| Year |
Citation |
Score |
| 2024 |
Mahajan T, Minns A, Tokranov V, Yakimov M, Hedges M, Murat P, Oktyabrsky S. Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector. Sensors (Basel, Switzerland). 24. PMID 39598955 DOI: 10.3390/s24227178 |
0.562 |
|
| 2024 |
Minns A, Mahajan T, Tokranov V, Yakimov M, Hedges M, Murat P, Oktyabrsky S. Device response principles and the impact on energy resolution of epitaxial quantum dot scintillators with monolithic photodetector integration. Scientific Reports. 14: 22870. PMID 39354048 DOI: 10.1038/s41598-024-74160-7 |
0.537 |
|
| 2024 |
Biswal G, Yakimov M, Tokranov V, Sablon K, Tulyakov S, Mitin V, Oktyabrsky S. Bias-Tunable Quantum Well Infrared Photodetector. Nanomaterials (Basel, Switzerland). 14. PMID 38535696 DOI: 10.3390/nano14060548 |
0.51 |
|
| 2020 |
Sasaki S, Dropiewski K, Madisetti S, Tokranov V, Yakimov M, Oktyabrsky S. Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates Journal of Vacuum Science & Technology B. 38: 52204. DOI: 10.1116/6.0000169 |
0.637 |
|
| 2020 |
Dropiewski K, Minns A, Yakimov M, Tokranov V, Murat P, Oktyabrsky S. Ultrafast Waveguiding Quantum Dot Scintillation Detector Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 954: 161472. DOI: 10.1016/J.Nima.2018.10.150 |
0.608 |
|
| 2020 |
Dropiewski K, Minns A, Yakimov M, Tokranov V, Murat P, Oktyabrsky S. Optical Properties of InAs Quantum Dots/GaAs Waveguides for Ultra-fast Scintillators Journal of Luminescence. 220: 116952. DOI: 10.1016/J.Jlumin.2019.116952 |
0.624 |
|
| 2018 |
Papa Rao SS, Hobbs C, Olson S, Foroozani N, Chong H, Stamper H, Martinick B, Ashworth D, Bunday B, Malloy M, Holland E, Nalaskowski J, Kearney P, Ngai T, Wells I, ... ... Oktyabrsky S, et al. (Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers Ecs Transactions. 85: 151-161. DOI: 10.1149/08506.0151ECST |
0.493 |
|
| 2018 |
Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov P, Vlasov AS, Merz J, Rouvimov S, Oktyabrsky S, Yakimov M, Mukhin IV, Shelaev AV, Bykov VA, et al. Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy Semiconductors. 52: 497-501. DOI: 10.1134/S1063782618040206 |
0.621 |
|
| 2018 |
Mintairov AM, Kapaldo J, Merz JL, Rouvimov S, Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov PN, Vlasov AS, Zadiranov YM, Blundell SA, Mozharov AM, ... ... Oktyabrsky S, et al. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures Physical Review B. 97. DOI: 10.1103/Physrevb.97.195443 |
0.588 |
|
| 2017 |
Sablon K, Sergeev A, Zhang X, Mitin V, Yakimov M, Tokranov V, Oktyabrsky S. Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime Mrs Advances. 2: 759-766. DOI: 10.1557/Adv.2017.160 |
0.636 |
|
| 2017 |
Zhang X, Mitin V, Sergeev A, Sablon K, Varghese A, Yakimov M, Tokranov V, Oktyabrsky S. Effects of doping on photoelectron kinetics and characteristics of quantum dot infrared photodetector Proceedings of Spie. 10177: 1017729. DOI: 10.1117/12.2262362 |
0.628 |
|
| 2017 |
Dropiewski K, Tokranov V, Yakimov M, Oktyabrsky S, Bentley S, Galatage R. MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B115. DOI: 10.1116/1.4978782 |
0.596 |
|
| 2017 |
Sasaki S, Dropiewski K, Madisetti S, Tokranov V, Yakimov M, Oktyabrsky S, Bentley S, Galatage R, Jacob AP. Electrical properties related to growth defects in metamorphic GaSb films on Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11203. DOI: 10.1116/1.4973215 |
0.625 |
|
| 2017 |
Zhang X, Mitin V, Sergeev A, Sablon K, Yakimov M, Oktyabrsky S, Choi JK, Strasser G. Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion Journal of Physics: Conference Series. 906: 012026. DOI: 10.1088/1742-6596/906/1/012026 |
0.53 |
|
| 2016 |
Varghese A, Yakimov M, Tokranov V, Mitin V, Sablon K, Sergeev A, Oktyabrsky S. Complete voltage recovery in quantum dot solar cells due to suppression of electron capture. Nanoscale. 8: 7248-56. PMID 26974517 DOI: 10.1039/C5Nr07774E |
0.628 |
|
| 2016 |
Oktyabrsky S, Yakimov M, Tokranov V, Murat P. Integrated Semiconductor Quantum Dot Scintillation Detector: Ultimate Limit for Speed and Light Yield Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2502426 |
0.624 |
|
| 2016 |
Chidambaram T, Veksler D, Madisetti S, Yakimov M, Tokranov V, Oktyabrsky S. InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements Ieee Electron Device Letters. 37: 1547-1550. DOI: 10.1109/Led.2016.2617119 |
0.652 |
|
| 2016 |
Kapaldo J, Rouvimov S, Merz JL, Oktyabrsky S, Blundell SA, Bert N, Brunkov P, Kalyuzhnyy NA, Mintairov SA, Nekrasov S, Saly R, Vlasov AS, Mintairov AM. Ga-In intermixing, intrinsic doping, and Wigner localization in the emission spectra of self-organized InP/GaInP quantum dots Journal of Physics D. 49: 475301. DOI: 10.1088/0022-3727/49/47/475301 |
0.347 |
|
| 2016 |
Orzali T, Vert A, O'Brian B, Herman JL, Vivekanand S, Papa Rao SS, Oktyabrsky SR. Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping Journal of Applied Physics. 120. DOI: 10.1063/1.4961522 |
0.307 |
|
| 2016 |
Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460 |
0.405 |
|
| 2016 |
Sardashti K, Hu KT, Tang K, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces Applied Surface Science. 366: 455-463. DOI: 10.1016/J.Apsusc.2016.01.123 |
0.35 |
|
| 2015 |
Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces. Acs Applied Materials & Interfaces. 7: 26275-83. PMID 26575590 DOI: 10.1021/Acsami.5B08727 |
0.335 |
|
| 2015 |
Sasaki S, Madisetti S, Tokranov V, Yakimov M, Hirayama M, Bentley S, Galatage R, Jacob AP, Oktyabrsky S. Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects Mrs Proceedings. 1790: 13-18. DOI: 10.1557/Opl.2015.515 |
0.414 |
|
| 2015 |
Yakimov M, Oktyabrsky S, Murat P. Picosecond UV single photon detectors with lateral drift field: Concept and technologies Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 795: 100-108. DOI: 10.1016/J.Nima.2015.05.037 |
0.592 |
|
| 2014 |
Kerr AJ, Chagarov E, Gu S, Kaufman-Osborn T, Madisetti S, Wu J, Asbeck PM, Oktyabrsky S, Kummel AC. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. The Journal of Chemical Physics. 141: 104702. PMID 25217942 DOI: 10.1063/1.4894541 |
0.405 |
|
| 2014 |
Madisetti SK, Tokranov V, Greene A, Novak S, Yakimov M, Oktyabrsky S, Bentley S, Jacob AP. GaSb on Si: Structural defects and their effect on surface morphology and electrical properties Prehospital and Disaster Medicine. 1635. DOI: 10.1557/Opl.2014.219 |
0.648 |
|
| 2014 |
Madisetti SK, Tokranov V, Greene A, Yakimov M, Sasaki S, Hirayama M, Novak S, Bentley S, Jacob AP, Oktyabrsky S. P-type III-Sb MOSFET on a metamorphic substrate: Towards all III-V CMOS Ecs Transactions. 61: 163-171. DOI: 10.1149/06103.0163ecst |
0.605 |
|
| 2014 |
Greene A, Madisetti S, Yakimov M, Tokranov V, Oktyabrsky S. Development of III-Sb technology for p-channel MOSFETs International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500153 |
0.659 |
|
| 2014 |
Madisetti S, Tokranov V, Greene A, Yakimov M, Hirayama M, Oktyabrsky S, Bentley S, Jacob AP. Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4892797 |
0.66 |
|
| 2014 |
Bouzi PM, Chiu Y, Deutsch C, Dikmelik Y, Song Y, Tokranov V, Oktyabrsky S, Gmachl C. Importance of growth direction in mid-infrared quantum cascade lasers Journal of Applied Physics. 116. DOI: 10.1063/1.4890311 |
0.366 |
|
| 2014 |
Chidambaram T, Veksler D, Madisetti S, Greene A, Yakimov M, Tokranov V, Hill R, Oktyabrsky S. Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method Applied Physics Letters. 104. DOI: 10.1063/1.4870257 |
0.671 |
|
| 2014 |
Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM. Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Applied Surface Science. 317: 1022-1027. DOI: 10.1016/J.Apsusc.2014.09.028 |
0.373 |
|
| 2013 |
Greene A, Madisetti S, Nagaiah P, Tokranov V, Yakimov M, Moore R, Oktyabrsky S. InGaSb MOSFET channel on metamorphic buffer: Materials, interfaces and process options Ecs Transactions. 53: 149-160. DOI: 10.1149/05301.0149ecst |
0.786 |
|
| 2013 |
Huang X, Zhang J, Chiu Y, Charles W, Gmachl C, Tokranov V, Oktyabrsky S. Long-wavelength and cascaded-transition quantum lasers Spie Newsroom. DOI: 10.1117/2.1201303.004784 |
0.322 |
|
| 2013 |
Yakimov M, Sergeev A, Pogrebnyak V, Varghese A, Tokranov V, Thomain G, Vagidov N, Mitin V, Oktyabrsky S. Engineering of absorbing medium for quantum dot infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2024458 |
0.615 |
|
| 2013 |
Mitin V, Choi JK, Thomain G, Sablon K, Oktyabrsky S, Vagidov N, Sergeev A. Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing Proceedings of Spie - the International Society For Optical Engineering. 8725. DOI: 10.1117/12.2015830 |
0.381 |
|
| 2013 |
Huang X, Chiu Y, Zhang JL, Charles WO, Tokranov VE, Oktyabrsky S, Gmachl CF. Long-wavelength (λ ≈ 12- 16 μm) and cascaded transition quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 8640. DOI: 10.1117/12.2002246 |
0.379 |
|
| 2013 |
Zhernokletov DM, Dong H, Brennan B, Kim J, Wallace RM, Yakimov M, Tokranov V, Oktyabrsky S. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4817496 |
0.598 |
|
| 2013 |
Chidambaram T, Madisetti S, Greene A, Yakimov M, Tokranov V, Veksler D, Hill R, Oktyabrsky S. Quantification of interface trap density above threshold voltage by gated hall method in InGaAs buried quantum well MOSFET Device Research Conference - Conference Digest, Drc. 127-128. DOI: 10.1109/DRC.2013.6633826 |
0.594 |
|
| 2013 |
Huang X, Zhang JL, Tokranov V, Oktyabrsky S, Gmachl CF. Same-wavelength cascaded-transition quantum cascade laser Applied Physics Letters. 103. DOI: 10.1063/1.4817737 |
0.357 |
|
| 2013 |
Zhernokletov DM, Laukkanen P, Dong H, Galatage RV, Brennan B, Yakimov M, Tokranov V, Kim J, Oktyabrsky S, Wallace RM. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface Applied Physics Letters. 102. DOI: 10.1063/1.4807766 |
0.586 |
|
| 2013 |
Zhernokletov DM, Dong H, Brennan B, Yakimov M, Tokranov V, Oktyabrsky S, Kim J, Wallace RM. Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces Applied Physics Letters. 102. DOI: 10.1063/1.4800441 |
0.583 |
|
| 2013 |
Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S. All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides Journal of Crystal Growth. 378: 631-635. DOI: 10.1016/J.Jcrysgro.2012.12.105 |
0.817 |
|
| 2013 |
Kumar Madisetti S, Chidambaram T, Nagaiah P, Tokranov V, Yakimov M, Oktyabrsky S. Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide Physica Status Solidi - Rapid Research Letters. 7: 550-553. DOI: 10.1002/Pssr.201307243 |
