Robert Colby, Ph.D. - Publications

Affiliations: 
2011 Materials Engineering Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering

17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605  0.469
2011 Yu Q, Jauregui LA, Wu W, Colby R, Tian J, Su Z, Cao H, Liu Z, Pandey D, Wei D, Chung TF, Peng P, Guisinger NP, Stach EA, Bao J, et al. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nature Materials. 10: 443-9. PMID 21552269 DOI: 10.1038/Nmat3010  0.484
2011 Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q  0.538
2011 Bolen ML, Colby R, Stach EA, Capano MA. Graphene formation on step-free 4H-SiC(0001) Journal of Applied Physics. 110. DOI: 10.1063/1.3644933  0.541
2011 Colby R, Bolen ML, Capano MA, Stach EA. Amorphous interface layer in thin graphite films grown on the carbon face of SiC Applied Physics Letters. 99. DOI: 10.1063/1.3635786  0.6
2010 Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455  0.515
2010 Prakash G, Bolen ML, Colby R, Stach EA, Capano MA, Reifenberger R. Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125009  0.547
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424  0.414
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024  0.46
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972  0.476
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998  0.561
2010 Cao H, Yu Q, Colby R, Pandey D, Park CS, Lian J, Zemlyanov D, Childres I, Drachev V, Stach EA, Hussain M, Li H, Pei SS, Chen YP. Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties Journal of Applied Physics. 107: 044310. DOI: 10.1063/1.3309018  0.583
2010 Stach E, Kim S, Zakharov D, Zvinevich Y, Riberio F, Miller L, Colby R, Salmon N, Kabius B. Characterizing the performance of the FEI Titan environmental Transmission Electron Microscope / scanning Transmission Electron Microscope Microscopy and Microanalysis. 16: 294-295. DOI: 10.1017/S1431927610061143  0.46
2010 Zakharov D, Colby R, Wildeson I, Ewoldt D, Liang Z, Zaluzec N, Garcia R, Sands T, Stach E. Transmission Electron Microscopy Study of Defects in Nanopyramidal InGaN LEDs Structures Microscopy and Microanalysis. 16: 1508-1509. DOI: 10.1017/S1431927610056709  0.476
2010 Colby R, Yu Q, Cao H, Pei SS, Stach EA, Chen YP. Cross-sectional transmission electron microscopy of thin graphite films grown by chemical vapor deposition Diamond and Related Materials. 19: 143-146. DOI: 10.1016/J.Diamond.2009.06.001  0.532
2010 Bolen ML, Shen T, Gu JJ, Colby R, Stach EA, Ye PD, Capano MA. Empirical study of hall bars on few-layer graphene on C-face 4H-SiC Journal of Electronic Materials. 39: 2696-2701. DOI: 10.1007/S11664-010-1375-1  0.523
2008 Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541  0.588
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