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Nelson Tansu - Publications

Affiliations: 
Electrical Engineering Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering
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Year Citation  Score
2020 Borovac D, Sun W, Tan C, Tansu N. Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103. DOI: 10.1063/1.5119371  0.703
2020 Ogidi-Ekoko ON, Goodrich JC, Howzen AJ, Peart MR, Strandwitz NC, Wierer JJ, Tansu N. Electrical Properties of MgO/GaN Metal-Oxide-Semiconductor Structures Solid-State Electronics. 107881. DOI: 10.1016/J.Sse.2020.107881  0.365
2020 Borovac D, Sun W, Peart MR, Song R, Wierer JJ, Tansu N. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847. DOI: 10.1016/J.Jcrysgro.2020.125847  0.637
2020 Al Muyeed SA, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates Journal of Crystal Growth. 540: 125652. DOI: 10.1016/J.Jcrysgro.2020.125652  0.673
2020 Borovac D, Sun W, Song R, Wierer JJ, Tansu N. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469. DOI: 10.1016/J.Jcrysgro.2019.125469  0.596
2020 Sun W, Kim H, Mawst LJ, Tansu N. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381. DOI: 10.1016/J.Jcrysgro.2019.125381  0.567
2019 Goodrich JC, Borovac D, Tan CK, Tansu N. Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports. 9: 5128. PMID 30914672 DOI: 10.1038/S41598-019-41286-Y  0.701
2019 Al Muyeed SA, Sun W, Peart MR, Lentz RM, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106. DOI: 10.1063/1.5126965  0.675
2019 Fu H, Goodrich JC, Ogidi-Ekoko O, Tansu N. Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes Journal of Applied Physics. 126: 133103. DOI: 10.1063/1.5120302  0.492
2019 Fu H, Sun W, Ogidi-Ekoko O, Goodrich JC, Tansu N. Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013. DOI: 10.1063/1.5086979  0.563
2019 Wierer JJ, Tansu N. III‐Nitride Micro‐LEDs for Efficient Emissive Displays Laser & Photonics Reviews. 13: 1900141. DOI: 10.1002/Lpor.201900141  0.322
2018 Fragkos IE, Tansu N. Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides. Scientific Reports. 8: 13365. PMID 30190586 DOI: 10.1038/S41598-018-31821-8  0.827
2018 Zeng G, Yang X, Tan CK, Marvel CJ, Koel BE, Tansu N, Krick BA. Shear-Induced Changes of Electronic Properties in Gallium Nitride. Acs Applied Materials & Interfaces. PMID 29954172 DOI: 10.1021/Acsami.8B02271  0.78
2018 Borovac D, Tan CK, Tansu N. First-Principle Study of the Optical Properties of Dilute-P GaNP Alloys. Scientific Reports. 8: 6025. PMID 29662131 DOI: 10.1038/S41598-018-24384-1  0.7
2018 Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6  0.726
2018 Zeng G, Sun W, Song R, Tansu N, Krick BA. Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580. PMID 29396471 DOI: 10.1038/S41598-018-19513-9  0.75
2018 Peart MR, Tansu N, Wierer JJ. AlInN for Vertical Power Electronic Devices Ieee Transactions On Electron Devices. 65: 4276-4281. DOI: 10.1109/Ted.2018.2866980  0.329
2018 Wei X, Al Muyeed SA, Peart MR, Sun W, Tansu N, Wierer JJ. Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106. DOI: 10.1063/1.5046857  0.532
2018 Borovac D, Tan C, Tansu N. First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor Aip Advances. 8: 085119. DOI: 10.1063/1.5036978  0.699
2018 Sun W, Al Muyeed SA, Song R, Wierer JJ, Tansu N. Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission Applied Physics Letters. 112: 201106. DOI: 10.1063/1.5028257  0.625
2018 Zeng G, Tansu N, Krick BA. Moisture dependent wear mechanisms of gallium nitride Tribology International. 118: 120-127. DOI: 10.1016/J.Triboint.2017.09.018  0.743
2017 Borovac D, Tan CK, Tansu N. Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports. 7: 17285. PMID 29229949 DOI: 10.1038/S41598-017-17504-W  0.703
2017 Fragkos IE, Dierolf V, Fujiwara Y, Tansu N. Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes. Scientific Reports. 7: 16773. PMID 29196749 DOI: 10.1038/S41598-017-17033-6  0.832
2017 Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N. Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports. 7: 14648. PMID 29116197 DOI: 10.1038/S41598-017-15302-Y  0.836
2017 Zeng G, Sun W, Song R, Tansu N, Krick BA. Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 7: 14126. PMID 29074963 DOI: 10.1038/S41598-017-14234-X  0.783
2017 Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/S41598-017-12125-9  0.775
2017 Huang Y, Badar M, Nitkowski A, Weinroth A, Tansu N, Zhou C. Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device. Biomedical Optics Express. 8: 3856-3867. PMID 28856055 DOI: 10.1364/Boe.8.003856  0.3
