Bruce E. Gnade - Publications

Affiliations: 
Materials Science and Engineering University of Texas at Dallas, Richardson, TX, United States 
Area:
Materials Science Engineering, Nanotechnology

224 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Young CA, Hammack A, Lee HJ, Jia H, Yu T, Marquez MD, Jamison AC, Gnade BE, Lee TR. Poly(1,4-phenylene vinylene) Derivatives with Ether Substituents to Improve Polymer Solubility for Use in Organic Light-Emitting Diode Devices. Acs Omega. 4: 22332-22344. PMID 31909316 DOI: 10.1021/acsomega.9b02396  0.48
2017 Zhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, Kim MJ, Gnade BE. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si Journal of Alloys and Compounds. 699: 1134-1139. DOI: 10.1016/J.Jallcom.2016.12.229  0.56
2016 Charkhkar H, Arreaga-Salas DE, Tran T, Hammack A, Voit WE, Pancrazio JJ, Gnade BE. Novel disposable microelectrode array for cultured neuronal network recording exhibiting equivalent performance to commercially available arrays Sensors and Actuators, B: Chemical. 226: 232-238. DOI: 10.1016/J.Snb.2015.11.094  0.64
2016 Smith L, Murphy JW, Kim J, Rozhdestvenskyy S, Mejia I, Park H, Allee DR, Quevedo-Lopez M, Gnade B. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 838: 117-123. DOI: 10.1016/J.Nima.2016.09.026  0.64
2016 Wondmagegn W, Mejia I, Salas-Villasenor A, Stiegler HJ, Quevedo-Lopez MA, Pieper RJ, Gnade BE. CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications Microelectronic Engineering. 157: 64-70. DOI: 10.1016/J.Mee.2016.02.042  0.64
2015 Reuss RH, Raupp GB, Gnade BE. Special issue on advanced flexible electronics for sensing applications [Scanning the Issue] Proceedings of the Ieee. 103: 491-496. DOI: 10.1109/JPROC.2015.2414486  0.64
2015 Huang P, Du J, Gunathilake SS, Rainbolt EA, Murphy JW, Black KT, Barrera D, Hsu JWP, Gnade BE, Stefan MC, Biewer MC. Benzodifuran and benzodithiophene donor-acceptor polymers for bulk heterojunction solar cells Journal of Materials Chemistry A. 3: 6980-6989. DOI: 10.1039/C5Ta00936G  0.64
2015 Fuentes-Fernandez EMA, Gnade BE, Quevedo-Lopez MA, Shah P, Alshareef HN. The effect of poling conditions on the performance of piezoelectric energy harvesters fabricated by wet chemistry Journal of Materials Chemistry A. 3: 9837-9842. DOI: 10.1039/C5Ta00447K  0.64
2015 Wang Q, Ma D, Ding J, Wang L, Qiao Q, Jia H, Gnade BE, Hoshikawa-Halbert J. An efficient dual-emissive-layer white organic light emitting-diode: Insight into device working mechanism and origin of color-shift Organic Electronics: Physics, Materials, Applications. 19: 157-162. DOI: 10.1016/J.Orgel.2015.01.027  0.64
2015 Xiong K, Longo RC, Wang W, Gupta RP, Gnade BE, Cho K. Enhancement of the thermoelectric efficiency of PbTe by selective site doping: Effect of group VA impurities Computational Materials Science. 97: 159-164. DOI: 10.1016/J.Commatsci.2014.10.027  0.64
2015 Wang Q, Oswald IWH, Yang X, Zhou G, Jia H, Qiao Q, Hoshikawa-Halbert J, Gnade BE. Managing Charge and Exciton Transporting Behavior in White Organic Light-Emitting Devices for High Power Efficiency and Superior Color Stability Advanced Electronic Materials. 1. DOI: 10.1002/Aelm.201400040  0.64
2014 Wang Q, Oswald IW, Yang X, Zhou G, Jia H, Qiao Q, Chen Y, Hoshikawa-Halbert J, Gnade BE. A non-doped phosphorescent organic light-emitting device with above 31% external quantum efficiency. Advanced Materials (Deerfield Beach, Fla.). 26: 8107-13. PMID 25219957 DOI: 10.1002/Adma.201402947  0.64
2014 McDougald RN, Chilukuri B, Jia H, Perez MR, Rabaâ H, Wang X, Nesterov VN, Cundari TR, Gnade BE, Omary MA. Molecular and electronic structure of cyclic trinuclear gold(I) carbeniate complexes: insights for structure/luminescence/conductivity relationships. Inorganic Chemistry. 53: 7485-99. PMID 24961904 DOI: 10.1021/Ic500808Q  0.64
2014 Mao D, Mejia I, Salas-Villasenor AL, Stiegler HJ, Gnade BE, Quevedo-Lopez MA. Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory Ieee Transactions On Electron Devices. 61: 3442-3447. DOI: 10.1109/Ted.2014.2347053  0.64
2014 Murphy JW, Smith L, Calkins J, Kunnen GR, Mejia I, Cantley KD, Chapman RA, Sastré-Hernández J, Mendoza-Pérez R, Contreras-Puente G, Allee DR, Quevedo-Lopez M, Gnade B. Thin film cadmium telluride charged particle sensors for large area neutron detectors Applied Physics Letters. 105. DOI: 10.1063/1.4895925  0.64
2014 Wang Q, Ma D, Leo K, Ding J, Wang L, Qiao Q, Jia H, Gnade BE. Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability Applied Physics Letters. 104. DOI: 10.1063/1.4876215  0.64
2014 Magurudeniya HD, Kularatne RS, Rainbolt EA, Bhatt MP, Murphy JW, Sheina EE, Gnade BE, Biewer MC, Stefan MC. Benzodithiophene homopolymers synthesized by Grignard metathesis (GRIM) and Stille coupling polymerizations Journal of Materials Chemistry A. 2: 8773-8781. DOI: 10.1039/C4Ta01739K  0.64
2014 Ferrá-González SR, Berman-Mendoza D, García-Gutiérrez R, Castillo SJ, Ramírez-Bon R, Gnade BE, Quevedo-López MA. Optical and structural properties of CdS thin films grown by chemical bath deposition doped with Ag by ion exchange Optik. 125: 1533-1536. DOI: 10.1016/J.Ijleo.2013.08.035  0.64
2014 Lee S, Iyore OD, Park S, Lee YG, Jandhyala S, Kang CG, Mordi G, Kim Y, Quevedo-Lopez M, Gnade BE, Wallace RM, Lee BH, Kim J. Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate Carbon. 68: 791-797. DOI: 10.1016/J.Carbon.2013.11.071  0.64
2014 Fuentes-Fernandez EMA, Salomon-Preciado AM, Gnade BE, Quevedo-Lopez MA, Shah P, Alshareef HN. Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer Journal of Electronic Materials. 43: 3898-3904. DOI: 10.1007/S11664-014-3308-X  0.64
2014 Wang Q, Oswald IWH, Perez MR, Jia H, Shahub AA, Qiao Q, Gnade BE, Omary MA. Doping-free organic light-emitting diodes with very high power efficiency, simple device structure, and superior spectral performance Advanced Functional Materials. 24: 4746-4752. DOI: 10.1002/Adfm.201400597  0.64
2013 Noriega JR, Quevedo M, Gnade B, Vasselli J. Note: ion source design for ion trap systems. The Review of Scientific Instruments. 84: 066110. PMID 23822397 DOI: 10.1063/1.4812337  0.48
2013 Noriega JR, Iyore OD, Budime C, Gnade B, Vasselli J. Characterization system for research on energy storage capacitors. The Review of Scientific Instruments. 84: 055109. PMID 23742591 DOI: 10.1063/1.4804165  0.64
2013 Gutierrez-Heredia G, Mejia I, Hernandez-Como N, Rivas-Aguilar ME, Martinez-Landeros VH, Aguirre-Tostado FS, Gnade BE, Quevedo M. Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications Materials Research Society Symposium Proceedings. 1494: 299-303. DOI: 10.1557/Opl.2013.102  0.64
