Michael Kozicki - Publications

Affiliations: 
Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering

139 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Bartlett P, Berg AI, Bernasconi M, Brown S, Burr G, Foroutan-Nejad C, Gale E, Huang R, Ielmini D, Kissling G, Kolosov V, Kozicki M, Nakamura H, Rushchanskii K, Salinga M, et al. Phase-change memories (PCM) - Experiments and modelling: general discussion. Faraday Discussions. PMID 30697618 DOI: 10.1039/c8fd90064g  0.48
2019 Berg AI, Brivio S, Brown S, Burr G, Deswal S, Deuermeier J, Gale E, Hwang H, Ielmini D, Indiveri G, Kenyon AJ, Kiazadeh A, Köymen I, Kozicki M, Li Y, et al. Synaptic and neuromorphic functions: general discussion. Faraday Discussions. PMID 30697617 DOI: 10.1039/c8fd90065e  0.48
2019 Ambrosi E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga MA, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, et al. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion. Faraday Discussions. PMID 30663725 DOI: 10.1039/c8fd90059k  0.48
2018 Gonzalez-Velo Y, Patadia A, Barnaby HJ, Kozicki MN. Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability. Faraday Discussions. PMID 30417185 DOI: 10.1039/c8fd00125a  0.44
2016 Chen W, Fang R, Balaban MB, Yu W, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN. A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. Nanotechnology. 27: 255202. PMID 27171505 DOI: 10.1088/0957-4484/27/25/255202  1
2016 Mahmud A, Gonzalez-Velo Y, Saremi M, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Alford TL, Goryll M, Yu W, Mahalanabis D, Chen W, Chamele N, Taggart J. Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning Ieee Transactions On Nuclear Science. DOI: 10.1109/TNS.2016.2555920  1
2016 Chen W, Barnaby HJ, Kozicki MN. Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer Ieee Electron Device Letters. 37: 576-579. DOI: 10.1109/LED.2016.2542239  1
2016 Chen W, Barnaby HJ, Kozicki MN. Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells Ieee Electron Device Letters. 37: 580-583. DOI: 10.1109/LED.2016.2540361  1
2015 Saremi M, Barnaby HJ, Edwards A, Kozicki MN. Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films Ecs Electrochemistry Letters. 4: H29-H31. DOI: 10.1149/2.0061507eel  1
2015 Chen W, Barnaby HJ, Kozicki MN, Edwards AH, Gonzalez-Velo Y, Fang R, Holbert KE, Yu S, Yu W. A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells Ieee Transactions On Nuclear Science. DOI: 10.1109/TNS.2015.2478883  1
2015 Mahalanabis D, Liu R, Barnaby HJ, Yu S, Kozicki MN, Mahmud A, Deionno E. Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays Ieee Transactions On Nuclear Science. DOI: 10.1109/TNS.2015.2478382  1
2015 Gonzalez-Velo Y, Mahmud A, Chen W, Taggart J, Barnaby HJ, Kozicki MN, Ailavajhala M, Holbert KE, Mitkova M. TID impact on process modified CBRAM cells Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 2015. DOI: 10.1109/RADECS.2015.7365685  1
2015 Mahmud A, Gonzalez-Velo Y, Saremi M, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Alford TL, Goryll M, Mahalanabis D, Yu W, Chen W, Taggart J. Optimization of flexible Ag-chalcogenide glass sensors for radiation detection Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 2015. DOI: 10.1109/RADECS.2015.7365644  1
2015 Edwards AH, Barnaby HJ, Campbell KA, Kozicki MN, Liu W, Marinella MJ. Reconfigurable memristive device technologies Proceedings of the Ieee. 103: 1004-1033. DOI: 10.1109/JPROC.2015.2441752  1
2015 Mahalanabis D, Bharadwaj V, Barnaby HJ, Vrudhula S, Kozicki MN. A nonvolatile sense amplifier flip-flop using programmable metallization cells Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 5: 205-213. DOI: 10.1109/JETCAS.2015.2433571  1
