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Rama K. Kambhampati, Ph.D. - Publications

Affiliations: 
2011 Nanoscale Science and Engineering-Nanoscale Science State University of New York, Albany, Albany, NY, United States 
Area:
Nanoscience
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Rumyantsev S, Stillman W, Shur M, Heeg T, Schlom DG, Koveshnikov S, Kambhampati R, Tokranov V, Oktyabrsky S. Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric International Journal of High Speed Electronics and Systems. 20: 105-113. DOI: 10.1142/S0129156411006441  0.654
2011 Oktyabrsky S, Nagaiah P, Tokranov V, Yakimov M, Kambhampati R, Koveshnikov S, Veksler D, Goel N, Bersuker G. Electron scattering in buried InGaAs/high-K MOS channels International Journal of High Speed Electronics and Systems. 20: 95-103. DOI: 10.1142/S012915641100643X  0.55
2010 Ali A, Madan H, Koveshnikov S, Oktyabrsky S, Kambhampati R, Heeg T, Schlom D, Datta S. Small-signal response of inversion layers in high-mobility In 0.53Ga0.47As MOSFETs made with thin high-κ dielectrics Ieee Transactions On Electron Devices. 57: 742-748. DOI: 10.1109/Ted.2010.2041855  0.646
2009 Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W. Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Journal of Crystal Growth. 311: 1950-1953. DOI: 10.1016/J.Jcrysgro.2008.11.037  0.721
2008 Oktyabrsky S, Yakimov M, Tokranov V, Kambhampati R, Bakhru H, Koveshnikov S, Tsai W, Zhu F, Lee J. Challanges and progrss in III-V MOSFETs for CMOS circuits International Journal of High Speed Electronics and Systems. 18: 761-772. DOI: 10.1142/S0129156408005746  0.714
2006 Yakimov M, Tokranov V, Kambhampati R, Koveshnikov S, Tsai W, Zhu F, Lee J, Oktyabrsky S. Enhancement Mode GaAs n-MOSFET with High-k Dielectric The Japan Society of Applied Physics. 2006: 946-947. DOI: 10.7567/Ssdm.2006.E-8-1  0.627
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