0.825 |
|
| 2012 |
Oktyabrsky S, Tokranov V, Yakimov M, Sergeev A, Mitin V. Nanoengineered quantum dot medium for space optoelectronic devices Proceedings of Spie - the International Society For Optical Engineering. 8519. DOI: 10.1117/12.967124 |
0.629 |
|
| 2012 |
Kim TW, Kim DH, Koh DH, Hill RJW, Lee RTP, Wong MH, Cunningham T, Del Alamo JA, Banerjee SK, Oktyabrsky S, Greene A, Ohsawa Y, Trickett Y, Nakamura G, Li Q, et al. ETB-QW InAs MOSFET with scaled body for improved electrostatics Technical Digest - International Electron Devices Meeting, Iedm. 32.3.1-32.3.4. DOI: 10.1109/IEDM.2012.6479151 |
0.329 |
|
| 2012 |
Madisetti S, Nagaiah P, Chidambaram T, Tokranov V, Yakimov M, Oktyabrsky S. Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide Device Research Conference - Conference Digest, Drc. 103-104. DOI: 10.1109/DRC.2012.6256973 |
0.819 |
|
| 2012 |
Veksler D, Nagaiah P, Chidambaram T, Cammarere R, Tokranov V, Yakimov M, Chen YT, Huang J, Goel N, Oh J, Bersuker G, Hobbs C, Kirsch PD, Oktyabrsky S. Quantification of interfacial state density (D it) at the high-k/III-V interface based on Hall effect measurements Journal of Applied Physics. 112. DOI: 10.1063/1.4749403 |
0.818 |
|
| 2012 |
Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S. Improvement of the GaSb/Al 2O 3 interface using a thin InAs surface layer Solid-State Electronics. 78: 56-61. DOI: 10.1016/J.Sse.2012.05.049 |
0.823 |
|
| 2011 |
Nagaiah P, Tokranov V, Yakimov M, Madisetti S, Greene A, Novak S, Moore R, Bakhru H, Oktyabrsky S. In-situ deposited HfO 2with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs Ecs Transactions. 41: 223-230. DOI: 10.1149/1.3633038 |
0.836 |
|
| 2011 |
Rumyantsev S, Stillman W, Shur M, Heeg T, Schlom DG, Koveshnikov S, Kambhampati R, Tokranov V, Oktyabrsky S. Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric International Journal of High Speed Electronics and Systems. 20: 105-113. DOI: 10.1142/S0129156411006441 |
0.801 |
|
| 2011 |
Oktyabrsky S, Nagaiah P, Tokranov V, Yakimov M, Kambhampati R, Koveshnikov S, Veksler D, Goel N, Bersuker G. Electron scattering in buried InGaAs/high-K MOS channels International Journal of High Speed Electronics and Systems. 20: 95-103. DOI: 10.1142/S012915641100643X |
0.811 |
|
| 2011 |
Huang J, Goel N, Lysaght P, Veksler D, Nagaiah P, Oktyabrsky S, Price J, Zhao H, Chen YT, Lee JC, Woicik JC, Majhi P, Kirsch PD, Jammy R. Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 28-29. DOI: 10.1109/VTSA.2011.5872218 |
0.758 |
|
| 2011 |
Fahrenkopf NM, Nagaiah P, Tokranova N, Oktyabrsky S, Tokranov V, Bergkvist M, Cady NC. A III-V field effect transistor (FET) with hafnium oxide gate dielectric for the detection of deoxyribonucleic acid (DNA) hybridization 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135239 |
0.714 |
|
| 2011 |
Greene A, Yakimov M, Nagaiah P, Madisetti S, Tokranov V, Moore R, Oktyabrsky S. Improvement of the GaSb/Al 2O 3 interface using a thin InAs surface layer 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135217 |
0.791 |
|
| 2011 |
Tokranov V, Nagaiah P, Yakimov M, Matyi RJ, Oktyabrsky S. AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate Journal of Crystal Growth. 323: 35-38. DOI: 10.1016/J.Jcrysgro.2010.12.077 |
0.815 |
|
| 2010 |
Chien LH, Sergeev A, Mitin V, Vagidov N, Oktyabrsky S. Nanostructures with quantum dot clusters: Long photocarrier lifetime Nanoscience and Nanotechnology Letters. 2: 129-132. DOI: 10.1166/Nnl.2010.1069 |
0.403 |
|
| 2010 |
Chien LH, Sergeev A, Mitin V, Oktyabrsky S. Quantum dot photodetectors based on structures with collective potential barriers Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.842239 |
0.309 |
|
| 2010 |
Yakimov M, Van Eisden J, Tokranov V, Varanasi M, Oktyabrsky SR, Mohammed EM, Young IA. Concept of feedback-free high-frequency loss modulation in detuned duo-cavity vertical cavity surface-emitting laser Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3399025 |
0.502 |
|
| 2010 |
Nagaiah P, Tokranov V, Yakimov M, Koveshnikov S, Oktyabrsky S, Veksler D, Tsai W, Bersuker G. Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3360903 |
0.832 |
|
| 2010 |
Ali A, Madan H, Koveshnikov S, Oktyabrsky S, Kambhampati R, Heeg T, Schlom D, Datta S. Small-signal response of inversion layers in high-mobility In 0.53Ga0.47As MOSFETs made with thin high-κ dielectrics Ieee Transactions On Electron Devices. 57: 742-748. DOI: 10.1109/Ted.2010.2041855 |
0.819 |
|
| 2010 |
Oktyabrsky S, Kambhampati R, Tokranov V, Yakimov M, Heeg T, Warusawithana M, Schlom D, Koveshnikov S. Microstructure and Electrical Properties of III-As Gate Stacks with Amorphous Rare-Earth High-k Oxides Microscopy and Microanalysis. 16: 1412-1413. DOI: 10.1017/S1431927610056990 |
0.6 |
|
| 2010 |
Oktyabrsky S, Nishi Y, Koveshnikov S, Wang WE, Goel N, Tsai W. Materials and technologies for III-V MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 195-250. DOI: 10.1007/978-1-4419-1547-4_8 |
0.362 |
|
| 2010 |
Oktyabrsky S, Ye PD. Fundamentals of III-V semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 1-445. DOI: 10.1007/978-1-4419-1547-4 |
0.336 |
|
| 2010 |
