Year |
Citation |
Score |
2019 |
Amjadipour M, MacLeod J, Lipton-Duffin J, Tadich A, Boeckl JJ, Iacopi F, Motta N. Electron effective attenuation length in epitaxial graphene on SiC. Nanotechnology. 30: 025704. PMID 30382023 DOI: 10.1088/1361-6528/Aae7Ec |
0.367 |
|
2019 |
Mishra N, Bosi M, Rossi F, Salviati G, Boeckl J, Iacopi F. Growth of graphitic carbon layers around silicon carbide nanowires Journal of Applied Physics. 126: 65304. DOI: 10.1063/1.5098987 |
0.355 |
|
2018 |
Amjadipour M, Tadich A, Boeckl JJ, Lipton-Duffin J, MacLeod J, Iacopi F, Motta N. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111). Nanotechnology. 29: 145601. PMID 29376834 DOI: 10.1088/1361-6528/Aaab1A |
0.493 |
|
2017 |
Ahmed M, Wang B, Gupta B, Boeckl JJ, Motta N, Iacopi F. On-silicon supercapacitors with enhanced storage performance Journal of the Electrochemical Society. 164. DOI: 10.1149/2.0671704Jes |
0.346 |
|
2017 |
Mishra N, Boeckl JJ, Tadich A, Jones RT, Pigram PJ, Edmonds M, Fuhrer MS, Nichols BM, Iacopi F. Solid source growth of graphene with Ni–Cu catalysts: towards high quality in situ graphene on silicon Journal of Physics D. 50: 95302. DOI: 10.1088/1361-6463/Aa560B |
0.418 |
|
2017 |
Leedy KD, Chabak KD, Vasilyev V, Look DC, Boeckl JJ, Brown JL, Tetlak SE, Green AJ, Moser NA, Crespo A, Thomson DB, Fitch RC, McCandless JP, Jessen GH. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Applied Physics Letters. 111: 012103. DOI: 10.1063/1.4991363 |
0.442 |
|
2017 |
Park J, Back T, Fairchild SB, Mitchel WC, Elhamri S, Boeckl J, Martinotti D, Douillard L, Soukiassian P. Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure Carbon. 116: 303-309. DOI: 10.1016/J.Carbon.2017.01.072 |
0.433 |
|
2016 |
Pradeepkumar A, Mishra N, Kermany AR, Boeckl JJ, Hellerstedt J, Fuhrer MS, Iacopi F. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures Applied Physics Letters. 109. DOI: 10.1063/1.4955453 |
0.381 |
|
2016 |
Jiang J, Pachter R, Demeritte T, Ray PC, Islam AE, Maruyama B, Boeckl JJ. Modeling Graphene with Nanoholes: Structure and Characterization by Raman Spectroscopy with Consideration for Electron Transport Journal of Physical Chemistry C. 120: 5371-5383. DOI: 10.1021/Acs.Jpcc.5B10225 |
0.385 |
|
2016 |
Mishra N, Boeckl J, Motta N, Iacopi F. Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9/2016) Physica Status Solidi (a). 213: 2269-2269. DOI: 10.1002/Pssa.201670657 |
0.352 |
|
2016 |
Mishra N, Boeckl J, Motta N, Iacopi F. Graphene growth on silicon carbide: A review Physica Status Solidi (a). 213: 2277-2289. DOI: 10.1002/Pssa.201600091 |
0.384 |
|
2015 |
Ahmed M, Khawaja M, Notarianni M, Wang B, Goding D, Gupta B, Boeckl JJ, Takshi A, Motta N, Saddow SE, Iacopi F. A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors. Nanotechnology. 26: 434005. PMID 26447742 DOI: 10.1088/0957-4484/26/43/434005 |
0.43 |
|
2015 |
Park J, Back T, Mitchel WC, Kim SS, Elhamri S, Boeckl J, Fairchild SB, Naik R, Voevodin AA. Approach to multifunctional device platform with epitaxial graphene on transition metal oxide. Scientific Reports. 5: 14374. PMID 26395160 DOI: 10.1038/Srep14374 |
0.39 |
|
2015 |
Iacopi F, Mishra N, Cunning BV, Goding D, Dimitrijev S, Brock R, Dauskardt RH, Wood B, Boeckl J. A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers Journal of Materials Research. 30: 609-616. DOI: 10.1557/Jmr.2015.3 |
0.415 |
|
2015 |
Bachmatiuk A, Boeckl J, Smith H, Ibrahim I, Gemming T, Oswald S, Kazmierczak W, Makarov D, Schmidt OG, Eckert J, Fu L, Rummeli MH. Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases Journal of Physical Chemistry C. 119: 17965-17970. DOI: 10.1021/Acs.Jpcc.5B05167 |
0.399 |
|
2013 |
Mehmood F, Pachter R, Lu W, Boeckl JJ. Adsorption and diffusion of oxygen on single-layer graphene with topological defects Journal of Physical Chemistry C. 117: 10366-10374. DOI: 10.1021/Jp312159V |
0.329 |
|
2012 |
Lu W, Barbosa R, Clarke E, Eyink K, Grazulis L, Mitchel WC, Boeckl JJ. Interface oxidative structural transitions in graphene growth on SiC (0001) Journal of Physical Chemistry C. 116: 15342-15347. DOI: 10.1021/Jp301996H |
0.406 |
|
2011 |
Mou S, Boeckl JJ, Grazulis L, Claflin B, Lu W, Park JH, Mitchel WC. Comparison of epitaxial graphene on Si-face and C-face 6H-SiC Materials Research Society Symposium Proceedings. 1284: 51-58. DOI: 10.1557/Opl.2011.643 |
0.415 |
|
2011 |
Mitchel WC, Boeckl JJ, Park J. Growth of carbon-based nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884651 |
0.353 |
|
2011 |
