Nelson Tansu - Publications

Affiliations: 
Electrical Engineering Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering

184 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Goodrich JC, Borovac D, Tan CK, Tansu N. Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports. 9: 5128. PMID 30914672 DOI: 10.1038/s41598-019-41286-y  1
2018 Fragkos IE, Tansu N. Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides. Scientific Reports. 8: 13365. PMID 30190586 DOI: 10.1038/s41598-018-31821-8  1
2018 Zeng G, Yang X, Tan CK, Marvel CJ, Koel BE, Tansu N, Krick BA. Shear-Induced Changes of Electronic Properties in Gallium Nitride. Acs Applied Materials & Interfaces. PMID 29954172 DOI: 10.1021/acsami.8b02271  1
2018 Borovac D, Tan CK, Tansu N. First-Principle Study of the Optical Properties of Dilute-P GaNP Alloys. Scientific Reports. 8: 6025. PMID 29662131 DOI: 10.1038/s41598-018-24384-1  1
2018 Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/s41598-018-21434-6  1
2018 Zeng G, Sun W, Song R, Tansu N, Krick BA. Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580. PMID 29396471 DOI: 10.1038/s41598-018-19513-9  1
2017 Borovac D, Tan CK, Tansu N. Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports. 7: 17285. PMID 29229949 DOI: 10.1038/s41598-017-17504-w  1
2017 Fragkos IE, Dierolf V, Fujiwara Y, Tansu N. Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes. Scientific Reports. 7: 16773. PMID 29196749 DOI: 10.1038/s41598-017-17033-6  1
2017 Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N. Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports. 7: 14648. PMID 29116197 DOI: 10.1038/s41598-017-15302-y  1
2017 Zeng G, Sun W, Song R, Tansu N, Krick BA. Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 7: 14126. PMID 29074963 DOI: 10.1038/s41598-017-14234-x  1
2017 Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/s41598-017-12125-9  1
2017 Huang Y, Badar M, Nitkowski A, Weinroth A, Tansu N, Zhou C. Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device. Biomedical Optics Express. 8: 3856-3867. PMID 28856055 DOI: 10.1364/BOE.8.003856  0.76
2017 Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/s41598-017-06889-3  1
2016 Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/srep24412  1
2016 Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/srep22983  1
2016 Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/srep22215  1
2016 Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/srep19271  1
2016 Zeng G, Tan CK, Tansu N, Krick BA. Ultralow wear of gallium nitride Applied Physics Letters. 109. DOI: 10.1063/1.4960375  1
2016 Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944  1
2016 Wierer JJ, Tansu N, Fischer AJ, Tsao JY. III-nitride quantum dots for ultra-efficient solid-state lighting Laser and Photonics Reviews. 10: 612-622. DOI: 10.1002/lpor.201500332  1
2015 Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692  1
2015 Zhu P, Tansu N. Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. Applied Optics. 54: 6305-12. PMID 26193408 DOI: 10.1364/AO.54.006305  1
2015 Jagota M, Tansu N. Conductivity of Nanowire Arrays under Random and Ordered Orientation Configurations. Scientific Reports. 5: 10219. PMID 25976936 DOI: 10.1038/srep10219  1
2015 Tan CK, Tansu N. Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology. 10: 107-9. PMID 25599192 DOI: 10.1038/nnano.2014.333  1
2015 Zhu P, Tansu N. Effect of packing density and packing geometry on light extraction of iii-nitride light-emitting diodes with microsphere arrays Photonics Research. 3: 184-191. DOI: 10.1364/PRJ.3.000184  1
2015 Tansu N, So F. Special Section Guest Editorial:Solid-State Lighting: Photonics and Technologies Journal of Photonics For Energy. 5. DOI: 10.1117/1.JPE.5.057601  1
2015 Tansu N, Tan CK, Wierer JJ. Tutorial on III-Nitride solid state lighting and smart lighting 2015 Ieee Photonics Conference, Ipc 2015. 26-27. DOI: 10.1109/IPCon.2015.7323753  1
2015 Sun W, Tan CK, Tansu N. Artificially-engineered InGaN-based digital alloy for optoelectronics 2015 Ieee Photonics Conference, Ipc 2015. 519-520. DOI: 10.1109/IPCon.2015.7323675  1
2015 Tan CK, Tansu N. Dilute-As AlNAs semiconductor for ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 521-522. DOI: 10.1109/IPCon.2015.7323584  1
2015 Tan CK, Tansu N. Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 577-578. DOI: 10.1109/IPCon.2015.7323494  1
