| Year |
Citation |
Score |
| 2018 |
Lo SM, Lee JY, Weiss SM, Fauchet PM. Bloch mode selection in silicon photonic crystal microring resonators. Optics Letters. 43: 2957-2960. PMID 29905733 DOI: 10.1364/Ol.43.002957 |
0.304 |
|
| 2017 |
Lo SM, Hu S, Gaur G, Kostoulas Y, Weiss SM, Fauchet PM. Photonic crystal microring resonator for label-free biosensing. Optics Express. 25: 7046-7054. PMID 28381045 DOI: 10.1364/Oe.25.007046 |
0.364 |
|
| 2017 |
Hungerford CD, Fauchet PM. Design of a plasmonic back reflector using Ag nanoparticles with a mirror support for an a-Si:H solar cell Aip Advances. 7: 075004. DOI: 10.1063/1.4993743 |
0.371 |
|
| 2017 |
Gillmer SR, Fang DZ, Wayson SE, Winans JD, Abdolrahim N, DesOrmeaux JS, Getpreecharsawas J, Ellis JD, Fauchet PM, McGrath JL. Predicting the failure of ultrathin porous membranes in bulge tests Thin Solid Films. 631: 152-160. DOI: 10.1016/J.Tsf.2017.04.004 |
0.774 |
|
| 2016 |
Krzyzanowska H, Fu Y, Ni KS, Fauchet PM. Efficient Energy Transfer between Si Nanostructures and Er Located at a Controlled Distance Acs Photonics. 3: 564-570. DOI: 10.1021/Acsphotonics.5B00515 |
0.441 |
|
| 2015 |
Heiniger AT, Miller BL, Fauchet PM. Numerical study of sensitivity enhancement in a photonic crystal microcavity biosensor due to optical forces. Optics Express. 23: 25072-83. PMID 26406707 DOI: 10.1364/Oe.23.025072 |
0.304 |
|
| 2015 |
Winans JD, Hungerford C, Shome K, Rothberg LJ, Fauchet PM. Plasmonic effects in ultrathin amorphous silicon solar cells: performance improvements with Ag nanoparticles on the front, the back, and both. Optics Express. 23: A92-A105. PMID 25836257 DOI: 10.1364/Oe.23.000A92 |
0.802 |
|
| 2015 |
Qi C, Striemer CC, Gaborski TR, McGrath JL, Fauchet PM. Influence of silicon dioxide capping layers on pore characteristics in nanocrystalline silicon membranes. Nanotechnology. 26: 055706. PMID 25590751 DOI: 10.1088/0957-4484/26/5/055706 |
0.814 |
|
| 2014 |
Qi C, Striemer CC, Gaborski TR, McGrath JL, Fauchet PM. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks. Small (Weinheim An Der Bergstrasse, Germany). 10: 2946-53. PMID 24623562 DOI: 10.1002/Smll.201303447 |
0.833 |
|
| 2014 |
Lo SM, Lee JY, Weiss SM, Fauchet PM. Chirped photonic crystal mode converters for broad-band coupling with highly dispersive photonic crystal microring resonators Proceedings of Spie - the International Society For Optical Engineering. 8990. DOI: 10.1117/12.2038741 |
0.371 |
|
| 2013 |
Fu Y, Krzyżanowska H, Ni KS, Fauchet PM. Suppression of free carrier absorption in silicon using multislot SiO2/nc-Si waveguides. Optics Letters. 38: 4849-52. PMID 24322148 DOI: 10.1364/Ol.38.004849 |
0.461 |
|
| 2013 |
Snyder JL, Getpreecharsawas J, Fang DZ, Gaborski TR, Striemer CC, Fauchet PM, Borkholder DA, McGrath JL. High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes. Proceedings of the National Academy of Sciences of the United States of America. 110: 18425-30. PMID 24167263 DOI: 10.1073/Pnas.1308109110 |
0.423 |
|
| 2013 |
Pal S, Yadav AR, Lifson MA, Baker JE, Fauchet PM, Miller BL. Selective virus detection in complex sample matrices with photonic crystal optical cavities. Biosensors & Bioelectronics. 44: 229-34. PMID 23434758 DOI: 10.1016/J.Bios.2013.01.004 |
0.351 |
|
| 2013 |
Sriram R, Baker JE, Fauchet PM, Miller BL. Two dimensional photonic crystal biosensors as a platform for label-free sensing of biomolecules Progress in Biomedical Optics and Imaging - Proceedings of Spie. 8570. DOI: 10.1117/12.2007285 |
0.347 |
|
| 2012 |
Pal S, Fauchet PM, Miller BL. 1-D and 2-D photonic crystals as optical methods for amplifying biomolecular recognition. Analytical Chemistry. 84: 8900-8. PMID 22947038 DOI: 10.1021/Ac3012945 |
0.307 |
|
| 2012 |
Kavalenka MN, Striemer CC, Fang DZ, Gaborski TR, McGrath JL, Fauchet PM. Ballistic and non-ballistic gas flow through ultrathin nanopores. Nanotechnology. 23: 145706. PMID 22433182 DOI: 10.1088/0957-4484/23/14/145706 |
0.745 |
|
| 2012 |
Lee JY, Fauchet PM. Slow-light dispersion in periodically patterned silicon microring resonators. Optics Letters. 37: 58-60. PMID 22212790 DOI: 10.1364/Ol.37.000058 |
0.367 |
|
| 2012 |
Shome K, Fauchet PM. Nano-holes and slot effect Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Fw4B.6 |
0.35 |
|
| 2012 |
Fauchet PM, Lee JY, Anderson SP. Slow-light and microcavities for optical signal processing in the SOI platform Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Ftu5A.1 |
0.334 |
|
| 2012 |
Heiniger AT, Miller BL, Fauchet PM. Limits of diffusive transport to an optical biosensor and the impact of optical forces Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Ftu4C.7 |
0.301 |
|
| 2012 |
Kavalenka MN, Striemer CC, Desormeaux JPS, McGrath JL, Fauchet PM. Chemical capacitive sensing using ultrathin flexible nanoporous electrodes Sensors and Actuators, B: Chemical. 162: 22-26. DOI: 10.1016/J.Snb.2011.11.076 |
0.792 |
|
| 2012 |
Krzyzanowska H, Ni KS, Fu Y, Fauchet PM. Electroluminescence from Er-doped SiO 2/nc-Si multilayers under lateral carrier injection Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 177: 1547-1550. DOI: 10.1016/J.Mseb.2011.12.032 |
0.478 |
|
| 2011 |
Anderson SP, Fauchet PM. Experimental demonstration of evanescent coupling and photon confinement in oxide-clad silicon microcavities. Optics Letters. 36: 2698-700. PMID 21765513 DOI: 10.1364/Ol.36.002698 |
0.458 |
|
| 2011 |
Pal S, Guillermain E, Sriram R, Miller BL, Fauchet PM. Silicon photonic crystal nanocavity-coupled waveguides for error-corrected optical biosensing. Biosensors & Bioelectronics. 26: 4024-31. PMID 21524903 DOI: 10.1016/J.Bios.2011.03.024 |
0.391 |
|
| 2011 |
Snyder JL, Clark A, Fang DZ, Gaborski TR, Striemer CC, Fauchet PM, McGrath JL. An experimental and theoretical analysis of molecular separations by diffusion through ultrathin nanoporous membranes. Journal of Membrane Science. 369: 119-129. PMID 21297879 DOI: 10.1016/J.Memsci.2010.11.056 |
0.309 |
|
| 2011 |
Clarkson JP, Winans J, Fauchet PM. On the scaling behavior of dipole and quadrupole modes in coupled plasmonic nanoparticle pairs Optical Materials Express. 1: 970-979. DOI: 10.1364/Ome.1.000970 |
0.768 |
|
| 2011 |
Baker JE, Sriram R, Fauchet PM, Miller BL. Towards an optical concentrator for nanoparticles Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7888. DOI: 10.1117/12.877197 |
0.341 |
|
| 2011 |
Ni KS, Krzyzanowska H, Fu Y, Fauchet PM. Electroluminescence from Er doped SiO2/nc-Si multilayers under lateral carrier injection Ieee International Conference On Group Iv Photonics Gfp. 202-204. DOI: 10.1109/GROUP4.2011.6053763 |
0.327 |
|
| 2011 |
Daniel BA, Lee JY, Fauchet PM, Agrawal GP. Observation of spectral and temporal polarization oscillations of optical pulses in a silicon nanowaveguide Applied Physics Letters. 99. DOI: 10.1063/1.3662373 |
0.324 |
|
| 2011 |
Veeramachaneni B, Winans JD, Hu S, Kawamura D, Fauchet PM, Witt K, Hirschman KD. A novel technique for localized formation of SOI active regions Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1865-1868. DOI: 10.1002/Pssc.201000313 |
0.828 |
|
| 2011 |
Winans JD, Lee JY, Veeramachaneni B, Hu S, Kawamura D, Witt K, Hirschman KD, Fauchet PM. Isolated silicon waveguides via porous silicon formation by targeted fluorine doping Physica Status Solidi (a) Applications and Materials Science. 208: 1446-1448. DOI: 10.1002/Pssa.201000125 |
0.834 |
|
| 2011 |
Winans JD, Clarkson JP, Fauchet PM. Silver nanoparticles to enhance the efficiency of thin-film solar cells Optics Infobase Conference Papers. |
0.783 |
|
| 2010 |
Gaborski TR, Snyder JL, Striemer CC, Fang DZ, Hoffman M, Fauchet PM, McGrath JL. High-performance separation of nanoparticles with ultrathin porous nanocrystalline silicon membranes. Acs Nano. 4: 6973-81. PMID 21043434 DOI: 10.1021/Nn102064C |
0.42 |
|
| 2010 |
Anderson SP, Fauchet PM. Ultra-low power modulators using MOS depletion in a high-Q SiO₂-clad silicon 2-D photonic crystal resonator. Optics Express. 18: 19129-40. PMID 20940808 DOI: 10.1364/Oe.18.019129 |
0.339 |
|
| 2010 |
Fang DZ, Striemer CC, Gaborski TR, McGrath JL, Fauchet PM. Pore size control of ultrathin silicon membranes by rapid thermal carbonization. Nano Letters. 10: 3904-8. PMID 20839831 DOI: 10.1021/Nl101602Z |
0.351 |
|
| 2010 |
Lee JY, Yin L, Agrawal GP, Fauchet PM. Ultrafast optical switching based on nonlinear polarization rotation in silicon waveguides. Optics Express. 18: 11514-23. PMID 20589012 DOI: 10.1364/Oe.18.011514 |
0.353 |
|
| 2010 |
Agrawal AA, Nehilla BJ, Reisig KV, Gaborski TR, Fang DZ, Striemer CC, Fauchet PM, McGrath JL. Porous nanocrystalline silicon membranes as highly permeable and molecularly thin substrates for cell culture. Biomaterials. 31: 5408-17. PMID 20398927 DOI: 10.1016/J.Biomaterials.2010.03.041 |
