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Fatemeh Shahedipour-Sandvik - Publications

Affiliations: 
Nanoscale Science and Engineering-Nanoscale Engineering State University of New York, Albany, Albany, NY, United States 
Area:
Nanotechnology, Materials Science Engineering, Electronics and Electrical Engineering
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78 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 McEwen B, Reshchikov MA, Rocco E, Meyers V, Hogan K, Andrieiev O, Vorobiov M, Demchenko DO, Shahedipour-Sandvik F. MOCVD Growth and Characterization of Be-Doped GaN. Acs Applied Electronic Materials. 4: 3780-3785. PMID 36035967 DOI: 10.1021/acsaelm.1c01276  0.345
2020 Meyers V, Rocco E, Hogan K, Tozier S, McEwen B, Mahaboob I, Shahedipour-Sandvik F. Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching Journal of Electronic Materials. 49: 3481-3489. DOI: 10.1007/S11664-020-07986-2  0.416
2018 Hogan K, Litz M, Shahedipour-Sandvik F. 3D GaN-based betavoltaic device design with high energy transfer efficiency. Applied Radiation and Isotopes : Including Data, Instrumentation and Methods For Use in Agriculture, Industry and Medicine. 145: 154-160. PMID 30639631 DOI: 10.1016/J.Apradiso.2018.12.032  0.367
2018 Mahaboob I, Hogan K, Novak SW, Shahedipour-Sandvik F, Tompkins RP, Lazarus N. Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 031203. DOI: 10.1116/1.5026804  0.449
2018 Marini J, Mahaboob I, Rocco E, Bell LD, Shahedipour-Sandvik F. Polarization engineered N-polar Cs-free GaN photocathodes Journal of Applied Physics. 124: 113101. DOI: 10.1063/1.5029975  0.362
2018 Marini J, Bell LD, Shahedipour-Sandvik F. Monte Carlo simulation of III-nitride photocathodes Journal of Applied Physics. 123: 124502. DOI: 10.1063/1.5022200  0.317
2018 Mahaboob I, Marini J, Hogan K, Rocco E, Tompkins RP, Lazarus N, Shahedipour-Sandvik F. Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures Journal of Electronic Materials. 47: 6625-6634. DOI: 10.1007/S11664-018-6576-Z  0.465
2017 Tompkins R, Mahaboob I, Shahedipour-Sandvik F, Lazarus N. Electrical properties of AlGaN/GaN HEMTs in stretchable geometries Solid-State Electronics. 136: 36-42. DOI: 10.1016/J.Sse.2017.06.014  0.404
2017 Marini J, Mahaboob I, Hogan K, Novak S, Bell LD, Shahedipour-Sandvik F. Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg Journal of Electronic Materials. 46: 5820-5826. DOI: 10.1007/S11664-017-5602-X  0.305
2016 Nikzad S, Hoenk M, Jewell AD, Hennessy JJ, Carver AG, Jones TJ, Goodsall TM, Hamden ET, Suvarna P, Bulmer J, Shahedipour-Sandvik F, Charbon E, Padmanabhan P, Hancock B, Bell LD. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials. Sensors (Basel, Switzerland). 16. PMID 27338399 DOI: 10.3390/S16060927  0.769
2016 McNamara JD, Phumisithikul KL, Baski AA, Marini J, Shahedipour-Sandvik F, Das S, Reshchikov MA. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching Journal of Applied Physics. 120: 155304. DOI: 10.1063/1.4964805  0.386
2016 Marini J, Leathersich J, Mahaboob I, Bulmer J, Newman N, Shahedipour-Sandvik F. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density Journal of Crystal Growth. 442: 25-30. DOI: 10.1016/j.jcrysgro.2016.02.029  0.373
2015 Bulmer J, Suvarna P, Leathersich J, Marini J, Mahaboob I, Newman N, Shahedipour-Sandvik F. Visible-blind APD heterostructure design with superior field confinement and low operating voltage Ieee Photonics Technology Letters. 28: 39-42. DOI: 10.1109/Lpt.2015.2479115  0.767
2015 Suvarna P, Bulmer J, Leathersich JM, Marini J, Mahaboob I, Hennessy J, Bell LD, Nikzad S, Shahedipour-Sandvik FS. Ion implantation-based edge termination to improve III-N APD reliability and performance Ieee Photonics Technology Letters. 27: 498-501. DOI: 10.1109/Lpt.2014.2382611  0.758
2014 Hennessy J, Bell LD, Nikzad S, Suvarna P, Leathersich JM, Marini J, Shahedipour-Sandvik F. Atomic-layer deposition for improved performance of III-N avalanche photodiodes Materials Research Society Symposium Proceedings. 1635. DOI: 10.1557/Opl.2014.204  0.799
2014 Leathersich J, Arkun E, Clark A, Suvarna P, Marini J, Dargis R, Shahedipour-Sandvik F. Deposition of GaN films on crystalline rare earth oxides by MOCVD Journal of Crystal Growth. 399: 49-53. DOI: 10.1016/J.Jcrysgro.2014.04.015  0.794
2014 Gagnon JC, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates Journal of Crystal Growth. 393: 98-102. DOI: 10.1016/J.Jcrysgro.2013.08.031  0.359