2013 Mejia I, Salas-Villasenor AL, Murphy JW, Kunnen GR, Cantley KD, Allee DR, Gnade BE, Quevedo-Lopez MA. High-performance logic circuits using solution-based, low-temperature semiconductors for flexible electronics Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015996  0.64
2013 Murphy JW, Eddy A, Kunnen GR, Mejia I, Cantley KD, Allee DR, Quevedo-Lopez MA, Gnade BE. Sol gel ZnO films doped with Mg and Li evaluated for charged particle detectors Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015856  0.64
2013 Mejia I, Salas-Villasenor AL, Cha D, Alshareef HN, Gnade BE, Quevedo-Lopez MA. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors Ieee Transactions On Electron Devices. 60: 327-332. DOI: 10.1109/Ted.2012.2228200  0.64
2013 Jandhyala S, Mordi G, Mao D, Ha MW, Quevedo-Lopez MA, Gnade BE, Kim J. Graphene-ferroelectric hybrid devices for multi-valued memory system Applied Physics Letters. 103. DOI: 10.1063/1.4813264  0.64
2013 Kularatne RS, Taenzler FJ, Magurudeniya HD, Du J, Murphy JW, Sheina EE, Gnade BE, Biewer MC, Stefan MC. Structural variation of donor-acceptor copolymers containing benzodithiophene with bithienyl substituents to achieve high open circuit voltage in bulk heterojunction solar cells Journal of Materials Chemistry A. 1: 15535-15543. DOI: 10.1039/C3Ta13686H  0.64
2013 Iyore OD, Roodenko K, Winkler PS, Noriega JR, Vasselli JJ, Chabal YJ, Gnade BE. Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating Thin Solid Films. 548: 597-602. DOI: 10.1016/J.Tsf.2013.09.062  0.64
2013 Ai Y, Gowrisanker S, Jia H, Quevedo-Lopez M, Alshareef HN, Wallace RM, Gnade BE. Encapsulation of high frequency organic Schottky diodes Thin Solid Films. 531: 509-512. DOI: 10.1016/J.Tsf.2012.12.117  0.64
2013 Martinez-Landeros VH, Gutierrez-Heredia G, Aguirre-Tostado FS, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Degradation of pentacene deposited on gold, aluminum and parylene surfaces: Impact of pentacene thickness Thin Solid Films. 531: 398-403. DOI: 10.1016/J.Tsf.2012.12.061  0.64
2013 Mao D, Mejia I, Salas-Villasenor AL, Singh M, Stiegler H, Gnade BE, Quevedo-Lopez MA. Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics Organic Electronics: Physics, Materials, Applications. 14: 505-510. DOI: 10.1016/J.Orgel.2012.10.035  0.64
2013 Morales-Acosta MD, Alvarado-Beltrán CG, Quevedo-López MA, Gnade BE, Mendoza-Galván A, Ramírez-Bon R. Adjustable structural, optical and dielectric characteristics in sol-gel PMMA-SiO2 hybrid films Journal of Non-Crystalline Solids. 362: 124-135. DOI: 10.1016/J.Jnoncrysol.2012.11.025  0.64
2013 Wang Q, Oswald IWH, Perez MR, Jia H, Gnade BE, Omary MA. Exciton and polaron quenching in doping-free phosphorescent organic light-emitting diodes from a Pt(II)-based fast phosphor Advanced Functional Materials. 23: 5420-5428. DOI: 10.1002/Adfm.201300699  0.64
2013 Carrillo-Castillo A, Aguirre-Tostado FS, Salas-Villasenor A, Mejia I, Gnade BE, Sotelo-Lerma M, Quevedo-Lopez MA. Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications Chalcogenide Letters. 10: 105-111.  0.64
2013 Carrillo-Castillo A, Aguirre-Tostado FS, Salas-Villasenor A, Mejia I, Gnade BE, Sotelo-Lerma M, Quevedo-López MA. Effect of deposition rate on the morphology of CdS films deposited in an ammonia free solution Chalcogenide Letters. 10: 81-86.  0.64
2012 Tan YK, Best SL, Donnelly C, Olweny E, Kapur P, Mir SA, Gnade B, McLeroy S, Pearle MS, Cadeddu JA. Novel iron oxide microparticles used to render stone fragments paramagnetic: assessment of toxicity in a murine model. The Journal of Urology. 188: 1972-7. PMID 22999535 DOI: 10.1016/J.Juro.2012.07.005  0.64
2012 Fernandez R, Tan YK, Kaberle W, Best SL, Olweny EO, Pearle MS, Gnade BE, McElroy SL, Cadeddu JA. Determining a performance envelope for capture of kidney stones functionalized with superparamagnetic microparticles. Journal of Endourology / Endourological Society. 26: 1227-30. PMID 22524431 DOI: 10.1089/End.2011.0598  0.64
2012 Murphy JW, Mejia I, Gnade BE, Quevedo-Lopez MA. Evaluation of CdS interfacial layers in ZnO nanowire/poly(3-hexylthiophene) solar cells Journal of Nanomaterials. 2012. DOI: 10.1155/2012/192456  0.64
2012 Shrestha B, Pieper R, Wondmagegn W, Mao D, Mejia I, Stiegler H, Gnade BE, Quevedo-Lopez M. A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors Proceedings of the Annual Southeastern Symposium On System Theory. 40-44. DOI: 10.1109/SSST.2012.6195142  0.64
2012 Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Gnade BE, Quevedo-Lopez MA. Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs 2012 8th International Caribbean Conference On Devices, Circuits and Systems, Iccdcs 2012. DOI: 10.1109/ICCDCS.2012.6188882  0.64
2012 Gutierrez-Heredia G, Martinez-Landeros VH, Aguirre-Tostado FS, Shah P, Gnade BE, Sotelo-Lerma M, Quevedo-Lopez MA. Full bridge circuit based on pentacene schottky diodes fabricated on plastic substrates Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/8/085013  0.64
2012 Salas-Villasenor AL, Mejia I, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition Applied Physics Letters. 101. DOI: 10.1063/1.4773184  0.64
2012 Murphy JW, Kunnen GR, Mejia I, Quevedo-Lopez MA, Allee D, Gnade B. Optimizing diode thickness for thin-film solid state thermal neutron detectors Applied Physics Letters. 101. DOI: 10.1063/1.4757292  0.64
2012 Bhansali US, Jia H, Oswald IWH, Omary MA, Gnade BE. High efficiency warm-white organic light emitting diodes from a single emitter in graded-doping device architecture Applied Physics Letters. 100. DOI: 10.1063/1.3702452  0.64
2012 Carrillo-Castillo A, Salas-Villasenor A, Mejia I, Aguirre-Tostado S, Gnade BE, Quevedo-López MA. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor Thin Solid Films. 520: 3107-3110. DOI: 10.1016/J.Tsf.2011.12.016  0.64
2012 Charkhkar H, Knaack GL, Gnade BE, Keefer EW, Pancrazio JJ. Development and demonstration of a disposable low-cost microelectrode array for cultured neuronal network recording Sensors and Actuators, B: Chemical. 161: 655-660. DOI: 10.1016/J.Snb.2011.10.086  0.64
2012 Perez MR, Mejia I, Salas-Villasenor AL, Stiegler H, Trachtenberg I, Gnade BE, Quevedo-Lopez MA. Hybrid CMOS thin-film devices based on solution-processed CdS n-TFTs and TIPS-Pentacene p-TFTs Organic Electronics: Physics, Materials, Applications. 13: 3045-3049. DOI: 10.1016/J.Orgel.2012.08.015  0.64
2012 Ratanatawanate C, Perez M, Gnade BE, Balkus KJ. Layer-by-layer assembly of titanate nanosheets/poly- (ethylenimine) on PEN films Materials Letters. 66: 242-245. DOI: 10.1016/J.Matlet.2011.08.089  0.64
