Andrew Steckl - Publications

Affiliations: 
Electrical Engineering University of Cincinnati, Cincinnati, OH 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Chemical Engineering

208 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Li H, Steckl AJ. Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics. Analytical Chemistry. PMID 30257554 DOI: 10.1021/acs.analchem.8b03636  0.6
2018 Tirgar A, Han D, Steckl AJ. Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina Nanoparticle Incorporated Alumina/Carbon Nanofibers. Journal of Agricultural and Food Chemistry. PMID 29750516 DOI: 10.1021/acs.jafc.7b05037  1
2018 Li H, Han D, Pauletti GM, Steckl AJ. Engineering a simple lateral flow device for animal blood coagulation monitoring. Biomicrofluidics. 12: 014110. PMID 29430275 DOI: 10.1063/1.5017496  1
2017 Han D, Steckl AJ. Selective pH Responsive Core-Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Delivery of Functional Molecules. Acs Applied Materials & Interfaces. PMID 29148700 DOI: 10.1021/acsami.7b16080  1
2017 Hegener MA, Li H, Han D, Steckl AJ, Pauletti GM. Point-of-care coagulation monitoring: first clinical experience using a paper-based lateral flow diagnostic device. Biomedical Microdevices. 19: 64. PMID 28695382 DOI: 10.1007/s10544-017-0206-z  1
2017 Han D, Yu X, Chai Q, Ayres N, Steckl AJ. Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning. Acs Applied Materials & Interfaces. PMID 28263054 DOI: 10.1021/acsami.6b16501  1
2017 Han D, Sherman S, Filocamo S, Steckl AJ. Long-term antimicrobial effect of nisin released from electrospun triaxial fiber membranes. Acta Biomaterialia. PMID 28216302 DOI: 10.1016/j.actbio.2017.02.029  1
2015 Blumenschein N, Han D, Steckl AJ. Phase Diagram Characterization Using Magnetic Beads as Liquid Carriers. Journal of Visualized Experiments : Jove. PMID 26381055 DOI: 10.3791/52957  1
2015 Zhao D, Wang T, Han D, Rusinek C, Steckl AJ, Heineman WR. Electrospun carbon nanofiber modified electrodes for stripping voltammetry. Analytical Chemistry. PMID 26255824 DOI: 10.1021/acs.analchem.5b02017  1
2015 Venkatraman V, Steckl AJ. Integrated OLED as excitation light source in fluorescent lateral flow immunoassays. Biosensors & Bioelectronics. 74: 150-155. PMID 26134292 DOI: 10.1016/j.bios.2015.06.049  1
2015 Gomez EF, Steckl AJ. Improved performance of OLEDs on cellulose/epoxy substrate using adenine as a hole injection layer Acs Photonics. 2: 439-445. DOI: 10.1021/ph500481c  1
2014 Gomez EF, Venkatraman V, Grote JG, Steckl AJ. Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes. Advanced Materials (Deerfield Beach, Fla.). PMID 25503083 DOI: 10.1002/adma.201403532  1
2014 Gomez EF, Venkatraman V, Grote JG, Steckl AJ. DNA bases thymine and adenine in bio-organic light emitting diodes. Scientific Reports. 4: 7105. PMID 25417819 DOI: 10.1038/srep07105  1
2014 Li H, Han D, Pauletti GM, Steckl AJ. Blood coagulation screening using a paper-based microfluidic lateral flow device. Lab On a Chip. 14: 4035-41. PMID 25144164 DOI: 10.1039/c4lc00716f  1
2014 Blumenschein NA, Han D, Caggioni M, Steckl AJ. Magnetic particles as liquid carriers in the microfluidic lab-in-tube approach to detect phase change. Acs Applied Materials & Interfaces. 6: 8066-72. PMID 24827028 DOI: 10.1021/am502845p  1
2014 Purandare S, Gomez EF, Steckl AJ. High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films. Nanotechnology. 25: 094012. PMID 24522258 DOI: 10.1088/0957-4484/25/9/094012  1
2014 Zocco AT, You H, Hagen JA, Steckl AJ. Pentacene organic thin-film transistors on flexible paper and glass substrates. Nanotechnology. 25: 094005. PMID 24521939 DOI: 10.1088/0957-4484/25/9/094005  0.72
2013 Han D, Steckl AJ. Triaxial electrospun nanofiber membranes for controlled dual release of functional molecules. Acs Applied Materials & Interfaces. 5: 8241-5. PMID 23924226 DOI: 10.1021/am402376c  1
2013 Steckl AJ. Circuits on cellulose Ieee Spectrum. 50: 48-61. DOI: 10.1109/MSPEC.2013.6420146  1
2013 You H, Steckl AJ. Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed and flexible substrates Solar Energy Materials and Solar Cells. 117: 544-548. DOI: 10.1016/j.solmat.2013.07.027  1
2013 You H, Steckl AJ. Electrowetting on non-fluorinated hydrophobic surfaces Journal of the Society For Information Display. 21: 411-416. DOI: 10.1002/jsid.199  1