2015 Tan CK, Tansu N. Auger recombination rates in dilute-As GaNAs semiconductor Aip Advances. 5. DOI: 10.1063/1.4921394  1
2015 Tan CK, Tansu N. First-principle natural band alignment of GaN / dilute-As GaNAs alloy Aip Advances. 5. DOI: 10.1063/1.4906569  1
2014 Horng RH, Lau KM, Kuo HC, Tansu N. Solid-state lighting with high brightness, high efficiency, and low cost International Journal of Photoenergy. 2014. DOI: 10.1155/2014/278263  1
2013 Banerjee PP, Evans DR, Lee W, Reshetnyak VY, Tansu N. Hybrid organic-inorganic materials for novel photonic applications. Applied Optics. 52: HM1-3. PMID 23913093 DOI: 10.1364/AO.52.000HM1  1
2013 Banerjee PP, Evans DR, Lee W, Reshetnyak VY, Tansu N. Hybrid organic-inorganic materials for photonic applications Optical Materials Express. 3: 1149-1151. DOI: 10.1364/OME.3.001149  1
2013 Liu G, Zhang J, Tan CK, Tansu N. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes Ieee Photonics Journal. 5. DOI: 10.1109/JPHOT.2013.2255028  1
2013 Zhang J, Tansu N. Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers Ieee Photonics Journal. 5. DOI: 10.1109/JPHOT.2013.2248705  1
2013 Zhang J, Tansu N. Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates Ieee Photonics Journal. 5. DOI: 10.1109/JPHOT.2013.2247587  1
2013 Tansu N, So F, Pei Q. Guest editorial recent advances in solid state lighting Ieee/Osa Journal of Display Technology. 9: 187-189. DOI: 10.1109/JDT.2013.2252962  1
2013 Zhao H, Jiao X, Tansu N. Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 199-206. DOI: 10.1109/JDT.2013.2250480  1
2013 Zhu P, Liu G, Zhang J, Tansu N. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays Ieee/Osa Journal of Display Technology. 9: 317-323. DOI: 10.1109/JDT.2013.2250253  1
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/JDT.2013.2250252  1
2013 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605  1
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells 2013 Conference On Lasers and Electro-Optics, Cleo 2013 1
2012 Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633  1
2012 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271. DOI: 10.1109/JPHOT.2012.2230251  1
2012 Tan CK, Zhang J, Li XH, Liu G, Tansu N. Dilute-As GaNAs semiconductor for visible emitters 2012 Ieee Photonics Conference, Ipc 2012. 695-696. DOI: 10.1109/IPCon.2012.6358812  1
2012 Zhang J, Tansu N. Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates 2012 Ieee Photonics Conference, Ipc 2012. 604-605. DOI: 10.1109/IPCon.2012.6358766  1
2012 Zhu P, Zhang J, Liu G, Tansu N. FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays 2012 Ieee Photonics Conference, Ipc 2012. 433-434. DOI: 10.1109/IPCon.2012.6358678  1
2012 Liu G, Zhang J, Tan CK, Tansu N. Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers 2012 Ieee Photonics Conference, Ipc 2012. 431-432. DOI: 10.1109/IPCon.2012.6358677  1
2012 Koo WH, Youn W, Zhu P, Li XH, Tansu N, So F. Light extraction of organic light emitting diodes by defective hexagonal-close-packed array Advanced Functional Materials. 22: 3454-3459. DOI: 10.1002/adfm.201200876  1
2012 Zhang J, Tong H, Liu G, Tansu N. III-nitride based thermoelectric - current status and future potential Asia Communications and Photonics Conference, Acp 2012 1
2012 Zhao H, Jiao X, Tansu N. Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes Asia Communications and Photonics Conference, Acp 1
2012 Tansu N, Zhang J, Liu G, Zhao H, Tan CK, Zhu P. Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes Asia Communications and Photonics Conference, Acp 2012 1
2012 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012 1
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571  1
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342  1
2011 Zhang J, Tong H, Herbsommer JA, Tansu N. Analysis of thermoelectric properties of AlInN semiconductor alloys Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.875995  1
2011 Li XH, Ee YK, Song R, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875980  1
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875125  1
2011 Zhang J, Zhao H, Tansu N. Gain characteristics of deep UV AlGaN quantum wells lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875079  1
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875002  1
2011 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683. DOI: 10.1109/PHO.2011.6110733  1
2011 Tansu N, Zhang J, Zhao H. Physics of novel III-nitride gain media for visible and ultraviolet lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 509-510. DOI: 10.1109/PHO.2011.6110645  1
