| Year |
Citation |
Score |
| 2022 |
Gallagher JC, Ebrish MA, Porter MA, Jacobs AG, Gunning BP, Kaplar RJ, Hobart KD, Anderson TJ. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques. Scientific Reports. 12: 658. PMID 35027582 DOI: 10.1038/s41598-021-04170-2 |
0.317 |
|
| 2020 |
Baca AG, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Kaplar RJ. Al-rich AlGaN based transistors Journal of Vacuum Science and Technology. 38: 20803. DOI: 10.1116/1.5129803 |
0.404 |
|
| 2020 |
Lundh JS, Song Y, Chatterjee B, Baca AG, Kaplar RJ, Armstrong AM, Allerman AA, Klein BA, Kendig D, Kim H, Choi S. Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics Journal of Electronic Packaging. 142: 31113. DOI: 10.1115/1.4047100 |
0.386 |
|
| 2020 |
Ebrish MA, Anderson TJ, Koehler AD, Foster GM, Gallagher JC, Kaplar RJ, Gunning BP, Hobart KD. A study on the impact of mid-gap defects on vertical GaN diodes Ieee Transactions On Semiconductor Manufacturing. 1-1. DOI: 10.1109/Tsm.2020.3019212 |
0.38 |
|
| 2020 |
Chatterjee B, Lundh JS, Song Y, Shoemaker D, Baca AG, Kaplar RJ, Beechem TE, Saltonstall C, Allerman AA, Armstrong AM, Klein BA, Bansal A, Seyf HR, Talreja D, Pogrebnyakov A, et al. Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs Ieee Electron Device Letters. 41: 461-464. DOI: 10.1109/Led.2020.2969515 |
0.391 |
|
| 2020 |
Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar RJ, Ding D, Mantooth HA, Yu S, Chen Z. Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 845-853. DOI: 10.1109/Jestpe.2018.2882775 |
0.358 |
|
| 2019 |
Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar R, Ding D, Mantooth A, Yu SQ, Chen Z. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports. 9: 16758. PMID 31728031 DOI: 10.1038/S41598-019-52126-4 |
0.343 |
|
| 2019 |
Reza S, Klein BA, Baca AG, Armstrong AM, Allerman AA, Douglas EA, Kaplar RJ. High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study Japanese Journal of Applied Physics. 58: SCCD04. DOI: 10.7567/1347-4065/Ab07A5 |
0.391 |
|
| 2019 |
Madhusoodhanan S, Sabbar A, Al-Kabi S, Atcitty S, Kaplar R, Dong B, Wang J, Yu S, Chen Z. High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application Advances in Science, Technology and Engineering Systems Journal. 4: 17-22. DOI: 10.25046/Aj040203 |
0.35 |
|
| 2019 |
Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074 |
0.474 |
|
| 2019 |
Martinez MJ, King MP, Baca AG, Allerman AA, Armstrong AA, Klein BA, Douglas EA, Kaplar RJ, Swanson SE. Radiation Response of AlGaN-Channel HEMTs Ieee Transactions On Nuclear Science. 66: 344-351. DOI: 10.1109/Tns.2018.2885526 |
0.37 |
|
| 2019 |
Baca AG, Klein BA, Wendt JR, Lepkowski SM, Nordquist CD, Armstrong AM, Allerman AA, Douglas EA, Kaplar RJ. RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates Ieee Electron Device Letters. 40: 17-20. DOI: 10.1109/Led.2018.2880429 |
0.403 |
|
| 2019 |
Madhusoodhanan S, Sabbar A, Atcitty S, Kaplar R, Mantooth A, Yu S, Chen Z. High-Temperature Analysis of GaN-based Blue LEDs for Future Power Electronic Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2019.2945166 |
0.389 |
|
| 2019 |
Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors Ieee Journal of the Electron Devices Society. 7: 444-452. DOI: 10.1109/Jeds.2019.2907306 |
0.428 |
|
| 2019 |
Lundh JS, Chatterjee B, Song Y, Baca AG, Kaplar RJ, Beechem TE, Allerman AA, Armstrong AM, Klein BA, Bansal A, Talreja D, Pogrebnyakov A, Heller E, Gopalan V, Redwing JM, et al. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters. 115: 153503. DOI: 10.1063/1.5115013 |
0.422 |
|
| 2019 |
Klein BA, Baca AG, Lepkowski SM, Nordquist CD, Wendt JR, Allerman AA, Armstrong AM, Douglas EA, Abate VM, Kaplar RJ. Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors Journal of Electronic Materials. 48: 5581-5585. DOI: 10.1007/S11664-019-07421-1 |
0.426 |
|
| 2019 |
Madhusoodhanan S, Sabbar A, Atcitty S, Kaplar R, Mantooth A, Yu S, Chen Z. High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules Physica Status Solidi (a). 217: 1900792. DOI: 10.1002/Pssa.201900792 |
0.309 |
|
| 2018 |
Slobodyan O, Smith T, Flicker J, Sandoval S, Matthews C, van Heukelom M, Kaplar R, Atcitty S. Hard-switching reliability studies of 1200 V vertical GaN PiN diodes Mrs Communications. 8: 1413-1417. DOI: 10.1557/Mrc.2018.204 |
0.318 |
|
| 2018 |
Veliadis V, Kaplar R, Zhang J, Bakowski M, Khalil S, Moens P. IEEE ITRW Working Group Position Paper-Materials and Devices: WBG and UWBG Materials and Devices Are Examined in a New Working Group Ieee Power Electronics Magazine. 5: 45-48. DOI: 10.1109/Mpel.2018.2823198 |
0.317 |
|
| 2018 |
Butler PA, Waller WM, Uren MJ, Allerman A, Armstrong A, Kaplar R, Kuball M. Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices Ieee Electron Device Letters. 39: 55-58. DOI: 10.1109/Led.2017.2771148 |
0.432 |
|
| 2017 |
Coltrin ME, Baca AG, Kaplar RJ. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0241711Jss |
0.309 |
|
| 2017 |
Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Stephenson CA, Fortune TR, Kaplar RJ. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature Ecs Journal of Solid State Science and Technology. 6: Q161-Q165. DOI: 10.1149/2.0231712Jss |
0.386 |
|
| 2017 |
Kaplar RJ, Allerman AA, Armstrong AM, Crawford MH, Dickerson JR, Fischer AJ, Baca AG, Douglas EA. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0111702Jss |
0.375 |
|
| 2017 |
Douglas EA, Sanchez CA, Kaplar RJ, Allerman AA, Baca AG. Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN Journal of Vacuum Science and Technology. 35: 21305. DOI: 10.1116/1.4971245 |
0.344 |
|
| 2017 |
Mauch DL, Zutavern FJ, Delhotal JJ, King MP, Neely JC, Kizilyalli IC, Kaplar RJ. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes Ieee Transactions On Power Electronics. 32: 9333-9341. DOI: 10.1109/Tpel.2017.2657491 |
0.337 |
|
| 2017 |
Tierney BD, Choi S, DasGupta S, Dickerson JR, Reza S, Kaplar RJ, Baca AG, Marinella MJ. Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime Ieee Transactions On Electron Devices. 64: 3740-3747. DOI: 10.1109/Ted.2017.2729544 |
0.348 |
|
| 2017 |
Wierer JJ, Dickerson JR, Allerman AA, Armstrong AM, Crawford MH, Kaplar RJ. Simulations of Junction Termination Extensions in Vertical GaN Power Diodes Ieee Transactions On Electron Devices. 64: 2291-2297. DOI: 10.1109/Ted.2017.2684093 |
0.413 |
|
| 2017 |