2013 You H, Steckl AJ. Lightweight electrowetting display on ultra-thin glass substrate Journal of the Society For Information Display. 21: 192-197. DOI: 10.1002/jsid.169  1
2012 Punnamaraju S, You H, Steckl AJ. Triggered release of molecules across droplet interface bilayer lipid membranes using photopolymerizable lipids. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 7657-64. PMID 22548362 DOI: 10.1021/la3011663  1
2012 You H, Steckl AJ. Electrowetting on flexible substrates Journal of Adhesion Science and Technology. 26: 1931-1939. DOI: 10.1163/156856111X600244  1
2011 Han D, Filocamo S, Kirby R, Steckl AJ. Deactivating chemical agents using enzyme-coated nanofibers formed by electrospinning. Acs Applied Materials & Interfaces. 3: 4633-9. PMID 22087536 DOI: 10.1021/am201064b  1
2011 Bedford NM, Winget GD, Punnamaraju S, Steckl AJ. Immobilization of stable thylakoid vesicles in conductive nanofibers by electrospinning. Biomacromolecules. 12: 778-84. PMID 21254765 DOI: 10.1021/bm101386w  1
2011 Punnamaraju S, Steckl AJ. Voltage control of droplet interface bilayer lipid membrane dimensions. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 618-26. PMID 21142057 DOI: 10.1021/la1036508  1
2011 Steckl AJ, You H, Kim DY. Flexible electrowetting and electrowetting on flexible substrates Proceedings of Spie - the International Society For Optical Engineering. 7956. DOI: 10.1117/12.871021  1
2010 Kim DY, Steckl AJ. Electrowetting on paper for electronic paper display. Acs Applied Materials & Interfaces. 2: 3318-23. PMID 20973510 DOI: 10.1021/am100757g  1
2010 Wu D, Han D, Steckl AJ. Immunoassay on free-standing electrospun membranes. Acs Applied Materials & Interfaces. 2: 252-8. PMID 20356242 DOI: 10.1021/am900664v  1
2010 Kim DY, Steckl AJ. Complementary electrowetting devices on plasma-treated fluoropolymer surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 9474-83. PMID 20329778 DOI: 10.1021/la100035m  1
2010 Zhong M, Steckl AJ. Eu-doped GaN films grown by phase shift epitaxy Applied Physics Express. 3. DOI: 10.1143/APEX.3.121002  1
2010 You H, Steckl AJ. Three-color electrowetting display device for electronic paper Applied Physics Letters. 97. DOI: 10.1063/1.3464963  1
2010 Bedford NM, Steckl AJ. Photocatalytic self cleaning textile fibers by coaxial electrospinning Acs Applied Materials and Interfaces. 2: 2448-2455. DOI: 10.1021/am1005089  1
2010 Wang R, Steckl AJ. Effect of growth conditions on Eu3+ luminescence in GaN Journal of Crystal Growth. 312: 680-684. DOI: 10.1016/j.jcrysgro.2009.12.033  1
2009 Wu D, Steckl AJ. High speed nanofluidic protein accumulator. Lab On a Chip. 9: 1890-6. PMID 19532964 DOI: 10.1039/b823409d  1
2009 Han D, Steckl AJ. Superhydrophobic and oleophobic fibers by coaxial electrospinning. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 9454-62. PMID 19374456 DOI: 10.1021/la900660v  1
2008 Mahalingam V, Sudarsan V, Munusamy P, van Veggel FC, Wang R, Steckl AJ, Raudsepp M. Mg 2+-doped GaN nanoparticles as blue-light emitters: a method to avoid sintering at high temperatures. Small (Weinheim An Der Bergstrasse, Germany). 4: 105-10. PMID 18081135 DOI: 10.1002/smll.200700107  1
2008 Kim DY, Herman S, Steckl AJ. I-V and gain characteristics of electrowetting-based liquid field effect transistor Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 2-5. DOI: 10.1109/UGIM.2008.8  1
2008 Bedford N, Han D, Steckl A. Electrospun biopolymer-based micro/nanofibers Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 139-141. DOI: 10.1109/UGIM.2008.44  1
2008 Steckl A. NanoBioMaterials - From BioLEDs to tissue engineering Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 41-43. DOI: 10.1109/UGIM.2008.18  1
2008 Allen SC, Steckl AJ. A nearly ideal phosphor-converted white light-emitting diode Applied Physics Letters. 92. DOI: 10.1063/1.2901378  1
2008 Park JH, Steckl AJ. Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates Physica Status Solidi (a) Applications and Materials Science. 205: 26-29. DOI: 10.1002/pssa.200776715  1
2008 Wang R, Steckl AJ. Effect of Si and Er co-doping on green electroluminescence from GaN:Er ELDs Materials Research Society Symposium Proceedings. 1068: 83-88.  1
2008 Han D, Boyce ST, Steckl AJ. Versatile core-sheath biofibers using coaxial electrospinning Materials Research Society Symposium Proceedings. 1094: 33-38.  1