2015 Orava J, Kozicki MN, Yannopoulos SN, Greer AL. Reversible migration of silver on memorized pathways in Ag-Ge40S60 films Aip Advances. 5. DOI: 10.1063/1.4927006  1
2015 Rajabi S, Saremi M, Barnaby HJ, Edwards A, Kozicki MN, Mitkova M, Mahalanabis D, Gonzalez-Velo Y, Mahmud A. Static impedance behavior of programmable metallization cells Solid-State Electronics. 106: 27-33. DOI: 10.1016/j.sse.2014.12.019  1
2015 Mitkova M, Wolf K, Belev G, Ailavajhala M, Tenne DA, Barnaby H, Kozicki MN. X-ray radiation induced effects in selected chalcogenide glasses and CBRAM devices based on them Physica Status Solidi (B) Basic Research. DOI: 10.1002/pssb.201552562  1
2014 Ailavajhala MS, Gonzalez-Velo Y, Poweleit CD, Barnaby HJ, Kozicki MN, Butt DP, Mitkova M. New functionality of chalcogenide glasses for radiation sensing of nuclear wastes Journal of Hazardous Materials. 269: 68-73. PMID 24332317 DOI: 10.1016/j.jhazmat.2013.11.050  1
2014 Saremi M, Rajabi S, Barnaby HJ, Kozicki MN. The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC) Materials Research Society Symposium Proceedings. 1692. DOI: 10.1557/opl.2014.521  1
2014 Nichol T, Latif MR, Ailavajhala MS, Tenne DA, Gonzalez-Velo Y, Barnaby H, Kozicki MN, Mitkova M. Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation Ieee Transactions On Nuclear Science. 61: 2855-2861. DOI: 10.1109/TNS.2014.2367578  1
2014 Dandamudi P, Mahmud A, Gonzalez-Velo Y, Kozicki MN, Barnaby HJ, Roos B, Alford TL, Ailavajhala M, Mitkova M, Holbert KE. Flexible sensors based on radiation-induced diffusion of ag in chalcogenide glass Ieee Transactions On Nuclear Science. 61: 3432-3437. DOI: 10.1109/TNS.2014.2364140  1
2014 Taggart JL, Gonzalez-Velo Y, Mahalanabis D, Mahmud A, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Wolf K, Deionno E, White AL. Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells Ieee Transactions On Nuclear Science. 61: 2985-2990. DOI: 10.1109/TNS.2014.2362126  1
2014 Mahalanabis D, Barnaby HJ, Kozicki MN, Bharadwaj V, Rajabi S. Investigation of single event induced soft errors in programmable metallization cell memory Ieee Transactions On Nuclear Science. 61: 3557-3563. DOI: 10.1109/TNS.2014.2358235  1
2014 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of Ag - Ge40S60 based programmable metallization cells Ieee Transactions On Nuclear Science. 61: 1726-1731. DOI: 10.1109/TNS.2014.2304634  1
2014 Mahalanabis D, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Vrudhula S. Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells Ieee Transactions On Electron Devices. 61: 3723-3730. DOI: 10.1109/TED.2014.2358573  1
2014 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Gopalan C, Holbert K. Total ionizing dose retention capability of conductive bridging random access memory Ieee Electron Device Letters. 35: 205-207. DOI: 10.1109/LED.2013.2295801  1
2014 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Holbert K. Total-ionizing-dose effects on the impedance of silverdoped chalcogenide programmable metallization cells Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2014.6836470  1
2014 Fang R, Gonzalez Velo Y, Chen W, Holbert KE, Kozicki MN, Barnaby H, Yu S. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory Applied Physics Letters. 104. DOI: 10.1063/1.4875748  1
2014 Ailavajhala MS, Gonzalez-Velo Y, Poweleit C, Barnaby H, Kozicki MN, Holbert K, Butt DP, Mitkova M. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films Journal of Applied Physics. 115. DOI: 10.1063/1.4862561  1
