10.1109/Jphot.2017.2688463 |
0.741 |
|
| 2016 |
Harotoonian V, Woodall JM. Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts Journal of Electronic Materials. 45: 6305-6309. DOI: 10.1007/S11664-016-5030-3 |
0.35 |
|
| 2016 |
Noorzad CD, Zhao X, Harotoonian V, Woodall JM. Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology Journal of Electronic Materials. 45: 6317-6322. DOI: 10.1007/S11664-016-5015-2 |
0.386 |
|
| 2015 |
Nian Q, Montgomery KH, Zhao X, Jackson T, Woodall JM, Cheng GJ. Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer Applied Physics a: Materials Science and Processing. DOI: 10.1007/S00339-015-9493-5 |
0.753 |
|
| 2014 |
Zhao X, Montgomery KH, Woodall JM. Hall effect studies of algaas grown by liquid-phase epitaxy for tandem solar cell applications Journal of Electronic Materials. 43: 3999-4002. DOI: 10.1007/S11664-014-3340-X |
0.754 |
|
| 2014 |
Zhao X, Montgomery KH, Woodall JM. Layered growth of lattice-mismatched Ga x In1-x P on GaP substrates by liquid phase epitaxy Journal of Electronic Materials. 43: 894-901. DOI: 10.1007/S11664-013-2966-4 |
0.738 |
|
| 2013 |
Berdebes D, Bhosale J, Montgomery KH, Wang X, Ramdas AK, Woodall JM, Lundstrom MS. Photoluminescence excitation spectroscopy for in-line optical characterization of crystalline solar cells Ieee Journal of Photovoltaics. 3: 1342-1347. DOI: 10.1109/Jphotov.2013.2278884 |
0.715 |
|
| 2012 |
Woodall JM. Heterogeneous integration of semiconductor materials: basic issues, current progress, and future prospects Proceedings of Spie. 8373. DOI: 10.1117/12.917911 |
0.334 |
|
| 2011 |
Simmonds PJ, Simon J, Woodall JM, Lee ML. Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547716 |
0.335 |
|
| 2011 |
Allen CR, Woodall JM, Jeon J-. Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight Solar Energy Materials and Solar Cells. 95: 2655-2658. DOI: 10.1016/J.Solmat.2011.05.034 |
0.335 |
|
| 2011 |
Ziebarth JT, Woodall JM, Kramer RA, Choi G. Liquid phase-enabled reaction of Al-Ga and Al-Ga-In-Sn alloys with water International Journal of Hydrogen Energy. 36: 5271-5279. DOI: 10.1016/J.Ijhydene.2011.01.127 |
0.73 |
|
| 2011 |
Montgomery KH, Allen CR, Wildeson IH, Jeon JH, Ramdas AK, Woodall JM. Gettered GaP substrates for improved multijunction solar cell devices Journal of Electronic Materials. 40: 1457-1460. DOI: 10.1007/S11664-011-1605-1 |
0.747 |
|
| 2010 |
Allen CR, Jeon J, Woodall JM. Simulation assisted design of a gallium phosphide n–p photovoltaic junction Solar Energy Materials and Solar Cells. 94: 865-868. DOI: 10.1016/J.Solmat.2010.01.009 |
0.335 |
|
| 2009 |
Agarwal S, Montgomery KH, Boykin TB, Klimeck G, Woodall JM. Design guidelines for true green LEDs and high efficiency photovoltaics using ZnSe/GaAs digital alloys Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3250436 |
0.728 |
|
| 2009 |
Chen A, Woodall JM. Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P Applied Physics Letters. 94: 21102. DOI: 10.1063/1.3069282 |
0.387 |
|
| 2008 |
Li N, Harmon ES, Salzman DB, Zakharov DN, Jeon JH, Stach E, Woodall JM, Wang XW, Ma TP, Walker F. Molecular beam epitaxy growth of InAs and In0.8 Ga0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1187-1190. DOI: 10.1116/1.2912086 |
0.41 |
|
| 2007 |
Yang T, Xuan Y, Zemlyanov D, Shen T, Wu YQ, Woodall JM, Ye PD, Aguirre-Tostado FS, Milojevic M, McDonnell S, Wallace RM. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric Applied Physics Letters. 91: 142122. DOI: 10.1063/1.2798499 |
0.366 |
|
| 2007 |
Chen A, Woodall JM. Field-effect transistors on molecular beam epitaxy GaP Applied Physics Letters. 90: 103509. DOI: 10.1063/1.2710476 |
0.376 |
|
| 2006 |
Chen A, Young M, Li W, Ma TP, Woodall JM. Metal-insulator-semiconductor structure on low-temperature grown GaAs Applied Physics Letters. 89: 233514. DOI: 10.1063/1.2404605 |
0.445 |
|
| 2006 |
Chen A, Young M, Woodall JM. InAs/InGaP/GaAs heterojunction power Schottky rectifiers Electronics Letters. 42: 417-419. DOI: 10.1049/El:20064437 |
0.412 |
|
| 2005 |
Sun Y, Yulius A, Woodall JM. Efficient drift dominated photodiodes using defected materials Applied Physics Letters. 86: 91108. DOI: 10.1063/1.1875757 |
0.393 |
|
| 2004 |
Beck AL, Yang B, Wang S, Collins CJ, Campbell JC, Yulius A, Chen A, Woodall JM. Quasi-direct UV/blue GaP avalanche photodetectors Ieee Journal of Quantum Electronics. 40: 1695-1699. DOI: 10.1109/Jqe.2004.837788 |
0.372 |
|
| 2004 |
Pan JL, McManis J, Grober L, Woodall J. Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Solid-State Electronics. 48: 2067-2070. DOI: 10.1016/J.Sse.2004.05.071 |
0.35 |
|
| 2004 |
Sun Y, Yulius A, Li G, Woodall JM. Drift dominated InP/GaP photodiodes Solid-State Electronics. 48: 1975-1979. DOI: 10.1016/J.Sse.2004.05.043 |
0.387 |
|
| 2003 |
Pan JL, McManis JE, Osadchy T, Grober L, Woodall JM, Kindlmann PJ. Gallium arsenide deep-level optical emitter for fibre optics. Nature Materials. 2: 375-8. PMID 12738958 DOI: 10.1038/Nmat887 |
0.3 |
|
| 2003 |
Boone TD, Tsukamoto H, Woodall JM. Intensity and spatial modulation of spontaneous emission in GaAs by field aperture selecting transport Applied Physics Letters. 82: 3197-3199. DOI: 10.1063/1.1572467 |
0.333 |
|
| 2003 |
Pan J, McManis J, Grober L, Woodall J. Gallium-arsenide deep-level pin tunnel diode with very negative conductance Electronics Letters. 39: 1411. DOI: 10.1049/El:20030895 |
0.386 |
|
| 2001 |
Zhu R, Hargis MC, Woodall JM, Melloch MR. Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact Ieee Photonics Technology Letters. 13: 103-105. DOI: 10.1109/68.910502 |
0.301 |
|
| 2001 |
Tsukamoto H, Chen E-, Woodall JM, Gopal V. Correlation of defect profiles with carrier profiles of InAs epilayers on GaP Applied Physics Letters. 78: 952-954. DOI: 10.1063/1.1338956 |
0.351 |
|
| 2000 |
Chen N, Ueng HJ, Janes DB, Woodall JM, Melloch MR. A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs Journal of Applied Physics. 88: 309-315. DOI: 10.1063/1.373658 |
0.427 |
|
| 2000 |
Gopal V, Souw V, Chen E-, Kvam EP, McElfresh M, Woodall JM. Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP Journal of Applied Physics. 87: 1350-1355. DOI: 10.1063/1.372062 |
0.415 |
|
| 2000 |
Souw V, Gopal V, Chen E-, Kvam EP, McElfresh M, Woodall JM. Growth temperature dependence of transport properties of InAs epilayers grown on GaP Applied Physics Letters. 77: 1176-1178. DOI: 10.1063/1.1289269 |
0.366 |
|
| 2000 |
Liu J, Lee T, Janes DB, Walsh BL, Melloch MR, Woodall JM, Reifenberger R, Andres RP. Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers Applied Physics Letters. 77: 373-375. DOI: 10.1063/1.126980 |
0.327 |
|
| 2000 |
