Year |
Citation |
Score |
2020 |
Sheil R, Perng YC, Mars J, Cho J, Dunn B, Toney MF, Chang JP. Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO Thin-Film Solid Electrolytes. Acs Applied Materials & Interfaces. PMID 33314924 DOI: 10.1021/acsami.0c11614 |
0.618 |
|
2020 |
Sang X, Xia Y, Sautet P, Chang JP. Atomic layer etching of metals with anisotropy, specificity, and selectivity Journal of Vacuum Science and Technology. 38: 43005. DOI: 10.1116/6.0000225 |
0.369 |
|
2020 |
Sang X, Chang JP. Patterning nickel for extreme ultraviolet lithography mask application. II. Hybrid reactive ion etch and atomic layer etch processing Journal of Vacuum Science and Technology. 38: 42604. DOI: 10.1116/6.0000191 |
0.344 |
|
2020 |
Sang X, Chen E, Chang JP. Patterning nickel for extreme ultraviolet lithography mask application I. Atomic layer etch processing Journal of Vacuum Science and Technology. 38: 42603. DOI: 10.1116/6.0000190 |
0.393 |
|
2020 |
Sheil R, Chang JP. Synthesis and integration of thin film solid state electrolytes for 3D Li-ion microbatteries Journal of Vacuum Science and Technology. 38: 32411. DOI: 10.1116/1.5142859 |
0.38 |
|
2020 |
Sang X, Chang JP. Physical and chemical effects in directional Atomic Layer Etching Journal of Physics D. 53: 183001. DOI: 10.1088/1361-6463/Ab6D94 |
0.337 |
|
2020 |
Acosta A, Fitzell K, Schneider JD, Dong C, Yao Z, Sheil R, Wang YE, Carman GP, Sun NX, Chang JP. Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films Journal of Applied Physics. 128: 13903. DOI: 10.1063/5.0011873 |
0.371 |
|
2020 |
Acosta A, Fitzell K, Schneider JD, Dong C, Yao Z, Wang YE, Carman GP, Sun NX, Chang JP. Enhancing the soft magnetic properties of FeGa with a non-magnetic underlayer for microwave applications Applied Physics Letters. 116: 222404. DOI: 10.1063/5.0007603 |
0.322 |
|
2020 |
Choi JH, Pham C, Dorman J, Kim T, Chang JP. Atomic layer deposition of YMnO3 thin films Journal of Magnetism and Magnetic Materials. 498: 166146. DOI: 10.1016/J.Jmmm.2019.166146 |
0.708 |
|
2019 |
Altieri ND, Chen JK, Chang JP. Controlling surface chemical states for selective patterning of CoFeB Journal of Vacuum Science and Technology. 37: 11303. DOI: 10.1116/1.5063662 |
0.388 |
|
2017 |
Pham CD, Chang J, Zurbuchen MA, Chang JP. Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical Enhanced Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 28925262 DOI: 10.1021/Acsami.7B08097 |
0.397 |
|
2017 |
Ishikawa K, Karahashi K, Ichiki T, Chang JP, George SM, Kessels WMM, Lee HJ, Tinck S, Um JH, Kinoshita K. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Japanese Journal of Applied Physics. 56: 6. DOI: 10.7567/Jjap.56.06Ha02 |
0.312 |
|
2017 |
Chen JK, Altieri ND, Kim T, Chen E, Lill T, Shen M, Chang JP. Directional etch of magnetic and noble metals. II. Organic chemical vapor etch Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4983830 |
0.363 |
|
2017 |
Chen JK, Altieri ND, Kim T, Lill T, Shen M, Chang JP. Directional etch of magnetic and noble metals. I. Role of surface oxidation states Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4983829 |
0.306 |
|
2017 |
Chen JK, Kim T, Altieri ND, Chen E, Chang JP. Ion beam assisted organic chemical vapor etch of magnetic thin films Journal of Vacuum Science and Technology. 35: 31304. DOI: 10.1116/1.4978553 |
0.311 |
|
2017 |
Li X, Fitzell K, Wu D, Karaba CT, Buditama A, Yu G, Wong KL, Altieri N, Grezes C, Kioussis N, Tolbert S, Zhang Z, Chang JP, Amiri PK, Wang KL. Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface Applied Physics Letters. 110: 52401. DOI: 10.1063/1.4975160 |
