Year |
Citation |
Score |
2015 |
Yuan JS, Bi Y. Process and temperature robust voltage multiplier design for RF energy harvesting Microelectronics Reliability. 55: 107-113. DOI: 10.1016/j.microrel.2014.09.024 |
0.317 |
|
2015 |
Kritchanchai E, Yuan JS. CMOS voltage-controlled oscillator resilient design for wireless communication applications Wmsci 2015 - 19th World Multi-Conference On Systemics, Cybernetics and Informatics, Proceedings. 1: 249-253. |
0.333 |
|
2014 |
Yuan JS, Chen S. Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal Microelectronics Reliability. 54: 167-171. DOI: 10.1016/J.Microrel.2013.09.006 |
0.417 |
|
2013 |
Yuan JS, Kritchanchai E. Power amplifier resilient design for process, voltage, and temperature variations Microelectronics Reliability. 53: 856-860. DOI: 10.1016/J.Microrel.2013.02.003 |
0.42 |
|
2013 |
Jang SL, Yuan JS, Yen SD, Kritchanchai E, Huang GW. Experimental evaluation of hot electron reliability on differential Clapp-VCO Microelectronics Reliability. 53: 254-258. DOI: 10.1016/J.Microrel.2012.08.004 |
0.424 |
|
2012 |
Steighner JB, Yuan JS. Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulation Microelectronics Reliability. 52: 2932-2940. DOI: 10.1016/J.Microrel.2012.07.015 |
0.406 |
|
2012 |
Yen HD, Yuan JS, Wang RL, Huang GW, Yeh WK, Huang FS. RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments Microelectronics Reliability. 52: 2655-2659. DOI: 10.1016/J.Microrel.2012.04.007 |
0.465 |
|
2011 |
Liu Y, Yuan JS. CMOS RF power amplifier variability and reliability resilient biasing design and analysis Ieee Transactions On Electron Devices. 58: 540-546. DOI: 10.1109/TED.2010.2093141 |
0.34 |
|
2011 |
Liu Y, Yuan JS. CMOS RF low-noise amplifier design for variability and reliability Ieee Transactions On Device and Materials Reliability. 11: 450-457. DOI: 10.1109/TDMR.2011.2160350 |
0.348 |
|
2011 |
Liu X, Yuan JS, Liou JJ. Thermal reliability of VCO using InGaP/GaAs HBTs Microelectronics Reliability. 51: 2147-2152. DOI: 10.1016/J.Microrel.2011.07.019 |
0.324 |
|
2011 |
Kutty K, Yuan JS, Chen S. Evaluation of gate oxide breakdown effect on cascode class e power amplifier performance Microelectronics Reliability. 51: 1302-1308. DOI: 10.1016/j.microrel.2011.03.027 |
0.346 |
|
2010 |
Yuan JS, Ma J, Yeh WK, Hsu CW. Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances Microelectronics Reliability. 50: 807-812. DOI: 10.1016/J.Microrel.2010.02.019 |
0.414 |
|
2010 |
Yuan JS, Ma J. Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit Microelectronics Reliability. 50: 801-806. DOI: 10.1016/J.Microrel.2010.02.009 |
0.467 |
|
2010 |
Liu X, Yuan Js, Liou JJ. Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance Microelectronics Reliability. 50: 365-369. DOI: 10.1016/J.Microrel.2009.12.007 |
0.305 |
|
2008 |
Yuan JS, Tang H. CMOS RF design for reliability using adaptive gate-source biasing Ieee Transactions On Electron Devices. 55: 2348-2353. DOI: 10.1109/TED.2008.928024 |
0.376 |
|
2008 |
Yuan JS, Jiang L. Evaluation of hot-electron effect on LDMOS device and circuit performances Ieee Transactions On Electron Devices. 55: 1519-1523. DOI: 10.1109/TED.2008.922850 |
0.358 |
|
2008 |
Yuan JS, Ma J. Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency Ieee Transactions On Electron Devices. 55: 430-434. DOI: 10.1109/TED.2007.911092 |
0.32 |
|
2008 |
Yuan JS, Ma J. Gate oxide breakdown location effect on power amplifier and mixed-signal circuits International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 1365-1368. DOI: 10.1109/ICSICT.2008.4734815 |
0.352 |
|