Souw V, Li S, McElfresh M, Duan Z, McInturff D, Yulius A, Chen E-, Woodall JM. Reliable contacts to two-dimensional conduction layers Applied Physics Letters. 76: 3307-3309. DOI: 10.1063/1.126615 |
0.42 |
|
| 2000 |
Lee T, Chen NP, Liu J, Andres RP, Janes DB, Chen EH, Melloch MR, Woodall JM, Reifenberger R. Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs Applied Physics Letters. 76: 212-214. DOI: 10.1063/1.125705 |
0.415 |
|
| 2000 |
Gopal V, Chen E-, Kvam EP, Woodall JM. Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs Journal of Electronic Materials. 29: 1333-1339. DOI: 10.1007/S11664-000-0134-0 |
0.418 |
|
| 2000 |
Janes DB, Lee T, Liu J, Batistuta M, Chen N, Walsh BL, Andres RP, Chen E-, Melloch MR, Woodall JM, Reifenberger R. Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications Journal of Electronic Materials. 29: 565-569. DOI: 10.1007/S11664-000-0046-Z |
0.383 |
|
| 2000 |
Janes DB, Batistuta M, Datta S, Melloch MR, Andres RP, Liu J, Chen NP, Lee T, Reifenberger R, Chen EH, Woodall JM. Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers Superlattices and Microstructures. 27: 555-563. DOI: 10.1006/Spmi.2000.0882 |
0.387 |
|
| 1999 |
Shiojima K, Woodall JM, Eiting CJ, Grudowski PA, Dupuis RD. Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Journal of Vacuum Science & Technology B. 17: 2030-2033. DOI: 10.1116/1.590866 |
0.405 |
|
| 1999 |
Janes DB, Kolagunta VR, Batistuta M, Walsh BL, Andres RP, Liu J, Dicke J, Lauterbach J, Pletcher T, Chen EH, Melloch MR, Peckham EL, Ueng HJ, Woodall JM, Lee T, et al. Nanoelectronic device applications of a chemically stable GaAs structure Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1773. DOI: 10.1116/1.590824 |
0.41 |
|
| 1999 |
Gopal V, Chen E-, Kvam EP, Woodall JM. Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures Journal of Vacuum Science & Technology B. 17: 1767-1772. DOI: 10.1116/1.590823 |
0.411 |
|
| 1999 |
Chen CH, Hargis M, Woodall JM, Melloch MR, Reynolds JS, Yablonovitch E, Wang W. GHz bandwidth GaAs light-emitting diodes Applied Physics Letters. 74: 3140-3142. DOI: 10.1063/1.124092 |
0.358 |
|
| 1999 |
Lee T, Liu J, Janes DB, Kolagunta VR, Dicke J, Andres RP, Lauterbach J, Melloch MR, McInturff D, Woodall JM, Reifenberger R. An ohmic nanocontact to GaAs Applied Physics Letters. 74: 2869-2871. DOI: 10.1063/1.124041 |
0.37 |
|
| 1999 |
Shiojima K, McInturff DT, Woodall JM, Grudowski PA, Eiting CJ, Dupuis RD. Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p-and n- type GaN Journal of Electronic Materials. 28: 228-233. DOI: 10.1007/S11664-999-0019-9 |
0.353 |
|
| 1999 |
Chaudhuri S, Bagwell PF, McInturff D, Chang JCP, Paak S, Melloch MR, Woodall JM, Pekarek TM, Crooker BC. Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures? Superlattices and Microstructures. 25: 745-755. DOI: 10.1006/Spmi.1999.0758 |
0.39 |
|
| 1999 |
Rizk T, Yulius A, Yoo WI, Bagwell PF, McInturff D, Chin P, Woodall JM, Pekarek TM, Jackson TN. Ballistic transport and Andreev resonances in Nb/In superconducting contacts to InAs and LTG-GaAs Superlattices and Microstructures. 25: 757-766. DOI: 10.1006/Spmi.1999.0757 |
0.404 |
|
| 1998 |
Schoen KJ, Henning JP, Woodall JM, Cooper JA, Melloch MR. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC Ieee Electron Device Letters. 19: 97-99. DOI: 10.1109/55.663526 |
0.337 |
|
| 1998 |
Schoen KJ, Woodall JM, Cooper JA, Melloch MR. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers Ieee Transactions On Electron Devices. 45: 1595-1604. DOI: 10.1109/16.701494 |
0.367 |
|
| 1998 |
Holden T, Sun WD, Pollak FH, Freeouf JL, McInturff D, Woodall JM. Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001) Physical Review B. 58: 7795-7798. DOI: 10.1103/Physrevb.58.7795 |
0.362 |
|
| 1998 |
Gopal V, Kvam EP, Chin TP, Woodall JM. Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface Applied Physics Letters. 72: 2319-2321. DOI: 10.1063/1.121348 |
0.366 |
|
| 1998 |
Leon R, Lobo C, Chin TP, Woodall JM, Fafard S, Ruvimov S, Liliental-Weber Z, Kalceff MAS. Self-forming InAs/GaP quantum dots by direct island growth Applied Physics Letters. 72: 1356-1358. DOI: 10.1063/1.121070 |
0.328 |
|
| 1998 |
Henning JP, Schoen KJ, Melloch MR, Woodall JM, Cooper JA. Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions Journal of Electronic Materials. 27: 296-299. DOI: 10.1007/S11664-998-0403-X |
0.383 |
|
| 1997 |
Gopal V, Chin TP, Vasiliev AL, Woodall JM, Kvam EP. Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface Mrs Proceedings. 500: 63. DOI: 10.1557/Proc-500-63 |
0.3 |
|
| 1997 |
Aboelfotoh MO, Oktyabrsky S, Narayan J, Woodall JM. Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs Journal of Materials Research. 12: 2325-2331. DOI: 10.1557/Jmr.1997.0308 |
0.406 |
|
| 1997 |
Alawadhi H, Vogelgesang R, Ramdas AK, Chin TP, Woodall JM. Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy Journal of Applied Physics. 82: 4331-4337. DOI: 10.1063/1.366241 |
0.318 |
|
| 1997 |
Pekarek TM, Crooker BC, Li S, McElfresh M, Chang JCP, McInturff D, Harmon ES, Melloch MR, Woodall JM. Magnetic And Magnetoresistance Measurements On Iron-Based Nanoclusters In In0.53Ga0.47As Journal of Applied Physics. 81: 4869-4871. DOI: 10.1063/1.364861 |
0.3 |
|
| 1997 |
Ahmed S, Melloch MR, Harmon ES, McInturff DT, Woodall JM. Use of nonstoichiometry to form GaAs tunnel junctions Applied Physics Letters. 71: 3667-3669. DOI: 10.1063/1.120475 |
0.404 |
|
| 1997 |
Schoen KJ, Harmon ES, Woodall JM, Chin TP. High voltage GaInP/GaAs dual-material Schottky rectifiers Applied Physics Letters. 71: 518-520. DOI: 10.1063/1.119596 |
0.392 |
|
| 1997 |
Chen EH, Chin TP, Woodall JM, Lundstrom MS. Electrical characteristics of nearly relaxed InAs/GaP heterojunctions Applied Physics Letters. 70: 1551-1553. DOI: 10.1063/1.118614 |
0.31 |
|
| 1997 |
Holden T, Pollak FH, Freeouf JL, McInturff D, Gray JL, Lundstrom MS, Woodall JM. Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) Applied Physics Letters. 70: 1107-1109. DOI: 10.1063/1.118499 |
0.353 |
|
| 1997 |
Ahmed S, Melloch MR, McInturff DT, Woodall JM, Harmon ES. Low-temperature grown GaAs tunnel junctions Electronics Letters. 33: 1585-1587. DOI: 10.1049/El:19971047 |
0.382 |
|
| 1997 |
Schoen KJ, Woodall JM, Goel A, Venkatraman C. Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC Journal of Electronic Materials. 26: 193-197. DOI: 10.1007/S11664-997-0149-X |
0.336 |
|
| 1996 |
Janes D, Hong S, Kolagunta VR, McInturff D, NG T, Reifenberger R, West S, Woodall J. Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs Mrs Proceedings. 448. DOI: 10.1557/Proc-448-3 |
0.41 |
|
| 1996 |
