| Year |
Citation |
Score |
| 2013 |
Johnson-Steigelman HT, Parihar SS, King ST, Lyman PF. Ag as a surfactant for Co/MgO(111)-(3 × 3)R 30° Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4826704 |
0.665 |
|
| 2013 |
Pradhan K, Lyman PF. Growth and structure of ZnO thin films on polar (√3 × √3)R30° reconstructed and unreconstructed MgO(111) surfaces by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4791667 |
0.696 |
|
| 2011 |
Pradhan K, Lyman PF. Study of atomic layer deposition of ZnO on a polar oxide substrate by in-situ quartz crystal microbalance Ecs Transactions. 41: 247-253. DOI: 10.1149/1.3633674 |
0.62 |
|
| 2011 |
Schlossman ML, Bedzyk M, Lang J, Lyman PF. Preface to special topic: Selected papers from the eleventh international conference on surface x-ray and neutron scattering Journal of Applied Physics. 110. DOI: 10.1063/1.3661159 |
0.395 |
|
| 2008 |
Parihar SS, Lyman PF. Surface phase diagram and alloy formation for antimony on Au(110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 485-493. DOI: 10.1116/1.2905249 |
0.792 |
|
| 2008 |
Lyman P, Shneerson V, Fung R, Harder R, Parihar S, Johnson-Steigelman H, Saldin D. Solution to the phase problem for surface X-ray diffraction Acta Crystallographica Section a Foundations of Crystallography. 64: C109-C109. DOI: 10.1107/S0108767308096505 |
0.715 |
|
| 2008 |
Park B, In I, Gopalan P, Evans PG, King S, Lyman PF. Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene Applied Physics Letters. 92. DOI: 10.1063/1.2904964 |
0.755 |
|
| 2007 |
Fung R, Shneerson VL, Lyman PF, Parihar SS, Johnson-Steigelman HT, Saldin DK. Phase and amplitude recovery and diffraction image generation method: structure of Sb/Au(110)-radical3xradical3R54.7 degrees from surface X-ray diffraction. Acta Crystallographica. Section a, Foundations of Crystallography. 63: 239-50. PMID 17435288 DOI: 10.1107/S0108767307002930 |
0.729 |
|
| 2007 |
Herger R, Willmott PR, Bunk O, Schlepütz CM, Patterson BD, Delley B, Shneerson VL, Lyman PF, Saldin DK. Surface structure of SrTi O3 (001) Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.195435 |
0.336 |
|
| 2006 |
Johnson-Steigelman HT, Brinck AV, Chang JP, Lyman PF. Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1218-1222. DOI: 10.1116/1.2180274 |
0.742 |
|
| 2006 |
Lyman PF, Shneerson VL, Fung R, Parihar SS, Johnson-Steigelman HT, Lu ED, Saldin DK. Structure and stability of Sb/Au(1 1 0)-c(2 × 2) surface phase Surface Science. 600: 424-435. DOI: 10.1016/J.Susc.2005.11.019 |
0.724 |
|
| 2005 |
Lyman PF, Shneerson VL, Fung R, Harder RJ, Lu ED, Parihar SS, Saldin DK. Atomic-scale visualization of surfaces with x rays Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.081402 |
0.791 |
|
| 2004 |
Johnson-Steigelman HT, Brinck AV, Parihar SS, Lyman PF. Hafnium silicide formation on Si(001) Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.235322 |
0.774 |
|
| 2004 |
Lyman PF, Walko DA, Marasco DL, Hutchason HL, Keeffe ME, Montano PA, Bedzyk MJ. Adsorption sites of Te on Si(0 0 1) Surface Science. 561: 248-260. DOI: 10.1016/J.Susc.2004.05.071 |
0.399 |
|
| 2002 |
Lee TL, Kumpf C, Kazimirov A, Lyman PF, Scherb G, Bedzyk MJ, Nielsen M, Feidenhans'l R, Johnson RL, Fimland BO, Zegenhagen J. Structural analysis of the indium-stabilized GaAs(001)-c(8 × 2) surface Physical Review B - Condensed Matter and Materials Physics. 66: 2353011-2353019. |
0.405 |
|
| 2000 |
Lyman PF, Sakata O, Marasco DL, Lee TL, Breneman KD, Keane DT, Bedzyk MJ. Structure of a passivated Ge surface prepared from aqueous solution Surface Science. 462: L594-L598. DOI: 10.1016/S0039-6028(00)00508-2 |
0.312 |
|
| 2000 |
Bedzyk MJ, Kazimirov A, Marasco DL, Lee TL, Foster CM, Bai GR, Lyman PF, Keane DT. Probing the polarity of ferroelectric thin films with x-ray standing waves Physical Review B - Condensed Matter and Materials Physics. 61: R7873-R7876. |
0.358 |
|
| 2000 |
