| Year |
Citation |
Score |
| 2020 |
Gonzalo A, Utrilla AD, Aeberhard U, Braza V, Reyes DF, Marrón DF, Llorens JM, Alén B, Ben T, González D, Guzman A, Hierro A, Ulloa JM. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells Solar Energy Materials and Solar Cells. 210: 110500. DOI: 10.1016/J.Solmat.2020.110500 |
0.378 |
|
| 2019 |
Hierro A, Montes Bajo M, Ferraro M, Tamayo-Arriola J, Le Biavan N, Hugues M, Ulloa JM, Giudici M, Chauveau JM, Genevet P. Optical Phase Transition in Semiconductor Quantum Metamaterials. Physical Review Letters. 123: 117401. PMID 31573228 DOI: 10.1103/Physrevlett.123.117401 |
0.368 |
|
| 2019 |
Meng B, Tamayo-Arriola J, Le Biavan N, Montes Bajo M, Torres-Pardo A, Hugues M, Lefebvre D, Hierro A, Chauveau J, Faist J. Observation of Intersubband Absorption in
ZnO
Coupled Quantum Wells Physical Review Applied. 12. DOI: 10.1103/Physrevapplied.12.054007 |
0.411 |
|
| 2019 |
Gonzalo A, Stanojević L, Utrilla AD, Reyes DF, Braza V, Marrón DF, Ben T, González D, Hierro A, Guzman A, Ulloa JM. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states Solar Energy Materials and Solar Cells. 200: 109949. DOI: 10.1016/J.Solmat.2019.109949 |
0.436 |
|
| 2018 |
Hierro A, Bajo MM, Tamayo-Arriola J, Hugues M, Ulloa JM, Biavan NL, Peretti R, Julien F, Faist J, Chauveau J. Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells Proceedings of Spie. 10533. DOI: 10.1117/12.2290640 |
0.464 |
|
| 2018 |
Bajo MM, Tamayo-Arriola J, Biavan NL, Ulloa JM, Vennéguès P, Lefebvre D, Hugues M, Chauveau J-, Hierro A. Breaking the Intersubband Selection Rules for Absorption with Zn O Quantum Wells: Light Polarization Sensitivity under Normal Incidence Physical Review Applied. 10: 34022. DOI: 10.1103/Physrevapplied.10.034022 |
0.315 |
|
| 2018 |
Bajo MM, Tamayo-Arriola J, Hugues M, Ulloa JM, Biavan NL, Peretti R, Julien FH, Faist J, Chauveau J, Hierro A. Multisubband Plasmons in Doped Zn O Quantum Wells Physical Review Applied. 10: 24005. DOI: 10.1103/Physrevapplied.10.024005 |
0.35 |
|
| 2018 |
Jollivet A, Hinkov B, Pirotta S, Hoang H, Derelle S, Jaeck J, Tchernycheva M, Colombelli R, Bousseksou A, Hugues M, Biavan NL, Tamayo-Arriola J, Bajo MM, Rigutti L, Hierro A, et al. Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells Applied Physics Letters. 113. DOI: 10.1063/1.5058120 |
0.421 |
|
| 2018 |
Tamayo-Arriola J, Huerta-Barberà A, Bajo MM, Muñoz E, Muñoz-Sanjosé V, Hierro A. Rock-salt CdZnO as a transparent conductive oxide Applied Physics Letters. 113: 222101. DOI: 10.1063/1.5048771 |
0.434 |
|
| 2018 |
Tamayo-Arriola J, Bajo MM, Biavan NL, Lefebvre D, Kurtz A, Ulloa JM, Hugues M, Chauveau JM, Hierro A. Ga-doping of nonpolar m-plane ZnMgO with high Mg contents Journal of Alloys and Compounds. 766: 436-441. DOI: 10.1016/J.Jallcom.2018.06.298 |
0.43 |
|
| 2018 |
Utrilla AD, Grossi DF, Reyes DF, Gonzalo A, Braza V, Ben T, González D, Guzman A, Hierro A, Koenraad PM, Ulloa JM. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate Applied Surface Science. 444: 260-266. DOI: 10.1016/J.Apsusc.2018.03.098 |
0.398 |
|
| 2017 |
Gonzalez D, Braza V, Utrilla AD, Gonzalo A, Reyes DF, Ben T, Guzman A, Hierro A, Ulloa JM. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process. Nanotechnology. PMID 28770809 DOI: 10.1088/1361-6528/Aa83E2 |
0.405 |
|
| 2017 |
Quach P, Jollivet A, Isac N, Bousseksou A, Ariel F, Tchernycheva M, Julien FH, Bajo MM, Tamayo-Arriola J, Hierro A, Biavan NL, Hugues M, Chauveau J. Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation) Proceedings of Spie. 10105. DOI: 10.1117/12.2253868 |
