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Gregg H. Jessen, Ph.D. - Publications

Affiliations: 
2002 Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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42 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Green AJ, Gillespie JK, Fitch RC, Walker DE, Lindquist M, Crespo A, Brooks D, Beam E, Xie A, Kumar V, Jimenez J, Lee C, Cao Y, Chabak KD, Jessen GH. ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance Ieee Electron Device Letters. 40: 1056-1059. DOI: 10.1109/Led.2019.2915555  0.439
2018 Chabak KD, McCandless JP, Moser NA, Green AJ, Mahalingam K, Crespo A, Hendricks N, Howe BM, Tetlak SE, Leedy K, Fitch RC, Wakimoto D, Sasaki K, Kuramata A, Jessen GH. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs Ieee Electron Device Letters. 39: 67-70. DOI: 10.1109/Led.2017.2779867  0.33
2018 Leedy KD, Chabak KD, Vasilyev V, Look DC, Mahalingam K, Brown JL, Green AJ, Bowers CT, Crespo A, Thomson DB, Jessen GH. Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition Apl Materials. 6: 101102. DOI: 10.1063/1.5047214  0.366
2018 Neal AT, Mou S, Rafique S, Zhao H, Ahmadi E, Speck JS, Stevens KT, Blevins JD, Thomson DB, Moser N, Chabak KD, Jessen GH. Donors and deep acceptors in β-Ga2O3 Applied Physics Letters. 113: 062101. DOI: 10.1063/1.5034474  0.376
2018 Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704  0.376
2017 Neal AT, Mou S, Lopez R, Li JV, Thomson DB, Chabak KD, Jessen GH. Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices. Scientific Reports. 7: 13218. PMID 29038456 DOI: 10.1038/S41598-017-13656-X  0.417
2017 Schuette ML, Green AJ, Leedy KD, McCandless JP, Jessen GH. Heterogeneous integration of low-temperature metal-oxide TFTs Proceedings of Spie. 10105: 1010512. DOI: 10.1117/12.2256188  0.404
2017 Moser N, McCandless J, Crespo A, Leedy K, Green A, Neal A, Mou S, Ahmadi E, Speck J, Chabak K, Peixoto N, Jessen G. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Ieee Electron Device Letters. 38: 775-778. DOI: 10.1109/Led.2017.2697359  0.381
2017 Leedy KD, Chabak KD, Vasilyev V, Look DC, Boeckl JJ, Brown JL, Tetlak SE, Green AJ, Moser NA, Crespo A, Thomson DB, Fitch RC, McCandless JP, Jessen GH. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Applied Physics Letters. 111: 012103. DOI: 10.1063/1.4991363  0.335
2017 Moser NA, McCandless JP, Crespo A, Leedy KD, Green AJ, Heller ER, Chabak KD, Peixoto N, Jessen GH. High pulsed current densityβ-Ga2O3MOSFETs verified by an analytical model corrected for interface charge Applied Physics Letters. 110: 143505. DOI: 10.1063/1.4979789  0.363
2016 Schuette ML, Green AJ, Leedy K, Crespo A, Tetlak SE, Sutherlin KA, Jessen GH. Ionic Metal-Oxide TFTs for Integrated Switching Applications Ieee Transactions On Electron Devices. 63: 1921-1927. DOI: 10.1109/Ted.2016.2544200  0.357
2016 Green AJ, Chabak KD, Heller ER, Fitch RC, Baldini M, Fiedler A, Irmscher K, Wagner G, Galazka Z, Tetlak SE, Crespo A, Leedy K, Jessen GH. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs Ieee Electron Device Letters. 37: 902-905. DOI: 10.1109/Led.2016.2568139  0.421
2016 Chabak KD, Moser N, Green AJ, Walker DE, Tetlak SE, Heller E, Crespo A, Fitch R, McCandless JP, Leedy K, Baldini M, Wagner G, Galazka Z, Li X, Jessen G. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage Applied Physics Letters. 109: 213501. DOI: 10.1063/1.4967931  0.364