2017 Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/S41598-017-06889-3  0.733
2017 Al Muyeed SA, Sun W, Wei X, Song R, Koleske DD, Tansu N, Wierer JJ. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers Aip Advances. 7: 105312. DOI: 10.1063/1.5000519  0.631
2017 Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777  0.771
2016 Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/Srep24412  0.719
2016 Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/Srep22983  0.787
2016 Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/Srep22215  0.721
2016 Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/Srep19271  0.76
2016 Zeng G, Tan CK, Tansu N, Krick BA. Ultralow wear of gallium nitride Applied Physics Letters. 109. DOI: 10.1063/1.4960375  0.779
2016 Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944  0.823
2016 Wierer JJ, Tansu N, Fischer AJ, Tsao JY. III-nitride quantum dots for ultra-efficient solid-state lighting Laser and Photonics Reviews. 10: 612-622. DOI: 10.1002/Lpor.201500332  0.549
2015 Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692 DOI: 10.1364/Ao.54.010299  0.817
2015 Zhu P, Tansu N. Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. Applied Optics. 54: 6305-12. PMID 26193408 DOI: 10.1364/Ao.54.006305  0.726
2015 Jagota M, Tansu N. Conductivity of Nanowire Arrays under Random and Ordered Orientation Configurations. Scientific Reports. 5: 10219. PMID 25976936 DOI: 10.1038/Srep10219  0.766
2015 Tan CK, Tansu N. Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology. 10: 107-9. PMID 25599192 DOI: 10.1038/Nnano.2014.333  0.766
2015 Zhu P, Tansu N. Effect of packing density and packing geometry on light extraction of iii-nitride light-emitting diodes with microsphere arrays Photonics Research. 3: 184-191. DOI: 10.1364/Prj.3.000184  0.727
2015 Tansu N, So F. Special Section Guest Editorial:Solid-State Lighting: Photonics and Technologies Journal of Photonics For Energy. 5. DOI: 10.1117/1.Jpe.5.057601  0.309
2015 Kafafi ZH, Martín-Palma RJ, Nogueira AF, O'Carroll DM, Pietron JJ, Samuel IDW, So F, Tansu N, Tsakalakos L. The role of photonics in energy Journal of Photonics For Energy. 5. DOI: 10.1117/1.Jpe.5.050997  0.343
2015 Tansu N, Tan CK, Wierer JJ. Tutorial on III-Nitride solid state lighting and smart lighting 2015 Ieee Photonics Conference, Ipc 2015. 26-27. DOI: 10.1109/IPCon.2015.7323753  0.711
2015 Sun W, Tan CK, Tansu N. Artificially-engineered InGaN-based digital alloy for optoelectronics 2015 Ieee Photonics Conference, Ipc 2015. 519-520. DOI: 10.1109/IPCon.2015.7323675  0.668
2015 Tan CK, Tansu N. Dilute-As AlNAs semiconductor for ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 521-522. DOI: 10.1109/IPCon.2015.7323584  0.708
2015 Tan CK, Tansu N. Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 577-578. DOI: 10.1109/IPCon.2015.7323494  0.732
2015 Tan CK, Tansu N. Auger recombination rates in dilute-As GaNAs semiconductor Aip Advances. 5. DOI: 10.1063/1.4921394  0.686
2015 Tan CK, Tansu N. First-principle natural band alignment of GaN / dilute-As GaNAs alloy Aip Advances. 5. DOI: 10.1063/1.4906569  0.726
2014 Tansu N. Photonics—Advances in Fundamental Sciences and Engineering Technologies of Light Photonics. 1: 1-8. DOI: 10.3390/Photonics1010001  0.391
2014 Horng RH, Lau KM, Kuo HC, Tansu N. Solid-state lighting with high brightness, high efficiency, and low cost International Journal of Photoenergy. 2014. DOI: 10.1155/2014/278263  0.319
2013 Zhang J, Tansu N. Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers Ieee Photonics Journal. 5. DOI: 10.1117/12.909165  0.545
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 19: 8400106-8400106. DOI: 10.1109/Jstqe.2012.2218093  0.712
2013 Liu G, Zhang J, Tan CK, Tansu N. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2255028  0.66
2013 Zhang J, Tansu N. Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2247587  0.536
2013 Tansu N, So F, Pei Q. Guest editorial recent advances in solid state lighting Ieee/Osa Journal of Display Technology. 9: 187-189. DOI: 10.1109/Jdt.2013.2252962  0.398
2013 Zhao H, Jiao X, Tansu N. Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 199-206. DOI: 10.1109/Jdt.2013.2250480  0.641
2013 Zhu P, Liu G, Zhang J, Tansu N. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays Ieee/Osa Journal of Display Technology. 9: 317-323. DOI: 10.1109/Jdt.2013.2250253  0.779
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252  0.816
2013 Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342  0.792