0.411 |
|
| 2010 |
Pal S, Guillermain E, Miller BL, Fauchet PM. Nanocavities in photonic crystal waveguides for label-free biosensing Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fwf1 |
0.354 |
|
| 2010 |
Shome K, Fang DZ, Fauchet PM. Metallized ultrathin porous membranes for biological and chemical sensing Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fwb3 |
0.346 |
|
| 2010 |
Anderson SP, Fauchet PM. Ultra-low energy modulation using high-Q SiO2-clad silicon photonic crystal microcavities Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fthq2 |
0.362 |
|
| 2010 |
Clarkson JP, Fauchet PM. Understanding scattering in silver nanoparticle arrays for improving plasmon enhanced photovoltaic cells Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fma4 |
0.647 |
|
| 2010 |
Pal S, Guillermain E, Sriram R, Miller B, Fauchet PM. Microcavities in photonic crystal waveguides for biosensor applications Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7553. DOI: 10.1117/12.848237 |
0.395 |
|
| 2010 |
Shome K, Kavalenka M, Fang DZ, Fauchet PM. Metallized ultrathin porous silicon membranes for biological sensing using SERS Bios. 7553. DOI: 10.1117/12.848231 |
0.774 |
|
| 2010 |
Fang DZ, Striemer CC, Gaborski TR, McGrath JL, Fauchet PM. Methods for controlling the pore properties of ultra-thin nanocrystalline silicon membranes Journal of Physics Condensed Matter. 22. DOI: 10.1088/0953-8984/22/45/454134 |
0.387 |
|
| 2010 |
Fu Y, Ni K, Fauchet PM. Suppression of free carrier absorption in multi-slot silicon light emission devices Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010. |
0.327 |
|
| 2009 |
Yin L, Zhang J, Fauchet PM, Agrawal GP. Optical switching using nonlinear polarization rotation inside silicon waveguides. Optics Letters. 34: 476-8. PMID 19373346 DOI: 10.1364/Ol.34.000476 |
0.509 |
|
| 2009 |
Striemer CC, Gaborski TR, Fang DZ, Snyder JL, McGrath JL, Fauchet PM. Porous ultrathin silicon membranes for purification of nanoscale materials Mrs Proceedings. 1209. DOI: 10.1557/Proc-1209-P02-08 |
0.391 |
|
| 2009 |
Guillermain E, Fauchet PM. Resonant microcavities coupled to a photonic crystal waveguide for multi-channel biodetection Materials Research Society Symposium Proceedings. 1191: 133-138. DOI: 10.1557/Proc-1191-Oo11-06 |
0.324 |
|
| 2009 |
Kavalenka M, Fang D, Striemer CC, McGrath JL, Fauchet PM. Hybrid Polymer/Ultrathin Porous Nanocrystalline Silicon Membranes System for Flow-through Chemical Vapor and Gas Detection Mrs Proceedings. 1190. DOI: 10.1557/Proc-1190-Nn12-03 |
0.797 |
|
| 2009 |
Yin L, Lee JY, Fauchet PM, Agrawal GP. Realization of an Ultrafast Silicon Kerr Switch Frontiers in Optics. DOI: 10.1364/Fio.2009.Fml4 |
0.347 |
|
| 2009 |
Guillermain E, Fauchet PM. Multi-channel biodetection via resonant microcavities coupled to a photonic crystal waveguide Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7167. DOI: 10.1117/12.808008 |
0.364 |
|
| 2009 |
Veeramachaneni B, Winans J, Fauchet PM, Witt K, Hirschman KD. A new technique for localized formation of SOI active regions Proceedings - Ieee International Soi Conference. DOI: 10.1109/SOI.2009.5318774 |
0.399 |
|
| 2009 |
Fu Y, Fauchet PM. Scattering loss of multi-slot Silicon light emission device: Theory and experiment Ieee International Conference On Group Iv Photonics Gfp. 160-162. DOI: 10.1109/GROUP4.2009.5338330 |
0.337 |
|
| 2009 |
Negro LD, Fauchet PM, Iacona F. Frontiers in silicon-based photonics Physica E: Low-Dimensional Systems and Nanostructures. 41: v. DOI: 10.1016/J.Physe.2008.08.020 |
0.427 |
|
| 2009 |
Clarkson JP, See GG, Veeramachaneni B, Gadeken LL, Hirschman KD, Fauchet PM. Conformal P-N junctions in macroporous silicon for photovoltaic energy conversion Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1754-1758. DOI: 10.1002/Pssc.200881119 |
0.747 |
|
| 2008 |
Yoo HG, Fu Y, Riley D, Shin JH, Fauchet PM. Birefringence and optical power confinement in horizontal multi-slot waveguides made of Si and SiO2. Optics Express. 16: 8623-8. PMID 18545575 DOI: 10.1364/Oe.16.008623 |
0.411 |
|
| 2008 |
Kim E, Xiong H, Striemer CC, Fang DZ, Fauchet PM, McGrath JL, Amemiya S. A structure-permeability relationship of ultrathin nanoporous silicon membrane: a comparison with the nuclear envelope. Journal of the American Chemical Society. 130: 4230-1. PMID 18324815 DOI: 10.1021/Ja711258W |
0.4 |
|
| 2008 |
Lee MR, Fauchet PM. Nanoscale microcavity sensor for single particle detection: erratum Optics Letters. 33: 756. DOI: 10.1364/Ol.33.000756 |
0.466 |
|
| 2008 |
Anderson SP, Shroff AR, Fauchet PM. Multi-channel optical switch in photonic crystal Optics Infobase Conference Papers. DOI: 10.1364/Fio.2008.Fthf4 |
0.3 |
|
| 2008 |
Yin L, Zhang J, Fauchet PM, Agrawal GP. Design of An Optical Kerr Shutter Using Silicon Waveguides Frontiers in Optics. DOI: 10.1364/Fio.2008.Fthf3 |
0.543 |
|
| 2008 |
Anderson SP, Shroff AR, Fauchet PM. Slow light with photonic crystals for on-chip optical interconnects Advances in Optical Technologies. DOI: 10.1155/2008/293531 |
0.366 |
|
| 2008 |
Yoo HG, Fauchet PM. Experimental verification of dielectric constant decrease in silicon nanostructures Proceedings of Spie - the International Society For Optical Engineering. 6902. DOI: 10.1117/12.767475 |
0.365 |
|
| 2008 |
Yoo HG, Fauchet PM. Erratum: Dielectric constant reduction in silicon nanostructures [Phys. Rev. B77, 115355 (2008)] Physical Review B. 77. DOI: 10.1103/Physrevb.77.209903 |
0.36 |
|
| 2008 |
Yoo HG, Fauchet PM. Dielectric constant reduction in silicon nanostructures Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.115355 |
0.465 |
|
| 2008 |
Fauchet PM, Campbell IH, Adar F. Raman microscopy of solid surfaces after laser irradiation Advances in Laser Science-I. 146: 730-731. DOI: 10.1063/1.35795 |
0.313 |
|
| 2008 |
Saarinen JJ, Weiss SM, Fauchet PM, Sipe JE. Reflectance analysis of a multilayer one-dimensional porous silicon structure: Theory and experiment Journal of Applied Physics. 104: 013103. DOI: 10.1063/1.2949265 |
0.366 |
|
| 2007 |
Zhang J, Lin Q, Piredda G, Boyd RW, Agrawal GP, Fauchet PM. Optical solitons in a silicon waveguide. Optics Express. 15: 7682-8. PMID 19547096 DOI: 10.1364/Oe.15.007682 |
0.55 |
|
| 2007 |
Lee MR, Fauchet PM. Two-dimensional silicon photonic crystal based biosensing platform for protein detection. Optics Express. 15: 4530-5. PMID 19532700 DOI: 10.1364/Oe.15.004530 |
0.597 |
|
| 2007 |
Lee MR, Fauchet PM. Nanoscale microcavity sensor for single particle detection. Optics Letters. 32: 3284-6. PMID 18026281 DOI: 10.1364/Ol.32.003284 |
0.517 |
|
| 2007 |
Striemer CC, Gaborski TR, McGrath JL, Fauchet PM. Charge- and size-based separation of macromolecules using ultrathin silicon membranes. Nature. 445: 749-53. PMID 17301789 DOI: 10.1038/Nature05532 |
0.359 |
|
| 2007 |
Ouyang H, Delouise LA, Miller BL, Fauchet PM. Label-free quantitative detection of protein using macroporous silicon photonic bandgap biosensors. Analytical Chemistry. 79: 1502-6. PMID 17241093 DOI: 10.1021/Ac0608366 |
0.566 |
|
| 2007 |
Anderson SP, Haurylau M, Zhang J, Fauchet PM. Hybrid photonic crystal microcavity switches on SOI Proceedings of Spie - the International Society For Optical Engineering. 6477. DOI: 10.1117/12.707905 |
0.757 |
|
| 2007 |
Clarkson JP, Fauchet PM, Rajalingam V, Hirschman KD. Solvent detection and water monitoring with a macroporous silicon field-effect sensor Ieee Sensors Journal. 7: 329-335. DOI: 10.1109/Jsen.2006.890132 |
0.699 |
|
| 2007 |
Chen H, Shin JH, Fauchet PM, Sung J, Shin J, Sung GY. Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique Applied Physics Letters. 91: 173121. DOI: 10.1063/1.2803071 |
0.45 |
|
| 2007 |
Zhang J, Lin Q, Piredda G, Boyd RW, Agrawal GP, Fauchet PM. Anisotropic nonlinear response of silicon in the near-infrared region Applied Physics Letters. 91: 071113. DOI: 10.1063/1.2768632 |
0.381 |
|
| 2007 |
Lin Q, Zhang J, Piredda G, Boyd RW, Fauchet PM, Agrawal GP. Dispersion of silicon nonlinearities in the near infrared region Applied Physics Letters. 91: 021111. DOI: 10.1063/1.2750523 |
0.563 |
|
| 2007 |
Weiss SM, Zhang J, Fauchet PM, Seregin VV, Coffer JL. Tunable silicon-based light sources using erbium doped liquid crystals Applied Physics Letters. 90: 031112. DOI: 10.1063/1.2432295 |
0.557 |
|
| 2007 |
Chen G, Chen H, Haurylau M, Nelson NA, Albonesi DH, Fauchet PM, Friedman EG. Predictions of CMOS compatible on-chip optical interconnect Integration, the Vlsi Journal. 40: 434-446. DOI: 10.1016/j.vlsi.2006.10.001 |
0.732 |
|
| 2007 |
Clarkson JP, Sun W, Hirschman KD, Gadeken LL, Fauchet PM. Betavoltaic and photovoltaic energy conversion in three-dimensional macroporous silicon diodes Physica Status Solidi (a) Applications and Materials Science. 204: 1536-1540. DOI: 10.1002/Pssa.200674417 |