2015 Ramirez JI, Li YV, Basantani H, Leedy K, Bayraktaroglu B, Jessen GH, Jackson TN. Radiation-hard ZnO thin film transistors Ieee Transactions On Nuclear Science. 62: 1399-1404. DOI: 10.1109/Tns.2015.2417831  0.31
2015 Fitch RC, Walker DE, Green AJ, Tetlak SE, Gillespie JK, Gilbert RD, Sutherlin KA, Gouty WD, Theimer JP, Via GD, Chabak KD, Jessen GH. Implementation of High-Power-Density X-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process Ieee Electron Device Letters. 36: 1004-1007. DOI: 10.1109/Led.2015.2474265  0.385
2014 Via GD, Felbinger JG, Blevins J, Chabak K, Jessen G, Gillespie J, Fitch R, Crespo A, Sutherlin K, Poling B, Tetlak S, Gilbert R, Cooper T, Baranyai R, Pomeroy JW, et al. Wafer-scale GaN HEMT performance enhancement by diamond substrate integration Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 871-874. DOI: 10.1002/Pssc.201300504  0.392
2011 Trejo M, Jessen GH, Chabak KD, Gillespie JK, Crespo A, Kossler M, Trimble V, Langley D, Heller ER, Claflin B, Walker DE, Poling B, Gilbert R, Via GD, Hoelscher J, et al. Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management Physica Status Solidi (a) Applications and Materials Science. 208: 439-444. DOI: 10.1002/Pssa.201000601  0.42
2010 Chabak KD, Trejo M, Crespo A, Walker DE, Yang J, Gaska R, Kossler M, Gillespie JK, Jessen GH, Trimble V, Via GD. Strained AlInN/GaN HEMTs on SiC with 2.1-A/mm output current and 104-GHz cutoff frequency Ieee Electron Device Letters. 31: 561-563. DOI: 10.1109/Led.2010.2045099  0.381
2010 Chabak KD, Gillespie JK, Miller V, Crespo A, Roussos J, Trejo M, Walker DE, Via GD, Jessen GH, Wasserbauer J, Faili F, Babić DI, Francis D, Ejeckam F. Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates Ieee Electron Device Letters. 31: 99-101. DOI: 10.1109/Led.2009.2036574  0.431
2010 Crespo A, Bellot MM, Chabak KD, Gillespie JK, Jessen GH, Miller V, Trejo M, Via GD, Walker DE, Winningham BW, Smith HE, Cooper TA, Gao X, Guo S. High-power ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier Ieee Electron Device Letters. 31: 2-4. DOI: 10.1109/Led.2009.2034875  0.4
2010 Trejo M, Chabak KD, Poling B, Gilbert R, Crespo A, Gillespie JK, Kossler M, Walker DE, Via GD, Jessen GH, Francis D, Faili F, Babić D, Ejeckam F. Comparative study of AlGaN/GaN HEMTs on free-standing diamond and silicon substrates for thermal effects Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619630  0.313
2010 Crespo A, Bellott M, Chabak K, Gillespie JK, Jessen GH, Kossler M, Trimble V, Trejo M, Via GD, Winningham B, Smith HE, Walker D, Cooper T, Gao X, Guo S. High frequency performance of Ga free barrier AlInN/GaN HEMT Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2433-2435. DOI: 10.1002/Pssc.200983886  0.399
2007 Jessen GH, Fitch RC, Gillespie JK, Via G, Crespo A, Langley D, Denninghoff DJ, Trejo M, Heller ER. Short-channel effect limitations on high-frequency operation of AlGaN/ GaN HEMTs for T-gate devices Ieee Transactions On Electron Devices. 54: 2589-2597. DOI: 10.1109/Ted.2007.904476  0.394
2007 Jessen GH, Gillespie JK, Via GD, Crespo A, Langley D, Aumer ME, Ward CS, Henry HG, Thomson DB, Partlow DP. RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz Ieee Electron Device Letters. 28: 354-356. DOI: 10.1109/Led.2007.895417  0.36
2007 Brillson LJ, Mosbacker HL, Hetzer MJ, Strzhemechny Y, Jessen GH, Look DC, Cantwell G, Zhang J, Song JJ. Dominant effect of near-interface native point defects on ZnO Schottky barriers Applied Physics Letters. 90. DOI: 10.1063/1.2711536  0.736