0.464 |
|
| 2017 |
Chauveau J, Hugues M, Biavan NL, Lefebvre D, Bajo MM, Tamayo-Arriola J, Hierro A, Quach P, Jollivet A, Isac N, Bousseksou A, Tchernycheva M, Julien FH, Hinkov B, Strasser G, et al. Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system? (Conference Presentation) Proceedings of Spie. 10105. DOI: 10.1117/12.2253708 |
0.428 |
|
| 2017 |
Kurtz A, Muñoz E, Chauveau JM, Hierro A. Deep-level spectroscopy in metal–insulator–semiconductor structures Journal of Physics D. 50: 65104. DOI: 10.1088/1361-6463/Aa5006 |
0.409 |
|
| 2017 |
Biavan NL, Hugues M, Bajo MM, Tamayo-Arriola J, Jollivet A, Lefebvre D, Cordier Y, Vinter B, Julien F-, Hierro A, Chauveau J-. Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions Applied Physics Letters. 111: 231903. DOI: 10.1063/1.5003146 |
0.419 |
|
| 2016 |
González D, Reyes DF, Utrilla AD, Ben T, Braza V, Guzman A, Hierro A, Ulloa JM. General route for the decomposition of InAs quantum dots during the capping process. Nanotechnology. 27: 125703. PMID 26891164 DOI: 10.1088/0957-4484/27/12/125703 |
0.369 |
|
| 2016 |
Kurtz A, Hierro A, Lopez-Ponce M, Tabares G, Chauveau JM. Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/3/035010 |
0.515 |
|
| 2016 |
Utrilla AD, Ulloa JM, Gačević, Reyes DF, Artacho I, Ben T, González D, Hierro A, Guzman A. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells Solar Energy Materials and Solar Cells. 144: 128-135. DOI: 10.1016/J.Solmat.2015.08.009 |
0.443 |
|
| 2016 |
Nieda Y, Suzuki M, Nakamura A, Temmyo J, Tabares G, Kurtz A, Lopez M, Ulloa JM, Hierro A, Muñoz E. Wurtzite Zn1-y(MgxCd1-x)yO quaternary systems for photodiodes in visible spectral range Journal of Crystal Growth. 449: 27-34. DOI: 10.1016/J.Jcrysgro.2016.05.032 |
0.401 |
|
| 2016 |
Huerta-Barberà A, Guia LM, Klymov O, Marín-Borrás V, Martínez-Tomás C, Tamayo-Arriola J, Kurtz A, Bajo MM, Muñoz E, Hierro A, Muñoz-Sanjosé V. MOCVD growth of CdO very thin films: Problems and ways of solution Applied Surface Science. 385: 209-215. DOI: 10.1016/J.Apsusc.2016.05.113 |
0.318 |
|
| 2015 |
Utrilla AD, Ulloa JM, Gačević Ž, Reyes DF, González D, Ben T, Guzmán Á, Hierro A. Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2077151 |
0.491 |
|
| 2015 |
Reyes DF, Ulloa JM, Guzman A, Hierro A, Sales DL, Beanland R, Sanchez AM, González D. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/114006 |
0.414 |
|
| 2015 |
Lopez-Ponce M, Hierro A, Marín-Borrás V, Tabares G, Kurtz A, Albert S, Agouram S, Muñoz-Sanjosé V, Muñoz E, Ulloa JM. Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105026 |
0.411 |
|
| 2015 |
Llorens JM, Wewior L, Cardozo De Oliveira ER, Ulloa JM, Utrilla AD, Guzmán A, Hierro A, Alén B. Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology Applied Physics Letters. 107. DOI: 10.1063/1.4934841 |
0.412 |
|
| 2015 |
Guzmán Á, Yamamoto K, Ulloa JM, Llorens JM, Hierro A. Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors Applied Physics Letters. 107. DOI: 10.1063/1.4926364 |
0.38 |
|
| 2015 |
Perkins J, Foster GM, Myer M, Mehra S, Chauveau JM, Hierro A, Redondo-Cubero A, Windl W, Brillson LJ. Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56) Apl Materials. 3. DOI: 10.1063/1.4915491 |
0.381 |
|
| 2015 |
Tabares G, Hierro A, Lopez-Ponce M, Muñoz E, Vinter B, Chauveau JM. Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells Applied Physics Letters. 106. DOI: 10.1063/1.4908183 |
0.376 |
|
| 2015 |
Gonzalez D, Reyes DF, Ben T, Utrilla AD, Guzman A, Hierro A, Ulloa JM. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots Solar Energy Materials and Solar Cells. DOI: 10.1016/J.Solmat.2015.07.015 |
