James H. Edgar - Publications

Affiliations: 
Department of Chemical Engineering Kansas State University, Manhattan, KS, United States 
Area:
Materials Science Engineering, Chemical Engineering

163 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Liu S, Comer J, van Duin ACT, van Duin DM, Liu B, Edgar JH. Predicting the preferred morphology of hexagonal boron nitride domain structure on nickel from ReaxFF-based molecular dynamics simulations. Nanoscale. PMID 30860524 DOI: 10.1039/c8nr10291k  0.72
2018 Li P, Dolado I, Alfaro-Mozaz FJ, Casanova F, Hueso LE, Liu S, Edgar JH, Nikitin AY, Vélez S, Hillenbrand R. Infrared hyperbolic metasurface based on nanostructured van der Waals materials. Science (New York, N.Y.). 359: 892-896. PMID 29472478 DOI: 10.1126/science.aaq1704  0.36
2017 Liu S, van Duin AC, van Duin DM, Liu B, Edgar JH. Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Ni from First-Principles-Based Reactive Molecular Dynamics Simulations. Acs Nano. PMID 28319661 DOI: 10.1021/acsnano.6b06736  0.72
2016 Li J, Cao XK, Hoffman TB, Edgar JH, Lin JY, Jiang HX. Nature of exciton transitions in hexagonal boron nitride Applied Physics Letters. 108. DOI: 10.1063/1.4944696  1
2016 Gul R, Cui Y, Bolotnikov AE, Camarda GS, Egarievwe SU, Hossain A, Roy UN, Yang G, Edgar JH, Nwagwu U, James RB. Photocurrent response of B12As2 crystals to blue light, and its temperature- dependent electrical characterizations Aip Advances. 6. DOI: 10.1063/1.4941937  1
2016 Padavala B, Frye CD, Wang X, Ding Z, Chen R, Dudley M, Raghothamachar B, Lu P, Flanders BN, Edgar JH. Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate Crystal Growth and Design. 16: 981-987. DOI: 10.1021/acs.cgd.5b01525  1
2016 Padavala B, Frye CD, Wang X, Raghothamachar B, Edgar JH. CVD growth and properties of boron phosphide on 3C-SiC Journal of Crystal Growth. 449: 15-21. DOI: 10.1016/j.jcrysgro.2016.05.031  1
2015 Hossain T, Wei D, Edgar JH, Garces NY, Nepal N, Hite JK, Mastro MA, Eddy CR, Meyer HM. Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931793  1
2015 Frye CD, Kucheyev SO, Edgar JH, Voss LF, Conway AM, Shao Q, Nikoli? RJ. Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4917010  1
2015 Baranov DG, Edgar JH, Hoffman T, Bassim N, Caldwell JD. Perfect interferenceless absorption at infrared frequencies by a van der Waals crystal Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.201405  1
2015 Padavala B, Frye CD, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar JH. Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide Solid State Sciences. 47: 55-60. DOI: 10.1016/j.solidstatesciences.2015.03.002  1
2014 Le Godec Y, Mezouar M, Kurakevych OO, Munsch P, Nwagwu U, Edgar JH, Solozhenko VL. Equation of state of single-crystal cubic boron phosphide Journal of Superhard Materials. 36: 61-64. DOI: 10.3103/S1063457614010092  1
2014 Hoffman TB, Zhang Y, Edgar JH, Gaskill DK. Growth of hBN using metallic boron: Isotopically Enriched h10BN and h11BN Prehospital and Disaster Medicine. 1635. DOI: 10.1557/opl.2014.48  1
2014 Wei D, Hossain T, Briggs DP, Edgar JH. A comparison of N-polar (0001) GaN surface preparations for the atomic layer deposition of Al2O3 Ecs Journal of Solid State Science and Technology. 3: N127-N131. DOI: 10.1149/2.0201410jss  1
2014 Wei D, Edgar JH, Briggs DP, Retterer ST, Srijanto B, Hensley DK, Meyer HM. Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4897919  1
2014 Du XZ, Fyre CD, Edgar JH, Lin JY, Jiang HX. Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence Journal of Applied Physics. 115. DOI: 10.1063/1.4863823  1
2014 Edgar JH, Hoffman TB, Clubine B, Currie M, Du XZ, Lin JY, Jiang HX. Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique Journal of Crystal Growth. 403: 110-113. DOI: 10.1016/j.jcrysgro.2014.06.006  1
2014 Hoffman TB, Clubine B, Zhang Y, Snow K, Edgar JH. Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystals Journal of Crystal Growth. 393: 114-118. DOI: 10.1016/j.jcrysgro.2013.09.030  1
2014 Wei D, Hossain T, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Edgar JH. Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 898-901. DOI: 10.1002/pssc.201300677  1
