Shuji Nakamura - Publications

Affiliations: 
Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering

500 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Reilly CE, Keller S, Nakamura S, DenBaars SP. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light, Science & Applications. 10: 150. PMID 34285184 DOI: 10.1038/s41377-021-00593-8  0.369
2021 Li P, Li H, Yao Y, Zhang H, Lynsky C, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. Optics Express. 29: 22001-22007. PMID 34265974 DOI: 10.1364/OE.430694  0.368
2020 Back J, Wong MS, Kearns J, DenBaars SP, Weisbuch C, Nakamura S. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. Optics Express. 28: 29991-30003. PMID 33114886 DOI: 10.1364/Oe.401640  0.499
2020 Zhang H, Cohen DA, Chan P, Wong MS, Li P, Li H, Nakamura S, Denbaars SP. High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating. Optics Letters. 45: 5844-5847. PMID 33057299 DOI: 10.1364/Ol.403679  0.397
2020 Chow YC, Lee C, Wong MS, Wu YR, Nakamura S, DenBaars SP, Bowers JE, Speck JS. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805. PMID 32752371 DOI: 10.1364/Oe.399924  0.377
2020 Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, Wong MS, Zhang H, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159. PMID 32680016 DOI: 10.1364/Oe.387561  0.436
2020 Lheureux G, Monavarian M, Anderson R, Decrescent RA, Bellessa J, Symonds C, Schuller JA, Speck JS, Nakamura S, DenBaars SP. Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. Optics Express. 28: 17934-17943. PMID 32679995 DOI: 10.1364/Oe.392546  0.387
2020 Li P, Zhang H, Li H, Iza M, Yao Y, Wong MS, Palmquist N, Speck JS, Nakamura S, DenBaars SP. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712. PMID 32672165 DOI: 10.1364/Oe.394664  0.424
2020 Li H, Li P, Zhang H, Chow YC, Wong MS, Pinna S, Klamkin J, Speck JS, Nakamura S, DenBaars SP. Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575. PMID 32403828 DOI: 10.1364/Oe.384139  0.476
2020 Wong MS, Kearns JA, Lee C, Smith JM, Lynsky C, Lheureux G, Choi H, Kim J, Kim C, Nakamura S, Speck JS, DenBaars SP. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793. PMID 32121793 DOI: 10.1364/Oe.384127  0.425
2020 Pasayat SS, Gupta C, Wang Y, DenBaars SP, Nakamura S, Keller S, Mishra UK. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13. PMID 31947918 DOI: 10.3390/Ma13010213  0.391
2020 Bonef B, Reilly CE, Wu F, Nakamura S, DenBaars SP, Keller S, Speck JS. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition Applied Physics Express. 13: 65005. DOI: 10.35848/1882-0786/Ab9167  0.352
2020 Gandrothula S, Kamikawa T, Araki M, Cohen D, Speck JS, Nakamura S, DenBaars SP. An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface Applied Physics Express. 13: 41003. DOI: 10.35848/1882-0786/Ab7Bc9  0.412
2020 Zollner CJ, Almogbel AS, Yao Y, Wang M, Iza M, Speck JS, DenBaars SP, Nakamura S. Superlattice hole injection layers for UV LEDs grown on SiC Optical Materials Express. 10: 2171-2180. DOI: 10.1364/Ome.398146  0.444
2020 Wong MS, Nakamura S, DenBaars SP. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes Ecs Journal of Solid State Science and Technology. 9: 15012. DOI: 10.1149/2.0302001Jss  0.38
2020 Alkhazragi O, Kang CH, Kong M, Liu G, Lee C, Li K, Zhang H, Wagstaff JM, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP, Ooi BS. 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector Ieee Photonics Technology Letters. 1-1. DOI: 10.1109/Lpt.2020.2995110  0.362
2020 Lynsky C, Alhassan AI, Lheureux G, Bonef B, DenBaars SP, Nakamura S, Wu Y, Weisbuch C, Speck JS. Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054604  0.4
2020 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, Speck JS. Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport Physical Review B. 101: 75305. DOI: 10.1103/Physrevb.101.075305  0.364
2020 Pasayat SS, Hatui N, Li W, Gupta C, Nakamura S, Denbaars SP, Keller S, Mishra UK. Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters. 117: 62102. DOI: 10.1063/5.0017948  0.372
2020 Ley RT, Smith JM, Wong MS, Margalith T, Nakamura S, DenBaars SP, Gordon MJ. Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation Applied Physics Letters. 116: 251104. DOI: 10.1063/5.0011651  0.426
2020 Pasayat SS, Ley R, Gupta C, Wong MS, Lynsky C, Wang Y, Gordon MJ, Nakamura S, Denbaars SP, Keller S, Mishra UK. Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates Applied Physics Letters. 117: 61105. DOI: 10.1063/5.0011203  0.493
2020 Pasayat SS, Gupta C, Wong MS, Wang Y, Nakamura S, Denbaars SP, Keller S, Mishra UK. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates Applied Physics Letters. 116: 111101. DOI: 10.1063/5.0001480  0.503
2020 Smith JM, Ley R, Wong MS, Baek YH, Kang JH, Kim CH, Gordon MJ, Nakamura S, Speck JS, DenBaars SP. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter Applied Physics Letters. 116: 71102. DOI: 10.1063/1.5144819  0.402
2020 Iyer PP, DeCrescent RA, Mohtashami Y, Lheureux G, Butakov NA, Alhassan A, Weisbuch C, Nakamura S, DenBaars SP, Schuller JA. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces Nature Photonics. 14: 543-548. DOI: 10.1038/S41566-020-0641-X  0.446
2020 SaifAddin BK, Almogbel AS, Zollner CJ, Wu F, Bonef B, Iza M, Nakamura S, DenBaars SP, Speck JS. AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates Acs Photonics. 7: 554-561. DOI: 10.1021/Acsphotonics.9B00600  0.434
2020 Zhang H, Li H, Li P, Song J, Speck JS, Nakamura S, DenBaars SP. Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate Acs Photonics. 7: 1662-1666. DOI: 10.1021/Acsphotonics.0C00766  0.361
2020 Huang X, Li D, Su P, Fu H, Chen H, Yang C, Zhou J, Qi X, Yang T, Montes J, Deng X, Fu K, DenBaars SP, Nakamura S, Ponce FA, et al. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures Nano Energy. 76: 105013. DOI: 10.1016/J.Nanoen.2020.105013  0.666
2020 Khoury M, Li H, Li P, Chow YC, Bonef B, Zhang H, Wong MS, Pinna S, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication Nano Energy. 67: 104236. DOI: 10.1016/J.Nanoen.2019.104236  0.477
2020 Chung RB, Sampath AV, Nakamura S. Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate Journal of Crystal Growth. 533: 125467. DOI: 10.1016/J.Jcrysgro.2019.125467  0.329
2020 Pasayat SS, Lund C, Tsukada Y, Catalano M, Wang L, Kim MJ, Nakamura S, Keller S, Mishra UK. Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD Journal of Electronic Materials. 49: 3450-3454. DOI: 10.1007/S11664-019-07875-3  0.386
2020 Reilly CE, Nakamura S, DenBaars SP, Keller S. MOCVD Growth and Characterization of InN Quantum Dots Physica Status Solidi B-Basic Solid State Physics. 257: 1900508. DOI: 10.1002/Pssb.201900508  0.332
2020 Reilly CE, Lheureux G, Cozzan C, Zeitz E, Margalith T, Nakamura S, Seshadri R, Weisbuch C, DenBaars SP. Transmission Geometry Laser Lighting with A Compact Emitter Physica Status Solidi (a). DOI: 10.1002/Pssa.202000391  0.36
2020 Kearns JA, Back J, Palmquist NC, Cohen DA, DenBaars SP, Nakamura S. Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions Physica Status Solidi (a). 217: 1900718. DOI: 10.1002/Pssa.201900718  0.341
2019 Khoury M, Li H, Zhang H, Bonef B, Wong M, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP. Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces. PMID 31769651 DOI: 10.1021/Acsami.9B17525  0.4
2019 Lee S, Forman CA, Kearns J, Leonard JT, Cohen DA, Nakamura S, DenBaars SP. Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts. Optics Express. 27: 31621-31628. PMID 31684392 DOI: 10.1364/Oe.27.031621  0.422
2019 Anderson R, Cohen D, Mehari S, Nakamura S, DenBaars S. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. Optics Express. 27: 22764-22769. PMID 31510562 DOI: 10.1364/Oe.27.022764  0.44
2019 Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/Oe.27.0A1074  0.438
2019 Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/Oe.27.024717  0.404
2019 Li H, Wong MS, Khoury M, Bonef B, Zhang H, Chow Y, Li P, Kearns J, Taylor AA, De Mierry P, Hassan Z, Nakamura S, DenBaars SP. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template. Optics Express. 27: 24154-24160. PMID 31510309 DOI: 10.1364/Oe.27.024154  0.47
2019 Kearns JA, Back J, Cohen DA, DenBaars SP, Nakamura S. Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers. Optics Express. 27: 23707-23713. PMID 31510271 DOI: 10.1364/Oe.27.023707  0.419
2019 Zhang H, Cohen DA, Chan P, Wong MS, Mehari S, Becerra DL, Nakamura S, DenBaars SP. Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating. Optics Letters. 44: 3106-3109. PMID 31199392 DOI: 10.1364/Ol.44.003106  0.34
2019 Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27: 8327-8334. PMID 31052652 DOI: 10.1364/Oe.27.008327  0.423
2019 Wong MS, Lee C, Myers DJ, Hwang D, Kearns JA, Li T, Speck JS, Nakamura S, DenBaars SP. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation Applied Physics Express. 12: 97004. DOI: 10.7567/1882-0786/Ab3949  0.391
2019 Abbas AS, Alyamani AY, Nakamura S, Dembaars SP. Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical undercut etching Applied Physics Express. 12: 36503. DOI: 10.7567/1882-0786/Ab028D  0.442
2019 Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region Japanese Journal of Applied Physics. 58: 20902. DOI: 10.7567/1347-4065/Aaf4B4  0.388
2019 Myers DJ, Gelžinytė K, Alhassan AI, Martinelli L, Peretti J, Nakamura S, Weisbuch C, Speck JS. Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop Physical Review B. 100: 125303. DOI: 10.1103/Physrevb.100.125303  0.31
2019 Reilly CE, Bonef B, Nakamura S, Speck JS, DenBaars SP, Keller S. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition Semiconductor Science and Technology. 34: 125002. DOI: 10.1088/1361-6641/Ab4B93  0.375
2019 Pasayat SS, Gupta C, Acker-James D, Cohen DA, DenBaars SP, Nakamura S, Keller S, Mishra UK, Fellow I. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN Semiconductor Science and Technology. 34: 115020. DOI: 10.1088/1361-6641/Ab4372  0.321
2019 Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S. Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors Semiconductor Science and Technology. 34: 75017. DOI: 10.1088/1361-6641/Ab1204  0.42
2019 SaifAddin BK, Almogbel A, Zollner CJ, Foronda H, Alyamani A, Albadri A, Iza M, Nakamura S, DenBaars SP, Speck JS. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC Semiconductor Science and Technology. 34: 35007-35007. DOI: 10.1088/1361-6641/Aaf58F  0.438
2019 Zollner CJ, Almogbel A, Yao Y, SaifAddin BK, Wu F, Iza M, DenBaars SP, Speck JS, Nakamura S. Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition Applied Physics Letters. 115: 161101. DOI: 10.1063/1.5123623  0.355
2019 Reilly CE, Lund C, Nakamura S, Mishra UK, DenBaars SP, Keller S. Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition Applied Physics Letters. 114: 241103. DOI: 10.1063/1.5109734  0.449
2019 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, DenBaars SP, Speck JS. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Applied Physics Letters. 114: 151103. DOI: 10.1063/1.5092585  0.423
2019 Huang X, Li W, Fu H, Li D, Zhang C, Chen H, Fang Y, Fu K, DenBaars SP, Nakamura S, Goodnick SM, Ning C, Fan S, Zhao Y. High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects Acs Photonics. 6: 2096-2103. DOI: 10.1021/Acsphotonics.9B00655  0.66
2019 Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S. Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Journal of Crystal Growth. 507: 118-123. DOI: 10.1016/J.Jcrysgro.2018.11.008  0.353
2018 Wong MS, Hwang D, Alhassan AI, Lee C, Ley R, Nakamura S, DenBaars SP. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Optics Express. 26: 21324-21331. PMID 30119435 DOI: 10.1364/Oe.26.021324  0.441
2018 Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express. 26: 12490-12498. PMID 29801286 DOI: 10.1364/Oe.26.012490  0.427
2018 Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284 DOI: 10.1364/Oe.26.00A219  0.402
2018 Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761 DOI: 10.1364/Oe.26.005591  0.465
2018 Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. Optics Express. 26: 1564-1572. PMID 29402030 DOI: 10.1364/Oe.26.001564  0.414