Goldberg D, Deych L, Lisyansky A, Shi Z, Tokranov V, Yakimov M, Oktyabrsky S, Menon VM. Bloch-Polaritons in multiple-quantum-well photonic crystal structures Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010. |
0.525 |
|
| 2009 |
Fahrenkopf NM, Oktyabrsky S, Eisenbraun E, Bergkvist M, Shi H, Cady NC. Phosphate-Dependent DNA immobilization on hafnium oxide for bio-sensing applications Materials Research Society Symposium Proceedings. 1191: 141-146. DOI: 10.1557/Proc-1191-Oo12-04 |
0.351 |
|
| 2009 |
Oktyabrsky S, Nagaiah P, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Moore R, Tsai W. Electron Scattering in Buried InGaAs MOSFET Channel with HfO 2 Gate Oxide Mrs Proceedings. 1155. DOI: 10.1557/Proc-1155-C02-03 |
0.685 |
|
| 2009 |
Tokranov V, Yakimov M, Oktyabrsky S. QD VCSELs with InAs/InGaAs short period superlattice QW injector Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.809570 |
0.523 |
|
| 2009 |
Yakimov M, Tokranov V, Sergeev A, Oktyabrsky S. VCSEL with intracavity modulator: Fast modulation options Proceedings of Spie - the International Society For Optical Engineering. 7229. DOI: 10.1117/12.809568 |
0.481 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284 |
0.371 |
|
| 2009 |
Ali A, Mookerjea S, Hwang E, Koveshnikov S, Oktyabrsky S, Tokranov V, Yakimov M, Kambhampati R, Tsai W, Datta S. HfO2 gated, self aligned and directly contacted indium arsenide quantum-well transistors for logic applications- A temperature and bias dependent study Device Research Conference - Conference Digest, Drc. 55-56. DOI: 10.1109/DRC.2009.5354916 |
0.639 |
|
| 2009 |
Oktyabrsky S, Nagaiah P, Tokranov V, Kambhampati R, Yakimov M, Tsai W, Koveshnikov S. Investigation of scattering mechanisms in HfO 2 gated Hall structures with In 0.77Ga 0.23As quantum well channel Device Research Conference - Conference Digest, Drc. 119-120. DOI: 10.1109/DRC.2009.5354868 |
0.821 |
|
| 2009 |
Goldberg D, Deych LI, Lisyansky AA, Shi Z, Menon VM, Tokranov V, Yakimov M, Oktyabrsky S. Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals Nature Photonics. 3: 662-666. DOI: 10.1038/Nphoton.2009.190 |
0.571 |
|
| 2009 |
Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W. Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Journal of Crystal Growth. 311: 1950-1953. DOI: 10.1016/J.Jcrysgro.2008.11.037 |
0.822 |
|
| 2009 |
Goldberg D, Deych L, Lisyansky A, Tokranov V, Yakimov M, Oktyabrsky S, Menon VM. Tuning of coherent interaction in a resonant photonic crystal using an external electric field 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009. |
0.507 |
|
| 2009 |
Oktyabrsky S, Nagaiah P, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Moore R, Tsai W. Electron scattering in buried InGaAs MOSFET channel with HfO2 gate oxide Materials Research Society Symposium Proceedings. 1155: 125-130. |
0.834 |
|
| 2008 |
Nagaiah P, Tokranov V, Yakimov M, Oktyabrsky S. Strained Quantum Wells for P-channel InGaAs CMOS Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A12-01 |
0.798 |
|
| 2008 |
Goldberg D, Deych LI, Menon V, Lisyansky A, Tokranov V, Yakimov M, Oktyabrsky S. Exciton-Polaritons in Double-Quantum-Well Based Resonant Photonic Crystals Frontiers in Optics. DOI: 10.1364/Fio.2008.Fwl2 |
0.34 |
|
| 2008 |
Oktyabrsky S, Yakimov M, Tokranov V, Kambhampati R, Bakhru H, Koveshnikov S, Tsai W, Zhu F, Lee J. Challanges and progrss in III-V MOSFETs for CMOS circuits International Journal of High Speed Electronics and Systems. 18: 761-772. DOI: 10.1142/S0129156408005746 |
0.831 |
|
| 2008 |
Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Modulation and thermal properties of tunnel-coupled InAs QD 1.13μm VCSELs Proceedings of Spie - the International Society For Optical Engineering. 6902. DOI: 10.1117/12.764057 |
0.516 |
|
| 2008 |
Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Rumyantsev O, Mohammed EM, Young IA, Oktyabrsky SR. High frequency resonance-free loss modulation in a duo-cavity VCSEL Proceedings of Spie - the International Society For Optical Engineering. 6908. DOI: 10.1117/12.763859 |
0.495 |
|
| 2008 |
Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Mohammed EM, Young IA, Oktyabrsky SR. Optically decoupled loss modulation in a Duo-Cavity VCSEL Ieee Photonics Technology Letters. 20: 42-44. DOI: 10.1109/Lpt.2007.912693 |
0.486 |
|
| 2008 |
Goel N, Heh D, Koveshnikov S, Ok I, Oktyabrsky S, Tokranov V, Kambhampati R, Yakimov M, Sun Y, Pianetta P, Gaspe CK, Santos MB, Lee J, Datta S, Majhi P, et al. Addressing the gate stack challenge for high mobility in xGa 1-xas channels for NFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796695 |
0.552 |
|
| 2008 |
Mintairov AM, Chu Y, He Y, Blokhin S, Nadtochy A, Maximov M, Tokranov V, Oktyabrsky S, Merz JL. High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.195322 |
0.337 |
|
| 2008 |
Koveshnikov S, Adamo C, Tokranov V, Yakimov M, Kambhampati R, Warusawithana M, Schlom DG, Tsai W, Oktyabrsky S. Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide Applied Physics Letters. 93. DOI: 10.1063/1.2952830 |
0.66 |
|
| 2008 |
Koveshnikov S, Goel N, Majhi P, Wen H, Santos MB, Oktyabrsky S, Tokranov V, Kambhampati R, Moore R, Zhu F, Lee J, Tsai W. In0.53Ga0.47 As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm Applied Physics Letters. 92. DOI: 10.1063/1.2931031 |
