Year |
Citation |
Score |
2008 |
Birdwell AG, Littler CL, Glosser R, Rebien M, Henrion W, Stauß P, Behr G. Evidence for an indirect gap in Β-FeSi2 epilayers by photoreflectance spectroscopy Applied Physics Letters. 92. DOI: 10.1063/1.2936076 |
0.699 |
|
2007 |
Landon PB, Gilleland CL, Synowczynski J, Hirsch SG, Glosser R. Synthesis of gold nano-wire and nano-dumbbell shaped colloids and AuC 60 nano-clusters Journal of Materials Science: Materials in Electronics. 18: 415-418. DOI: 10.1117/12.616945 |
0.661 |
|
2007 |
Landon PB, Gilleland CL, Glosser R. Properties of metallo-dielectric opals and metallic inverse opal photonic crystals Journal of Materials Science: Materials in Electronics. 18: 469-472. DOI: 10.1007/S10854-007-9247-Z |
0.705 |
|
2007 |
Landon PB, Gutierrez J, Gilleland LL, Jordan L, Ferraris JP, Glosser R. Inverse conjugated polymer opals and their luminescent spectra Journal of Materials Science: Materials in Electronics. 18: 235-238. DOI: 10.1007/S10854-007-9196-6 |
0.671 |
|
2005 |
Jarvis B, Gilleland CL, Gutierrez J, Stadler JW, Gillespe J, Sampson MM, Dalton A, Ferraris JP, Glosser R, Landon PB. Conjugated polymer infiltrated silica opals and the effect of nanoconfinement on the luminescent spectra Proceedings of Spie - the International Society For Optical Engineering. 5929: 1-10. DOI: 10.1117/12.617006 |
0.689 |
|
2005 |
Jarvis BC, Gilleland CL, Renfro T, Gutierrez J, Parikh K, Glosser R, Landon PB. Inverse opal photonic crystals with photonic band gaps in the visible and near-infrared Proceedings of Spie - the International Society For Optical Engineering. 5924: 1-9. DOI: 10.1117/12.616871 |
0.716 |
|
2005 |
Gilleland CL, Waters BD, Jarvis B, Schaefers JK, Renfro T, Gutierrez J, Ussery G, Cavanah T, Glosser R, Landon PB. Apoptosis method for biomimetic artificial cell membranes employing nanophotonic theranostics Proceedings of Spie - the International Society For Optical Engineering. 5925: 1-7. DOI: 10.1117/12.616229 |
0.646 |
|
2005 |
Birdwell AG, Davydov A, Littler CL, Glosser R, Pollak FH, Malikova L. Optical investigations of semiconducting FeSi2 using photoreflectance spectroscopy Aip Conference Proceedings. 772: 109-110. DOI: 10.1063/1.1994017 |
0.674 |
|
2005 |
Landon PB, Gilleland CL, Jarvis B, Waters BD, Inoue K, Glosser R. Self-assembly of colloidal silica into opals with large ordered single crystals Colloids and Surfaces a: Physicochemical and Engineering Aspects. 259: 31-33. DOI: 10.1016/J.Colsurfa.2005.01.030 |
0.689 |
|
2004 |
Landon PB, Glosser R. Self-assembly of spherical colloidal silica along the [100] direction of the FCC lattice and geometric control of crystallite formation. Journal of Colloid and Interface Science. 276: 92-6. PMID 15219434 DOI: 10.1016/J.Jcis.2004.01.021 |
0.689 |
|
2004 |
Demir G, Renfro TE, Glosser R, Saddow SE. Optical characterization of n- and p-doped 4H-SiC by electroreflectance spectroscopy Applied Physics Letters. 84: 3540-3542. DOI: 10.1063/1.1712037 |
0.669 |
|
2004 |
Birdwell AG, Shaffner TJ, Chandler-Horowitz D, Buh GH, Rebien M, Henrion W, Stauß P, Behr G, Malikova L, Pollak FH, Littler CL, Glosser R, Collins S. Excitonic transitions in β-FeSi 2 epitaxial films and single crystals Journal of Applied Physics. 95: 2441-2447. DOI: 10.1063/1.1643778 |
0.739 |
|
2003 |
Landon PB, Gutierrez J, Ferraris JP, Martinez IL, Giridharagopal R, Wu YC, Lee S, Parikh K, Gillespie J, Ussery G, Karimi B, Baughman R, Zakhidov A, Glosser R. Inverse gold photonic crystals and conjugated polymer coated opals for functional materials Physica B: Condensed Matter. 338: 165-170. DOI: 10.1016/S0921-4526(03)00480-0 |
0.697 |
|
2002 |
Srujana A, Wadhawan A, Srikala K, Gorman BP, Cottier RJ, Zhao W, Littler CL, Perez JM, Golding TD, Birdwell AG, Henrion W, Rebien M, Stauss P, Glosser R. Raman and magneto transport studies of MBE grown β-FeSi 2, β-(Fe 1-xCr x)Si 2, and β-(Fe 1-xCo x)Si 2 Materials Research Letters. 744. DOI: 10.1557/Proc-744-M5.43 |
