Nathan Newman - Publications

Affiliations: 
Engineering Science Arizona State University, Tempe, AZ, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Solid State Physics

54 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Antholine WE, Zhang S, Gonzales J, Newman N. Better Resolution of High-Spin Cobalt Hyperfine at Low Frequency: Co-Doped Ba(ZnTa)O₃ as a Model Complex. International Journal of Molecular Sciences. 19. PMID 30423944 DOI: 10.3390/ijms19113532  0.32
2015 Das B, Renaud A, Volosin AM, Yu L, Newman N, Seo DK. Nanoporous delafossite CuAlO2 from inorganic/polymer double gels: a desirable high-surface-area p-type transparent electrode material. Inorganic Chemistry. 54: 1100-8. PMID 25584858 DOI: 10.1021/ic5023906  0.72
2014 Vahidi M, Gifford JA, Zhang SK, Krishnamurthy S, Yu ZG, Yu L, Huang M, Youngbull C, Chen TY, Newman N. Fabrication of highly spin-polarized Co2FeAl 0.5Si0.5 thin-films Apl Materials. 2. DOI: 10.1063/1.4869798  0.72
2014 Carpenter RW, Xie H, Lehner S, Aoki T, Mardinly J, Vahidi M, Newman N, Ponce FA. High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM Microscopy and Microanalysis. 20: 70-71. DOI: 10.1017/S1431927614002074  0.72
2013 Vahidi M, Lehner SW, Buseck PR, Newman N. Growth of epitaxial pyrite (FeS2) thin films using sequential evaporation Acta Materialia. 61: 7392-7398. DOI: 10.1016/j.actamat.2013.08.045  0.72
2013 Peshek TJ, Zhang L, Singh RK, Tang Z, Vahidi M, To B, Coutts TJ, Gessert TA, Newman N, Van Schilfgaarde M. Criteria for improving the properties of ZnGeAs2 solar cells Progress in Photovoltaics: Research and Applications. 21: 906-917. DOI: 10.1002/pip.2177  0.72
2012 Liu L, Flores M, Newman N. Microwave loss in the high-performance dielectric Ba(Zn1/3Ta2/3)O3 at 4.2 K. Physical Review Letters. 109: 257601. PMID 23368499  0.56
2012 Liu LT, Kopas C, Singh RK, Hanley RM, Newman N. Growth and characterization of Ba(Cd 1/3Ta 2/3)O 3 thin films Thin Solid Films. 520: 6153-6157. DOI: 10.1016/j.tsf.2012.06.034  0.72
2012 Vahidi M, Tang ZZ, Tucker J, Peshek TJ, Zhang L, Kopas C, Singh RK, Van Schilfgaarde M, Newman N. Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth Journal of Crystal Growth. 338: 267-271. DOI: 10.1016/j.jcrysgro.2011.11.004  0.72
2010 Zhu Y, Pogrebnyakov AV, Wilke RH, Chen K, Xi XX, Redwing JM, Zhuang CG, Feng QR, Gan ZZ, Singh RK, Shen Y, Newman N, Rowell JM, Hunte F, Jaroszynski J, et al. Nanoscale disorder in pure and doped MgB2 thin films Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/9/095008  0.72
2010 Očko M, Žonja S, Nelson GL, Freericks JK, Yu L, Newman N. Low-temperature transport properties of TaxN thin films (0.72 ≤ x ≤ 0.83) Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/44/445405  0.72
2010 Bandyopadhyay S, Marzke RF, Singh RK, Newman N. Electrical conductivities and Li ion concentration-dependent diffusivities, in polyurethane polymers doped with lithium trifluoromethanesulfonimide (LiTFSI) or lithium perchlorate (LiClO4) Solid State Ionics. 181: 1727-1731. DOI: 10.1016/j.ssi.2010.09.057  0.72
2009 Ozbay A, Nowak ER, Yu ZG, Chu W, Shi Y, Krishnamurthy S, Tang Z, Newman N. Large magnetoresistance of thick polymer devices having La0.67 Sr0.33 MnO3 electrodes Applied Physics Letters. 95. DOI: 10.1063/1.3271772  0.72
2008 Shen Y, Gandikota R, Singh RK, Hunte FL, Jaroszynski J, Larbalestier DC, Rowell JM, Newman N. A novel technique for synthesizing MgB2 thin films with high upper critical fields Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/8/085009  0.72
2008 Singh RK, Shen Y, Gandikota R, Wright D, Carvalho C, Rowell JM, Newman N. Effect of Rb and Cs doping on superconducting properties of MgB2 thin films Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/2/025012  0.72
2008 Singh RK, Shen Y, Gandikota R, Rowell JM, Newman N. Effect of stoichiometry on oxygen incorporation in MgB2 thin films Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/01/015018  0.72