2011 Zhang J, Tansu N. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes Journal of Applied Physics. 110. DOI: 10.1063/1.3668117  1
2011 Zhang J, Kutlu S, Liu G, Tansu N. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3624761  1
2011 Zhang J, Zhao H, Tansu N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Applied Physics Letters. 98. DOI: 10.1063/1.3583442  1
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628  1
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents Journal of Applied Physics. 109. DOI: 10.1063/1.3553880  1
2011 Zhang J, Zhao H, Tansu N. High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers Optics Infobase Conference Papers 1
2011 Liu G, Zhao H, Zhang J, Tansu N. Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression Optics Infobase Conference Papers 1
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011 1
2011 Li XH, Ee YK, Song R, Tansu N. Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011 1
2011 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells Optics Infobase Conference Papers 1
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells Optics Infobase Conference Papers 1
2010 Liu G, Zhao H, Tansu N. Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.843054  1
2010 Li XH, Tong H, Zhao H, Tansu N. Band structure calculation of dilute-As GaNAs by first principle Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.842931  1
2010 Zhao H, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617. DOI: 10.1117/12.842742  1
2010 Tong H, Zhang J, Zhao H, Liu G, Handara VA, Herbsommer JA, Tansu N. Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842509  1
2010 Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/PHOTONICS.2010.5698997  1
2010 Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 532-533. DOI: 10.1109/PHOTONICS.2010.5698996  1
2010 Zhang J, Zhao H, Tansu N. Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 63-64. DOI: 10.1109/PHOTONICS.2010.5698758  1
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/JPHOT.2010.2045887  1
2010 Zhao H, Liu G, Tansu N. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3493188  1
2010 Zhang J, Zhao H, Tansu N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. 97. DOI: 10.1063/1.3488825  1
2010 Sun G, Ding YJ, Liu G, Huang GS, Zhao H, Tansu N, Khurgin JB. Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells Applied Physics Letters. 97. DOI: 10.1063/1.3462324  1
2010 Zhao H, Tansu N. Optical gain characteristics of staggered InGaN quantum wells lasers Journal of Applied Physics. 107. DOI: 10.1063/1.3407564  1
2010 Zhao H, Liu G, Arif RA, Tansu N. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Solid-State Electronics. 54: 1119-1124. DOI: 10.1016/j.sse.2010.05.019  1
2010 Liu G, Zhao H, Park JH, Mawst LJ, Tansu N. Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns Optics Infobase Conference Papers 1
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express. 17: 13747-57. PMID 19654782 DOI: 10.1364/OE.17.013747  1
2009 Tong H, Zhao H, Handara VA, Herbsommer JA, Tansu N. Analysis of Thermoelectric Characteristics of AlGaN and InGaN Semiconductors Proceedings of Spie - the International Society For Optical Engineering. 7211. DOI: 10.1117/12.809079  1
2009 Zhao H, Tong H, Driscoll AM, Jamil M, Huang GS, Tansu N. Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.808695  1
2009 Zhao H, Arif RA, Tansu N. Staggered InGaN quantum well diode lasers emitting at 500 nm Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.808561  1
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  1
2009 Tansu N, Schubert EF, Kuo HC, Smowton PM. Introduction to the issue on solid-state lighting Ieee Journal On Selected Topics in Quantum Electronics. 15: 1025-1027. DOI: 10.1109/JSTQE.2009.2021694  1
2009 Ee YK, Biser JM, Cao W, Chan HM, Vinci RP, Tansu N. Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode Ieee Journal On Selected Topics in Quantum Electronics. 15: 1066-1072. DOI: 10.1109/JSTQE.2009.2017208  1
2009 Zhao H, Arif RA, Tansu N. Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm Ieee Journal On Selected Topics in Quantum Electronics. 15: 1104-1114. DOI: 10.1109/JSTQE.2009.2016576  1
2009 Zhao H, Arif RA, Ee YK, Tansu N. Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes Ieee Journal of Quantum Electronics. 45: 66-78. DOI: 10.1109/JQE.2008.2004000  1