2014 Mahalanabis D, Barnaby HJ, Gonzalez-Velo Y, Kozicki MN, Vrudhula S, Dandamudi P. Incremental resistance programming of programmable metallization cells for use as electronic synapses Solid-State Electronics. 100: 39-44. DOI: 10.1016/j.sse.2014.07.002  1
2014 Ailavajhala MS, Nichol T, Gonzalez-Velo Y, Poweleit CD, Barnaby HJ, Kozicki MN, Butt DP, Mitkova M. Thin Ge-Se films as a sensing material for radiation doses Physica Status Solidi (B) Basic Research. 251: 1347-1353. DOI: 10.1002/pssb.201350188  1
2013 Kozicki MN, Dandamudi P, Barnaby HJ, Gonzalez-Velo Y. Programmable metallization cells in memory and switching applications Ecs Transactions. 58: 47-52. DOI: 10.1149/05805.0047ecst  1
2013 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Chandran A, Holbert KE, Mitkova M, Ailavajhala M. Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells Ieee Transactions On Nuclear Science. 60: 4563-4569. DOI: 10.1109/TNS.2013.2286318  1
2013 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Mitkova M, Holbert KE, Ailavajhala M, Yu W. Sensors based on radiation-induced diffusion of silver in Germanium selenide glasses Ieee Transactions On Nuclear Science. 60: 4257-4264. DOI: 10.1109/TNS.2013.2285343  1
2013 Dandamudi P, Barnaby HJ, Kozicki MN, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. DOI: 10.1109/RADECS.2013.6937426  1
2013 Jameson JR, Blanchard P, Cheng C, Dinh J, Gallo A, Gopalakrishnan V, Gopalan C, Guichet B, Hsu S, Kamalanathan D, Kim D, Koushan F, Kwan M, Law K, Lewis D, ... ... Kozicki MN, et al. Conductive-bridge memory (CBRAM) with excellent high-temperature retention Technical Digest - International Electron Devices Meeting, Iedm. 30.1.1-30.1.4. DOI: 10.1109/IEDM.2013.6724721  1
2013 Barnaby H, Edwards A, Oleksy D, Kozicki M. Finite element modeling of ag transport and reactions in chalcogenide glass resistive memory Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2013.6497392  1
2013 Valov I, Kozicki MN. Cation-based resistance change memory Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/7/074005  1
2012 Lu W, Jeong DS, Kozicki M, Waser R. Electrochemical metallization cells-blending nanoionics into nanoelectronics? Mrs Bulletin. 37: 124-130. DOI: 10.1557/mrs.2012.5  1
2012 Gonzalez-Velo Y, Barnaby HJ, Chandran A, Oleksy DR, Dandamudi P, Kozicki MN, Holbert KE, Mitkova M, Ailavajhala M, Chen P. Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures Ieee Transactions On Nuclear Science. 59: 3093-3100. DOI: 10.1109/TNS.2012.2224137  1
2012 Jameson JR, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki M, Derhacobian N. Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells Ieee Electron Device Letters. 33: 257-259. DOI: 10.1109/LED.2011.2177803  1
2012 Jameson JR, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki M. Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells Applied Physics Letters. 100. DOI: 10.1063/1.3675870  1
2012 Fujisaki Y, Dimitrakis P, Tokumitsu E, Kozicki MN. Materials Research Society Symposium Proceedings: Preface Materials Research Society Symposium Proceedings. 1430.  1
2011 Kamalanathan D, Akhavan A, Kozicki MN. Low voltage cycling of programmable metallization cell memory devices. Nanotechnology. 22: 254017. PMID 21572195 DOI: 10.1088/0957-4484/22/25/254017  1
2011 Kozicki MN. Cation-based resistive memory Proceedings - International Nanoelectronics Conference, Inec. DOI: 10.1109/INEC.2011.5991737  1
2011 Valov I, Waser R, Jameson JR, Kozicki MN. Electrochemical metallization memories - Fundamentals, applications, prospects Nanotechnology. 22. DOI: 10.1088/0957-4484/22/25/254003  1
2011 Jameson JR, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki MN. One-dimensional model of the programming kinetics of conductive-bridge memory cells Applied Physics Letters. 99. DOI: 10.1063/1.3623485  1