0.721 |
|
| 2007 |
Sun W, Puzas JE, Sheu T, Fauchet PM. Porous silicon as a cell interface for bone tissue engineering Physica Status Solidi (a). 204: 1429-1433. DOI: 10.1002/Pssa.200674377 |
0.354 |
|
| 2007 |
Ouyang H, Deng Y, Knox WH, Fauchet PM. Photochemical etching of silicon by two photon absorption Physica Status Solidi (a). 204: 1255-1259. DOI: 10.1002/Pssa.200674303 |
0.651 |
|
| 2007 |
Sun W, Puzas J, Sheu T, Liu X, Fauchet P. Nano- to Microscale Porous Silicon as a Cell Interface for Bone-Tissue Engineering Advanced Materials. 19: 921-924. DOI: 10.1002/Adma.200600319 |
0.304 |
|
| 2007 |
Lee MR, Fauchet PM. Two-dimensional Si photonic crystal microcavity for single particle detection Ieee International Conference On Group Iv Photonics Gfp. 234-236. |
0.541 |
|
| 2006 |
Lin Q, Zhang J, Fauchet PM, Agrawal GP. Ultrabroadband parametric generation and wavelength conversion in silicon waveguides. Optics Express. 14: 4786-99. PMID 19516636 DOI: 10.1364/Oe.14.004786 |
0.527 |
|
| 2006 |
Shroff AR, Fauchet PM. Multi-resonant photonic crystal waveguide for integrated active devices in silicon Optics Infobase Conference Papers. DOI: 10.1364/Fio.2006.Fwu4 |
0.408 |
|
| 2006 |
Zhang J, Haurylau M, Chen H, Chen G, Nelson NA, Albonesi DH, Friedman EG, Fauchet PM. A Semi-Analytical Simulation Model for Capacitor Based E-O Modulators Frontiers in Optics. DOI: 10.1364/Fio.2006.Fwo2 |
0.761 |
|
| 2006 |
Lee M, Fauchet PM. Single molecule detection using silicon photonic crystal slab Optics Infobase Conference Papers. DOI: 10.1364/Fio.2006.Fthc6 |
0.562 |
|
| 2006 |
Lee M, Fauchet PM. A two dimensional silicon-based photonic crystal microcavity biosensor Proceedings of Spie - the International Society For Optical Engineering. 6322. DOI: 10.1117/12.682049 |
0.598 |
|
| 2006 |
Fauchet PM, Shin JH. Introduction to the issue on silicon photonics Ieee Journal On Selected Topics in Quantum Electronics. 12: 1327. DOI: 10.1109/Jstqe.2006.887694 |
0.427 |
|
| 2006 |
Haurylau M, Anderson SP, Marshall KL, Fauchet PM. Electrically tunable silicon 2-D photonic bandgap structures Ieee Journal On Selected Topics in Quantum Electronics. 12: 1527-1532. DOI: 10.1109/Jstqe.2006.884084 |
0.778 |
|
| 2006 |
Weiss SM, Fauchet PM. Porous silicon one-dimensional photonic crystals for optical signal modulation Ieee Journal On Selected Topics in Quantum Electronics. 12: 1514-1519. DOI: 10.1109/Jstqe.2006.884083 |
0.476 |
|
| 2006 |
Haurylau M, Chen G, Chen H, Zhang J, Nelson NA, Albonesi DH, Friedman EG, Fauchet PM. On-chip optical interconnect roadmap: Challenges and critical directions Ieee Journal On Selected Topics in Quantum Electronics. 12: 1699-1704. DOI: 10.1109/Jstqe.2006.880615 |
0.778 |
|
| 2006 |
Chen G, Chen H, Haurylau M, Nelson NA, Albonesi DH, Fauchet PM, Friedman EG. On-chip copper-based vs. optical interconnects: Delay uncertainty, latency, power, and bandwidth density comparative predictions 2006 International Interconnect Technology Conference, Iitc. 39-41. DOI: 10.1109/IITC.2006.1648640 |
0.716 |
|
| 2006 |
Ouyang H, Striemer CC, Fauchet PM. Quantitative analysis of the sensitivity of porous silicon optical biosensors Applied Physics Letters. 88. DOI: 10.1063/1.2196069 |
0.647 |
|
| 2006 |
Haurylau M, Anderson SP, Marshall KL, Fauchet PM. Electrical modulation of silicon-based two-dimensional photonic bandgap structures Applied Physics Letters. 88. DOI: 10.1063/1.2172070 |
0.784 |
|
| 2006 |
Haurylau M, Zhang J, Weiss SM, Fauchet PM, Martyshkin DV, Rupasov VI, Krivoshlykov SG. Nonlinear optical response of photonic bandgap structures containing PbSe quantum dots Journal of Photochemistry and Photobiology a: Chemistry. 183: 329-333. DOI: 10.1016/J.Jphotochem.2006.03.026 |
0.802 |
|
| 2005 |
Saarinen J, Weiss S, Fauchet P, Sipe JE. Optical sensor based on resonant porous silicon structures. Optics Express. 13: 3754-64. PMID 19495282 DOI: 10.1364/Opex.13.003754 |
0.324 |
|
| 2005 |
Weiss S, Ouyang H, Zhang J, Fauchet P. Electrical and thermal modulation of silicon photonic bandgap microcavities containing liquid crystals. Optics Express. 13: 1090-7. PMID 19494976 DOI: 10.1364/Opex.13.001090 |
0.686 |
|
| 2005 |
Sun W, Kherani NP, Hirschman KD, Gadeken LL, Fauchet PM. Harvesting betavoltaic and photovoltaic energy with three dimensional porous silicon diodes Materials Research Society Symposium Proceedings. 836: 285-290. DOI: 10.1557/Proc-836-L8.3 |
0.376 |
|
| 2005 |
Krishnan R, Xie Q, Kulik J, Wang XD, Krauss TD, Fauchet PM. Charge transport in silicon nanocrystal arrays Materials Research Society Symposium Proceedings. 832: 201-206. DOI: 10.1557/Proc-832-F3.1 |
0.549 |
|
| 2005 |
Weiss SM, Ouyang H, Zhang J, Fauchet PM. Electrical and thermal modulation of silicon photonic bandgap microcavities containing liquid crystals Optics Express. 13: 1090-1097. DOI: 10.1364/OPEX.13.001090 |
0.507 |
|
| 2005 |
Weiss SM, Fauchet PM. Active building blocks for silicon photonic devices Proceedings of Spie - the International Society For Optical Engineering. 6017. DOI: 10.1117/12.632489 |
0.362 |
|
| 2005 |
Ouyang H, Fauchet PM. Biosensing using porous silicon photonic bandgap structures Proceedings of Spie - the International Society For Optical Engineering. 6005. DOI: 10.1117/12.629961 |
0.615 |
|
| 2005 |
Ouyang H, Lee M, Miller BL, Fauchet PM. Silicon photonic bandgap biosensors Proceedings of Spie - the International Society For Optical Engineering. 5926: 1-11. DOI: 10.1117/12.621890 |
0.704 |
|
| 2005 |
Haurylau M, Anderson SP, Marshall KL, Fauchet PM. Electrical tuning of silicon-based 2-D photonic bandgap structures Proceedings of Spie - the International Society For Optical Engineering. 5926: 1-10. DOI: 10.1117/12.621502 |
0.788 |
|
| 2005 |
Chen G, Chen H, Haurylau M, Nelson N, Albonesi D, Fauchet PM, Friedman EG. Electrical and optical on-chip interconnects in scaled microprocessors Proceedings - Ieee International Symposium On Circuits and Systems. 2514-2517. DOI: 10.1109/ISCAS.2005.1465137 |
0.739 |
|
| 2005 |
Fauchet PM. Light emission from Si quantum dots Materials Today. 8: 26-33. DOI: 10.1016/S1369-7021(04)00676-5 |
0.413 |
|
| 2005 |
Archer M, Christophersen M, Fauchet PM. Electrical porous silicon chemical sensor for detection of organic solvents Sensors and Actuators, B: Chemical. 106: 347-357. DOI: 10.1016/J.Snb.2004.08.016 |
0.636 |
|
| 2005 |
Fauchet PM, Ruan J, Chen H, Pavesi L, Dal Negro L, Cazzaneli M, Elliman RG, Smith N, Samoc M, Luther-Davies B. Optical gain in different silicon nanocrystal systems Optical Materials. 27: 745-749. DOI: 10.1016/J.Optmat.2004.08.008 |
0.387 |
|
| 2005 |
Weiss SM, Haurylau M, Fauchet PM. Tunable photonic bandgap structures for optical interconnects Optical Materials. 27: 740-744. DOI: 10.1016/J.Optmat.2004.08.007 |
0.803 |
|
| 2005 |
Weiss SM, Fauchet PM. Thermal tuning of silicon-based one-dimensional photonic bandgap structures Physica Status Solidi C: Conferences. 2: 3278-3282. DOI: 10.1002/Pssc.200461143 |
0.429 |
|
| 2005 |
Haurylau M, Shroff AR, Fauchet PM. Optical properties and tunability of macroporous silicon 2-D photonic bandgap structures Physica Status Solidi (a) Applications and Materials Science. 202: 1477-1481. DOI: 10.1002/Pssa.200461146 |
0.804 |
|
| 2005 |
Ouyang H, Christophersen M, Fauchet PM. Enhanced control of porous silicon morphology from macropore to mesopore formation Physica Status Solidi (a) Applications and Materials Science. 202: 1396-1401. DOI: 10.1002/Pssa.200461112 |
0.641 |
|
| 2005 |
Sun W, Kherani NP, Hirschman KD, Gadeken LL, Fauchet PM. A three-dimensional porous silicon p-n diode for betavoltaics and photovoltaics Advanced Materials. 17: 1230-1233. DOI: 10.1002/Adma.200401723 |
0.396 |
|
| 2005 |
Ouyang H, Christophersen M, Viard R, Miller BL, Fauchet PM. Macroporous silicon microcavities for macromolecule detection Advanced Functional Materials. 15: 1851-1859. DOI: 10.1002/Adfm.200500218 |
0.63 |
|
| 2004 |
Archer M, Christophersen M, Fauchet PM. Macroporous silicon electrical sensor for DNA hybridization detection. Biomedical Microdevices. 6: 203-11. PMID 15377829 DOI: 10.1023/B:Bmmd.0000042049.85425.Af |
0.607 |
|
| 2004 |
Krishnan R, Hahn MA, Yu Z, Silcox J, Fauchet PM, Krauss TD. Polarization surface-charge density of single semiconductor quantum rods. Physical Review Letters. 92: 216803. PMID 15245305 DOI: 10.1103/Physrevlett.92.216803 |
0.504 |
|
| 2004 |
Ruan J, Chen H, Fauchet PM. Optical gain study in nanocrystalline Silicon superlattices Frontiers in Optics. DOI: 10.1364/Fio.2004.Jwa8 |
0.596 |
|
| 2004 |
Ouyang H, DeLouise LA, Christophersen M, Miller BL, Fauchet PM. Biosensing Platform Using Porous Silicon Microcavities Frontiers in Optics. DOI: 10.1364/Fio.2004.Fwm6 |
0.595 |
|
| 2004 |