2009 Zhao H, Liu G, Arif RA, Tansu N. Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378014  1
2009 Ee YK, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode Optics Infobase Conference Papers 1
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers 1
2009 Zhao H, Liu G, Li X, Huang GS, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 1
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers 1
2008 Kumnorkaew P, Ee YK, Tansu N, Gilchrist JF. Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 12150-7. PMID 18533633 DOI: 10.1021/la801100g  1
2008 Tansu N, Arif RA, Zhao H, Huang GS, Ee YK. Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7058. DOI: 10.1117/12.802482  1
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.763804  1
2008 Arif RA, Zhao H, Ee YK, Tansu N. Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763362  1
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Nonlinear power dependence for efficient THz generation from InGaN/GaN multiple quantum wells Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 788-789. DOI: 10.1109/LEOS.2008.4688857  1
2008 Arif RA, Zhao H, Ee YK, Tansu N. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 44: 573-580. DOI: 10.1109/JQE.2008.918309  1
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Optimization and fabrication of III-nitride light emitting diodes with self-assembled colloidal-based convex microlens arrays 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781319  1
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Observation of enhanced THz emission from InGaN/GaN multiple quantum wells Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551802  1
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Size effects and light extraction efficiency optimization of III-nitride light emitting diodes with SiO2 / polystyrene microlens arrays 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551237  1
2008 Arif RA, Zhao H, Tansu N. InGaN-GaNAs type-II 'W' quantum well lasers for emission at 450-nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551201  1
2008 Zhao H, Arif RA, Huang GS, Ee YK, Tansu N. Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551199  1
2008 Arif RA, Zhao H, Ee YK, Penn ST, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551108  1
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Jamil M, Arif RA, Tansu N. Resonant Raman scattering of coherent picosecond pulses by one and two longitudinal-optical phonons in GaN film grown on silicon (111) substrate Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551067  1
2008 Zhao H, Arif RA, Tansu N. Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers Journal of Applied Physics. 104. DOI: 10.1063/1.2970107  1
2008 Arif RA, Zhao H, Tansu N. Type-II InGaN-GaNAs quantum wells for lasers applications Applied Physics Letters. 92. DOI: 10.1063/1.2829600  1
2008 Jamil M, Zhao H, Higgins JB, Tansu N. Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE Journal of Crystal Growth. 310: 4947-4953. DOI: 10.1016/j.jcrysgro.2008.07.122  1
2008 Ee YK, Zhao H, Arif RA, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 310: 2320-2325. DOI: 10.1016/j.jcrysgro.2007.12.022  1
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm Optical and Quantum Electronics. 40: 301-306. DOI: 10.1007/s11082-007-9177-2  1
2008 Jamil M, Zhao H, Higgins JB, Tansu N. MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode Physica Status Solidi (a) Applications and Materials Science. 205: 2886-2891. DOI: 10.1002/pssa.200824136  1
2008 Arif RA, Ee YK, Tansu N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm Physica Status Solidi (a) Applications and Materials Science. 205: 96-100. DOI: 10.1002/pssa.200777478  1
2008 Jamil M, Arif RA, Ee YK, Tong H, Higgins JB, Tansu N. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates Physica Status Solidi (a) Applications and Materials Science. 205: 1619-1624. DOI: 10.1002/pssa.200723591  1
2008 Arif RA, Zhao H, Ee YK, Tafon Penn S, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered ingan quantum wells light emitting diodes Optics Infobase Conference Papers 1
2007 Ee YK, Gupta YP, Arif RA, Tansu N. Quantum 3-D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum dots nanostructures Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700775  1
2007 Arif RA, Tummidi RS, Yik KE, Tansu N. Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the mid-IR regime Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700767  1