2018 Cozzan C, Lheureux G, O'Dea N, Levin EE, Graser J, Sparks TD, Nakamura S, DenBaars SP, Weisbuch C, Seshadri R. Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting. Acs Applied Materials & Interfaces. PMID 29400946 DOI: 10.1021/Acsami.8B00074  0.364
2018 Lee S, Forman CA, Lee C, Kearns J, Young EC, Leonard JT, Cohen DA, Speck JS, Nakamura S, DenBaars SP. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition Applied Physics Express. 11: 62703. DOI: 10.7567/Apex.11.062703  0.464
2018 Alhassan AI, Young EC, Alyamani AY, Albadri A, Nakamura S, DenBaars SP, Speck JS. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction Applied Physics Express. 11: 42101. DOI: 10.7567/Apex.11.042101  0.493
2018 Khoury M, Li H, Bonef B, Kuritzky LY, Mughal AJ, Nakamura S, Speck JS, DenBaars SP. Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations Applied Physics Express. 11: 36501. DOI: 10.7567/Apex.11.036501  0.45
2018 Hwang D, Mughal AJ, Wong MS, Alhassan AI, Nakamura S, DenBaars SP. Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Applied Physics Express. 11: 12102. DOI: 10.7567/Apex.11.012102  0.474
2018 Zhao Y, Fu H, Wang GT, Nakamura S. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Advances in Optics and Photonics. 10: 246. DOI: 10.1364/Aop.10.000246  0.707
2018 Hahn W, Lentali J-, Polovodov P, Young N, Nakamura S, Speck J, Weisbuch C, Filoche M, Wu Y-, Piccardo M, Maroun F, Martinelli L, Lassailly Y, Peretti J. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy Physical Review B. 98: 45305. DOI: 10.1103/Physrevb.98.045305  0.362
2018 Lund C, Agarwal A, Romanczyk B, Mates T, Nakamura S, DenBaars SP, Mishra UK, Keller S. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology. 33: 095014. DOI: 10.1088/1361-6641/Aad5Cf  0.386
2018 Yonkee BP, Young EC, DenBaars SP, Speck JS, Nakamura S. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum Semiconductor Science and Technology. 33: 15015. DOI: 10.1088/1361-6641/Aa972C  0.331
2018 Espenlaub AC, Alhassan AI, Nakamura S, Weisbuch C, Speck JS. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes Applied Physics Letters. 112: 141106. DOI: 10.1063/1.5021475  0.45
2018 Lund C, Catalano M, Wang L, Wurm C, Mates T, Kim M, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics. 123: 055702. DOI: 10.1063/1.5009904  0.457
2018 Mounir C, Koslow IL, Wernicke T, Kneissl M, Kuritzky LY, Adamski NL, Oh SH, Pynn CD, DenBaars SP, Nakamura S, Speck JS, Schwarz UT. On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells Journal of Applied Physics. 123: 85705. DOI: 10.1063/1.5008263  0.465
2018 Forman CA, Lee S, Young EC, Kearns JA, Cohen DA, Leonard JT, Margalith T, DenBaars SP, Nakamura S. Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact Applied Physics Letters. 112: 111106. DOI: 10.1063/1.5007746  0.446
2018 Griffiths S, Pimputkar S, Kearns J, Malkowski TF, Doherty MF, Speck JS, Nakamura S. Growth kinetics of basic ammonothermal gallium nitride crystals Journal of Crystal Growth. 501: 74-80. DOI: 10.1016/J.Jcrysgro.2018.08.028  0.324
2018 Malkowski TF, Speck JS, DenBaars SP, Nakamura S. An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures Journal of Crystal Growth. 499: 85-89. DOI: 10.1016/J.Jcrysgro.2018.07.025  0.306
2018 Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers Journal of Crystal Growth. 483: 134-139. DOI: 10.1016/J.Jcrysgro.2017.11.027  0.363
2018 Feezell D, Nakamura S. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting Comptes Rendus Physique. 19: 113-133. DOI: 10.1016/J.Crhy.2017.12.001  0.373
2017 Kuritzky LY, Espenlaub AC, Yonkee BP, Pynn CD, DenBaars SP, Nakamura S, Weisbuch C, Speck JS. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. Optics Express. 25: 30696-30707. PMID 29221097 DOI: 10.1364/Oe.25.030696  0.328
2017 Li H, Khoury M, Bonef B, Alhassan AI, Mughal AJ, Azimah E, Samsudin MEA, De Mierry P, Nakamura S, Speck J, DenBaars SP. Efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes on low defect density (11-22) GaN/sapphire templates. Acs Applied Materials & Interfaces. PMID 28960058 DOI: 10.1021/Acsami.7B11718  0.471
2017 Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239 DOI: 10.1364/Oe.25.017480  0.413
2017 Myzaferi A, Reading AH, Farrell RM, Cohen DA, Nakamura S, DenBaars SP. Semipolar III-nitride laser diodes with zinc oxide cladding. Optics Express. 25: 16922-16930. PMID 28789192 DOI: 10.1364/Oe.25.016922  0.415
2017 Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. Optics Express. 25: 3841-3849. PMID 28241595 DOI: 10.1364/Oe.25.003841  0.464
2017 Mughal AJ, Young EC, Alhassan AI, Back J, Nakamura S, Speck JS, DenBaars SP. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs Applied Physics Express. 10: 121006. DOI: 10.7567/Apex.10.121006  0.426
2017 Lund C, Hestroffer K, Hatui N, Nakamura S, DenBaars SP, Mishra UK, Keller S. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates Applied Physics Express. 10: 111001. DOI: 10.7567/Apex.10.111001  0.314
2017 Khoury M, Li H, Kuritzky LY, Mughal AJ, DeMierry P, Nakamura S, Speck JS, DenBaars SP. 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire Applied Physics Express. 10: 106501. DOI: 10.7567/Apex.10.106501  0.489
2017 Shen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, Nakamura S, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system Applied Physics Express. 10: 42201. DOI: 10.7567/Apex.10.042201  0.42
2017 Hwang D, Mughal A, Pynn CD, Nakamura S, DenBaars SP. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs Applied Physics Express. 10: 32101. DOI: 10.7567/Apex.10.032101  0.446
2017 Lee S, Mishkat-Ul-Masabih S, Leonard JT, Feezell DF, Cohen DA, Speck JS, Nakamura S, DenBaars SP. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser Applied Physics Express. 10: 11001. DOI: 10.7567/Apex.10.011001  0.426
2017 Uždavinys TK, Becerra DL, Ivanov R, DenBaars SP, Nakamura S, Speck JS, Marcinkevičius S. Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence Optical Materials Express. 7: 3116-3123. DOI: 10.1364/Ome.7.003116  0.375
2017 Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, Speck JS, Denbaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications Proceedings of Spie. 10104. DOI: 10.1117/12.2251144  0.423
2017 Ivanov R, Marcinkevičius S, Mensi MD, Martinez O, Kuritzky LY, Myers DJ, Nakamura S, Speck JS. Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.064033  0.388
2017 Enatsu Y, Gupta C, Keller S, Nakamura S, Mishra UK. P–n junction diodes with polarization induced p-type graded InxGa1–xN layer Semiconductor Science and Technology. 32: 105013. DOI: 10.1088/1361-6641/Aa89D7  0.402
2017 Lund C, Romanczyk B, Catalano M, Wang Q, Li W, DiGiovanni D, Kim MJ, Fay P, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices Journal of Applied Physics. 121: 185707. DOI: 10.1063/1.4983300  0.46
2017 Huang X, Fu H, Chen H, Zhang X, Lu Z, Montes J, Iza M, DenBaars SP, Nakamura S, Zhao Y. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency Applied Physics Letters. 110: 161105. DOI: 10.1063/1.4980139  0.7
2017 Bonef B, Catalano M, Lund C, Denbaars SP, Nakamura S, Mishra UK, Kim MJ, Keller S. Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Applied Physics Letters. 110: 143101. DOI: 10.1063/1.4979786  0.364
2017 Ivanov R, Marcinkevičius S, Uždavinys TK, Kuritzky LY, Nakamura S, Speck JS. Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells Applied Physics Letters. 110: 31109. DOI: 10.1063/1.4974297  0.414
2017 Mensi M, Ivanov R, Uzdavinys TK, Kelchner KM, Nakamura S, DenBaars SP, Speck JS, Marcinkevicius S. Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy Acs Photonics. 5: 528-534. DOI: 10.1021/Acsphotonics.7B01061  0.318
2017 Li P, Bonef B, Khoury M, Lheureux G, Li H, Kang J, Nakamura S, DenBaars SP. Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes Superlattices and Microstructures. 113: 684-689. DOI: 10.1016/J.Spmi.2017.11.058  0.417
2017 Forman C, Leonard J, Yonkee B, Pynn C, Mates T, Cohen D, Farrell R, Margalith T, DenBaars S, Speck J, Nakamura S. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Journal of Crystal Growth. 464: 197-200. DOI: 10.1016/J.Jcrysgro.2016.11.058  0.39
2017 Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S. Growth of high purity N-polar (In,Ga)N films Journal of Crystal Growth. 464: 127-131. DOI: 10.1016/J.Jcrysgro.2016.11.039  0.344
2017 Mughal AJ, Carberry B, Speck JS, Nakamura S, DenBaars SP. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films Journal of Electronic Materials. 46: 1821-1825. DOI: 10.1007/S11664-016-5235-5  0.378
2017 Mishkat-Ul-Masabih S, Leonard J, Cohen D, Nakamura S, Feezell D. Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs Physica Status Solidi (a). 214: 1600819. DOI: 10.1002/Pssa.201600819  0.339
2016 Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express. 24: 22875-22880. PMID 27828354 DOI: 10.1364/Oe.24.022875  0.428
2016 Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634 DOI: 10.1364/Oe.24.020281  0.417
2016 Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754 DOI: 10.1364/Oe.24.017868  0.478
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426 DOI: 10.1364/Ol.41.002608  0.442
2016 Yonkee BP, Young EC, Lee C, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Optics Express. 24: 7816-7822. PMID 27137064 DOI: 10.1364/Oe.24.007816  0.435
2016 Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/Oe.24.00A215  0.411
2016 Oh SH, Yonkee BP, Cantore M, Farrell RM, Speck JS, Nakamura S, DenBaars SP. Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W Applied Physics Express. 9. DOI: 10.7567/Apex.9.102102  0.5
2016 Becerra DL, Cohen DA, Farrell RM, Denbaars SP, Nakamura S. Effects of active region design on gain and carrier injection and transport of CW (2021) semipolar InGaN laser diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.092104  0.44
2016 Enatsu Y, Gupta C, Laurent M, Keller S, Nakamura S, Mishra UK. Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502. DOI: 10.7567/Apex.9.075502  0.328
2016 Yonkee BP, SaifAddin B, Leonard JT, DenBaars SP, Nakamura S. Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal Applied Physics Express. 9. DOI: 10.7567/Apex.9.056502  0.43
2016 Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, Nakamura S, Speck JS. Hybrid tunnel junction contacts to III-nitride light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.022102  0.46
2016 Mensi MD, Becerra DL, Ivanov R, Marcinkevičius S, Nakamura S, Denbaars SP, Speck JS. Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells Optical Materials Express. 6: 39-45. DOI: 10.1364/Ome.6.000039  0.396
2016 Kowsz SJ, Pynn CD, Wu F, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission Proceedings of Spie. 9748. DOI: 10.1117/12.2209661  0.481
2016 Leonard JT, Young EC, Yonkee BP, Cohen DA, Shen C, Margalith T, Ng TK, Denbaars SP, Ooi BS, Speck JS, Nakamura S. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748. DOI: 10.1117/12.2206211  0.446
2016 Fu H, Lu Z, Zhao X, Zhang Y, DenBaars SP, Nakamura S, Zhao Y. Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Journal of Display Technology. 12: 736-741. DOI: 10.1109/Jdt.2016.2521618  0.704
2016 Kuritzky LY, Becerra DL, Abbas AS, Nedy J, Nakamura S, Denbaars SP, Cohen DA. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/7/075008  0.407
2016 Yonkee BP, Young EC, DenBaars SP, Nakamura S, Speck JS. Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction Applied Physics Letters. 109: 191104. DOI: 10.1063/1.4967501  0.486
2016 Cozzan C, Brady MJ, O’Dea N, Levin EE, Nakamura S, DenBaars SP, Seshadri R. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting Aip Advances. 6: 105005. DOI: 10.1063/1.4964925  0.399
2016 Lee C, Zhang C, Becerra DL, Lee S, Forman CA, Oh SH, Farrell RM, Speck JS, Nakamura S, Bowers JE, Denbaars SP. Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz Applied Physics Letters. 109. DOI: 10.1063/1.4962430  0.431
2016 Myzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, Speck JS, Denbaars SP. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes Applied Physics Letters. 109. DOI: 10.1063/1.4960791  0.4
2016 Pynn CD, Kowsz SJ, Oh SH, Gardner H, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy Applied Physics Letters. 109: 41107. DOI: 10.1063/1.4960001  0.467