0.304 |
|
2016 |
Chen MC, Chang TH, Chang JP, Huang HD, Ho WC, Lin YS, Pan KL, Liu WH, Huang YK. Circulating miR-148b-3p and miR-409-3p as biomarkers for heart failure in patients with mitral regurgitation. International Journal of Cardiology. 222: 148-154. PMID 27505319 DOI: 10.1016/j.ijcard.2016.07.179 |
0.33 |
|
2016 |
Chen MC, Chang JP, Lin YS, Pan KL, Ho WC, Liu WH, Chang TH, Huang YK, Fang CY, Chen CJ. Deciphering the gene expression profile of peroxisome proliferator-activated receptor signaling pathway in the left atria of patients with mitral regurgitation. Journal of Translational Medicine. 14: 157. PMID 27250500 DOI: 10.1186/s12967-016-0871-3 |
0.333 |
|
2016 |
Chien D, Buditama AN, Schelhas LT, Kang HY, Robbennolt S, Chang JP, Tolbert SH. Tuning magnetoelectric coupling using porosity in multiferroic nanocomposites of ALD-grown Pb(Zr,Ti)O3 and templated mesoporous CoFe2O4 Applied Physics Letters. 109. DOI: 10.1063/1.4962536 |
0.333 |
|
2016 |
Chien D, Li X, Wong K, Zurbuchen MA, Robbennolt S, Yu G, Tolbert S, Kioussis N, Khalili Amiri P, Wang KL, Chang JP. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier Applied Physics Letters. 108. DOI: 10.1063/1.4943023 |
0.335 |
|
2016 |
Cho J, Kim T, Seegmiller T, Chang JP. Elucidating the Surface Reaction Mechanisms During Atomic Layer Deposition of LixAlySizO by in Situ Fourier Transform Infrared Spectroscopy Journal of Physical Chemistry C. 120: 11837-11846. DOI: 10.1021/Acs.Jpcc.5B09212 |
0.412 |
|
2015 |
Chang JP, Chen MC, Liu WH, Lin YS, Huang YK, Pan KL, Ho WC, Fang CY, Chen CJ, Chen HC. Mitochondrial apoptotic pathway activation in the atria of heart failure patients due to mitral and tricuspid regurgitation. Experimental and Molecular Pathology. 99: 65-73. PMID 26004742 DOI: 10.1016/j.yexmp.2015.05.007 |
0.336 |
|
2015 |
Chen HC, Chang JP, Chang TH, Lin YS, Huang YK, Pan KL, Fang CY, Chen CJ, Ho WC, Chen MC. Enhanced expression of ROCK in left atrial myocytes of mitral regurgitation: a potential mechanism of myolysis. Bmc Cardiovascular Disorders. 15: 33. PMID 25956928 DOI: 10.1186/s12872-015-0038-9 |
0.332 |
|
2015 |
Cho J, Kim T, Seegmiller T, Chang JP. Mechanistic study of atomic layer deposition of AlxSiyO thin film via in-situ FTIR spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4927318 |
0.382 |
|
2015 |
Marchack N, Kim T, Blom H, Chang JP. In-situ etch rate study of HfxLayOz in Cl2/BCl3 plasmas using the quartz crystal microbalance Journal of Vacuum Science and Technology. 33: 31305. DOI: 10.1116/1.4914132 |
0.783 |
|
2015 |
Kim T, Kim Y, Chen JKC, Chang JP. Viable chemical approach for patterning nanoscale magnetoresistive random access memory Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4904215 |
0.417 |
|
2015 |
Kim Y, Pham C, Chang JP. Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/6/063001 |
0.314 |
|
2015 |
Liang K, Buditama A, Chien D, Cui J, Cheung PL, Goljahi S, Tolbert SH, Chang JP, Lynch CS. The conductivity mechanism and an improved C-V model of ferroelectric PZT thin film Journal of Applied Physics. 117. DOI: 10.1063/1.4919431 |
0.351 |
|
2015 |
Pham CD, Chang J, Zurbuchen MA, Chang JP. Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition Chemistry of Materials. 27: 7282-7288. DOI: 10.1021/Acs.Chemmater.5B02162 |
0.42 |
|
2014 |
Kim T, Chen JK, Chang JP. Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements Journal of Vacuum Science and Technology. 32: 41305. DOI: 10.1116/1.4885061 |
0.341 |
|
2014 |