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm 2007 International Conference On Numerical Simulation of Semiconductor Optoelectronic Devices - Nusod'07. 69-70. DOI: 10.1109/NUSOD.2007.4349028  1
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 376-377. DOI: 10.1109/LEOS.2007.4382435  1
2007 Ee YK, Kumnorkaew P, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells LEDs using SiO2 microspheres Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453005  1
2007 Arif RA, Ee YK, Tansu N. Enhancement of radiative efficiency of nitride-based LEDs via staggered InGaN quantum wells emitting at 420-500 nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452515  1
2007 Ee YK, Arif RA, Jamil M, Tansu N. MOCVD epitaxy and optical properties of self-assembled InGaN quantum dots via Stranski-Kastranow growth mode emitting at 520-nm Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452499  1
2007 Ee YK, Arif RA, Tansu N, Kumnorkaew P, Gilchrist JF. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays Applied Physics Letters. 91. DOI: 10.1063/1.2816891  1
2007 Arif RA, Ee YK, Tansu N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2775334  1
2006 Arif RA, Ee YK, Tansu N. Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.646174  1
2006 Jin Z, Tansu N. Novel approach for efficient mid-infrared coherent emitters based on continuously-phase-matched 'W' optical waveguide Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.646114  1
2006 Jin Z, Tummidi RS, Gupta YP, Schindler DM, Tansu N. Quasi-guided-optical-waveguide VCSELs for single-mode high-power applications Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628424  1
2006 Arif RA, Ee YK, Tansu N. Polarization field engineering with type-II InGaN-GaNAs quantum well for improved nitride gain media at 420-550 nm Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628309  1
2006 Arif RA, Tansu N. Interdiffused SbN-based quantum well on GaAs for 1300-1550 nm diode lasers Materials Research Society Symposium Proceedings. 891: 559-564.  1
2006 Arif RA, Kim NH, Mawst LJ, Tansu N. Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition Materials Research Society Symposium Proceedings. 891: 65-70.  1
2006 Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers Optics Infobase Conference Papers 1
2005 Mawst LJ, Yeh JY, Van Roy T, Tansu N. Characteristics of MOCVD-grown dilute-nitride quantum well lasers Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 192-203. DOI: 10.1117/12.597123  1
2005 Arif RA, Tansu N. Interdiffused InGaAsSbN quantum wells on GaAs for 1300-1550 nm lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 171-182. DOI: 10.1117/12.591023  1
2005 Yeh JY, Mawst LJ, Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781. DOI: 10.1109/LPT.2005.852331  1
2005 Shterengas L, Belenky GL, Yeh JY, Mawst LJ, Tansu N. Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068. DOI: 10.1109/JSTQE.2005.853736  1
2005 Tansu N, Mawst LJ. Current injection efficiency of InGaAsN quantum-well lasers Journal of Applied Physics. 97. DOI: 10.1063/1.1852697  1
2005 Mawst LJ, Yeh JY, Tansu N. Characteristics of dilute-nitride quantum well lasers 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 98-100.  1
2005 Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 101-103.  1
2004 Yeh JY, Tansu N, Mawst LJ. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers Ieee Photonics Technology Letters. 16: 741-743. DOI: 10.1109/LPT.2004.823715  1
2004 Tansu N, Yeh JY, Mawst LJ. Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/020  1
2004 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers Journal of Applied Physics. 96: 4653-4655. DOI: 10.1063/1.1794898  1
2004 Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm Electronics Letters. 40: 739-741. DOI: 10.1049/el:20040474  1
2004 Yeh JY, Mawst LJ, Tansu N. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Journal of Crystal Growth. 272: 719-725. DOI: 10.1016/j.jcrysgro.2004.09.005  1
2004 Yeh JY, Tansu N, Mawst LJ. Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well Journal of Crystal Growth. 265: 1-7. DOI: 10.1016/j.jcrysgro.2004.01.022  1
2004 Yeh JY, Mawst LJ, Tansu N. Carrier transport and injection efficiency of InGaAsN quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 693-694.  1
2004 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates Osa Trends in Optics and Photonics Series. 96: 621-623.  1