2014 Tompkins RP, Smith JR, Kirchner KW, Jones KA, Leach JH, Udwary K, Preble E, Suvarna P, Leathersich JM, Shahedipour-Sandvik F. GaN power schottky diodes with drift layers grown on four substrates Journal of Electronic Materials. 43: 850-856. DOI: 10.1007/S11664-014-3021-9  0.818
2014 Reshchikov MA, Mcnamara JD, Shahedipour-Sandvik F. Tunable thermal quenching of photoluminescence in GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 389-392. DOI: 10.1002/Pssc.201300540  0.335
2013 Arkun FE, Dargis R, Clark A, Smith RS, Lebby M, Leathersich JM, Shahedipour-Sandvik F. Growth of GaN by MOCVD on rare earth oxide on Si(111) Ecs Transactions. 58: 455-461. DOI: 10.1149/05804.0455ecst  0.366
2013 Shahedipour-Sandvik F, Leathersich J, Tompkins RP, Suvarna P, Tungare M, Walsh TA, Kirchner KW, Zhou S, Jones KA. Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074002  0.833
2013 Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598  0.817
2013 Leathersich J, Suvarna P, Tungare M, Shahedipour-Sandvik F. Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations Surface Science. 617: 36-41. DOI: 10.1016/J.Susc.2013.07.017  0.789
2013 Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F. HVPE GaN for high power electronic Schottky diodes Solid-State Electronics. 79: 238-243. DOI: 10.1016/J.Sse.2012.07.003  0.797
2013 Kumar P, Guha S, Shahedipour-Sandvik F, Narayan KS. Hybrid n-GaN and polymer interfaces: Model systems for tunable photodiodes Organic Electronics: Physics, Materials, Applications. 14: 2818-2825. DOI: 10.1016/J.Orgel.2013.08.003  0.382
2013 Suvarna P, Tungare M, Leathersich JM, Agnihotri P, Shahedipour-Sandvik F, Douglas Bell L, Nikzad S. Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates Journal of Electronic Materials. 42: 854-858. DOI: 10.1007/S11664-013-2537-8  0.813
2013 Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5  0.803
2012 Tungare M, Leathersich JM, Tripathi N, Suvarna P, Shahedipour-Sandvik F, Walsh TA, Tompkins RP, Jones KA. Crack-free III-nitride structures (> 3.5 μm) on silicon Materials Research Society Symposium Proceedings. 1324: 9-15. DOI: 10.1557/Opl.2011.961  0.762
2012 Sood AK, Welser RE, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Suvarna P, Shahedipour-Sandvik F. Development of small unit cell avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8375. DOI: 10.1117/12.923182  0.75
2012 Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1  0.759
2011 Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Suvarna P, Tungare M, Tripathi N, Shahedipour-Sandvik F. The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Journal of Materials Research. 26: 2895-2900. DOI: 10.1557/Jmr.2011.360  0.793
2011 Shahedipour-Sandvik F, Tripathi N, Bell LD. AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.897394  0.634
2011 Shahedipour-Sandvik FS, Tungare M, Leathersich J, Suvarna P, Tompkins R, Jones KA. III-Nitride devices on Si: Challenges and opportunities 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135260  0.715
2011 Tripathi N, Bell LD, Shahedipour-Sandvik F. AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization Journal of Applied Physics. 109. DOI: 10.1063/1.3599878  0.613
2011 Tungare M, Kamineni VK, Shahedipour-Sandvik F, Diebold AC. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD Thin Solid Films. 519: 2929-2932. DOI: 10.1016/J.Tsf.2010.12.079  0.772
2011 Tungare M, Shi Y, Tripathi N, Suvarna P, Shahedipour-Sandvik F. A Tersoff-based interatomic potential for wurtzite AlN Physica Status Solidi (a) Applications and Materials Science. 208: 1569-1572. DOI: 10.1002/Pssa.201001086  0.78
2010 Fahrenkopf NM, Shahedipour-Sandvik F, Tokranova N, Bergkvist M, Cady NC. Direct attachment of DNA to semiconducting surfaces for biosensor applications. Journal of Biotechnology. 150: 312-4. PMID 20869405 DOI: 10.1016/J.Jbiotec.2010.09.946  0.313
2010 Fahrenkopf NM, Jindal V, Tripathi N, Oktyabrsky S, Shahedipour-Sandvik F, Tokranova N, Bergkvist M, Cady NC. Exploiting phosphate dependent DNA immobilization on HfO2, ZrO2, and AlGaN for integrated biosensors Materials Research Society Symposium Proceedings. 1236: 115-120. DOI: 10.1557/Proc-1236-Ss05-16  0.671
2010 Tripathi N, Bell LD, Nikzad S, Shahedipour-Sandvik F. Effect of n+ GaN cap polarization field on Cs-free GaN photocathode characteristics Applied Physics Letters. 97. DOI: 10.1063/1.3476341  0.681