Perng YC, Cho J, Sun SY, Membreno D, Cirigliano N, Dunn B, Chang JP. Synthesis of ion conducting LixAlySizO thin films by atomic layer deposition Journal of Materials Chemistry A. 2: 9566-9573. DOI: 10.1039/C3Ta14928E |
0.665 |
|
2014 |
Perng YC, Kim T, Chang JP. Effect of residual H2O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH3 Applied Surface Science. 314: 1047-1052. DOI: 10.1016/J.Apsusc.2014.06.041 |
0.645 |
|
2013 |
Janković V, Yang YM, You J, Dou L, Liu Y, Cheung P, Chang JP, Yang Y. Active layer-incorporated, spectrally tuned Au/SiO2 core/shell nanorod-based light trapping for organic photovoltaics. Acs Nano. 7: 3815-22. PMID 23627699 DOI: 10.1021/Nn400246Q |
0.628 |
|
2013 |
Chen HC, Chen YL, Guo BF, Tsai TH, Chang JP, Pan KL, Lin YS, Chen MC. Thrombocytopenia, dual antiplatelet therapy, and heparin bridging strategy increase pocket hematoma complications in patients undergoing cardiac rhythm device implantation. The Canadian Journal of Cardiology. 29: 1110-7. PMID 23474139 DOI: 10.1016/j.cjca.2012.12.014 |
0.352 |
|
2013 |
Hsu CC, Marchack N, Martin RM, Pham C, Hoang J, Chang JP. Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. the effect of oxygen addition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4810908 |
0.789 |
|
2013 |
Choi JH, Zhang F, Perng YC, Chang JP. Tailoring the composition of lead zirconate titanate by atomic layer deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4775789 |
0.663 |
|
2012 |
Zhang LQ, Liu XH, Perng YC, Cho J, Chang JP, Mao SX, Ye ZZ, Huang JY. Direct observation of Sn crystal growth during the lithiation and delithiation processes of SnO(2) nanowires. Micron (Oxford, England : 1993). 43: 1127-33. PMID 22770619 DOI: 10.1016/J.Micron.2012.01.016 |
0.621 |
|
2012 |
Marchack N, Chang JP. Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers. Annual Review of Chemical and Biomolecular Engineering. 3: 235-62. PMID 22691090 DOI: 10.1146/Annurev-Chembioeng-062011-080958 |
0.745 |
|
2012 |
Yeh M, Lin L, Li Y, Chang J, Chen P, Lee C, Ho K. Composite Films Based on Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonate) Conducting Polymer and TiC Nanoparticles as the Counter Electrodes for Flexible Dye-Sensitized Solar Cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Ne01 |
0.347 |
|
2012 |
Dorman JA, Choi JH, Kuzmanich G, Bargar JR, Chang JP. Optimizing the crystal environment through extended x-ray absorption fine structure to increase the luminescent lifetimes of Er 3 doped Y 2O 3 nanoparticles Journal of Applied Physics. 111. DOI: 10.1063/1.3702789 |
0.673 |
|
2012 |
Zhou H, Dorman JA, Perng YC, Chang JP, Liu J. Temperature-dependent electron transport in highly ordered Co/Al 2O 3 core-shell nanocrystal memory synthesized with di-block co-polymers Journal of Applied Physics. 111. DOI: 10.1063/1.3698322 |
0.746 |
|
2012 |
Dorman JA, Choi JH, Kuzmanich G, Chang JP. High-quality white light using core-shell RE 3+:LaPO 4 (RE = Eu, Tb, Dy, Ce) phosphors Journal of Physical Chemistry C. 116: 12854-12860. DOI: 10.1021/Jp300858Z |
0.649 |
|
2012 |
Dorman JA, Choi JH, Kuzmanich G, Chang JP. Elucidating the effects of a rare-earth oxide shell on the luminescence dynamics of Er 3+:Y 2O 3 nanoparticles Journal of Physical Chemistry C. 116: 10333-10340. DOI: 10.1021/Jp300126R |
0.691 |
|
2011 |
Jankovic V, Chang JP. HfO 2 and ZrO 2-based microchemical ion sensitive field effect transistor (ISFET) sensors: Simulation experiment Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3623421 |
0.65 |
|
2011 |
Marchack N, Chang JP. Perspectives in nanoscale plasma etching: What are the ultimate limits? Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/17/174011 |