2016 Kowsz SJ, Pynn CD, Oh SH, Farrell RM, DenBaars SP, Nakamura S. Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission Journal of Applied Physics. 120: 33102. DOI: 10.1063/1.4958308  0.468
2016 Suihkonen S, Pimputkar S, Speck JS, Nakamura S. Infrared absorption of hydrogen-related defects in ammonothermal GaN Applied Physics Letters. 108. DOI: 10.1063/1.4952388  0.76
2016 Becerra DL, Kuritzky LY, Nedy J, Saud Abbas A, Pourhashemi A, Farrell RM, Cohen DA, DenBaars SP, Speck JS, Nakamura S. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes with chemically assisted ion beam etched facets Applied Physics Letters. 108. DOI: 10.1063/1.4943143  0.399
2016 Young NG, Farrell RM, Oh S, Cantore M, Wu F, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes Applied Physics Letters. 108. DOI: 10.1063/1.4941815  0.477
2016 Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, Speck JS, Denbaars SP, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture Applied Physics Letters. 108. DOI: 10.1063/1.4940380  0.465
2016 Pourhashemi A, Farrell RM, Cohen DA, Becerra DL, DenBaars SP, Nakamura S. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates Electronics Letters. 52: 2003-2005. DOI: 10.1049/El.2016.3055  0.433
2016 Mughal AJ, Oh S, Myzaferi A, Nakamura S, Speck JS, DenBaars SP. High-power LEDs using Ga-doped ZnO current-spreading layers Electronics Letters. 52: 304-306. DOI: 10.1049/El.2015.3982  0.416
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/Acsphotonics.5B00599  0.485
2016 Pimputkar S, Malkowski TF, Griffiths S, Espenlaub A, Suihkonen S, Speck JS, Nakamura S. Stability of materials in supercritical ammonia solutions Journal of Supercritical Fluids. 110: 193-229. DOI: 10.1016/J.Supflu.2015.10.020  0.744
2016 Pimputkar S, Nakamura S. Decomposition of supercritical ammonia and modeling of supercritical ammonia-nitrogen-hydrogen solutions with applicability toward ammonothermal conditions Journal of Supercritical Fluids. 107: 17-30. DOI: 10.1016/J.Supflu.2015.07.032  0.742
2016 Young NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications Journal of Crystal Growth. 455: 105-110. DOI: 10.1016/J.Jcrysgro.2016.09.074  0.448
2016 Griffiths S, Pimputkar S, Speck JS, Nakamura S. On the solubility of gallium nitride in supercritical ammonia–sodium solutions Journal of Crystal Growth. 456: 5-14. DOI: 10.1016/J.Jcrysgro.2016.08.041  0.345
2016 Sintonen S, Kivisaari P, Pimputkar S, Suihkonen S, Schulz T, Speck JS, Nakamura S. Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN Journal of Crystal Growth. 456: 43-50. DOI: 10.1016/J.Jcrysgro.2016.08.040  0.345
2016 Dollen PV, Pimputkar S, Alreesh MA, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes Journal of Crystal Growth. 456: 67-72. DOI: 10.1016/J.Jcrysgro.2016.08.018  0.334
2016 Dollen PV, Pimputkar S, Alreesh MA, Albrithen H, Suihkonen S, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part I: System development Journal of Crystal Growth. 456: 58-66. DOI: 10.1016/J.Jcrysgro.2016.07.044  0.33
2016 Pimputkar S, Speck JS, Nakamura S. Basic ammonothermal GaN growth in molybdenum capsules Journal of Crystal Growth. 456: 15-20. DOI: 10.1016/J.Jcrysgro.2016.07.034  0.341
2016 Megalini L, Shenoy R, Rose K, Speck JP, Bowers JE, Nakamura S, Cohen DA, DenBaars SP. Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016) Physica Status Solidi (a). 213: 1096-1096. DOI: 10.1002/Pssa.201670624  0.319
2016 Megalini L, Shenoy R, Rose K, Speck JP, Bowers JE, Nakamura S, Cohen DA, Denbaars SP. Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532540  0.376
2015 Lee C, Shen C, Oubei HM, Cantore M, Janjua B, Ng TK, Farrell RM, El-Desouki MM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. Optics Express. 23: 29779-87. PMID 26698461 DOI: 10.1364/Oe.23.029779  0.363
2015 Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/Srep18690  0.568
2015 Maki N, Demitsu T, Umemoto N, Nagashima K, Nakamura T, Kakurai M, Nakamura S, Yamada T, Ishii N, Hashimoto T. Possible paraneoplastic syndrome case of bullous pemphigoid with immunoglobulin G anti-BP180 C-terminal domain antibodies associated with psoriasis and primary macroglobulinemia. The Journal of Dermatology. PMID 26507447 DOI: 10.1111/1346-8138.13170  0.417
2015 Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595 DOI: 10.1364/Oe.23.016232  0.387
2015 Megalini L, Kuritzky LY, Leonard JT, Shenoy R, Rose K, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions Applied Physics Express. 8. DOI: 10.7567/Apex.8.066502  0.43
2015 Kuritzky LY, Myers DJ, Nedy J, Kelchner KM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.061002  0.427
2015 Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, Nakamura S, DenBaars SP, Cohen DA. Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture Applied Physics Express. 8. DOI: 10.7567/Apex.8.042701  0.429
2015 Nakamura S. Background story of the invention of efficient blue InGaN light emitting diodes International Journal of Modern Physics B. 29. DOI: 10.3367/Ufnr.2014.12.037747  0.373
2015 Nakamura S. Future and present technologies of solid state lighting (Presentation Video) Proceedings of Spie. 9383. DOI: 10.1117/12.2197203  0.423
2015 Marcinkevičius S, Gelžinyte K, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Spatial variations of optical properties of semipolar InGaN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076973  0.691
2015 Nakamura S. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes Reviews of Modern Physics. 87. DOI: 10.1103/Revmodphys.87.1139  0.373
2015 Nedy JG, Young NG, Kelchner KM, Hu Y, Farrell RM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085019  0.482
2015 Yonkee BP, Farrell RM, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of low resistance ohmic contacts to p-type (2021) GaN Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075007  0.376
2015 Marcinkevičius S, Sztein A, Nakamura S, Speck JS. Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/115017  0.807
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.404
2015 Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, DenBaars SP, Speck JS. Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4936386  0.656
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Denbaars SP, Speck JS, Nakamura S. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts Journal of Applied Physics. 118. DOI: 10.1063/1.4931883  0.39
2015 Kowsz SJ, Pynn CD, Oh SH, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4930304  0.484
2015 Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944  0.44
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365  0.445
2015 Piccardo M, Iveland J, Martinelli L, Nakamura S, Choi JW, Speck JS, Weisbuch C, Peretti J. Low-energy electro- and photo-emission spectroscopy of GaN materials and devices Journal of Applied Physics. 117. DOI: 10.1063/1.4913928  0.407
2015 Gelžinyte K, Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, Denbaars SP, Speck JS. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4905854  0.693
2015 Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647  0.72
2015 Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Journal of Crystal Growth. 432: 49-53. DOI: 10.1016/J.Jcrysgro.2015.09.016  0.779
2015 Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202-1) AlGaN/GaN buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.081  0.475
2015 Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62. DOI: 10.1016/J.Jcrysgro.2014.10.032  0.362
2014 Takechi H, Mori T, Hashimoto T, Nakamura S. Present status and road map to achieve inclusive and holistic care for dementia in a Japanese community: analysis using the Delphi method. Dementia and Geriatric Cognitive Disorders. 38: 186-99. PMID 24732454 DOI: 10.1159/000358821  0.398
2014 Demitsu T, Yamada T, Nakamura S, Kakurai M, Dohmoto T, Kamiya K, Aoyama Y, Iwatsuki K, Yamagami J, Ohyama B, Ohata C, Koga H, Hashimoto T. Detection of autoantibodies to precursor proteins of desmogleins in sera of a patient with Bowen carcinoma. Acta Dermato-Venereologica. 94: 601-3. PMID 24473793 DOI: 10.2340/00015555-1776  0.389
2014 Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/Apex.7.031003  0.474
2014 Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503  0.656
2014 Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927  0.778
2014 Piccardo M, Martinelli L, Iveland J, Young N, Denbaars SP, Nakamura S, Speck JS, Weisbuch C, Peretti J. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.235124  0.314
2014 Becerra DL, Zhao Y, Oh SH, Pynn CD, Fujito K, Denbaars SP, Nakamura S. High-power low-droop violet semipolar (30 3 ¯ 1 ¯) InGaN/GaN light-emitting diodes with thick active layer design Applied Physics Letters. 105. DOI: 10.1063/1.4900793  0.733
2014 Marcinkevičius S, Gelžinyte K, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4896034  0.691
2014 Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, DenBaars SP, Nakamura S, Feezell DF. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] Applied Physics Letters. 105: 89902. DOI: 10.1063/1.4894638  0.804
2014 Iveland J, Piccardo M, Martinelli L, Peretti J, Choi JW, Young N, Nakamura S, Speck JS, Weisbuch C. Origin of electrons emitted into vacuum from InGaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4892473  0.39
2014 Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512  0.701
2014 Ji Y, Liu W, Erdem T, Chen R, Tiam Tan S, Zhang ZH, Ju Z, Zhang X, Sun H, Sun XW, Zhao Y, Denbaars SP, Nakamura S, Volkan Demir H. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes Applied Physics Letters. 104. DOI: 10.1063/1.4870840  0.708
2014 Marcinkevičius S, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well Applied Physics Letters. 104. DOI: 10.1063/1.4869459  0.684
2014 Sztein A, Bowers JE, Denbaars SP, Nakamura S. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties Applied Physics Letters. 104. DOI: 10.1063/1.4863420  0.803
2014 Pimputkar S, Kawabata S, Speck JS, Nakamura S. Improved growth rates and purity of basic ammonothermal GaN Journal of Crystal Growth. 403: 7-17. DOI: 10.1016/J.Jcrysgro.2014.06.017  0.771
2014 Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027  0.376
2014 Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693. DOI: 10.1002/Pssc.201300430  0.422
2013 Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53  0.702
2013 Yamada T, Nakamura S, Demitsu T, Nakamura T, Iida E, Yoneda K, Fukuda S, Hashimoto T. Paraneoplastic pemphigus mimicking toxic epidermal necrolysis associated with B-cell lymphoma. The Journal of Dermatology. 40: 286-8. PMID 23356911 DOI: 10.1111/1346-8138.12083  0.401
2013 Mitate E, Kawano S, Nakao Y, Goto Y, Kobayashi I, Onozawa K, Hashimoto T, Nakamura S. Concurrence of autoantibodies to both laminin γ1 and γ2 subunits in a patient with kidney rejection response. Acta Dermato-Venereologica. 93: 114-5. PMID 22735827 DOI: 10.2340/00015555-1395  0.389
2013 Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc10  0.473
2013 Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08  0.734
2013 Bryant BN, Young EC, Wu F, Fujito K, Nakamura S, Speck JS. Basal plane stacking fault suppression by nitrogen carrier gas in m-plane GaN regrowth by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.115502  0.365
2013 Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104  0.452
2013 Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/Apex.6.062102  0.73
2013 Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.052103  0.736
2013 Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277  0.846
2013 Hsu PS, Farrell RM, Weaver JJ, Fujito K, Denbaars SP, Speck JS, Nakamura S. Comparison of polished and dry etched semipolar (1122) III-Nitride laser facets Ieee Photonics Technology Letters. 25: 2105-2107. DOI: 10.1109/Lpt.2013.2281608  0.629
2013 Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/Jdt.2012.2227682  0.47
2013 Armstrong AM, Kelchner K, Nakamura S, Denbaars SP, Speck JS. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103. DOI: 10.1063/1.4841575  0.455
2013 Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699  0.475