2010 Jindal V, Shahedipour-Sandvik F. Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride Journal of Applied Physics. 107. DOI: 10.1063/1.3309840  0.571
2010 Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A. Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Solid-State Electronics. 54: 1291-1294. DOI: 10.1016/J.Sse.2010.06.008  0.721
2009 Bell LD, Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik F. A III-nitride layered barrier structure for hyperspectral imaging applications Materials Research Society Symposium Proceedings. 1167: 61-68. DOI: 10.1557/Proc-1167-O06-03  0.814
2009 Jindal V, Shahedipour-Sandvik F. Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes Journal of Applied Physics. 106. DOI: 10.1063/1.3253575  0.525
2009 Jindal V, Shahedipour-Sandvik F. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN Journal of Applied Physics. 105. DOI: 10.1063/1.3106164  0.552
2009 Reshchikov MA, Shahedipour-Sandvik F, Messer BJ, Jindal V, Tripathi N, Tungare M. Defect-related photoluminescence in Mg-doped GaN nanostructures Physica B: Condensed Matter. 404: 4903-4906. DOI: 10.1016/J.Physb.2009.08.232  0.799
2009 Grandusky JR, Jindal V, Raynolds JE, Guha S, Shahedipour-Sandvik F. Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 158: 13-18. DOI: 10.1016/J.Mseb.2008.12.042  0.745
2009 Xu X, Jindal V, Shahedipour-Sandvik F, Bergkvist M, Cady NC. Direct immobilization and hybridization of DNA on group III nitride semiconductors Applied Surface Science. 255: 5905-5909. DOI: 10.1016/J.Apsusc.2009.01.029  0.509
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures Mrs Proceedings. 1087. DOI: 10.1557/Proc-1087-V07-02  0.793
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces Materials Research Society Symposium Proceedings. 1040: 158-164. DOI: 10.1557/Proc-1040-Q06-02  0.78
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F, Sandvik P, Tilak V. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD) Materials Research Society Symposium Proceedings. 1040: 171-177. DOI: 10.1557/Proc-1040-Q01-08  0.82
2008 Bell LD, Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik FS. III-nitride heterostructure layered tunnel barriers for a tunable hyperspectral detector Ieee Sensors Journal. 8: 724-729. DOI: 10.1109/Jsen.2008.923180  0.8
2008 Jindal V, Grandusky J, Jamil M, Tripathi N, Thiel B, Shahedipour-Sandvik F, Balch J, LeBoeuf S. Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy Physica E: Low-Dimensional Systems and Nanostructures. 40: 478-483. DOI: 10.1016/J.Physe.2007.07.026  0.811
2008 Jindal V, Tripathi N, Tungare M, Paschos O, Haldar P, Shahedipour-Sandvik F. Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1709-1711. DOI: 10.1002/Pssc.200778599  0.798
2008 Tripathi N, Bell LD, Grandusky JR, Jindal V, Shahedipour-Sandvik F. Growth and characterization of a novel hyperspectral detector using the III-nitrides Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2228-2230. DOI: 10.1002/Pssc.200778597  0.815
2007 Jindal V, Grandusky JR, Tripathi N, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application Journal of Materials Research. 22: 838-844. DOI: 10.1557/Jmr.2007.0141  0.805
2007 Grandusky JR, Jamil M, Jindal V, Tripathi N, Shahedipour-Sandvik F. Identification of important growth parameters for the development of high quality Alx>0.5Ga1-xN grown by metal organic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 441-447. DOI: 10.1116/1.2713409  0.822
2007 Jamil M, Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F. Mechanism of large area dislocation defect reduction in GaN layers on AlNSi (111) by substrate engineering Journal of Applied Physics. 102. DOI: 10.1063/1.2753706  0.829
2007 Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik F, Bell LD. AlGaN based tunable hyperspectral detector Applied Physics Letters. 90. DOI: 10.1063/1.2746069  0.813
2007 Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F, Lu H, Kaminsky EB, Melkote R. Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers Journal of Crystal Growth. 307: 309-314. DOI: 10.1016/J.Jcrysgro.2007.06.033  0.826
2007 Cao XA, Lu H, Kaminsky EB, Arthur SD, Grandusky JR, Shahedipour-Sandvik F. Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes Journal of Crystal Growth. 300: 382-386. DOI: 10.1016/J.Jcrysgro.2007.01.009  0.749