0.756 |
|
2011 |
Zhang F, Perng YC, Choi JH, Wu T, Chung TK, Carman GP, Locke C, Thomas S, Saddow SE, Chang JP. Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3596574 |
0.65 |
|
2011 |
Zhou H, Dorman JA, Perng YC, Gachot S, Zheng JG, Chang JP, Liu J. Memory characteristics of ordered Co/ Al2 O3 core-shell nanocrystal arrays assembled by diblock copolymer process Applied Physics Letters. 98. DOI: 10.1063/1.3589993 |
0.747 |
|
2011 |
Choi JH, Mao Y, Chang JP. Development of hafnium based high-k materials - A review Materials Science and Engineering R: Reports. 72: 97-136. DOI: 10.1016/J.Mser.2010.12.001 |
0.359 |
|
2010 |
Zhou H, Dorman JA, Perng Y, Gachot S, Huang J, Mao Y, Chang J, Liu J. Co/HfO2 core shell nanocrystal memory Mrs Proceedings. 1250. DOI: 10.1557/Proc-1250-G01-09 |
0.731 |
|
2010 |
Dorman JA, Mao Y, Bargar JR, Chang JP. In situ X-ray diffraction and absorption studies of the growth and phase transformation of yttrium hydroxide nanotubes to their oxide counterparts Journal of Physical Chemistry C. 114: 17422-17427. DOI: 10.1021/Jp105389A |
0.684 |
|
2010 |
Sawkar-Mathur M, Marchiori C, Fompeyrine J, Toney MF, Bargar J, Chang JP. Structural properties of epitaxial SrHfO3 thin films on Si (001) Thin Solid Films. 518: S118-S122. DOI: 10.1016/J.Tsf.2009.10.068 |
0.422 |
|
2009 |
Martin RM, Chang JP. Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 224-229. DOI: 10.1116/1.3065705 |
0.391 |
|
2009 |
Martin RM, Blom H, Chang JP. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms Journal of Vacuum Science and Technology. 27: 217-223. DOI: 10.1116/1.3065695 |
0.399 |
|
2009 |
Martin RM, Chang JP. Plasma etching of Hf-based high- k thin films. Part I. Effect of complex ions and radicals on the surface reactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 209-216. DOI: 10.1116/1.3065679 |
0.376 |
|
2009 |
Mao Y, Guo X, Tran T, Wang KL, Shih CK, Chang JP. Luminescent properties of ensemble and individual erbium-doped yttrium oxide nanotubes Journal of Applied Physics. 105: 94329. DOI: 10.1063/1.3117520 |
0.311 |
|
2009 |
Mao Y, Guo X, Huang JY, Wang KL, Chang JP. Luminescent Nanocrystals with A2B2O7 Composition Synthesized by a Kinetically Modified Molten Salt Method Journal of Physical Chemistry C. 113: 1204-1208. DOI: 10.1021/Jp807111H |
0.314 |
|
2008 |
Liu J, Mao Y, Lan E, Banatao DR, Forse GJ, Lu J, Blom HO, Yeates TO, Dunn B, Chang JP. Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition. Journal of the American Chemical Society. 130: 16908-13. PMID 19053479 DOI: 10.1021/Ja803186E |
0.348 |
|
2008 |
Hsu CC, Hoang J, Le V, Chang JP. Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1919-1925. DOI: 10.1116/1.2998759 |
0.579 |
|
2008 |
Hoang J, Hsu CC, Chang JP. Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1911-1918. DOI: 10.1116/1.2998756 |
0.557 |
|
2008 |
Liu J, Martin RM, Chang JP. Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1251-1257. DOI: 10.1116/1.2966430 |
0.476 |
|
2008 |
Sawkar-Mathur M, Perng YC, Lu J, Blom HO, Bargar J, Chang JP. The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge Applied Physics Letters. 93. DOI: 10.1063/1.3040311 |
0.65 |
|
2008 |
Sawkar-Mathur M, Chang JP. Material and electrical properties of Hfx Ruy and Hfx Ruy Nz metals as gate electrodes for p -metal oxide semiconductor field effect transistor devices Journal of Applied Physics. 104. DOI: 10.1063/1.2996111 |
0.349 |
|
2008 |