0.445 |
|
| 2008 |
Goldberg D, Deych L, Menon VM, Lisyansky A, Tokranov V, Yakimov M, Oktyabrsky S. Exciton-polaritons in double-quantum-well based resonant photonic crystals Optics Infobase Conference Papers. |
0.527 |
|
| 2008 |
Van Eisden J, Yakimov M, Tokranov V, Mohammed EM, Young IA, Oktyabrsky SR. Monolithic integration of an electroabsorption modulator into a GaAs-based duocavity VCSEL for resonance-free modulation 2008 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2008. |
0.495 |
|
| 2007 |
Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Tunnel QW-QDs InGaAs-InAs high gain medium for all-epitaxial VCSELs Materials Research Society Symposium Proceedings. 959: 118-123. DOI: 10.1557/Proc-0959-M19-04 |
0.625 |
|
| 2007 |
Kambhampati R, Koveshmkov S, Tokranov V, Yakimov M, Moore R, Tsai W, Oktyabrsky S. In-situ deposition of high-k gate stack on InGaAs and GaAs for metal-oxide-semiconductor devices with low equivalent oxide thickness Ecs Transactions. 11: 431-439. DOI: 10.1149/1.2779579 |
0.645 |
|
| 2007 |
Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. All-epitaxial VCSELs with tunnel QW-QD InGaAs-InAs gain medium Proceedings of Spie - the International Society For Optical Engineering. 6481. DOI: 10.1117/12.701639 |
0.598 |
|
| 2007 |
Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Mohammed EM, Young IA, Oktyabrsky S. Modulation properties of VCSEL with intracavity modulator Proceedings of Spie - the International Society For Optical Engineering. 6484. DOI: 10.1117/12.701516 |
0.509 |
|
| 2007 |
Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC. Metal gate Hf O2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1491-1494. DOI: 10.1116/1.2746348 |
0.633 |
|
| 2007 |
Oktyabrsky S, Koveshnikov S, Tokranov V, Yakimov M, Kambhampati R, Bakhru H, Zhu F, Lee J, Tsai W. InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO 2 gate oxide and a-Si interface passivation layer 65th Drc Device Research Conference. 203-204. DOI: 10.1109/DRC.2007.4373718 |
0.615 |
|
| 2007 |
Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Oktyabrsky S, Mohammed EM, Young IA. Optical decoupling in a loss-modulated dual-cavity VCSEL Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453111 |
0.458 |
|
| 2007 |
Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. All-epitaxial VCSELs with tunnel-coupled QDs-QW InAs-InGaAs active medium Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452595 |
0.563 |
|
| 2007 |
Zhu F, Koveshnikov S, Ok I, Kim HS, Zhang M, Lee T, Thareja G, Yu L, Lee JC, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide Applied Physics Letters. 91: 43507. DOI: 10.1063/1.2762295 |
0.663 |
|
| 2007 |
Zhang MH, Oye M, Cobb B, Zhu F, Kim HS, Ok IJ, Hurst J, Lewis S, Holmes A, Lee JC, Koveshnikov S, Tsai W, Yakimov M, Torkanov V, Oktyabrsky S. Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks Journal of Applied Physics. 101: 34103. DOI: 10.1063/1.2432479 |
0.626 |
|
| 2007 |
Tokranov V, Rumyantsev SL, Shur MS, Gaska R, Oktyabrsky S, Jain R, Pala N. HfO2/AIGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Physica Status Solidi - Rapid Research Letters. 1: 199-201. DOI: 10.1002/Pssr.200701136 |
0.382 |
|
| 2007 |
Kim HS, Ok I, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC. HfO2based metal-oxide-semiconductor capacitors on n-InGaAs substrate with a thin germanium passivation layer 2007 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2007. 69-71. |
0.317 |
|
| 2007 |
Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC. Hydrogen incorporation of metal gate HfO2 MOS structures on In0.2Ga0.8As substrate with Si interface passivation layer 2007 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2007. 293-296. |
0.333 |
|
| 2006 |
Yakimov M, Tokranov V, Kambhampati R, Koveshnikov S, Tsai W, Zhu F, Lee J, Oktyabrsky S. Enhancement Mode GaAs n-MOSFET with High-k Dielectric The Japan Society of Applied Physics. 2006: 946-947. DOI: 10.7567/Ssdm.2006.E-8-1 |
0.777 |
|
| 2006 |
Oktyabrsky S, Yakimov M, Eisden JV, Tokranov V. Self-Assembled Quantum Dots: Engineered Gain Medium The Japan Society of Applied Physics. 2006: 264-265. DOI: 10.7567/Ssdm.2006.B-5-1 |
0.317 |
|
| 2006 |
Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 6129. DOI: 10.1117/12.646844 |
0.595 |
|
| 2006 |
Ok I, Kim H, Zhang M, Lee T, Zhu F, Yu L, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC. Self-aligned n- and p-channel GaAs MOSFETs on undoped and P-type substrates using HfO2 and silicon interface passivation layer Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346742 |
0.372 |
|
| 2006 |
Van Eisden J, Yakimov M, Tokranov V, Oktyabrsky S, Mohammed EM, Young IA. High frequency Q-switched operation of a VCSEL with intracavity electroabsorption modulator Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628366 |
0.476 |
|
| 2006 |
Kim HS, Ok I, Zhang M, Lee T, Zhu F, Yu L, Lee JC, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO 2 dielectric and germanium interfacial passivation layer Applied Physics Letters. 89. DOI: 10.1063/1.2396914 |
0.674 |
|
| 2006 |