2012 Gupta RP, Sharp J, Peng A, Perera S, Ballinger C, Zheng T, Gnade B. Inorganic colloidal solution-based approach to nanocrystal synthesis of (Bi,Sb) 2Te 3 Journal of Electronic Materials. 41: 1573-1578. DOI: 10.1007/S11664-011-1892-6  0.64
2011 Quevedo-Lopez MA, Wondmagegn WT, Alshareef HN, Ramirez-Bon R, Gnade BE. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors. Journal of Nanoscience and Nanotechnology. 11: 5532-8. PMID 21770215 DOI: 10.1166/Jnn.2011.3425  0.64
2011 Xiong K, Sobhani S, Gupta RP, Wang W, Gnade BE, Cho K. First principles study of electronic structures of dopants in Mg 2Si Materials Research Society Symposium Proceedings. 1329: 47-52. DOI: 10.1557/Opl.2011.1239  0.64
2011 Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Horvath J, Stiegler H, Gnade BE, Quevedo-Lopez MA. Low-temperature hybrid CMOS circuits based on chalcogenides and organic TFTs Ieee Electron Device Letters. 32: 1086-1088. DOI: 10.1109/Led.2011.2157801  0.64
2011 Dey A, Avendanno A, Venugopal S, Allee DR, Quevedo M, Gnade B. CMOS TFT Op-Amps: Performance and Limitations Ieee Electron Device Letters. DOI: 10.1109/Led.2011.2121891  0.64
2011 Mendivil-Reynoso T, Berman-Mendoza D, González LA, Castillo SJ, Apolinar-Iribe A, Gnade BE, Quevedo-Lopez M, Ramírez-Bon R. Fabrication and electrical characteristics of TFTs based on chemically deposited CdS films, using glycine as a complexing agent Semiconductor Science and Technology. 26: 115010. DOI: 10.1088/0268-1242/26/11/115010  0.44
2011 Wondmagegn WT, Satyala NT, Mejia-Silva I, Mao D, Gowrisanker S, Alshareef HN, Stiegler HJ, Quevedo-Lopez MA, Pieper RJ, Gnade BE. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene Thin Solid Films. 519: 4313-4318. DOI: 10.1016/J.Tsf.2011.02.014  0.64
2011 Wondmagegn WT, Satyala NT, Stiegler HJ, Quevedo-Lopez MA, Forsythe EW, Pieper RJ, Gnade BE. Simulation based performance comparison of transistors designed using standard photolithographic and coarse printing design specifications Thin Solid Films. 519: 1943-1949. DOI: 10.1016/J.Tsf.2010.10.020  0.64
2011 Fuentes-Fernandez E, Baldenegro-Perez L, Quevedo-Lopez M, Gnade B, Hande A, Shah P, Alshareef HN. Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers Solid-State Electronics. 63: 89-93. DOI: 10.1016/J.Sse.2011.05.027  0.64
2011 Mao D, Mejia I, Stiegler H, Gnade BE, Quevedo-Lopez MA. Fatigue characteristics of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications Organic Electronics: Physics, Materials, Applications. 12: 1298-1303. DOI: 10.1016/J.Orgel.2011.04.011  0.64
2011 Fuentes-Fernandez E, Debray-Mechtaly W, Quevedo-Lopez MA, Gnade B, Rajasekaran A, Hande A, Shah P, Alshareef HN. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks Journal of Electronic Materials. 40: 85-91. DOI: 10.1007/S11664-010-1407-X  0.64
2011 Martínez-Landeros VH, Gnade BE, Quevedo-López MA, Ramírez-Bon R. Permeation studies on transparent multiple hybrid SiO2-PMMA coatings-Al2O3 barriers on PEN substrates Journal of Sol-Gel Science and Technology. 59: 345-351. DOI: 10.1007/S10971-011-2509-5  0.64
2011 Morales-Acosta MD, Quevedo-López MA, Gnade BE, Ramírez-Bon R. PMMA-SiO2 organic-inorganic hybrid films: Determination of dielectric characteristics Journal of Sol-Gel Science and Technology. 58: 218-224. DOI: 10.1007/S10971-010-2380-9  0.64
2011 Wondmagegn WT, Satyala NT, Pieper RJ, Quevedo-Lopez MA, Gowrisanker S, Alshareef HN, Stiegler HJ, Gnade BE. Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors Journal of Computational Electronics. 10: 144-153. DOI: 10.1007/S10825-010-0311-1  0.64
2010 Tracy CR, McLeroy SL, Best SL, Gnade BE, Pearle MS, Cadeddu JA. Rendering stone fragments paramagnetic with iron-oxide microparticles improves the efficiency and effectiveness of endoscopic stone fragment retrieval. Urology. 76: 1266.e10-4. PMID 21056275 DOI: 10.1016/J.Urology.2010.04.067  0.64
2010 Baldenegro-Perez LA, Debray-Mechtaly W, Fuentes-Fernandez E, Quevedo-Lopez MA, Alshareefe HN, Shah P, Gnade BA. Study on the microstructure and electrical properties of Pb(Zr 0.53 Ti0.47)O3 thin-films Materials Science Forum. 644: 97-100. DOI: 10.4028/Www.Scientific.Net/Msf.644.97  0.64
2010 Ramos-González R, Garcia-Cerda LA, Alshareef HN, Gnade BE, Quevedo-Lopez MA. Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods Materials Science Forum. 644: 75-78. DOI: 10.4028/Www.Scientific.Net/Msf.644.75  0.64
2010 Morales-Acosta MD, Quevedo-Lopez MA, Alshareef HN, Gnade B, Ramirez-Bon R. Dielectric properties of PMMA-SiO2 hybrid films Materials Science Forum. 644: 25-28. DOI: 10.4028/Www.Scientific.Net/Msf.644.25  0.64
2010 García-Cerda LA, Puente-Urbina BA, Quevedo-López MA, Gnade BE, Baldenegro-Pérez L, Alshareef HN, Hernández-Landaverde MA. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route Materials Science Forum. 644: 113-116. DOI: 10.4028/Www.Scientific.Net/Msf.644.113  0.64
2010 Salas-Villasenor AL, Mejia I, Hovarth J, Alshareef HN, Cha DK, Ramirez-Bon R, Gnade BE, Quevedo-Lopez MA. Impact of gate dielectric in carrier mobility in low temperature chalcogenide thin film transistors for flexible electronics Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3456551  0.64
2010 Gupta RP, Xiong K, White JB, Cho K, Alshareef HN, Gnade BE. Low resistance ohmic contacts to Bi2 Te3 using Ni and Co metallization Journal of the Electrochemical Society. 157: H666-H670. DOI: 10.1149/1.3385154  0.64
2010 Venugopal SM, Allee DR, Quevedo-Lopez M, Gnade B, Forsythe E, Morton D. Flexible electronics: What can it do? What should it do? Ieee International Reliability Physics Symposium Proceedings. 644-649. DOI: 10.1109/IRPS.2010.5488757  0.64
2010 Gutiérrez-Heredia G, González LA, Alshareef HN, Gnade BE, Quevedo-López M. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115001  0.64
2010 Xiong K, Lee G, Gupta RP, Wang W, Gnade BE, Cho K. Behaviour of group IIIA impurities in PbTe: Implications to improve thermoelectric efficiency Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/40/405403  0.64
2010 Xiong K, Wang W, Alshareef HN, Gupta RP, White JB, Gnade BE, Cho K. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/11/115303  0.64
2010 Mao D, Mejia I, Stiegler H, Gnade BE, Quevedo-Lopez MA. Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics Journal of Applied Physics. 108. DOI: 10.1063/1.3500428  0.64
2010 Hundt N, Palaniappan K, Sista P, Murphy JW, Hao J, Nguyen H, Stein E, Biewer MC, Gnade BE, Stefan MC. Synthesis and characterization of polythiophenes with alkenyl substituents Polymer Chemistry. 1: 1624-1632. DOI: 10.1039/C0Py00176G  0.64