0.457 |
|
| 2014 |
Utrilla AD, Ulloa JM, Guzman A, Hierro A. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer. Nanoscale Research Letters. 9: 36. PMID 24438542 DOI: 10.1186/1556-276X-9-36 |
0.467 |
|
| 2014 |
Ulloa JM, Reyes DF, Utrilla AD, Guzman A, Hierro A, Ben T, González D. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots Journal of Applied Physics. 116. DOI: 10.1063/1.4896963 |
0.424 |
|
| 2014 |
Utrilla AD, Reyes DF, Ulloa JM, González D, Ben T, Guzman A, Hierro A. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics Applied Physics Letters. 105. DOI: 10.1063/1.4891557 |
0.466 |
|
| 2014 |
Kurtz A, Hierro A, Muñoz E, Mohanta SK, Nakamura A, Temmyo J. Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy Applied Physics Letters. 104. DOI: 10.1063/1.4866662 |
0.484 |
|
| 2013 |
Utrilla AD, Ulloa JM, Guzman A, Hierro A. Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers Applied Physics Letters. 103. DOI: 10.1063/1.4821071 |
0.414 |
|
| 2013 |
Lopez-Ponce M, Hierro A, Ulloa JM, Lefebvre P, Muñoz E, Agouram S, Muñoz-Sanjosé V, Yamamoto K, Nakamura A, Temmyo J. Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing Applied Physics Letters. 102. DOI: 10.1063/1.4799491 |
0.311 |
|
| 2013 |
Achary SR, Agouram S, Sánchez-Royo JF, Lopez-Ponce M, Ulloa JM, Muñoz E, Hierro A, Muñoz-Sanjosé V. Self-assembled Mg<inf>x</inf>Zn<inf>1-x</inf>O quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology Crystengcomm. 15: 182-191. DOI: 10.1039/C2Ce26253C |
0.414 |
|
| 2013 |
Mohanta SK, Nakamura A, Tabares G, Hierro A, Guzmán A, Muñoz E, Temmyo J. Electrical characterization of Schottky contacts to n-MgZnO films Thin Solid Films. 548: 539-545. DOI: 10.1016/J.Tsf.2013.09.007 |
0.39 |
|
| 2012 |
Reyes DF, González D, Ulloa JM, Sales DL, Dominguez L, Mayoral A, Hierro A. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots. Nanoscale Research Letters. 7: 653. PMID 23181950 DOI: 10.1186/1556-276X-7-653 |
0.477 |
|
| 2012 |
Keizer JG, Koenraad PM, Smereka P, Ulloa JM, Guzman A, Hierro A. Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.155326 |
0.338 |
|
| 2012 |
Gür E, Tabares G, Arehart A, Chauveau JM, Hierro A, Ringel SA. Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4769874 |
0.716 |
|
| 2012 |
Ulloa JM, Llorens JM, Del Moral M, Bozkurt M, Koenraad PM, Hierro A. Analysis of the modified optical properties and band structure of GaAs 1-xSb x-capped InAs/GaAs quantum dots Journal of Applied Physics. 112. DOI: 10.1063/1.4755794 |
0.364 |
|
| 2012 |
Gargallo-Caballero R, Guzmn A, Ulloa JM, Hierro A, Hopkinson M, Luna E, Trampert A. Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots Journal of Applied Physics. 111. DOI: 10.1063/1.4706559 |
0.338 |
|
| 2012 |
Ulloa JM, Reyes DF, Montes M, Yamamoto K, Sales DL, González D, Guzman A, Hierro A. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer Applied Physics Letters. 100. DOI: 10.1063/1.3673563 |
0.479 |
|
| 2011 |
Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates for near infrared applications. Optics Express. 19: 7280-8. PMID 21503039 DOI: 10.1364/Oe.19.007280 |
0.692 |
|
| 2011 |
Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In020Ga0. 80As p-i-n photodetectors grown on GaAs substrates for near infrared applications Optics Express. 19: 7280-7288. DOI: 10.1364/OE.19.007280 |
0.645 |
|
| 2011 |
Ulloa JM, Del Moral M, Montes M, Bozkurt M, Koenraad PM, Guzmán A, Hierro A. Size, strain and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 μm emitters Proceedings of Spie - the International Society For Optical Engineering. 7947. DOI: 10.1117/12.875014 |