2013 Shan Hsu P, Wu F, Young EC, Romanov AE, Fujito K, Denbaars SP, Speck JS, Nakamura S. Blue and aquamarine stress-relaxed semipolar (11 2 ̄ 2) laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826087  0.425
2013 Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589  0.687
2013 Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171  0.828
2013 Denault KA, Cantore M, Nakamura S, Denbaars SP, Seshadri R. Efficient and stable laser-driven white lighting Aip Advances. 3. DOI: 10.1063/1.4813837  0.405
2013 Pesach A, Gross E, Huang C-, Lin Y-, Vardi A, Schacham SE, Nakamura S, Bahir G. Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors Applied Physics Letters. 103: 22110. DOI: 10.1063/1.4813395  0.444
2013 Sztein A, Haberstroh J, Bowers JE, Denbaars SP, Nakamura S. Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN Journal of Applied Physics. 113. DOI: 10.1063/1.4804174  0.787
2013 Zhao Y, Wu F, Huang CY, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, Denbaars SP, Nakamura S. Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization Applied Physics Letters. 102. DOI: 10.1063/1.4794864  0.681
2013 Farrell RM, Haeger DA, Fujito K, Denbaars SP, Nakamura S, Speck JS. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4790636  0.462
2013 Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, Denbaars SP, Speck JS. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Journal of Crystal Growth. 382: 80-86. DOI: 10.1016/J.Jcrysgro.2013.08.013  0.478
2013 Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Journal of Crystal Growth. 369: 14-20. DOI: 10.1016/J.Jcrysgro.2013.01.031  0.356
2013 Pimputkar S, Kawabata S, Speck JS, Nakamura S. Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane Journal of Crystal Growth. 368: 67-71. DOI: 10.1016/J.Jcrysgro.2013.01.022  0.769
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042  0.83
2012 Ito J, Hashimoto T, Nakamura S, Aita Y, Yamazaki T, Schlegel W, Takimoto K, Maturana AD. Splicing transitions of the anchoring protein ENH during striated muscle development. Biochemical and Biophysical Research Communications. 421: 232-8. PMID 22497889 DOI: 10.1016/j.bbrc.2012.03.142  0.402
2012 Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP. High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. Optics Express. 20: A13-9. PMID 22379670 DOI: 10.1364/Oe.20.000A13  0.404
2012 Choi SB, Bae SY, Lee DS, Kong BH, Cho HK, Song JH, Ahn BJ, Keading JF, Nakamura S, DenBaars SP, Speck JS. Optical characterization of double peak behavior in {101̄1} semipolar light-emitting diodes on miscut m-plane sapphire substrates Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.052101  0.496
2012 Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103  0.709
2012 Pan CC, Tanaka S, Wu F, Zhao Y, Speck JS, Nakamura S, Den Baars SP, Feezel D. High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.062103  0.727
2012 Brinkley SE, Keraly CL, Sonoda J, Weisbuch C, Speck JS, Nakamura S, DenBaars SP. Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.032104  0.388
2012 Chida K, Hashisaka M, Yamauchi Y, Nakamura S, Arakawa T, Machida T, Kobayashi K, Ono T. Shot noise induced by electron-nuclear spin-flip scattering in a nonequilibrium quantum wire Physical Review B. 85: 41309. DOI: 10.1103/Physrevb.85.041309  0.311
2012 Hardy MT, Nakamura S, Speck JS, Denbaars SP. Suppression of relaxation in (202̄1) InGaN/GaN laser diodes using limited area epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4770367  0.477
2012 Sztein A, Bowers JE, Denbaars SP, Nakamura S. Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates Journal of Applied Physics. 112. DOI: 10.1063/1.4759287  0.821
2012 Young EC, Wu F, Romanov AE, Haeger DA, Nakamura S, Denbaars SP, Cohen DA, Speck JS. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Applied Physics Letters. 101. DOI: 10.1063/1.4757423  0.42
2012 Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791  0.743
2012 Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693  0.597
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.47
2012 Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106  0.699
2012 Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100  0.694
2012 Nishihara Y, Nakamura S, Kobayashi K, Ono T, Kohda M, Nitta J. Shot noise suppression in InGaAs/InGaAsP quantum channels Applied Physics Letters. 100: 203111. DOI: 10.1063/1.4718934  0.306
2012 Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465  0.586
2012 Shan Hsu P, Hardy MT, Young EC, Romanov AE, Denbaars SP, Nakamura S, Speck JS. Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4707160  0.32
2012 Jewell J, Simeonov D, Huang SC, Hu YL, Nakamura S, Speck J, Weisbuch C. Double embedded photonic crystals for extraction of guided light in light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4705735  0.403
2012 Haeger DA, Young EC, Chung RB, Wu F, Pfaff NA, Tsai M, Fujito K, Denbaars SP, Speck JS, Nakamura S, Cohen DA. 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100. DOI: 10.1063/1.4704560  0.77
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.427
2012 Chung RB, Chen HT, Pan CC, Ha JS, Denbaars SP, Nakamura S. The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN Applied Physics Letters. 100. DOI: 10.1063/1.3690878  0.713
2012 Henry TA, Armstrong A, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3687700  0.402
2012 Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850  0.425
2012 Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura S, DenBaars S, Speck J, Weisbuch C. High-brightness polarized light-emitting diodes Light: Science and Applications. 1. DOI: 10.1038/Lsa.2012.22  0.413
2011 Chung RB, Bierwagen O, Wu F, Keller S, Denbaars SP, Speck JS, Nakamura S. Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101001  0.728
2011 Hsiung C, Lin Y, Ohta H, DenBaars SP, Nakamura S. Ohmic Cathode Electrode on the Backside ofm-Plane and (20\bar21) Bulk GaN Substrates for Optical Device Applications Japanese Journal of Applied Physics. 50: 30208. DOI: 10.1143/Jjap.50.030208  0.552
2011 Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/Apex.4.092105  0.647
2011 Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104  0.705
2011 Schmidt MC, Poblenz C, Chang YC, Li B, Mondry MJ, Iveland J, Krames MR, Craig R, Raring JW, Speck JS, DenBaars SP, Nakamura S. High performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 8039. DOI: 10.1117/12.872023  0.409
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Fluctuation theorem and microreversibility in a quantum coherent conductor Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155431  0.307
2011 Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113  0.595
2011 Sztein A, Ohta H, Bowers JE, Denbaars SP, Nakamura S. High temperature thermoelectric properties of optimized InGaN Journal of Applied Physics. 110. DOI: 10.1063/1.3670966  0.792
2011 Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791  0.621
2011 Brinkley SE, Pfaff N, Denault KA, Zhang Z, Hintzen HT, Seshadri R, Nakamura S, Denbaars SP. Robust thermal performance of Sr 2Si 5N 8:Eu 2+: An efficient red emitting phosphor for light emitting diode based white lighting Applied Physics Letters. 99. DOI: 10.1063/1.3666785  0.418
2011 Zhao Y, Tanaka S, Yan Q, Huang C, Chung RB, Pan C, Fujito K, Feezell D, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] Applied Physics Letters. 99: 229902. DOI: 10.1063/1.3665683  0.807
2011 Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560  0.709
2011 Hsu PS, Young EC, Romanov AE, Fujito K, Denbaars SP, Nakamura S, Speck JS. Misfit dislocation formation via pre-existing threading dislocation glide in (11 2 2) semipolar heteroepitaxy Applied Physics Letters. 99. DOI: 10.1063/1.3628459  0.596
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850  0.427
2011 Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826  0.828
2011 Matioli E, Brinkley S, Kelchner KM, Nakamura S, Denbaars S, Speck J, Weisbuch C. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Applied Physics Letters. 98. DOI: 10.1063/1.3602319  0.425
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Lang JR, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Effect of doping and polarization on carrier collection in InGaN quantum well solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3595487  0.407
2011 Romanov AE, Young EC, Wu F, Tyagi A, Gallinat CS, Nakamura S, Denbaars SP, Speck JS. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3590141  0.59
2011 Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen D, Speck JS, Nakamura S, Denbaars SP. Polarized spontaneous emission from blue-green m -plane GaN-based light emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3541655  0.649
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.395
2011 Wu F, Tyagi A, Young EC, Romanov AE, Fujito K, DenBaars SP, Nakamura S, Speck JS. Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates Journal of Applied Physics. 109: 33505. DOI: 10.1063/1.3531577  0.652
2011 Tanaka S, Zhao Y, Koslow I, Pan CC, Chen HT, Sonoda J, Denbaars SP, Nakamura S. Droop improvement in high current range on PSS-LEDs Electronics Letters. 47: 335-336. DOI: 10.1049/El.2010.3306  0.705
2011 Hardy MT, Feezell DF, Denbaars SP, Nakamura S. Group III-nitride lasers: A materials perspective Materials Today. 14: 408-415. DOI: 10.1016/S1369-7021(11)70185-7  0.415
2011 Chung RB, Wu F, Shivaraman R, Keller S, Denbaars SP, Speck JS, Nakamura S. Growth study and impurity characterization of AlxIn 1-xN grown by metal organic chemical vapor deposition Journal of Crystal Growth. 324: 163-167. DOI: 10.1016/J.Jcrysgro.2011.04.025  0.726
2011 Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, Denbaars SP, Speck JS. Electroluminescence enhancement of (112̄2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Current Applied Physics. 11: 954-958. DOI: 10.1016/J.Cap.2011.01.001  0.798
2011 Hardy MT, Farrell RM, Hsu PS, Haeger DA, Kelchner K, Fujito K, Chakraborty A, Cohen DA, Nakamura S, Speck JS, Denbaars SP. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2226-2228. DOI: 10.1002/Pssc.201001149  0.649
2011 Hsu PS, Sonoda J, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Young EC, Romanov AE, Fujito K, Ohta H, Denbaars SP, Speck JS, Nakamura S. Blue InGaN/GaN laser diodes grown on (333̄1̄) free-standing GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2390-2392. DOI: 10.1002/Pssc.201001012  0.769
2011 Bryant BN, Kamber DS, Wu F, Nakamura S, Speck JS. Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1463-1466. DOI: 10.1002/Pssc.201000908  0.795
2010 Ohta H, DenBaars SP, Nakamura S. Future of group-III nitride semiconductor green laser diodes [Invited] Journal of the Optical Society of America B-Optical Physics. 27. DOI: 10.1364/Josab.27.000B45  0.452
2010 Koslow IL, Sonoda J, Chung RB, Pan CC, Brinkley S, Ohta H, Nakamura S, DenBaars SP. High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080203  0.78
2010 Zhao Y, Sonada J, Koslow I, Pan CC, Ohta H, Ha JS, DenBaars SP, Nakamura S. Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition Japanese Journal of Applied Physics. 49: 0702061-0702063. DOI: 10.1143/Jjap.49.070206  0.716
2010 Chung RB, Lin YD, Koslow I, Pfaff N, Ohta H, Ha J, DenBaars SP, Nakamura S. Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths Japanese Journal of Applied Physics. 49: 0702031-0702033. DOI: 10.1143/Jjap.49.070203  0.819
2010 Huang CY, Tyagi A, Lin YD, Hardy MT, Hsu PS, Fujito K, Ha JS, Ohta H, Speck JS, DenBaars SP, Nakamura S. Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122) (Al,In,Ga)N waveguide structures Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.010207  0.802
2010 Yamamoto S, Zhao Y, Pan CC, Chung RB, Fujito K, Sonoda J, DenBaars SP, Nakamura S. High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.122102  0.833
2010 Raring JW, Schmidt MC, Poblenz C, Chang YC, Mondry MJ, Li B, Iveland J, Walters B, Krames MR, Craig R, Rudy P, Speck JS, DenBaars SP, Nakamura S. High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.112101  0.419
2010 Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101  0.706
2010 Kelchner KM, Farrell RM, Lin YD, Hsu PS, Hardy MT, Wu F, Cohen DA, Ohta H, Speck JS, Nakamura S, DenBaars SP. Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.092103  0.732