2010 Palaniappan K, Murphy JW, Sista P, Gnade BE, Biewer MC, Stefan MC. Poly(3-hexylthiophene)-CdSe quantum dot bulk heterojunction solar cells: The influence of the functional end-group of the polymer Acs National Meeting Book of Abstracts. DOI: 10.1021/Ma9006285  0.64
2010 Sista P, Nguyen H, Murphy JW, Hao J, Dei DK, Palaniappan K, Servello J, Kularatne RS, Gnade BE, Xue B, Dastoor PC, Biewer MC, Stefan MC. Synthesis and electronic properties of semiconducting polymers containing benzodithiophene with alkyl phenylethynyl substituents Macromolecules. 43: 8063-8070. DOI: 10.1021/Ma101709H  0.64
2010 Liu HA, Gnade BE, Balkus KJ. Preparation of a delivery system for smart coatings by electrostatic deposition Acs Symposium Series. 1050: 31-44. DOI: 10.1021/bk-2010-1050.ch003  0.64
2010 Tracy CR, McLeroy SL, Gnade BE, Best SL, Pearle MS, Cadeddu JA. Reply Urology. 76: e3. DOI: 10.1016/j.urology.2010.06.031  0.64
2010 Mao D, Quevedo-Lopez MA, Stiegler H, Gnade BE, Alshareef HN. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics Organic Electronics: Physics, Materials, Applications. 11: 925-932. DOI: 10.1016/J.Orgel.2010.02.012  0.64
2010 Gupta RP, Xiong K, White JB, Cho K, Gnade BE. Improvement in contact resistivity to thin film Bi2Te 3 Materials Research Society Symposium Proceedings. 1267: 147-152.  0.64
2010 Xiong K, Gupta RP, White JB, Gnade BE, Cho K. Impact of dopants on the PbTe thermoelectric efficiency Materials Research Society Symposium Proceedings. 1267: 139-145.  0.64
2009 Trivedi K, Bhansali US, Gnade B, Hu W. The fabrication of high density nanochannel organic light emitting diodes with reduced charge spreading Nanotechnology. 20. PMID 19738307 DOI: 10.1088/0957-4484/20/40/405204  0.64
2009 Quevedo-Lopez MA, Gowrisanker S, Allee DR, Venugopal S, Krishna R, Kaftanoglu K, Alshareef HN, Gnade BE. Novel materials and integration schemes for CMOS-based circuits for flexible electronics Ecs Transactions. 25: 503-511. DOI: 10.1149/1.3203989  0.64
2009 Gupta RP, Iyore OD, Xiong K, White JB, Cho K, Alshareef HN, Gnade BE. Interface characterization of cobalt contacts on bismuth selenium telluride for thermoelectric devices Electrochemical and Solid-State Letters. 12: H395-H397. DOI: 10.1149/1.3196237  0.64
2009 Gupta RP, White JB, Iyore OD, Chakrabarti U, Alshareef HN, Gnade BE. Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride Electrochemical and Solid-State Letters. 12: H302-H304. DOI: 10.1149/1.3143918  0.64
2009 Gowrisanker S, Ai Y, Jia H, Quevedo-Lopez MA, Alshareef HN, Trachtenberg I, Stiegler H, Edwards H, Barnett R, Gnade BE. Organic thin-film transistors with low threshold voltage variation on low-temperature substrates Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3046068  0.64
2009 Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade B, Venugopal S, Krishna R, Kaftanoglu K, Allee D. Low temperature integration of hybrid CMOS devices on plastic substrates 2009 Flexible Electronics and Displays Conference and Exhibition, Flex 2009. DOI: 10.1109/FEDC.2009.5069280  0.64
2009 Bhansali US, Polikarpov E, Swensen JS, Chen WH, Jia H, Gaspar DJ, Gnade BE, Padmaperuma AB, Omary MA. High-efficiency turquoise-blue electrophosphorescence from a Pt(II)-pyridyltriazolate complex in a phosphine oxide host Applied Physics Letters. 95. DOI: 10.1063/1.3268434  0.64
2009 Bhansali US, Jia H, Lopez MAQ, Gnade BE, Chen WH, Omary MA. Controlling the carrier recombination zone for improved color stability in a two-dopant fluorophore/phosphor white organic light-emitting diode Applied Physics Letters. 94. DOI: 10.1063/1.3089867  0.64
2009 Palaniappan K, Murphy JW, Khanam N, Horvath J, Alshareef H, Quevedo-Lopez M, Biewer MC, Park SY, Kim MJ, Gnade BE, Stefan MC. Poly(3-hexylthiophene) - CdSe quantum dot bulk heterojunction solar cells: Influence of the functional end-group of the polymer Macromolecules. 42: 3845-3848. DOI: 10.1021/ma9006285  0.64
2009 Bhansali US, Quevedo Lopez MA, Jia H, Alshareef HN, Cha D, Kim MJ, Gnade BE. Characterization of organic thin films using transmission electron microscopy and Fourier Transform Infra Red spectroscopy Thin Solid Films. 517: 5825-5829. DOI: 10.1016/J.Tsf.2009.03.002  0.64
2009 Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE, Venugopal S, Krishna R, Kaftanoglu K, Allee DR. A novel low temperature integration of hybrid CMOS devices on flexible substrates Organic Electronics: Physics, Materials, Applications. 10: 1217-1222. DOI: 10.1016/J.Orgel.2009.06.012  0.64
2009 Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE. Time dependent breakdown characteristics of parylene dielectric in metal-insulator-metal capacitors Organic Electronics: Physics, Materials, Applications. 10: 1024-1027. DOI: 10.1016/J.Orgel.2009.05.003  0.64
2009 Iyore OD, Lee TH, Gupta RP, White JB, Alshareef HN, Kim MJ, Gnade BE. Interface characterization of nickel contacts to bulk bismuth tellurium selenide Surface and Interface Analysis. 41: 440-444. DOI: 10.1002/Sia.3046  0.64
2009 Xiong K, Wang W, Alshareef HN, Gupta RP, White JB, Gnade BE, Cho K. First principles study of metal/Bi2Te3 interfaces: Implications to reduce contact resistance Materials Research Society Symposium Proceedings. 1166: 103-108.  0.64
2008 Lee TH, Frolesca HC, Kang SJ, Shim JJ, Song KH, Kang HB, Lee BY, Wallace RM, Gnade BE, Kim MJ. Fabrication process for double barrier Si-based quantum well Resonant Tunneling diodes (RTD) by UHV wafer bonding Ecs Transactions. 16: 525-530. DOI: 10.1149/1.2982907  0.64
2008 Alshareef HN, Quevedo-Lopez M, Wen HC, Huffman C, El-Bouanani M, Gnade BE. Impact of carbon incorporation on the effective work function of WN and TaN metal gate electrodes Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2908579  0.64
2008 Gowrisanker S, Ai Y, Quevedo-Lopez MA, Jia H, Vogel E, Gnade B. A gate dielectric last approach to integrate organic based devices on plastic substrates Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, Flex. DOI: 10.1109/FEDC.2008.4483882  0.64
2008 Zhao P, Kim MJ, Gnade BE, Wallace RM. Dopant effects on the thermal stability of FUSI NiSi Microelectronic Engineering. 85: 54-60. DOI: 10.1016/J.Mee.2007.05.001  0.64
2008 Liu HA, Gnade BE, Balkus KJ. A delivery system for self-healing inorganic films Advanced Functional Materials. 18: 3620-3629. DOI: 10.1002/Adfm.200701470  0.64
2007 Zheng T, Jia H, Wallace RM, Gnade BE. C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe. The Review of Scientific Instruments. 78: 104702. PMID 17979444 DOI: 10.1063/1.2789660  0.64
