| Year |
Citation |
Score |
| 2011 |
Krishna L, Lalonde AD, Moran PD. Increase in the thermoelectric power produced by mechanically alloyed Pb 1-x Sn x Te due to the presence of 15 nm SnO 2 inclusions Journal of Applied Physics. 110. DOI: 10.1063/1.3651173 |
0.73 |
|
| 2011 |
Swanson M, Sunder M, Tangtrakarn N, Krishna L, Moran PD. Impact of the surface/interface on the ionic conductivity of thin film Gd-doped CeO2 Solid State Ionics. 189: 45-49. DOI: 10.1016/J.Ssi.2011.02.010 |
0.681 |
|
| 2010 |
Swanson M, Tangtrakarn N, Sunder M, Moran PD. Impact of the presence of grain boundaries on the in-plane ionic conductivity of thin film Gd-doped CeO2 Solid State Ionics. 181: 379-385. DOI: 10.1016/J.Ssi.2010.01.020 |
0.681 |
|
| 2010 |
Lalonde AD, Moran PD. Synthesis and characterization of p-Type Pb 0.5Sn 0.5Te thermoelectric power generation elements by mechanical alloying Journal of Electronic Materials. 39: 8-14. DOI: 10.1007/S11664-009-0989-7 |
0.712 |
|
| 2010 |
Krishna L, Sunder M, Moran PD. Growth of epitaxial (110) 0.7Pb(Mg 1/3Nb 2/3)O 3-0.3PbTiO 3 thin films on r-plane sapphire substrates by rf magnetron sputtering Journal of Electronic Materials. 39: 132-137. DOI: 10.1007/S11664-009-0945-6 |
0.759 |
|
| 2009 |
Seguin D, Sunder M, Krishna L, Tatarenko A, Moran PD. Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures Journal of Crystal Growth. 311: 3235-3238. DOI: 10.1016/J.Jcrysgro.2009.03.020 |
0.751 |
|
| 2009 |
Sunder M, Moran PD. How r-plane Al 2O 3 surface modifications impact the growth of epitaxial (001) CeO 2 thin films Journal of Electronic Materials. 38: 1931-1937. DOI: 10.1007/S11664-009-0864-6 |
0.75 |
|
| 2007 |
Moran PD, Chen A, Tangtrakarn N, Lawrence M, Bakhru S, Bakhru H. He ion implantation and the refractive index depth profile in relaxor ferroelectric optical waveguides Journal of Electronic Materials. 36: 1724-1731. DOI: 10.1007/S11664-007-0240-3 |
0.684 |
|
| 2006 |
Tangtrakam N, Swanson M, Moran P, Kuebler J, Kapat J, Orlovskaya N. Sintering Behavior and Phase Characterisation of Composite Perovskite/Fluorite Ceramics for Intermediate Temperature SOFCs and Oxygen Separation Membranes Mrs Proceedings. 972. DOI: 10.1557/Proc-0972-Aa03-07 |
0.703 |
|
| 2004 |
Yang HC, Levy M, Li R, Moran PD, Gutierrez CJ, Bandyopadhyay AK. Linear birefringence control and magnetization in sputter-deposited magnetic garnet films Ieee Transactions On Magnetics. 40: 3533-3537. DOI: 10.1109/TMAG.2004.836739 |
0.385 |
|
| 2003 |
Levy M, Moran PD. Optical and Crystallographic Studies of Ion-Implanted Relaxor Ferroelectric Lead Zinc Niobate for Single-Crystal Layer Transfer Mrs Proceedings. 768. DOI: 10.1557/Proc-768-G4.5 |
0.426 |
|
| 2002 |
Feng Z, Lovell EG, Engelstad RL, Moran PD, Kuech TF. Stress generation and relaxation during film heteroepitaxy on a compliant substrate with a viscoelastic glass interlayer Materials Research Society Symposium - Proceedings. 696: 81-86. DOI: 10.1557/Proc-696-N3.19 |
0.491 |
|
| 2001 |
Moran PD, Kuech TF. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates Journal of Electronic Materials. 30: 802-806. DOI: 10.1007/S11664-001-0060-9 |
0.372 |
|
| 2000 |
Hansen DM, Moran PD, Kuech TF. Low-pressure chemical vapor deposition of borosilicate glasses and their application to wafer bonding Materials Research Society Symposium - Proceedings. 587. DOI: 10.1557/Proc-587-O4.7 |
0.444 |
|
| 2000 |
Moran PD, Hansen DM, Matyi RJ, Mawst LJ, Kuech TF. Experimental test for elastic compliance during growth on glass-bonded compliant substrates Applied Physics Letters. 76: 2541-2543. |
0.664 |
|
| 2000 |
Matyi RJ, Moran PD, Hagquist WWD, Volz HM. Alignment system for crossed parabolic x-ray mirrors Review of Scientific Instruments. 71: 2292-2295. |
0.491 |
|
| 2000 |
Hansen DM, Charters D, Au YL, Mak WK, Tejasukmana W, Moran PD, Kuech TF. Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate Journal of Electronic Materials. 29: 1312-1318. |
0.452 |
|
| 1999 |
Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures Journal of the Electrochemical Society. 146: 3506-3509. DOI: 10.1149/1.1392505 |
0.553 |
|
| 1999 |
Moran PD, Hansen DM, Matyi RJ, Cederberg JG, Mawst LJ, Kuech TF. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality Applied Physics Letters. 75: 1559-1561. |
0.675 |
|
| 1998 |
Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate Journal of Crystal Growth. 195: 144-150. DOI: 10.1016/S0022-0248(98)00579-X |
0.572 |
|
| 1994 |
Wade JK, Moran PD, Gillespie HJ, Crook GE, Matyi RJ. Stability of GaAs/Si superlattices during MBE growth and post-growth annealing Materials Research Society Symposium Proceedings. 326: 133-138. |
0.532 |
|
| 1993 |
Moran PD, Matyi RJ. On the X‐ray reflectivity of absorbing crystals Acta Crystallographica Section A. 49: 330-335. DOI: 10.1107/S0108767392009012 |
0.551 |
|
| 1992 |
Moran PD, Matyi RJ. Effect of absorption on the integrated reflectivity of defective single crystals Journal of Applied Crystallography. 25: 358-365. DOI: 10.1107/S0021889891014048 |
0.564 |
|
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