2011 Baliga SR, Ren M, Kozicki MN. Self-healing interconnects for flexible electronics applications Thin Solid Films. 519: 2339-2343. DOI: 10.1016/j.tsf.2010.10.064  1
2011 Puthentheradam SC, Schroder DK, Kozicki MN. Inherent diode isolation in programmable metallization cell resistive memory elements Applied Physics a: Materials Science and Processing. 102: 817-826. DOI: 10.1007/s00339-011-6292-5  1
2010 Derhacobian N, Hollmer SC, Gilbert N, Kozicki MN. Power and energy perspectives of nonvolatile memory technologies Proceedings of the Ieee. 98: 283-298. DOI: 10.1109/JPROC.2009.2035147  1
2010 Thermadam SP, Bhagat SK, Alford TL, Sakaguchi Y, Kozicki MN, Mitkova M. Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices Thin Solid Films. 518: 3293-3298. DOI: 10.1016/j.tsf.2009.09.021  1
2009 Russo U, Kamalanathan D, Ielmini D, Lacaita AL, Kozicki MN. Study of multilevel programming in Programmable Metallization Cell (PMC) memory Ieee Transactions On Electron Devices. 56: 1040-1047. DOI: 10.1109/TED.2009.2016019  1
2009 Je SS, Kim J, Kozicki MN, Chae J. A directional capacitive mems microphone using nano-Electrodeposits Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 96-99. DOI: 10.1109/MEMSYS.2009.4805328  1
2009 Kamalanathan D, Russo U, Ielmini D, Kozicki MN. Voltage-driven on-off transition and tradeoff with program and erase current in Programmable Metallization Cell (PMC) memory Ieee Electron Device Letters. 30: 553-555. DOI: 10.1109/LED.2009.2016991  1
2009 Je SS, Harrison JC, Kozicki MN, Bakkaloglu B, Kiaei S, Chae J. In situ tuning of a MEMS microphone using electrodeposited nanostructures Journal of Micromechanics and Microengineering. 19. DOI: 10.1088/0960-1317/19/3/035015  1
2009 Yang Y, Zhang X, Kozicki MN, Chae J. A solid electrolyte valve for micro/nano-fluidics Technical Proceedings of the 2009 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2009. 3: 525-528.  1
2009 Je SS, Kim J, Kozicki MN, Chae J. Nano-electrodeposits on MEMS directional microphones for hearing aid optimization Nanotechnology 2009: Fabrication, Particles, Characterization, Mems, Electronics and Photonics - Technical Proceedings of the 2009 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2009. 1: 436-439.  1
2008 Schindler C, Weides M, Kozicki MN, Waser R. Ultra-low current resistive memory based on Cu-SiO2 Ieee 2008 Silicon Nanoelectronics Workshop, Snw 2008. DOI: 10.1109/SNW.2008.5418475  1
2008 Nessel JA, Lee RQ, Mueller CH, Kozicki MN, Ren M, Morse J. A novel nanoionics-based switch for microwave applications Ieee Mtt-S International Microwave Symposium Digest. 1050-1054. DOI: 10.1109/MWSYM.2008.4633016  1
2008 Kozicki MN. Ionic memory - materials and device characteristics International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 897-900. DOI: 10.1109/ICSICT.2008.4734690  1
2008 Je SS, Kim J, Harrison JC, Kozicki MN, Chae J. In situ tuning of omnidirectional microelectromechanical-systems microphones to improve performance fit in hearing aids Applied Physics Letters. 93. DOI: 10.1063/1.2989132  1
2008 Schindler C, Weides M, Kozicki MN, Waser R. Low current resistive switching in Cu-SiO2 cells Applied Physics Letters. 92. DOI: 10.1063/1.2903707  1
2008 Robertson J, Kozicki M, Petrovic S. Assessing the true cost of delivering nano-hype Asee Annual Conference and Exposition, Conference Proceedings 1
2007 Schindler C, Thermadam SCP, Waser R, Kozicki MN. Bipolar and unipolar resistive switching in cu-doped SiO2 Ieee Transactions On Electron Devices. 54: 2762-2768. DOI: 10.1109/TED.2007.904402  1