Chen WL, Chin TP, Woodall JM, Haddad GI. InP/InGaAs single heterojunction bipolar transistors grown by solid‐source molecular beam epitaxy using a phosphorus valved cracker Journal of Vacuum Science & Technology B. 14: 2739-2741. DOI: 10.1116/1.589012 |
0.346 |
|
| 1996 |
Chin TP, Chang JCP, Woodall JM, Chen WL, Haddad GI. InGaP/GaAs/InGaP double‐heterojunction bipolar transistors grown by solid‐source molecular‐beam epitaxy with a valved phosphorus cracker Journal of Vacuum Science & Technology B. 14: 2225-2228. DOI: 10.1116/1.588905 |
0.381 |
|
| 1996 |
Hargis MC, Ralph SE, Woodall J, McInturff D, Negri AS, Haugsjaa PO. Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors Ieee Photonics Technology Letters. 8: 110-112. DOI: 10.1109/68.475795 |
0.316 |
|
| 1996 |
Dodd PE, Lovejoy ML, Lundstrom MS, Melloch MR, Woodall JM, Pettit D. Demonstration of npn InAs bipolar transistors with inverted base doping Ieee Electron Device Letters. 17: 166-168. DOI: 10.1109/55.485162 |
0.36 |
|
| 1996 |
Briner BG, Feenstra RM, Chin TP, Woodall JM. Growth and transport properties of thin Bi films on InP(110) Semiconductor Science and Technology. 11: 1575-1581. DOI: 10.1088/0268-1242/11/11S/021 |
0.362 |
|
| 1996 |
Melloch MR, Nolte DD, Woodall JM, Chang JCP, Janes DB, Harmon ES. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems Critical Reviews in Solid State and Materials Sciences. 21: 189-263. DOI: 10.1080/10408439608241256 |
0.37 |
|
| 1996 |
Lahiri I, Nolte DD, Melloch MR, Woodall JM, Walukiewicz W. Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations Applied Physics Letters. 69: 239-241. DOI: 10.1063/1.117936 |
0.314 |
|
| 1996 |
McInturff DT, Harmon ES, Chang JCP, Pekarek TM, Woodall JM. The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy Applied Physics Letters. 69: 1885-1887. DOI: 10.1063/1.117466 |
0.368 |
|
| 1996 |
Ng T, Janes DB, McInturff D, Woodall JM. Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy Applied Physics Letters. 69: 3551-3553. DOI: 10.1063/1.117242 |
0.361 |
|
| 1996 |
Chang JCP, Chin TP, Woodall JM. Incoherent interface of InAs grown directly on GaP(001) Applied Physics Letters. 69: 981-983. DOI: 10.1063/1.117102 |
0.35 |
|
| 1996 |
Chen EH, McInturff DT, Chin TP, Melloch MR, Woodall JM. Use of annealed low‐temperature grown GaAs as a selective photoetch‐stop layer Applied Physics Letters. 68: 1678-1680. DOI: 10.1063/1.115903 |
0.393 |
|
| 1996 |
Oktyabrsky S, Aboelfotoh MO, Narayan J, Woodall JM. Cu 3 Ge ohmic contacts to n-type GaAs Journal of Electronic Materials. 25: 1662-1672. DOI: 10.1007/S11664-996-0021-4 |
0.387 |
|
| 1995 |
Yan D, Pollak FH, Chin TP, Woodall JM. In situ study of Fermi-level pinning on n- and p-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance. Physical Review. B, Condensed Matter. 52: 4674-4676. PMID 9981631 DOI: 10.1103/Physrevb.52.4674 |
0.312 |
|
| 1995 |
Harmon ES, McInturff DT, Melloch MR, Woodall JM. Novel GaAs photodetector with gain for long wavelength detection Journal of Vacuum Science & Technology B. 13: 768-770. DOI: 10.1116/1.588159 |
0.36 |
|
| 1995 |
Chin TP, Chang JCP, Woodall JM, Chen WL, Haddad GI, Parks C, Ramdas AK. Operation and device applications of a valved‐phosphorus cracker in solid‐source molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 13: 750-753. DOI: 10.1116/1.588154 |
0.374 |
|
| 1995 |
Atique N, Harmon ES, Chang JCP, Woodall JM, Melloch MR, Otsuka N. Electrical and structural properties of Be‐ and Si‐doped low‐temperature‐grown GaAs Journal of Applied Physics. 77: 1471-1476. DOI: 10.1063/1.358895 |
0.405 |
|
| 1995 |
Hong S, Reifenberger R, Janes DB, McInturff D, Woodall JM. Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy Applied Physics Letters. 2258. DOI: 10.1063/1.115877 |
0.401 |
|
| 1995 |
Chang JCP, Woodall JM, Melloch MR, Lahiri I, Nolte DD, Li NY, Tu CW. Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction Applied Physics Letters. 67: 3491. DOI: 10.1063/1.115257 |
0.409 |
|
| 1995 |
Hargis M, Ralph SE, Woodall J, McInturff D. Hole dominated transport in InGaAs metal semiconductor metal photodetectors Applied Physics Letters. 67: 413-415. DOI: 10.1063/1.114646 |
0.314 |
|
| 1995 |
Lahiri I, Nolte DD, Chang JCP, Woodall JM, Melloch MR. The role of excess arsenic in interface mixing in low-temperature-grown AlAs/GaAs superlattices Applied Physics Letters. 67: 1244. DOI: 10.1063/1.114385 |
0.381 |
|
| 1995 |
Lahiri I, Nolte DD, Harmon ES, Melloch MR, Woodall JM. Ultrafast‐lifetime quantum wells with sharp exciton spectra Applied Physics Letters. 66: 2519-2521. DOI: 10.1063/1.113153 |
0.336 |
|
| 1995 |
Cohen EB, Janes DB, Webb KJ, Shenoy JN, Woodall JM, Melloch MR. 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor Superlattices and Microstructures. 17: 345-349. DOI: 10.1006/Spmi.1995.1061 |
0.34 |
|
| 1994 |
Fischer V, Viljoen P, Ristolainen E, Holloway P, Lampert W, Haas T, Woodall J. The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs Mrs Proceedings. 337. DOI: 10.1557/Proc-337-413 |
0.416 |
|
| 1994 |
Feenstra RM, Vaterlaus A, Woodall JM, Collins DA, McGill TC. Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures Mrs Proceedings. 332. DOI: 10.1557/Proc-332-15 |
0.338 |
|
| 1994 |
Chi W, Huang Y, Qiang H, Pollak FH, Pettit DG, Woodall JM. Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well Japanese Journal of Applied Physics. 33: 966-970. DOI: 10.1143/Jjap.33.966 |
0.371 |
|
| 1994 |
Aboelfotoh MO, Oktyabrsky S, Narayan J, Woodall JM. Microstructure characterization of Cu3Ge/n-type GaAs ohmic contacts Journal of Applied Physics. 76: 5760-5763. DOI: 10.1063/1.358386 |
0.424 |
|
| 1994 |
Yan D, Look E, Yin X, Pollak FH, Woodall JM. Air stabilized (001) p-type GaAs fabricated by molecular beam epitaxy with reduced surface state density Applied Physics Letters. 65: 186-188. DOI: 10.1063/1.113035 |
0.388 |
|
| 1994 |
Chang JCP, Otsuka N, Harmon ES, Melloch MR, Woodall JM. Precipitation in Fe‐ or Ni‐implanted and annealed GaAs Applied Physics Letters. 65: 2801-2803. DOI: 10.1063/1.112570 |
0.325 |
|
| 1994 |
Tiwari S, Woodall JM. Experimental comparison of strained quantum‐wire and quantum‐well laser characteristics Applied Physics Letters. 64: 2211-2213. DOI: 10.1063/1.111676 |
0.588 |
|
| 1994 |
Tiwari S, Pettit GD, Milkove KR, Legoues F, Davis RJ, Woodall JM. High efficiency and low threshold current strained V‐groove quantum‐wire lasers Applied Physics Letters. 64: 3536-3538. DOI: 10.1063/1.111264 |
0.596 |
|
| 1994 |
Brillson LJ, Vitomirov I, Raisanen AD, Chang S, Lin CL, McInturff DT, Kirchner PD, Woodall JM. Deep levels and band bending at GaP(100) and (110) surfaces Surface Science. 303-308. DOI: 10.1016/0039-6028(94)90410-3 |