2007 So F, Steckl AJ. Journal of Display Technology: Guest Editorial Ieee/Osa Journal of Display Technology. 3: 90. DOI: 10.1109/JDT.2007.900524  1
2007 Allen SC, Steckl AJ. ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection Ieee/Osa Journal of Display Technology. 3: 155-159. DOI: 10.1109/JDT.2007.895358  1
2007 Kim DY, Steckl AJ. Liquid-state field-effect transistors using electrowetting Applied Physics Letters. 90. DOI: 10.1063/1.2435508  1
2007 Steckl AJ. DNA - A new material for photonics? Nature Photonics. 1: 3-5. DOI: 10.1038/nphoton.2006.56  1
2006 Hagen JA, Li WX, Grote JG, Steckl AJ. Red/Blue electroluminescence from Europium-doped organic light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 6117. DOI: 10.1117/12.643894  1
2006 Park JH, Steckl AJ. Site specific Eu 3+ stimulated emission in GaN host Applied Physics Letters. 88. DOI: 10.1063/1.2161159  1
2006 Munasinghe C, Steckl AJ. GaN:Eu electroluminescent devices grown by interrupted growth epitaxy Thin Solid Films. 496: 636-642. DOI: 10.1016/j.tsf.2005.08.328  1
2006 Park JH, Steckl AJ. Visible lasing from GaN:Eu optical cavities on sapphire substrates Optical Materials. 28: 859-863. DOI: 10.1016/j.optmat.2005.09.060  1
2006 Allen SC, Steckl AJ. Efficiency and stability of perylene-based dyes for emissive displays Sid Conference Record of the International Display Research Conference. 59-62.  1
2006 Steckl AJ, Park JH. Visible lasing on Si using rare earth doped GaN Ieee International Conference On Group Iv Photonics Gfp. 209-210.  1
2005 Heikenfeld J, Steckl AJ. Electrowetting-based pixelation for light wave coupling displays Digest of Technical Papers - Sid International Symposium. 36: 746-749. DOI: 10.1889/1.2036551  1
2005 Steckl AJ. Light emission from rare earth lumophores in inorganic and organic hosts Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 652-653. DOI: 10.1109/LEOS.2005.1548174  1
2005 Park JH, Steckl AJ. Demonstration of a visible laser on silicon using Eu-doped GaN thin films Journal of Applied Physics. 98. DOI: 10.1063/1.2037867  1
2005 Heikenfeld J, Steckl AJ. High-transmission electrowetting light valves Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901816  1
2005 Heikenfeld J, Steckl AJ. Intense switchable fluorescence in light wave coupled electrowetting devices Applied Physics Letters. 86. DOI: 10.1063/1.1842853  1
2005 Heikenfeld J, Steckl AJ. Electrowetting light valves with greater than 80'% transmission, unlimited view angle, and video response Digest of Technical Papers - Sid International Symposium. 36: 1674-1677.  1
2004 Heikenfeld J, Steckl AJ. Fabrication and performance characteristics of black-dielectric electroluminescent 160 × 80-pixel displays Journal of the Society For Information Display. 12: 57-64. DOI: 10.1889/1.1824240  1
2004 Park JH, Steckl AJ. Laser action in Eu-doped GaN thin-film cavity at room temperature Applied Physics Letters. 85: 4588-4590. DOI: 10.1063/1.1821630  1
2004 Steckl AJ, Heikenfeld J. Emissive electrowetting devices for Hybrid I/O™ displays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 250-251.  1
2004 Heikenfeld JC, Steckl AJ. Liquid light Information Display. 20: 26-31.  1
2003 Cheng L, Steckl AJ, Scofield J. SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor Ieee Transactions On Electron Devices. 50: 2159-2164. DOI: 10.1109/TED.2003.816106  1
2003 Cheng L, Steckl AJ, Scofield JD. Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sensors Journal of Microelectromechanical Systems. 12: 797-803. DOI: 10.1109/JMEMS.2003.820282  1
2003 Steckl AJ, Allen S, Heikenfeld J. Hybrid inorganic/organic luminescent devices 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 38-39. DOI: 10.1109/ISDRS.2003.1271984  0.92
2003 Lee DS, Steckl AJ. Enhanced blue emission from Tm-doped AlxGa1-xN electroluminescent thin films Applied Physics Letters. 83: 2094-2096. DOI: 10.1063/1.1611275  1
2003 Pan M, Steckl AJ. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition Applied Physics Letters. 83: 9-11. DOI: 10.1063/1.1590738  1
2003 Wang YQ, Steckl AJ. Three-color integration on rare-earth-doped GaN electroluminescent thin films Applied Physics Letters. 82: 502-504. DOI: 10.1063/1.1539301  1
2003 Lee DS, Steckl AJ. Selective enhancement of blue electroluminescence from GaN:Tm Applied Physics Letters. 82: 55-57. DOI: 10.1063/1.1534414  1
2003 Heikenfeld JC, Steckl AJ. Inorganic EL displays at the crossroads Information Display. 19: 20-25.  1