2013 Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541  0.821
2013 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605  0.707
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells 2013 Conference On Lasers and Electro-Optics, Cleo 2013.  0.589
2012 Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633  0.745
2012 Xu L, Patel D, Menoni CS, Pikal JM, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells Ieee Photonics Journal. 4: 2382-2389. DOI: 10.1109/Jphot.2012.2233465  0.682
2012 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271. DOI: 10.1109/Jphot.2012.2230251  0.693
2012 Tan CK, Zhang J, Li XH, Liu G, Tansu N. Dilute-As GaNAs semiconductor for visible emitters 2012 Ieee Photonics Conference, Ipc 2012. 695-696. DOI: 10.1109/IPCon.2012.6358812  0.717
2012 Zhang J, Tansu N. Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates 2012 Ieee Photonics Conference, Ipc 2012. 604-605. DOI: 10.1109/IPCon.2012.6358766  0.367
2012 Zhu P, Zhang J, Liu G, Tansu N. FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays 2012 Ieee Photonics Conference, Ipc 2012. 433-434. DOI: 10.1109/IPCon.2012.6358678  0.68
2012 Liu G, Zhang J, Tan CK, Tansu N. Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers 2012 Ieee Photonics Conference, Ipc 2012. 431-432. DOI: 10.1109/IPCon.2012.6358677  0.768
2012 Liu G, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao H, Tansu N. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Journal of Crystal Growth. 340: 66-73. DOI: 10.1016/J.Jcrysgro.2011.12.037  0.67
2012 Koo WH, Youn W, Zhu P, Li X, Tansu N, So F. Light Extraction: Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array (Adv. Funct. Mater. 16/2012) Advanced Functional Materials. 22: 3453-3453. DOI: 10.1002/Adfm.201290095  0.754
2012 Koo WH, Youn W, Zhu P, Li XH, Tansu N, So F. Light extraction of organic light emitting diodes by defective hexagonal-close-packed array Advanced Functional Materials. 22: 3454-3459. DOI: 10.1002/Adfm.201200876  0.776
2012 Zhang J, Tong H, Liu G, Tansu N. III-nitride based thermoelectric - current status and future potential Asia Communications and Photonics Conference, Acp 2012.  0.485
2012 Zhao H, Jiao X, Tansu N. Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes Asia Communications and Photonics Conference, Acp.  0.599
2012 Tansu N, Zhang J, Liu G, Zhao H, Tan CK, Zhu P. Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes Asia Communications and Photonics Conference, Acp 2012.  0.836
2012 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.569
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571 DOI: 10.1364/Oe.19.00A991  0.763
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342  0.781
2011 Zhang J, Tong H, Herbsommer JA, Tansu N. Analysis of thermoelectric properties of AlInN semiconductor alloys Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.875995  0.523
2011 Li XH, Ee YK, Song R, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875980  0.839
2011 Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901  0.845
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875125  0.639
2011 Zhang J, Zhao H, Tansu N. Gain characteristics of deep UV AlGaN quantum wells lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875079  0.661
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN based quantum dots 2011 Ieee Winter Topicals, Wtm 2011. 35-36. DOI: 10.1109/PHOTWTM.2011.5730033  0.673
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1109/Photonics.2010.5698996  0.748
2011 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683. DOI: 10.1109/Pho.2011.6110733  0.701
2011 Tansu N, Zhang J, Zhao H. Physics of novel III-nitride gain media for visible and ultraviolet lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 509-510. DOI: 10.1109/Pho.2011.6110645  0.62
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 17: 48-53. DOI: 10.1109/Jstqe.2010.2049343  0.71
2011 Ferguson JW, Blood P, Smowton PM, Bae H, Sarmiento T, Harris JS, Tansu N, Mawst LJ. Optical gain in GaInNAs and GaInNAsSb quantum wells Optics Infobase Conference Papers. DOI: 10.1109/JQE.2011.2129492  0.51
2011 Li XH, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios Ieee Photonics Journal. 3: 489-499. DOI: 10.1109/Jphot.2011.2150745  0.838
2011 Zhang J, Tansu N. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes Journal of Applied Physics. 110. DOI: 10.1063/1.3668117  0.513
2011 Cao W, Biser JM, Ee YK, Li XH, Tansu N, Chan HM, Vinci RP. Dislocation structure of GaN films grown on planar and nano-patterned sapphire Journal of Applied Physics. 110. DOI: 10.1063/1.3631823  0.754