Haurylau M, Shroff AR, Fauchet PM. Tunable 2D photonic crystals for switching applications Frontiers in Optics. DOI: 10.1364/Fio.2004.Fwj4 |
0.771 |
|
| 2004 |
Saarinen JJ, Sipe JE, Weiss SM, Fauchet PM. Birefringence in porous silicon structures Frontiers in Optics. DOI: 10.1364/Fio.2004.Ftus6 |
0.368 |
|
| 2004 |
Weiss SM, Zhang J, Fauchet PM. High contrast modulation of a silicon-based optical switch using liquid crystals Frontiers in Optics. DOI: 10.1364/Fio.2004.Fmq2 |
0.564 |
|
| 2004 |
Hirschman KD, Archer M, Persaud D, Rajalingam V, Clarkson J, Mann J, Phillips D, Sun W, Fauchet PM. Integrated sensor arrays with a configurable network interface for chemical and biological detection Proceedings of Spie - the International Society For Optical Engineering. 5591: 205-212. DOI: 10.1117/12.580572 |
0.567 |
|
| 2004 |
Ouyang H, Delouise LA, Christophersen M, Miller BL, Fauchet PM. Biosensing with one dimensional photonic bandgap structure Proceedings of Spie - the International Society For Optical Engineering. 5511: 71-80. DOI: 10.1117/12.561138 |
0.504 |
|
| 2004 |
Haurylau M, Weiss SM, Fauchet PM. Dynamically tunable ID and 2D photonic bandgap structures for optical interconnect applications Proceedings of Spie - the International Society For Optical Engineering. 5511: 38-49. DOI: 10.1117/12.561114 |
0.772 |
|
| 2004 |
Krishnan R, Xie Q, Kulik J, Wang XD, Lu S, Molinari M, Gao Y, Krauss TD, Fauchet PM. Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals Journal of Applied Physics. 96: 654-660. DOI: 10.1063/1.1751632 |
0.591 |
|
| 2004 |
Striemer CC, Krishnan R, Fauchet PM. The development of nanocrystalline silicon for emerging microelectronic and nanoelectronic applications Jom. 56: 20-25. DOI: 10.1007/S11837-004-0283-3 |
0.603 |
|
| 2004 |
Weiss SM, Fauchet PM. Temperature stability for photonic crystal devices Optics and Photonics News. 15: 35. |
0.305 |
|
| 2004 |
Weiss SM, Haurylau M, Fauchet PM. Silicon-based photonic bandgap modulators 2004 1st Ieee International Conference On Group Iv Photonics. 171-173. |
0.78 |
|
| 2003 |
Archer M, Christophersen M, Fauchet PM, Persaud D, Hirschman KD. Electrical Porous Silicon Microarray for dna Hybridization Detection Mrs Proceedings. 782. DOI: 10.1557/PROC-782-A7.2 |
0.591 |
|
| 2003 |
Archer M, Christophersen M, Fauchet PM, Persaud D, Hirschman KD. Electrical porous silicon microarray for DNA hybridization detection Materials Research Society Symposium - Proceedings. 782: 385-391. DOI: 10.1557/Proc-782-A7.2 |
0.632 |
|
| 2003 |
Striemer CC, Fauchet PM. Exploiting silicon porosity gradients for superior antireflective films Materials Research Society Symposium - Proceedings. 737: 661-666. DOI: 10.1557/Proc-737-F8.5 |
0.367 |
|
| 2003 |
Weiss SM, Haurylau M, Fauchet PM. Tunable porous silicon mirrors for optoelectronic applications Materials Research Society Symposium - Proceedings. 737: 529-534. DOI: 10.1557/Proc-737-F3.50 |
0.806 |
|
| 2003 |
Fauchet PM. The role of nanoscale silicon in optical interconnects Materials Research Society Symposium - Proceedings. 737: 789-799. DOI: 10.1557/Proc-737-F11.4 |
0.426 |
|
| 2003 |
Krishnan R, Krauss TD, Fauchet PM. Charge retention in single silicon nanocrystal layers Materials Research Society Symposium - Proceedings. 737: 253-258. DOI: 10.1557/Proc-737-F1.3 |
0.655 |
|
| 2003 |
Ruan J, Fauchet PM, Dal Negro L, Cazzanelli M, Pavesi L. Stimulated emission in nanocrystalline silicon superlattices Applied Physics Letters. 83: 5479-5481. DOI: 10.1063/1.1637720 |
0.476 |
|
| 2003 |
Weiss SM, Molinari M, Fauchet PM. Temperature stability for silicon-based photonic band-gap structures Applied Physics Letters. 83: 1980-1982. DOI: 10.1063/1.1609249 |
0.42 |
|
| 2003 |
Ruan J, Chen H, Fauchet PM. Optical amplification in nanocrystalline silicon superlattices Materials Research Society Symposium - Proceedings. 737: 407-412. DOI: 10.1007/978-94-010-0149-6_19 |
0.658 |
|
| 2003 |
Archer M, Fauchet PM. Electrical sensing of DNA hybridization in porous silicon layers Physica Status Solidi (a) Applied Research. 198: 503-507. DOI: 10.1002/Pssa.200306641 |
0.644 |
|
| 2003 |
Weiss SM, Fauchet PM. Electrically tunable porous silicon active mirrors Physica Status Solidi (a) Applied Research. 197: 556-560. DOI: 10.1002/Pssa.200306562 |
0.406 |
|
| 2003 |
Striemer CC, Fauchet PM. Dynamic etching of silicon for solar cell applications Physica Status Solidi (a) Applied Research. 197: 502-506. DOI: 10.1002/Pssa.200306553 |
0.411 |
|
| 2003 |
Archer M, Christophersen M, Fauchet PM. Porous silicon electrical biosensors Materials Research Society Symposium - Proceedings. 737: 549-554. |
0.604 |
|
| 2002 |
Striemer CC, Krishnan R, Xie Q, Tsybeskov L, Fauchet PM. Periodic Two-dimensional Arrays of Silicon Quantum Dots for Nanoscale Device Applications Mrs Proceedings. 737. DOI: 10.1557/Proc-737-F3.27 |
0.762 |
|
| 2002 |
Weiss SM, Fauchet PM. Electrically tunable silicon-based mirrors Proceedings of Spie - the International Society For Optical Engineering. 4654: 36-44. DOI: 10.1117/12.463855 |
0.338 |
|
| 2002 |
Striemer CC, Fauchet PM. Dynamic etching of silicon for broadband antireflection applications Applied Physics Letters. 81: 2980-2982. DOI: 10.1063/1.1514832 |
0.418 |
|
| 2002 |
Lugo JE, Lopez HA, Chan S, Fauchet PM. Porous silicon multilayer structures: A photonic band gap analysis Journal of Applied Physics. 91: 4966-4972. DOI: 10.1063/1.1461898 |
0.83 |
|
| 2002 |
Rao PN, Schiff EA, Tsybeskov L, Fauchet P. Photocarrier drift-mobility measurements and electron localization in nanoporous silicon Chemical Physics. 284: 129-138. DOI: 10.1016/S0301-0104(02)00544-X |
0.614 |
|
| 2002 |
Lockwood DJ, Grom GF, Fauchet PM, Tsybeskov L. Ordering and self-organized growth of Si in the Si/SiO2 superlattice system Journal of Crystal Growth. 237: 1898-1903. DOI: 10.1016/S0022-0248(01)02213-8 |
0.82 |
|
| 2001 |
Chan S, Horner SR, Fauchet PM, Miller BL. Identification of Gram negative bacteria using nanoscale silicon microcavities. Journal of the American Chemical Society. 123: 11797-8. PMID 11716737 DOI: 10.1021/Ja016555R |
0.6 |
|
| 2001 |
Striemer CC, Fauchet PM, Tsybeskov L. Lateral superlattices fabricated with interferometric lithography for nanoscale device applications Materials Research Society Symposium - Proceedings. 638. DOI: 10.1557/Proc-638-F5.13.1 |
0.596 |
|
| 2001 |
Hirschman KD, Fauchet PM. Modeling carrier transport in oxide-passivated nanocrystalline silicon leds Materials Research Society Symposium - Proceedings. 638. DOI: 10.1557/Proc-638-F18.4.1 |
0.361 |
|
| 2001 |
Tsybeskov L, Grom GF, Krishnan R, Montes L, Fauchet PM, Kovalev D, Diener J, Timoshenko V, Koch F, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ, Niquet YM, Delerue C, et al. Resonant tunneling in partially disordered silicon nanostructures Europhysics Letters. 55: 552-558. DOI: 10.1209/Epl/I2001-00451-1 |
0.82 |
|
| 2001 |
Wolkin MV, Chan S, Fauchet PM. Nanoscale light modulators from silicon-liquid crystal hybrids Proceedings of Spie - the International Society For Optical Engineering. 4293: 23-31. DOI: 10.1117/12.426940 |
0.328 |
|
| 2001 |
Fauchet P. Silicon lasers start to take shape Physics World. 14: 19-20. DOI: 10.1088/2058-7058/14/2/24 |
0.465 |
|
| 2001 |
Striemer CC, Krishnan R, Fauchet PM, Tsybeskov L, Xie Q. Controlled Nucleation of Silicon Nanocrystals on a Periodic Template Nano Letters. 1: 643-646. DOI: 10.1021/Nl015599V |
0.754 |
|
| 2001 |
Lockwood DJ, Grom GF, Tsybeskov L, Fauchet PM, Labbé HJ, McCaffrey JP, White B. J. Self-organization and ordering in nanocrystalline Si/SiO2 superlattices Physica E: Low-Dimensional Systems and Nanostructures. 11: 99-103. DOI: 10.1016/S1386-9477(01)00183-7 |
0.824 |
|
| 2001 |
Chan S, Li Y, Rothberg LJ, Miller BL, Fauchet PM. Nanoscale silicon microcavities for biosensing Materials Science and Engineering C. 15: 277-282. DOI: 10.1016/S0928-4931(01)00219-3 |
0.668 |
|
| 2001 |
Chan S, Fauchet PM. Silicon microcavity light emitting devices Optical Materials. 17: 31-34. DOI: 10.1016/S0925-3467(01)00016-7 |
0.667 |
|
| 2001 |
Ye H, Wicks GW, Fauchet PM. Electron and hole dynamics in GaN Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 82: 131-133. DOI: 10.1016/S0921-5107(00)00768-6 |
0.304 |
|
| 2001 |
Lopez HA, Fauchet PM. Infrared LEDs and microcavities based on erbium-doped silicon nanocomposites Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 81: 91-96. DOI: 10.1016/S0921-5107(00)00744-3 |
0.796 |
|
| 2000 |
Grom GF, Lockwood DJ, McCaffrey JP, Labbe HJ, Fauchet PM, White B, Diener J, Kovalev D, Koch F, Tsybeskov L. Ordering and self-organization in nanocrystalline silicon Nature. 407: 358-61. PMID 11014187 DOI: 10.1038/35030062 |
0.829 |
|
| 2000 |
Grom GF, Fauchet PM, Tsybeskov L, McCaffrey JP, Labbé HJ, Lockwood DJ, White BE. Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F6.1.1 |