2002 Heikenfeld J, Steckl AJ. Rare-earth-doped GaN switchable color electroluminescent devices Ieee Transactions On Electron Devices. 49: 1545-1551. DOI: 10.1109/TED.2002.802663  1
2002 Heikenfeld J, Steckl AJ. Contrast-enhancement in black dielectric electroluminescent devices Ieee Transactions On Electron Devices. 49: 1348-1352. DOI: 10.1109/TED.2002.801298  1
2002 Baker CC, Heikenfeld J, Steckl AJ. Photoluminescent and electroluminescent Zn2Si0.5Ge0.5O4:Mn thin films for integrated optic devices Ieee Journal On Selected Topics in Quantum Electronics. 8: 1420-1426. DOI: 10.1109/JSTQE.2002.806695  1
2002 Cheng J, Steckl AJ. Focused ion beam fabricated microgratings for integrated optics applications Ieee Journal On Selected Topics in Quantum Electronics. 8: 1323-1330. DOI: 10.1109/JSTQE.2002.806676  1
2002 Heikenfeld J, Steckl AJ. Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer Ieee Transactions On Electron Devices. 49: 557-563. DOI: 10.1109/16.992862  1
2002 Garter MJ, Steckl AJ. Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN Ieee Transactions On Electron Devices. 49: 48-54. DOI: 10.1109/16.974748  1
2002 Lee DS, Steckl AJ. Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photopumping Applied Physics Letters. 81: 2331-2333. DOI: 10.1063/1.1509111  1
2002 Lee DS, Steckl AJ. Lateral color integration on rare-earth-doped GaN electroluminescent thin films Applied Physics Letters. 80: 1888-1890. DOI: 10.1063/1.1461884  1
2002 Lee DS, Steckl AJ. Ga flux dependence of Er-doped GaN luminescent thin films Applied Physics Letters. 80: 728-730. DOI: 10.1063/1.1447318  1
2002 Lee DS, Heikenfeld J, Steckl AJ. Growth-temperature dependence of Er-doped GaN luminescent thin films Applied Physics Letters. 80: 344-346. DOI: 10.1063/1.1434312  1
2002 Cheng L, Pan M, Scofield J, Steckl AJ. Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications Journal of Electronic Materials. 31: 361-365.  1
2001 Lee BK, Chi RC, Chao DL, Cheng J, Chry IY, Beyette FR, Steckl AJ. High-Density Er-Implanted GaN Optical Memory Devices. Applied Optics. 40: 3552-8. PMID 18360384  0.48
2001 Chyr I, Steckl AJ. GaN focused ion beam micromachining with gas-assisted etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2547-2550. DOI: 10.1116/1.1417550  1
2001 Cheng J, Steckl AJ. Mg-Ga liquid metal ion source for implantation doping of GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2551-2554. DOI: 10.1116/1.1410095  1
2001 Lee DS, Steckl AJ. Room-temperature-grown rare-earth-doped GaN luminescent thin films Applied Physics Letters. 79: 1962-1964. DOI: 10.1063/1.1406138  1
2001 Chi CJ, Steckl AJ. Digital thin-film color optical memory Applied Physics Letters. 78: 255-257. DOI: 10.1063/1.1339250  1
2001 Zavada JM, Gregorkiewicz T, Steckl AJ. Rare earth doped semiconductors III Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 81: 1-2. DOI: 10.1016/S0921-5107(00)00666-8  1
2001 Heikenfeld J, Steckl AJ. Rare-earth doped gan electroluminescent devices for robust flat panel displays Annual Device Research Conference Digest. 177-178.  1
2001 Heikenfeld J, Steckl AJ. AC operation of GaN:Er thin film electroluminescent display devices Materials Research Society Symposium - Proceedings. 639.  1
2001 Chi RCJ, Steckl AJ. Digital thin film non-volatile optical memory Annual Device Research Conference Digest. 137-138.  1
2000 Chen J, Scofield J, Steckl AJ. Formation of SiC SOI structures by direct growth on insulating layers Journal of the Electrochemical Society. 147: 3840-3844. DOI: 10.1149/1.1393983  1
2000 Chen J, Steckl AJ, Loboda MJ. In situ N2-doping of SiC films grown on Si(111) by chemical vapor deposition from organosilanes Journal of the Electrochemical Society. 147: 2324-2327. DOI: 10.1149/1.1393528  1
2000 Citrin PH, Northrup PA, Birkhahn R, Steckl AJ. Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 15-22. DOI: 10.1109/SIM.2000.939189  0.92
2000 Heikenfeld J, Steckl AJ. Alternating current thin-film electroluminescence of GaN:Er Applied Physics Letters. 77: 3520-3522.  1
2000 Chao LC, Steckl AJ. CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation Journal of Electronic Materials. 29: 1059-1062.  1
2000 Chen J, Steckl AJ, Loboda MJ. Growth and characterization of N-doped SiC films from trimethylsilane Materials Science Forum. 338.  1