Zhu J, Oktyabrsky S, Huang MB. Ion channeling investigation of proton-irradiation-induced In-Ga atomic intermixing in self-assembled InAs/GaAs quantum dot structures Journal of Applied Physics. 100. DOI: 10.1063/1.2388139 |
0.42 |
|
| 2006 |
Koveshnikov S, Tsai W, Ok I, Lee JC, Torkanov V, Yakimov M, Oktyabrsky S. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2164327 |
0.654 |
|
| 2006 |
Oktyabrsky S, Tokranov V, Yakimov M, Moore R, Koveshnikov S, Tsai W, Zhu F, Lee JC. High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 272-276. DOI: 10.1016/J.Mseb.2006.08.018 |
0.682 |
|
| 2006 |
Oktyabrsky S, Tokranov V, Agnello G, Van Eisden J, Yakimov M. Nano-engineering approaches to self-assembled InAs quantum dot laser medium Journal of Electronic Materials. 35: 822-833. DOI: 10.1007/Bf02692535 |
0.628 |
|
| 2005 |
Agnello G, Tokranov V, Yakimov M, Lamberti M, Zheng Y, Oktyabrsky S. Structural and optical effects of capping layer material and growth rate on the properties of self-assembled InAs quantum dot structures Materials Research Society Symposium Proceedings. 829: 63-68. DOI: 10.1557/Proc-829-B2.1 |
0.63 |
|
| 2005 |
Tokranov V, Yakimov M, Agnello G, Van Eisden J, Oktyabrsky S. Tunnel quantum dot/well InAs/InGaAs structures as active medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 5734: 65-74. DOI: 10.1117/12.591156 |
0.573 |
|
| 2005 |
Oktyabrsky S, Yakimov M, Tokranov V, Van Eisden J, Katsnelson A. Oxidation lift-off technology Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5730: 149-157. DOI: 10.1117/12.591112 |
0.473 |
|
| 2005 |
Yakimov M, Tokranov V, Agnello G, Van Eisden J, Oktyabrsky S. In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1221-1225. DOI: 10.1116/1.1881634 |
0.646 |
|
| 2005 |
Oktyabrsky S, Lamberti M, Tokranov V, Agnello G, Yakimov M. Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures Journal of Applied Physics. 98. DOI: 10.1063/1.2037872 |
0.616 |
|
| 2005 |
Mintairov A, Tang Y, Merz J, Tokranov V, Oktyabrsky S. Single dot near-field spectroscopy for photonic crystal microcavities Physica Status Solidi C: Conferences. 2: 845-849. DOI: 10.1002/Pssc.200460326 |
0.335 |
|
| 2004 |
Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Angello G, Oktyabrsky S. Nanoengineered InAs quantum dot active medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 5365: 72-79. DOI: 10.1117/12.529717 |
0.54 |
|
| 2004 |
Mintairov AM, Sun K, Merz JL, Li C, Vlasov AS, Vinokurov DA, Kovalenkov OV, Tokranov V, Oktyabrsky S. Nanoindentation and near-field spectroscopy of single semiconductor quantum dots Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.155306 |
0.366 |
|
| 2004 |
Oktyabrsky S, Katsnelson A, Tokranov V, Todt R, Yakimov M. Oxidation lift-off method for layer transfer of GaAs/AlAs-based structures Applied Physics Letters. 85: 151-153. DOI: 10.1063/1.1769592 |
0.627 |
|
| 2004 |
Agnello G, Tokranov V, Lamberti M, Oktyabrsky S. TEM imaging for compositional analysis of self-assembeled INAS quantum dot structures Microscopy and Microanalysis. 10: 532-533. DOI: 10.1017/S1431927604886124 |
0.326 |
|
| 2003 |
Lamberti M, Katsnelson A, Yakimov M, Agnello G, Tokranov V, Oktyabrsky S. Room-temperature defect tolerance of shape engineered quantum dot structures Materials Research Society Symposium - Proceedings. 799: 305-310. DOI: 10.1557/Proc-799-Z5.36 |
0.621 |
|
| 2003 |
Tokranov DV, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered Quantum Dot Active Medium for Thermally-Stable Laser Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T7.3/Z7.3 |
0.644 |
|
| 2003 |
Katsnelson A, Tokranov V, Yakimov M, Oktyabrsky S. Integration of III-V optoelectronic components on Si platform Materials Research Society Symposium - Proceedings. 783: 217-222. DOI: 10.1557/Proc-783-B7.4 |
0.559 |
|
| 2003 |
Katsnelson A, Tokranov V, Yakimov M, Lamberti M, Oktyabrsky S. Hybrid integration of III-V optoelectronic devices on Si platform using BCB Proceedings of Spie - the International Society For Optical Engineering. 4997: 198-205. DOI: 10.1557/Proc-741-J5.15 |
0.631 |
|
| 2003 |
Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Oktyabrsky S. Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties Proceedings of Spie - the International Society For Optical Engineering. 4999: 509-517. DOI: 10.1557/Proc-737-E13.44 |
0.582 |
|
| 2003 |
Oktyabrsky S, Khmyrova I, Ryzhii V. Characteristics of Integrated QWIP-HBT-LED Up-Converter Ieee Transactions On Electron Devices. 50: 2378-2387. DOI: 10.1109/Ted.2003.819249 |
0.306 |
|
| 2003 |
Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Oktyabrsky S. Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium Applied Physics Letters. 83: 833-835. DOI: 10.1063/1.1598645 |
0.623 |
|
| 2003 |
Huang MB, Zhu J, Oktyabrsky S. Enhanced radiation hardness of photoluminescence from InAs quantum dots embedded in an AlAs/GaAs superlattice structure Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 211: 505-511. DOI: 10.1016/S0168-583X(03)01516-7 |
0.404 |
|
| 2003 |
Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered quantum dot active medium for thermally-stable laser diodes Materials Research Society Symposium - Proceedings. 794: 195-200. |
0.602 |
|
| 2003 |
Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered quantum dot active medium for thermally-stable laser diodes Materials Research Society Symposium - Proceedings. 794: 195-200. |
0.54 |
|
| 2002 |
Yakimov M, Tokranov V, Katnelson A, Oktyabrsky S. Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes Materials Research Society Symposium - Proceedings. 749: 239-244. DOI: 10.1557/Proc-749-W13.8 |
0.63 |
|
| 2002 |
Lamberti M, Tokranov V, Moore R, Yakimov M, Katsnelson A, Oktyabrsky S. Formation of defects in MBE re-grown GaAs films on GaAs/AlGaAs heterostructures Materials Research Society Symposium - Proceedings. 744: 369-374. DOI: 10.1557/Proc-744-M6.4 |
0.602 |
|
| 2002 |
Mintairov AM, Blagnov PA, Kovalenkov OV, Li C, Merz JL, Oktyabrsky S, Sun K, Tokranov V, Vlasov AS, Vinokurov DA. Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. Mrs Proceedings. 737. DOI: 10.1557/Proc-737-E7.4 |
0.351 |
|
| 2002 |
Mintairov AM, Blagnov PA, Kovalenkov OV, Li C, Merz JL, Oktyabrsky S, Tokranov V, Vlasov AS, Vinokurov DA. Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots. Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K11.2 |
0.368 |
|
| 2002 |
Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes Materials Research Society Symposium - Proceedings. 707: 143-148. DOI: 10.1557/Proc-707-H3.8.1 |
0.648 |
|
| 2002 |
Anjum D, Dovidenko K, Oktyabrsky S, Eisenbraun E, Kaloyeros AE. Physical properties and diffusion characteristics of CVD-grown TiSiN films Materials Research Society Symposium - Proceedings. 697: 341-346. DOI: 10.1557/Proc-697-P8.18 |
0.31 |
|
| 2002 |
Todt R, Dovidenko K, Katsnelson A, Tokranov V, Yakimov M, Oktyabrsky S. Oxidation kinetics and microstructure of wet-oxidized mbe-grown short-period AlGaAs superlattices Materials Research Society Symposium - Proceedings. 692: 561-566. DOI: 10.1557/Proc-692-H9.44.1 |
0.59 |
|
| 2002 |
Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dot laser diodes: Structure, characteristics and temperature dependence Proceedings of Spie - the International Society For Optical Engineering. 4656: 79-88. DOI: 10.1117/12.460804 |
0.556 |
|
| 2002 |
Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes Materials Research Society Symposium - Proceedings. 707: 143-148. |
0.555 |
|
| 2002 |
Katsnelson A, Tokranov V, Yakimov M, Lamberti M, Oktyabrsky S. Hybrid integration of III-V optoelectronic devices on Si platform using BCB Materials Research Society Symposium - Proceedings. 741: 123-128. |
0.59 |
|
| 2001 |
Yakimov M, Tokranov V, Oktyabrsky S. Dynamics of InAs quantum dots formation on AlAs and GaAs Materials Research Society Symposium - Proceedings. 648. DOI: 10.1557/Proc-648-P2.6 |
0.637 |
|
| 2001 |
Zhu J, Thaik M, Yakimov M, Oktyabrsky S, Kaloyeros AE, Huang MB. Ion beam radiation effects on InAs semiconductor quantum dots Materials Research Society Symposium - Proceedings. 647. DOI: 10.1557/Proc-647-O11.31 |
0.598 |
|
| 2001 |
Sharma AK, Kalyanaraman R, Narayan RJ, Oktyabrsky S, Narayan J. Carbon nanotube composites synthesized by ion-assisted pulsed laser deposition Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 79: 123-127. DOI: 10.1016/S0921-5107(00)00558-4 |
0.321 |
|
| 2001 |
Oktyabrsky S, Tokranov V, Yakimov M, Katsnelson A, Dovidenko K. Vertical stacks of InAs quantum dots embedded into short-period AlAs/GaAs superlattice Materials Research Society Symposium - Proceedings. 642: J3.30.1-J3.30.6. |
0.559 |
|
| 2000 |
Dovidenko K, Beasor S, Topol A, Efstathiadis H, Oktyabrsky S, Shokhor S, Naar S, Kaloyeros A. Microstructural Effects in the Thermochromic Behavior of VO2/Al/Si Thin Film Heterostructures Mrs Proceedings. 654. DOI: 10.1557/Proc-654-Aa3.42.1 |
0.375 |
|
| 2000 |
Wei Q, Sankar J, Sharma AK, Oktyabrsky S, Narayan J, Narayan RJ. Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition Journal of Materials Research. 15: 633-641. DOI: 10.1557/Jmr.2000.0094 |
0.315 |
|
| 1999 |
Oktyabrsky S, Dovidenko K, Sharma AK, Joshkin V, Narayan J. Crystal structure and defects in nitrogen-deficient GaN Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S109257830000329X |
0.321 |
|
| 1999 |
Muth JF, Kolbas RM, Sharma AK, Oktyabrsky S, Narayan J. Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition Journal of Applied Physics. 85: 7884-7887. DOI: 10.1063/1.370601 |
0.311 |
|
| 1999 |
Oktyabrsky S, Dovidenko K, Sharma AK, Narayan J, Joshkin V. Cubic GaN formation under nitrogen-deficient conditions Applied Physics Letters. 74: 2465-2467. DOI: 10.1063/1.123882 |
0.304 |
|
| 1998 |
Moxey DE, Sharma A, Narayan J, Lee CB, Oktyabrsky S, Muth J. Analysis of Undoped and Ag-doped High-Tc YBCO Superconducting Bolometers Fabricated Using a Novel Anti-Reflective Coating and Photolithographic Technique Mrs Proceedings. 541. DOI: 10.1557/Proc-541-667 |
0.358 |
|
| 1998 |
Wei Q, Sharma A, Narayan R, Ravindra N, Oktyabrsky S, Sankar J, Muth J, Kolbas R, Narayan J. Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition Mrs Proceedings. 526. DOI: 10.1557/Proc-526-331 |
0.305 |
|
| 1998 |
Dovidenko K, Oktyabrsky S, Sharma AK, Narayan J. TEM characterization of ZnO and AlN/ZnO thin films grown on sapphire Materials Research Society Symposium - Proceedings. 526: 311-316. DOI: 10.1557/Proc-526-311 |
0.304 |
|
| 1998 |