0.357 |
|
| 1994 |
Mahadev V, Melloch MR, Woodall JM, Otsuka N. Effect of dopants on arsenic precipitation in GaAs deposited at low temperatures Journal of Electronic Materials. 23: 1015-1020. DOI: 10.1007/Bf02650369 |
0.401 |
|
| 1993 |
Melloch MR, Otsuka N, Harmon ES, Nolte DD, Woodall JM, McInturff DT. Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures Japanese Journal of Applied Physics. 32: 771. DOI: 10.7567/Jjaps.32S3.771 |
0.314 |
|
| 1993 |
Feenstra RM, Woodall JM, Pettit GD. Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs Materials Science Forum. 1311-1318. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1311 |
0.317 |
|
| 1993 |
Vaterlaus A, Feenstra RM, Kirchner PD, Woodall JM, Pettit GD. Cross‐sectional scanning tunneling microscopy of epitaxial GaAs structures Journal of Vacuum Science & Technology B. 11: 1502-1508. DOI: 10.1116/1.586959 |
0.404 |
|
| 1993 |
Raisanen A, Kirchner PD, Vitomirov IM, Pettit GD, Brillson LJ, Woodall JM. Control of as Diffusion using Ultrathin Metal Passivating Layers at GaAs(100) Surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1106-1113. DOI: 10.1116/1.578449 |
0.4 |
|
| 1993 |
Vitomirov IM, Raisanen A, Brillson LJ, Lin CL, McInturff DT, Kirchner PD, Woodall JM. Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces Journal of Vacuum Science and Technology. 11: 841-847. DOI: 10.1116/1.578315 |
0.363 |
|
| 1993 |
Seabury CW, Farley CW, McDermott BT, Higgins JA, Lin CL, Kirchner PJ, Woodall JM, Gee RC. Base recombination of high performance InGaAs/InP HBT's Ieee Transactions On Electron Devices. 40: 2123-2124. DOI: 10.1109/16.239800 |
0.317 |
|
| 1993 |
Woodall JM, Kirchner PD, Freeouf JL, McInturff DT, Melloch MR, Pollak FH. The Continuing Drama of the Semiconductor Interface Philosophical Transactions of the Royal Society A. 344: 521-532. DOI: 10.1098/Rsta.1993.0105 |
0.383 |
|
| 1993 |
Chen JH, Chi WS, Huang YS, Yin Y, Pollak FH, Pettit GD, Woodall JM. Photomodulation study of partially strained InxGa1-xAs layers Semiconductor Science and Technology. 8: 1420-1425. DOI: 10.1088/0268-1242/8/7/036 |
0.321 |
|
| 1993 |
Melloch MR, Mahalingam K, Otsuka N, Woodall JM, Warren AC. Comment on arsenic precipitate coarsening in GaAs epilayers Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 67: 1495-1496. DOI: 10.1080/01418619308225369 |
0.341 |
|
| 1993 |
Harmon ES, Melloch MR, Woodall JM, Nolte DD, Otsuka N, Chang CL. Carrier lifetime versus anneal in low temperature growth GaAs Applied Physics Letters. 63: 2248-2250. DOI: 10.1063/1.110542 |
0.38 |
|
| 1993 |
Feenstra RM, Vaterlaus A, Woodall JM, Pettit GD. Tunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs Applied Physics Letters. 63: 2528-2530. DOI: 10.1063/1.110448 |
0.377 |
|
| 1993 |
Harmon ES, Lovejoy ML, Melloch MR, Lundstrom MS, De Lyon TJ, Woodall JM. Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs Applied Physics Letters. 63: 536-538. DOI: 10.1063/1.109997 |
0.338 |
|
| 1993 |
McInturff DT, Woodall JM, Warren AC, Braslau N, Pettit GD, Kirchner PD, Melloch MR. Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes Applied Physics Letters. 62: 2367-2368. DOI: 10.1063/1.109392 |
0.39 |
|
| 1993 |
Kavanagh KL, Chang JCP, Kirchner PD, Warren AC, Woodall JM. Si diffusion and segregation in low-temperature grown GaAs Applied Physics Letters. 62: 286-288. DOI: 10.1063/1.108992 |
0.389 |
|
| 1993 |
Nolte DD, Melloch MR, Woodall JM, Ralph SJ. Enhanced electro‐optic properties of low‐temperature‐growth GaAs and AlGaAs Applied Physics Letters. 62: 1356-1358. DOI: 10.1063/1.108677 |
0.354 |
|
| 1993 |
Melloch MR, Woodall JM, Otsuka N, Mahalingam K, Chang CL, Nolte DD. GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites Materials Science and Engineering B. 22: 31-36. DOI: 10.1016/0921-5107(93)90219-D |
0.327 |
|
| 1993 |
Brillson LJ, Vitomirov IM, Raisanen A, Chang S, Viturro RE, Kirchner PD, Pettit GD, Woodall JM. Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies Applied Surface Science. 667-675. DOI: 10.1016/0169-4332(93)90737-V |
0.385 |
|
| 1993 |
Yin X, Guo X, Pollak FH, Pettit GD, McInturff DT, Woodall JM, Cirlin E. Contactless electromodulation for in situ characterization of semiconductor processing Applied Surface Science. 63: 163-166. DOI: 10.1016/0169-4332(93)90082-M |
0.355 |
|
| 1993 |
Kirchner PD, Vaterlaus A, Feenstra RM, Lin C, Pettit GD, Woodall JM. Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy Journal of Crystal Growth. 127: 1030-1031. DOI: 10.1016/0022-0248(93)90783-S |
0.326 |
|
| 1993 |
Melloch MR, Chang CL, Otsuka N, Mahalingam K, Woodall JM, Kirchner PD. Two-dimensional arsenic-precipitate structures in GaAs Journal of Crystal Growth. 127: 499-502. DOI: 10.1016/0022-0248(93)90669-N |
0.388 |
|
| 1993 |
Matyi RJ, Melloch MR, Woodall JM. Structural analysis of as-deposited and annealed low-temperature gallium arsenide Journal of Crystal Growth. 129: 719-727. DOI: 10.1016/0022-0248(93)90508-T |
0.401 |
|
| 1993 |
Vitomirov IM, Raisanen A, Chang S, Viturro RE, Rioux DF, Kirchner PD, Pettit GD, Woodall JM. Effect of semiconductor growth method and bulk doping on Fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100) Journal of Electronic Materials. 22: 111-117. DOI: 10.1007/Bf02665732 |
0.427 |
|
| 1993 |
Vitomirov IM, Raisanen A, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Processing and reconstruction effects on Al-GaAs(100) barrier heights Journal of Electronic Materials. 22: 309-313. DOI: 10.1007/Bf02661382 |
0.412 |
|
| 1993 |
Chang CL, Mahalingam K, Otsuka N, Melloch MR, Woodall JM. Precipitation of arsenic in doped GaAs Journal of Electronic Materials. 22: 1413-1416. DOI: 10.1007/Bf02649988 |
0.363 |
|
| 1992 |
Warren AC, Woodall JM, Kirchner PD, Yin X, Pollak F, Melloch MR, Otsuka N, Mahalingam K. Role of excess As in low-temperature-grown GaAs. Physical Review. B, Condensed Matter. 46: 4617-4620. PMID 10004217 DOI: 10.1103/Physrevb.46.4617 |
0.393 |
|
| 1992 |
Chang S, Vitomirov IM, Brillson LJ, Mailhiot C, Rioux DF, Kime YJ, Kirchner PD, Pettit GD, Woodall JM. Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces Physical Review B. 45: 13438-13451. PMID 10001430 DOI: 10.1103/Physrevb.45.13438 |
0.393 |
|
| 1992 |
Brillson LJ, Vitomirov IM, Raisanen A, Chang S, Viturro RE, Kirchner PD, Pettit GD, Woodall JM. Process-Dependent Electronic Structure at Metallized GaAs Contacts Mrs Proceedings. 260. DOI: 10.1557/Proc-260-449 |
0.3 |
|
| 1992 |
Qiang H, Huang YS, Pollak FH, Pettit GD, Woodall JM. Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well Semiconductors. 1678: 177-188. DOI: 10.1117/12.60453 |