Mao Y, Bargar J, Toney M, Chang JP. Correlation between luminescent properties and local coordination environment for erbium dopant in yttrium oxide nanotubes Journal of Applied Physics. 103: 094316. DOI: 10.1063/1.2912486 |
0.335 |
|
2008 |
Mao Y, Huang JY, Ostroumov R, Wang KL, Chang JP. Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanotubes Journal of Physical Chemistry C. 112: 2278-2285. DOI: 10.1021/Jp0773738 |
0.313 |
|
2008 |
Hoang J, Chang JP. Effect of Yb 3+ Co-doping on the luminescent properties of Er 3+ :Y 2O 3Thin films Aiche Annual Meeting, Conference Proceedings. |
0.57 |
|
2008 |
Hoang J, Chang JP. Simulation of profile evolution in shallow trench formation by plasma etching Aiche Annual Meeting, Conference Proceedings. |
0.508 |
|
2007 |
Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94. PMID 17604405 DOI: 10.1021/Nl071046U |
0.573 |
|
2007 |
Cruz D, Chang JP, Fico M, Guymon AJ, Austin DE, Blain MG. Design, microfabrication, and analysis of micrometer-sized cylindrical ion trap arrays. The Review of Scientific Instruments. 78: 015107. PMID 17503946 DOI: 10.1063/1.2403840 |
0.636 |
|
2007 |
Tanner CM, Toney MF, Lu J, Blom HO, Sawkar-Mathur M, Tafesse MA, Chang JP. Engineering epitaxial γ -Al2 O3 gate dielectric films on 4H-SiC Journal of Applied Physics. 102. DOI: 10.1063/1.2812609 |
0.6 |
|
2007 |
Tanner CM, Perng YC, Frewin C, Saddow SE, Chang JP. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2805742 |
0.743 |
|
2007 |
Hoang J, Van TT, Sawkar-Mathur M, Hoex B, Van De Sanden MCM, Kessels WMM, Ostroumov R, Wang KL, Bargar JR, Chang JP. Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2748629 |
0.771 |
|
2007 |
Tanner CM, Sawkar-Mathur M, Lu J, Blom HO, Toney MF, Chang JP. Structural properties of epitaxial γ- Al2O3 (111) thin films on 4H-SiC (0001) Applied Physics Letters. 90. DOI: 10.1063/1.2435978 |
0.621 |
|
2007 |
Tanner CM, Choi J, Chang JP. Electronic structure and band alignment at the Hf O2 4H-SiC interface Journal of Applied Physics. 101. DOI: 10.1063/1.2432402 |
0.618 |
|
2006 |
Tanner CM, Lu J, Blom HO, Chang JP. Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001) Materials Science Forum. 1075-1078. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1075 |
0.623 |
|
2006 |
Tanner CM, Choi J, Chang JP. Experimental and first-principles studies of the band alignment at the HfO2/4H-SiC (0001) interface Materials Science Forum. 527: 1071-1074. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1071 |
0.617 |
|
2006 |
Tanner CM, Lu J, Blom H, Chang JP. Growth of Epitaxial γ-Al2O3 Dielectrics on 4H-SiC Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B10-06 |
0.606 |
|
2006 |
Johnson-Steigelman HT, Brinck AV, Chang JP, Lyman PF. Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1218-1222. DOI: 10.1116/1.2180274 |
0.443 |
|
2006 |
Van TT, Hoang J, Ostroumov R, Wang KL, Bargar JR, Lu J, Blom HO, Chang JP. Nanostructure and temperature-dependent photoluminescence of Er-doped Y 2O 3 thin films for micro-optoelectronic integrated circuits Journal of Applied Physics. 100. DOI: 10.1063/1.2349477 |
0.774 |
|
2006 |
Van TT, Bargar JR, Chang JP. Er coordination in y 2O 3 thin films studied by extended x-ray absorption fine structure Journal of Applied Physics. 100. DOI: 10.1063/1.2214299 |
0.691 |
|
2006 |
Choi J, Puthenkovilakam R, Chang JP. Effect of nitrogen on the electronic properties of hafnium oxynitrides Journal of Applied Physics. 99. DOI: 10.1063/1.2177385 |
0.775 |
|
2005 |
Lao SX, Martin RM, Chang JP. Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films Journal of Vacuum Science and Technology. 23: 488-496. DOI: 10.1116/1.1894666 |