2007 Gilbert NE, Kozicki MN. An embeddable multilevel-cell solid electrolyte memory array Ieee Journal of Solid-State Circuits. 42: 1383-1391. DOI: 10.1109/JSSC.2007.897172  1
2007 Mitkova M, Kozicki MN. Ag-photodoping in Ge-chalcogenide amorphous thin films-Reaction products and their characterization Journal of Physics and Chemistry of Solids. 68: 866-872. DOI: 10.1016/j.jpcs.2007.01.004  1
2007 Gopalan C, Kozicki MN, Bhagat S, Puthen Thermadam SC, Alford TL, Mitkova M. Structure of copper-doped tungsten oxide films for solid-state memory Journal of Non-Crystalline Solids. 353: 1844-1848. DOI: 10.1016/j.jnoncrysol.2007.02.054  1
2007 Balakrishnan M, Kozicki MN, Poweleit CD, Bhagat S, Alford TL, Mitkova M. Crystallization effects in annealed thin GeS2 films photodiffused with Ag Journal of Non-Crystalline Solids. 353: 1454-1459. DOI: 10.1016/j.jnoncrysol.2006.09.071  1
2007 Kozicki MN. Memory devices based on solid electrolytes Materials Research Society Symposium Proceedings. 997: 165-174.  1
2007 Kozicki M, Peloquin J, Campbell K. 8th Annual Non-Volatile Memory Technology Symposium NVMTS 07: Albuquerque, New Mexico November 10-13, 2007 Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. iii.  1
2007 Kamalanathan D, Baliga S, Puthen Thermadam SC, Kozicki M. ON state stability of Programmable Metalization Cell (PMC) memory Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 91-95.  1
2007 Schindler C, Meier M, Waser R, Kozicki MN. Resistive switching in Ag-Ge-Se with extremely low write currents Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 82-85.  1
2007 Balakrishnan M, Kozicki MN, Poweleit C, Bhagat S, Alford TL, Mitkova M. Structural study of Cu photodoped Ge-S glasses Journal of Optoelectronics and Advanced Materials. 9: 3241-3246.  1
2007 Baliga SR, Puthen Thermadam SC, Kamalanathan D, Allee DR, Kozicki MN. Solid electrolyte memory for flexible electronics Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 86-90.  1
2006 Enderling S, Brown CL, Smith S, Dicks MH, Stevenson JTM, Mitkova M, Kozicki MN. Sheet resistance measurement of non-standard cleanroom materials using suspended Greek cross test structures Ieee Transactions On Semiconductor Manufacturing. 19: 2-9. DOI: 10.1109/TSM.2005.863248  1
2006 Kozicki MN, Gopalan C, Balakrishnan M, Mitkova M. A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte Ieee Transactions On Nanotechnology. 5: 535-544. DOI: 10.1109/TNANO.2006.880407  1
2006 Kozicki MN, Mitkova M. Mass transport in chalcogenide electrolyte films - materials and applications Journal of Non-Crystalline Solids. 352: 567-577. DOI: 10.1016/j.jnoncrysol.2005.11.065  1
2006 Mitkova M, Kozicki MN, Kim HC, Alford TL. Crystallization effects in annealed thin Ge-Se films photodiffused with Ag Journal of Non-Crystalline Solids. 352: 1986-1990. DOI: 10.1016/j.jnoncrysol.2005.09.051  1
2006 Kozicki MN, Ratnakumar C, Mitkova M. Electrodeposit formation in solid electrolytes 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 111-115.  1
2006 Balakrishnan M, Thermadam SCP, Mitkova M, Kozicki MN. A low power non-volatile memory element based on copper in deposited silicon oxide 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 104-110.  1
2006 Natarajan S, Arimoto K, Bateman B, Stipe B, Kozicki MN. Emerging & disruptive memory technologies Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 148-149.  1
2005 Kozicki MN, Park M, Mitkova M. Nanoscale memory elements based on solid-state electrolytes Ieee Transactions On Nanotechnology. 4: 331-338. DOI: 10.1109/TNANO.2005.846936  1