2007 Govindarajan S, Böscke TS, Kirsch PD, Quevedo-Lopez MA, Sivasubramani P, Song SC, Wallace RW, Gnade BE, Hung PY, Price J, Schröder U, Ramanathan S, Lee BH, Jammy R. Higher permittivity rare earth-doped HfO2 and ZrO2 dielectrics for logic and memory applications International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VTSA.2007.378912  0.64
2007 Sivasubramani P, Böscke TS, Huang J, Young CD, Kirsch PD, Krishnan SA, Quevedo-Lopez MA, Govindarajan S, Ju BS, Harris HR, Lichtenwalner DJ, Jur JS, Kingon AI, Kim J, Gnade BE, et al. Dipole moment model explaining nFET vt tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics Digest of Technical Papers - Symposium On Vlsi Technology. 68-69. DOI: 10.1109/VLSIT.2007.4339730  0.64
2007 Böscke TS, Govindarajan S, Kirsch PD, Hung PY, Krug C, Lee BH, Heitmann J, Schröder U, Pant G, Gnade BE, Krautschneider WH. Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors Applied Physics Letters. 91. DOI: 10.1063/1.2771376  0.64
2007 Govindarajan S, Böscke TS, Sivasubramani P, Kirsch PD, Lee BH, Tseng HH, Jammy R, Schröder U, Ramanathan S, Gnade BE. Higher permittivity rare earth doped Hf O2 for sub- 45-nm metal-insulator-semiconductor devices Applied Physics Letters. 91. DOI: 10.1063/1.2768002  0.64
2007 Ai Y, Gowrisanker S, Jia H, Trachtenberg I, Vogel E, Wallace RM, Gnade BE, Barnett R, Stiegler H, Edwards H. 14 MHz organic diodes fabricated using photolithographic processes Applied Physics Letters. 90. DOI: 10.1063/1.2752533  0.64
2007 Sivasubramani P, Kim J, Kim MJ, Gnade BE, Wallace RM. Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100) Journal of Applied Physics. 101. DOI: 10.1063/1.2743818  0.64
2007 Zhao P, Kim MJ, Gnade BE, Wallace RM. Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high- κ gate stacks Journal of Applied Physics. 101. DOI: 10.1063/1.2434808  0.64
2007 Lee T, Cha D, Wang J, Jeon J, Kim J, Wallace R, Gnade B, Kim M. HRTEM Study on the Interface of Si-based Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding Technology Microscopy and Microanalysis. 13: 804-805. DOI: 10.1017/S1431927607078592  0.52
2007 Jia H, Gross EK, Wallace RM, Gnade BE. Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes Organic Electronics: Physics, Materials, Applications. 8: 44-50. DOI: 10.1016/J.Orgel.2006.10.009  0.64
2006 Hussain MM, Quevedo-Lopez MA, Alshareef HN, Larison D, Mathur K, Gnade BE. Deposition method-induced stress effect on ultrathin titanium nitride etch characteristics Electrochemical and Solid-State Letters. 9: 361-363. DOI: 10.1149/1.2359100  0.64
2006 Kim MJ, Lee TH, Kim J, Wallace RM, Gnade BE. Si-based resonant tunneling devices using UHV wafer bonding Ecs Transactions. 3: 75. DOI: 10.1149/1.2357056  0.64
2006 Zhao P, Trachtenberg I, Kim MJ, Gnade BE, Wallace RM. Ni diffusion studies from fully-silicided NiSi into Si Electrochemical and Solid-State Letters. 9. DOI: 10.1149/1.2167927  0.64
2006 Jia H, Gowrisanker S, Pant GK, Wallace RM, Gnade BE. Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1228-1232. DOI: 10.1116/1.2202858  0.64
2006 Kirsch PD, Quevedo MA, Pant G, Krishnan S, Song SC, Li HJ, Peterson JJ, Lee BH, Wallace RW, Kim M, Gnade BE. Relationship of HfO2 material properties and transistor performance International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 113-114. DOI: 10.1109/VTSA.2006.251090  0.64
2006 Böscke TS, Govindarajan S, Fachmann C, Heitmann J, Avellán A, Schröder U, Kudelka S, Kirsch PD, Krug C, Hung PY, Song SC, Ju BS, Price J, Pant G, Gnade BE, et al. Tetragonal phase stabilization by doping as an enabler of thermally stable HfO2 based MIM and MIS capacitors for sub 50nm deep trench DRAM Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.347011  0.64
2006 Kirsch PD, Quevedo-Lopez MA, Krishnan SA, Krug C, AlShareef H, Park CS, Harris R, Moumen N, Neugroschel A, Bersuker G, Lee BH, Wang JG, Pant G, Gnade BE, Kim MJ, et al. Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346862  0.64
2006 Hussain MM, Quevedo-Lopez MA, Alshareef HN, Wen HC, Larison D, Gnade B, El-Bouanani M. Thermal annealing effects on a representative high-k/metal film stack Semiconductor Science and Technology. 21: 1437-1440. DOI: 10.1088/0268-1242/21/10/012  0.64
2006 Sivasubramani P, Lee TH, Kim MJ, Kim J, Gnade BE, Wallace RM, Edge LF, Schlom DG, Stevie FA, Garcia R, Zhu Z, Griffis DP. Thermal stability of lanthanum scandate dielectrics on Si(100) Applied Physics Letters. 89. DOI: 10.1063/1.2405418  0.64
2006 Kirsch PD, Quevedo-Lopez MA, Krishnan SA, Lee BH, Pant G, Kim MJ, Wallace RM, Gnade BE. Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2392992  0.64
2006 Sivasubramani P, Kim J, Kim MJ, Gnade BE, Wallace RM. Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100) Applied Physics Letters. 89. DOI: 10.1063/1.2361170  0.64
2006 Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD, Krishnan S. Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2226991  0.64
2006 Alshareef HN, Choi K, Wen HC, Luan H, Harris H, Senzaki Y, Majhi P, Lee BH, Jammy R, Aguirre-Tostado S, Gnade BE, Wallace RM. Composition dependence of the work function of Ta1-xAl xNymetal gates Applied Physics Letters. 88. DOI: 10.1063/1.2174836  0.64
2006 Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD. Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2165182  0.64
2006 Cha DK, Lee B, Huang J, Kim J, Wallace RM, Gnade BE, Kim MJ. Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM Microscopy and Microanalysis. 12: 1272-1273. DOI: 10.1017/S1431927606068887  0.64
2006 Jeon J, Gory I, Skidmore G, Kim MJ, Gnade BE. Demonstration of pick and place assembly for scaled MEMS devices Microscopy and Microanalysis. 12: 560-561. DOI: 10.1017/S143192760606884X  0.64
2006 Jia H, Pant GK, Gross EK, Wallace RM, Gnade BE. Gate induced leakage and drain current offset in organic thin film transistors Organic Electronics: Physics, Materials, Applications. 7: 16-21. DOI: 10.1016/J.Orgel.2005.10.003  0.64
2006 Zheng T, Jia H, Wallace RM, Gnade BE. Characterization of conductance under finite bias for a self-assembled monolayer coated Au quantized point contact Applied Surface Science. 253: 1265-1268. DOI: 10.1016/J.Apsusc.2006.01.070  0.64
2006 Zheng T, Jia H, Wallace RM, Gnade BE. Stabilization of Au quantum point contacts by self-assembled monolayers Applied Surface Science. 252: 8261-8263. DOI: 10.1016/J.Apsusc.2005.10.061  0.64
2006 Quevedo-Lopez MA, Kirsch PD, Krishnan S, Alshareef HN, Barnett J, Harris HR, Neugroschel A, Aguirre-Tostado FS, Gnade BE, Kim MJ, Wallace RM, Lee BH. Systematic gate stack optimization to maximize mobility with HfSiON EOT scaling Essderc 2006 - Proceedings of the 36th European Solid-State Device Research Conference. 2006: 113-116.  0.64