0.431 |
|
2005 |
Choi J, Chang JP. Photoconductivity of AlN films on SiC Journal of Applied Physics. 98. DOI: 10.1063/1.2126787 |
0.346 |
|
2005 |
Van TT, Chang JP. Controlled erbium incorporation and photoluminescence of Er-doped Y 2O 3 Applied Physics Letters. 87. DOI: 10.1063/1.1984082 |
0.715 |
|
2005 |
Puthenkovilakam R, Sawkar M, Chang JP. Electrical characteristics of postdeposition annealed Hf O2 on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1927273 |
0.809 |
|
2005 |
Choi J, Puthenkovilakam R, Chang JP. Band structure and alignment of the AlNSiC heterostructure Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923187 |
0.776 |
|
2005 |
Cruz D, Chang JP, Blain MG. Field emission characteristics of a tungsten microelectromechanical system device Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875756 |
0.631 |
|
2005 |
Puthenkovilakam R, Lin YS, Choi J, Lu J, Blom HO, Pianetta P, Devine D, Sendler M, Chang JP. Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon Journal of Applied Physics. 97. DOI: 10.1063/1.1831543 |
0.811 |
|
2005 |
Van TT, Chang JP. Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals Surface Science. 596: 1-11. DOI: 10.1016/J.Susc.2005.08.019 |
0.715 |
|
2005 |
Van TT, Chang JP. Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides Applied Surface Science. 246: 250-261. DOI: 10.1016/J.Apsusc.2004.11.025 |
0.676 |
|
2005 |
Choi J, Tanner C, Chang JP. First-principles studies of the electronic properties of Hfo2 on Sic Aiche Annual Meeting, Conference Proceedings. 10537. |
0.301 |
|
2005 |
Tanner CM, Choi J, Chang JP. Material and electrical properties of ultrathin HfO 2 films on 4H-SiC (0001) Ecs Transactions. 1: 149-151. |
0.513 |
|
2004 |
Sha L, Chang JP. Plasma etching of high dielectric constant materials on silicon in halogen chemistries Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 88-95. DOI: 10.1116/1.1627771 |
0.611 |
|
2004 |
Ni D, Lou Y, Christofides PD, Sha L, Lao S, Chang JP. Real-time carbon content control for PECVD ZrO/sub 2/ thin-film growth Ieee Transactions On Semiconductor Manufacturing. 17: 221-230. DOI: 10.1109/Tsm.2004.826939 |
0.584 |
|
2004 |
Puthenkovilakam R, Carter EA, Chang JP. First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.155329 |
0.793 |
|
2004 |
Moravej M, Yang X, Nowling GR, Chang JP, Hicks RF, Babayan SE. Physics of high-pressure helium and argon radio-frequency plasmas Journal of Applied Physics. 96: 7011-7017. DOI: 10.1063/1.1815047 |
0.319 |
|
2004 |
Puthenkovilakam R, Chang JP. An accurate determination of barrier heights at the HfO 2/Si interfaces Journal of Applied Physics. 96: 2701-2707. DOI: 10.1063/1.1778213 |
0.79 |
|
2004 |
Puthenkovilakam R, Chang JP. Valence band structure and band alignment at the ZrO 2/Si interface Applied Physics Letters. 84: 1353-1355. DOI: 10.1063/1.1650547 |
0.781 |
|
2004 |
Huang TJ, Tseng HR, Sha L, Lu W, Brough B, Flood AH, Yu BD, Celestre PC, Chang JP, Stoddart JF, Ho CM. Mechanical shuttling of linear motor-molecules in condensed phases on solid substrates Nano Letters. 4: 2065-2071. DOI: 10.1021/Nl035099X |
0.561 |
|
2004 |
Ni D, Lou Y, Christofides PD, Lao S, Chang JP. Real-Time Feedback Control of Carbon Content of Zirconium Dioxide Thin Films Using Optical Emission Spectroscopy Ifac Proceedings Volumes. 37: 553-558. DOI: 10.1016/S1474-6670(17)38790-6 |
0.308 |
|
2003 |
Sha L, Puthenkovilakam R, Lin Y, Chang JP. Ion-enhanced chemical etching of HfO2 for integration in metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 21: 2420-2427. DOI: 10.1116/1.1627333 |