Sharma AK, Oktyabrsky S, Dovidenko K, Narayan J. Synthesis of single crystal gallium nitride films on sapphire by pulsed laser deposition Materials Research Society Symposium - Proceedings. 526: 293-298. DOI: 10.1557/Proc-526-293 |
0.305 |
|
| 1998 |
Oktyabrsky S, Dovidenko K, Sharma AK, Narayan J. Defects and interfaces in III-nitride/sapphire thin film heterostructures Materials Research Society Symposium - Proceedings. 526: 287-292. DOI: 10.1557/Proc-526-287 |
0.372 |
|
| 1998 |
Borek MA, Oktyabrsky S, Aboelfotoh MO, Narayan J. Properties of Cu3Ge films for contacts to Si and SiGe and Cu metallization Materials Research Society Symposium - Proceedings. 514: 269-274. DOI: 10.1557/Proc-514-269 |
0.32 |
|
| 1998 |
Narayan J, Dovidenko K, Sharma AK, Oktyabrsky S. Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures Journal of Applied Physics. 84: 2597-2601. DOI: 10.1063/1.368440 |
0.376 |
|
| 1997 |
Dovidenko K, Oktyabrsky S, Narayan J, Joshkin V, Razeghi M. Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys Mrs Proceedings. 482. DOI: 10.1557/Proc-482-411 |
0.334 |
|
| 1997 |
Borek MA, Oktyabrsky S, Aboelfotoh MO, Narayan J. Study of the interaction between Cu3Ge and (100) Si, and its effect on electrical properties Materials Research Society Symposium - Proceedings. 448: 431-435. DOI: 10.1557/Proc-448-431 |
0.357 |
|
| 1997 |
Aboelfotoh MO, Oktyabrsky S, Narayan J, Woodall JM. Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs Journal of Materials Research. 12: 2325-2331. DOI: 10.1557/Jmr.1997.0308 |
0.397 |
|
| 1997 |
Kumar D, Oktyabrsky S, Kalyanaraman R, Narayan J, Apte P, Pinto R, Manoharan S, Hegde M, Ogale S, Adhi K. Role of silver doping in oxygen incorporation of oxide thin film Materials Science and Engineering: B. 45: 55-58. DOI: 10.1016/S0921-5107(96)01920-4 |
0.302 |
|
| 1996 |
Oktyabrsky S, Borek M, Aboelfotoh M, Narayan J. Investigation of Cu-Ge/Gaas Metal-Semiconductor Interfaces for Low Resistance Ohmic Contacts Mrs Proceedings. 448. DOI: 10.1557/Proc-448-383 |
0.369 |
|
| 1996 |
Oktyabrsky S, Aboelfotoh MO, Narayan J. Structure and electrical properties of Cu/Ge ohmic contacts Materials Research Society Symposium - Proceedings. 402: 541-546. DOI: 10.1557/Proc-402-541 |
0.347 |
|
| 1996 |
Dovidenko K, Oktyabrsky S, Narayan J, Razeghi M. Microstructural study of aluminum nitride thin films: epitaxy on the two orientations of sapphire and texturing on Si Materials Research Society Symposium - Proceedings. 395: 387-392. DOI: 10.1557/Proc-395-387 |
0.355 |
|
| 1996 |
Zheleva T, Oktyabrsky S, Jagannadham K, Vispute RD, Narayan J. Characterization of highly oriented (110) TiN films grown on epitaxial Ge/Si(001) heterostructures Journal of Materials Research. 11: 399-411. DOI: 10.1557/Jmr.1996.0049 |
0.342 |
|
| 1996 |
Dovidenko K, Oktyabrsky S, Narayan J, Razeghi M. Aluminum nitride films on different orientations of sapphire and silicon Journal of Applied Physics. 79: 2439-2445. DOI: 10.1063/1.361172 |
0.342 |
|
| 1996 |
Borek MA, Oktyabrsky S, Aboelfotoh MO, Narayan J. Low resistivity copper germanide on (100) Si for contacts and interconnections Applied Physics Letters. 69: 3560-3562. DOI: 10.1063/1.117245 |
0.356 |
|
| 1996 |
Gukasyan A, Kvit A, Klevkov Y, Oktyabrsky S. High-resolution PL characterization of impurity segregation and their complex formation on extended defects in CdTe Solid State Communications. 97: 897-902. DOI: 10.1016/0038-1098(95)00417-3 |
0.301 |
|
| 1996 |
Kumar D, Vispute RD, Aboelfotoh O, Oktyabrsky S, Narayan J, Apte PR, Pinto R, Jagannadham K. LaNiO 3 and Cu 3 Ge contacts to YBa 2 Cu 3 O 7-x films Journal of Electronic Materials. 25: 1760-1766. DOI: 10.1007/S11664-996-0032-1 |
0.307 |
|
| 1996 |
Oktyabrsky S, Aboelfotoh MO, Narayan J. Microstructure and chemistry of Cu-Ge ohmic contact layers to GaAs Journal of Electronic Materials. 25: 1673-1683. DOI: 10.1007/S11664-996-0022-3 |
0.375 |
|
| 1996 |
Oktyabrsky S, Aboelfotoh MO, Narayan J, Woodall JM. Cu 3 Ge ohmic contacts to n-type GaAs Journal of Electronic Materials. 25: 1662-1672. DOI: 10.1007/S11664-996-0021-4 |
0.352 |
|
| 1996 |
Joshkin VA, Pavlenko VN, Kvit AV, Oktyabrsky SR. High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film Journal of Applied Physics. 79: 3774-3777. |
0.385 |
|
| 1995 |
Dovidenko K, Oktyabrsky S, Narayan J, Razeghi M. Epitaxial growth of aluminum nitride on sapphire and silicon Materials Research Society Symposium - Proceedings. 358: 1023-1028. DOI: 10.1557/Proc-358-1023 |
0.342 |
|
| 1995 |
Oktyabrsky S, Wu H, Vispute RD, Narayan J. Misfit dislocations in low-temperature grown Ge/Si heterostructures Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 71: 537-551. DOI: 10.1080/01418619508244467 |
0.337 |
|
| 1994 |
Aboelfotoh MO, Oktyabrsky S, Narayan J, Woodall JM. Microstructure characterization of Cu3Ge/n-type GaAs ohmic contacts Journal of Applied Physics. 76: 5760-5763. DOI: 10.1063/1.358386 |
0.4 |
|
| 1993 |
Pechen EV, Schoenberger R, Brunner B, Ritzinger S, Renk KF, Sidorov MV, Oktyabrsky SR. Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers Journal of Applied Physics. 74: 3614-3616. DOI: 10.1063/1.354500 |
0.307 |
|
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