2005 Panhuis Mi, Gowrisanker S, Vanesko DJ, Mire CA, Jia H, Xie H, Baughman RH, Musselman IH, Gnade BE, Dieckmann GR, Draper RK. Nanotube network transistors from peptide-wrapped single-walled carbon nanotubes. Small (Weinheim An Der Bergstrasse, Germany). 1: 820-3. PMID 17193531 DOI: 10.1002/Smll.200500001  0.64
2005 Jakubowicz A, Jia H, Wallace RM, Gnade BE. Adsorption kinetics of p-nitrobenzenethiol self-assembled monolayers on a gold surface. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 950-5. PMID 15667173 DOI: 10.1021/la048308h  0.64
2005 Nistorica C, Gory I, Skidmore GD, Mantiziba FM, Gnade BE. Friction and wear properties of ALD coated MEMS Materials Research Society Symposium Proceedings. 841: 265-270. DOI: 10.1557/Proc-841-R9.16  0.64
2005 Nistorica C, Liu JF, Gory I, Skidmore GD, Mantiziba FM, Gnade BE, Kim J. Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 836-840. DOI: 10.1116/1.1885022  0.64
2005 Quevedo-Lopez MA, Krishnan SA, Kirsch PD, Pant G, Gnade BE, Wallace RM. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150586  0.64
2005 Kim MJ, Wallace RM, Gnade BE. HRTEM for nano-electronic materials research Aip Conference Proceedings. 788: 558-564. DOI: 10.1063/1.2063018  0.64
2005 Sivasubramani P, Zhao P, Kim MJ, Gnade BE, Wallace RM, Edge LF, Schlom DG, Parsons GN, Misra V. Thermal stability studies of advanced gate stack structures on Si (100) Aip Conference Proceedings. 788: 156-160. DOI: 10.1063/1.2062955  0.64
2005 Zhao P, Kim J, Kim MJ, Gnade BE, Wallace RM. Thermally stable Mo XSi YN Z as a metal gate electrode for advanced CMOS devices Aip Conference Proceedings. 788: 152-155. DOI: 10.1063/1.2062954  0.64
2005 Sivasubramani P, Kim MJ, Gnade BE, Wallace RM, Edge LF, Schlom DG, Craft HS, Maria JP. Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001) Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1928316  0.64
2005 Quevedo-Lopez MA, Visokay MR, Chambers JJ, Bevan MJ, LiFatou A, Colombo L, Kim MJ, Gnade BE, Wallace RM. Dopant penetration studies through Hf silicate Journal of Applied Physics. 97. DOI: 10.1063/1.1846138  0.64
2005 Ranade A, D'Souza NA, Wallace RM, Gnade BE. High sensitivity gas permeability measurement system for thin plastic films Review of Scientific Instruments. 76. DOI: 10.1063/1.1823792  0.64
2005 Liu JF, Nistorica C, Gory I, Skidmore G, Mantiziba FM, Gnade BE. Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices Thin Solid Films. 492: 6-12. DOI: 10.1016/J.Tsf.2005.06.014  0.64
2005 Driemeier C, Bastos KP, Soares GV, Miotti L, Pezzi RP, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM. Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics Applied Physics a: Materials Science and Processing. 80: 1045-1047. DOI: 10.1007/S00339-004-3037-8  0.64
2005 Quevedo-Lopez MA, Krishnan SA, Kirsch PD, Li HJ, Sim JH, Huffman C, Peterson JJ, Lee BH, Pant G, Gnade BE, Kim MJ, Wallace RM, Guo D, Bu H, Ma TP. High performance gate first HfSiON dielectric satisfying 45nm node requirements Technical Digest - International Electron Devices Meeting, Iedm. 2005: 425-428.  0.64
2004 Addepalli S, Sivasubramani P, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM. Deposition of Hf-silicate gate dielectric on Si xGe 1-x(100): Detection of interfacial layer growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 616-623. DOI: 10.1116/1.1710494  0.64
2004 Punchaipetch P, Pant G, Kim MJ, Wallace RM, Gnade BE. Growth and characterization of hafnlum silicate films prepared by UV/ozone oxidation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 395-400. DOI: 10.1116/1.1649346  0.64
2004 Punchaipetch P, Pant G, Quevedo-Lopez MA, Yao C, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Low-temperature deposition of hafnium silicate gate dielectrics Ieee Journal On Selected Topics in Quantum Electronics. 10: 89-100. DOI: 10.1109/Jstqe.2004.824109  0.64
2004 Pezzi RP, Miotti L, Bastos KP, Soares GV, Driemeier C, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM, Rotondaro A, Visokay JM, Chambers JJ, Colombo L. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon Applied Physics Letters. 85: 3540-3542. DOI: 10.1063/1.1801682  0.64
2004 Blum AS, Soto CM, Wilson CD, Cole JD, Kim M, Gnade B, Chatterji A, Ochoa WF, Lin T, Johnson JE, Ratna BR. Cowpea mosaic virus as a scaffold for 3-D patterning of gold nanoparticles Nano Letters. 4: 867-870. DOI: 10.1021/Nl0497474  0.64
2004 Kim MJ, In Het Panhuis M, Gupta R, Blum AS, Ratna BR, Gnade BE, Wallace RM. Nano-patterning and manipulation of genetically engineered virus nanoblocks Microscopy and Microanalysis. 10: 26-27. DOI: 10.1017/S1431927604885441  0.64
2004 Pant G, Punchaipetch P, Kim MJ, Wallace RM, Gnade BE. Low temperature UV/ozone oxidation formation of HfSiON gate dielectric Thin Solid Films. 460: 242-246. DOI: 10.1016/J.Tsf.2004.01.109  0.64
2004 Addepalli S, Sivasubramani P, Kim MJ, Gnade BE, Wallace RM. The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface Journal of Electronic Materials. 33: 1016-1021. DOI: 10.1007/S11664-004-0029-6  0.44
2004 Fruehauf N, Chalamala BR, Gnade BE, Jang J. Materials Research Society Symposium Proceedings: Preface Materials Research Society Symposium Proceedings. 814.  0.64
2004 Addepalli S, Sivasubramani P, Kim MJ, Gnade BE, Wallace RM. The electrical properties and stability of the hafnium silicate/Si 0.8Ge 0.2(100) interface Journal of Electronic Materials. 33: 1016-1021.  0.64
2004 Jeon IS, Lee J, Zhao P, Sivasubramani P, Oh T, Kim HJ, Cha D, Huang J, Kim MJ, Gnade BE, Kim J, Wallace RM. A novel methodology on tuning work function of metal gate using stacking Bi-metal layers Technical Digest - International Electron Devices Meeting, Iedm. 303-306.  0.64
2003 Ranade A, D'Souza NA, Gnade B, Dharia A. Nylon-6 and Montmorillonite-Layered Silicate (MLS) nanocomposites Journal of Plastic Film and Sheeting. 19: 271-285. DOI: 10.1177/8756087903042810  0.64
2003 Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, LiFatou A, Chambers JJ, Colombo L. Erratum: “Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films” [Appl. Phys. Lett. 82, 4669 (2003)] Applied Physics Letters. 83: 1679-1679. DOI: 10.1063/1.1606888  0.64
2003 Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, LiFatou A, Chambers JJ, Colombo L. Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films Applied Physics Letters. 82: 4669-4671. DOI: 10.1063/1.1586483  0.64