0.661 |
|
2002 |
Bourree LE, Chasse DR, Thamban PLS, Glosser R. Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD Proceedings of Spie - the International Society For Optical Engineering. 4796: 11-22. DOI: 10.1117/12.450887 |
0.732 |
|
2002 |
Bourree LE, Chasse DR, Thamban PLS, Glosser R. MBE grown InGaAs photocathodes Proceedings of Spie - the International Society For Optical Engineering. 4796: 1-10. DOI: 10.1117/12.450884 |
0.724 |
|
2002 |
Collins S, Birdwell AG, Glosser R, Bennett BR. Characterization of InGaSb by photoreflectance spectroscopy Journal of Applied Physics. 91: 1175-1178. DOI: 10.1063/1.1429764 |
0.757 |
|
2002 |
Birdwell AG, Collins S, Glosser R, Leong DN, Homewood KP. Photoreflectance study of ion beam synthesized β-FeSi 2 Journal of Applied Physics. 91: 1219-1223. DOI: 10.1063/1.1428792 |
0.745 |
|
2002 |
Srujana A, Wadhawan A, Srikala K, Gorman BP, Cottier RJ, Zhao W, Littler CL, Perez JM, Golding TD, Birdwell AG, Henrion W, Rebien M, Stauss P, Glosser R. Raman and magneto transport studies of MBE grown β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 Materials Research Society Symposium - Proceedings. 744: 321-326. |
0.641 |
|
2001 |
Birdwell AG, Glosser R, Leong DN, Homewood KP. Raman investigation of ion beam synthesized β-FeSi2 Journal of Applied Physics. 89: 965-972. DOI: 10.1063/1.1326473 |
0.638 |
|
1996 |
Carpenter JP, Lukehart CM, Henderson DO, Mu R, Jones BD, Glosser R, Stock SR, Wittig JE, Zhu JG. Formation of crystalline germanium nanoclusters in a silica xerogel matrix from an organogermanium precursor Chemistry of Materials. 8: 1268-1274. DOI: 10.1021/Cm950548I |
0.351 |
|
1993 |
Estrera JP, Lambert S, Passmore KT, Phillips DL, Vernon SM, Glosser R, Flynt WE, Rector MA. Development of a 1- to 1.7-um image intensifier tube using a Generation III configuration Proceedings of Spie. 1952: 258-266. DOI: 10.1117/12.161402 |
0.326 |
|
1992 |
Durbin C, Estrera J, Glosser R, Duncan W, Henry R, Nordquist P, Bottka N, Gaskill D. EL2 Related Anomalous Splitting in the Photoreflectance Response of Semi-Insulating GaAs Mrs Proceedings. 262. DOI: 10.1557/Proc-262-289 |
0.324 |
|
1992 |
Badakhshan A, Durbin C, Glosser R, Alavi K, Nicholas S, Dale D, Capuder K. Correlation between electric field, temperature, and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs Semiconductors. 1678: 194-202. DOI: 10.1117/12.60456 |
0.349 |
|
1992 |
Durbin C, Estrera JP, Glosser R, Duncan W, Henry RL, Nordquist P, Bottka N, Gaskill DK. Anomalous splitting in the photoreflectance response of semi-insulating GaAs and correlation with EL2 Applied Physics Letters. 61: 1549-1551. DOI: 10.1063/1.107492 |
0.326 |
|
1991 |
Badakhshan A, Glosser R, Lambert S. Correlation between the photoreflectance response at E1 and carrier concentration in n- and p-GaAs Journal of Applied Physics. 69: 2525-2531. DOI: 10.1063/1.348691 |
0.352 |
|
1991 |
Giordana A, Glosser R. Photoreflectance studies of silicon films on sapphire Journal of Applied Physics. 69: 3303-3308. DOI: 10.1063/1.348552 |
0.311 |
|
1991 |
Giordana A, Glosser R. Front contact electroreflectance: An alternative technique for semiconductor optical studies Review of Scientific Instruments. 62: 1027-1030. DOI: 10.1063/1.1142053 |
0.344 |
|
1991 |
Badakhshan A, Glosser R, Lambert S, Anthony M, Sillmon RS, Thompson PE, Alavi K. Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs Applied Physics Letters. 59: 1218-1220. DOI: 10.1063/1.105508 |
0.349 |
|
1990 |
Giordana A, Glosser R, Pellegrino JG, Qadri S, Twigg ME, Richmond ED, Joyner K, Pollack G. Photoreflectance Characterization of Silicon Films on Insulator Mrs Proceedings. 188. DOI: 10.1557/Proc-188-349 |
0.324 |
|
1989 |
Giordana A, Glosser R, Pellegrino JG, Qadri S, Richmond ED. Photoreflectance and X-ray studies of silicon films on sapphire Materials Letters. 8: 64-68. DOI: 10.1016/0167-577X(89)90099-2 |
0.305 |
|
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