2008 |
Liu X, Yuan JS, Liou JJ. Study of electrothermal stress effect on RF performance of InGaP/GaAs heterojunction bipolar transistor-based low-noise amplifier 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.15 |
0.361 |
|
2008 |
Kuang W, Cao L, Yu C, Yuan JS. PMOS breakdown effects on digital circuits – Modeling and analysis Microelectronics Reliability. 48: 1597-1600. DOI: 10.1016/J.Microrel.2008.06.019 |
0.722 |
|
2008 |
Liu X, Yuan JS, Liou JJ. InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability Microelectronics Reliability. 48: 1212-1215. DOI: 10.1016/J.Microrel.2008.06.009 |
0.349 |
|
2007 |
Yu C, Yuan JS. Electrical and temperature stress effects on class-AB power amplifier performances Ieee Transactions On Electron Devices. 54: 1346-1350. DOI: 10.1109/TED.2007.896601 |
0.336 |
|
2007 |
Yu C, Yuan JS. CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect Ieee Transactions On Electron Devices. 54: 59-67. DOI: 10.1109/TED.2006.887517 |
0.343 |
|
2007 |
Yuan JS. HfO2 CMOS device and circuit reliability Ieee Conference On Electron Devices and Solid-State Circuits 2007, Edssc 2007. 63-66. DOI: 10.1109/EDSSC.2007.4450062 |
0.311 |
|
2006 |
Yu C, Yuan JS, Shen J, Xiao E. Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation Ieee Transactions On Device and Materials Reliability. 6: 550-554. DOI: 10.1109/Tdmr.2006.887464 |
0.656 |
|
2006 |
Di J, Yuan JS. Energy-aware design for multi-rail encoding using NCL Iee Proceedings: Circuits, Devices and Systems. 153: 100-106. DOI: 10.1049/ip-cds:20059030 |
0.621 |
|
2006 |
Yu C, Yuan JS, Xiao E. Dynamic voltage stress effects on nMOS varactor Microelectronics Reliability. 46: 1812-1816. DOI: 10.1016/J.Microrel.2006.07.075 |
0.66 |
|
2005 |
Yu C, Yang H, Xiao E, Yuan JS. Voltage stress-induced performance degradation in NMOSFET mixer Ieice Electronics Express. 2: 133-137. DOI: 10.1587/Elex.2.133 |
0.428 |
|
2005 |
Yu C, Yuan JS. MOS RF reliability subject to dynamic voltage stress - Modeling and analysis Ieee Transactions On Electron Devices. 52: 1751-1758. DOI: 10.1109/TED.2005.852546 |
0.343 |
|
2005 |
Yuan JS, Di J. Teaching low-power electronic design in electrical and computer engineering Ieee Transactions On Education. 48: 169-182. DOI: 10.1109/TE.2004.837039 |
0.621 |
|
2005 |
Sadat A, Liu Y, Yu C, Yuan JS. Analysis and modeling of LC oscillator reliability Ieee Transactions On Device and Materials Reliability. 5: 119-126. DOI: 10.1109/Tdmr.2005.843831 |
0.371 |
|
2005 |
Yu C, Yuan JS, Sadat A. Dynamic stress-induced high-frequency noise degradations in nMOSFETs Microelectronics Reliability. 45: 1794-1799. DOI: 10.1016/J.Microrel.2005.07.096 |
0.611 |
|
2005 |
Yu C, Xiao E, Yuan JS. Voltage stress-induced hot carrier effects on SiGe HBT VCO Microelectronics Reliability. 45: 1402-1405. DOI: 10.1016/J.Microrel.2005.07.026 |
0.708 |
|
2005 |
Xiao E, Ghosh PP, Yu C, Yuan JS. Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Microelectronics Reliability. 45: 1382-1385. DOI: 10.1016/J.Microrel.2005.07.025 |
0.649 |
|
2005 |
Di J, Yuan JS. Dynamic active-bit detection and operands exchange for designing energy-aware asynchronous multipliers Proceedings of the 2005 International Conference On Computer Design, Cdes'05. 218-223. |
0.616 |
|
2005 |
Di J, Yuan JS. Energy-aware dual-rail bit-wise completion pipelined multipliers design Conference Proceedings - Ieee Southeastcon. 49-54. |
0.643 |
|
2005 |
Yu C, Yuan JS. RF reliability subject to dynamic voltage stress in NMOS circuits Ieee International Reliability Physics Symposium Proceedings. 431-434. |