0.791 |
|
2003 |
Sha L, Chang JP. Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 1915-1922. DOI: 10.1116/1.1615975 |
0.53 |
|
2003 |
Chang JP, Coburn JW. Plasma-Surface interactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21. DOI: 10.1116/1.1600452 |
0.326 |
|
2003 |
Cho B, Lao SX, Chang JP. Origin and effect of impurity incorporation in plasma-enhanced ZrO2 deposition Journal of Applied Physics. 93: 9345-9351. DOI: 10.1063/1.1572193 |
0.4 |
|
2003 |
Lin YS, Puthenkovilakam R, Chang JP, Bouldin C, Levin I, Nguyen NV, Ehrstein J, Sun Y, Pianetta P, Conard T, Vandervorst W, Ventura V, Selbrede S. Interfacial properties of ZrO2 on silicon Journal of Applied Physics. 93: 5945-5952. DOI: 10.1063/1.1563844 |
0.814 |
|
2003 |
Cho B, Chang JP, Min J, Moon SH, Kim YW, Levin I. Material characteristics of electrically tunable zirconium oxide thin films Journal of Applied Physics. 93: 745-749. DOI: 10.1063/1.1525044 |
0.455 |
|
2003 |
Puthenkovilakam R, Chang JP. Tailoring high-K/silicon interface for nanoelectronics applications Proceedings - Electrochemical Society. 22: 3-8. |
0.801 |
|
2002 |
Chang JP. Tailoring the Material and Electronic Properties of Ultra-Thin ZrO2 Films for Microelectronics Application Journal of the Chinese Institute of Chemical Engineers. 33: 95-102. DOI: 10.6967/Jcice.200201.0095 |
0.46 |
|
2002 |
Sha L, Cho BO, Chang JP. Ion-enhanced chemical etching of ZrO2 in a chlorine discharge Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1525-1531. DOI: 10.1116/1.1491267 |
0.575 |
|
2002 |
Cho BO, Wang J, Chang JP. Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO 2 deposition Journal of Applied Physics. 92: 4238-4244. DOI: 10.1063/1.1506421 |
0.395 |
|
2002 |
Lin YS, Puthenkovilakam R, Chang JP. Dielectric property and thermal stability of HfO2 on silicon Applied Physics Letters. 81: 2041-2043. DOI: 10.1063/1.1506207 |
0.803 |
|
2002 |
Cho BO, Wang J, Sha L, Chang JP. Tuning the electrical properties of zirconium oxide thin films Applied Physics Letters. 80: 1052-1054. DOI: 10.1063/1.1448667 |
0.655 |
|
2002 |
Chu K, Chang JP, Steigerwald ML, Fleming RM, Opila RL, Lang DV, Van Dover RB, Jones CDW. Material and electrical characterization of carbon-doped Ta 2O 5 films for embedded dynamic random access memory applications Journal of Applied Physics. 91: 308-316. DOI: 10.1063/1.1418420 |
0.395 |
|
2002 |
Chang JP. Tailoring the material and electronic properties of ultra-thin ZrO2 films for microelectronics application Journal of the Chinese Institute of Chemical Engineers. 33: 95-102. |
0.352 |
|
2001 |
Chu K, Cho B, Chang JP, Steigerwald ML, Fleming RM, Opila RL, Lang DV, Dover RBV, Jones CDW. Material and Electrical Characterization of Carbon-Doped Ta 2 O 5 Films for Embedded DRAM Applications Mrs Proceedings. 672. DOI: 10.1557/Proc-671-O8.39 |
0.395 |
|
2001 |
Chang JP, Lin YS. Ultra-thin zirconium oxide films deposited by rapid thermal chemical vapor deposition (RT-CVD) as alternative gate dielectric Materials Research Society Symposium - Proceedings. 670. DOI: 10.1557/Proc-670-K1.4 |
0.461 |
|
2001 |
Chang JP, Lin Y, Berger S, Kepten A, Bloom R, Levy S. Ultrathin zirconium oxide films as alternative gate dielectrics Journal of Vacuum Science & Technology B. 19: 2137-2143. DOI: 10.1116/1.1415513 |
0.465 |
|
2001 |
Cho BO, Lao S, Sha L, Chang JP. Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2751-2761. DOI: 10.1116/1.1403717 |
0.631 |
|
2001 |
Chang JP, Sawin HH. Notch formation by stress enhanced spontaneous etching of polysilicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1870-1873. DOI: 10.1116/1.1401752 |