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of fast and slow decays in InGaN/GaN quantum wells Applied Physics Letters. 99: 081104. DOI: 10.1063/1.3627166  0.71
2011 Zhang J, Kutlu S, Liu G, Tansu N. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3624761  0.518
2011 Zhang J, Zhao H, Tansu N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Applied Physics Letters. 98. DOI: 10.1063/1.3583442  0.663
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628  0.682
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents Journal of Applied Physics. 109. DOI: 10.1063/1.3553880  0.639
2011 Zhang J, Zhao H, Tansu N. High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers Optics Infobase Conference Papers.  0.616
2011 Liu G, Zhao H, Zhang J, Tansu N. Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression Optics Infobase Conference Papers.  0.604
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011.  0.553
2011 Li XH, Ee YK, Song R, Tansu N. Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011.  0.712
2011 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells Optics Infobase Conference Papers.  0.579
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells Optics Infobase Conference Papers.  0.539
2010 Liu G, Zhao H, Tansu N. Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.843054  0.588
2010 Li XH, Tong H, Zhao H, Tansu N. Band structure calculation of dilute-As GaNAs by first principle Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.842931  0.485
2010 Zhao H, Liu G, Ee YK, Li XH, Tong H, Zhang J, Huang GS, Tansu N. Novel device concepts for high-efficiency InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842869  0.832
2010 Zhao H, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617. DOI: 10.1117/12.842742  0.517
2010 Tong H, Zhang J, Zhao H, Liu G, Handara VA, Herbsommer JA, Tansu N. Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842509  0.468
2010 Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617. DOI: 10.1117/12.841503  0.714
2010 Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/Photonics.2010.5698997  0.702
2010 Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 532-533. DOI: 10.1109/PHOTONICS.2010.5698996  0.721
2010 Zhang J, Zhao H, Tansu N. Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 63-64. DOI: 10.1109/Photonics.2010.5698758  0.65
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887  0.811
2010 Xu G, Ding YJ, Zhao H, Liu G, Jamil M, Tansu N, Zotova IB, Stutz CE, Diggs DE, Fernelius N, Hopkins FK, Gallinat CS, Koblmüller G, Speck JS. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015004  0.722
2010 Zhao H, Liu G, Tansu N. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3493188  0.727
2010 Tong H, Zhang J, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition Applied Physics Letters. 97: 112105. DOI: 10.1063/1.3489086  0.633
2010 Zhang J, Zhao H, Tansu N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. 97. DOI: 10.1063/1.3488825  0.647
2010 Sun G, Ding YJ, Liu G, Huang GS, Zhao H, Tansu N, Khurgin JB. Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells Applied Physics Letters. 97. DOI: 10.1063/1.3462324  0.724
2010 Zhao H, Tansu N. Optical gain characteristics of staggered InGaN quantum wells lasers Journal of Applied Physics. 107. DOI: 10.1063/1.3407564  0.663
2010 Zhao H, Liu G, Arif RA, Tansu N. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Solid-State Electronics. 54: 1119-1124. DOI: 10.1016/j.sse.2010.05.019  0.773
2010 Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Journal of Crystal Growth. 312: 1311-1315. DOI: 10.1016/J.Jcrysgro.2009.10.029  0.787
2010 Liu G, Zhao H, Park JH, Mawst LJ, Tansu N. Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns Optics Infobase Conference Papers.  0.662
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express. 17: 13747-57. PMID 19654782 DOI: 10.1364/Oe.17.013747  0.827
2009 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808600  0.819
2009 Zhao H, Arif RA, Tansu N. Staggered InGaN quantum well diode lasers emitting at 500 nm Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.808561  0.788
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  0.852
2009 Tansu N, Schubert EF, Kuo HC, Smowton PM. Introduction to the issue on solid-state lighting Ieee Journal On Selected Topics in Quantum Electronics. 15: 1025-1027. DOI: 10.1109/Jstqe.2009.2021694  0.317
2009 Ee YK, Biser JM, Cao W, Chan HM, Vinci RP, Tansu N. Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode Ieee Journal On Selected Topics in Quantum Electronics. 15: 1066-1072. DOI: 10.1109/Jstqe.2009.2017208  0.756