2007 Chamberlin RV, Newman N, Gandikota R, Singh RK, Moeckly BH. Saturation and intrinsic dynamics of fluxons in NbTi and MgB2 Applied Physics Letters. 90. DOI: 10.1063/1.2717111  0.72
2006 Yu L, Gandikota R, Singh RK, Gu L, Smith DJ, Meng X, Zeng X, Van Duzer T, Rowell JM, Newman N. Internally shunted Josephson junctions with barriers tuned near the metal-insulator transition for RSFQ logic applications Superconductor Science and Technology. 19: 719-731. DOI: 10.1088/0953-2048/19/8/006  0.72
2005 Cui XY, Medvedeva JE, Delley B, Freeman AJ, Newman N, Stampfl C. Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN. Physical Review Letters. 95: 256404. PMID 16384484 DOI: 10.1103/PhysRevLett.95.256404  0.72
2005 Braccini V, Gurevich A, Giencke JE, Jewell MC, Eom CB, Larbalestier DC, Pogrebnyakov A, Cui Y, Liu BT, Hu YF, Redwing JM, Li Q, Xi XX, Singh RK, Gandikota R, ... ... Newman N, et al. High-field superconductivity in alloyed MgB 2 thin films Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.012504  0.72
2005 Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q, Moeckly BH. Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films Applied Physics Letters. 87. DOI: 10.1063/1.2012524  0.72
2005 Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q. Effect of damage by 2 MeV He ions on the normal and superconducting properties of magnesium diboride Applied Physics Letters. 86. DOI: 10.1063/1.1845591  0.72
2002 Yu L, Stampfl C, Marshall D, Eshrich T, Narayanan V, Rowell JM, Newman N, Freeman AJ. Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride Physical Review B - Condensed Matter and Materials Physics. 65: 2451101-2451105.  0.72
2001 Kaul AB, Whiteley SR, Van Duzer T, Yu L, Newman N, Rowell JM. Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications Applied Physics Letters. 78: 99-101. DOI: 10.1063/1.1337630  0.72
1997 Newman N. Chapter 4 Thermochemistry of III-N Semiconductors Semiconductors and Semimetals. 50: 55-101. DOI: 10.1016/S0080-8784(08)63085-9  0.72
1997 Newman N. The energetics of the GaN MBE reaction: A case study of meta-stable growth Journal of Crystal Growth. 178: 102-112.  0.72
1996 Chan JS, Cheung NW, Schloss L, Jones E, Wong WS, Newman N, Liu X, Weber ER, Gassman A, Rubin MD. Thermal annealing characteristics of Si and Mg-implanted GaN thin films Applied Physics Letters. 68: 2702-2704. DOI: 10.1063/1.116314  0.72
1995 Fu TC, Newman N, Jones E, Chan JS, Liu X, Rubin MD, Cheung NW, Weber ER. The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy Journal of Electronic Materials. 24: 249-255. DOI: 10.1007/BF02659683  0.72
1994 Sheats JR, Newman N, Taber RC, Merchant P. Effects of processing on electrical properties of YBa2Cu307 films. II. In situ deposition processes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 388-392. DOI: 10.1116/1.579252  0.72
1994 Liang GC, Withers RS, Newman N, Cole BF. High-Temperature Superconductive Devices on Sapphire Ieee Transactions On Microwave Theory and Techniques. 42: 34-40. DOI: 10.1109/22.265525  0.6
1994 Wilson RG, Schwartz RN, Abernathy CR, Pearton SJ, Newman N, Rubin M, Fu T, Zavada JM. 1.54-μm photoluminescence from Er-implanted GaN and AlN Applied Physics Letters. 65: 992-994. DOI: 10.1063/1.112172  0.72
1994 Rubin M, Newman N, Chan JS, Fu TC, Ross JT. P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg Applied Physics Letters. 64: 64-66. DOI: 10.1063/1.110870  0.72
1992 Cole BF, Liang GC, Newman N, Char K, Zaharchuk G, Martens JS. Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications Applied Physics Letters. 61: 1727-1729. DOI: 10.1063/1.108411  0.72
1992 Miller D, Richards PL, Garrison SM, Newman N, Eom CB, Geballe TH, Etemad S, Inam A, Venkatesan T, Martens JS, Lee WY, Bourne LC. Submillimeter and microwave residual losses in epitaxial films of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O Journal of Superconductivity. 5: 379-388. DOI: 10.1007/BF00618138  0.72