0.597 |
|
2001 |
Chang JP, Lin YS, Chu K. Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1782-1787. DOI: 10.1116/1.1396639 |
0.38 |
|
2001 |
Chang JP, Sawin HH. Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1319-1327. DOI: 10.1116/1.1387452 |
0.63 |
|
2001 |
Chang JP, Lin YS. Thermal stability of stacked high-k dielectrics on silicon Applied Physics Letters. 79: 3824-3826. DOI: 10.1063/1.1419030 |
0.423 |
|
2001 |
Chang JP, Lin YS. Dielectric property and conduction mechanism of ultrathin zirconium oxide films Applied Physics Letters. 79: 3666-3668. DOI: 10.1063/1.1418265 |
0.438 |
|
2001 |
Chang JP, Lin YS. Highly conformal ZrO2 deposition for dynamic random access memory application Journal of Applied Physics. 90: 2964-2969. DOI: 10.1063/1.1389756 |
0.422 |
|
2000 |
Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J, Silverman PJ, Weir B, Lu HC, Gustafsson T, Garfunkel E. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics. 87: 4449-4455. DOI: 10.1063/1.373090 |
0.427 |
|
2000 |
Queeney KT, Weldon MK, Chang JP, Chabal YJ, Gurevich AB, Sapjeta J, Opila RL. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon Journal of Applied Physics. 87: 1322-1330. DOI: 10.1063/1.372017 |
0.416 |
|
1999 |
Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Oxygen diffusioin in tantalum oxide metal-oxide-metal capacitor structures Materials Research Society Symposium - Proceedings. 574: 329-334. DOI: 10.1557/Proc-574-329 |
0.336 |
|
1999 |
Sapjeta J, Green ML, Chang JP, Silverman PJ. Relationship between interfacial roughness and dielectric reliability for silicon oxynitride gate dielectrics processed with nitric oxide Materials Research Society Symposium - Proceedings. 567: 289-294. DOI: 10.1557/Proc-567-289 |
0.433 |
|
1999 |
Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS. Chemical and thermal stability of fluorinated amorphous carbon films for interlayer dielectric applications Materials Research Society Symposium - Proceedings. 565: 117-122. DOI: 10.1557/Proc-565-117 |
0.308 |
|
1999 |
Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS. Integration of fluorinated amorphous carbon as low-dielectric constant Insulator: Effects of heating and deposition of tantalum nitride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2969-2974. DOI: 10.1116/1.581968 |
0.319 |
|
1999 |
Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures Applied Physics Letters. 74: 3705-3707. DOI: 10.1063/1.123227 |
0.319 |
|
1999 |
Lu HC, Yasuda N, Garfunkel E, Gustafsson T, Chang JP, Opila RL, Alers G. Structural properties of thin films of high dielectric constant materials on silicon Microelectronic Engineering. 48: 287-290. DOI: 10.1016/S0167-9317(99)00390-1 |
0.441 |
|
1998 |
Chang JP, Mahorowala AP, Sawin HH. Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 217-224. DOI: 10.1116/1.580974 |
0.619 |
|
1997 |
Chang JP, Zhang Z, Xu H, Sawin HH, Butterbaugh JW. Transition metal cleaning using thermal beams Journal of Vacuum Science and Technology. 15: 2959-2967. DOI: 10.1116/1.580891 |
0.601 |
|
1997 |
Chang JP, Sawin HH. Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2, and Cl+ beam scattering Journal of Vacuum Science and Technology. 15: 610-615. DOI: 10.1116/1.580692 |
0.613 |
|
1997 |
Chang JP, Arnold JC, Zau GCH, Shin H, Sawin HH. Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine Journal of Vacuum Science and Technology. 15: 1853-1863. DOI: 10.1116/1.580652 |
0.619 |
|
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