2005 Kozicki MN, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M. Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes 2005 Non-Volatile Memory Technology Symposium, Nvmts05. 83-89. DOI: 10.1109/NVMT.2005.1541405  1
2005 Balakrishnan M, Kozicki MN, Gopalan C, Mitkova M. Germanium sulfide-based solid electrolytes for non-volatile memory Device Research Conference - Conference Digest, Drc. 2005: 47-48. DOI: 10.1109/DRC.2005.1553049  1
2005 Gilbert NE, Gopalan C, Kozicki MN. A macro model of programmable metallization cell devices Solid-State Electronics. 49: 1813-1819. DOI: 10.1016/j.sse.2005.10.019  1
2005 Kozicki MN, Maroufkhani P, Mitkova M. Valving in microchannels via electrodeposition on solid electrolytes 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 716-719.  1
2005 Kozicki MN, Brown CL, Mitkova M, Enderling S, Hedley J, Walton AJ. Application of mass transport in solid electrolyte films in tunable microelectromechanical resonators 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 447-450.  1
2005 Enderling S, Brown CL, Smith S, Dicks MH, Stevenson JTM, Ross AWS, Mitkova M, Kozicki MN, Walton AJ. Suspended Greek cross test structures for measuring the sheet resistance of non-standard cleanroom materials Ieee International Conference On Microelectronic Test Structures. 1-4.  1
2005 Enderling S, Brown CL, Balakrishnan M, Hedley J, Stevenson JTM, Bond S, Dunare CC, Harris AJ, Burdess JS, Mitkova M, Kozicki MN, Walton AJ. Integration of a novel electrochemical tuning scheme with MEMS surface micromachined resonators Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 159-162.  1
2004 Mitkova M, Kozicki MN, Kim HC, Alford TL. Thermal and photodiffusion of Ag in S-rich Ge-S amorphous films Thin Solid Films. 449: 248-253. DOI: 10.1016/j.tsf.2003.10.077  1
2004 Mitkova M, Kozicki MN, Kim HC, Alford TL. Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin films Journal of Non-Crystalline Solids. 338: 552-556. DOI: 10.1016/j.jnoncrysol.2004.03.040  1
2004 Kozicki MN, Gopalan C, Balakrishnan M, Park M, Mitkova M. Non-volatile memory based on solid electrolytes Proceedings 2004 Non-Volatile Memory Technology Symposium, Nvmts 2004. 10-17.  1
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Gilbert M, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETs Ieee Transactions On Nanotechnology. 2: 102-109. DOI: 10.1109/TNANO.2003.812586  1
2003 Gopalan C, Chakraborty PS, Yang J, Kim T, Wu Z, McCartney MR, Goodnick SM, Kozicki MN, Thornton TJ. Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants Ieee Transactions On Electron Devices. 50: 1277-1283. DOI: 10.1109/TED.2003.813467  1
2003 Kozicki MN, Mitkova M, Aberouette JP. Nanostructure of solid electrolytes and surface electrodeposits Physica E: Low-Dimensional Systems and Nanostructures. 19: 161-166. DOI: 10.1016/S1386-9477(03)00313-8  1
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3  1
2003 Laws GM, Thornton TJ, Yang J, De la Garza L, Kozicki M, Gust D, Gu J, Sorid D. Drain current control in a hybrid molecular/MOSFET device Physica E: Low-Dimensional Systems and Nanostructures. 17: 659-663. DOI: 10.1016/S1386-9477(02)00923-2  1
2003 Mitkova MI, Kozicki MN, Aberouette JP. Morphology of electrochemically grown silver deposits on silver-saturated Ge-Se thin films Journal of Non-Crystalline Solids. 326: 425-429. DOI: 10.1016/S0022-3093(03)00450-2  1
2003 Kozicki MN, Maroufkhani P, Mitkova M. Flow regulation in microchannels via electrical alteration of surface properties Superlattices and Microstructures. 34: 467-473. DOI: 10.1016/j.spmi.2004.03.043  1
2003 Kozicki MN, Mitkova M, Park M, Balakrishnan M, Gopalan C. Information storage using nanoscale electrodeposition of metal in solid electrolytes Superlattices and Microstructures. 34: 459-465. DOI: 10.1016/j.spmi.2004.03.042  1