0.343 |
|
| 1992 |
Yin X, Guo X, Pollak FH, Pettit GD, Woodall JM, Cirlin E. Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique Semiconductors. 1678: 168-176. DOI: 10.1117/12.60452 |
0.393 |
|
| 1992 |
Warren AC, Woodall JM, Kirchner PD, Yin X, Guo X, Pollak FH, Melloch MR. Electromodulation study of GaAs with excess arsenic Journal of Vacuum Science & Technology B. 10: 1904-1907. DOI: 10.1116/1.586220 |
0.4 |
|
| 1992 |
Vitomirov IM, Raisanen AD, Finnefrock AC, Viturro RE, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces Journal of Vacuum Science & Technology B. 10: 1898-1903. DOI: 10.1116/1.586219 |
0.321 |
|
| 1992 |
Chang S, Raisanen A, Brillson LJ, Shaw JL, Kirchner PD, Pettit GD, Woodall JM. Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements Journal of Vacuum Science & Technology B. 10: 1932-1939. DOI: 10.1116/1.586161 |
0.391 |
|
| 1992 |
Mahalingam K, Otsuka N, Melloch MR, Woodall JM, Warren AC. Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy Journal of Vacuum Science & Technology B. 10: 812-814. DOI: 10.1116/1.586122 |
0.375 |
|
| 1992 |
Vitomirov IM, Raisanen AD, Finnefrock AC, Viturro RE, Chang S, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions Journal of Vacuum Science and Technology. 10: 749-753. DOI: 10.1116/1.578157 |
0.36 |
|
| 1992 |
Yin X, Chen H, Pollak FH, Chan Y, Montano PA, Kirchner PD, Pettit GD, Woodall JM. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 131-136. DOI: 10.1116/1.578125 |
0.324 |
|
| 1992 |
Gee RC, Chin T-, Tu CW, Asbeck PM, Lin CL, Kirchner PD, Woodall JM. InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base Ieee Electron Device Letters. 13: 247-249. DOI: 10.1109/55.145042 |
0.32 |
|
| 1992 |
Melloch MR, Nolte DD, Woodall JM, Ralphe SE. High-density optical storage using arsenic nanoclusters in GaAs and AlGaAs Ieee Transactions On Electron Devices. 39: 2654-2655. DOI: 10.1109/16.163514 |
0.348 |
|
| 1992 |
Melloch MR, Otsuka N, Mahalingam K, Chang CL, Woodall JM, Pettit GD, Kirchner PD, Cardone F, Warren AC, Nolte DD. Arsenic cluster dynamics in doped GaAs Journal of Applied Physics. 72: 3509-3513. DOI: 10.1063/1.352326 |
0.415 |
|
| 1992 |
Yan D, Pollak FH, Boccio VT, Lin CL, Kirchner PD, Woodall JM, Gee RC, Asbeck PM. Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure Applied Physics Letters. 61: 2066-2068. DOI: 10.1063/1.108308 |
0.384 |
|
| 1992 |
Nolte DD, Melloch MR, Ralph SJ, Woodall JM. High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs Applied Physics Letters. 61: 3098-3100. DOI: 10.1063/1.107973 |
0.311 |
|
| 1992 |
Feenstra RM, Yu ET, Woodall JM, Kirchner PD, Lin CL, Pettit GD. Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy Applied Physics Letters. 61: 795-797. DOI: 10.1063/1.107804 |
0.322 |
|
| 1992 |
Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, De Lyon TJ, Woodall JM. Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon Applied Physics Letters. 61: 822-824. DOI: 10.1063/1.107756 |
0.35 |
|
| 1992 |
Yin X, Guo X, Pollak FH, Pettit GD, Woodall JM, Chin TP, Tu CW. Nature of band bending at semiconductor surfaces by contactless electroreflectance Applied Physics Letters. 60: 1336-1338. DOI: 10.1063/1.107335 |
0.383 |
|
| 1992 |
Matyi RJ, Melloch MR, Woodall JM. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide Applied Physics Letters. 60: 2642-2644. DOI: 10.1063/1.106881 |
0.395 |
|
| 1992 |
Viturro RE, Melloch MR, Woodall JM. Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy Applied Physics Letters. 60: 3007-3009. DOI: 10.1063/1.106791 |
0.414 |
|
| 1992 |
Mahalingam K, Otsuka N, Melloch MR, Woodall JM. Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures Applied Physics Letters. 60: 3253-3255. DOI: 10.1063/1.106710 |
0.385 |
|
| 1992 |
Qiang H, Pollak FH, Mailhiot C, Pettit GD, Woodall JM. Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well Surface Science. 267: 103-106. DOI: 10.1016/0039-6028(92)91099-W |
0.321 |
|
| 1991 |
Hang Z, Yan D, Pollak FH, Pettit GD, Woodall JM. Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15). Physical Review. B, Condensed Matter. 44: 10546-10550. PMID 9999079 DOI: 10.1103/Physrevb.44.10546 |
0.309 |
|
| 1991 |
Viturro RE, Melloch MR, Woodall JM. Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs Mrs Proceedings. 241. DOI: 10.1557/Proc-241-81 |
0.411 |
|
| 1991 |
Warren AC, Woodall JM, Burroughes JH, Kirchner PD, Heinrich HK, Arjavalingam G, Katzenellenbogen N, Grischkowsky D, Melloch MR, Otsuka N, Mahalingam K, Pollak FH, Yin X. The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) Mrs Proceedings. 241: 15. DOI: 10.1557/Proc-241-15 |
0.304 |
|
| 1991 |
Melloch MR, Otsuka N, Mahalingam K, Warrew AC, Woodall JM, Kirchner PD. Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam Epitaxy Mrs Proceedings. 241. DOI: 10.1557/Proc-241-113 |
0.356 |
|
| 1991 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM. Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces Journal of Vacuum Science & Technology B. 9: 2129-2134. DOI: 10.1116/1.585751 |
0.407 |
|
| 1991 |
Mahalingam K, Otsuka N, Melloch MR, Woodall JM, Warren AC. Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2328-2332. DOI: 10.1116/1.585742 |
0.391 |
|
| 1991 |
Freeouf JL, Warren AC, Kirchner PD, Woodall JM, Melloch MR. Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2355-2357. DOI: 10.1116/1.585703 |
0.389 |
|
| 1991 |
Lyon TJd, Woodall JM, Kirchner PD, McInturff DT, Scilla GJ, Cardone F. Carbon doping of GaP, GaInP, and AlInP in metalorganic molecular beam epitaxy using methyl and ethyl precursors Journal of Vacuum Science & Technology B. 9: 136-142. DOI: 10.1116/1.585275 |
0.357 |
|
| 1991 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM. Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces Journal of Vacuum Science and Technology. 9: 902-906. DOI: 10.1116/1.577338 |
0.33 |
|
| 1991 |
Huang YS, Qiang H, Pollak FH, Pettit GD, Kirchner PD, Woodall JM, Stragier H, Sorensen LB. Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well Journal of Applied Physics. 70: 7537-7542. DOI: 10.1063/1.349706 |
0.368 |
|
| 1991 |
Silberman JA, Lyon TJd, Woodall JM. Fermi level pinning at epitaxial Si on GaAs(100) interfaces Applied Physics Letters. 59: 3300-3302. DOI: 10.1063/1.105712 |
0.413 |
|
| 1991 |
Warren AC, Katzenellenbogen N, Grischkowsky D, Woodall JM, Melloch MR, Otsuka N. Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers Applied Physics Letters. 58: 1512-1514. DOI: 10.1063/1.105162 |
0.308 |
|
| 1991 |
Woodall JM, Hodgson RT, Gunshor RL. Low-resistivity p-type ZnSe through surface Fermi level engineering Applied Physics Letters. 58: 379-381. DOI: 10.1063/1.104640 |