2000 Citrin PH, Northrup PA, Birkhahn R, Steckl AJ. Local structure and bonding of Er in GaN: A contrast with Er in Si Applied Physics Letters. 76: 2865-2867.  1
1999 Madapura S, Steckl AJ, Loboda M. Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilane Journal of the Electrochemical Society. 146: 1197-1202. DOI: 10.1149/1.1391745  1
1999 Saxena V, Nong J, Steckl AJ. High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination Ieee Transactions On Electron Devices. 46: 456-464. DOI: 10.1109/16.748862  1
1999 Chyr I, Steckl AJ. Focused ion beam micromachining of GaN photonic devices Materials Research Society Symposium - Proceedings. 537.  1
1999 Steckl AJ, Zavada JM. Optoelectronic properties and applications of rare-earth-doped GaN Mrs Bulletin. 24: 33-38.  1
1999 Chao LC, Steckl AJ. Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write Applied Physics Letters. 74: 2364-2366.  1
1999 Steckl AJ, Zavada JM. Photonic applications of rare-earth-doped materials Mrs Bulletin. 24: 16-17.  1
1999 Steckl AJ, Chyr I. Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 362-365.  1
1999 Steckl AJ, Garter M, Birkhahn R. Visible and infrared electroluminescence from Er-doped GaN Schottky diodes Annual Device Research Conference Digest. 200-201.  1
1999 Birkhahn R, Garter M, Steckl AJ. Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates Applied Physics Letters. 74: 2161-2163.  1
1999 Garter M, Birkhahn R, Steckl AJ, Scofield J. Visible and infrared rare-earth activated electroluminescence from erbium doped GaN Materials Research Society Symposium - Proceedings. 537.  1
1998 Steckl AJ, Garter M, Birkhahn R, Scofield J. Green electroluminescence from Er-doped GaN Schottky barrier diodes Applied Physics Letters. 73: 2450-2452. DOI: 10.1063/1.122478  1
1998 Birkhahn R, Steckl AJ. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates Applied Physics Letters. 73: 2143-2145. DOI: 10.1063/1.122404  1
1998 Steckl AJ, Birkhahn R. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy Applied Physics Letters. 73: 1700-1702. DOI: 10.1063/1.122250  1
1998 Saxena V, Steckl AJ. Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions Semiconductors and Semimetals. 52: 77-160. DOI: 10.1016/S0080-8784(08)62845-8  1
1998 Saxena V, Steckl AJ. High voltage 4H SiC rectifiers using Pt and Ni metallization Materials Science Forum. 264: 937-940.  1
1998 Saxena V, Steckl AJ. Fast and anisotropic reactive ion etching of 4H and 6H SiC in NF3 Materials Science Forum. 264: 829-832.  1
1998 Chen J, Steckl AJ, Loboda MJ. Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane Materials Science Forum. 264: 239-242.  1
1998 Devrajan J, Steckl AJ, Tran CA, Stall RA. Optical properties of GaN films grown on SiC/Si Materials Science Forum. 264: 1149-1152.  1
1998 Chen J, Steckl AJ, Loboda MJ. Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1305-1308.  1
1997 Steckl AJ. Exploring the frontiers of optoelectronics with FIB technology Advanced Workshop On Frontiers in Electronics, Proceedings, Wofe. 47-50.  1
1997 Steckl AJ, Devrajan J, Tran C, Stall RA. Growth and characterization of GaN thin films SiC SOI substrates Journal of Electronic Materials. 26: 217-223.  1
1997 Yih PH, Saxena V, Steckl AJ. A review of SiC reactive ion etching in fluorinated plasmas Physica Status Solidi (B) Basic Research. 202: 605-624.  1
1997 Chaudhuri J, Cheng X, Yuan C, Steckl AJ. Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topographic study Thin Solid Films. 292: 1-6.  1
1995 Yih PH, Steckl AJ. Residue-Free Reactive Ion Etching of 3C-SiC and 6H-SiC in Fluorinated Mixture Plasmas Journal of the Electrochemical Society. 142: 2853-2860. DOI: 10.1149/1.2050105  1
1995 Steckl AJ, Mogul HC, Prokes SM, Xu J. Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photoluminescence Journal of the Electrochemical Society. 142: L69-L71. DOI: 10.1149/1.2048652  1
1995 Li JP, Steckl AJ. Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization Journal of the Electrochemical Society. 142: 634-641. DOI: 10.1149/1.2044113  1
1995 Yih PH, Steckl AJ. Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas Journal of the Electrochemical Society. 142: 312-319. DOI: 10.1149/1.2043918  1
1995 Xu J, Steckl AJ. Stain-etched porous silicon visible light emitting diodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1221-1224. DOI: 10.1116/1.588240  1