2009 Zhao H, Arif RA, Tansu N. Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm Ieee Journal On Selected Topics in Quantum Electronics. 15: 1104-1114. DOI: 10.1109/Jstqe.2009.2016576  0.798
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Zhao H, Gilchrist JF, Tansu N. Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses Ieee Journal On Selected Topics in Quantum Electronics. 15: 1218-1225. DOI: 10.1109/Jstqe.2009.2015580  0.821
2009 Zhao H, Arif RA, Ee YK, Tansu N. Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes Ieee Journal of Quantum Electronics. 45: 66-78. DOI: 10.1109/Jqe.2008.2004000  0.841
2009 Zhao H, Liu G, Arif RA, Tansu N. Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378014  0.78
2009 Zhao H, Huang GS, Liu G, Li X, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm Device Research Conference - Conference Digest, Drc. 221-222. DOI: 10.1109/DRC.2009.5354899  0.646
2009 Zhao H, Liu G, Li XH, Huang GS, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile Applied Physics Letters. 95. DOI: 10.1063/1.3204446  0.802
2009 Zhao HP, Liu GY, Li XH, Arif RA, Huang GS, Poplawsky JD, Tafon Penn S, Dierolf V, Tansu N. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime Iet Optoelectronics. 3: 283-295. DOI: 10.1049/Iet-Opt.2009.0050  0.823
2009 Ee YK, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode Optics Infobase Conference Papers.  0.725
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.826
2009 Zhao H, Liu G, Li X, Huang GS, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009.  0.64
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.838
2008 Kumnorkaew P, Ee YK, Tansu N, Gilchrist JF. Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 12150-7. PMID 18533633 DOI: 10.1021/La801100G  0.705
2008 Tansu N, Arif RA, Zhao H, Huang GS, Ee YK. Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7058. DOI: 10.1117/12.802482  0.863
2008 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763973  0.825
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.763804  0.824
2008 Arif RA, Zhao H, Ee YK, Tansu N. Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763362  0.85
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Nonlinear power dependence for efficient THz generation from InGaN/GaN multiple quantum wells Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 788-789. DOI: 10.1109/LEOS.2008.4688857  0.686
2008 Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105  0.837
2008 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers Ieee Journal of Quantum Electronics. 44: 732-739. DOI: 10.1109/Jqe.2008.924242  0.837
2008 Arif RA, Zhao H, Ee YK, Tansu N. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 44: 573-580. DOI: 10.1109/Jqe.2008.918309  0.856
2008 Tansu N, Zhao H, Arif RA, Ee YK, Liu G, Li X, Huang GS. Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781335  0.85
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Optimization and fabrication of III-nitride light emitting diodes with self-assembled colloidal-based convex microlens arrays 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781319  0.808
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Observation of enhanced THz emission from InGaN/GaN multiple quantum wells Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551802  0.728
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Size effects and light extraction efficiency optimization of III-nitride light emitting diodes with SiO2 / polystyrene microlens arrays 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551237  0.836
2008 Arif RA, Zhao H, Tansu N. InGaN-GaNAs type-II 'W' quantum well lasers for emission at 450-nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551201  0.774
2008 Zhao H, Arif RA, Huang GS, Ee YK, Tansu N. Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551199  0.829
2008 Arif RA, Zhao H, Ee YK, Penn ST, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551108  0.853
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Jamil M, Arif RA, Tansu N. Resonant Raman scattering of coherent picosecond pulses by one and two longitudinal-optical phonons in GaN film grown on silicon (111) substrate Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551067  0.631
2008 Hsu CC, Lin JH, Chen YS, Lin YH, Kuo HC, Wang SC, Hsieh WF, Tansu N, Mawst LJ. Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/085107  0.622