0.38 |
|
| 1991 |
Lyon TJd, Buchan NI, Kirchner PD, Woodall JM, McInturff DT, Scilla GJ, Cardone F. Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP Journal of Crystal Growth. 111: 564-569. DOI: 10.1016/0022-0248(91)91040-H |
0.356 |
|
| 1991 |
Melloch MR, Mahalingam K, Otsuka N, Woodall JM, Warren AC. GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates Journal of Crystal Growth. 111: 39-42. DOI: 10.1016/0022-0248(91)90943-Y |
0.399 |
|
| 1990 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM, Hecht MH. Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy. Physical Review. B, Condensed Matter. 41: 12299-12302. PMID 9993693 DOI: 10.1103/Physrevb.41.12299 |
0.371 |
|
| 1990 |
Chang S, Brillson LJ, Rioux DF, Kime YJ, Kirchner PD, Pettit GD, Woodall JM. Metal/GaAs interface chemical and electronic properties: GaAs orientation dependence Journal of Vacuum Science & Technology B. 8: 1008-1013. DOI: 10.1116/1.585021 |
0.407 |
|
| 1990 |
Freeouf JL, Buchanan DA, Wright SL, Jackson TN, Batey J, Robinson B, Callegari A, Paccagnella A, Woodall JM. Studies of GaAs–oxide interfaces with and without Si interlayer Journal of Vacuum Science & Technology B. 8: 860-866. DOI: 10.1116/1.584979 |
0.332 |
|
| 1990 |
Rossi DV, Fossum ER, Kirchner PD, Woodall JM. Transport properties and applications of unstrained In0.75Ga0.25As/Al0.6Ga0.4As heterojunctions Journal of Vacuum Science & Technology B. 8: 779-782. DOI: 10.1116/1.584965 |
0.357 |
|
| 1990 |
Chang S, Shaw JL, Viturro RE, Brillson LJ, Kirchner PD, Woodall JM. Temperature-dependent formation of interfacé states and Schottky barriers at metal/molecular-beam epitaxy GaAs(100) junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3803-3808. DOI: 10.1116/1.576497 |
0.404 |
|
| 1990 |
Liliental-Weber Z, Wilmsen CW, Geib KM, Kirchner PD, Baker JM, Woodall JM. Structure and chemical composition of water-grown oxides of GaAs Journal of Applied Physics. 67: 1863-1867. DOI: 10.1063/1.345614 |
0.311 |
|
| 1990 |
Kleinsasser AW, Jackson TN, McInturff D, Rammo F, Pettit GD, Woodall JM. Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts Applied Physics Letters. 57: 1811-1813. DOI: 10.1063/1.104029 |
0.348 |
|
| 1990 |
Warren AC, Woodall JM, Freeouf JL, Grischkowsky D, McInturff DT, Melloch MR, Otsuka N. Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy Applied Physics Letters. 57: 1331-1333. DOI: 10.1063/1.103474 |
0.409 |
|
| 1990 |
Kuchta D, Whinnery JR, Smith JS, Woodall JM, Pettit D. Improved contacts to semi‐insulating GaAs photoconductive switches using a graded layer of InGaAs Applied Physics Letters. 57: 1534-1536. DOI: 10.1063/1.103344 |
0.353 |
|
| 1990 |
Melloch MR, Otsuka N, Woodall JM, Warren AC, Freeouf JL. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures Applied Physics Letters. 57: 1531-1533. DOI: 10.1063/1.103343 |
0.391 |
|
| 1990 |
de Lyon TJ, Kash JA, Tiwari S, Woodall JM, Yan D, Pollak FH. Low surface recombination velocity and contact resistance usingp+/pcarbon‐doped GaAs structures Applied Physics Letters. 56: 2442-2444. DOI: 10.1063/1.102903 |
0.635 |
|
| 1990 |
Freeouf JL, Woodall JM, Brillson LJ, Viturro RE. Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure Applied Physics Letters. 56: 69-71. DOI: 10.1063/1.102654 |
0.367 |
|
| 1990 |
De Lyon TJ, Woodall JM, Goorsky MS, Kirchner PD. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy Applied Physics Letters. 56: 1040-1042. DOI: 10.1063/1.102608 |
0.304 |
|
| 1990 |
Woodall JM, Hovel HJ. An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAsGaAs solar cells☆ Solar Cells. 29: 173-177. DOI: 10.1016/0379-6787(90)90025-Z |
0.377 |
|
| 1990 |
Woodall JM, Hovel HJ. High-efficiency Ga1-xAlxAs-GaAs solar cells Solar Cells. 29: 167-172. DOI: 10.1016/0379-6787(90)90024-Y |
0.391 |
|
| 1990 |
Woodall JM, Kirchner PD, Freeouf JL, Warren AC. The electronic properties and control of semiconductor interfaces Corrosion Science. 31: 53-58. DOI: 10.1016/0010-938X(90)90090-R |
0.334 |
|
| 1990 |
Shen H, Pollak FH, Woodall JM, Sacks RN. Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates Journal of Electronic Materials. 19: 283-286. DOI: 10.1007/Bf02733820 |
0.44 |
|
| 1989 |
Viturro RE, Chang S, Shaw JL, Mailhiot C, Brillson LJ, Terrasi A, Hwu Y, Margaritondo G, Kirchner PD, Woodall JM. Low‐temperature formation of metal/molecular‐beam epitaxy‐GaAs(100) interfaces: Approaching ideal chemical and electronic limits Journal of Vacuum Science & Technology B. 7: 1007-1012. DOI: 10.1116/1.584791 |
0.376 |
|
| 1989 |
Shen H, Pollak FH, Woodall JM, Sacks RN. Electric field distributions in a molecular‐beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance Journal of Vacuum Science & Technology B. 7: 804-806. DOI: 10.1116/1.584604 |
0.41 |
|
| 1989 |
Viturro RE, Mailhiot C, Shaw JL, Brillson LJ, LaGraffe D, Margaritondo G, Pettit GD, Woodall JM. Interface states and Schottky barrier formation at metal/GaAs junctions Journal of Vacuum Science and Technology. 7: 855-860. DOI: 10.1116/1.575810 |
0.351 |
|
| 1989 |
Kleinsasser AW, Jackson TN, McInturff D, Pettit GD, Rammo F, Woodall JM. InGaAs superconducting JFETs with Nb electrodes Ieee Transactions On Electron Devices. 36: 2628. DOI: 10.1109/16.43757 |
0.351 |
|
| 1989 |
Fitzgerald EA, Watson GP, Proano RE, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Journal of Applied Physics. 65: 2220-2237. DOI: 10.1063/1.342834 |
0.562 |
|
| 1989 |
Kleinsasser AW, Jackson TN, McInturff D, Rammo F, Pettit GD, Woodall JM. Superconducting InGaAs junction field‐effect transistors with Nb electrodes Applied Physics Letters. 55: 1909-1911. DOI: 10.1063/1.102166 |
0.337 |
|
| 1989 |
Wie CR, Burns G, Dacol FH, Pettit GD, Woodall JM. X-ray and Raman studies of MeV ion-bombarded GaInAs/GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 43: 560-564. DOI: 10.1016/0168-583X(89)90406-0 |
0.302 |
|
| 1988 |
Woodall JM. Semiconductor Device research Using Non-Lattice Matched Structures Mrs Proceedings. 126. DOI: 10.1557/Proc-126-3 |
0.357 |
|
| 1988 |
Wilmsen CW, Kirchner PD, Baker JM, McInturff DT, Pettit GD, Woodall JM. Characterization of photochemically unpinned GaAs Journal of Vacuum Science & Technology B. 6: 1180-1183. DOI: 10.1116/1.584275 |
0.319 |
|
| 1988 |
Brillson LJ, Viturro RE, Mailhiot C, Shaw JL, Tache N, McKinley J, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Unpinned Schottky barrier formation at metal–GaAs interfaces Journal of Vacuum Science & Technology B. 6: 1263-1269. DOI: 10.1116/1.584247 |
0.379 |
|
| 1988 |
