Year |
Citation |
Score |
2011 |
Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, Denbaars SP, Speck JS. Electroluminescence enhancement of (112̄2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Current Applied Physics. 11: 954-958. DOI: 10.1016/J.Cap.2011.01.001 |
0.482 |
|
2010 |
Onuma T, Uedono A, Asamizu H, Sato H, Kaeding JF, Iza M, Denbaars SP, Nakamura S, Chichibu SF. Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10̄1̄1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3337098 |
0.37 |
|
2008 |
Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] Journal of Applied Physics. 103: 89901. DOI: 10.1063/1.2903974 |
0.54 |
|
2008 |
David A, Grundmann MJ, Kaeding JF, Gardner NF, Mihopoulos TG, Krames MR. Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2839305 |
0.329 |
|
2008 |
Hoshi T, Koyama T, Sugawara M, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2129-2132. DOI: 10.1002/Pssc.200778473 |
0.597 |
|
2007 |
Fujii K, Iwaki Y, Masui H, Baker TJ, Iza M, Sato H, Kaeding J, Yao T, Speck JS, DenBaars SP, Nakamura S, Ohkawa K. Photoelectrochemical Properties of Nonpolar and Semipolar GaN Japanese Journal of Applied Physics. 46: 6573-6578. DOI: 10.1143/Jjap.46.6573 |
0.539 |
|
2007 |
Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Impact of strain on free-exciton resonance energies in wurtzite AlN Journal of Applied Physics. 102. DOI: 10.1063/1.2825577 |
0.581 |
|
2007 |
Koyama T, Sugawara M, Hoshi T, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2748315 |
0.582 |
|
2006 |
Kaeding JF, Iza M, Sato H, DenBaars SP, Speck JS, Nakamura S. Effect of substrate miscut on the direct growth of semipolar (101̄1̄) GaN on (100) MgAl2O4 by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L536 |
0.469 |
|
2006 |
Kaeding JF, Asamizu H, Sato H, Iza M, Mates TE, DenBaars SP, Speck JS, Nakamura S. Realization of high hole concentrations in Mg doped semipolar (101̄1̄)GaN Applied Physics Letters. 89. DOI: 10.1063/1.2378486 |
0.392 |
|
2006 |
Koyama T, Sugawara M, Uchinuma Y, Kaeding JF, Sharma R, Onuma T, Nakamura S, Chichibu SF. Strain-relaxation in NH 3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates Physica Status Solidi (a) Applications and Materials Science. 203: 1603-1606. DOI: 10.1002/Pssa.200565289 |
0.625 |
|
2004 |
Wu Y, Hanlon A, Kaeding JF, Sharma R, Fini PT, Nakamura S, Speck JS. Effect of nitridation on polarity, microstructure, and morphology of AlN films Applied Physics Letters. 84: 912-914. DOI: 10.1063/1.1646222 |
0.531 |
|
2004 |
Kaeding JF, Wu Y, Fujii T, Sharma R, Fini PT, Speck JS, Nakamura S. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Journal of Crystal Growth. 272: 257-263. DOI: 10.1016/J.Jcrysgro.2004.08.132 |
0.607 |
|
2003 |
Hanlon A, Pattison PM, Kaeding JF, Sharma R, Fini P, Nakamura S. 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base Japanese Journal of Applied Physics, Part 2: Letters. 42: L628-L630. DOI: 10.1143/Jjap.42.L628 |
0.576 |
|
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