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Jamil M, Arif RA, Tansu N, Khurgin JB. Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate Applied Physics Letters. 93. DOI: 10.1063/1.3030883  0.745
2008 Zhao H, Arif RA, Tansu N. Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers Journal of Applied Physics. 104. DOI: 10.1063/1.2970107  0.78
2008 Arif RA, Zhao H, Tansu N. Type-II InGaN-GaNAs quantum wells for lasers applications Applied Physics Letters. 92. DOI: 10.1063/1.2829600  0.772
2008 Jamil M, Zhao H, Higgins JB, Tansu N. Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE Journal of Crystal Growth. 310: 4947-4953. DOI: 10.1016/J.Jcrysgro.2008.07.122  0.633
2008 Ee YK, Zhao H, Arif RA, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 310: 2320-2325. DOI: 10.1016/J.Jcrysgro.2007.12.022  0.844
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm Optical and Quantum Electronics. 40: 301-306. DOI: 10.1007/S11082-007-9177-2  0.83
2008 Jamil M, Zhao H, Higgins JB, Tansu N. MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode Physica Status Solidi (a) Applications and Materials Science. 205: 2886-2891. DOI: 10.1002/Pssa.200824136  0.64
2008 Arif RA, Ee YK, Tansu N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm Physica Status Solidi (a) Applications and Materials Science. 205: 96-100. DOI: 10.1002/Pssa.200777478  0.854
2008 Jamil M, Arif RA, Ee YK, Tong H, Higgins JB, Tansu N. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates Physica Status Solidi (a) Applications and Materials Science. 205: 1619-1624. DOI: 10.1002/Pssa.200723591  0.792
2008 Arif RA, Zhao H, Ee YK, Tafon Penn S, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered ingan quantum wells light emitting diodes Optics Infobase Conference Papers.  0.84
2007 Ee YK, Gupta YP, Arif RA, Tansu N. Quantum 3-D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum dots nanostructures Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700775  0.804
2007 Arif RA, Tummidi RS, Yik KE, Tansu N. Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the mid-IR regime Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700767  0.712
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm 2007 International Conference On Numerical Simulation of Semiconductor Optoelectronic Devices - Nusod'07. 69-70. DOI: 10.1109/NUSOD.2007.4349028  0.836
2007 Ee YK, Arif RA, Tansu N, Li H, Chan HM, Vinci RP, Capek P, Jha NK, Dierolf V. Improved photoluminescence of InGaN quantum wells grown on nano-patterned AGOG sapphire substrate by metalorganie vapor phase epitaxy Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 902-903. DOI: 10.1109/LEOS.2007.4382701  0.814
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 376-377. DOI: 10.1109/LEOS.2007.4382435  0.846
2007 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Radiative efficiency of InGaAs/InGaAsP/GaAs quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 313-314. DOI: 10.1109/LEOS.2007.4382403  0.839
2007 Xu L, Patel D, Menoni CS, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 58-59. DOI: 10.1109/LEOS.2006.278835  0.521
2007 Ee YK, Kumnorkaew P, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells LEDs using SiO2 microspheres Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453005  0.837
2007 Arif RA, Ee YK, Tansu N. Enhancement of radiative efficiency of nitride-based LEDs via staggered InGaN quantum wells emitting at 420-500 nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452515  0.838
2007 Ee YK, Arif RA, Jamil M, Tansu N. MOCVD epitaxy and optical properties of self-assembled InGaN quantum dots via Stranski-Kastranow growth mode emitting at 520-nm Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452499  0.818
2007 Ee YK, Arif RA, Tansu N, Kumnorkaew P, Gilchrist JF. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays Applied Physics Letters. 91. DOI: 10.1063/1.2816891  0.835
2007 Arif RA, Ee YK, Tansu N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2775334  0.855
2006 Arif RA, Tansu N. Interdiffused SbN-based quantum well on GaAs for 1300-1550 nm diode lasers Materials Research Society Symposium Proceedings. 891: 559-564. DOI: 10.1557/Proc-0891-Ee11-09  0.752
2006 Arif RA, Kim NH, Mawst LJ, Tansu N. Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition Materials Research Society Symposium Proceedings. 891: 65-70. DOI: 10.1557/Proc-0891-Ee02-05  0.836
2006 Arif RA, Ee YK, Tansu N. Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.646174  0.83
2006 Anton O, Xu LF, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. The intrinsic frequency response of 1.3-μm InGaAsN lasers in the range T = 10 °C-80 °C Ieee Photonics Technology Letters. 18: 1774-1776. DOI: 10.1109/Lpt.2006.880701  0.532