0.401 |
|
| 2011 |
Yamamoto K, Nakamura A, Temmyo J, Muñoz E, Hierro A. Green electroluminescence from ZnCdO multiple quantum-well light-emitting diodes grown by remote-plasma-enhanced metal-organic chemical vapor deposition Ieee Photonics Technology Letters. 23: 1052-1054. DOI: 10.1109/Lpt.2011.2152389 |
0.377 |
|
| 2011 |
Reyes DF, Sales DL, Gargallo-Caballero R, Ulloa JM, Hierro A, Guzmán A, García R, González D. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots Journal of Physics: Conference Series. 326. DOI: 10.1088/1742-6596/326/1/012049 |
0.361 |
|
| 2011 |
Reyes DF, González D, Sales DL, Gargallo-Caballero R, Guzmán A, Ulloa JM, Hierro A. Inhibition of in desorption in diluted nitride InAsN quantum dots Applied Physics Letters. 98. DOI: 10.1063/1.3554386 |
0.426 |
|
| 2011 |
Milla MJ, Guzmán A, Gargallo-Caballero R, Ulloa JM, Hierro A. Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 μm with low optical degradation Journal of Crystal Growth. 323: 215-218. DOI: 10.1016/j.jcrysgro.2010.12.045 |
0.367 |
|
| 2010 |
Montes Bajo M, Hierro A, Ulloa JM, Miguel-Sánchez J, Guzmán A, Damilano B, Hugues M, Al Khalfioui M, Duboz JY, Massies J. Current spreading efficiency and fermi level pinning in GaInNAs-GaAs quantum-well laser diodes Ieee Journal of Quantum Electronics. 46: 1058-1065. DOI: 10.1109/JQE.2010.2043219 |
0.351 |
|
| 2010 |
Ulloa JM, Gargallo-Caballero R, Bozkurt M, Del Moral M, Guzmán A, Koenraad PM, Hierro A. GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.165305 |
0.349 |
|
| 2010 |
Montes M, Hierro A, Ulloa JM, Guzmán A, Al Khalfioui M, Hugues M, Damilano B, Massies J. External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes Journal of Applied Physics. 108. DOI: 10.1063/1.3467004 |
0.373 |
|
| 2010 |
Montes M, Guzmán A, Trampert A, Hierro A. 1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs Solid-State Electronics. 54: 492-496. DOI: 10.1016/J.Sse.2009.11.007 |
0.433 |
|
| 2010 |
Nakamura A, Hayashi T, Hierro A, Tabares G, Ulloa JM, Muñoz E, Temmyo J. Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD Physica Status Solidi (B) Basic Research. 247: 1472-1475. DOI: 10.1002/Pssb.200983227 |
0.344 |
|
| 2009 |
Hierro A, Tabares G, Ulloa JM, Muoz E, Nakamura A, Hayashi T, Temmyo J. Carrier compensation by deep levels in Zn1-x Mgx O /sapphire Applied Physics Letters. 94. DOI: 10.1063/1.3149699 |
0.426 |
|
| 2009 |
Gargallo-Caballero R, Guzmán A, Hopkinson M, Ulloa JM, Hierro A, Calleja E. Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1441-1444. DOI: 10.1002/Pssc.200881524 |
0.459 |
|
| 2009 |
Montes M, Hierro A, Ulloa JM, Guzmán A, Khalfioui MA, Hugues M, Damilano B, Massies J. Electroluminescence analysis of 1.3-1.5 μm InAs quantum dot LEDs with (Ga, In)(N, As) capping layers Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1424-1427. DOI: 10.1002/Pssc.200881521 |
0.477 |
|
| 2008 |
Teweldeberhan AM, Stenuit G, Fahy S, Gallardo E, Lazić S, Calleja JM, Miguel-Sánchez J, Montes M, Hierro A, Gargallo-Caballero R, Guzmán A, Muñoz E. Resonant Raman-active localized vibrational modes in Aly Ga1-y Nx As1-x alloys: Experiment and first-principles calculations Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.155208 |
0.322 |
|
| 2008 |
Gargallo-Caballero R, Miguel-Sánchez J, Guzmán A, Hierro A, Mũoz E. The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/6/065413 |
0.443 |
|
| 2008 |