0.826 |
|
| 2000 |
Krishnan R, Grom G, Fauchet P, Tsybeskov L, Papernov S, Sproule G, Lockwood D. Atomic force microscopy and Raman spectroscopy of nanoscale Si/SiO2superlattices. Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.4.1 |
0.822 |
|
| 2000 |
Kim HB, Montes L, Krishnan R, Fauchet PM, Tsybeskov L. Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.12.1 |
0.724 |
|
| 2000 |
Zollner S, Konkar A, Liu R, Yapa H, Dryer PF, Neeley VA, Xie Q, Grom GF, Zhu Q, Krishnan R, Fauchet PM, Tsybeskov LV. Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.1.1 |
0.818 |
|
| 2000 |
Montès L, Grom GF, Krishnan R, Fauchet PM, Tsybeskov L, White BE. A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F2.3.1 |
0.827 |
|
| 2000 |
Lopez HA, Lugo JE, Chan S, Weiss SM, Striemer CC, Fauchet PM. Erbium Emission from Silicon Based Photonic Bandgap Materials Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F17.2.1 |
0.813 |
|
| 2000 |
Chan S, Horner SR, Miller BL, Fauchet PM. Nanoscale Silicon Microcavity Optical Sensors for Biological Applications Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F10.4.1 |
0.623 |
|
| 2000 |
Lugo JE, Lopez HA, Chan S, Fauchet PM. Tunable Porous Silicon Photonic Band Gap Structures Mrs Proceedings. 637. DOI: 10.1557/Proc-637-E4.6 |
0.827 |
|
| 2000 |
Koyama H, Fauchet PM. Laser-induced thermal effects on the optical properties of free-standing porous silicon films Journal of Applied Physics. 87: 1788-1794. DOI: 10.1063/1.372093 |
0.353 |
|
| 2000 |
Lopez HA, Fauchet PM. Erbium emission from porous silicon one-dimensional photonic band gap structures Applied Physics Letters. 77: 3704-3706. DOI: 10.1063/1.1331082 |
0.785 |
|
| 2000 |
Koyama H, Fauchet PM. Anisotropic polarization memory in thermally oxidized porous silicon Applied Physics Letters. 77: 2316-2318. DOI: 10.1063/1.1316068 |
0.356 |
|
| 2000 |
Ye H, Wicks GW, Fauchet PM. Hot hole relaxation dynamics in p-GaN Applied Physics Letters. 77: 1185-1187. DOI: 10.1063/1.1289651 |
0.322 |
|
| 2000 |
Von Behren J, Wolkin-Vakrat M, Jorné J, Fauchet P. Journal of Porous Materials. 7: 81-84. DOI: 10.1023/A:1009663210016 |
0.622 |
|
| 2000 |
Petrovich V, Volchek S, Dolgyi L, Kazuchits N, Yakovtseva V, Bondarenko V, Tsybeskov L, Fauchet P. Journal of Porous Materials. 7: 37-40. DOI: 10.1023/A:1009647903656 |
0.564 |
|
| 2000 |
Tsybeskov L, Grom GF, Jungo M, Montes L, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ. Nanocrystalline silicon superlattices: Building blocks for quantum devices Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 69: 303-308. DOI: 10.1016/S0921-5107(99)00292-5 |
0.826 |
|
| 2000 |
Zacharias M, Bläsing J, Hirschman K, Tsybeskov L, Fauchet PM. Extraordinary crystallization of amorphous Si/SiO2 superlattices Journal of Non-Crystalline Solids. 640-644. DOI: 10.1016/S0022-3093(00)00033-8 |
0.673 |
|
| 2000 |
Wolkin MV, Chan S, Fauchet PM. Porous silicon encapsulated nematic liquid crystals for electro-optic applications Physica Status Solidi (a) Applied Research. 182: 573-578. DOI: 10.1002/1521-396X(200011)182:1<573::Aid-Pssa573>3.0.Co;2-G |
0.643 |
|
| 2000 |
Chan S, Fauchet PM, Li Y, Rothberg LJ, Miller BL. Porous silicon microcavities for biosensing applications Physica Status Solidi (a) Applied Research. 182: 541-546. DOI: 10.1002/1521-396X(200011)182:1<541::Aid-Pssa541>3.0.Co;2-# |
0.627 |
|
| 2000 |
Lopez HA, Fauchet PM. 1.54 μm electroluminescence from erbium-doped porous silicon composites for photonic applications Physica Status Solidi (a) Applied Research. 182: 413-418. DOI: 10.1002/1521-396X(200011)182:1<413::Aid-Pssa413>3.0.Co;2-7 |
0.781 |
|
| 2000 |
Grom GF, Fauchet PM, Tsybeskov L. Quantum confinement in nanocrystalline Si superlattices Materials Research Society Symposium - Proceedings. 592: 363-368. |
0.814 |
|
| 1999 |
Grom GF, Fauchet PM, Tsybeskov L, Mccaffrey JP, Labbé HJ, Lockwood DJ. Quantum Confinement in Nanocrystalline Superlattices Mrs Proceedings. 592: 363. DOI: 10.1557/Proc-592-363 |
0.752 |
|
| 1999 |
Tsybeskov L, Grom GF, Krishnan R, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ, Timoshenko V, Diener J, Heckler H, Kovalev D, Koch F, Blanton TN. Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices Mrs Proceedings. 588. DOI: 10.1557/Proc-588-173 |
0.837 |
|
| 1999 |
Koyama H, Fauchet PM. Strongly superlinear light emission and large induced absorption in oxidized porous silicon films Materials Research Society Symposium - Proceedings. 536: 9-14. DOI: 10.1557/Proc-536-9 |
0.381 |
|
| 1999 |
Chan S, Tsybeskov L, Fauchet PM. Porous silicon multilayer mirrors and microcavity resonators for optoelectronic applications Materials Research Society Symposium - Proceedings. 536: 117-122. DOI: 10.1557/Proc-536-117 |
0.771 |
|
| 1999 |
Wolkin MV, Jorne J, Fauchet PM, Allan G, Delerue C. Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen Physical Review Letters. 82: 197-200. DOI: 10.1103/Physrevlett.82.197 |
0.651 |
|
| 1999 |
Rodney PJ, Marchetti AP, Fauchet PM. Low temperature photophysics of AgI micro and nanocrystals Radiation Effects and Defects in Solids. 150: 327-332. DOI: 10.1080/10420159908226252 |
0.314 |
|
| 1999 |
Lopez HA, Fauchet PM. Room-temperature electroluminescence from erbium-doped porous silicon Applied Physics Letters. 75: 3989-3991. DOI: 10.1063/1.125515 |
0.77 |
|
| 1999 |
Tsybeskov L, Grom GF, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices Applied Physics Letters. 75: 2265-2267. DOI: 10.1063/1.124985 |
0.821 |
|
| 1999 |
Chan S, Fauchet PM. Tunable, narrow, and directional luminescence from porous silicon light emitting devices Applied Physics Letters. 75: 274-276. DOI: 10.1063/1.124346 |
0.636 |
|
| 1999 |
Zacharias M, Bläsing J, Veit P, Tsybeskov L, Hirschman K, Fauchet PM. Thermal crystallization of amorphous Si/SiO2 superlattices Applied Physics Letters. 74: 2614-2616. DOI: 10.1063/1.123914 |
0.669 |
|
| 1998 |
Bondarenko V, Vorozov N, Dolgyi L, Yakovtseva V, Petrovich V, Volchek S, Kazuchits N, Grom G, Lopez HA, Tsybeskov L, Fauchet PM. Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure Mrs Proceedings. 536. DOI: 10.1557/Proc-536-69 |
0.808 |
|
| 1998 |
Striemer CC, Chan S, Lopez HA, Hirschman KD, Koyama H, Zhu Q, Tsybeskov L, Fauchet PM, Kalkhoran NM, Depaulis L. Leds Based on Oxidized Porous Polysilicon on a Transparent Substrate Mrs Proceedings. 536. DOI: 10.1557/Proc-536-511 |
0.816 |
|
| 1998 |
Montès L, Tsybeskov L, Fauchet PM, Pangal K, Sturm JC, Wagner S. Optical Analysis of Plasma Enhanced Crystallization of Amorphous Silicon Films Mrs Proceedings. 536. DOI: 10.1557/Proc-536-505 |
0.649 |
|
| 1998 |
Hirschman KD, Tsybeskov L, Striemer CC, Chan S, Fauchet PM. Integration of Electrically Isolated Porous Silicon Leds for Applications in CMOS Technology Mrs Proceedings. 536. DOI: 10.1557/PROC-536-21 |
0.316 |
|
| 1998 |
Wolkin M, Jorne J, Fauchet P, Allan G, Delerue C. Modification of Visible Light Emission from Silicon Nanocrystals as a Function of Size, Electronic Structure, and Surface Passivation Mrs Proceedings. 536. DOI: 10.1557/Proc-536-185 |
0.454 |
|
| 1998 |
Grom GF, Tsybeskov L, Hirschman KD, Fauchet PM, McCaffrey JP, Labbé HJ, Lockwood DJ. Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment Mrs Proceedings. 536. DOI: 10.1557/Proc-536-141 |
0.821 |
|
| 1998 |
Lopez HA, Chan S, Tsybeskov L, Koyama H, Bondarenko VP, Fauchet PM. Integration of Multilayers in Er-Doped Porous Silicon Structures and Advances in 1.5 μm Optoelectronic Devices Mrs Proceedings. 536. DOI: 10.1557/Proc-536-135 |
0.817 |
|
| 1998 |
Tsybeskov L, Grom GF, Hirschman KD, Lopez HA, Chan S, Fauchet PM, Bondarenko VP. Er-doped porous silicon led for integrated optoelectronics Materials Research Society Symposium - Proceedings. 486: 145-150. DOI: 10.1557/Proc-486-145 |
0.816 |
|
| 1998 |
Fauchet PM, Tsybeskov L. Nanoscale silicon for electroluminescent devices Proceedings of Spie - the International Society For Optical Engineering. 3283: 793-807. DOI: 10.1117/12.316733 |
0.698 |
|
| 1998 |
Fauchet PM. Progress toward nanoscale silicon light emitters Ieee Journal On Selected Topics in Quantum Electronics. 4: 1020-1028. DOI: 10.1109/2944.736103 |
0.508 |
|
| 1998 |
Koyama H, Fauchet PM. Very large continuous-wave-laser-induced optical absorption in porous silicon films: Evidence for thermal effects Applied Physics Letters. 73: 3259-3261. DOI: 10.1063/1.122737 |
0.427 |
|
| 1998 |
Tsybeskov L, Hirschman KD, Duttagupta SP, Zacharias M, Fauchet PM, McCaffrey JP, Lockwood DJ. Nanocrystalline-silicon superlattice produced by controlled recrystallization Applied Physics Letters. 72: 43-45. DOI: 10.1063/1.120640 |
0.677 |
|
| 1998 |
von Behren J, van Buuren T, Zacharias M, Chimowitz E, Fauchet P. Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence Solid State Communications. 105: 317-322. DOI: 10.1016/S0038-1098(97)10099-0 |