1995 Chen P, Steckl AJ. Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation Journal of Applied Physics. 77: 5616-5624. DOI: 10.1063/1.359203  1
1994 Su JN, Steckl AJ. SiC devices for space electronics: Phase I-high voltage, temperature hard contacts Sae Technical Papers. DOI: 10.4271/941227  1
1994 Steckl AJ, Xu J, Mogul HC. Crystallinity and Photoluminescence in Stain-Etched Porous Si Journal of the Electrochemical Society. 141: 674-679. DOI: 10.1149/1.2054790  1
1994 Xu J, Steckl AJ. Visible Electroluminescence from Stain-Etched Porous Si Diodes Ieee Electron Device Letters. 15: 507-509. DOI: 10.1109/55.338419  1
1994 Yih PH, Li JP, Steckl AJ. SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapor Deposition Ieee Transactions On Electron Devices. 41: 281-287. DOI: 10.1109/16.275210  1
1994 Yuan C, Steckl AJ, Loboda MJ. Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane Applied Physics Letters. 64: 3000-3002. DOI: 10.1063/1.111384  1
1994 Chen P, Steckl AJ. Vacancy injection enhanced Al-Ga inter-diffusion in Si FIB implanted superlattice Materials Research Society Symposium Proceedings. 325: 37-42.  1
1994 Xu J, Steckl AJ. Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet etching Applied Physics Letters. 65: 2081-2083.  1
1994 Yan HQ, Wang H, Steckl AJ. Low energy ion beam assisted deposition of low resistivity aluminum using TMAA Materials Research Society Symposium Proceedings. 316: 863-868.  1
1993 Li JP, Steckl AJ. Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propane Infiltration Journal of the Electrochemical Society. 140: L89-L92. DOI: 10.1149/1.2221651  0.92
1993 Yih PH, Steckl AJ. Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of (β-SiC in Fluorinated Plasmas Journal of the Electrochemical Society. 140: 1813-1824. DOI: 10.1149/1.2221648  1
1993 Li JP, Yih PH, Steckl AJ. Thickness Determination of SiC-on-Si Thin Films by Anisotropic Reactive Ion Etching and Preferential Wet Etching Journal of the Electrochemical Society. 140: 178-182. DOI: 10.1149/1.2056081  1
1993 Mogul HC, Ganin E, Steckl AJ. Electrical Properties of Si p<sup>+</sup>-n Junctions for Sub-0.25 μm CMOS Fabricated by Ga FIB Implantation Ieee Transactions On Electron Devices. 40: 1823-1829. DOI: 10.1109/16.277340  1
1993 Steckl AJ, Yuan C, Li JP, Loboda MJ. Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane Applied Physics Letters. 63: 3347-3349. DOI: 10.1063/1.110140  1
1993 Steckl AJ, Xu J, Mogul HC. Photoluminescence from stain-etched polycrystalline Si thin films Applied Physics Letters. 62: 2111-2113. DOI: 10.1063/1.109468  1
1993 Steckl AJ, Roth MD, Powell JA, Larkin DJ. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates Applied Physics Letters. 62: 2545-2547. DOI: 10.1063/1.109291  1
1993 Steckl AJ, Su JN. High voltage, temperature-hard 3C-SiC schottky diodes using All-Ni metallization Technical Digest - International Electron Devices Meeting. 695-998.  1
1993 Li JP, Steckl AJ. AFM study of nucleation and void formation in SiC carbonization of Si Materials Research Society Symposium Proceedings. 280: 739-744.  1
1993 Steckl AJ, Xu J, Mogul HC. Photoluminescence of chemically etched polycrystalline and amorphous Si thin films Materials Research Society Symposium Proceedings. 298: 211-216.  1
1993 Tong QY, Gosele U, Yuan C, Steckl AJ. Feasibility study of SiC on oxide by wafer bonding and layer transferring Ieee International Soi Conference. 60-61.  1
1992 Steckl AJ, Li JP. Epitaxial growth of β-SiC on Si by RTCVD with C<inf>3</inf>H<inf>8</inf> and SiH<inf>4</inf> Ieee Transactions On Electron Devices. 39: 64-74. DOI: 10.1109/16.108213  1
1992 Steckl AJ, Mogren SA, Roth MW, Li JP. Atomic probe imaging of β-SiC thin films grown on (100) Si Applied Physics Letters. 60: 1495-1497. DOI: 10.1063/1.107282  1
1992 Steckl AJ, Mogul HC, Mogren S. Localized fabrication of Si nanostructures by focused ion beam implantation Applied Physics Letters. 60: 1833-1835. DOI: 10.1063/1.107179  1
1992 Steckl AJ, Yih PH. Residue-free reactive ion etching of β-SiC in CHF3/O 2 with H2 additive Applied Physics Letters. 60: 1966-1968. DOI: 10.1063/1.107113  1
1992 Steckl AJ, Li JP. Uniform β-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition Applied Physics Letters. 60: 2107-2109. DOI: 10.1063/1.107104  1
1992 Steckl AJ, Li JP. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon Thin Solid Films. 216: 149-154. DOI: 10.1016/0040-6090(92)90886-G  1