2010 Lin Y, Yamamoto S, Huang C, Hsiung C, Wu F, Fujito K, Ohta H, Speck JS, DenBaars SP, Nakamura S. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes Applied Physics Express. 3: 82001. DOI: 10.1143/Apex.3.082001  0.751
2010 Hsu PS, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Fujito K, Ohta H, DenBaars SP, Speck JS, Nakamura S. InGaN/GaN blue laser diode grown on semipolar (303̄1) free-standing GaN substrates Applied Physics Express. 3: 10DUMY. DOI: 10.1143/Apex.3.052702  0.771
2010 Young EC, Wu F, Romanov AE, Tyagi A, Gallinat CS, DenBaars SP, Nakamura S, Speck JS. Lattice tilt and misfit dislocations in (112̄2) semipolar GaN heteroepitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.011004  0.571
2010 Tyagi A, Farrell MR, Kelchner KM, Huang CY, Hsu PS, Haeger DA, Hardy MT, Holder C, Fujito K, Cohen DA, Ohta H, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm Applied Physics Express. 3. DOI: 10.1143/Apex.3.011002  0.831
2010 Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Kebort D, Chang YC, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.849713  0.431
2010 Masui H, Nakamura S, DenBaars SP, Mishra UK. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges Ieee Transactions On Electron Devices. 57: 88-100. DOI: 10.1109/Ted.2009.2033773  0.447
2010 Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003  0.842
2010 Liuolia V, Pinos A, Marcinkevicius S, Lin YD, Ohta H, DenBaars SP, Nakamura S. Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy Applied Physics Letters. 97: 151106. DOI: 10.1063/1.3502482  0.382
2010 Liuolia V, Marcinkevičius S, Lin Y, Ohta H, DenBaars SP, Nakamura S. Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells Journal of Applied Physics. 108: 23101. DOI: 10.1063/1.3460278  0.577
2010 Wu F, Lin Y, Chakraborty A, Ohta H, DenBaars SP, Nakamura S, Speck JS. Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN Applied Physics Letters. 96: 231912. DOI: 10.1063/1.3447940  0.604
2010 Masui H, Nakamura S, DenBaars SP. Technique to evaluate the diode ideality factor of light-emitting diodes Applied Physics Letters. 96: 073509. DOI: 10.1063/1.3318285  0.417
2010 Huang C, Lin Y, Tyagi A, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Optical waveguide simulations for the optimization of InGaN-based green laser diodes Journal of Applied Physics. 107: 23101. DOI: 10.1063/1.3275325  0.778
2010 Farrell RM, Haeger DA, Chen X, Iza M, Hirai A, Kelchner KM, Fujito K, Chakraborty A, Keller S, Denbaars SP, Speck JS, Nakamura S. Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 313: 1-7. DOI: 10.1016/J.Jcrysgro.2010.08.060  0.445
2010 Shen H, Garrett GA, Wraback M, Zhong H, Tyagi A, DenBaars SP, Nakamura S, Speck JS. Polarization field crossover in semi-polar InGaN/GaN single quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2378-2381. DOI: 10.1002/Pssc.200983893  0.581
2010 Chen Z, Pei Y, Chu R, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors Physica Status Solidi (C). 7: 2404-2407. DOI: 10.1002/Pssc.200983890  0.755
2009 Im WB, Fourré Y, Brinkley S, Sonoda J, Nakamura S, DenBaars SP, Seshadri R. Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1-xSr2+xAlO5-xFx solid solutions for solid state white lighting. Optics Express. 17: 22673-9. PMID 20052193 DOI: 10.1364/Oe.17.022673  0.333
2009 Nakamura S, Riordan M. The dawn of miniature green lasers. Scientific American. 300: 70-5. PMID 19363923 DOI: 10.1038/Scientificamerican0409-70  0.328
2009 Feezell DF, Schmidt MC, DenBaars SP, Nakamura S. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes Mrs Bulletin. 34: 318-323. DOI: 10.1557/Mrs2009.93  0.427
2009 Nakamura S. Current Status of GaN-Based Solid-State Lighting Mrs Bulletin. 34: 101-107. DOI: 10.1557/Mrs2009.28  0.439
2009 Masui H, Sonoda J, Chakraborty A, Yamada H, Iso K, Pfaff N, Koslow I, Nakamura S, DenBaars SP. Customized filter cube in fluorescence microscope measurements of InGaN/GaN quantum-well characterization Japanese Journal of Applied Physics. 48: 0980031-0980032. DOI: 10.1143/Jjap.48.098003  0.439
2009 Masui H, Keller S, Fellows N, Fichtenbaum NA, Furukawa M, Nakamura S, Mishra UK, DenBaars SP. Luminescence characteristics of N-polar GaN and InGaN films grown by metal organic chemical vapor deposition Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.071003  0.431
2009 Zhong H, Tyagi A, Pfaff N, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Enhancing the light extraction efficiency of blue semipolar (101̄1̄) nitride-based light emitting diodes through surface patterning Japanese Journal of Applied Physics. 48: 030201. DOI: 10.1143/Jjap.48.030201  0.639
2009 Hardy MT, Kelchner KM, Lin YD, Hsu PS, Fujito K, Ohta H, Speck JS, Nakamura S, DenBaars SP. m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching Applied Physics Express. 2. DOI: 10.1143/Apex.2.121004  0.71
2009 Sztein A, Ohta H, Sonoda J, Ramu A, Bowers JE, DenBaars SP, Nakamura S. GaN-Based integrated lateral thermoelectric device for micro-power generation Applied Physics Express. 2. DOI: 10.1143/Apex.2.111003  0.803
2009 Lin YD, Hardy MT, Hsu PS, Kelchner KM, Huang CY, Haeger DA, Farrell RM, Fujito K, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Blue - Green ingan/gan laser diodes on miscut m - Plane gan substrate Applied Physics Express. 2. DOI: 10.1143/Apex.2.082102  0.793
2009 Kelchner KM, Lin YD, Hardy MT, Huang CY, Hsu PS, Farrell RM, Haeger DA, Kuo HC, Wu F, Fujito K, Cohen DA, Chakraborty A, Ohta H, Speck JS, Nakamura S, et al. Nonpolar ALGaN-cladding-free blue laser diodes with InGaN waveguiding Applied Physics Express. 2. DOI: 10.1143/Apex.2.071003  0.738
2009 Masui H, Asamizu H, Tyagi A, DeMille NF, Nakamura S, DenBaars SP. Correlation between optical polarization and luminescence morphology of (112̄2)-oriented InGan/GaN quantum-well structures Applied Physics Express. 2. DOI: 10.1143/Apex.2.071002  0.614
2009 Asamizu H, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides Applied Physics Express. 2: 21002. DOI: 10.1143/Apex.2.021002  0.455
2009 Masui H, Asamizu H, Melo T, Yamada H, Iso K, Cruz SC, Nakamura S, DenBaars SP. Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations Journal of Physics D: Applied Physics. 42: 135106. DOI: 10.1088/0022-3727/42/13/135106  0.443
2009 Tyagi A, Wu F, Young EC, Chakraborty A, Ohta H, Bhat R, Fujito K, DenBaars SP, Nakamura S, Speck JS. Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates Applied Physics Letters. 95: 251905. DOI: 10.1063/1.3275717  0.585
2009 Lin YD, Huang CY, Hardy MT, Hsu PS, Fujito K, Chakraborty A, Ohta H, Speck JS, Denbaars SP, Nakamura S. M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers Applied Physics Letters. 95. DOI: 10.1063/1.3212146  0.785
2009 Lin YD, Chakraborty A, Brinkley S, Kuo HC, Melo T, Fujito K, Speck JS, Denbaars SP, Nakamura S. Characterization of blue-green m -plane InGaN light emitting diodes Applied Physics Letters. 94. DOI: 10.1063/1.3167824  0.64
2009 Tamboli AC, Hirai A, Nakamura S, Denbaars SP, Hu EL. Photoelectrochemical etching of p -type GaN heterostructures Applied Physics Letters. 94. DOI: 10.1063/1.3120545  0.387
2009 Newman S, Brown D, Chung R, Keller S, Denbaars SP, Nakamura S, Mishra UK. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer Applied Physics Letters. 94: 112108. DOI: 10.1063/1.3103210  0.743
2009 Vampola KJ, Iza M, Keller S, DenBaars SP, Nakamura S. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures Applied Physics Letters. 94. DOI: 10.1063/1.3081059  0.415
2009 Saito M, Yamada H, Iso K, Sato H, Hirasawa H, Kamber DS, Hashimoto T, Denbaars SP, Speck JS, Nakamura S. Evaluation of GaN substrates grown in supercritical basic ammonia Applied Physics Letters. 94. DOI: 10.1063/1.3079813  0.814
2009 Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona TM, Kamber DS, Wu Y, Letts E, Newman SA, Nakamura S, Speck JS, Mishra UK, Denbaars SP, Onuma T, et al. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105. DOI: 10.1063/1.3079333  0.801
2009 Pimputkar S, Speck JS, Denbaars SP, Nakamura S. Prospects for LED lighting Nature Photonics. 3: 180-182. DOI: 10.1038/Nphoton.2009.32  0.78
2009 Letts ER, Speck JS, Nakamura S. Effect of indium on the physical vapor transport growth of AlN Journal of Crystal Growth. 311: 1060-1064. DOI: 10.1016/J.Jcrysgro.2008.12.030  0.786
2009 Masui H, Cruz SC, Nakamura S, DenBaars SP. Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures Journal of Electronic Materials. 38: 756-760. DOI: 10.1007/S11664-009-0777-4  0.318
2009 Vampola KJ, Fellows NN, Masui H, Brinkley SE, Furukawa M, Chung RB, Sato H, Sonoda J, Hirasawa H, Iza M, Denbaars SP, Nakamura S. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 200-202. DOI: 10.1002/Pssa.200880411  0.78
2009 Masui H, Schmidt M, Fellows N, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Recent progress in nonpolar LEDs as polarized light emitters Physica Status Solidi (a) Applications and Materials Science. 206: 203-205. DOI: 10.1002/Pssa.200880407  0.426
2008 Sato H, Hirasawa H, Asamizu H, Fellows N, Tyagi A, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. High power and high efficiency semipolar InGaN light emitting diodes Journal of Light and Visual Environment. 32: 107-110. DOI: 10.2150/Jlve.32.107  0.659
2008 Masui H, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting Journal of the Society For Information Display. 16: 571. DOI: 10.1889/1.2905044  0.398
2008 Imer B, Haskell B, Rajan S, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555. DOI: 10.1557/Jmr.2008.0069  0.43
2008 Fellows N, Sato H, Masui H, DenBaars SP, Nakamura S. Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition Japanese Journal of Applied Physics. 47: 7854-7856. DOI: 10.1143/Jjap.47.7854  0.456
2008 Murai A, Thompson DB, Hirasawa H, Fellows N, Brinkley S, Won CJ, Iza M, Mishra UK, Nakamura S, Denbaars SP. Pointed cone shaped light-emitting diodes based on ZnO/GaN wafer bonding Japanese Journal of Applied Physics. 47: 3522-3523. DOI: 10.1143/Jjap.47.3522  0.438
2008 Thompson DB, Murai A, Iza M, Brinkley S, Steven DP, Mishra UK, Nakamura S. Hexagonal truncated pyramidal light emitting diodes through wafer bonding of znO to gan, laser lift-off, and photo chemical etching Japanese Journal of Applied Physics. 47: 3447-3449. DOI: 10.1143/Jjap.47.3447  0.456
2008 Masui H, Ive T, Schmidt MC, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes Japanese Journal of Applied Physics. 47: 2112-2118. DOI: 10.1143/Jjap.47.2112  0.399
2008 Saito M, Kamber DS, Baker TJ, Fujito K, DenBaars SP, Speck JS, Nakamura S. Plane dependent growth of GaN in supercritical basic ammonia Applied Physics Express. 1: 1211031-1211033. DOI: 10.1143/Apex.1.121103  0.798
2008 Tyagi A, Lin Y, Cohen DA, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures Applied Physics Express. 1: 91103. DOI: 10.1143/Apex.1.091103  0.741
2008 Asamizu H, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates Applied Physics Express. 1: 91102. DOI: 10.1143/Apex.1.091102  0.481
2008 Yamada H, Iso K, Saito M, Masui H, Fujito K, DenBaars SP, Nakamura S. Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes Applied Physics Express. 1: 041101. DOI: 10.1143/Apex.1.041101  0.486
2008 Masui H, Nakamura S, DenBaars SP. Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization Semiconductor Science and Technology. 23: 085018. DOI: 10.1088/0268-1242/23/8/085018  0.357
2008 Masui H, Fellows NN, Nakamura S, DenBaars SP. Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes Semiconductor Science and Technology. 23: 072001. DOI: 10.1088/0268-1242/23/7/072001  0.424
2008 Masui H, Kroemer H, Schmidt MC, Kim KC, Fellows NN, Nakamura S, DenBaars SP. Electroluminescence efficiency of (1 0 1̄ 0)-oriented InGaN-based light-emitting diodes at low temperature Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/082001  0.426
2008 Masui H, Yamada H, Iso K, Nakamura S, DenBaars SP. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure Journal of Physics D: Applied Physics. 41: 225104. DOI: 10.1088/0022-3727/41/22/225104  0.468
2008 Masui H, Sonoda J, Pfaff N, Koslow I, Nakamura S, Denbaars SP. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/16/165105  0.441