2014 Hossain T, Wei D, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Baker T, Mayo A, Schmitt J, Edgar JH. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 565-568. DOI: 10.1002/pssc.201300659  1
2014 Hoffman TB, Zhang Y, Edgar JH, Khan N, Szoszkiewicz R. Morphology of bulk hexagonal boron nitride grown from Ni-Cr flux Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1591-1598.  1
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B. Crystal growth and characterization of cubic boron phosphide on silicon carbide Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1575-1581.  1
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B, Schmitt J. Heteroepitaxial growth of boron phosphide on 3C-SiC/Si(100) and AlN/sapphire(0001) substrates Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1583-1590.  1
2013 Frye CD, Edgar JH, Ohkubo I, Mori T. Seebeck coefficient and electrical resistivity of single crystal B 12As2 at high temperatures Journal of the Physical Society of Japan. 82. DOI: 10.7566/JPSJ.82.095001  1
2013 Wei D, Hossain T, Garces NY, Nepal N, Meyer HM, Kirkham MJ, Eddy CR, Edgar JH. Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor Ecs Journal of Solid State Science and Technology. 2: N110-N114. DOI: 10.1149/2.010305jss  1
2013 Cao XK, Clubine B, Edgar JH, Lin JY, Jiang HX. Two-dimensional excitons in three-dimensional hexagonal boron nitride Applied Physics Letters. 103. DOI: 10.1063/1.4829026  1
2013 Whiteley CE, Kirkham MJ, Edgar JH. The coefficients of thermal expansion of boron arsenide (B 12As2) between 25 °c and 850 °c Journal of Physics and Chemistry of Solids. 74: 673-676. DOI: 10.1016/j.jpcs.2012.12.026  1
2012 Frye CD, Edgar JH, Zhang Y, Cooper K, Nyakiti LO, Gaskill DK. Synthesis of icosahedral boron arsenide nanowires for betavoltaic applications Materials Research Society Symposium Proceedings. 1439: 69-75. DOI: 10.1557/opl.2012.1156  1
2012 Klein PB, Nwagwu U, Edgar JH, Freitas JA. Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B 12As 2 Journal of Applied Physics. 112. DOI: 10.1063/1.4729920  1
2012 Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Growth mechanisms and defect structures of B 12As 2 epilayers grown on 4 H-SiC substrates Journal of Crystal Growth. 352: 3-8. DOI: 10.1016/j.jcrysgro.2011.12.065  1
2012 Nyakiti LO, Lee RG, Gu Z, Edgar JH, Chaudhuri J. Polarity determination of rough and smooth surface grains in AlN crystals Crystal Research and Technology. 47: 1134-1139. DOI: 10.1002/crat.201200005  1
2011 Whiteley CE, Mayo A, Edgar JH, Dudley M, Zhang Y. Defect-selective etching of icosahedral boron arsenide (B 12As 2) crystals in molten potassium hydroxide Materials Research Society Symposium Proceedings. 1307: 79-85. DOI: 10.1557/opl.2011.504  1
2011 Whiteley CE, Zhang Y, Mayo A, Edgar JH, Gong Y, Kuball M, Dudley M. Solution growth and characterization of icosahedral boron arsenide (B 12As 2) Materials Research Society Symposium Proceedings. 1307: 66-72. DOI: 10.1557/opl.2011.502  1
2011 Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films Materials Research Society Symposium Proceedings. 1307: 15-20. DOI: 10.1557/opl.2011.316  1
2011 Hossain T, Wei D, Edgar JH. Electrical characteristics of GaN and Si based Metal-Oxide-Semiconductor (MOS) capacitors Ecs Transactions. 41: 429-437. DOI: 10.1149/1.3633058  1
2011 Wu J, Zhu H, Hou D, Ji C, Whiteley CE, Edgar JH, Ma Y. High pressure X-ray diffraction study on icosahedral boron arsenide (B 12As2) Journal of Physics and Chemistry of Solids. 72: 144-146. DOI: 10.1016/j.jpcs.2010.12.005  1
2011 Whiteley CE, Zhang Y, Gong Y, Bakalova S, Mayo A, Edgar JH, Kuball M. Semiconducting icosahedral boron arsenide crystal growth for neutron detection Journal of Crystal Growth. 318: 553-557. DOI: 10.1016/j.jcrysgro.2010.10.057  1
2011 Bohnen T, Van Dreumel GWG, Hageman PR, Yazdi GR, Yakimova R, Vlieg E, Algra RE, Verheijen MA, Edgar JH. Scandium aluminum nitride nanowires Scandium: Compounds, Productions and Applications. 135-152.  1