0.416 |
|
2004 |
Yuan JS, Kuang W. Teaching asynchronous design in digital integrated circuits Ieee Transactions On Education. 47: 397-404. DOI: 10.1109/Te.2004.825923 |
0.611 |
|
2004 |
Kuang W, Yuan JS. Energy-efficient self-timed circuit design using supply voltage scaling Iee Proceedings: Circuits, Devices and Systems. 151: 278-284. DOI: 10.1049/ip-cds:20040296 |
0.626 |
|
2004 |
Yang L, Yuan JS. Modelling and analysis of ground bounce due to internal gate switching Iee Proceedings: Circuits, Devices and Systems. 151: 300-306. DOI: 10.1049/ip-cds:20040190 |
0.333 |
|
2004 |
Di J, Yuan JS, Hagedorn M. Analytical input mapping for modelling energy dissipation of complex CMOS gates Iee Proceedings: Circuits, Devices and Systems. 151: 294-299. DOI: 10.1049/ip-cds:20040160 |
0.568 |
|
2004 |
Yu C, Yuan JS. RF reliability of MOSFETs subject to electrical stress International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 2: 816-819. |
0.362 |
|
2003 |
Di J, Yuan JS. Run-time reconfigurable power-aware pipelined signed array multiplier design Scs 2003 - International Symposium On Signals, Circuits and Systems, Proceedings. 2: 405-408. DOI: 10.1109/SCS.2003.1227075 |
0.618 |
|
2003 |
Yang L, Yuan JS. Enhanced techniques for current balanced logic in mixed-signal ICs Proceedings of Ieee Computer Society Annual Symposium On Vlsi, Isvlsi. 2003: 278-279. DOI: 10.1109/ISVLSI.2003.1183499 |
0.344 |
|
2003 |
Di J, Yuan JS, Demara R. High throughput power-aware FIR filter design based on fine-grain pipelining multipliers and adders Proceedings of Ieee Computer Society Annual Symposium On Vlsi, Isvlsi. 2003: 260-261. DOI: 10.1109/ISVLSI.2003.1183490 |
0.611 |
|
2003 |
Yang L, Yuan JS. Analyzing internal-switching induced simultaneous switching noise Proceedings - International Symposium On Quality Electronic Design, Isqed. 2003: 410-415. DOI: 10.1109/ISQED.2003.1194768 |
0.336 |
|
2003 |
Kuang W, Yuan JS. An adaptive supply-voltage scheme for low power self-timed CMOS digital design Proceedings of the Ieee International Conference On Vlsi Design. 2003: 315-319. DOI: 10.1109/ICVD.2003.1183156 |
0.617 |
|
2003 |
Yang L, Yuan JS. Design of a new CMOS output buffer with low switching noise Proceedings of the International Conference On Microelectronics, Icm. 2003: 131-134. DOI: 10.1109/ICM.2003.238496 |
0.346 |
|
2003 |
Yang L, Yuan JS. Design of enhancement current-balanced logic for mixed-signal ICS Proceedings - Ieee International Symposium On Circuits and Systems. 1. |
0.37 |
|
2003 |
Xiao E, Yuan JS. Evaluation of oscillator phase noise subject to reliability Proceedings of the Annual Ieee International Frequency Control Symposium. 565-568. |
0.591 |
|
2003 |
Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1. |
0.681 |
|
2003 |
Di J, Yuan JS. Power-aware pipelined multiplier design based on 2-dimensional pipeline gating Proceedings of the Ieee Great Lakes Symposium On Vlsi. 64-67. |
0.629 |
|
2003 |
Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1. |
0.681 |
|
2002 |
Kuang W, Yuan JS. Low power operation using self-timed circuits and ultra-low supply voltage Proceedings of the International Conference On Microelectronics, Icm. 2002: 185-188. DOI: 10.1109/ICM-02.2002.1161526 |
0.635 |
|
2002 |
Li Q, Yuan JS. Linearity analysis and design optimisation for 0.18 μm CMOS RF mixer Iee Proceedings: Circuits, Devices and Systems. 149: 112-118. DOI: 10.1049/ip-cds:20020355 |
0.347 |
|
2002 |
Di J, Yuan JS, Hagedorn M. Switching activity modeling of multi-rail speed-independent circuits - A probabilistic approach Midwest Symposium On Circuits and Systems. 1: I475-I478. |