0.393 |
|
| 1998 |
Zacharias M, Tsybeskov L, Hirschman KD, Fauchet PM, Bläsing J, Kohlert P, Veit P. Nanocrystalline silicon superlattices: fabrication and characterization Journal of Non-Crystalline Solids. 227: 1132-1136. DOI: 10.1016/S0022-3093(98)00287-7 |
0.696 |
|
| 1998 |
Zacharias M, Fauchet PM. Light emission from Ge and GeO2 nanocrystals Journal of Non-Crystalline Solids. 227: 1058-1062. DOI: 10.1016/S0022-3093(98)00241-5 |
0.361 |
|
| 1998 |
Koyama H, Tsybeskov L, Fauchet PM. Strongly nonlinear luminescence in oxidized porous silicon films Journal of Luminescence. 80: 99-102. DOI: 10.1016/S0022-2313(98)00167-7 |
0.639 |
|
| 1998 |
Lopez HA, Linda Chen X, Jenekhe SA, Fauchet PM. Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments Journal of Luminescence. 80: 115-118. DOI: 10.1016/S0022-2313(98)00078-7 |
0.747 |
|
| 1998 |
Fauchet PM. The integration of nanoscale porous silicon light emitters: Materials science, properties, and integration with electronic circuitry Journal of Luminescence. 80: 53-64. DOI: 10.1016/S0022-2313(98)00070-2 |
0.447 |
|
| 1998 |
Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM, Zacharias M, McCaffrey JP, Lockwood DJ. Fabrication of Nanocrystalline Silicon Superlattices by Controlled Thermal Recrystallization Physica Status Solidi (a). 165: 69-77. DOI: 10.1002/(Sici)1521-396X(199801)165:1<69::Aid-Pssa69>3.0.Co;2-H |
0.64 |
|
| 1998 |
Fauchet PM, von Behren J, Hirschman KD, Tsybeskov L, Duttagupta SP. Porous Silicon Physics and Device Applications: A Status Report Physica Status Solidi (a). 165: 3-13. DOI: 10.1002/(Sici)1521-396X(199801)165:1<3::Aid-Pssa3>3.0.Co;2-T |
0.621 |
|
| 1997 |
Fauchet PM. Practical Nanoscale Silicon Light Emitters Mrs Proceedings. 486. DOI: 10.1557/Proc-486-21 |
0.443 |
|
| 1997 |
Tsybeskov L, Grom GF, Hirschman KD, Lopez HA, Chan S, Fauchet PM, Bondarenko VP. Er-Doped Porous Silicon Led For Integrated Optoelectronics Mrs Proceedings. 486. DOI: 10.1557/PROC-486-145 |
0.76 |
|
| 1997 |
Fauchet PM, Tsybeskov L, Zacharias M, Hirschman K. Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices Mrs Proceedings. 485. DOI: 10.1557/Proc-485-49 |
0.685 |
|
| 1997 |
Zacharias M, Atherton SJ, Fauchet PM. Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals Mrs Proceedings. 467: 379. DOI: 10.1557/Proc-467-379 |
0.348 |
|
| 1997 |
Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Integrating bipolar junction transistors with silicon-based light-emitting devices Materials Research Society Symposium - Proceedings. 452: 705-710. DOI: 10.1557/Proc-452-705 |
0.67 |
|
| 1997 |
Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM. Electroluminescence and carrier transport in LEDs based on silicon-rich silicon oxide Materials Research Society Symposium - Proceedings. 452: 681-686. DOI: 10.1557/Proc-452-681 |
0.689 |
|
| 1997 |
Rao P, Schiff EA, Tsybeskov L, Fauchet PM. Electron time-of-flight measurements in porous silicon Materials Research Society Symposium - Proceedings. 452: 613-618. DOI: 10.1557/Proc-452-613 |
0.595 |
|
| 1997 |
Von Behren J, Fauchet PM, Chimowitz EH, Lira CT. Optical properties of free-standing ultrahigh porosity silicon films prepared by supercritical drying Materials Research Society Symposium - Proceedings. 452: 565-570. DOI: 10.1557/Proc-452-565 |
0.427 |
|
| 1997 |
Rodney PJ, Freedhoff MI, Marchetti AP, McLendon GL, Fauchet PM. Optical properties of cuprous oxide nanocrystals Materials Research Society Symposium - Proceedings. 452: 383-388. DOI: 10.1557/Proc-452-383 |
0.346 |
|
| 1997 |
Prokes SM, Glembocki OJ, Collins RT, Fauchet PM, Tischler MA. Luminescence from Porous Silicon: Mechanism Debated Physics Today. 50: 83-83. DOI: 10.1063/1.881872 |
0.446 |
|
| 1997 |
Collins RT, Fauchet PM, Tischler MA. Porous silicon: From luminescence to leds Physics Today. 50: 24-31. DOI: 10.1063/1.881650 |
0.424 |
|
| 1997 |
Zacharias M, Fauchet PM. Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects Applied Physics Letters. 71: 380-382. DOI: 10.1063/1.119543 |
0.357 |
|
| 1997 |
Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM, Moore KL, Hall DG. Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide Applied Physics Letters. 70: 1790-1792. DOI: 10.1063/1.118693 |
0.677 |
|
| 1997 |
Fauchet PM. Chapter 6 Porous Silicon: Photoluminescence and Electroluminescent Devices Semiconductors and Semimetals. 49: 205-252. DOI: 10.1016/S0080-8784(08)62504-1 |
0.414 |
|
| 1997 |
Fauchet PM, Tsybeskov L, Duttagupta SP, Hirschman KD. Stable photoluminescence and electroluminescence from porous silicon Thin Solid Films. 297: 254-260. DOI: 10.1016/S0040-6090(96)09438-2 |
0.691 |
|
| 1997 |
Duttagupta S, Chen X, Jenekhe S, Fauchet P. Microhardness of porous silicon films and composites Solid State Communications. 101: 33-37. DOI: 10.1016/S0038-1098(96)00546-7 |
0.39 |
|
| 1997 |
Fauchet PM, Von Behren J. The strong visible luminescence in porous silicon: Quantum confinement, not oxide-related defects Physica Status Solidi (B) Basic Research. 204. DOI: 10.1002/1521-3951(199711)204:13.0.Co;2-C |
0.392 |
|
| 1997 |
Duttagupta SP, Kurinec SK, Fauchet PM. Porous microcrystalline silicon solar cells Materials Research Society Symposium - Proceedings. 452: 625-630. |
0.305 |
|
| 1997 |
Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Integration of silicon electroluminescent devices with silicon microelectronics Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 452-453. |
0.625 |
|
| 1996 |
Tsybeskov L, Hiirschman KD, Moore LF, Fauchet PM, Calcott PDJ. Preparation and Characterization of the Active Layer for an Led Based on Oxidized Porous Silicon Mrs Proceedings. 452. DOI: 10.1557/Proc-452-687 |
0.645 |
|
| 1996 |
Duttagupta SP, Kurinec SK, Fauchet PM. Porous Microcrystalline Silicon Solar Cells Mrs Proceedings. 452: 625. DOI: 10.1557/Proc-452-625 |
0.386 |
|
| 1996 |
Tsybeskov L, Moore KL, Fauchet PM, Hall DG. Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM Mrs Proceedings. 452. DOI: 10.1557/Proc-452-523 |
0.691 |
|
| 1996 |
Moore KL, Tsybeskov L, Fauchet PM, Hall DG. Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon Mrs Proceedings. 452. DOI: 10.1557/Proc-452-517 |
0.668 |
|
| 1996 |
Duttagupta SP, Fauchet PM, Chen XL, Jenekhe SA. Fabrication and Characterization of Light Emitting Porous Silicon and Polymer Nanocomposites Mrs Proceedings. 452. DOI: 10.1557/Proc-452-473 |
0.341 |
|
| 1996 |
Ribes AC, Damaskinos S, Tiedje HF, Dixon AE, Brodie DE, Duttagupta SP, Fauchet PM. A New Confocal Scanning Laser MACROscope/Microscope Applied to the Characterization of Solar Cells Mrs Proceedings. 426. DOI: 10.1557/Proc-426-581 |
0.334 |
|
| 1996 |
Tsybeskov L, Peng C, Fauchet PM, Gu Q, Schiff EA. Drift mobility measurements in porous silicon Materials Research Society Symposium - Proceedings. 420: 825-829. DOI: 10.1557/Proc-420-825 |
0.61 |
|
| 1996 |
Peng C, Hirschman KD, Fauchet PM. Carrier transport in porous silicon light-emitting devices Journal of Applied Physics. 80: 295-300. DOI: 10.1063/1.362783 |
0.364 |
|
| 1996 |
Tsybeskov L, Moore KL, Duttagupta SP, Hirschman KD, Hall DG, Fauchet PM. A Si‐based light‐emitting diode with room‐temperature electroluminescence at 1.1 eV Applied Physics Letters. 69: 3411-3413. DOI: 10.1063/1.117276 |
0.674 |
|
| 1996 |
Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Silicon-based visible light-emitting devices integrated into microelectronic circuits Nature. 384: 338-341. DOI: 10.1038/384338A0 |
0.678 |
|
| 1996 |
Rehm JM, McLendon GL, Fauchet PM. Conduction and valence band edges of porous silicon determined by electron transfer Journal of the American Chemical Society. 118: 4490-4491. DOI: 10.1021/Ja9538795 |
0.333 |
|
| 1996 |
Behren Jv, Kostoulas Y, Üçer KB, Fauchet PM. The femtosecond optical response of porous, amorphous and crystalline silicon Journal of Non-Crystalline Solids. 198200: 957-960. DOI: 10.1016/0022-3093(96)00095-6 |
0.502 |
|
| 1996 |
Xu Z, Fauchet PM, Rella CW, Schwettman HA, Tsai CC. Ultrafast excitation and de-excitation of the SiH stretching mode in a-Si:H Journal of Non-Crystalline Solids. 198200: 11-14. DOI: 10.1016/0022-3093(95)00643-5 |
0.36 |
|
| 1996 |
Fauchet PM. Photoluminescence and electroluminescence from porous silicon Journal of Luminescence. 70: 294-309. DOI: 10.1016/0022-2313(96)82860-2 |
0.445 |
|
| 1996 |
Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM. LED for silicon-based integrated optoelectronics Annual Device Research Conference Digest. 150-151. |
0.631 |
|
| 1995 |
Weng X, Kostoulas Y, Fauchet PM, Osaheni JA, Jenekhe SA. Femtosecond excited-state dynamics of a conjugated ladder polymer. Physical Review. B, Condensed Matter. 51: 6838-6841. PMID 9977236 DOI: 10.1103/Physrevb.51.6838 |
0.307 |