2010 Bakalova S, Gong Y, Cobet C, Esser N, Zhang Y, Edgar JH, Zhang Y, Dudley M, Kuball M. Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometry. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395801. PMID 21403232 DOI: 10.1088/0953-8984/22/39/395801  1
2010 Li F, Shishkin E, Mastro MA, Hite JK, Eddy CR, Edgar JH, Ito T. Photopolymerization of self-assembled monolayers of diacetylenic alkylphosphonic acids on group-III nitride substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 10725-30. PMID 20524692 DOI: 10.1021/la100273q  1
2010 Bakalova S, Gong Y, Cobet C, Esser N, Zhang Y, Edgar JH, Dudley M, Kuball M. Energy band structure and optical response function of icosahedral B12 As2: A spectroscopic ellipsometry and first-principles calculational study Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.075114  1
2010 Gong Y, Zhang Y, Dudley M, Edgar JH, Heard PJ, Kuball M. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3486518  1
2010 Gong Y, Tapajna M, Bakalova S, Zhang Y, Edgar JH, Dudley M, Hopkins M, Kuball M. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device Applied Physics Letters. 96. DOI: 10.1063/1.3443712  1
2010 Nyakiti LO, Chaudhuri J, Gu Z, Edgar JH. Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains Journal of Crystal Growth. 312: 3479-3484. DOI: 10.1016/j.jcrysgro.2010.09.014  1
2010 Du L, Edgar JH, Peascoe-Meisner RA, Gong Y, Bakalova S, Kuball M. Sublimation crystal growth of yttrium nitride Journal of Crystal Growth. 312: 2896-2903. DOI: 10.1016/j.jcrysgro.2010.06.011  1
2010 Zhang Y, Chen H, Choi G, Raghothamachar B, Dudley M, Edgar JH, Grasza K, Tymicki E, Zhang L, Su D, Zhu Y. Nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC crystals Journal of Electronic Materials. 39: 799-804. DOI: 10.1007/s11664-010-1105-8  1
2010 Du L, Edgar JH, Kenik EA, Meyer H. Sublimation growth of titanium nitride crystals Journal of Materials Science: Materials in Electronics. 21: 78-87. DOI: 10.1007/s10854-009-9873-8  1
2010 Du L, Edgar JH. Thermodynamic analysis and purification for source materials in sublimation crystal growth of aluminum nitride Materials Research Society Symposium Proceedings. 1202: 221-227.  1
2010 Gao W, Whiteley C, Zhang Y, Plummer J, Edgar JH, Gong YY, Kuball M. Attempt to grow α-rhombohedral boron crystals in copper solvent Materials Research Society Symposium Proceedings. 1164: 73-78.  1
2010 Zhang Y, Edgar JH, Plummer J, Whiteley C, Chen H, Dudley M, Gong Y, Gray J, Kuball M. Growth of boron carbide crystals from a copper flux Materials Research Society Symposium Proceedings. 1164: 67-72.  1
2010 Zhang Y, Chen H, Zhang N, Dudley M, Gong Y, Kuball M, Xu Z, Edgar JH, Zhang L, Zhu Y. Origins of twinned microstructures in B12As2 epilayers grown on (0001) 6H-SiC and their influence on physical properties Materials Research Society Symposium Proceedings. 1164: 121-127.  1
2010 Yu Z, Hui C, Dudley M, Yi Z, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Kisslinger K, Zhu Y. Mechanism for improved quality B12As2 epitaxial films on (0001) 4H-SiC substrates offcut towards [1-100] Materials Research Society Symposium Proceedings. 1246: 71-76.  1
2009 Sedhain A, Du L, Edgar JH, Lin JY, Jiang HX. The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates Applied Physics Letters. 95. DOI: 10.1063/1.3276567  1
2009 Bohnen T, Yazdi GR, Yakimova R, van Dreumel GWG, Hageman PR, Vlieg E, Algra RE, Verheijen MA, Edgar JH. ScAlN nanowires: A cathodoluminescence study Journal of Crystal Growth. 311: 3147-3151. DOI: 10.1016/j.jcrysgro.2009.03.023  1
2009 Bohnen T, Van Dreumel GWG, Hageman PR, Algra RE, Van Enckevort WJP, Vlieg E, Verheijen MA, Edgar JH. Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE Physica Status Solidi (a) Applications and Materials Science. 206: 2809-2815. DOI: 10.1002/pssa.200925060  1
2008 Ito T, Forman SM, Cao C, Li F, Eddy CR, Mastro MA, Holm RT, Henry RL, Hohn KL, Edgar JH. Self-assembled monolayers of alkylphosphonic acid on GaN substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 6630-5. PMID 18522438 DOI: 10.1021/la800716r  1
2008 Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613  1