Viturro RE, Shaw JL, Brillson LJ, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Arsenic‐ and metal‐induced GaAs interface states by low‐energy cathodoluminescence spectroscopy Journal of Vacuum Science & Technology B. 6: 1397-1402. DOI: 10.1116/1.584229 |
0.372 |
|
| 1988 |
Pashley MD, Haberern KW, Woodall JM. The (001) surface of molecular‐beam epitaxially grown GaAs studied by scanning tunneling microscopy Journal of Vacuum Science & Technology B. 6: 1468-1471. DOI: 10.1116/1.584198 |
0.331 |
|
| 1988 |
Shen H, Hang Z, Pan SH, Pollak FH, Woodall JM. Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency Applied Physics Letters. 52: 2058-2060. DOI: 10.1063/1.99580 |
0.334 |
|
| 1988 |
Viturro RE, Shaw JL, Mailhiot C, Brillson LJ, Tache N, McKinley J, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Band bending and interface states for metals on GaAs Applied Physics Letters. 52: 2052-2054. DOI: 10.1063/1.99578 |
0.397 |
|
| 1988 |
Fitzgerald EA, Kirchner PD, Proano R, Pettit GD, Woodall JM, Ast DG. Elimination of interface defects in mismatched epilayers by a reduction in growth area Applied Physics Letters. 52: 1496-1498. DOI: 10.1063/1.99110 |
0.561 |
|
| 1988 |
Wilmsen CW, Kirchner PD, Woodall JM. Effects of N2, O2, and H2O on GaAs passivated by photowashing or coating with Na2S⋅9H2O Journal of Applied Physics. 64: 3287-3289. DOI: 10.1063/1.341519 |
0.329 |
|
| 1988 |
Kavanagh KL, Capano MA, Hobbs LW, Barbour JC, Marée PMJ, Schaff W, Mayer JW, Pettit D, Woodall JM, Stroscio JA, Feenstra RM. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers Journal of Applied Physics. 64: 4843-4852. DOI: 10.1063/1.341232 |
0.354 |
|
| 1988 |
Fitzgerald EA, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Structure and recombination in InGaAs/GaAs heterostructures Journal of Applied Physics. 63: 693-703. DOI: 10.1063/1.340059 |
0.567 |
|
| 1988 |
Shen H, Pan SH, Hang Z, Leng J, Pollak FH, Woodall JM, Sacks RN. Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C Applied Physics Letters. 53: 1080-1082. DOI: 10.1063/1.100027 |
0.351 |
|
| 1988 |
Blom GM, Woodall JM. Effect of iso-electronic dopants on the dislocation density of GaAs Journal of Electronic Materials. 17: 391-396. DOI: 10.1007/Bf02652124 |
0.399 |
|
| 1987 |
Rossi DV, Fossum ER, Pettit GD, Kirchner PD, Woodall JM. Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer Journal of Vacuum Science & Technology B. 5: 982-984. DOI: 10.1116/1.583830 |
0.369 |
|
| 1987 |
Kleinsasser A, Jackson T, Pettit G, Schmid H, Woodall J, Kern D. Semiconductor heterostructure weak links for Josephson and superconducting FET applications Ieee Transactions On Magnetics. 23: 703-706. DOI: 10.1109/Tmag.1987.1065138 |
0.374 |
|
| 1987 |
Davidson A, Brady M, Frank D, Woodall J, Kleinsasser A. Transport properties of a superconductor-semiconductor ohmic contact Ieee Transactions On Magnetics. 23: 727-730. DOI: 10.1109/Tmag.1987.1064899 |
0.387 |
|
| 1987 |
Warren AC, Woodall JM, Fossum ER, Pettit GD, Kirchner PD, McInturff DT. Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors Applied Physics Letters. 51: 1818-1820. DOI: 10.1063/1.98994 |
0.393 |
|
| 1987 |
Batson PE, Kavanagh KL, Wong CY, Woodall JM. Local bonding and electronic structure obtained from electron energy loss scattering Ultramicroscopy. 22: 89-101. DOI: 10.1016/0304-3991(87)90053-2 |
0.34 |
|
| 1986 |
Batson PE, Kavanagh KL, Woodall JM, Mayer JW. Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface. Physical Review Letters. 57: 2729-2732. PMID 10033846 DOI: 10.1103/Physrevlett.57.2729 |
0.302 |
|
| 1986 |
Brillson LJ, Slade ML, Viturro RE, Kelly MK, Tache N, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Fermi level pinning and chemical interactions at metal–InxGa1−xAs(100) interfaces Journal of Vacuum Science & Technology B. 4: 919-923. DOI: 10.1116/1.583537 |
0.346 |
|
| 1986 |
Kleinsasser AW, Jackson TN, Pettit GD, Schmidt H, Kern DP, Woodall JM. VB-8 heterostructure semiconductor-superconductor weak links Ieee Transactions On Electron Devices. 33: 1861-1862. DOI: 10.1109/T-Ed.1986.22820 |
0.32 |
|
| 1986 |
Kleinsasser AW, Jackson TN, Pettit GD, Schmid H, Woodall JM, Kern DP. n‐InAs/GaAs heterostructure superconducting weak links with Nb electrodes Applied Physics Letters. 49: 1741-1743. DOI: 10.1063/1.97233 |
0.377 |
|
| 1986 |
Brillson LJ, Slade ML, Viturro RE, Kelly MK, Tache N, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces Applied Physics Letters. 48: 1458-1460. DOI: 10.1063/1.97027 |
0.356 |
|
| 1986 |
Offsey SD, Woodall JM, Warren AC, Kirchner PD, Chappell TI, Pettit GD. Unpinned (100) GaAs surfaces in air using photochemistry Applied Physics Letters. 48: 475-477. DOI: 10.1063/1.96535 |
0.357 |
|
| 1986 |
Woodall JM, Kirchner PD, Pettit GD, Rosenberg JJ. Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility Surface Science Letters. 174: 399-400. DOI: 10.1016/0167-2584(86)90069-1 |
0.313 |
|
| 1986 |
Freeouf JL, Woodall JM. Defective Heterojunction Models Surface Science Letters. 168: 518-530. DOI: 10.1016/0039-6028(86)90881-2 |
0.369 |
|
| 1986 |
KAVANAGH KL, MAYER JW, MAGEE CW, SHEETS J, TONG J, KIRCHNER PD, WOODALL JM, HALLER I. ChemInform Abstract: The Polycrystalline-Si Contact to GaAs. Chemischer Informationsdienst. 17. DOI: 10.1002/Chin.198640331 |
0.335 |
|
| 1985 |
Kleinsasser AW, Woodall JM, Pettit GD, Jackson TN, Tang JY‐, Kirchner PD. n+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level Journal of Vacuum Science & Technology B. 3: 1274-1279. DOI: 10.1116/1.583011 |
0.359 |
|
| 1985 |
Kirchner PD, Jackson TN, Pettit GD, Woodall JM. Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs Applied Physics Letters. 47: 26-28. DOI: 10.1063/1.96391 |
0.386 |
|
| 1985 |
Kavanagh KL, Mayer JW, Magee CW, Sheets J, Tong J, Woodall JM. Silicon diffusion at polycrystalline‐Si/GaAs interfaces Applied Physics Letters. 47: 1208-1210. DOI: 10.1063/1.96330 |
0.369 |
|
| 1985 |
Kleinsasser AW, Woodall JM, Pettit GD, Jackson TN, Tang JY‐, Kirchner PD. Controlled low barrier height n+‐InGaAs/n‐GaAs pseudomorphic heterojunction Schottky diodes Applied Physics Letters. 46: 1168-1170. DOI: 10.1063/1.95747 |
0.4 |
|
| 1984 |
Pettit GD, Woodall JM, Wright SL, Kirchner PD, Freeouf JL. Summary Abstract: The MBE growth of GaAs free of oval defects Journal of Vacuum Science & Technology B. 2: 241-242. DOI: 10.1116/1.582794 |
0.305 |
|
| 1984 |
Bond AH, Parayanthal P, Pollak FH, Woodall JM. Direct measurement of proton straggling in GaAlAs for nuclear profiling Journal of Applied Physics. 55: 3433-3436. DOI: 10.1063/1.333359 |
0.39 |
|
| 1984 |
Hoffmann HJ, Woodall JM. Photo-enhanced etching ofn-Si Applied Physics A. 33: 243-245. DOI: 10.1007/Bf00614665 |