0.591 |
|
2002 |
Di J, Yuan JS, Hagedorn M. Energy-aware multiplier design in multi-rail encoding logic Midwest Symposium On Circuits and Systems. 2: II294-II297. |
0.581 |
|
2002 |
Kuang W, Yuan JS. Soft digital signal processing using self-timed circuits Ieee International Conference On Semiconductor Electronics, Proceedings, Icse. 194-198. |
0.632 |
|
2002 |
Xiao E, Yuan JS. Hot carrier and soft breakdown effects on VCO performance Ieee Mtt-S International Microwave Symposium Digest. 1: 569-572. |
0.597 |
|
2002 |
Xiao E, Yuan JS. RF circuit performance degradation due to hot carrier effects and soft breakdown Midwest Symposium On Circuits and Systems. 1. |
0.674 |
|
1998 |
Davis KL, Yuan JS. Impact of technology on low-voltage CMOS and BiCMOS switching delay Conference Proceedings - Ieee Southeastcon. 170-173. |
0.336 |
|
1997 |
Pham HD, Yuan JS. Circuit analysis of BiCMOS gate delay International Journal of Electronics. 83: 1-12. |
0.386 |
|
1994 |
Yuan JS. Base current reversal in bipolar transistors and circuits: a review and update Iee Proceedings: Circuits, Devices and Systems. 141: 299-306. DOI: 10.1049/ip-cds:19941101 |
0.315 |
|
1993 |
Yuan JS. Avalanche breakdown effects on AIGaAs/GaAs HBT performance International Journal of Electronics. 74: 909-916. DOI: 10.1080/00207219308925892 |
0.318 |
|
1992 |
Liou JJ, Yuan JS, Shakouri H. Modulating the Bipolar Junction Transistor Subjected to Neutron Irradiation for Integrated Circuit Simulation Ieee Transactions On Electron Devices. 39: 593-597. DOI: 10.1109/16.123483 |
0.318 |
|
1992 |
Yuan JS. Delay Analysis of BiNMOS Driver Including High Current Transients Ieee Transactions On Electron Devices. 39: 587-592. DOI: 10.1109/16.123482 |
0.401 |
|
1991 |
Yuan JS, Liou JJ. An Improved Early Voltage Model for Advanced Bipolar Transistors Ieee Transactions On Electron Devices. 38: 179-182. DOI: 10.1109/16.65753 |
0.351 |
|
1991 |
Yuan JS. Optimal CMOS interconnect width design in electromigration-free material International Journal of Electronics. 71: 771-779. DOI: 10.1080/00207219108925519 |
0.306 |
|
1991 |
Liou JJ, Yuan JS. Physics-based large-signal heterojunction bipolar transistor model for circuit simulation Iee Proceedings. Part G. Electronic Circuits and Systems. 138: 97-103. |
0.32 |
|
1990 |
Liou JJ, Yuan JS. Modeling the Reverse Base Current Phenomenon Due to Avalanche Effect in Advanced Bipolar Transistors Ieee Transactions On Electron Devices. 37: 2274-2276. DOI: 10.1109/16.59921 |
0.316 |
|
1989 |
Liou JJ, Drafts W, Yuan JS. Modeling the heterojunction bipolar transistor for integrated circuit simulation . 219-222. |
0.316 |
|
1989 |
Liou JJ, Whittaker A, Yuan JS. Modeling the two-dimensional emitter-base and base-collector junction capacitances of bipolar junction transistors Physica Status Solidi (a) Applied Research. 113. |
0.317 |
|
1988 |
Liou JJ, Yuan JS. COMPACT BIPOLAR TRANSISTOR MODEL FOR CIRCUIT SIMULATION Conference Proceedings - Ieee Southeastcon. 340-343. DOI: 10.1080/00207219008921168 |
0.362 |
|
1988 |
Yuan JS, Eisenstadt WR. Circuit modeling of collector current spreading effects in quasi-saturation for advanced bipolar transistors Solid State Electronics. 31: 1725-1731. DOI: 10.1016/0038-1101(88)90070-6 |
0.318 |
|
1988 |
Liou JJ, Yuan JS. A two-dimensional model for emitter-base junction capacitance of bipolar transistors Solid State Electronics. 31: 1541-1549. DOI: 10.1016/0038-1101(88)90028-7 |
0.304 |
|
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