2008 Chen H, Wang G, Dudley M, Xu Z, Edgar JH, Batten T, Kuball M, Zhang L, Zhu Y. Single-crystalline B12As2 on m-plane (1100) 15R-SiC Applied Physics Letters. 92. DOI: 10.1063/1.2945635  1
2008 Chen H, Wang G, Dudley M, Zhang L, Wu L, Zhu Y, Xu Z, Edgar JH, Kuball M. Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC Journal of Applied Physics. 103. DOI: 10.1063/1.2940132  1
2008 Gray JC, Pomeroy JW, Kuball M, Xu Z, Edgar JH, Chen H, Dudley M. An investigation of phonon decay in B12 As2 by Raman scattering spectroscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2919785  1
2008 Chaudhuri J, Lee RG, Nyakiti LO, Gu Z, Edgar JH, Li P. Thermal oxidation of single crystal aluminum nitride - A high resolution transmission electron microscopy study Materials Letters. 62: 2465-2468. DOI: 10.1016/j.matlet.2007.12.023  1
2008 Chaudhuri J, Lee RG, Nyakiti L, Armstrong J, Gu Z, Edgar JH, Wen JG. Transmission electron microscopy study of defect-selective etched (010) ScN crystals Materials Letters. 62: 27-29. DOI: 10.1016/j.matlet.2007.04.104  1
2008 Edgar JH, Du L, Nyakiti L, Chaudhuri J. Native oxide and hydroxides and their implications for bulk AlN crystal growth Journal of Crystal Growth. 310: 4002-4006. DOI: 10.1016/j.jcrysgro.2008.06.014  1
2008 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth. 310: 2464-2470. DOI: 10.1016/j.jcrysgro.2008.01.010  1
2008 Edgar JH, Bohnen T, Hageman PR. HVPE of scandium nitride on 6H-SiC(0 0 0 1) Journal of Crystal Growth. 310: 1075-1080. DOI: 10.1016/j.jcrysgro.2007.12.053  1
2008 Chaudhuri J, Nyakiti LO, Peng L, Edgar JH. Transmission electron microscopy study of interface region of AlN/6H-SiC Materials Research Society Symposium Proceedings. 1040: 190-195.  1
2008 Nyakiti LO, Chaudhuri J, Kenik EA, Lu P, Edgar JH. Defect selective etching of thick ALN layers grown on 6H-SiC seeds - A transmission electron microscopy study Materials Research Society Symposium Proceedings. 1040: 7-12.  1
2007 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/jmr.2007.0077  1
2007 Ito T, Forman SM, Cao C, Eddy CR, Mastro MA, Holm RT, Henry RL, Hohn K, Edgar JH. Monolayer formation on GaN surface via self-assembly Ecs Transactions. 11: 97-101. DOI: 10.1149/1.2783862  1
2007 Xu Z, Edgar JH, Look DC, Baumann S, Bleiler RJ, Wang SH, Mohney SE. The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates Journal of Applied Physics. 101. DOI: 10.1063/1.2437687  1
2007 Lu P, Edgar JH. The influence of the H2/Ar ratio on surface morphology and structural defects in homoepitaxial 4H-SiC films grown with methyltrichlorosilane Journal of Applied Physics. 101. DOI: 10.1063/1.2435066  1
2007 Chaudhuri J, Nyakiti L, Lee RG, Gu Z, Edgar JH, Wen JG. Thermal oxidation of single crystalline aluminum nitride Materials Characterization. 58: 672-679. DOI: 10.1016/j.matchar.2006.11.013  1
2007 Lu P, Edgar JH, Lee RG, Chaudhuri J. Nucleation of AlN on SiC substrates by seeded sublimation growth Journal of Crystal Growth. 300: 336-342. DOI: 10.1016/j.jcrysgro.2006.11.324  1
2007 Chen H, Wang G, Dudley M, Zhang L, Zhu Y, Zhang Y, Edgar JH, Kuball M. Defect structures of B12As2 epilayers grown on c-plane and a-plane 6H-SiC substrates Materials Research Society Symposium Proceedings. 994: 29-34.  1
2006 Gu Z, Edgar JH, Wang C, Coffey DW. Thermal oxidation of aluminum nitride powder Journal of the American Ceramic Society. 89: 2167-2171. DOI: 10.1111/j.1551-2916.2006.01065.x  1
2006 Xu Z, Edgar JH, Speakman S. Heteroepitaxial B12As2 on silicon substrates Journal of Crystal Growth. 293: 162-168. DOI: 10.1016/j.jcrysgro.2006.04.092  1
2006 Gu Z, Edgar JH, Coffey DW, Chaudhuri J, Nyakiti L, Lee RG, Wen JG. Defect-selective etching of scandium nitride crystals Journal of Crystal Growth. 293: 242-246. DOI: 10.1016/j.jcrysgro.2006.03.065  1
2006 Edgar JH, Gu Z, Gu L, Smith DJ. Interface properties of an AIN/(AIN) x(SiC) 1-x/4H-SiC heterostructure Physica Status Solidi (a) Applications and Materials Science. 203: 3720-3725. DOI: 10.1002/pssa.200622279  1
2006 Li D, Edgar JH. Thermodynamic analysis of impurities in the sublimation growth of AlN single crystals Materials Research Society Symposium Proceedings. 955: 342-347.  1