2008 Fellows NN, Sato H, Lin YD, Chung RB, Denbaars SP, Nakamura S. Dichromatic color tuning with InGaN-based light-emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2990761  0.784
2008 McGroddy K, David A, Matioli E, Iza M, Nakamura S, Denbaars S, Speck JS, Weisbuch C, Hu EL. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2978068  0.428
2008 Sato H, Chung RB, Hirasawa H, Fellows N, Masui H, Wu F, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2938062  0.788
2008 Kim KC, Schmidt MC, Wu F, McLaurin MB, Hirai A, Nakamura S, Denbaars SP, Speck JS. Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Applied Physics Letters. 93. DOI: 10.1063/1.2908978  0.39
2008 Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, ... ... Nakamura S, et al. Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] Journal of Applied Physics. 103: 89901. DOI: 10.1063/1.2903974  0.762
2008 David A, Moran B, McGroddy K, Matioli E, Hu EL, Denbaars SP, Nakamura S, Weisbuch C. GaNInGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth Applied Physics Letters. 92. DOI: 10.1063/1.2898513  0.472
2008 Masui H, Yamada H, Iso K, Nakamura S, DenBaars SP. Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes Applied Physics Letters. 92: 091105. DOI: 10.1063/1.2890050  0.434
2008 Law JJM, Yu ET, Haskell BA, Fini PT, Nakamura S, Speck JS, Denbaars SP. Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2828161  0.33
2008 Yamada H, Iso K, Masui H, Saito M, Fujito K, DenBaars SP, Nakamura S. Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 310: 4968-4971. DOI: 10.1016/J.Jcrysgro.2008.06.079  0.492
2008 Hashimoto T, Wu F, Speck JS, Nakamura S. Ammonothermal growth of bulk GaN Journal of Crystal Growth. 310: 3907-3910. DOI: 10.1016/J.Jcrysgro.2008.06.005  0.576
2008 Hashimoto T, Wu F, Saito M, Fujito K, Speck JS, Nakamura S. Status and perspectives of the ammonothermal growth of GaN substrates Journal of Crystal Growth. 310: 876-880. DOI: 10.1016/J.Jcrysgro.2007.11.088  0.587
2008 Fellows N, Masui H, Sato H, Asamizu H, Iza M, Zhong H, Nakamura S, DenBaars SP. Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry Physica Status Solidi (C). 5: 2216-2218. DOI: 10.1002/Pssc.200778572  0.451
2008 Hoshi T, Koyama T, Sugawara M, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2129-2132. DOI: 10.1002/Pssc.200778473  0.797
2008 Tyagi A, Zhong H, Chung RB, Feezell DF, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2108-2110. DOI: 10.1002/Pssc.200778460  0.817
2008 Barabash RI, Ice GE, Haskell BA, Nakamura S, Speck JS, Liu W. White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film Physica Status Solidi (B) Basic Research. 245: 899-902. DOI: 10.1002/Pssb.200778579  0.319
2008 Masui H, Yamada H, Iso K, Hirasawa H, Fellows NN, Speck JS, Nakamura S, DenBaars SP. Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope Physica Status Solidi (a) Applications and Materials Science. 205: 1203-1206. DOI: 10.1002/Pssa.200824044  0.448
2008 Imer B, Schmidt M, Haskell B, Rajan S, Zhong B, Kim K, Wu F, Mates T, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712. DOI: 10.1002/Pssa.200723403  0.502
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. A GaN bulk crystal with improved structural quality grown by the ammonothermal method. Nature Materials. 6: 568-71. PMID 17603489 DOI: 10.1038/Nmat1955  0.617
2007 Iso K, Yamada H, Hirasawa H, Fellows N, Saito M, Fujito K, DenBaars SP, Speck JS, Nakamura S. High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate Japanese Journal of Applied Physics, Part 2: Letters. 46: L960-L962. DOI: 10.1143/Jjap.46.L960  0.526
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. Growth of Bulk GaN Crystals by the Basic Ammonothermal Method Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L889  0.589
2007 Farrell RM, Feezell DF, Schmidt MC, Haeger DA, Kelchner KM, Iso K, Yamada H, Saito M, Fujito K, Cohen DA, Speck JS, Denbaars SP, Nakamura S. Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L761-L763. DOI: 10.1143/Jjap.46.L761  0.421
2007 Masui H, Sato H, Asamizu H, Schmidt MC, Fellows NN, Nakamura S, DenBaars SP. Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents Japanese Journal of Applied Physics, Part 2: Letters. 46: L627-L629. DOI: 10.1143/Jjap.46.L627  0.404
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L525  0.576
2007 Tyagi A, Zhong H, Chung RB, Feezell DF, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates Japanese Journal of Applied Physics, Part 2: Letters. 46: L444-L445. DOI: 10.1143/Jjap.46.L444  0.805
2007 Feezell DF, Schmidt MC, Farrell RM, Kim KC, Saito M, Fujito K, Cohen DA, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L284-L286. DOI: 10.1143/Jjap.46.L284  0.493
2007 Schmidt MC, Kim KC, Farrell RM, Feezell DF, Cohen DA, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L190-L191. DOI: 10.1143/Jjap.46.L190  0.453
2007 Tyagi A, Zhong H, Fellows NN, Iza M, Speck JS, DenBaars SP, Nakamura S. High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10\bar{1}\bar{1}) Bulk GaN Substrates Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L129  0.674
2007 Schmidt MC, Kim KC, Sato H, Fellows N, Masui H, Nakamura S, DenBaars SP, Speck JS. High power and high external efficiency m-plane InGaN light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L126-L128. DOI: 10.1143/Jjap.46.L126  0.498
2007 Yamada H, Iso K, Saito M, Fujito K, DenBaars SP, Speck JS, Nakamura S. Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L1117  0.446
2007 Masui H, Schmidt MC, Kim KC, Chakraborty A, Nakamura S, DenBaars SP. Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 7309-7310. DOI: 10.1143/Jjap.46.7309  0.379
2007 Fujii K, Iwaki Y, Masui H, Baker TJ, Iza M, Sato H, Kaeding J, Yao T, Speck JS, DenBaars SP, Nakamura S, Ohkawa K. Photoelectrochemical Properties of Nonpolar and Semipolar GaN Japanese Journal of Applied Physics. 46: 6573-6578. DOI: 10.1143/Jjap.46.6573  0.785
2007 Chakraborty A, Haskell BA, Wu F, Keller S, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 542-546. DOI: 10.1143/Jjap.46.542  0.428
2007 Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1524-1528. DOI: 10.1116/1.2746354  0.481
2007 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Philosophical Magazine. 87: 2019-2039. DOI: 10.1080/14786430701241689  0.407
2007 Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, ... ... Nakamura S, et al. Impact of strain on free-exciton resonance energies in wurtzite AlN Journal of Applied Physics. 102. DOI: 10.1063/1.2825577  0.785
2007 Kim KC, Schmidt MC, Sato H, Wu F, Fellows N, Jia Z, Saito M, Nakamura S, Denbaars SP, Speck JS, Fujito K. Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2805029  0.532
2007 Sharma R, Choi YS, Wang CF, David A, Weisbuch C, Nakamura S, Hu EL. Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors Applied Physics Letters. 91. DOI: 10.1063/1.2805028  0.617
2007 Waki I, Cohen D, Lal R, Mishra U, DenBaars SP, Nakamura S. Direct water photoelectrolysis with patterned n-GaN Applied Physics Letters. 91: 93519. DOI: 10.1063/1.2769393  0.336
2007 Zhong H, Tyagi A, Fellows NN, Wu F, Chung RB, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate Applied Physics Letters. 90. DOI: 10.1063/1.2746418  0.831
2007 Feezell DF, Farrell RM, Schmidt MC, Yamada H, Ishida M, Denbaars SP, Cohen DA, Nakamura S. Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers Applied Physics Letters. 90. DOI: 10.1063/1.2736478  0.397
2007 Kamber DS, Wu Y, Letts E, Denbaars SP, Speck JS, Nakamura S, Newman SA. Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2716068  0.79
2007 Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126  0.571
2007 Pattison PM, David A, Sharma R, Weisbuch C, DenBaars S, Nakamura S. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness Applied Physics Letters. 90. DOI: 10.1063/1.2430913  0.835
2007 Zhong H, Tyagi A, Fellows NN, Chung RB, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate Electronics Letters. 43: 825-827. DOI: 10.1049/El:20071323  0.832
2007 Tamboli AC, Haberer ED, Sharma R, Lee KH, Nakamura S, Hu EL. Room-temperature continuous-wave lasing in GaNInGaN microdisks Nature Photonics. 1: 61-64. DOI: 10.1038/Nphoton.2006.52  0.576
2007 Hashimoto T, Saito M, Fujito K, Wu F, Speck JS, Nakamura S. Seeded growth of GaN by the basic ammonothermal method Journal of Crystal Growth. 305: 311-316. DOI: 10.1016/J.Jcrysgro.2007.04.009  0.585
2007 Darakchieva V, Paskova T, Schubert M, Paskov PP, Arwin H, Monemar B, Hommel D, Heuken M, Off J, Haskell BA, Fini PT, Speck JS, Nakamura S. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers Journal of Crystal Growth. 300: 233-238. DOI: 10.1016/J.Jcrysgro.2006.11.023  0.343
2007 Sato H, Tyagi A, Zhong H, Fellows N, Chung RB, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. High power and high efficiency green light emitting diode on free-standing semipolar (112̄2) bulk GaN substrate Physica Status Solidi - Rapid Research Letters. 1: 162-164. DOI: 10.1002/Pssr.200701098  0.819
2007 Kim KC, Schmidt MC, Sato H, Wu F, Fellows N, Saito M, Fujito K, Speck JS, Nakamura S, DenBaars SP. Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs Physica Status Solidi - Rapid Research Letters. 1: 125-127. DOI: 10.1002/Pssr.200701061  0.482
2007 Murai A, Thompson DB, Masui H, Fellows N, Mishra UK, Nakamura S, DenBaars SP. Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding Physica Status Solidi (C). 4: 2756-2759. DOI: 10.1002/Pssc.200674710  0.441
2007 Haskell BA, Nakamura S, DenBaars SP, Speck JS. Progress in the growth of nonpolar gallium nitride Physica Status Solidi (B) Basic Research. 244: 2847-2858. DOI: 10.1002/Pssb.200675625  0.402
2007 Behn U, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS. Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy Physica Status Solidi (a) Applications and Materials Science. 204: 299-303. DOI: 10.1002/Pssa.200673539  0.362
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  0.417
2006 Diana FS, David A, Meinel I, Sharma R, Weisbuch C, Nakamura S, Petroff PM. Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure. Nano Letters. 6: 1116-20. PMID 16771564 DOI: 10.1021/Nl060535B  0.591
2006 Choi YS, Meier C, Sharma R, Hennessy K, Haberer ED, Nakamura S, Hu EL. Optical properties of GaN photonic crystal membrane nanocavities at blue wavelengths Materials Research Society Symposium Proceedings. 892: 491-496. DOI: 10.1557/Proc-0892-Ff20-06  0.582
2006 Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02  0.848
2006 Masui H, Nakamura S, DenBaars SP. Effects of Phosphor Application Geometry on White Light-Emitting Diodes Japanese Journal of Applied Physics. 45: L910-L912. DOI: 10.1143/Jjap.45.L910  0.409
2006 Masui H, Baker TJ, Sharma R, Pattison PM, Iza M, Zhong H, Nakamura S, DenBaars SP. First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L904  0.813
2006 Kaeding JF, Iza M, Sato H, DenBaars SP, Speck JS, Nakamura S. Effect of substrate miscut on the direct growth of semipolar (101̄1̄) GaN on (100) MgAl2O4 by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L536  0.799
2006 Murai A, Thompson DB, Chen CY, Mishra UK, Nakamura S, DenBaars SP. Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding Japanese Journal of Applied Physics. 45. DOI: 10.1143/Jjap.45.L1045  0.378
2006 Chakraborty A, Kim KC, Wu F, Haskell BA, Keller S, Speck JS, Nakamura S, Denbaars SP, Mishra UK. Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-plane GaN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 8659-8661. DOI: 10.1143/Jjap.45.8659  0.48
2006 Masui H, Schmidt MC, Chakraborty A, Nakamura S, DenBaars SP. Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 7661-7666. DOI: 10.1143/Jjap.45.7661  0.436
2006 Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 739-741. DOI: 10.1143/Jjap.45.739  0.467
2006 Piprek J, Farrell R, DenBaars S, Nakamura S. Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 18: 7-9. DOI: 10.1109/Lpt.2005.860045  0.467
2006 Roder C, Einfeldt S, Figge S, Paskova T, Hommel D, Paskov PP, Monemar B, Behn U, Haskell BA, Fini PT, Nakamura S. Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2386940  0.364