0.358 |
|
| 1983 |
Oelhafen P, Freeouf JL, Pettit GD, Woodall JM. Elevated temperature low energy ion cleaning of GaAs Journal of Vacuum Science & Technology B. 1: 787-790. DOI: 10.1116/1.582693 |
0.322 |
|
| 1983 |
Woodall JM, Oelhafen P, Jackson TN, Freeouf JL, Pettit GD. Photoelectrochemical passivation of GaAs surfaces Journal of Vacuum Science & Technology B. 1: 795-798. DOI: 10.1116/1.582680 |
0.404 |
|
| 1983 |
Kirchner PD, Woodall JM, Wright S. IVA-7 a new high purity Si doping source for MBE grown GaAs devices Ieee Transactions On Electron Devices. 30: 1590-1590. DOI: 10.1109/T-Ed.1983.21380 |
0.367 |
|
| 1983 |
Woodall JM, Pettit GD, Jackson TN, Lanza C, Kavanagh KL, Mayer JW. Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces Physical Review Letters. 51: 1783-1786. DOI: 10.1103/Physrevlett.51.1783 |
0.344 |
|
| 1983 |
Nathan MI, Jackson TN, Kirchner PD, Mendez EE, Pettit GD, Woodall JM. Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions Journal of Electronic Materials. 12: 719-725. DOI: 10.1007/Bf02676799 |
0.37 |
|
| 1982 |
Freeouf JL, Jackson TN, Laux SE, Woodall JM. Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts Journal of Vacuum Science and Technology. 21: 570-573. DOI: 10.1116/1.571765 |
0.314 |
|
| 1982 |
Parayanthal P, Pollak FH, Woodall JM. Raman scattering characterization of Ga1-xAlxAs/GaAs heterojunctions: Epilayer and interface Applied Physics Letters. 41: 961-963. DOI: 10.1063/1.93356 |
0.367 |
|
| 1982 |
Shealy JR, Woodall JM. A new technique for gettering oxygen and moisture from gases used in semiconductor processing Applied Physics Letters. 41: 88-90. DOI: 10.1063/1.93299 |
0.556 |
|
| 1982 |
Freeouf JL, Jackson TN, Laux SE, Woodall JM. Effective barrier heights of mixed phase contacts: Size effects Applied Physics Letters. 40: 634-636. DOI: 10.1063/1.93171 |
0.331 |
|
| 1981 |
Woodall JM, Freeouf JL. GaAs metallization: Some problems and trends Journal of Vacuum Science and Technology. 19: 794-798. DOI: 10.1116/1.571150 |
0.356 |
|
| 1981 |
Kirchner PD, Woodall JM, Freeouf JL, Wolford DJ, Pettit GD. VOLATILE METAL OXIDE INCORPORATION IN LAYERS OF GaAs AND Ga//1// minus //xAl//xAs GROWN BY MOLECULAR BEAM EPITAXY Journal of Vacuum Science &Amp; Technology. 19: 604-606. DOI: 10.1116/1.571138 |
0.361 |
|
| 1981 |
Woodall JM, Freeouf JL, Pettit GD, Jackson T, Kirchner P. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy Journal of Vacuum Science and Technology. 19: 626-627. DOI: 10.1116/1.571074 |
0.401 |
|
| 1981 |
Woodall JM, Rupprecht H, Chicotka RJ, Wicks G. Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source Applied Physics Letters. 38: 639-641. DOI: 10.1063/1.92462 |
0.578 |
|
| 1981 |
Hoffmann HJ, Woodall JM, Chappell TI. Voltage‐controlled photoetching of GaAs Applied Physics Letters. 38: 564-566. DOI: 10.1063/1.92414 |
0.33 |
|
| 1980 |
Woodall JM. III-V Compounds and Alloys: An Update Science. 208: 908-915. PMID 17772816 DOI: 10.1126/Science.208.4446.908 |
0.35 |
|
| 1979 |
Woodall JM, Pettit GD, Chappell T, Hovel HJ. Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions Journal of Vacuum Science and Technology. 16: 1389-1393. DOI: 10.1116/1.570206 |
0.388 |
|
| 1979 |
Pettit GD, Woodall JM, Hovel HJ. Photoluminescent characterization of GaAs solar cells Applied Physics Letters. 35: 335-337. DOI: 10.1063/1.91112 |
0.339 |
|
| 1979 |
Olowolafe JO, Ho PS, Hovel HJ, Lewis JE, Woodall JM. Contact reactions in Pd/GaAs junctions Journal of Applied Physics. 50: 955-962. DOI: 10.1063/1.326018 |
0.331 |
|
| 1978 |
Pettit GD, Cuomo JJ, DiStefano TH, Woodall JM. Solar absorbing surfaces of anodized dendritic tungsten Ibm Journal of Research and Development. 22: 372-377. DOI: 10.1147/Rd.224.0372 |
0.312 |
|
| 1977 |
Tomkiewicz M, Woodall JM. Photoelectrolysis of Water with Semiconductor Materials Journal of the Electrochemical Society. 124: 1436-1440. DOI: 10.1149/1.2133669 |
0.352 |
|
| 1977 |
Woodall JM, Hovel HJ. An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells Applied Physics Letters. 30: 492-493. DOI: 10.1063/1.89461 |
0.344 |
|
| 1977 |
Woodall JM, Hovel HJ. LPE growth of GaAs- Ga 1- x Al x As solar cells Journal of Crystal Growth. 39: 108-116. DOI: 10.1016/0022-0248(77)90158-0 |
0.398 |
|
| 1975 |
Woodall JM, Hovel HJ. Outlooks for GaAs terrestrial photovoltaics Journal of Vacuum Science and Technology. 12: 1000-1009. DOI: 10.1116/1.568711 |
0.311 |
|
| 1975 |
Hovel HJ, Woodall JM. Technique for producing ’’good’’ GaAs solar cells using poor‐quality substrates Applied Physics Letters. 27: 447-449. DOI: 10.1063/1.88512 |
0.351 |
|
| 1975 |
Cuomo JJ, Ziegler JF, Woodall JM. A new concept for solar energy thermal conversion Applied Physics Letters. 26: 557-559. DOI: 10.1063/1.87990 |
0.333 |
|
| 1974 |
Stern F, Woodall JM. Photon recycling in semiconductor lasers Journal of Applied Physics. 45: 3904-3906. DOI: 10.1063/1.1663884 |
0.318 |
|
| 1972 |
Woodall JM, Hovel HJ. High‐efficiency Ga1−xAlxAs–GaAs solar cells Applied Physics Letters. 21: 379-381. DOI: 10.1063/1.1654421 |
0.379 |
|
| 1972 |
Woodall JM, Potemski RM, Blum SE, Lynch R. Ga/1-x/Al/x/As LED structures grown on GaP substrates. Applied Physics Letters. 20: 375-377. DOI: 10.1063/1.1653981 |
0.393 |
|
| 1972 |
Dumke WP, Woodall JM, Rideout VL. GaAsGaAlAs heterojunction transistor for high frequency operation Solid-State Electronics. 15: 1339-1343. DOI: 10.1016/0038-1101(72)90127-X |
0.382 |
|
| 1968 |
Rupprecht H, Woodall J, Pettit G, Crowe J, Quinn H. Stimulated emission from Ga 1-x Al x As diodes at 77°K Ieee Journal of Quantum Electronics. 4: 35-35. DOI: 10.1109/Jqe.1968.1074909 |
0.317 |
|
| 1968 |
Shih KK, Woodall JM, Blum SE, Foster LM. Efficient green electroluminescence from gap p-n junctions grown by liquid-phase epitaxy Journal of Applied Physics. 39: 2962-2963. DOI: 10.1063/1.1656703 |
0.301 |
|
| 1968 |
Lorenz MR, Reuter W, Dumke WP, Chicotka RJ, Pettit GD, Woodall JM. BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS Applied Physics Letters. 13: 421-423. DOI: 10.1063/1.1652500 |
0.32 |
|
| 1967 |
Rupprecht H, Woodall JM, Pettit GD. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY Applied Physics Letters. 11: 81-83. DOI: 10.1063/1.1755045 |
0.36 |
|
| 1966 |
Rupprecht H, Woodall JM, Konnerth K, Pettit DG. EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K Applied Physics Letters. 9: 221-223. DOI: 10.1063/1.1754721 |
0.371 |
|
| 1966 |
Peart RF, Weiser K, Woodall J, Fern R. Some effects of Zn diffusion on Mn-doped GaAs Applied Physics Letters. 9: 200-203. DOI: 10.1063/1.1754709 |
0.305 |
|
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