2006 Arif RA, Ee YK, Tansu N. Polarization field engineering with type-II InGaN-GaNAs quantum well for improved nitride gain media at 420-550 nm Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628309  0.84
2006 Mawst LJ, Yeh JY, Xu DP, Park JH, Huang J, Khandekar A, Kuech TF, Tansu N, Vurgaftman I, Meyer JR. InGaAsN/GaAsSb/GaAs(P) Type-II 'W' quantum well lasers Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627689  0.575
2006 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Optical determination of the electron effective mass of strain compensated In 0.4Ga 0.6As 0.995N 0.005/GaAs single quantum well Applied Physics Letters. 89. DOI: 10.1063/1.2364068  0.567
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486  0.714
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells Journal of Crystal Growth. 287: 615-619. DOI: 10.1016/J.Jcrysgro.2005.10.087  0.616
2006 Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers Optics Infobase Conference Papers.  0.467
2005 Lai FI, Kuo HC, Chang YH, Tsai MY, Chu CP, Kuo SY, Wang SC, Tansu N, Yeh JY, Mawst LJ. Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 6204-6207. DOI: 10.1143/Jjap.44.6204  0.63
2005 Mawst LJ, Yeh JY, Van Roy T, Tansu N. Characteristics of MOCVD-grown dilute-nitride quantum well lasers Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 192-203. DOI: 10.1117/12.597123  0.604
2005 Meyer JR, Vurgaftman I, Khandekar AA, Hawkins BE, Yeh JY, Mawst LJ, Kuech TF, Tansu N. Dilute nitride type-II "W" quantum well lasers for the near-infrared and mid-infrared Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 109-119. DOI: 10.1117/12.597115  0.557
2005 Arif RA, Tansu N. Interdiffused InGaAsSbN quantum wells on GaAs for 1300-1550 nm lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 171-182. DOI: 10.1117/12.591023  0.72
2005 Yeh JY, Mawst LJ, Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781. DOI: 10.1109/Lpt.2005.852331  0.69
2005 Anton O, Menoni CS, Yeh JY, Mawst LJ, Pikal JM, Tansu N. Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements Ieee Photonics Technology Letters. 17: 953-955. DOI: 10.1109/Lpt.2005.844332  0.608
2005 Anton OH, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Pikal JM, Tansu N. Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1079-1088. DOI: 10.1109/Jstqe.2005.853845  0.631
2005 Shterengas L, Belenky GL, Yeh JY, Mawst LJ, Tansu N. Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068. DOI: 10.1109/Jstqe.2005.853736  0.684
2005 Khandekar AA, Hawkins BE, Kuech TF, Yeh JY, Mawst LJ, Meyer JR, Vurgaftman I, Tansu N. Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2148620  0.583
2005 Thränhardt A, Kuznetsova I, Schlichenmaier C, Koch SW, Shterengas L, Belenky G, Yeh JY, Mawst LJ, Tansu N, Hader J, Moloney JV, Chow WW. Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1929880  0.589
2005 Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1868070  0.707
2005 Tansu N, Mawst LJ. Current injection efficiency of InGaAsN quantum-well lasers Journal of Applied Physics. 97. DOI: 10.1063/1.1852697  0.624
2005 Mawst LJ, Yeh JY, Tansu N. Characteristics of dilute-nitride quantum well lasers 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 98-100.  0.553
2005 Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 101-103.  0.58
2004 Chang YH, Kuo HC, Chang YA, Tsai MY, Wang SC, Tansu N, Yeh J, Mawst LJ. Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer The Japan Society of Applied Physics. 2004: 82-83. DOI: 10.7567/Ssdm.2004.F-1-2  0.659
2004 Yeh JY, Tansu N, Mawst LJ. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers Ieee Photonics Technology Letters. 16: 741-743. DOI: 10.1109/Lpt.2004.823715  0.69
2004 Tansu N, Yeh JY, Mawst LJ. Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/020  0.703
2004 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers Journal of Applied Physics. 96: 4653-4655. DOI: 10.1063/1.1794898  0.614
2004 Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm Electronics Letters. 40: 739-741. DOI: 10.1049/El:20040474  0.644
2004 Yeh JY, Mawst LJ, Tansu N. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Journal of Crystal Growth. 272: 719-725. DOI: 10.1016/J.Jcrysgro.2004.09.005  0.724
2004 Yeh JY, Tansu N, Mawst LJ. Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well Journal of Crystal Growth. 265: 1-7. DOI: 10.1016/J.Jcrysgro.2004.01.022  0.614
2004 Yeh JY, Mawst LJ, Tansu N. Carrier transport and injection efficiency of InGaAsN quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 693-694.  0.565