2006 Masui H, Baker TJ, Iza M, Zhong H, Nakamura S, DenBaars SP. Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN Journal of Applied Physics. 100: 113109. DOI: 10.1063/1.2382667  0.629
2006 Murai A, Thompson DB, Masui H, Fellows N, Mishra UK, Nakamura S, DenBaars SP. Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding Applied Physics Letters. 89: 171116. DOI: 10.1063/1.2364065  0.417
2006 Romanov AE, Baker TJ, Nakamura S, Speck JS. Strain-induced polarization in wurtzite III-nitride semipolar layers Journal of Applied Physics. 100. DOI: 10.1063/1.2218385  0.584
2006 Misra P, Behn U, Brandt O, Grahn HT, Imer B, Nakamura S, Denbaars SP, Speck JS. Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy Applied Physics Letters. 88. DOI: 10.1063/1.2198086  0.36
2006 David A, Fujii T, Moran B, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. Photonic crystal laser lift-off GaN light-emitting diodes Applied Physics Letters. 88: 133514. DOI: 10.1063/1.2189159  0.433
2006 David A, Fujii T, Sharma R, McGroddy K, Nakamura S, Denbaars SP, Hu EL, Weisbuch C, Benisty H. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Applied Physics Letters. 88. DOI: 10.1063/1.2171475  0.595
2006 David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. GaN light-emitting diodes with Archimedean lattice photonic crystals Applied Physics Letters. 88: 73510. DOI: 10.1063/1.2168673  0.562
2006 Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL. Visible resonant modes in GaN-based photonic crystal membrane cavities Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166680  0.581
2006 Paskov PP, Paskova T, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S. Optical properties of nonpolar a-plane GaN layers Superlattices and Microstructures. 40: 253-261. DOI: 10.1016/J.Spmi.2006.06.014  0.415
2006 Kamber DS, Wu Y, Haskell BA, Newman S, DenBaars SP, Speck JS, Nakamura S. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy Journal of Crystal Growth. 297: 321-325. DOI: 10.1016/J.Jcrysgro.2006.10.097  0.802
2006 Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S. Phase selection of microcrystalline GaN synthesized in supercritical ammonia Journal of Crystal Growth. 291: 100-106. DOI: 10.1016/J.Jcrysgro.2006.02.031  0.782
2006 Onuma T, Chakraborty A, Haskell BA, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF. Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2082-2086. DOI: 10.1002/Pssc.200565444  0.445
2006 Paskov PP, Schifano R, Malinauskas T, Paskova T, Bergman JP, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S. Photoluminescence of a-plane GaN: Comparison between MOCVD and HVPE grown layers Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1499-1502. DOI: 10.1002/Pssc.200565416  0.407
2006 Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS. Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire Physica Status Solidi (B) Basic Research. 243: 1441-1445. DOI: 10.1002/Pssb.200565297  0.374
2006 Roder C, Einfeldt S, Figge S, Hommel D, Paskova T, Monemar B, Haskell BA, Fini PT, Speck JS, Nakamura S. Strain in a-plane GaN layers grown on r-plane sapphire substrates Physica Status Solidi (a) Applications and Materials Science. 203: 1672-1675. DOI: 10.1002/Pssa.200565447  0.347
2006 Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S. Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm Physica Status Solidi (a) Applications and Materials Science. 203: 1783-1786. DOI: 10.1002/Pssa.200565408  0.833
2006 Koyama T, Sugawara M, Uchinuma Y, Kaeding JF, Sharma R, Onuma T, Nakamura S, Chichibu SF. Strain-relaxation in NH 3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates Physica Status Solidi (a) Applications and Materials Science. 203: 1603-1606. DOI: 10.1002/Pssa.200565289  0.815
2005 Hashimoto T, Fujito K, Wu F, Haskell BA, Fini PT, Speck JS, Nakamura S. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia Materials Research Society Symposium Proceedings. 831: 81-86. DOI: 10.1557/Proc-831-E2.8  0.588
2005 Chakraborty A, Baker TJ, Haskell BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates Japanese Journal of Applied Physics, Part 2: Letters. 44: L945-L947. DOI: 10.1143/Jjap.44.L945  0.66
2005 Baker TJ, Haskell BA, Wu F, Fini PT, Speck JS, Nakamura S. Characterization of planar semipolar gallium nitride films on spinel substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L920-L922. DOI: 10.1143/Jjap.44.L920  0.596
2005 Hashimoto T, Fujito K, Feng WU, Haskell BA, Fini PT, Speck JS, Nakamura S. Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia Japanese Journal of Applied Physics, Part 2: Letters. 44: L797-L799. DOI: 10.1143/Jjap.44.L797  0.597
2005 Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L173-L175. DOI: 10.1143/Jjap.44.L173  0.459
2005 Hashimoto T, Fujito K, Saito M, Speck JS, Nakamura S. Ammonothermal Growth of GaN on an over-1-inch Seed Crystal Japanese Journal of Applied Physics. 44. DOI: 10.1143/Jjap.44.L1570  0.616
2005 Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP. Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate Japanese Journal of Applied Physics, Part 2: Letters. 44: L1329-L1332. DOI: 10.1143/Jjap.44.L1329  0.467
2005 Hashimoto T, Fujito K, Samonji K, Speck JS, Nakamura S. Growth of AlN by the Chemical Vapor Reaction Process Japanese Journal of Applied Physics. 44: 869-873. DOI: 10.1143/Jjap.44.869  0.589
2005 Choi YS, Hennessy K, Sharma R, Haberer E, Gao Y, Denbaars SP, Nakamura S, Hu EL, Meier C. GaN blue photonic crystal membrane nanocavities Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2147713  0.559
2005 David A, Meier C, Sharma R, Diana FS, Denbaars SP, Hu E, Nakamura S, Weisbuch C, Benisty H. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction Applied Physics Letters. 87. DOI: 10.1063/1.2039987  0.589
2005 Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS. Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire Journal of Applied Physics. 98. DOI: 10.1063/1.1968424  0.359
2005 Chichibu SF, Uedono A, Onuma T, Sota T, Haskell BA, Denbaars SP, Speck JS, Nakamura S. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Applied Physics Letters. 86: 021914-1-021914-3. DOI: 10.1063/1.1851619  0.391
2005 Chakraborty A, Keller S, Meier C, Haskell BA, Waltereit P, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a -plane GaN Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1851007  0.472
2005 Hashimoto T, Fujito K, Haskell BA, Fini PT, Speck JS, Nakamura S. Growth of gallium nitride via fluid transport in supercritical ammonia Journal of Crystal Growth. 275: e525-e530. DOI: 10.1016/J.Jcrysgro.2004.11.024  0.59
2005 Haskell BA, Chakraborty A, Wu F, Sasano H, Fini PT, Denbaars SP, Speck JS, Nakamura S. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Journal of Electronic Materials. 34: 357-360. DOI: 10.1007/S11664-005-0110-9  0.396
2005 Haberer ED, Meier C, Sharma R, Stonas AR, DenBaars SP, Nakamura S, Hu EL. Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching Physica Status Solidi C: Conferences. 2: 2845-2848. DOI: 10.1002/Pssc.200461505  0.569
2005 Fujii T, David A, Gao Y, Iza M, DenBaars SP, Hu EL, Weisbuch C, Nakamura S. Cone-shaped surface GaN-based light-emitting diodes Physica Status Solidi C: Conferences. 2: 2836-2840. DOI: 10.1002/Pssc.200461494  0.392
2005 Chichibu SF, Koida T, Craven MD, Haskell BA, Onuma T, Sota T, Speck JS, DenBaars SP, Nakamura S. Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique Physica Status Solidi C: Conferences. 2: 2700-2703. DOI: 10.1002/Pssc.200461423  0.468
2005 Garrett GA, Shen H, Wraback M, Imer B, Haskell B, Speck JS, Keller S, Nakamura S, Denbaars SP. Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN Physica Status Solidi (a) Applications and Materials Science. 202: 846-849. DOI: 10.1002/Pssa.200461599  0.468
2004 Gao Y, Fujii T, Sharma R, Fujito K, Denbaars SP, Nakamura S, Hu EL. Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching Japanese Journal of Applied Physics. 43: 637. DOI: 10.1143/Jjap.43.L637  0.592
2004 Fujii T, David A, Schwach C, Pattison PM, Sharma R, Fujito K, Margalith T, Denbaars SP, Weisbuch C, Nakamura S. Micro cavity effect in GaN-based light-emitting diodes formed by laser lift-off and etch-back technique Japanese Journal of Applied Physics, Part 2: Letters. 43: L411-L413. DOI: 10.1143/Jjap.43.L411  0.823
2004 Koida T, Uchinuma Y, Kikuchi J, Wang KR, Terazaki M, Onuma T, Keading JF, Sharma R, Nakamura S, Chichibu SF. Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy Journal of Vacuum Science & Technology B. 22: 2158-2164. DOI: 10.1116/1.1775202  0.569
2004 McLaurin M, Haskell B, Nakamura S, Speck JS. Gallium adsorption onto (112̄0) gallium nitride surfaces Journal of Applied Physics. 96: 327-334. DOI: 10.1063/1.1759086  0.372
2004 Koida T, Chichibu SF, Sota T, Craven MD, Haskell BA, Speck JS, DenBaars SP, Nakamura S. Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth Applied Physics Letters. 84: 3768-3770. DOI: 10.1063/1.1738185  0.437
2004 Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SP, Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Applied Physics Letters. 84: 855-857. DOI: 10.1063/1.1645992  0.587
2004 Onuma T, Chlchibu SF, Uedono A, Sota T, Cantu P, Katona TM, Keading JF, Keller S, Mishra UK, Nakamura S, DenBaars SP. Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques Journal of Applied Physics. 95: 2495-2504. DOI: 10.1063/1.1644041  0.313
2004 Kaeding JF, Wu Y, Fujii T, Sharma R, Fini PT, Speck JS, Nakamura S. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Journal of Crystal Growth. 272: 257-263. DOI: 10.1016/J.Jcrysgro.2004.08.132  0.823
2004 Fujito K, Hashimoto T, Samonji K, Speck JS, Nakamura S. Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates Journal of Crystal Growth. 272: 370-376. DOI: 10.1016/J.Jcrysgro.2004.08.079  0.594
2004 Tavernier PR, Margalith T, Williams J, Green DS, Keller S, DenBaars SP, Mishra UK, Nakamura S, Clarke DR. The growth of N-face GaN by MOCVD: Effect of Mg, Si, and In Journal of Crystal Growth. 264: 150-158. DOI: 10.1016/J.Jcrysgro.2004.01.023  0.37
2003 Ikebe S, Harada T, Hashimoto T, Kanazawa I, Kuno S, Mizuno Y, Mizuta E, Murata M, Nagatsu T, Nakamura S, Takubo H, Yanagisawa N, Narabayashi H. Prevention and treatment of malignant syndrome in Parkinson's disease: a consensus statement of the malignant syndrome research group. Parkinsonism & Related Disorders. 9: S47-9. PMID 12735915 DOI: 10.1016/S1353-8020(02)00123-2  0.397
2003 Takubo H, Harada T, Hashimoto T, Inaba Y, Kanazawa I, Kuno S, Mizuno Y, Mizuta E, Murata M, Nagatsu T, Nakamura S, Yanagisawa N, Narabayashi H. A collaborative study on the malignant syndrome in Parkinson's disease and related disorders. Parkinsonism & Related Disorders. 9: S31-41. PMID 12735913 DOI: 10.1016/S1353-8020(02)00122-0  0.399
2003 Nakamura S, Yamada T, Hashimoto T, Takahashi S, Sogawa M, Ohara H, Nakazawa T, Sano H, Kuno A, Joh T, Nomura T, Arakawa T, Itoh M. Estradiol alleviates acinar cell apoptosis and chronic pancreatitis in male Wistar Bonn/Kobori rats. Pancreas. 26: e59-66. PMID 12657966 DOI: 10.1097/00006676-200304000-00024  0.399
2003 Hanlon A, Pattison PM, Kaeding JF, Sharma R, Fini P, Nakamura S. 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base Japanese Journal of Applied Physics, Part 2: Letters. 42: L628-L630. DOI: 10.1143/Jjap.42.L628  0.839
2003 Chichibu SF, Onuma T, Aoyama T, Nakajima K, Ahmet P, Chikyow T, Sota T, DenBaars SP, Nakamura S, Kitamura T, Ishida Y, Okumura H. Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate Journal of Vacuum Science & Technology B. 21: 1856-1862. DOI: 10.1116/1.1593645  0.401
2003 Haskell BA, Wu F, Craven MD, Matsuda S, Fini PT, Fujii T, Fujito K, DenBaars SP, Speck JS, Nakamura S. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy Applied Physics Letters. 83: 644-646. DOI: 10.1063/1.1866225  0.366
2003 Haskell BA, Wu F, Matsuda S, Craven MD, Fini PT, DenBaars SP, Speck JS, Nakamura S. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy Applied Physics Letters. 83: 1554-1556. DOI: 10.1063/1.1604174  0.306
2003 Yamamoto N, Itoh H, Grillo V, Chichibu SF, Keller S, Speck JS, DenBaars SP, Mishra UK, Nakamura S, Salviati G. Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope Journal of Applied Physics. 94: 4315-4319. DOI: 10.1063/1.1598632  0.303