2006 Mercurio L, Edgar JH, Du L, Kenik EA. Titanium nitride epitaxy on tungsten (100) by sublimation crystal growth Materials Research Society Symposium Proceedings. 955: 378-384.  1
2006 Chaudhuri J, Lee RG, Nyakiti LO, Gu Z, Edgar JH, Li P. High resolution transmission electron microscopy study of thermal oxidation of single crystalline aluminum nitride Materials Research Society Symposium Proceedings. 955: 300-302.  1
2006 Edgar JH, Gu Z, Taggart K, Chaudhuri J, Nyakiti L, Lee RG, Witt R. Oxidation of aluminum nitride for defect characterization Materials Research Society Symposium Proceedings. 892: 505-510.  1
2006 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Bulk AlN crystal growth on SiC seeds and defects study Materials Research Society Symposium Proceedings. 955: 411-416.  1
2006 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500.  1
2005 Wang SH, Lysczek EM, Liu B, Mohney SE, Xu Z, Nagarajan R, Edgar JH. CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters. 87. DOI: 10.1063/1.2001760  1
2005 Zhuang D, Edgar JH. Wet etching of GaN, AlN, and SiC: A review Materials Science and Engineering R: Reports. 48: 1-46. DOI: 10.1016/j.mser.2004.11.002  1
2005 Liu B, Edgar JH, Raghothamachar B, Dudley M, Lin JY, Jiang HX, Sarua A, Kuball M. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 117: 99-104. DOI: 10.1016/j.mseb.2004.10.009  1
2005 Lu P, Edgar JH, Glembocki OJ, Klein PB, Glaser ER, Perrin J, Chaudhuri J. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition Journal of Crystal Growth. 285: 506-513. DOI: 10.1016/j.jcrysgro.2005.08.053  1
2005 Nagarajan R, Xu Z, Edgar JH, Baig F, Chaudhuri J, Rek Z, Payzant EA, Meyer HM, Pomeroy J, Kuball M. Crystal growth of B12As2 on SiC substrate by CVD method Journal of Crystal Growth. 273: 431-438. DOI: 10.1016/j.jcrysgro.2004.07.068  1
2005 Edgar JH, Gu Z, Lu P, Du L. Impurity incoporation during the sublimation growth of aluminum nitride crystals Aiche Annual Meeting, Conference Proceedings. 5387.  1
2005 Gu Z, Edgar JH, Speakman SA, Blom D, Perrin J, Chaudhuri J. Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers Journal of Electronic Materials. 34: 1271-1279.  1
2005 Gu Z, Du L, Edgar JH, Payzant EA, Walker L, Liu R, Engelhard MH. Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation Mrs Internet Journal of Nitride Semiconductor Research. 10: 1-8.  1
2005 Gu Z, Edgar JH, Payzant EA, Meyer HM, Walker LR, Sarua A, Kuball M. Sublimation growth of aluminum nitride-silicon carbide alloy crystals on SiC (0001) substrates Materials Research Society Symposium Proceedings. 831: 95-100.  1
2004 Pomeroy JW, Kuball M, Hubel H, Van Uden NWA, Dunstan DJ, Nagarajan R, Edgar JH. Raman spectroscopy of B 12As 2 under high pressure Journal of Applied Physics. 96: 910-912. DOI: 10.1063/1.1753072  1
2004 Gu Z, Edgar JH, Pomeroy J, Kuball M, Coffey DW. Crystal growth and properties of scandium nitride Journal of Materials Science: Materials in Electronics. 15: 555-559. DOI: 10.1023/B:JMSE.0000032591.54107.2c  1
2004 Vetter WM, Nagarajan R, Edgar JH, Dudley M. Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition Materials Letters. 58: 1331-1335. DOI: 10.1016/j.matlet.2003.09.042  1
2004 Zhuang D, Edgar JH, Liu B, Huey HE, Jiang HX, Lin JY, Kuball M, Mogal F, Chaudhuri J, Rek Z. Bulk AlN crystal growth by direct heating of the source using microwaves Journal of Crystal Growth. 262: 168-174. DOI: 10.1016/j.jcrysgro.2003.10.080  1
2004 Zhuang D, Edgar JH, Strojek B, Chaudhuri J, Rek Z. Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy Journal of Crystal Growth. 262: 89-94. DOI: 10.1016/j.jcrysgro.2003.10.051  1
2004 Liu B, Edgar JH, Gu Z, Zhuang D, Raghothamachar B, Dudley M, Sarua A, Kuball M, Meyer HM. The durability of various crucible materials for aluminum nitride crystal growth by sublimation Mrs Internet Journal of Nitride Semiconductor Research. 9.  1
2003 Nagarajan R, Edgar JH, Pomeroy J, Kuball M, Aselage T. Investigation of Thin Film Growth of B12As2 by Chemical Vapor Deposition Materials Research Society Symposium - Proceedings. 764: 283-287.  1
