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Aaron J. Fleischman, Ph.D. - Publications

Affiliations: 
2000 Case Western Reserve University, Cleveland Heights, OH, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Zorman C, Eldridge A, Du J, Johnston M, Dubnisheva A, Manley S, Fissell W, Fleischman A, Roy S. Amorphous silicon carbide as a non-biofouling structural material for biomedical microdevices Materials Science Forum. 717: 537-540. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.537  0.473
2009 Nath P, Strelnik J, Vasanji A, Moore LR, Williams PS, Zborowski M, Roy S, Fleischman AJ. Development of multistage magnetic deposition microscopy. Analytical Chemistry. 81: 43-9. PMID 19055419 DOI: 10.1021/Ac8010186  0.305
2007 Eldridge AN, Dubnisheva A, Fissell WH, Fleischman AJ, Roy S. Increased biocompatibility of common MEMS substrates with solution phase coupled poly(ethylene glycol) films Proceedings of the Asme Summer Bioengineering Conference 2007, Sbc 2007. 55-56.  0.309
2003 Fleischman A, Modi R, Nair A, Talman J, Lockwood G, Roy S. Miniature high frequency focused ultrasonic transducers for minimally invasive imaging procedures Sensors and Actuators a: Physical. 103: 76-82. DOI: 10.1016/S0924-4247(02)00323-0  0.317
2000 Mehregany M, Zorman CA, Roy S, Fleischman AJ, Wu CH, Rajan N. Silicon carbide for microelectromechanical systems International Materials Reviews. 45: 85-108. DOI: 10.1179/095066000101528322  0.54
1998 Fleischman AJ, Roy S, Zorman CA, Mehregany M. Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures Materials Science Forum. 889-894. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.889  0.558
1998 Wu CH, Fleischman AJ, Zorman CA, Mehregany M. Growth and characterization of SiC films on large-area Si wafers by APCVD - Temperature dependence Materials Science Forum. 264: 179-182. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.179  0.659
1998 Zorman CA, Roy S, Wu C, Fleischman AJ, Mehregany M. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon Journal of Materials Research. 13: 406-412. DOI: 10.1557/Jmr.1998.0053  0.705
1998 Fleischman AJ, Zorman CA, Mehregany M. Etching of 3C-SiC using CHF3/O2 and CHF3/O2/He plasmas at 1.75 Torr Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 536-539. DOI: 10.1116/1.589858  0.514
1998 Zorman CA, Roy S, Wu CH, Fleischman AJ, Mehregany M. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon Journal of Materials Research. 13: 406-412.  0.684
1998 Fleischman AJ, Roy S, Zorman CA, Mehregany M. Behavior of polycrystalline SiC and Si surface-micromachined lateral resonant structures at elevated temperatures Materials Science Forum. 264: 889-892.  0.524
1998 Fleischman AJ, Wei X, Zorman CA, Mehregany M. Surface micromachining of polycrystalline SiC deposited on SiO2 by APCVD Materials Science Forum. 264: 885-888.  0.664
1998 Deanna RG, Fleischman AJ, Zorman CA, Mehregany M. Design, operation, and modeling of a vertical APCVD reactor for silicon carbide film growth Journal of Wide Bandgap Materials. 6: 280-295.  0.583
1997 Roy S, Zorman CA, Wu CH, Fleischman AJ, Mehregany M. XRD and XTEM investigation of polycrystalline silicon carbide on polycrystalline silicon Materials Research Society Symposium - Proceedings. 444: 81-86.  0.683
1996 Roy S, Zorman CA, Wu CH, Fleischman AJ, Mehregany M. Xrd and Xtem Investigation of Polycrystalline Silicon Carbide on Polycrystalline Silicon Mrs Proceedings. 444. DOI: 10.1557/proc-444-81  0.683
1996 Fleischman AJ, Roy S, Zorman CA, Mehregany M, Matus LG. Polycrystalline silicon carbide for surface micromachining Proceedings of the Ieee Micro Electro Mechanical Systems (Mems). 234-238.  0.68
1995 Zorman CA, Fleischman AJ, Dewa AS, Mehregany M, Jacob C, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition Journal of Applied Physics. 78: 5136-5138. DOI: 10.1063/1.359745  0.67
1991 Baratte H, Fleischman AJ, Scilla GJ, Jackson TN, Hovel HJ, Cardone F. Process Damage and Contamination Effects for Shallow Si Implanted GaAs Journal of the Electrochemical Society. 138: 219-222. DOI: 10.1149/1.2085543  0.324
1991 Murakami M, Lustig N, Price WH, Fleischman A. Thermally stable, low‐resistance NiInWNxohmic contacts ton‐type GaAs prepared by sputter deposition Applied Physics Letters. 59: 2409-2411. DOI: 10.1063/1.106031  0.304
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