1990 Pan WS, Steckl AJ. Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen Journal of the Electrochemical Society. 137: 212-220. DOI: 10.1149/1.2086368  1
1990 Lin CM, Steckl AJ. Fabrication of sub-micrometer PMOSFETs with sub-100 nm p+-n shallow junctions using group III dual ion implantation Solid State Electronics. 33: 472-474. DOI: 10.1016/0038-1101(90)90054-I  1
1989 Lin CM, Steckl AJ, Chow TP. Sub-100-nm p+-n shallow junctions fabricated by group III dual ion implantation and rapid thermal annealing Applied Physics Letters. 54: 1790-1792. DOI: 10.1063/1.101491  1
1988 Lin CM, Steckl AJ, Chow TP. Electrical Properties of Ga-Implanted Si p<sup>+</sup>-n Shallow Junctions Fabricated by Low-Temperature Rapid Thermal Annealing Ieee Electron Device Letters. 9: 594-597. DOI: 10.1109/55.9287  1
1988 Lin CM, Steckl AJ, Chow TP. Si p+-n shallow junction fabrication using on-axis Ga + implantation Applied Physics Letters. 52: 2049-2051. DOI: 10.1063/1.99577  1
1987 Zetterlund B, Steckl AJ. Low-Temperature Operation of Silicon Surface-Channel Charge-Coupled Devices Ieee Transactions On Electron Devices. 34: 39-51. DOI: 10.1109/T-ED.1987.22883  1
1987 Bencuya SS, Steckl AJ, Burkey BC. Impact of edge effects on charge-packet-splitting accuracy Solid State Electronics. 30: 299-305. DOI: 10.1016/0038-1101(87)90188-2  1
1987 Pan WS, Steckl AJ. ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF//3 AND OXYGEN PLASMA Materials Research Society Symposia Proceedings. 76: 157-162.  1
1986 Lu WJ, Chow TP, Steckl AJ. Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) Dielectric Isolation Process Journal of the Electrochemical Society. 133: 1180-1185. DOI: 10.1149/1.2108815  1
1986 Sugiura J, Lu WJ, Cadien KC, Steckl AJ. REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 349-354. DOI: 10.1116/1.583329  1
1986 Steckl AJ. Particle-Beam Fabrication and In Situ Processing of Integrated Circuits Proceedings of the Ieee. 74: 1753-1774. DOI: 10.1109/PROC.1986.13690  1
1985 Chow TP, Steckl AJ. CRITIQUE OF REFRACTORY GATE APPLICATIONS FOR MOS VLSI Vlsi Electronics, Microstructure Science. 9: 37-91.  1
1985 Lu WJ, Steckl AJ, Chow TP. COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION Electrochemical Society Extended Abstracts. 85: 327-329.  1
1984 Lu WJ, Chow TP, Steckl AJ, Katz W. Thermal Oxidation of Sputtered Silicon Carbide Thin Films Journal of the Electrochemical Society. 131: 1907-1914. DOI: 10.1149/1.2115988  1
1984 Bencuya SS, Steckl AJ. Charge-Packet Splitting In Charge-Domain Devices Ieee Transactions On Electron Devices. 31: 1494-1501. DOI: 10.1109/T-ED.1984.21738  1
1984 Steckl AJ, Moore JA, Corelli JC, Liu WT. IMAGE ENHANCEMENT IN HIGH-RESLUTION LITHOGRAPHY THROUGH POLYMER GRAFTING TECHNIQUES Digest of Technical Papers - Symposium On Vlsi Technology. 60-61.  1
1983 Chow TP, Steckl AJ. Refractory Metal Silicides: Thin-Film Properties and Processing Technology Ieee Transactions On Electron Devices. 30: 1480-1497. DOI: 10.1109/T-ED.1983.21327  1
1983 Vidinski WJ, Steckl AJ, Corelli JC. Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of infrared active defects in Si Journal of Applied Physics. 54: 4097-4103. DOI: 10.1063/1.332542  1
1983 Chow TP, Hamzeh K, Steckl AJ. Thermal oxidation of niobium silicide thin films Journal of Applied Physics. 54: 2716-2719. DOI: 10.1063/1.332297  1
1983 Chow TP, Steckl AJ. REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES Electrochemical Society Extended Abstracts. 83: 328-329.  1
1983 Chow TP, Steckl AJ. REVIEW OF REFRACTORY GATES FOR MOS VLSI Technical Digest - International Electron Devices Meeting. 513-517.  1
1982 Smith GE, Steckl AJ. RECIPE—A Two-Dimensional VLSI Process Modeling Program Ieee Transactions On Electron Devices. 29: 216-221. DOI: 10.1109/T-ED.1982.20687  1
1982 Tiemann JJ, Vogelsong TL, Steckl AJ. Charge Domain Recursive Filters Ieee Journal of Solid-State Circuits. 17: 597-605. DOI: 10.1109/JSSC.1982.1051783  1
1982 Chow TP, Jerdonek RT, Steckl AJ. Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits Ieee Electron Device Letters. 3: 37-40. DOI: 10.1109/EDL.1982.25469  1
1982 Chow TP, Steckl AJ. Plasma etching of sputtered Mo and MoSi2 thin films in NF 3 gas mixtures Journal of Applied Physics. 53: 5531-5540. DOI: 10.1063/1.331488  1