Kaplar RJ, Neely JC, Huber DL, Rashkin LJ. Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials Ieee Power Electronics Magazine. 4: 36-42. DOI: 10.1109/Mpel.2016.2643098 |
0.388 |
|
| 2017 |
Collins KC, King MP, Dickerson JR, Vizkelethy G, Armstrong AM, Fischer AJ, Allerman AA, Kaplar RJ, Aktas O, Kizilyalli IC, Talin AA, Leonard F. Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes Ieee Electron Device Letters. 38: 945-948. DOI: 10.1109/Led.2017.2708703 |
0.4 |
|
| 2017 |
Coltrin ME, Kaplar RJ. Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices Journal of Applied Physics. 121: 55706. DOI: 10.1063/1.4975346 |
0.359 |
|
| 2017 |
Vizkelethy G, King MP, Aktas O, Kizilyalli IC, Kaplar RJ. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 404: 264-268. DOI: 10.1016/J.Nimb.2016.11.031 |
0.372 |
|
| 2017 |
Douglas EA, Reza S, Sanchez C, Koleske D, Allerman A, Klein B, Armstrong AM, Kaplar RJ, Baca AG. Ohmic contacts to Al-rich AlGaN heterostructures Physica Status Solidi (a). 214: 1600842. DOI: 10.1002/Pssa.201600842 |
0.354 |
|
| 2016 |
Leonard F, Dickerson JR, King MP, Armstrong AM, Fischer AJ, Allerman AA, Kaplar RJ, Talin AA. In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes Ieee Electron Device Letters. 37: 766-769. DOI: 10.1109/Led.2016.2561838 |
0.395 |
|
| 2016 |
King MP, Kaplar RJ, Dickerson JR, Lee SR, Allerman AA, Crawford MH, Fischer AJ, Marinella MJ, Flicker JD, Fleming RM, Kizilyalli IC, Aktas O, Armstrong AM. Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes Applied Physics Letters. 109: 183503. DOI: 10.1063/1.4966903 |
0.503 |
|
| 2016 |
Baca AG, Armstrong AM, Allerman AA, Douglas EA, Sanchez CA, King MP, Coltrin ME, Fortune TR, Kaplar RJ. An AlN/Al0.85Ga0.15N high electron mobility transistor Applied Physics Letters. 109. DOI: 10.1063/1.4959179 |
0.479 |
|
| 2016 |
Allerman AA, Armstrong AM, Fischer AJ, Dickerson JR, Crawford MH, King MP, Moseley MW, Wierer JJ, Kaplar RJ. Al0.3Ga0.7N PN diode with breakdown voltage >1600 v Electronics Letters. 52: 1319-1321. DOI: 10.1049/El.2016.1280 |
0.467 |
|
| 2016 |
Armstrong AM, Allerman AA, Fischer AJ, King MP, Van Heukelom MS, Moseley MW, Kaplar RJ, Wierer JJ, Crawford MH, Dickerson JR. High voltage and high current density vertical GaN power diodes Electronics Letters. 52: 1170-1171. DOI: 10.1049/El.2016.1156 |
0.432 |
|
| 2015 |
King MP, Armstrong AM, Dickerson JR, Vizkelethy G, Fleming RM, Campbell J, Wampler WR, Kizilyalli IC, Bour DP, Aktas O, Nie H, Disney D, Wierer J, Allerman AA, Moseley MW, ... ... Kaplar RJ, et al. Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2480071 |
0.428 |
|
| 2015 |
Dickerson JR, Allerman AA, Bryant BN, Fischer AJ, King MP, Moseley MW, Armstrong AM, Kaplar RJ, Kizilyalli IC, Aktas O, Wierer JJ. Vertical GaN Power Diodes With a Bilayer Edge Termination Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2502186 |
0.449 |
|
| 2015 |
King MP, Dickerson JR, DasGupta S, Marinella MJ, Kaplar RJ, Piedra D, Sun M, Palacios T. Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks Ieee International Reliability Physics Symposium Proceedings. 2015: 2E51-2E58. DOI: 10.1109/IRPS.2015.7112689 |
0.312 |
|
| 2015 |