2003 Lu P, Edgar JH, Pomeroy J, Kuball M, Meyer HM, Aselage T. Growth of rhombohedral B12P2 thin films on 6H-SiC (0001) by chemical vapor deposition Materials Research Society Symposium - Proceedings. 799: 121-125.  1
2003 Sarua A, Rajasingam S, Kuball M, Garro N, Sancho O, Cros A, Cantarero A, Olguin D, Liu B, Zhuang D, Edgar JH. Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals Materials Research Society Symposium - Proceedings. 798: 297-302.  1
2002 Burkland B, Xie ZY, Edgar JH, Ervin M, Chaudhuri J, Farsinivas S. Effects of the addition of silane during carbonization on the epitaxy of 3C-SiC on Si Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1500349  1
2002 Liu L, Edgar JH. A global growth rate model for aluminum nitride sublimation Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1421349  1
2002 Van Uden NWA, Hubel H, Hayes JM, Prins AD, Kuball M, Dunstan DJ, Downes JR, Shi Y, Edgar JH. Determination of the mode grüneisen parameter of A1N using different fits on experimental high pressure data High Pressure Research. 22: 37-41. DOI: 10.1080/08957950211363  1
2002 Liu L, Liu B, Edgar JH, Rajasingam S, Kuball M. Raman characterization and stress analysis of AlN grown on SiC by sublimation Journal of Applied Physics. 92: 5183-5188. DOI: 10.1063/1.1506195  1
2002 Edgar JH, Liu L, Liu B, Zhuang D, Chaudhuri J, Kuball M, Rajasingam S. Bulk AlN crystal growth: Self-seeding and seeding on 6H-SiC substrates Journal of Crystal Growth. 246: 187-193. DOI: 10.1016/S0022-0248(02)01741-4  1
2002 Hageman W, Rys A, Schmitt J, Edgar JH, Liu B, Koleske DD. Capacitance-voltage characterization of AlN MIS structures grown on 6H-SiC(0001) substrates by MOCVD Physica Status Solidi C: Conferences. 129-132. DOI: 10.1002/pssc.200390006  1
2002 Liu L, Edgar JH. Substrates for gallium nitride epitaxy Materials Science and Engineering: R: Reports. 37: 61-128.  1
2002 Zhuang D, Edgar JH, Liu L, Liu B, Walker L. Wet chemical etching of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 7.  1
2001 Kuball M, Hayes JM, Shi Y, Edgar JH. Phonon lifetimes and decay channels in single-crystalline bulk AIN Proceedings of Spie - the International Society For Optical Engineering. 4280: 78-88. DOI: 10.1117/12.424745  1
2001 Kuball M, Hayes JM, Prins AD, Van Uden NWA, Dunstan DJ, Shi Y, Edgar JH. Raman scattering studies on single-crystalline bulk AIN under high pressures Applied Physics Letters. 78: 724-726. DOI: 10.1063/1.1344567  1
2001 Shi Y, Xie ZY, Liu LH, Liu B, Edgar JH, Kuball M. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique Journal of Crystal Growth. 233: 177-186. DOI: 10.1016/S0022-0248(01)01560-3  1
2001 Kuball M, Hayes JM, Shi Y, Edgar JH, Prins AD, Van Uden NWA, Dunstan DJ. Raman scattering studies on single-crystalline bulk AlN: Temperature and pressure dependence of the AlN phonon modes Journal of Crystal Growth. 231: 391-396. DOI: 10.1016/S0022-0248(01)01469-5  1
2001 Xie ZY, Edgar JH, Burkland BK, George JT, Chaudhuri J. DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0 0 0 1) Journal of Crystal Growth. 224: 235-243. DOI: 10.1016/S0022-0248(01)01024-7  1
2001 Shi Y, Liu B, Liu L, Edgar JH, Meyer HM, Payzant EA, Walker LR, Evans ND, Swadener JG, Chaudhuri J. Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 757-762. DOI: 10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S  1
2001 Liu L, Liu B, Shi Y, Edgar JH. Growth mode and defects in aluminum nitride sublimated on (0001) 6H-SiC substrates Materials Research Society Symposium - Proceedings. 639.  1
2001 Liu L, Liu B, Shi Y, Edgar JH. Growth mode and defects in aluminum nitride sublimed on (0001) 6H-SiC substrates Mrs Internet Journal of Nitride Semiconductor Research. 6.  1
2001 Hayes JM, Kuball M, Shi Y, Edgar JH. Raman analysis of single crystalline bulk aluminum nitride: Temperature dependence of the phonon frequencies Materials Research Society Symposium - Proceedings. 639.  1
2001 Kuball M, Hayes JM, Shi Y, Edgar JH. Phonon lifetimes and phonon decay channels in single crystalline bulk aluminum nitride Materials Research Society Symposium - Proceedings. 639.  1