Park J, Mitchel WC, Brown GJ, Elhamri S, Grazulis L, Smith HE, Pacley SD, Boeckl JJ, Eyink KG, Mou S, Tomich DH, Hoelscher JE. Band gap formation in graphene by in-situ doping Applied Physics Letters. 98. DOI: 10.1063/1.3589364 |
0.409 |
|
2010 |
Boeckl J, Mitchel WC, Clarke E, Barbosa RL, Lu WJ. Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure Materials Science Forum. 573-576. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.573 |
0.361 |
|
2010 |
Lu W, Boeckl JJ, Mitchel WC. A critical review of growth of low-dimensional carbon nanostructures on SiC (0001): Impact of growth environment Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/37/374004 |
0.388 |
|
2009 |
Kozlowski G, Kleismit R, Boeckl J, Campbell A, Munbodh K, Hopkins S, Koziol K, Peterson T. Electromagnetic characterization of carbon nanotube films by a two-point evanescent microwave method Physica E: Low-Dimensional Systems and Nanostructures. 41: 1539-1544. DOI: 10.1016/J.Physe.2009.04.034 |
0.324 |
|
2009 |
Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/S11664-009-0803-6 |
0.41 |
|
2009 |
Lu W, Mitchel WC, Boeckl JJ, Crenshaw TR, Collins WE, Chang RPH, Feldman LC. Growth of graphene-like structures on an oxidized sic surface Journal of Electronic Materials. 38: 731-736. DOI: 10.1007/S11664-009-0715-5 |
0.406 |
|
2007 |
Harrison J, Sambandam SN, Boeckl JJ, Mitchel WC, Collins WE, Lu W. Evaluation of metal-free carbon nanotubes formed by SiC thermal decomposition Journal of Applied Physics. 101. DOI: 10.1063/1.2732547 |
0.377 |
|
2006 |
Boeckl J, Mitchel WC, Lu WJ, Rigueur J. Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition Materials Science Forum. 1579-1582. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1579 |
0.409 |
|
2006 |
Lu WJ, Boeckl J, Mitchel WC, Rigueur J, Collins WE. Role of oxygen in growth of carbon nanotubes on SiC Materials Science Forum. 1575-1578. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1575 |
0.323 |
|
2006 |
Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068 |
0.676 |
|
2005 |
Andre CL, Carlin JA, Boeckl JJ, Wilt DM, Smith MA, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates Ieee Transactions On Electron Devices. 52: 1055-1060. DOI: 10.1109/Ted.2005.848117 |
0.719 |
|
2005 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539 |
0.715 |
|
2004 |
Look DC, Fang ZQ, Soloviev S, Sudarshan TS, Boeckl JJ. Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.195205 |
0.344 |
|
2004 |
Andre CL, Boeckl JJ, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Keyes BM, Ringel SA. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Applied Physics Letters. 84: 3447-3449. DOI: 10.1063/1.1736318 |
0.734 |
|
2003 |
Mier M, Boeckl J, Roth MD, Balkas CM, Nelson M. Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers Materials Science Forum. 357-360. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.357 |
0.322 |
|
2003 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166. DOI: 10.1557/Proc-799-Z3.4 |
0.684 |
|
2003 |
Andre CL, Boeckl JJ, Leitz CW, Currie MT, Langdo TA, Fitzgerald EA, Ringel SA. Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates Journal of Applied Physics. 94: 4980-4985. DOI: 10.1063/1.1610243 |
0.754 |
|
2002 |
Mier MG, Boeckl JJ, Hill DA, Bertrand SD, Ramakrishnan E, Roth MD, Balkas C, Nelson MP. Whole-wafer optical mapping of defects in insulating silicon carbide wafers Materials Research Society Symposium - Proceedings. 742: 127-130. DOI: 10.1557/Proc-742-K2.16 |
0.372 |
|
2001 |
Hierro A, Hansen M, Boeckl JJ, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN Physica Status Solidi (B) Basic Research. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T |
0.685 |
|
1999 |
Kwon D, Kaplar RJ, Boeckl JJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep level defect studies in MOCVD-grown InxGa1-xAs1-yNy films lattice-matched to GaAs Materials Research Society Symposium - Proceedings. 535: 59-64. DOI: 10.1557/Proc-535-59 |
0.709 |
|
1999 |
Xu Q, Hsu JWP, Carlin JA, Sieg RM, Boeckl JJ, Ringel SA. Topographic and electronic studies of wedge-shape surface defects on AiGaAs/GaAs films grown on ge substrates Applied Physics Letters. 75: 2111-2113. DOI: 10.1063/1.124933 |
0.701 |
|
1998 |
Sieg RM, Carlin JA, Boeckl JJ, Ringel SA, Currie MT, Ting SM, Langdo TA, Taraschi G, Fitzgerald EA, Keyes BM. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates Applied Physics Letters. 73: 3111-3113. DOI: 10.1063/1.122689 |
0.743 |
|
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