2003 Chichibu SF, Onuma T, Sota T, DenBaars SP, Nakamura S, Kitamura T, Ishida Y, Okumura H. Influence of inn mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells Journal of Applied Physics. 93: 2051-2054. DOI: 10.1063/1.1535746  0.379
2003 Katona TM, Schmidt MC, Margalith T, Moe C, Tamura H, Sato H, Funaoka C, Underwood R, Nakamura S, Speck JS, DenBaars SP. 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction Physica Status Solidi C: Conferences. 2206-2209. DOI: 10.1002/Pssc.200303397  0.43
2002 Yamano S, Motomiya K, Akai Y, Shiiki H, Toyama T, Hashimoto T, Fujimoto S, Nakamura S, Fukuoka Y. Primary systemic amyloidosis presenting as angina pectoris due to intramyocardial coronary artery involvement: a case report. Heart and Vessels. 16: 157-60. PMID 12224787  0.406
2002 Yamaji K, Fujimoto S, Yutani C, Hashimoto T, Nakamura S. Is the site of thrombus formation in the left atrial appendage associated with the risk of cerebral embolism? Cardiology. 97: 104-10. PMID 11978958  0.415
2002 Nakamura S, Ohara H, Yamada T, Nakazawa T, Sano H, Ando H, Kajino S, Hashimoto T, Ando T, Nomura T, Joh T, Okayama Y, Uchida A, Iida M, Itoh M. Efficacy of plastic tube stents without side holes for middle and lower biliary strictures. Journal of Clinical Gastroenterology. 34: 77-80. PMID 11743251 DOI: 10.1097/00004836-200201000-00015  0.398
2002 Glaser E, Carlos W, Braga G, Freitas J, Moore W, Shanabrook B, Wickenden A, Koleske D, Henry R, Bayerl M, Brandt M, Obloh H, Kozodoy P, DenBaars S, Mishra U, ... Nakamura S, et al. Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) Materials Science and Engineering: B. 93: 39-48. DOI: 10.1016/S0921-5107(02)00007-7  0.417
2002 Yoshimoto M, Saraie J, Nakamura S. Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution Journal of Crystal Growth. 237: 1075-1078. DOI: 10.1016/S0022-0248(01)02139-X  0.365
2001 Kitajima Y, Ohiwa T, Yamada T, Sano H, Ohara H, Nakazawa T, Ando H, Hashimoto T, Nakamura S, Nomura T, Joh T, Yokoyama Y, Itoh M. Successful extracorporeal shock wave lithotripsy for sibling pancreatic duct stones. Pancreatology : Official Journal of the International Association of Pancreatology (Iap) ... [Et Al.]. 1: 69-73. PMID 12120271 DOI: 10.1159/000055795  0.404
2001 Yamaji K, Fujimoto S, Yutani C, Ikeda Y, Mizuno R, Hashimoto T, Nakamura S. Does the progression of myocardial fibrosis lead to atrial fibrillation in patients with hypertrophic cardiomyopathy? Cardiovascular Pathology : the Official Journal of the Society For Cardiovascular Pathology. 10: 297-303. PMID 11755375 DOI: 10.1016/S1054-8807(01)00086-2  0.405
2001 Yamada T, Hashimoto T, Sogawa M, Kobayashi S, Kaneda K, Nakamura S, Kuno A, Sano H, Ando T, Kobayashi S, Aoki S, Nakazawa T, Ohara H, Nomura T, Joh T, et al. Role of T cells in development of chronic pancreatitis in male Wistar Bonn/Kobori rats: effects of tacrolimus. American Journal of Physiology. Gastrointestinal and Liver Physiology. 281: G1397-404. PMID 11705744  0.407
2001 Mizuno R, Fujimoto S, Yamaji K, Yutani C, Hashimoto T, Nakamura S. Myocardial ultrasonic tissue characterization for estimating histological abnormalities in hypertrophic cardiomyopathy: comparison with endomyocardial biopsy findings. Cardiology. 96: 16-23. PMID 11701936  0.403
2001 Matoba-Ueno K, Fujimoto S, Doi N, Nishino T, Yamano S, Shiiki H, Hashimoto T, Nakamura S. [CHF arising after low dose THP-COP chemotherapy in an elderly patient with malignant lymphoma]. Nihon Ronen Igakkai Zasshi. Japanese Journal of Geriatrics. 38: 548-53. PMID 11523171  0.409
2001 Sugihara K, Fujimoto S, Motomiya Y, Hashimoto T, Nakamura S, Dohi K. Usefulness of long axis M-mode echocardiographic measurements for optimum dialysis in patients on maintenance hemodialysis: comparison with changes in plasma levels of atrial natriuretic peptide and brain natriuretic peptide. Clinical Nephrology. 56: 140-9. PMID 11522091  0.414
2001 Nakazawa T, Ohara H, Yamada T, Ando H, Sano H, Kajino S, Hashimoto T, Nakamura S, Ando T, Nomura T, Joh T, Itoh M. Atypical primary sclerosing cholangitis cases associated with unusual pancreatitis. Hepato-Gastroenterology. 48: 625-30. PMID 11462890  0.409
2001 Kawakami Y, Omae K, Narukawa Y, Nakamura S, Fujita S. Emission Mechanism in InGaN-Based Light Emitting Devices Journal of the Society of Materials Science, Japan. 50: 372-375. DOI: 10.2472/Jsms.50.372  0.429
2001 Zohta Y, Iwasaki Y, Nakamura S, Mukai T. Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium Japanese Journal of Applied Physics. 40: 423. DOI: 10.1143/Jjap.40.L423  0.372
2001 Yoshimoto M, Saraie J, Nakamura S. Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN Japanese Journal of Applied Physics. 40. DOI: 10.1143/Jjap.40.L386  0.397
2001 Chichibu SF, Sugiyama M, Kuroda T, Tackeuchi A, Kitamura T, Nakanishi H, Sota T, DenBaars SP, Nakamura S, Ishida Y, Okumura H. Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy Applied Physics Letters. 79: 3600-3602. DOI: 10.1063/1.1421082  0.361
2001 Uedono A, Chichibu SF, Chen ZQ, Sumiya M, Suzuki R, Ohdaira T, Mikado T, Mukai T, Nakamura S. Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams Journal of Applied Physics. 90: 181-186. DOI: 10.1063/1.1372163  0.429
2001 Kawakami Y, Narukawa Y, Omae K, Nakamura S, Fujita S. Pump and probe spectroscopy of InGaN multi quantum well based laser diodes Materials Science and Engineering B-Advanced Functional Solid-State Materials. 82: 188-193. DOI: 10.1016/S0921-5107(00)00749-2  0.421
2001 Torii K, Chichibu SF, Deguchi T, Nakanishi H, Sota T, Nakamura S. Excitonic polariton structures in Wurtzite GaN Physica B-Condensed Matter. 302: 268-276. DOI: 10.1016/S0921-4526(01)00440-9  0.346
2000 Mizuno R, Fujimoto S, Fujimoto T, Nishino T, Shiiki H, Hashimoto T, Nakamura S, Dohi K. Catastrophic antiphospholipid antibody syndrome in systemic lupus erythematosus: an autopsy case report of a young woman. Internal Medicine (Tokyo, Japan). 39: 856-9. PMID 11030215  0.404
2000 Nakamura S. Role of alloy fluctuations in InGaN-based LEDs and laser diodes Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1609  0.447
2000 Chichibu SF, Shikanai A, Deguchi T, Setoguchi A, Nakai R, Nakanishi H, Wada K, DenBaars SP, Sota T, Nakamura S. Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells Japanese Journal of Applied Physics. 39: 2417-2424. DOI: 10.1143/Jjap.39.2417  0.447
2000 Torii K, Koga T, Sota T, Azuhata T, Chichibu SF, Nakamura S. An attenuated-total-reflection study on the surface phonon-polariton in GaN Journal of Physics: Condensed Matter. 12: 7041-7044. DOI: 10.1088/0953-8984/12/31/305  0.355
2000 Sumiya M, Nakamura S, Chichibu SF, Mizuno K, Furusawa M, Yoshimoto M. Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy Applied Physics Letters. 77: 2512-2514. DOI: 10.1063/1.1318933  0.393
2000 Chichibu SF, Azuhata T, Sota T, Mukai T, Nakamura S. Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes Journal of Applied Physics. 88: 5153-5157. DOI: 10.1063/1.1314906  0.45
2000 Kawakami Y, Narukawa Y, Omae K, Fujita S, Nakamura S. Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes Applied Physics Letters. 77: 2151-2153. DOI: 10.1063/1.1314882  0.404
2000 Chichibu SF, Wada K, Müllhäuser J, Brandt O, Ploog KH, Mizutani T, Setoguchi A, Nakai R, Sugiyama M, Nakanishi H, Korii K, Deguchi T, Sota T, Nakamura S. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes Applied Physics Letters. 76: 1671-1673. DOI: 10.1063/1.126131  0.424
2000 Chichibu SF, Torii K, Deguchi T, Sota T, Setoguchi A, Nakanishi H, Azuhata T, Nakamura S. Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth Applied Physics Letters. 76: 1576-1578. DOI: 10.1063/1.126100  0.397
2000 Nakamura S, Senoh M, Nagahama S, Iwasa N, Matsushita T, Mukai T. Blue InGaN-based laser diodes with an emission wavelength of 450 nm Applied Physics Letters. 76: 22-24. DOI: 10.1063/1.125643  0.496
2000 Kudo H, Ishibashi H, Zheng R, Yamada Y, Taguchi T, Nakamura S, Shinomiya G. Ultraviolet emission properties in InxGa1−xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies Journal of Luminescence. 87: 1199-1201. DOI: 10.1016/S0022-2313(99)00596-7  0.356
2000 Izumi T, Narukawa Y, Okamoto K, Kawakami Y, Fujita S, Nakamura S. Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Journal of Luminescence. 87: 1196-1198. DOI: 10.1016/S0022-2313(99)00594-3  0.423
2000 Chichibu SF, Setoguchi A, Azuhata T, Müllhäuser J, Sugiyama M, Mizutani T, Deguchi T, Nakanishi H, Sota T, Brandt O, Ploog KH, Mukai T, Nakamura S. Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction Physica Status Solidi (a). 180: 321-325. DOI: 10.1002/1521-396X(200007)180:1<321::Aid-Pssa321>3.0.Co;2-E  0.321
2000 Kawakami Y, Narukawa Y, Omae K, Fujita S, Nakamura S. Dimensionality of Excitons in InGaN‐Based Light Emitting Devices Physica Status Solidi (a). 178: 331-336. DOI: 10.1002/1521-396X(200003)178:1<331::Aid-Pssa331>3.0.Co;2-9  0.446
1999 Nakamura S, Senoh M, Nagahama S, Matsushita T, Mukai T. High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode The Japan Society of Applied Physics. 1999: 224-225. DOI: 10.7567/Ssdm.1999.C-6-5  0.327
1999 Chichibu S, Deguchi T, Setoguchi A, Sugiyama M, Nakanishi H, Sota T, Mukai T, Nakamura S. Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells The Japan Society of Applied Physics. 1999: 198-199. DOI: 10.7567/Ssdm.1999.C-4-1  0.37
1999 Chichibu SF, Sota T, Wada K, DenBaars SP, Nakamura S. Spectroscopic studies in InGaN quantum wells Mrs Internet Journal of Nitride Semiconductor Research. 4: 93-105. DOI: 10.1557/S1092578300002295  0.368
1999 Nakamura S, Senoh M, Nagahama S, Iwasa N, Matushita T, Mukai T. InGaN/GaN/AlGaN-Based Leds and Laser Diodes Mrs Internet Journal of Nitride Semiconductor Research. 4: 1-17. DOI: 10.1557/S1092578300002192  0.493
1999 Nakamura S. InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN Journal of Materials Research. 14: 2716-2731. DOI: 10.1557/Jmr.1999.0365  0.467
1999 Deguchi T, Torii K, Shimada K, Sota T, Matsuo R, Sugiyama M, Setoguchi A, Chichibu S, Nakamura S. Optical properties of an InGaN active layer in ultraviolet light emitting diode Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L975  0.386
1999 Deguchi T, Sekiguchi K, Nakamura A, Sota T, Matsuo R, Chichibu S, Nakamura S. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L914  0.459
1999 Nakamura S, Senoh M, Nagahama S, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Mukai T. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L226  0.402
1999 Azuhata T, Shimada K, Deguchi T, Sota T, Suzuki K, Chichibu S, Nakamura S. Infrared Lattice Absorption in Wurtzite GaN Japanese Journal of Applied Physics. 38: 151-153. DOI: 10.1143/Jjap.38.L151  0.35
1999 Mukai T, Nakamura S. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates Japanese Journal of Applied Physics. 38: 5735-5739. DOI: 10.1143/Jjap.38.5735  0.488
1999 Mukai T, Yamada M, Nakamura S. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes Japanese Journal of Applied Physics. 38: 3976-3981. DOI: 10.1143/Jjap.38.3976  0.471
1999 Kobayashi M, Nakamura S, Kitamura K, Umeya H, Jia A, Yoshikawa A, Shimotomai M, Kato Y, Takahashi K. Luminescence properties of CdS quantum dots on ZnSe Journal of Vacuum Science & Technology B. 17: 2005-2008. DOI: 10.1116/1.590862  0.367
1999 Torii K, Deguchi T, Sota T, Suzuki K, Chichibu S, Nakamura S. Reflectance and emission spectra of excitonic polaritons in GaN Physical Review B. 60: 4723-4730. DOI: 10.1103/Physrevb.60.4723  0.345
1999 Narukawa Y, Kawakami Y, Fujita S, Nakamura S. Dimensionality of excitons in laser-diode structures composed of In x Ga 1-x N multiple quantum wells Physical Review B. 59: 10283-10288. DOI: 10.1103/Physrevb.59.10283  0.383
1999 Nakamura S. InGaN-based violet laser diodes Semiconductor Science and Technology. 14. DOI: 10.1088/0268-1242/14/6/201  0.489
1999 Deguchi T, Ichiryu D, Toshikawa K, Sekiguchi K, Sota T, Matsuo R, Azuhata T, Yamaguchi M, Yagi T, Chichibu S, Nakamura S. Structural and vibrational properties of GaN Journal of Applied Physics. 86: 1860-1866. DOI: 10.1063/1.370980  0.361
Show low-probability matches.