Sakata O, Lyman PF, Tinkham BP, Walko DA, Marasco DL, Lee TL, Bedzyk MJ. X-ray scattering study of the Ge(001):Te(1X1) surface structure Physical Review B - Condensed Matter and Materials Physics. 61: 16692-16696. |
0.346 |
|
| 1999 |
Lyman PF, Marasco DL, Walko DA, Bedzyk MJ. Multiple bonding configurations for Te adsorbed on the Ge(001) surface Physical Review B - Condensed Matter and Materials Physics. 60: 8704-8712. |
0.341 |
|
| 1998 |
Cheng L, Sturchio NC, Woicik JC, Kemner KM, Lyman PF, Bedzyk MJ. High-resolution structural study of zinc ion incorporation at the calcite cleavage surface Surface Science. 415: L976-L982. DOI: 10.1016/S0039-6028(98)00545-7 |
0.307 |
|
| 1997 |
Lin W, Lee TL, Lyman PF, Lee J, Bedzyk MJ, Marks TJ. Atomic resolution X-ray standing wave microstructural characterization of NLO-active self-assembled chromophoric superlattices Journal of the American Chemical Society. 119: 2205-2211. DOI: 10.1021/Ja962293V |
0.314 |
|
| 1997 |
Sturchio NC, Chiarello RP, Cheng L, Lyman PF, Bedzyk MJ, Qian Y, You H, Yee D, Geissbuhler P, Sorensen LB, Liang Y, Baer DR. Lead adsorption at the calcite-water interface: Synchrotron X-ray standing wave and X-ray reflectivity studies Geochimica Et Cosmochimica Acta. 61: 251-263. DOI: 10.1016/S0016-7037(96)00326-2 |
0.364 |
|
| 1997 |
Lyman PF, Bedzyk MJ. Local structure of Sn/Si(001) surface phases Surface Science. 371: 307-315. |
0.472 |
|
| 1996 |
Qian Y, Bedzyk MJ, Lyman PF, Lee TL, Tang S, Freeman AJ. Structure and surface kinetics of bismuth adsorption on Si(001). Physical Review. B, Condensed Matter. 54: 4424-4427. PMID 9986387 DOI: 10.1103/Physrevb.54.4424 |
0.37 |
|
| 1996 |
Qian Y, Lyman PF, Lee T, Bedzyk MJ. Thermal vibration amplitudes and structure of Sb on Si(0 0 1) by X-ray standing waves Physica B: Condensed Matter. 221: 430-436. DOI: 10.1016/0921-4526(95)00963-9 |
0.317 |
|
| 1996 |
Lyman PF, Qian Y, Lee TL, Bedzyk MJ. Adsorbate structure and vibrations on the Bi/Si(001)-(1 × 2) surface Physica B: Condensed Matter. 221: 426-429. DOI: 10.1016/0921-4526(95)00962-0 |
0.334 |
|
| 1996 |
Lyman PF, Bedzyk MJ. Surfactant-mediated epitaxy of metastable SnGe alloys Applied Physics Letters. 69: 978-980. |
0.354 |
|
| 1996 |
Qian Y, Bedzyk MJ, Lyman PF, Lee TL, Tang S, Freeman AJ. Structure and surface kinetics of bismuth adsorption on Si(001) Physical Review B - Condensed Matter and Materials Physics. 54: 4424-4427. |
0.382 |
|
| 1995 |
Lyman PF, Qian Y, Bedzyk MJ. Adsorbate structure and substrate relaxation for the Sb Si(001)-(2 × 1) surface Surface Science. 325: L385-L391. DOI: 10.1016/0039-6028(94)00812-4 |
0.319 |
|
| 1995 |
Lyman PF, Qian Y, Bedzyk MJ. Analysis of the dimerized Sb/Si(001)-(2×1) surface by x ray standing waves Materials Research Society Symposium - Proceedings. 375: 121-126. |
0.331 |
|
| 1994 |
Qian Y, Sturchio NC, Chiarello RP, Lyman PF, Lee TL, Bedzyk MJ. Lattice location of trace elements within minerals and at their surfaces with X-ray standing waves. Science (New York, N.Y.). 265: 1555-7. PMID 8079168 DOI: 10.1126/Science.8079168 |
0.316 |
|
| 1993 |
Seiberling LE, Grant MW, Lyman PF. Transmission ion channeling facility for structural studies of monolayer films on clean semiconductor surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 715-722. DOI: 10.1116/1.578797 |
0.329 |
|
| 1993 |
Grant MW, Lyman PF, Hoogenraad JH, Carlsward BS, Arms DA, Seiberling LE, Namavar F. Fabrication and characterization of thin, self-supporting germanium single crystals Journal of Applied Physics. 73: 2486-2488. DOI: 10.1063/1.353108 |
0.319 |
|
| 1992 |
Grant MW, Lyman PF, Hoogenraad JH, Seiberling LE. Dimer formation in monolayer antimony films deposited at room temperature on Si(100)-2 × 1 Surface Science. 279. DOI: 10.1016/0039-6028(92)90733-M |
0.359 |
|
| 1991 |
Lyman PF, Thevuthasan S, Seiberling LE. Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1) Journal of Crystal Growth. 113: 45-52. DOI: 10.1016/0022-0248(91)90007-R |
0.308 |
|
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