|
| 1995 |
Duttagupta SP, Peng C, Tsybeskov L, Fauchet PM. Manufacture of submicron light-emitting porous silicon areas for miniature LEDs Materials Research Society Symposium - Proceedings. 380: 73-78. DOI: 10.1557/Proc-380-73 |
0.685 |
|
| 1995 |
Fauchet PM, Wicks GW, Kostoulas Y, Lobad AI, Ucer KB. The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects Mrs Proceedings. 378. DOI: 10.1557/Proc-378-171 |
0.35 |
|
| 1995 |
Tsybeskov L, Duttagupta SP, Fauchet PM. Photoluminescence and electroluminescence in partially oxidized porous silicon Materials Research Society Symposium - Proceedings. 358: 683-688. DOI: 10.1557/Proc-358-683 |
0.689 |
|
| 1995 |
Rehm JM, McLendon GL, Tsybeskov L, Fauchet PM. Investigation of chemical adsorbate effects on blue and red emitting porous silicon samples Materials Research Society Symposium - Proceedings. 358: 393-398. DOI: 10.1557/Proc-358-393 |
0.642 |
|
| 1995 |
Von Behren J, Tsybeskov L, Fauchet PM. Preparation, properties and applications of free-standing porous silicon films Materials Research Society Symposium - Proceedings. 358: 333-338. DOI: 10.1557/Proc-358-333 |
0.627 |
|
| 1995 |
von Behren J, Ucer KB, Tsybeskov L, Vandyshev JV, Fauchet PM. Properties of ultrathin films of porous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1225-1229. DOI: 10.1116/1.588241 |
0.614 |
|
| 1995 |
Fauchet PM, Tsybeskov L, Peng C, Duttagupta SP, von Behren J, Kostoulas Y, Vandyshev JMV, Hirschman KD. Light-Emitting Porous Silicon: Materials Science, Properties, and Device Applications Ieee Journal On Selected Topics in Quantum Electronics. 1: 1126-1139. DOI: 10.1109/2944.488691 |
0.688 |
|
| 1995 |
Fauchet P. Greater shine for porous silicon Physics World. 8: 24-25. DOI: 10.1088/2058-7058/8/11/23 |
0.444 |
|
| 1995 |
Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM. Stable and efficient electroluminescence from a porous silicon-based bipolar device Applied Physics Letters. 2058. DOI: 10.1063/1.116302 |
0.677 |
|
| 1995 |
Kostoulas Y, Ucer KB, Wicks GW, Fauchet PM. Femtosecond carrier dynamics in low-temperature grown Ga 0.51In0.49P Applied Physics Letters. 67: 3756. DOI: 10.1063/1.115373 |
0.323 |
|
| 1995 |
Peng C, Fauchet PM. The frequency response of porous silicon electroluminescent devices Applied Physics Letters. 67: 2515. DOI: 10.1063/1.114443 |
0.382 |
|
| 1995 |
Rehm JM, McLendon GL, Tsybeskov L, Fauchet PM. How methanol affects the surface of blue and red emitting porous silicon Applied Physics Letters. 66: 3651. DOI: 10.1063/1.114135 |
0.628 |
|
| 1995 |
Ribes AC, Damaskinos S, Dixon AE, Carver GE, Peng C, Fauchet PM, Sham TK, Coulthard I. Photoluminescence imaging of porous silicon using a confocal scanning laser macroscope/microscope Applied Physics Letters. 66: 2321-2323. DOI: 10.1063/1.113969 |
0.385 |
|
| 1995 |
Von Behren J, Tsybeskov L, Fauchet PM. Preparation and characterization of ultrathin porous silicon films Applied Physics Letters. 1662. DOI: 10.1063/1.113885 |
0.662 |
|
| 1995 |
Ribes AC, Damaskinos S, Dixon AE, Ellis KA, Duttaguptat SP, Fauchet PM. Confocal imaging of porous silicon with a scanning laser macroscope/microscope Progress in Surface Science. 50: 295-304. DOI: 10.1016/0079-6816(95)00063-1 |
0.432 |
|
| 1995 |
Hummel RE, Ludwig MH, Chang SS, Fauchet PM, Vandyshev JV, Tsybeskov L. Time-resolved photoluminescence measurements in spark-processed blue and green emitting silicon Solid State Communications. 95: 553-557. DOI: 10.1016/0038-1098(95)00224-3 |
0.665 |
|
| 1995 |
Fauchet PM. Ultrafast Carrier Dynamics in Porous Silicon Physica Status Solidi (B). 190: 53-62. DOI: 10.1002/Pssb.2221900109 |
0.462 |
|
| 1995 |
Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM. Stable and efficient electroluminescence from a porous silicon-based bipolar device Applied Physics Letters. 2058. |
0.642 |
|
| 1994 |
Peng C, Fauchet PM, Hirschman KD, Kurinec SK. Carrier Transport in Porous Silicon Light-Emitting Diodes Mrs Proceedings. 358: 689. DOI: 10.1557/Proc-358-689 |
0.378 |
|
| 1994 |
Duttagupta SP, Fauchet PM, Peng C, Kurinec S, Hirschman K, Blanton TN. Micron-Size and Submicron-Size Light-Emitting Porous Silicon Structures Mrs Proceedings. 358. DOI: 10.1557/Proc-358-647 |
0.429 |
|
| 1994 |
Fauchet PM. Carrier Dynamics in Porous Silicon: from the Femtosecond to the Second Mrs Proceedings. 358. DOI: 10.1557/Proc-358-525 |
0.464 |
|
| 1994 |
Duttagupta SP, Tsybeskov L, Fauchet PM, Ettedgui E, Gao Y. Post-Anodization Implantation and CVD Techniques for Passivation of Porous Silicon Mrs Proceedings. 358. DOI: 10.1557/Proc-358-381 |
0.646 |
|
| 1994 |
Tsybeskov L, Vandyshev JV, Fauchet PM. Blue emission in porous silicon: Oxygen-related photoluminescence Physical Review B. 49: 7821-7824. DOI: 10.1103/Physrevb.49.7821 |
0.632 |
|
| 1994 |
Tsybeskov L, Fauchet PM. Correlation between photoluminescence and surface species in porous silicon: Low-temperature annealing Applied Physics Letters. 64: 1983-1985. DOI: 10.1063/1.111714 |
0.633 |
|
| 1994 |
Peng C, Fauchet PM, Rehm JM, McLendon GL, Seiferth F, Kurinec SK. Ion implantation of porous silicon Applied Physics Letters. 64: 1259-1261. DOI: 10.1063/1.110858 |
0.318 |
|
| 1993 |
Tsybeskov L, Peng C, Duttagupta S, Ettedgui E, Gao Y, Fauchet P, Carver G. Comparative Study of Light-Emitting Porous Silicon Anodized with Light Assistance and in the Dark Mrs Proceedings. 298. DOI: 10.1557/Proc-298-307 |
0.659 |
|
| 1993 |
Fauchet P, Ettedgui E, Raisanen A, Brillson L, Seiferth F, Kurinec S, Gao Y, Peng C, Tsybeskov L. Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon? Mrs Proceedings. 298. DOI: 10.1557/Proc-298-271 |
0.627 |
|
| 1993 |
Peng C, Tsybeskov L, Fauchet PM, Seiferth F, Kurinec SK, Rehm JM, McLendon GL. Light-emitting porous silicon after standard microelectronic processing Materials Research Society Symposium Proceedings. 298: 179-184. DOI: 10.1557/Proc-298-179 |
0.628 |
|
| 1993 |
Peng C, Tsybeskov L, Fauchet PM. Luminescence properties of porous silicon Materials Research Society Symposium Proceedings. 283: 121-126. DOI: 10.1557/Proc-283-121 |
0.641 |
|
| 1993 |
Gong T, Kostoulas Y, Zheng LX, Xiong W, Kula W, Sobolewski R, Fauchet PM. Femtosecond optical nonlinearities in YBa2Cu3O7-x Proceedings of Spie. 1861: 355-362. DOI: 10.1117/12.147068 |
0.3 |
|
| 1993 |
Tousley BC, Mehta SM, Lobad AI, Rodney PJ, Fauchet PM, Cooke P. Femtosecond optical response of low temperature grown In0.53Ga0.47As Journal of Electronic Materials. 22: 1477-1480. DOI: 10.1007/Bf02650002 |
0.307 |
|
| 1992 |
Ettedgui E, Peng C, Tsybeskov L, Gao Y, Fauchet PM, Carver GE, Mizes HA. High Spatial Resolution Mapping of Porous Silicon Mrs Proceedings. 283. DOI: 10.1557/Proc-283-173 |
0.605 |
|
| 1992 |
Fauchet P, Vanderhaghen R, Mourchid A, Hulin D. The Extended State Mobility in Amorphous Silicon Alloys Mrs Proceedings. 258. DOI: 10.1557/Proc-258-711 |
0.376 |
|
| 1992 |
Fauchet PM, Hulin D, Mourchid A, Vanderhaghen R. Ultrafast thermal nonlinearities in amorphous silicon Semiconductors. 1677: 174-183. DOI: 10.1117/12.137681 |
0.363 |
|
| 1992 |
Mourchid A, Hulin D, Vanderhaghen R, Fauchet PM. Hot carrier relaxation and recombination in amorphous semiconductors Semiconductor Science and Technology. 7: B302-B304. DOI: 10.1088/0268-1242/7/3B/075 |
0.407 |
|
| 1992 |
Fauchet P, Hulin D, Vanderhaghen R, Mourchid A, Nighan W. The properties of free carriers in amorphous silicon Journal of Non-Crystalline Solids. 141: 76-87. DOI: 10.1016/S0022-3093(05)80521-6 |
0.413 |
|
| 1991 |
Fauchet PM, Young DA, Nighan WL, Fortmann CM. Picosecond Carrier Dynamics in aSi0.5Ge0 5: H Measured with a Free-Electron Laser Ieee Journal of Quantum Electronics. 27: 2714-2717. DOI: 10.1109/3.104152 |
0.3 |
|
| 1991 |
Gong T, Fauchet PM, Young JF, Kelly PJ. Femtosecond gain dynamics due to initial thermalization of hot carriers injected at 2 eV in GaAs Physical Review B. 44: 6542-6545. DOI: 10.1103/Physrevb.44.6542 |
0.309 |
|
| 1991 |
Gong T, Mertz P, Nighan WL, Fauchet PM. Femtosecond refractive‐index spectral hole burning in intrinsic and doped GaAs Applied Physics Letters. 59: 721-723. DOI: 10.1063/1.105376 |
0.301 |
|
| 1991 |
Vanderhaghen R, Mourchid A, Hulin D, Young DA, Nighan WL, Fauchet PM. The mechanism of subnanosecond carrier recombination in a-Si:H Journal of Non-Crystalline Solids. 543-546. DOI: 10.1016/S0022-3093(05)80175-9 |
0.353 |
|
| 1991 |
Hulin D, Mourchid A, Fauchet PM, Nighan WL, Vanderhagen R. Femtosecond thermalization processes in a-Si:H Journal of Non-Crystalline Solids. 527-530. DOI: 10.1016/S0022-3093(05)80171-1 |
0.349 |
|
| 1990 |
Mourchid A, Vanderhaghen R, Hulin D, Fauchet PM. Femtosecond energy transfer in a-Si:H Physical Review B. 42: 7667-7670. DOI: 10.1103/Physrevb.42.7667 |
0.322 |
|
| 1990 |