Montes M, Hierro A, Ulloa JM, Guzmán A, Damilano B, Hugues M, Al Khalfioui M, Duboz JY, Massies J. Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/15/155102 |
0.391 |
|
| 2008 |
Gallardo E, Lazić S, Calleja JM, Miguel-Sánchez J, Montes M, Hierro A, Gargallo-Caballero R, Guzmán A, Muñoz E, Teweldeberhan AM, Fahy S. Resonant Raman study of local vibration modes in AlGaAsN layers Physica E: Low-Dimensional Systems and Nanostructures. 40: 2084-2086. DOI: 10.1016/J.Physe.2007.09.117 |
0.387 |
|
| 2008 |
Gargallo-Caballero R, Guzmán A, Miguel-Sánchez J, Hierro A, Muñoz E. The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 147: 118-123. DOI: 10.1016/J.Mseb.2007.09.087 |
0.414 |
|
| 2008 |
Gallardo E, Lazić S, Calleja JM, Miguel-Sánchez J, Montes M, Hierro A, Gargallo-Caballero R, Guzmán A, Muñoz E, Teweldeberhan AM, Fahy S. Local vibration modes and nitrogen incorporation in AlGaAs:N layers Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2345-2348. DOI: 10.1002/Pssc.200778487 |
0.436 |
|
| 2006 |
Ulloa JM, Hierro A, Miguel-Śnchez J, Guzḿn A, Chauveau JM, Trampert A, Tournié E, Calleja E. Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes Semiconductor Science and Technology. 21: 1047-1052. DOI: 10.1088/0268-1242/21/8/011 |
0.426 |
|
| 2006 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Montes M, Hierro A, Muñoz E. MBE growth and processing of diluted nitride quantum well lasers on GaAs (1 1 1)B Microelectronics Journal. 37: 1442-1445. DOI: 10.1016/J.Mejo.2006.05.005 |
0.406 |
|
| 2005 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Hierro A, Muñoz E. Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs Proceedings of Spie - the International Society For Optical Engineering. 5840: 766-773. DOI: 10.1117/12.608415 |
0.356 |
|
| 2005 |
Hierro A, Ulloa JM, Montes M, Damilano B, Barjon J, Hugues M, Duboz JY, Massies J. Analysis of the room temperature performance of 1.3-1.52 μm GaInNAs/GaAs LDs grown by MBE Proceedings of Spie - the International Society For Optical Engineering. 5840: 72-80. DOI: 10.1117/12.608368 |
0.354 |
|
| 2005 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Montes M, Hierro A, Muñoz E. Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B Ieee Photonics Technology Letters. 17: 2271-2273. DOI: 10.1109/Lpt.2005.857609 |
0.419 |
|
| 2005 |
Hierro A, Ulloa JM, Calleja E, Damilano B, Barjon J, Duboz JY, Massies J. Room temperature performance of low threshold 1.34-1.44-μm GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy Ieee Photonics Technology Letters. 17: 1142-1144. DOI: 10.1109/Lpt.2005.846567 |
0.416 |
|
| 2005 |
Ulloa JM, Hierro A, Montes M, Damilano B, Hugues M, Barjon J, Duboz JY, Massies J. Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers emitting from 1.29 to 1.52 μm Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2151249 |
0.466 |
|
| 2005 |
Damilano B, Barjon J, Duboz JY, Massies J, Hierro A, Ulloa JM, Calleja E. Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1863433 |
0.34 |
|
| 2005 |
Hugues M, Damilano B, Barjon J, Duboz JY, Massies J, Ulloa JM, Montes M, Hierro A. Performance improvement of 1.52 μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates Electronics Letters. 41: 595-596. DOI: 10.1049/El:20050487 |
0.427 |
|
| 2005 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Hierro A, Muñoz E. InGaAsN on GaAs (1 1 1)B for telecommunication laser application Journal of Crystal Growth. 278: 234-238. DOI: 10.1016/J.Jcrysgro.2004.12.068 |
0.367 |
|
| 2004 |
Ulloa JM, Hierro A, Miguel-Sánchez J, Guzmán A, Tournié E, Sánchez-Rojas JL, Calleja E. Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes Applied Physics Letters. 85: 40-42. DOI: 10.1063/1.1769078 |