2006 Walker DE, Fitch RC, Gillespie JK, Jessen GH, Cassity PD, Breedlove JR, Brillson LJ. Controlled gate surface processing of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 89. DOI: 10.1063/1.2378559  0.647
2005 Gillespie J, Crespo A, Fitch R, Jessen G, Via G. AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers Solid-State Electronics. 49: 670-672. DOI: 10.1016/J.Sse.2004.12.011  0.357
2005 Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Baik KH, Gila BP, Abernathy CR, et al. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Physica Status Solidi C: Conferences. 2: 2672-2675. DOI: 10.1002/Pssc.200461268  0.419
2004 Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ. Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Journal of the Electrochemical Society. 151: G915-G918. DOI: 10.1149/1.1803561  0.435
2004 Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ. Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2284-2289. DOI: 10.1116/1.1795820  0.749
2003 Jessen GH, Fitch RC, Gillespie JK, Via GD, Moser NA, Yannuzzi MJ, Crespo A, Sewell JS, Dettmer RW, Jenkins TJ, Davis RF, Yang J, Khan MA, Binari SC. High Performance 0.14 μm Gate-Length AlGaN/GaN Power HEMTs on SiC Ieee Electron Device Letters. 24: 677-679. DOI: 10.1109/Led.2003.818816  0.365
2003 Jessen GH, Fitch RC, Gillespie JK, Via GD, White BD, Bradley ST, Walker DE, Brillson LJ. Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 485-487. DOI: 10.1063/1.1593829  0.753
2003 Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, et al. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Solid-State Electronics. 47: 1781-1786. DOI: 10.1016/S0038-1101(03)00138-2  0.413
2002 Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P. Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 554-560. DOI: 10.1116/1.1451303  0.756
2002 Brillson LJ, Tumakha S, Jessen GH, Okojie RS, Zhang M, Pirouz P. Thermal and doping dependence of 4H-SiC polytype transformation Applied Physics Letters. 81: 2785-2787. DOI: 10.1063/1.1512816  0.759
2002 Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS. Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Solid-State Electronics. 46: 1427-1431. DOI: 10.1016/S0038-1101(02)00075-8  0.752
2001 Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation Applied Physics Letters. 79: 3056-3058. DOI: 10.1063/1.1415347  0.748
2001 Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF. Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science. 175: 442-449. DOI: 10.1016/S0169-4332(01)00098-8  0.757
1999 Levin TM, Jessen GH, Ponce FA, Brillson LJ. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 2545-2552. DOI: 10.1116/1.591125  0.571
1999 Brillson LJ, Levin TM, Jessen GH, Ponce FA. Localized states at InGaN/GaN quantum well interfaces Applied Physics Letters. 75: 3835-3837. DOI: 10.1063/1.125472  0.555
1999 Brillson LJ, Levin TM, Jessen GH, Young AP, Tu C, Naoi Y, Ponce FA, Yang Y, Lapeyre GJ, MacKenzie JD, Abernathy CR. Defect formation near GaN surfaces and interfaces Physica B: Condensed Matter. 273: 70-74. DOI: 10.1016/S0921-4526(99)00409-3  0.595
1998 Young AP, Schäfer J, Jessen GH, Bandhu R, Brillson LJ, Lucovsky G, Niimi H. Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2177-2181.  0.551
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