2004 Shterengas L, Yeh JY, Mawst LJ, Tansu N, Belenky G. Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers Osa Trends in Optics and Photonics Series. 96: 615-616.  1
2004 Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 697-698.  1
2004 Anton O, Patel D, Menoni CS, Yeh JY, Mawst L, Pikal JM, Tansu N. Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (λ=1.2-1.3μm) lasers Osa Trends in Optics and Photonics Series. 96: 607-610.  1
2003 Mawst LJ, Tansu N, Yeh JY. MOCVD-Grown InGaAsN Quantum-Well Lasers Proceedings of Spie - the International Society For Optical Engineering. 4995: 39-53. DOI: 10.1117/12.475793  1
2003 Tansu N, Yeh JY, Mawst LJ. High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition Ieee Journal On Selected Topics in Quantum Electronics. 9: 1220-1227. DOI: 10.1109/JSTQE.2003.820911  1
2003 Tansu N, Mawst LJ. Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions Ieee Journal of Quantum Electronics. 39: 1205-1210. DOI: 10.1109/JQE.2003.817235  1
2003 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm Applied Physics Letters. 83: 2742-2744. DOI: 10.1063/1.1616193  1
2003 Tansu N, Yeh JY, Mawst LJ. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers Applied Physics Letters. 83: 2512-2514. DOI: 10.1063/1.1613998  1
2003 Tansu N, Yeh JY, Mawst LJ. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers Applied Physics Letters. 83: 2112-2114. DOI: 10.1063/1.1611279  1
2003 Tansu N, Quandt A, Kanskar M, Mulhearn W, Mawst LJ. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy Applied Physics Letters. 83: 18-20. DOI: 10.1063/1.1591238  1
2003 Tansu N, Yeh JY, Mawst LJ. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm Applied Physics Letters. 82: 4038-4040. DOI: 10.1063/1.1581978  1
2003 Tansu N, Yeh JY, Mawst LJ. Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing Applied Physics Letters. 82: 3008-3010. DOI: 10.1063/1.1572470  1
2003 Tansu N, Mawst LJ. The role of hole leakage in 1300-nm InGaAsN quantum-well lasers Applied Physics Letters. 82: 1500-1502. DOI: 10.1063/1.1558218  1
2003 Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 269-272.  1
2003 Yeh JY, Tansu N, Mawst LJ. Temperature sensitivity of 1360 nm InGaAsN quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 41-42.  1
2003 Tansu N, Yeh JY, Mawst LJ. Carrier confinement in 1300-nm InGaAsN quantum-well lasers Osa Trends in Optics and Photonics Series. 88: 526-527.  1
2003 Tansu N, Mawst LJ, Vurgaftman I, Meyer JR. GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 37-38.  1
2002 Tansu N, Mawst LJ. Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers Proceedings of Spie - the International Society For Optical Engineering. 4646: 302-312. DOI: 10.1117/12.470529  1
2002 Tansu N, Mawst LJ. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 14: 1052-1054. DOI: 10.1109/LPT.2002.1021966  1
2002 Tansu N, Mawst LJ. Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers Ieee Photonics Technology Letters. 14: 444-446. DOI: 10.1109/68.992572  1
2002 Tansu N, Kirsch NJ, Mawst LJ. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers Applied Physics Letters. 81: 2523-2525. DOI: 10.1063/1.1511290  1
2002 Tansu N, Mawst LJ. Temperature sensitivity analysis of high-performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum well lasers Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 269.  1
2002 Tansu N, Mawst LJ. High performance 1300-nm dilute-nitride quantum well lasers by MOCVD Conference Digest - Ieee International Semiconductor Laser Conference. 33-34.  1
2001 Tansu N, Mawst LJ. InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs Proceedings of Spie - the International Society For Optical Engineering. 4287: 188-194. DOI: 10.1117/12.429800  1
2001 Tansu N, Mawst LJ. High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers Ieee Photonics Technology Letters. 13: 179-181. DOI: 10.1109/68.914313  1
2001 Zhou D, Lee TW, Tansu N, Hagness S, Mawst LJ. Large spot-size narrow waveguide VCSEL Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 469-470.  1
2000 Tansu N, Zhou D, Mawst LJ. Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers Ieee Photonics Technology Letters. 12: 603-605. DOI: 10.1109/68.849057  1
1999 Tansu N, Zhou D, Rusli S, Mawst LJ. Compressively-strained InGaAsP-active (λ = 0.78-0.85 μm) regions for VCSELs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 397-398.  1
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