Saptarshi Das, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Nanoscience, Materials Science Engineering, Electronics and Electrical Engineering

10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Das S. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current. Scientific Reports. 6: 34811. PMID 27721489 DOI: 10.1038/srep34811  0.48
2015 Bhimanapati GR, Lin Z, Meunier V, Jung Y, Cha JJ, Das S, Xiao D, Son Y, Strano MS, Cooper VR, Liang L, Louie SG, Ringe E, Zhou W, Sumpter BG, et al. Recent Advances in Two-Dimensional Materials Beyond Graphene. Acs Nano. PMID 26544756 DOI: 10.1021/acsnano.5b05556  1
2014 Das S, Demarteau M, Roelofs A. Ambipolar phosphorene field effect transistor. Acs Nano. 8: 11730-8. PMID 25329532 DOI: 10.1021/nn505868h  0.48
2014 Das S, Zhang W, Demarteau M, Hoffmann A, Dubey M, Roelofs A. Tunable transport gap in phosphorene. Nano Letters. 14: 5733-9. PMID 25111042 DOI: 10.1021/nl5025535  0.48
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/nn5017567  1
2014 Das S, Gulotty R, Sumant AV, Roelofs A. All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Letters. 14: 2861-6. PMID 24754722 DOI: 10.1021/nl5009037  0.48
2014 Das S, Prakash A, Salazar R, Appenzeller J. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. Acs Nano. 8: 1681-9. PMID 24392853 DOI: 10.1021/nn406603h  0.48
2013 Das S, Appenzeller J. Where does the current flow in two-dimensional layered systems? Nano Letters. 13: 3396-402. PMID 23802773 DOI: 10.1021/nl401831u  1
2013 Das S, Chen HY, Penumatcha AV, Appenzeller J. High performance multilayer MoS2 transistors with scandium contacts. Nano Letters. 13: 100-5. PMID 23240655 DOI: 10.1021/nl303583v  1
2011 Das S, Appenzeller J. FeTRAM. An organic ferroelectric material based novel random access memory cell. Nano Letters. 11: 4003-7. PMID 21859101 DOI: 10.1021/nl2023993  1
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