2003 Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/j.spmi.2004.03.020  1
2002 Yang J, De La Garza L, Thornton TJ, Kozicki M, Gust D. Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1706-1709. DOI: 10.1116/1.1491543  1
2002 Yang J, Thornton TJ, Goodnick SM, Kozicki M, Lyding J. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy Physica B: Condensed Matter. 314: 354-357. DOI: 10.1016/S0921-4526(01)01404-1  1
2002 Yang J, Thornton TJ, Kozicki M, De la Garza L, Gust D. Molecular control of the threshold voltage of an NMOS inversion layer Microelectronic Engineering. 63: 135-139. DOI: 10.1016/S0167-9317(02)00634-2  1
2002 Kozicki MN, Mitkova M, Zhu J, Park M. Nanoscale phase separation in Ag-Ge-Se glasses Microelectronic Engineering. 63: 155-159. DOI: 10.1016/S0167-9317(02)00631-7  1
2002 Mitkova M, Kozicki MN. Silver incorporation in Ge-Se glasses used in programmable metallization cell devices Journal of Non-Crystalline Solids. 299: 1023-1027. DOI: 10.1016/S0022-3093(01)01068-7  1
2002 Yang J, De La Garza L, Thornton TJ, Kozicki M, Gust D. Molecular control of the drain current in a buried channel MOSFET 2002 International Conference On Computational Nanoscience and Nanotechnology - Iccn 2002. 318-321. DOI: 10.1002/1521-3951(200209)233:1<83::AID-PSSB83>3.0.CO;2-#  1
2000 Kozicki MN, Yun M, Yang SJ, Aberouette JP, Bird JP. Nanoscale effects in devices based on chalcogenide solid solutions Superlattices and Microstructures. 27: 485-488. DOI: 10.1006/spmi.2000.0827  1
2000 Kozicki MN, Yang SJ, Axelrod BW. Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid Superlattices and Microstructures. 27: 481-484. DOI: 10.1006/spmi.2000.0826  1
1999 Kozicki MN, Yang SJ, Kim T, Kardynal B. Novel nanoscale resist using 10-undecanoic acid monolayers on silicon dioxide Microelectronic Engineering. 47: 239-241. DOI: 10.1016/S0167-9317(99)00204-X  1
1999 Goodnick SM, Bird J, Ferry DK, Gunther AD, Khoury MD, Kozicki M, Rack MJ, Thornton TJ, Vasileska-Kafedezka D. Transport in split gate MOS quantum dot structures Proceedings of the Ieee Great Lakes Symposium On Vlsi. 394-396.  1
1998 Kamal AHM, Lutzen J, Sanborn BA, Sidorov MV, Kozicki MN, Smith DJ, Ferry DK. Two-terminal nanocrystalline silicon memory device at room temperature Semiconductor Science and Technology. 13: 1328-1332. DOI: 10.1088/0268-1242/13/11/018  1
1998 Yun MH, Burrows VA, Kozicki MN. Analysis of KOH etching of (100) silicon on insulator for the fabrication of nanoscale tips Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2844-2848.  1
1998 West WC, Seradzki K, Kardynol B, Kozicki MN. Equivalent circuit modeling of the Ag|As0.24S0.36Ag0.40|Ag system prepared by photodissolution of Ag Journal of the Electrochemical Society. 145: 2971-2974.  1
1998 Swaroop B, West WC, Martinez G, Kozicki MN, Akers LA. Programmable current mode Hebbian learning neural network using Programmable Metallization Cell Proceedings - Ieee International Symposium On Circuits and Systems. 3: 33-36.  1
1998 Kozicki MN, Kardynal B, Yang SJ, Kim T, Sidorov MV, Smith DJ. Application of chemically enhanced vapour etching in the fabrication on nanostructures Semiconductor Science and Technology. 13.  1
1998 Lützen J, Kamal AHM, Kozicki MN, Ferry DK, Sidorov MV, Smith DJ. Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2802-2805.  1
1997 McNally HA, Kozicki MN, Roberson RW, Whidden TK. Electrical characterization of Uromyces germ tubes grown on integrated circuit substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 779-783.  1