Kao WC, Goryll M, Marinella M, Kaplar RJ, Jiao C, Dhar S, Cooper JA, Schroder DK. Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075011 |
0.329 |
|
| 2015 |
Paisley EA, Brumbach M, Allerman AA, Atcitty S, Baca AG, Armstrong AM, Kaplar RJ, Ihlefeld JF. Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content Applied Physics Letters. 107. DOI: 10.1063/1.4930309 |
0.332 |
|
| 2014 |
Flicker JD, Hughart DR, Atcitty S, Kaplar RJ, Marinella MJ. Progress in SiC MOSFET reliability Ecs Transactions. 64: 87-98. DOI: 10.1149/06407.0087ecst |
0.313 |
|
| 2014 |
Kaplar RJ, Dickerson J, Dasgupta S, Atcitty S, Marinella MJ, Khalil SG, Zehnder D, Garrido A. Impact of gate stack on the stability of normally-Off AlGaN/GaN power switching HEMTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 209-212. DOI: 10.1109/ISPSD.2014.6856013 |
0.345 |
|
| 2014 |
Flicker J, Kaplar R, Yang B, Marinella M, Granata J. Insulated gate bipolar transistor reliability testing protocol for PV inverter applications Progress in Photovoltaics: Research and Applications. 22: 970-983. DOI: 10.1002/Pip.2351 |
0.305 |
|
| 2013 |
Dasgupta S, Kaplar RJ, Atcitty S, Marinella MJ. Photocapacitance decay technique for interface trap characterization near inversion band in wide bandgap MOS capacitors Ieee Transactions On Electron Devices. 60: 2619-2625. DOI: 10.1109/Ted.2013.2270287 |
0.459 |
|
| 2013 |
Dasgupta S, Biedermann L, Sun M, Kaplar RJ, Marinella MJ, Zavadil K, Atcitty S, Palacios T. Influence of barrier design on current collapse in high voltage AlGaN/GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2013.6531986 |
0.314 |
|
| 2012 |
DasGupta S, Armstrong A, Kaplar R, Marinella M, Brock R, Smith M, Atcitty S. Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors Materials Science Forum. 441-444. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.441 |
0.415 |
|
| 2012 |
DasGupta S, Sun M, Armstrong A, Kaplar R, Marinella M, Stanley J, Smith M, Atcitty S, Palacios T. Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs Mrs Proceedings. 1432. DOI: 10.1557/Opl.2012.909 |
0.423 |
|
| 2012 |
Dasgupta S, Sun M, Armstrong A, Kaplar RJ, Marinella MJ, Stanley JB, Atcitty S, Palacios T. Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 59: 2115-2122. DOI: 10.1109/Ted.2012.2198652 |
0.447 |
|
| 2012 |
DasGupta S, Kaplar RJ, Marinella MJ, Smith MA, Atcitty S. Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2012.6241817 |
0.324 |
|
| 2012 |
Dasgupta S, Biedermann LB, Sun M, Kaplar R, Marinella M, Zavadil KR, Atcitty S, Palacios T. Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 101. DOI: 10.1063/1.4772503 |
0.448 |
|
| 2011 |
Kaplar RJ, Habermehl SD, Apodaca RT, Havener B, Roherty-Osmun E. TDDB and pulse-breakdown studies of Si-rich SiNx antifuses and antifuse-based ROMs Ieee Transactions On Electron Devices. 58: 224-228. DOI: 10.1109/Ted.2010.2089057 |
0.348 |
|
| 2011 |
DasGupta S, Armstrong A, Kaplar R, Marinella M, Brock R, Smith M, Atcitty S. Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC Metal Oxide Semiconductor capacitors. Applied Physics Letters. 99: 173502. DOI: 10.1063/1.3655334 |
0.41 |
|
| 2011 |