2001 Liu B, Shi Y, Liu L, Edgar JH, Braski DN. Surface morphology and composition characterization at the initial stages of AlN crystal growth Materials Research Society Symposium - Proceedings. 639.  1
2001 Shi Y, Liu B, Liu L, Edgar JH, Payzant EA, Hayes JM, Kuball M. New technique for sublimation growth of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 6.  1
2000 Xie ZY, Chen SF, Edgar JH, Barghout K, Chaudhuri J. Polytype controlled SiC epitaxy on on-axis 6H-SiC(0001) by adding HCl during growth Electrochemical and Solid-State Letters. 3: 381-384. DOI: 10.1149/1.1391154  1
2000 Chaudhuri J, Ignatiev K, Edgar JH, Xie ZY, Gao Y, Rek Z. Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 76: 217-224. DOI: 10.1016/S0921-5107(00)00451-7  1
2000 Wei CH, Edgar JH, Ignatiev C, Chaudhuri J. Role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films Thin Solid Films. 360: 34-38. DOI: 10.1016/S0040-6090(99)00875-5  1
2000 Wei CH, Edgar JH. Unstable composition region in the wurtzite B1-x-yGaxAlyN system Journal of Crystal Growth. 208: 179-182. DOI: 10.1016/S0022-0248(99)00397-8  1
2000 Liu L, Edgar JH. Transport effects in the sublimation growth of aluminum nitride Journal of Crystal Growth. 220: 243-253. DOI: 10.1016/S0022-0248(00)00841-1  1
2000 Wei CH, Edgar JH. Thermodynamic analysis of GaxB1-xN grown by MOVPE Journal of Crystal Growth. 217: 109-114. DOI: 10.1016/S0022-0248(00)00498-X  1
2000 Xie ZY, Wei CH, Li LY, Yu QM, Edgar JH. Gaseous etching of 6H-SiC at relatively low temperatures Journal of Crystal Growth. 217: 115-124. DOI: 10.1016/S0022-0248(00)00480-2  1
2000 Kuball M, Hayes JM, Shi Y, Edgar JH. Phonon lifetimes in bulk AlN and their temperature dependence Applied Physics Letters. 77: 1958-1960.  1
2000 Chaudhuri J, George JT, Edgar JH, Xie ZY, Rek Z. Effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - an X-ray triple crystal diffractometry and synchrotron X-ray topography study Materials Science Forum. 338.  1
2000 Wei CH, Xie ZY, Li LY, Yu QM, Edgar JH. MOCVD growth of cubic GaN on 3C-SiC deposited on Si(100) substrates Journal of Electronic Materials. 29: 317-321.  1
2000 Xie ZY, Wei CH, Chen SF, Jiang SY, Edgar JH. Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD Journal of Electronic Materials. 29: 411-417.  1
2000 Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z. Comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide Materials Science Forum. 338: II/-.  1
2000 Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Chaudhuri J, Ignatiev C, Braski DN. MOCVD growth of GaBN on 6H-SiC (0001) substrates Journal of Electronic Materials. 29: 452-456.  1
1999 Xie ZY, Wei CH, Li LY, Edgar JH, Chaudhuri J, Ignatiev C. Effects of surface preparation on epitaxial GaN on 6H-SiC deposited via MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 4.  1
1999 Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Ignatiev C, Chaudhuri J, Braski DN. Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE Materials Research Society Symposium - Proceedings. 537.  1
1999 Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Ignatiev C, Chaudhuri J, Braski DN. Growth and characterization of B xGa 1-xN on 6H-SiC (0001) by MOVPE Mrs Internet Journal of Nitride Semiconductor Research. 4.  1
1998 Edgar JH, Xie ZY, Braski DN. The effects of the simultaneous addition of diborane and ammonia on the hot-filament assisted chemical vapor deposition of diamond Diamond and Related Materials. 7: 35-42.  1
1998 Xie ZY, Edgar JH, McCormick TL, Sidorov MV. The effects of the simultaneous addition of diborane and ammonia on the hot-filament-assisted chemical vapor deposition of diamond II. Characterization of diamond and BCN film Diamond and Related Materials. 7: 1357-1363.  1
1998 Gao Y, Edgar JH, Chaudhuri J, Cheema SN, Sidorov MV, Braski DN. Low-temperature chemical-vapor deposition of 3C-SiC films on Si(1 0 0) using SiH4-C2H4-HCl-H2 Journal of Crystal Growth. 191: 439-445.  1
1998 Edgar JH, Gao Y, Chaudhuri J, Cheema S, Casalnuovo SA, Yip PW, Sidorov MV. Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature Journal of Applied Physics. 84: 201-204.  1
