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Anupama Mallikarjunan, Ph.D. - Publications

Affiliations: 
2002 Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Faraz T, van Drunen M, Knoops HC, Mallikarjunan A, Buchanan I, Hausmann DM, Henri J, Kessels WM. Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies. Acs Applied Materials & Interfaces. PMID 28059494 DOI: 10.1021/acsami.6b12267  0.314
2012 Hsu IJ, Vrtis RN, Al-Rashid JE, Mallikarjunan A, Theodorou KE, Zielinski JM. Understanding the impact of porosity and pore structure in ultra low dielectric constant organosilicate glasses Materials Research Society Symposium Proceedings. 1428: 38-44. DOI: 10.1557/Opl.2012.1356  0.303
2012 Mallikarjunan A, Johnson AD, Matz L, Vrtis RN, Derecskei-Kovacs A, Jiang X, Xiao M. Silicon precursor development for advanced dielectric barriers for VLSI technology Microelectronic Engineering. 92: 83-85. DOI: 10.1016/j.mee.2011.04.014  0.31
2011 Mallikarjunan A, Matz LM, Johnson AD, Vrtis RN, Xiao M, Neill MO, Han B. Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors Materials Research Society Symposium Proceedings. 1287: 36-44. DOI: 10.1557/opl.2011.1432  0.366
2008 Belyansky M, Chace M, Gluschenkov O, Kempisty J, Klymko N, Madan A, Mallikarjunan A, Molis S, Ronsheim P, Wang Y, Yang D, Li Y. Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 517-521. DOI: 10.1116/1.2906259  0.326
2006 Jain P, Juneja JS, Mallikarjunan A, Rymaszewski EJ, Lu TM. Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress Applied Physics Letters. 88. DOI: 10.1063/1.2191832  0.648
2005 Belyansky M, Klymko N, Madan A, Mallikarjunan A, Li Y, Chakravarti A, Deshpande S, Domenicucci A, Bedell S, Adams E, Coffin J, Tai L, Sun SP, Widodo J, Lai CW. Stress generation in PECVD silicon nitride thin films for microelectronics applications Materials Research Society Symposium Proceedings. 875: 325-330.  0.303
2004 Jezewski C, Wiegand CJ, Ye D, Mallikarjunan A, Liu D, Jin C, Lanford WA, Wang GC, Senkevich JJ, Lu TM. Molecular Caulking: A pore sealing CVD polymer for ultralow k dielectrics Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1751195  0.652
2004 Senkevich JJ, Mallikarjunan A, Wiegand CJ, Lu TM, Bani-Salameh HN, Lichti RL. Correlation Between Bond Cleavage in Parylene N and the Degradation of Its Dielectric Properties Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1646834  0.631
2004 Mallikarjunan A, Murarka SP, Lu TM. Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep Journal of Applied Physics. 95: 1216-1221. DOI: 10.1063/1.1636256  0.438
2003 Mallikarjunan A, Wiegand C, Senkevich JJ, Yang GR, Williams E, Lu TM. Hindered copper ion penetration in parylene-N films Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1590091  0.664
2003 Karabacak T, Mallikarjunan A, Singh JP, Ye D, Wang GC, Lu TM. β-phase tungsten nanorod formation by oblique-angle sputter deposition Applied Physics Letters. 83: 3096-3098. DOI: 10.1063/1.1618944  0.554
2003 Mallikarjunan A, Juneja J, Yang G, Murarka SP, Lu TM. The effect of interfacial chemistry on metal ion penetration into polymeric films Materials Research Society Symposium - Proceedings. 734: 371-376.  0.498
2003 Roy ANU, Patel ZP, Mallikarjunan A, Bakhru H, Lu TM. Mechanical enhancement of nanoporous low-k films as interlaver dielectrics by ion implantation Materials Research Society Symposium - Proceedings. 734: 109-113.  0.329
2002 Mallikarjunan A, Juneja J, Yang G, Murarka SP, Lu T. The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films Mrs Proceedings. 734. DOI: 10.1557/Proc-734-B9.60  0.653
2002 Roy ANU, Patel ZP, Mallikarjunan A, Bakhru H, Lu T-. Mechanical Enhancement Of Nanoporous Low-K Films As Interlayer Dielectrics By Ion Implantation Mrs Proceedings. 734. DOI: 10.1557/Proc-734-B5.3  0.425
2002 Nandini A, Roy U, Mallikarjunan A, Kumar A, Fortin J, Shekhawat GS, Geer R, Dovidenko K, Lifshin E, Bakhru H, Lu TM. Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation Mrs Proceedings. 716: 349-354. DOI: 10.1557/Proc-716-B7.19  0.312
2002 Mallikarjunan A, Murarka SP, Lu TM. Mobile ion detection in organosiloxane polymer using triangular voltage sweep Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1507596  0.486
2002 Mallikarjunan A, Yang GR, Murarka SP, Lu TM. Plasma surface modification for ion penetration barrier in organosiloxane polymer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1884-1890. DOI: 10.1116/1.1508803  0.343
2001 Mallikarjunan A, Murarka SP, Lu TM. Metal drift behavior in low dielectric constant organosiloxane polymer Applied Physics Letters. 79: 1855-1857. DOI: 10.1063/1.1404408  0.395
2000 Mallikarjunan A, Murarka SP, Steinbruchel C, Kumar A, Bakhru H. Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors Journal of the Electrochemical Society. 147: 3502-3507. DOI: 10.1149/1.1393927  0.474
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