1997 Whidden TK, Yang SJ, Jenkins-Gray A, Pan M, Kozicki MN. Nanoscale lithography of silicon dioxide using electron beam patterned carboxylic acids as localized etch initiators Journal of the Electrochemical Society. 144: 605-616.  1
1997 Kamal AHM, Rack MJ, Kozicki MN, Ferry DK, Lützen J, Hallmark JA. Ultrathin cobalt silicide layers formed by rapid thermal processing of metal on amorphous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 899-902.  1
1996 Whidden TK, Ferry DK, Kozicki MN, Kim E, Kumar A, Wilbur J, Whitesides GM. Pattern transfer to silicon by microcontact printing and RIE Nanotechnology. 7: 447-451. DOI: 10.1088/0957-4484/7/4/027  1
1996 Allgair J, Ryan JM, Song HJ, Kozicki MN, Whidden TK, Ferry DK. Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching Nanotechnology. 7: 351-355. DOI: 10.1088/0957-4484/7/4/008  1
1996 Pan M, Yun M, Kozicki MN, Whidden TK. Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE) Superlattices and Microstructures. 20: 368-376.  1
1996 Kozicki MN, Allgair J, Jenkins-Gray A, Ferry DK, Whidden TK. The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication Physica B: Condensed Matter. 227: 318-322.  1
1996 Ferry DK, Khoury M, Pivin DP, Connolly KM, Whidden TK, Kozicki MN, Allee DR. Nanolithography Semiconductor Science and Technology. 11: 1552-1557.  1
1995 Whidden TK, Allgair J, Ryan JM, Kozicki MN, Ferry DK. Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks Journal of the Electrochemical Society. 142: 1199-1205. DOI: 10.1149/1.2044152  1
1995 Kozicki MN, Roberson RW, Whidden TK, Kersey SE. Directed growth of uromyces hyphae on integrated circuit substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1808-1813. DOI: 10.1116/1.579773  1
1994 Stoddard K, Crouch P, Kozicki M, Tsakalis K. Application of feed-forward and adaptive feedback control to semiconductor device manufacturing Proceedings of the American Control Conference. 1: 892-896.  1
1993 Rastogi P, Kozicki MN, Golshani F. ExPro—An Expert System Based Process Management System Ieee Transactions On Semiconductor Manufacturing. 6: 207-218. DOI: 10.1109/66.238168  1
1991 Kozicki MN, Hsia SW, Owen AE, Ewen PJS. Pass - a chalcogenide-based lithography scheme for I.C. fabrication Journal of Non-Crystalline Solids. 137: 1341-1344. DOI: 10.1016/S0022-3093(05)80372-2  1
1991 Ferry DK, Kozicki MN, Raupp GB. Some fundamental issues on metallization in VLSI (Invited Paper) Proceedings of Spie - the International Society For Optical Engineering. 1596: 2-11.  1
1989 Kozicki MN, Robertson JM. Silicide Formation on Polycrystalline Silicon by Direct Metal Implantation Journal of the Electrochemical Society. 136: 878-881. DOI: 10.1149/1.2096763  1
1989 Kozicki MN, Robertson JM, Kheyrandish H, Hill AE. Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing Journal of the Electrochemical Society. 136: 873-875. DOI: 10.1149/1.2096761  1
1989 Henscheid D, Kozicki MN, Sheets GW, Mughal M, Zwiebel I, Graham RJ. Rapid thermal nitridation of thin SiO2 films Journal of Electronic Materials. 18: 99-104. DOI: 10.1007/BF02657393  1
1989 Kozicki MN, Khawaja Y, Owen AE, Ewen PJS, Zakery A. As-S/Ag systems for integrated optics . 251-257.  1
1988 Zhang QZ, Kozicki MN, Schroder DK. The Effects of Nonuniform Oxide Thickness on MOSFET Performance Ieee Transactions On Electron Devices. 35: 1395-1397. DOI: 10.1109/16.2569  1
1983 Kozicki MN, Robertson JM. ELECTRON-BEAM ANNEALING OF Co AND Cr IMPLANTED POLYCRYSTALLINE SILICON Institute of Physics Conference Series. 137-142.  1
1983 Kozicki MN, Robertson JM, Holwill R. COBALT POLYCIDE - GATE LEVEL MATERIAL FOR VLSI Iee Colloquium (Digest) 1
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