2003 Kim MJ, Huang J, Cha DK, Quevedo-Lopez MA, Wallace RM, Gnade BE. Thermal stability of Hf-based high-κ dielectric films on Si(100) Microscopy and Microanalysis. 9: 506-507. DOI: 10.1017/S1431927603442530  0.64
2003 Punchaipetch P, Pant G, Quevedo-Lopez M, Zhang H, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide Thin Solid Films. 425: 68-71. DOI: 10.1016/S0040-6090(02)01306-8  0.64
2003 Fruehauf N, Chalamala BR, Gnade BE, Jang J. Materials Research Society Symposium - Proceedings: Preface Materials Research Society Symposium - Proceedings. 769.  0.64
2003 Quevedo-Lopez M, Gnade BE, Wallace RM. Challenges for the integration of high-κ gate dielectrics Proceedings - Electrochemical Society. 28: 3-11.  0.64
2002 Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Colombo L, Bevan M, Douglas M, Visokay M, Wallace RM. Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates Materials Research Society Symposium - Proceedings. 686: 223-228. DOI: 10.1557/Proc-686-A9.5  0.64
2002 Quevedo-Lopez MA, El-Bouanani M, Wallace RM, Gnade BE. Wet chemical etching studies of Zr and Hf-silicate gate dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1891-1897. DOI: 10.1116/1.1507343  0.64
2002 Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, Li-Fatou A, Bevan MJ, Colombo L. Phosphorus and arsenic penetration studies through HfSixO y and HfSixOyNz films Applied Physics Letters. 81: 1609-1611. DOI: 10.1063/1.1502910  0.64
2002 Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Interdiffusion studies for HfSi xO y and ZrSi xO y on Si Journal of Applied Physics. 92: 3540-3550. DOI: 10.1063/1.1501752  0.64
2002 Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, Lifatou A, Bevan MJ, Colombo L. Boron penetration studies from p+ polycrystalline Si through HfSixOy Applied Physics Letters. 81: 1074-1076. DOI: 10.1063/1.1498872  0.64
2002 Kim MJ, Blum AS, Gnade B, Ratna BR. Virus nanoblocks for molecular electronics Microscopy and Microanalysis. 8: 1116-1117. DOI: 10.1017/S1431927602103655  0.44
2002 Ranade A, D'Souza NA, Gnade B. Exfoliated and intercalated polyamide-imide nanocomposites with montmorillonite Polymer. 43: 3759-3766. DOI: 10.1016/S0032-3861(02)00106-4  0.64
2002 Gnade BE, Pant G, Punchaipetch P, Wallace RM. Low temperature deposition of Hafnium silicate gate dielectrics for TFTs on plastic substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 305-306.  0.64
2001 Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Colombo L. Hafnium interdiffusion studies from hafnium silicate into silicon Applied Physics Letters. 79: 4192-4194. DOI: 10.1063/1.1425466  0.64
2001 Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Thermally induced Zr incorporation into Si from zirconium silicate thin films Applied Physics Letters. 79: 2958-2960. DOI: 10.1063/1.1415418  0.64
2000 Chalamala BR, Reuss RH, Gnade BE. Displaying a bright future Ieee Circuits and Devices Magazine. 16: 19-30. DOI: 10.1109/101.845909  0.64
2000 Chalamala BR, Wei Y, Reuss RH, Aggarwal S, Perusse SR, Gnade BE, Ramesh R. Stability and chemical composition of thermally grown iridium-oxide thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1919-1922.  0.64
1999 Chalamala BR, Wallace RM, Gnade BE. Interaction of H2O with active Spindt-type molybdenum field emitter arrays Journal of Vacuum Science & Technology B. 17: 303-305. DOI: 10.1116/1.590554  0.44
1999 Bernhard JM, Rouse AA, Sosa ED, Gnade BE, Golden DE, Chalamala BR. A compact electron energy analyzer for measuring field emission energy distributions Review of Scientific Instruments. 70: 3299-3302. DOI: 10.1063/1.1149907  0.64
1999 Chalamala BR, Wei Y, Reuss RH, Aggarwal S, Gnade BE, Ramesh R, Bernhard JM, Sosa ED, Golden DE. Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films Applied Physics Letters. 74: 1394-1396.  0.64
1998 Chalamala BR, Wallace RM, Gnade BE. Effect of CH4 on the electron emission characteristics of active molybdenum field emitter arrays Journal of Vacuum Science & Technology B. 16: 3073-3076. DOI: 10.1116/1.590444  0.44
1998 Chalamala BR, Wallace RM, Gnade BE. Effect of O2 on the electron emission characteristics of active molybdenum field emission cathode arrays Journal of Vacuum Science & Technology B. 16: 2859-2865. DOI: 10.1116/1.590285  0.44
1998 Chalamala BR, Wallace RM, Gnade BE. Surface conditioning of active molybdenum field emission cathode arrays with H2 and helium Journal of Vacuum Science & Technology B. 16: 2855-2858. DOI: 10.1116/1.590284  0.44
1998 Chalamala BR, Wallace RM, Gnade BE. Poisoning of Spindt-type molybdenum field emitter arrays by CO2 Journal of Vacuum Science & Technology B. 16: 2866-2870. DOI: 10.1116/1.590240  0.44
1998 Chalamala BR, Wallace RM, Gnade BE. Surface conditioning of active molybdenum field emission cathode arrays with H2 and helium Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2855-2858.  0.64
1998 Chalamala BR, Wallace RM, Gnade BE. Effect of O2 on the electron emission characteristics of active molybdenum field emission cathode arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2859-2865.  0.64
1998 Chalamala BR, Wallace RM, Gnade BE. Effect of CH4 on the electron emission characteristics of active molybdenum field emitter arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3073-3076.  0.64
1998 Chalamala BR, Wallace RM, Gnade BE. Poisoning of Spindt-type molybdenum field emitter arrays by CO2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2866-2870.  0.64
1998 Bernhard JM, Rouse A, Sosa ED, Golden DE, Chalamala BR, Aggarwal S, Gnade BE, Ramesh R. Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 32-33.  0.64
1997 Balkus KJ, Ball LJ, Gnade BE, Anthony JM. A Capacitance Type Chemical Sensor Based on AlPO4-5 Molecular Sieves Chemistry of Materials. 9: 380-386. DOI: 10.1021/Cm960041N  0.64
1997 Balkus KJ, Ball LJ, Gimon-Kinsel ME, Mark Anthony J, Gnade BE. A capacitance-type chemical sensor that employs VAPO-5, MnAPO-5 and MAPO-36 molecular sieves as the dielectric phase Sensors and Actuators, B: Chemical. 42: 67-79. DOI: 10.1016/S0925-4005(97)80314-0  0.64
1996 Vanheusden K, Warren WL, Seager CH, Tallant DR, Voigt JA, Gnade BE. Mechanisms behind green photoluminescence in ZnO phosphor powders Journal of Applied Physics. 79: 7983-7990. DOI: 10.1063/1.362349  0.64
1995 Balkus KJ, Sottile LJ, Nguyen H, Riley SJ, Gnade BE. Molecular sieve based chemical sensors Materials Research Society Symposium - Proceedings. 371: 33-38. DOI: 10.1557/Proc-371-33  0.64
1995 Zhang L, Coffer JL, Gnade BE, Xu DX, Pinizzotto RF. Effects of local ambient atmosphere on the stability of electroluminescent porous silicon diodes Journal of Applied Physics. 77: 5936-5941. DOI: 10.1063/1.359550  0.64