2004 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates Osa Trends in Optics and Photonics Series. 96: 621-623.  0.333
2004 Shterengas L, Yeh JY, Mawst LJ, Tansu N, Belenky G. Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers Osa Trends in Optics and Photonics Series. 96: 615-616.  0.306
2004 Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 697-698.  0.495
2003 Mawst LJ, Tansu N, Yeh JY. MOCVD-Grown InGaAsN Quantum-Well Lasers Proceedings of Spie - the International Society For Optical Engineering. 4995: 39-53. DOI: 10.1117/12.475793  0.583
2003 Tansu N, Yeh JY, Mawst LJ. High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition Ieee Journal On Selected Topics in Quantum Electronics. 9: 1220-1227. DOI: 10.1109/Jstqe.2003.820911  0.706
2003 Tansu N, Mawst LJ. Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions Ieee Journal of Quantum Electronics. 39: 1205-1210. DOI: 10.1109/Jqe.2003.817235  0.613
2003 Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm Applied Physics Letters. 83: 2742-2744. DOI: 10.1063/1.1616193  0.628
2003 Tansu N, Yeh JY, Mawst LJ. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers Applied Physics Letters. 83: 2512-2514. DOI: 10.1063/1.1613998  0.652
2003 Tansu N, Yeh JY, Mawst LJ. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers Applied Physics Letters. 83: 2112-2114. DOI: 10.1063/1.1611279  0.701
2003 Tansu N, Quandt A, Kanskar M, Mulhearn W, Mawst LJ. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy Applied Physics Letters. 83: 18-20. DOI: 10.1063/1.1591238  0.59
2003 Tansu N, Yeh JY, Mawst LJ. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm Applied Physics Letters. 82: 4038-4040. DOI: 10.1063/1.1581978  0.736
2003 Tansu N, Yeh JY, Mawst LJ. Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing Applied Physics Letters. 82: 3008-3010. DOI: 10.1063/1.1572470  0.714
2003 Tansu N, Mawst LJ. The role of hole leakage in 1300-nm InGaAsN quantum-well lasers Applied Physics Letters. 82: 1500-1502. DOI: 10.1063/1.1558218  0.627
2003 Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 269-272.  0.582
2003 Yeh JY, Tansu N, Mawst LJ. Temperature sensitivity of 1360 nm InGaAsN quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 41-42.  0.587
2003 Tansu N, Yeh JY, Mawst LJ. Carrier confinement in 1300-nm InGaAsN quantum-well lasers Osa Trends in Optics and Photonics Series. 88: 526-527.  0.347
2003 Tansu N, Mawst LJ, Vurgaftman I, Meyer JR. GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 37-38.  0.56
2002 Tansu N, Mawst LJ. Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers Proceedings of Spie - the International Society For Optical Engineering. 4646: 302-312. DOI: 10.1117/12.470529  0.55
2002 Tansu N, Mawst LJ. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 14: 1052-1054. DOI: 10.1109/Lpt.2002.1021966  0.62
2002 Tansu N, Chang Y, Takeuchi T, Bour DP, Corzine SW, Tan MRT, Mawst LJ. Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers Ieee Journal of Quantum Electronics. 38: 640-651. DOI: 10.1109/Jqe.2002.1005415  0.4
2002 Tansu N, Mawst LJ. Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers Ieee Photonics Technology Letters. 14: 444-446. DOI: 10.1109/68.992572  0.443
2002 Tansu N, Kirsch NJ, Mawst LJ. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers Applied Physics Letters. 81: 2523-2525. DOI: 10.1063/1.1511290  0.622
2002 Tansu N, Mawst LJ. Temperature sensitivity analysis of high-performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum well lasers Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 269.  0.313
2002 Tansu N, Mawst LJ. High performance 1300-nm dilute-nitride quantum well lasers by MOCVD Conference Digest - Ieee International Semiconductor Laser Conference. 33-34.  0.568
2001 Tansu N, Mawst LJ. InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs Proceedings of Spie - the International Society For Optical Engineering. 4287: 188-194. DOI: 10.1117/12.429800  0.611
2001 Tansu N, Mawst LJ. High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers Ieee Photonics Technology Letters. 13: 179-181. DOI: 10.1109/68.914313  0.455
2001 Zhou D, Lee TW, Tansu N, Hagness S, Mawst LJ. Large spot-size narrow waveguide VCSEL Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 469-470.  0.489
2000 Tansu N, Zhou D, Mawst LJ. Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers Ieee Photonics Technology Letters. 12: 603-605. DOI: 10.1109/68.849057  0.808
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