Campbell IH, Fauchet PM, Lyon SA, Nemanich RJ. Photoluminescence above the Tauc gap in a-Si:H Physical Review B. 41: 9871-9879. DOI: 10.1103/Physrevb.41.9871 |
0.349 |
|
| 1990 |
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S. Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen Journal of Applied Physics. 67: 1757-1760. DOI: 10.1063/1.345600 |
0.379 |
|
| 1990 |
Campbell IH, Fauchet PM. cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation Applied Physics Letters. 57: 10-12. DOI: 10.1063/1.103564 |
0.33 |
|
| 1990 |
Mourchid A, Hulin D, Vanderhaghen R, Nighan W, Gzara K, Fauchet P. Femtosecond spectroscopic determination of the properties of free carriers in a-Si:H Solid State Communications. 74: 1197-1200. DOI: 10.1016/0038-1098(90)90305-U |
0.36 |
|
| 1989 |
Fortmann C, Albright D, Campbell I, Fauchet P. The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys Mrs Proceedings. 164. DOI: 10.1557/Proc-164-315 |
0.42 |
|
| 1989 |
Okada Y, Campbell IH, Fauchet PM, Wagner S. Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD Mrs Proceedings. 164. DOI: 10.1557/Proc-164-15 |
0.38 |
|
| 1989 |
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S. a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge Mrs Proceedings. 149. DOI: 10.1557/Proc-149-93 |
0.383 |
|
| 1989 |
Fauchet PM, Hulin D. Ultrafast carrier relaxation in hydrogenated amorphous silicon Journal of the Optical Society of America B: Optical Physics. 6: 1024-1029. DOI: 10.1364/Josab.6.001024 |
0.411 |
|
| 1989 |
Fauchet PM. Enhanced Sensitivity of Time-Resolved Reflectivity Measurements Near Brewster's Angle Ieee Journal of Quantum Electronics. 25: 1072-1078. DOI: 10.1109/3.28002 |
0.355 |
|
| 1989 |
Okada Y, Chen J, Campbell I, Fauchet P, Wagner S. Mechanism of microcrystalline silicon growth from silicon tetrafluoride and hydrogen Journal of Non-Crystalline Solids. 114: 816-818. DOI: 10.1016/0022-3093(89)90730-8 |
0.411 |
|
| 1989 |
Saxena N, Albright DE, Fortmann CM, Fraser Russell TW, Fauchet PM, Campbell IH. Temperature dependence of H radical etching in the deposition of microcrystalline silicon alloy thin films by HG-sensitized photo-CVD Journal of Non-Crystalline Solids. 114: 801-803. DOI: 10.1016/0022-3093(89)90725-4 |
0.327 |
|
| 1989 |
Mourchid A, Vanderhaghen R, Hulin D, Tanguy C, Fauchet P. Femtosecond optical spectroscopy in a-Si:H and its alloys Journal of Non-Crystalline Solids. 114: 582-584. DOI: 10.1016/0022-3093(89)90657-1 |
0.37 |
|
| 1989 |
Fauchet P, Mourchid A, Hulin D, Tanguy C, Vanderhaghen R. Extended state mobility in a-Si:H measured by femtosecond spectroscopy Journal of Non-Crystalline Solids. 114: 564-566. DOI: 10.1016/0022-3093(89)90651-0 |
0.358 |
|
| 1989 |
Fauchet PM, Campbell IH, Lyon SA, Nemanich RJ. Luminescence above the Tauc gap in a-Si:H Journal of Non-Crystalline Solids. 114: 277-279. DOI: 10.1016/0022-3093(89)90136-1 |
0.347 |
|
| 1988 |
Maruyama A, Shen DS, Chu V, Liu JZ, Jaroker J, Campbell I, Fauchet PM, Wagner S. Surface Condition in the Plasma-CVD of a-Si:H,F from SiF4 and H2 Mrs Proceedings. 131. DOI: 10.1557/Proc-131-203 |
0.305 |
|
| 1988 |
Fauchet PM, Li KD. Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase Mrs Proceedings. 100. DOI: 10.1557/Proc-100-477 |
0.315 |
|
| 1988 |
Trimble LE, Celler GK, Schimmel DG, Lu CY, Nakahara S, Fauchet PM. The nature of residual stress, defects, and device characteristics for thick single-crystalline Si films on oxidized Si wafers Journal of Materials Research. 3: 514-520. DOI: 10.1557/Jmr.1988.0514 |
0.434 |
|
| 1988 |
Fauchet PM, Campbell IH. Raman spectroscopy of low-dimensional semiconductors Critical Reviews in Solid State and Materials Sciences. 14: s79-s101. DOI: 10.1080/10408438808244783 |
0.326 |
|
| 1988 |
Kolodzey J, Schwarz R, Aljishi S, Chu V, Shen DS, Fauchet PM, Wagner S. Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Applied Physics Letters. 52: 477-479. DOI: 10.1063/1.99449 |
0.396 |
|
| 1988 |
Bambha NK, Nighan WL, Campbell IH, Fauchet PM, Johnson NM. Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity Journal of Applied Physics. 63: 2316-2321. DOI: 10.1063/1.341047 |
0.358 |
|
| 1988 |
Tanguy C, Hulin D, Mourchid A, Fauchet PM, Wagner S. Free‐carrier and temperature effects in amorphous silicon thin films Applied Physics Letters. 53: 880-882. DOI: 10.1063/1.100102 |
0.404 |
|
| 1988 |
Fauchet PM, Gzara K. Determination of Carrier‐Carrier and Carrier‐Phonon Relaxation Times from Ultrafast Photoinduced Absorption in Amorphous Semiconductors Physica Status Solidi (B). 148: K71-K75. DOI: 10.1002/Pssb.2221480156 |
0.301 |
|
| 1987 |
Bambha NK, Nighan WL, Campbell IH, Fauchet PM, Johnson NM. Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films Mrs Proceedings. 106. DOI: 10.1557/Proc-106-323 |
0.367 |
|
| 1987 |
Li KD, Fauchet PM. Drude parameters of liquid silicon at the melting temperature Applied Physics Letters. 51: 1747-1749. DOI: 10.1063/1.98511 |
0.369 |
|
| 1987 |
Campbell I, Fauchet P, Lee E, Awal M. Raman microprobe study of silicon- and germanium- on-insulator structures Thin Solid Films. 154: 249-255. DOI: 10.1016/0040-6090(87)90369-5 |
0.388 |
|
| 1987 |
Li KD, Fauchet PM. Picosecond determination of the dielectric function of liquid silicon at 1064 nm Solid State Communications. 61: 207-209. DOI: 10.1016/0038-1098(87)90032-9 |
0.374 |
|
| 1987 |
Fauchet PM, Li KD. The dielectric function of laser-produced molten Si Journal of Non-Crystalline Solids. 97: 1267-1270. DOI: 10.1016/0022-3093(87)90303-6 |
0.35 |
|
| 1987 |
Fauchet PM, Hulin D, Migus A, Antonetti A, Conde JP, Wagner S. Femtosecond spectroscopy in amorphous silicon and silicon-germanium alloys Journal of Non-Crystalline Solids. 145-148. DOI: 10.1016/0022-3093(87)90034-2 |
0.379 |
|
| 1986 |
Conde JP, Shen D, Campbell IH, Fauchet PM, Wagner S. The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces Mrs Proceedings. 77. DOI: 10.1557/Proc-77-629 |
0.399 |
|
| 1986 |
Shen DS, Kolodzey J, Slobodin D, Conde JP, Lane C, Campbell IH, Fauchet PM, Wagner S. Microcrystallinity in α-Si, Ge:H, F Alloys Mrs Proceedings. 70. DOI: 10.1557/Proc-70-301 |
0.399 |
|
| 1986 |
Siegman AE, Fauchet PM. Stimulated Wood's Anomalies on Laser-Illuminated Surfaces Ieee Journal of Quantum Electronics. 22: 1384-1403. DOI: 10.1109/Jqe.1986.1073133 |
0.516 |
|
| 1986 |
Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6 |
0.366 |
|
| 1986 |
Fauchet PM, Siegman AE. SURFACE DAMAGE MECHANISMS IN NONTRANSPARENT MEDIA. National Bureau of Standards, Special Publication. 147-153. |
0.426 |
|
| 1985 |
Fauchet PM, Siegman AE. LASER-INDUCED SURFACE RIPPLES: WHAT IS UNDERSTOOD AND WHAT IS NOT. Materials Research Society Symposia Proceedings. 35: 199-204. DOI: 10.1557/Proc-35-199 |
0.502 |
|
| 1985 |
Kolodzey J, Slobodin D, Aljishi S, Quinlan S, Schwarz R, Shen DS, Fauchet PM, Wagner S. Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges Journal of Non-Crystalline Solids. 77: 897-900. DOI: 10.1016/0022-3093(85)90805-1 |
0.311 |
|
| 1985 |
Fauchet PM, Siegman AE. ULTRAFAST SPECTROSCOPY OF VERY DENSE AND HOT ELECTRON-HOLE PLASMAS IN CRYSTALLINE AND AMORPHIZED SEMICONDUCTORS. . 1501-1504. |
0.483 |
|
| 1984 |
Fauchet PM, Siegman AE. TWO-COLOR PICOSECOND MEASUREMENTS ON ELECTRON-HOLE PLASMAS CLOSE TO THE MELTING PHASE TRANSITION. Materials Research Society Symposia Proceedings. 23: 63-68. DOI: 10.1557/Proc-23-63 |
0.492 |
|
| 1984 |
Fauchet PM, Siegman AE. Student scientific conferences [7] Science. 223: 1354. |
0.397 |
|
| 1984 |
Fauchet PM, Siegman AE. LASER-INDUCED SURFACE RIPPLES: RECENT DEVELOPMENTS. . 41-42. |
0.425 |
|
| 1983 |
Fauchet PM, Guosheng Z, Siegman AE. PICOSECOND LASER-INDUCED SURFACE TRANSFORMATIONS IN SOLIDS. Materials Research Society Symposia Proceedings. 13: 205-210. DOI: 10.1557/Proc-13-205 |
0.494 |
|
| 1983 |
Fauchet PM, Siegman AE. Evidence for a dense electron-hole plasma close to the melting phase transition in silicon Applied Physics Letters. 43: 1043-1045. DOI: 10.1063/1.94229 |
0.556 |
|
| 1983 |
Fauchet PM, Siegman AE. Observations of higher-order laser-induced surface ripples on 〈111〉 germanium Applied Physics a Solids and Surfaces. 32: 135-140. DOI: 10.1007/Bf00616609 |
0.532 |
|
| 1982 |
Guosheng Z, Fauchet PM, Siegman AE. Growth of spontaneous periodic surface structures on solids during laser illumination Physical Review B. 26: 5366-5381. DOI: 10.1103/Physrevb.26.5366 |
0.51 |
|
| 1982 |
Fauchet PM, Siegman AE. Surface ripples on silicon and gallium arsenide under picosecond laser illumination Applied Physics Letters. 40: 824-826. DOI: 10.1063/1.93274 |
0.528 |
|
| 1982 |
Fauchet PM, Guosheng Z, Siegman AE. PERIODIC RIPPLE STRUCTURES ON SEMICONDUCTORS UNDER PICOSECOND PULSE ILLUMINATION. Springer Series in Chemical Physics. 23: 376-379. |
0.454 |
|
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