1995 Zhao ZY, Arrale AM, Li SL, McDaniel FD, Matteson S, Weathers DL, Anthony JM, Gnade B. Correlation between energy loss and ion-induced electron emission of 1 MeV protons channeled along the 〈100〉 axis of a thin silicon crystal Nuclear Inst. and Methods in Physics Research, B. 99: 30-34. DOI: 10.1016/0168-583X(95)00340-1  0.64
1995 Balkus KJ, Sottile LJ, Riley SJ, Gnade BE. The preparation and characterization of AlPO4 thin films via laser ablation of AlPO4-H4 Thin Solid Films. 260: 4-9. DOI: 10.1016/0040-6090(95)09482-2  0.64
1995 Smith DM, Anderson J, Cho CC, Gnade BE. Preparation of low-density xerogels at ambient pressure for low K dielectrics Materials Research Society Symposium - Proceedings. 371: 261-266.  0.64
1994 Balkus KJ, Riley SJ, Gnade BE. Molecular sieve thin films via laser ablation Materials Research Society Symposium - Proceedings. 351: 437-442. DOI: 10.1557/Proc-351-437  0.64
1994 Yan J, Shih S, Jung KH, Kwong DL, Kovar M, White JM, Gnade BE, Magel L. Study of thermal oxidation and nitrogen annealing of luminescent porous silicon Applied Physics Letters. 64: 1374-1376. DOI: 10.1063/1.111939  0.64
1994 Poojary DM, Balkus KJ, Riley SJ, Gnade BE, Clearfield A. Synthesis and ab initio structure determination of AlPO4·H2OH4 from powder diffraction data Microporous Materials. 2: 245-250. DOI: 10.1016/0927-6513(93)E0059-P  0.64
1993 Hanawa T, Gnade BE, Ferracane JL, Okabe T, Watari F. Compositions of surface layers formed on amalgams in air, water, and saline Dental Materials Journal. 12: 118-126. PMID 8004906 DOI: 10.4012/Dmj.12.118  0.64
1993 Jung KH, Shih S, Kwong DL, Cho CC, Gnade BE. Visible photoluminescence and microstructure of annealed and chemically etched amorphous Si Materials Research Society Symposium Proceedings. 283: 33-38.  0.64
1992 Cho CC, Liu HY, Gnade BE, Kim TS, Nishioka Y. Epitaxial relations and electrical properties of low-temperature-grown CaF2 on Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 769-774. DOI: 10.1116/1.578161  0.64
1992 Cho CC, Kim TS, Gnade BE, Liu HY, Nishioka Y. Electrical properties of low-temperature-grown CaF2 on Si(111) Applied Physics Letters. 60: 338-340. DOI: 10.1063/1.106650  0.64
1992 Chourasia AR, Chopra DR, Cho CC, Gnade BE. Angle resolved X-ray photoemission study of CaF2/Si(111) interfaces Surface Science. 275: 424-432. DOI: 10.1016/0039-6028(92)90815-N  0.64
1991 Douglas MA, Gnade BE. Photostimulated Removal of Trace Metals Journal of the Electrochemical Society. 138: 2799-2802. DOI: 10.1149/1.2086059  0.64
1991 Nishioka Y, Cho CC, Brown GA, Summerfelt SR, Gnade BE. Radiation characteristics of epitaxial CaF<inf>2</inf> on silicon Ieee Transactions On Nuclear Science. 38: 1265-1270. DOI: 10.1109/23.124103  0.64
1991 Balkus KJ, Welch AA, Gnade BE. The encapsulation of Rh(III) phthalocyanines in zeolites X and Y Journal of Inclusion Phenomena and Molecular Recognition in Chemistry. 10: 141-151. DOI: 10.1007/Bf01041647  0.64
1990 Smith PB, Gnade BE, Marble DK. Hydrogen in metallo-organic chemically vapor-deposited ZnS thin films determined by nuclear resonance reaction analysis Thin Solid Films. 193: 280-288. DOI: 10.1016/S0040-6090(05)80037-9  0.64
1990 Balkus KJ, Welch AA, Gnade BE. The preparation and characterization of Rh(III) SALEN complexes encapsulated in zeolites X and Y Zeolites. 10: 722-729. DOI: 10.1016/0144-2449(90)90053-T  0.64
1990 Cho CC, Liu HY, Gnade BE, Chen CE. Substrate orientation and processing effects on strained CaF2/Si grown by molecular beam epitaxy Conference On Solid State Devices and Materials. 1167-1168.  0.64
1990 Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Gnade BE, Frensley WR. Characterization of unintentionally-ordered superlattice resonant-tunneling diodes Second International Conference On Indium Phosphide and Related Materials. 416-423.  0.64
1989 Duggan JL, McDaniel FD, Matteson S, Golden DE, Anthony JM, Gnade B, Keenan JA. The University of North Texas Ion Beam Modification and Analysis Laboratory Nuclear Inst. and Methods in Physics Research, B. 40: 709-713. DOI: 10.1016/0168-583X(89)90460-6  0.64
1987 Chopra DR, Chourasia AR, Dillingham TR, Peterson KL, Gnade B. Study of the Ti/Si interface using x-ray photoelectron and Auger electron appearance potential spectroscopies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1984-1987. DOI: 10.1116/1.574899  0.64
1987 Dillingham TR, Chourasia AR, Chopra DR, Martin SR, Peterson KL, Gnade B, Hu CZ. X-ray photoelectron spectroscopy study of the ni/si oxide/si interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3340-3345. DOI: 10.1116/1.574193  0.64
1986 Strong RL, Anthony JM, Gnade BE, Keenan JA, Norbeck E, Li LW, Helms CR. Composition and growth mechanism of anodic oxide on hg(1_x)cdxte Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1992-1996. DOI: 10.1116/1.574014  0.64
1985 Keenan JA, Gnade BE, White JB. Instrumental Neutron Activation Analysis of Processed Silicon Journal of the Electrochemical Society. 132: 2232-2236. DOI: 10.1149/1.2114326  0.64
1985 Schaake HF, Tregilgas JH, Beck JD, Kinch MA, Gnade BE. The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg, Cd)Te Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 143-149. DOI: 10.1116/1.573186  0.64
1984 Tregilgas JH, Gnade BE. Surface segregation of Ag in CdTe induced by photon absorption Journal of Applied Physics. 55: 588. DOI: 10.1063/1.333068  0.64
1983 Braga RA, Gnade BE, Fink RW, Carter HK. Half-life of the h 9 2 shell-model intruder-state isomer 187mAu Nuclear Physics, Section A. 410: 441-444. DOI: 10.1016/0375-9474(83)90636-X  0.64
1983 Gnade BE, Fink RW, Wood JL. Decay of mass-separated 187Au (8.4 min) to 187Pt Nuclear Physics, Section A. 406: 29-54. DOI: 10.1016/0375-9474(83)90283-X  0.64
1981 Gnade BE, Schwaiger GP, Liotta CL, Fink RW. Preparation of reactor-produced carrier-free 18F-fluoride as the potassium 18-crown-6 complex for synthesis of labelled organic compounds The International Journal of Applied Radiation and Isotopes. 32: 91-95. DOI: 10.1016/0020-708X(81)90139-3  0.64
1980 Gnade BE, Braga RA, Fink RW. L2,3-subshell x-ray fluorescence and Coster-Kronig yields at Z=64 and 67 Physical Review C. 21: 2025-2032. DOI: 10.1103/PhysRevC.21.2025  0.64
1979 Gnade BE, Braga RA, Western WR, Wood JL, Fink RW. Determination of corrections for tailing in low energy coincidence intensity measurements Nuclear Instruments and Methods. 164: 163-167. DOI: 10.1016/0029-554X(79)90446-4  0.64
Show low-probability matches.