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Carey M. Tanner, Ph.D. - Publications

Affiliations: 
2007 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering, Materials Science Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94. PMID 17604405 DOI: 10.1021/Nl071046U  0.486
2007 Tanner CM, Toney MF, Lu J, Blom HO, Sawkar-Mathur M, Tafesse MA, Chang JP. Engineering epitaxial γ -Al2 O3 gate dielectric films on 4H-SiC Journal of Applied Physics. 102. DOI: 10.1063/1.2812609  0.583
2007 Tanner CM, Perng YC, Frewin C, Saddow SE, Chang JP. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2805742  0.659
2007 Tanner CM, Sawkar-Mathur M, Lu J, Blom HO, Toney MF, Chang JP. Structural properties of epitaxial γ- Al2O3 (111) thin films on 4H-SiC (0001) Applied Physics Letters. 90. DOI: 10.1063/1.2435978  0.614
2007 Tanner CM, Choi J, Chang JP. Electronic structure and band alignment at the Hf O2 4H-SiC interface Journal of Applied Physics. 101. DOI: 10.1063/1.2432402  0.631
2006 Tanner CM, Lu J, Blom HO, Chang JP. Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001) Materials Science Forum. 1075-1078. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1075  0.596
2006 Tanner CM, Choi J, Chang JP. Experimental and first-principles studies of the band alignment at the HfO2/4H-SiC (0001) interface Materials Science Forum. 527: 1071-1074. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1071  0.658
2006 Tanner CM, Lu J, Blom H, Chang JP. Growth of Epitaxial γ-Al2O3 Dielectrics on 4H-SiC Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B10-06  0.621
2006 Tanner CM, Lu J, Blom HO, Chang JP. Growth of epitaxial γ-Al 2O 3 dielectrics on 4H-SiC Materials Research Society Symposium Proceedings. 911: 341-345.  0.446
2006 Tanner CM, Lu J, Blom HO, Chang JP. Structural and morphological properties of ultrathin HfO2 dielectrics on 4H-SiC (0001) Materials Science Forum. 527: 1075-1078.  0.418
2005 Tanner CM, Choi J, Chang JP. Material and electrical properties of ultrathin HfO 2 films on 4H-SiC (0001) Ecs Transactions. 1: 149-151.  0.504
2005 Choi J, Puthenkovilakam R, Tanner CM, Chang JP. Determination of band offsets at the AlN/SiC interface Ecs Transactions. 1: 220-227.  0.62
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