DasGupta S, Brock R, Kaplar R, Marinella M, Smith M, Atcitty S. Extraction of trapped charge in 4H-SiC metal oxide semiconductor field effect transistors from subthreshold characteristics Applied Physics Letters. 99: 023503. DOI: 10.1063/1.3611029 |
0.375 |
|
| 2011 |
Mee JK, Devine RAB, Trombetta L, Kaplar RJ, Gouker P. Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors Microelectronics Reliability. 51: 1113-1117. DOI: 10.1016/J.Microrel.2011.02.003 |
0.314 |
|
| 2009 |
Habermehl S, Apodaca RT, Kaplar RJ. On dielectric breakdown in silicon-rich silicon nitride thin films Applied Physics Letters. 94. DOI: 10.1063/1.3065477 |
0.377 |
|
| 2008 |
Weiss JD, Kaplar RJ, Kambour KE. A derivation of the van der Pauw formula from electrostatics Solid-State Electronics. 52: 91-98. DOI: 10.1016/J.Sse.2007.07.029 |
0.326 |
|
| 2005 |
Kaplar RJ, Kurtz SR, Koleske DD, Allerman AA, Fischer AJ, Crawford MH. Characterization of minority-carrier hole transport in nitride-based light-emitting diodes with optical and electrical time-resolved techniques Materials Research Society Symposium Proceedings. 831: 587-592. DOI: 10.1557/Proc-831-E10.9 |
0.417 |
|
| 2005 |
Crawford MH, Allerman AA, Fischer AJ, Bogart KHA, Lee SR, Chow WW, Wieczorek S, Kaplar RJ, Kurtz SR. Advances in AlGaN-based Deep UV LEDs Materials Research Society Symposium Proceedings. 831: 545-556. DOI: 10.1557/Proc-831-E10.1 |
0.416 |
|
| 2005 |
Kaplar RJ, Kurtz SR, Koleske DD. Novel optical probes of InGaN/GaN light-emitting diodes: 1. Electroreflectance stark spectroscopy, and 2. Time-resolved emission Physica Status Solidi C: Conferences. 2: 2866-2870. DOI: 10.1002/Pssc.200461356 |
0.402 |
|
| 2004 |
Kaplar RJ, Kurtz SR, Koleske DD, Fischer AJ. Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells Journal of Applied Physics. 95: 4905-4913. DOI: 10.1063/1.1690100 |
0.302 |
|
| 2002 |
Kaplar RJ, Ringel SA, Kurtz SR, Klem JF, Allerman AA. Deep-level defects in InGaAsN grown by molecular-beam epitaxy Applied Physics Letters. 80: 4777-4779. DOI: 10.1063/1.1483912 |
0.587 |
|
| 2002 |
Kaplar RJ, Ringel SA, Kurtz SR, Allerman AA, Klem JF. Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN Materials Research Society Symposium - Proceedings. 719: 403-408. |
0.596 |
|
| 2001 |
Kaplar RJ, Arehart AR, Ringel SA, Allerman AA, Sieg RM, Kurtz SR. Deep levels and their impact on generation current in Sn-doped InGaAsN Journal of Applied Physics. 90: 3405-3408. DOI: 10.1063/1.1396832 |
0.692 |
|
| 2001 |
Kaplar RJ, Kwon D, Ringel SA, Allerman AA, Kurtz SR, Jones ED, Sieg RM. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells Solar Energy Materials and Solar Cells. 69: 85-91. DOI: 10.1016/S0927-0248(00)00380-9 |
0.554 |
|
| 1999 |
Kwon D, Kaplar RJ, Boeckl JJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep level defect studies in MOCVD-grown InxGa1-xAs1-yNy films lattice-matched to GaAs Materials Research Society Symposium - Proceedings. 535: 59-64. DOI: 10.1557/Proc-535-59 |
0.68 |
|
| 1999 |
Kwon D, Kaplar RJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep levels in p-type InGaAsN lattice matched to GaAs Applied Physics Letters. 74: 2830-2832. DOI: 10.1063/1.124028 |
0.573 |
|
| Show low-probability matches. |