Gajanan Dessai, Ph.D. - Publications
Affiliations: | 2012 | Electrical Engineering | Arizona State University, Tempe, AZ, United States |
Area:
General Engineering, Electronics and Electrical EngineeringYear | Citation | Score | |||
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2012 | Dessai G, Gildenblat G. Approximate closed-form solution of ambipolar input voltage equation for the common-gate symmetric FinFET Solid-State Electronics. 75: 77-80. DOI: 10.1016/J.Sse.2012.04.036 | 0.577 | |||
2011 | Dessai G, Gildenblat G. Inclusion of the accumulation region in the compact models of bulk and SOI FinFETs Ieee Transactions On Electron Devices. 58: 2644-2651. DOI: 10.1109/Ted.2011.2157925 | 0.599 | |||
2010 | Dessai G, Wu W, Gildenblat G. Compact charge model for independent-gate asymmetric DGFET Ieee Transactions On Electron Devices. 57: 2106-2115. DOI: 10.1109/Ted.2010.2054470 | 0.602 | |||
2010 | Dessai G, Gildenblat G. Solution space for the independent-gate asymmetric DGFET Solid-State Electronics. 54: 382-384. DOI: 10.1016/J.Sse.2009.12.028 | 0.543 | |||
2010 | Dessai G, Wu W, Bakkaloglu B, McAndrew CC, Gildenblat G. Compact model and circuit simulations for asymmetric, independent gate FinFETs Journal of Computational Electronics. 9: 103-107. DOI: 10.1007/S10825-010-0312-0 | 0.584 | |||
2009 | Dessai G, Dey A, Gildenblat G, Smit GDJ. Corrigendum to "Symmetric linearization method for double-gate and surrounding-gate MOSFET models" [Solid State Electronics 53(5) (2009) 548-556] (DOI:10.1016/j.sse.2009.01.020) Solid-State Electronics. 53: 1209. DOI: 10.1016/J.Sse.2009.06.010 | 0.561 | |||
2009 | Dessai G, Dey A, Gildenblat G, Smit GDJ. Symmetric linearization method for double-gate and surrounding-gate MOSFET models Solid-State Electronics. 53: 548-556. DOI: 10.1016/J.Sse.2009.01.020 | 0.622 | |||
2009 | Dessai G, Wu W, Bakkaloglu B, McAndrew CC, Gildenblat G. Compact model and circuit simulations for asymmetric, independent gate FinFETs Journal of Computational Electronics. 8: 103-107. | 0.446 | |||
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