2007 Matyi RJ, Jamil M, Shahedipour-Sandvik F. High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures Physica Status Solidi (a) Applications and Materials Science. 204: 2598-2605. DOI: 10.1002/Pssa.200675683  0.427
2006 Jindal V, Grandusky J, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for biofluorescence application Materials Research Society Symposium Proceedings. 916: 97-102. DOI: 10.1557/Proc-0916-Dd05-03  0.756
2006 Grandusky JR, Jamil M, Jindal V, Shahedipour-Sandvik F, Lu H, Cao XA, Kaminsky EB. Effect of HVPE GaN substrate condition on the characteristics and performance of 405 nm LEDs Materials Research Society Symposium Proceedings. 916: 91-96. DOI: 10.1557/Proc-0916-Dd05-02  0.738
2006 Cartwright AN, Cheung MCK, Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Wetzel C, Li P, Detchprohm T, Nelson JS. Ultrafast carrier dynamics and recombination in green emitting InGaN MQW LED Materials Research Society Symposium Proceedings. 916: 77-87. DOI: 10.1557/Proc-0916-Dd04-10  0.706
2006 Cartwright AN, Cheung MC, Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Wetzel C, Li P, Detchprohm T, Nelson JS. Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED Mrs Proceedings. 916. DOI: 10.1557/PROC-0916-DD04-10  0.3
2006 Grandusky JR, Jindal V, Jamil M, Shahedipour-Sandvik F. Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer Materials Research Society Symposium Proceedings. 892: 691-696. DOI: 10.1557/Proc-0892-Ff27-07  0.79
2006 Jamil M, Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F. Dislocation reduction and structural properties of GaN layers grown on N+-implanted AIN/Si (111) substrates Materials Research Society Symposium Proceedings. 892: 537-542. DOI: 10.1557/Proc-0892-Ff22-03  0.824
2006 Jamil M, Irissou E, Grandusky JR, Jindal V, Shahedipour-Sandvik F. Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate defect engineering technique Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1787-1791. DOI: 10.1002/Pssc.200565342  0.779
2006 Schowalter LJ, Schujman SB, Liu W, Goorsky M, Wood MC, Grandusky J, Shahedipour-Sandvik F. Development of native, single crystal AlN substrates for device applications Physica Status Solidi (a) Applications and Materials Science. 203: 1667-1671. DOI: 10.1002/Pssa.200565385  0.734
2005 Shahedipour-Sandvik F, Jamil M, Topol K, Grandusky JR, Dunn KA, Ramer J, Merai VN. Origin of ring defects in high in content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study Mrs Internet Journal of Nitride Semiconductor Research. 10. DOI: 10.1557/S1092578300000557  0.65
2005 Jamil M, Grandusky JR, Shahedipour-Sandvik F. Effect of GaN surface treatment on the morphological and optoelectronic response of violet light emitting diodes Materials Research Society Symposium Proceedings. 831: 43-48. DOI: 10.1557/Proc-831-E1.8  0.725
2005 Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Liu R, Ponce FA, Cheung M, Cartwright A. Deep gireenn emissnion at 570nm from InGaN/GaN MQW active region growm on bulk AIN substrate Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-8. DOI: 10.1117/12.617829  0.721
2005 Jamil M, Grandusky JR, Jindal V, Shahedipour-Sandvik F, Guha S, Arif M. Development of low dislocation and strain reduced GaN on Sn (111) by substrate engineering Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-8. DOI: 10.1117/12.617704  0.748
2005 Grandusky JR, Jamil M, Jindal V, Deluca JA, Leboeuf SF, Cao XA, Arthur SD, Shahedipour-Sandvik F. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-9. DOI: 10.1117/12.617658  0.713
2005 Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD. Optimization of the active region of InGaNGaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1576-1581. DOI: 10.1116/1.1947804  0.69
2005 Shahedipour-Sandvik F, Grandusky J, Alizadeh A, Keimel C, Ganti SP, Taylor ST, LeBoeuf SF, Sharma P. Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2131199  0.702
2005 Jamil M, Grandusky JR, Jindal V, Shahedipour-Sandvik F, Guha S, Arif M. Development of strain reduced GaN on Si (111) by substrate engineering Applied Physics Letters. 87. DOI: 10.1063/1.2012538  0.815
2004 Cao XA, Teetsov JA, Shahedipour-Sandvik F, Arthur SD. Microstructural origin of leakage current in GaN/InGaN light-emitting diodes Journal of Crystal Growth. 264: 172-177. DOI: 10.1016/J.Jcrysgro.2004.01.031  0.392
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