1982 Vidinski W, Steckl A, Corelli JC. Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon Journal of Nuclear Materials. 108: 693-699. DOI: 10.1016/0022-3115(82)90542-6  1
1982 Chow TP, Steckl AJ. DEVELOPMENT OF REFRACTORY GATE METALLIZATION FOR VLSI Electrochemical Society Extended Abstracts. 82: 353-354.  1
1982 Vidinski W, Corelli JC, Steckl AJ. CORRELATION OF STRESS-SYMMETRY EXPERIMENTS WITH PHOTOEXCITATION AND DECAY PROCESSES FOR INFRARED-ACTIVE DEFECT ABSORPTION BANDS IN SILICON Electrochemical Society Extended Abstracts. 82: 361-362.  1
1982 Bencuya SS, STeckl AJ, Vogelsong TL. COEFFICIENT ACCURACY FOR CDD PACKET SPLITTING TECHNIQUES Technical Digest - International Electron Devices Meeting. 123-126.  1
1982 Vogelsong TL, Tiemann JJ, Steckl AJ. HIGH-Q BANDPASS FILTER DEMONSTRATING CHARGE DOMAIN TECHNOLOGY Technical Digest - International Electron Devices Meeting. 123-126.  1
1981 Okazaki S, Chow TP, Steckl AJ. Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures Ieee Transactions On Electron Devices. 28: 1364-1368. DOI: 10.1109/T-ED.1981.20614  1
1981 Tam KY, Steckl AJ. Integrated PbS-Si IR Detector Read-Out Ieee Electron Device Letters. 130-132. DOI: 10.1109/EDL.1981.25368  1
1981 Zetterlund B, Steckl AJ. Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors Applied Physics Letters. 39: 155-156. DOI: 10.1063/1.92644  1
1981 Chow TP, Steckl AJ, Brown DM. The effect of annealing on the properties of silicidized molybdenum thin films Journal of Applied Physics. 52: 6331-6336. DOI: 10.1063/1.328575  1
1980 Motamedi ME, Tam KY, Steckl AJ. Design and Evaluation of Ion-Implanted CMOS Structures Ieee Transactions On Electron Devices. 27: 578-583. DOI: 10.1109/T-ED.1980.19902  1
1980 Chow TP, Steckl AJ. Plasma etching characteristics of sputtered MoSi2 films Applied Physics Letters. 37: 466-468. DOI: 10.1063/1.91967  1
1980 Chow TP, Steckl AJ. Size effects in MoSi2-gate MOSFET's Applied Physics Letters. 36: 297-299. DOI: 10.1063/1.91468  1
1980 Steckl AJ, Mohammed G. The effect of ambient atmosphere in the annealing of indium tin oxide films Journal of Applied Physics. 51: 3890-3895. DOI: 10.1063/1.328135  1
1980 Elabd H, Steckl AJ. Structural and compositional properties of the PbS-Si heterojunction Journal of Applied Physics. 51: 726-737. DOI: 10.1063/1.327333  1
1980 Elabd H, Steckl AJ. Auger analysis of the PbS-Si heterojunction Journal of Electronic Materials. 9: 525-549. DOI: 10.1007/BF02652934  1
1980 Zetterlund B, Steckl AJ. LOW TEMPERATURE RECOMBINATION LIFETIME IN Si MOSFET's Technical Digest - International Electron Devices Meeting. 284-288.  1
1980 Chow TP, Steckl AJ. PLANAR PLASMA ETCHING OF Mo AND MoSi//2 USING NF//3 Technical Digest - International Electron Devices Meeting. 149-151.  1
1980 Steckl AJ, Sheu SP. AC ADMITTANCE OF THE p-n PbS-Si HETEROJUNCTION Solid-State Electronics. 23: 715-720.  1
1980 Smith GE, Steckl AJ. TWO-DIMENSIONAL INTEGRATED CIRCUIT PROCESS MODELING PROGRAM - RECIPE Technical Digest - International Electron Devices Meeting. 227-230.  1
1979 Steckl AJ, Tam KY, Motamedi ME. Direct injection readout of the p-n PbS-Si heterojunction detector Applied Physics Letters. 35: 537-539. DOI: 10.1063/1.91200  1
1979 Elabd H, Steckl AJ, Vidinski W. EFFECT OF SUBSTRATE ORIENTATION ON THE PROPERTIES OF THE Si/PbS HETEROJUNCTIONS Solar Cells: Their Science, Technology, Applications and Economics. 1: 199-208. DOI: 10.1016/0379-6787(80)90050-2  1
1979 Sheu SP, Steckl AJ. FREQUENCY CHARACTERISTICS OF p-n PbS-Si HETEROJUNCTION IR DETECTORS Infrared Physics. 351-353.  1
1976 Steckl AJ. Infrared optical properties of sputtered In2-x Snx O3-y films Infrared Physics. 16: 145-147. DOI: 10.1016/0020-0891(76)90025-7  1
1976 Steckl AJ. Infrared charge coupled devices Infrared Physics. 16: 65-73. DOI: 10.1016/0020-0891(76)90012-9  1
1975 Steckl AJ. LOW TEMPERATURE SILICON CCD OPERATION . 383-388.  1
1975 Steckl AJ. INJECTION EFFICIENCY IN HYBRID IRCCD'S . 85-91.  1
1972 Steckl AJ, Das PK. MODEL OF THE ACOUSTOELECTRIC OSCILLATOR: FIELD-INDUCED FREQUENCY MODULATION, HARMONIC AND OFF-AXIS GENERATION AND MIXING . 158-164.  1
1972 Arellano ME, Das PK, Steckl A. ACOUSTO-ELECTRIC CURRENT STEPS IN OPTICALLY POLISHED PARALLEL CADMIUM SULPHIDE . 168-170.  1
1970 Das P, Steckl AJ. Current oscillations in cadmium sulphide with optically polished parallel surfaces Applied Physics Letters. 16: 163-165. DOI: 10.1063/1.1653145  1
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