1997 Edgar JH, Gao Y. Influence of HCl and H2 on the heteroepitaxial growth of 3C-SiC films on Si(100) via low-temperature chemical vapor deposition Materials Research Society Symposium - Proceedings. 441: 699-704.  1
1997 Gao Y, Edgar JH. Selective epitaxial growth of SiC: Thermodynamic analysis of the Si-C-Cl-H and Si-C-Cl-H-O systems Journal of the Electrochemical Society. 144: 1875-1880.  1
1997 Gao Y, Edgar JH. Thermodynamic analysis of blanket and selective epitaxy of SiC on Si and SiO2 masked Si Materials Research Society Symposium - Proceedings. 441: 735-740.  1
1997 Edgar JH, Wei CH, Smith DT, Kistenmacher TJ, Bryden WA. Hardness, elastic modulus and structure of indium nitride thin films on AIN-nucleated sapphire substrates Journal of Materials Science: Materials in Electronics. 8: 307-312.  1
1997 Edgar JH, Yu ZJ, Smith DJ, Chaudhuri J, Cheng X. X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001) Journal of Electronic Materials. 26: 1389-1393.  1
1997 Edgar JH, Smith DT, Eddy CR, Carosella CA, Sartwell BD. c-Boron-aluminum nitride alloys prepared by ion-beam assisted deposition Thin Solid Films. 298: 33-38.  1
1996 Chaudhuri J, Thokala R, Edgar JH, Sywe BS. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates Thin Solid Films. 274: 23-30.  1
1996 Edgar JH, Carosella CA, Eddy CR, Smith DT. Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition Journal of Materials Science: Materials in Electronics. 7: 247-253.  1
1995 Chaudhuri J, Thokala R, Edgar JH, Sywe BS. X-ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates Journal of Applied Physics. 77: 6263-6266. DOI: 10.1063/1.359158  1
1995 Edgar JH, Eddy CR, Sprague JA, Sartwell BD. Ion beam deposition of boron-aluminum nitride thin films Materials Research Society Symposium - Proceedings. 388: 183-188.  1
1994 Sywe BS, Yu ZJ, Burckhard S, Edgar JH. Epitaxial growth of SiC on sapphire substrates with an AIN buffer layer Journal of the Electrochemical Society. 141: 510-513. DOI: 10.1149/1.2054756  1
1994 Dissanayake A, Lin JY, Jiang HX, Yu ZJ, Edgar JH. Low-temperature epitaxial growth and photoluminescence characterization of GaN Applied Physics Letters. 65: 2317-2319. DOI: 10.1063/1.112729  1
1992 Ahmed AU, Rys A, Singh N, Edgar JH, Yu ZJ. Electrical and compositional properties of AlN-Si interfaces Journal of the Electrochemical Society. 139: 1146-1151. DOI: 10.1149/1.2069355  1
1992 Yu ZJ, Sywe BS, Ahmed AU, Edgar JH. The growth and characterization of GaN on sapphire and silicon Journal of Electronic Materials. 21: 383-387. DOI: 10.1007/BF02660470  1
1991 Yu ZJ, Edgar JH, Ahmed AU, Rys A. Metalorganic surface chemical adsorption deposition of AlN films by ammonia and trimethylaluminum Journal of the Electrochemical Society. 138: 196-199. DOI: 10.1149/1.2085536  1
1991 Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Choyke WJ, Clemen L, Yoganathan M, Yang JW, Pirouz P. Application of oxidation to the structural characterization of SiC epitaxial films Applied Physics Letters. 59: 183-185. DOI: 10.1063/1.105960  1
1991 Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Yang JW, Pirouz P, Choyke WJ, Clemen L, Yoganathan M. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers Applied Physics Letters. 59: 333-335. DOI: 10.1063/1.105587  1
1991 Edgar JH, Yu ZJ, Sywe BS. A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition Thin Solid Films. 204: 115-121. DOI: 10.1016/0040-6090(91)90497-L  1
1991 Sywe BS, Schlup JR, Edgar JH. Fourier transform infrared spectroscopic study of predeposition reactions in metalloorganic chemical vapor deposition of gallium nitride. 2 Chemistry of Materials. 3: 1093-1097.  1
1991 Sywe BS, Schlup JR, Edgar JH. Fourier transform infrared spectroscopic study of predeposition reactions in metalloorganic chemical vapor deposition of gallium nitride Chemistry of Materials. 3: 737-742.  1
1990 Edgar JH, Yu ZJ, Ahmed AU, Rys A. Low temperature metal-organic chemical vapor deposition of aluminum nitride with nitrogen trifluoride as the nitrogen source Thin Solid Films. 189: L11-L14. DOI: 10.1016/0040-6090(90)90469-T  1
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