0.446 |
|
| 2004 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Hierro A, Muñoz E. Effect of nitrogen on the optical properties of ingaasn p-i-n structures grown on misoriented (111)B GaAs substrates Applied Physics Letters. 84: 2524-2526. DOI: 10.1063/1.1695639 |
0.445 |
|
| 2004 |
Miguel-Sánchez J, Guzmán A, Ulloa JM, Hierro A, Muñoz E. Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (1 1 1) B GaAs Physica E: Low-Dimensional Systems and Nanostructures. 23: 356-361. DOI: 10.1016/J.Physe.2003.11.282 |
0.43 |
|
| 2004 |
Miguel-Sánchez J, Hopkinson M, Gutiérrez M, Navaretti P, Liu HY, Guzmán A, Ulloa JM, Hierro A, Muñoz E. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (1 1 1)b substrates by molecular beam epitaxy Journal of Crystal Growth. 270: 62-68. DOI: 10.1016/J.Jcrysgro.2004.06.022 |
0.461 |
|
| 2003 |
Ulloa JM, Sánchez-Rojas JL, Hierro A, Tijero JMG, Tournié E. Effect of Nitrogen on the Band Structure and Material Gain of In yGa1-yAs1-xNx-GaAs Quantum Wells Ieee Journal On Selected Topics in Quantum Electronics. 9: 716-722. DOI: 10.1109/JSTQE.2003.818860 |
0.393 |
|
| 2003 |
Hierro A, Ulloa JM, Chauveau JM, Trampert A, Pinault MA, Tournié E, Guzmán A, Sánchez-Rojas JL, Calleja E. Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy Journal of Applied Physics. 94: 2319-2324. DOI: 10.1063/1.1591416 |
0.365 |
|
| 2002 |
Hierro A, Arehart AR, Heying B, Hansen M, Mishra UK, Denbaars SP, Speck JS, Ringel SA. Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 80: 805-807. DOI: 10.1063/1.1445274 |
0.728 |
|
| 2001 |
Hierro A, Hansen M, Boeckl JJ, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN Physica Status Solidi (B) Basic Research. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T |
0.734 |
|
| 2001 |
Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture kinetics of electron traps in MBE-grown n-GaN Physica Status Solidi (B) Basic Research. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N |
0.714 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy Journal of Applied Physics. 87: 730-738. DOI: 10.1063/1.371933 |
0.603 |
|
| 2000 |
Hierro A, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Hydrogen passivation of deep levels in n–GaN Applied Physics Letters. 77: 1499-1501. DOI: 10.1063/1.1290042 |
0.586 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes Applied Physics Letters. 76: 3064-3066. DOI: 10.1063/1.126580 |
0.665 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, DenBaars SP, Speck JS. Deep levels in n-type Schottky and p +-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5. |
0.609 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, Denbaars SP, Speck JS. Deep levels in n-type Schottky and p+-n homojunction GaN diodes Materials Research Society Symposium - Proceedings. 595. |
0.618 |
|
| 2000 |
Hierro A, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Hydrogen passivation of deep levels in n-GaN Applied Physics Letters. 77: 1499-1501. |
0.581 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes Applied Physics Letters. 76: 3064-3066. |
0.633 |
|
| 1999 |
Hierro A, Kwon D, Goss SH, Brillson LJ, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy Applied Physics Letters. 75: 832-834. DOI: 10.1063/1.124528 |
0.66 |
|
| 1999 |
Hierro A, Kwon D, Ringel' SA, Brillson LJ, Young AP, Franciosi A. Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs Materials Research Society Symposium - Proceedings. 535: 77-82. |
0.408 |
|
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