1991 Nahum M, Sachtjen SA, Hu Q, Newman N, Richards PL, Cole BF. Fabrication And Measurement of High Tc Superconducting Microbolometers Ieee Transactions On Magnetics. 27: 3081-3084. DOI: 10.1109/20.133863  0.6
1991 Newman N, Cole BF, Garrison SM, Char K, Taber RC. Double gun off-axis sputtering of large area Yba2Cu3O7-δ superconducting films for microwave applications Ieee Transactions On Magnetics. 27: 1276-1279. DOI: 10.1109/20.133417  0.72
1991 Miller D, Richards PL, Etemad S, Inam A, Venkatesan T, Dutta B, Wu XD, Eom CB, Geballe TH, Newman N, Cole BF. Residual losses in epitaxial thin films of YBa2Cu 3O7 from microwave to submillimeter wave frequencies Applied Physics Letters. 59: 2326-2328. DOI: 10.1063/1.106058  0.72
1991 Garrison SM, Newman N, Cole BF, Char K, Barton RW. Observation of two in-plane epitaxial states in YBa2Cu 3O7-δ films on yttria-stabilized ZrO2 Applied Physics Letters. 58: 2168-2170. DOI: 10.1063/1.104995  0.72
1991 Fork DK, Ponce FA, Tramontana JC, Newman N, Phillips JM, Geballe TH. High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire Applied Physics Letters. 58: 2432-2434. DOI: 10.1063/1.104864  0.72
1990 Spicer WE, Liliental-Weber Z, Newman N, Weber ER, Spindt CJ. “Pinning” and Fermi level movement at GaAs surfaces and interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2084-2089. DOI: 10.1116/1.577007  0.68
1990 Newman N, Char K, Garrison SM, Barton RW, Taber RC, Eom CB, Geballe TH, Wilkens B. YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas Applied Physics Letters. 57: 520-522. DOI: 10.1063/1.104244  0.72
1990 Char K, Newman N, Garrison SM, Barton RW, Taber RC, Laderman SS, Jacowitz RD. Microwave surface resistance of epitaxial YBa2Cu 3O7 thin films on sapphire Applied Physics Letters. 57: 409-411. DOI: 10.1063/1.103651  0.72
1989 Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543  0.72
1989 Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968  0.72
1989 Spicer WE, Cao R, Miyano K, Kendelewicz T, Lindau I, Weber E, Liliental-Weber Z, Newman N. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation Applied Surface Science. 41: 1-16. DOI: 10.1016/0169-4332(89)90026-3  0.72
1988 Mccants CE, Kendelewicz T, Mahowald PH, Bertness KA, Williams MD, Newman N, Lindau I, Spicer WE. Chemical and electrical properties at the annealed Ti/GaAsf 110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1466-1472. DOI: 10.1116/1.575727  0.68
1988 Miret A, Newman N, Weber ER, Liliental-Weber Z, Washburn J, Spicer WE. Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study Journal of Applied Physics. 63: 2006-2010. DOI: 10.1063/1.341178  0.72
1988 Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351  0.72
1988 Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K, Lindau I, Liliental-Weber Z, Weber ER. The advanced unified defect model and its applications Applied Surface Science. 33: 1009-1029. DOI: 10.1016/0169-4332(88)90411-4  0.72
1987 Coulman D, Newman N, Reid GA, Liliental-Weber Z, Weber ER, Spicer WE. A chemical and structural investigation of schottky and ohmic au/gaas contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1521-1525. DOI: 10.1116/1.574595  0.68
1987 Eglash SJ, Newman N, Pan S, Mo D, Shenai K, Spicer WE, Ponce FA, Collins DM. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights Journal of Applied Physics. 61: 5159-5169. DOI: 10.1063/1.338290  0.72
1986 Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318  0.72
1985 Newman N, Chin KK, Petro WG, Kendelewicz T, Williams MD, McCants CE, Spicer WE. Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 996-1001. DOI: 10.1116/1.573374  0.72
1985 Newman N, Petro WG, Kendelewicz T, Pan SH, Eglash SJ, Spicer WE. Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films Journal of Applied Physics. 57: 1247-1251. DOI: 10.1063/1.334521  0.72
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