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Leslie G. Vaughn, Ph.D. - Publications

Affiliations: 
2006 University of New Mexico, Albuquerque, NM, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Vaughn LG, Dawson LR, Pease EA, Lester LF, Xu H, Jiang Y, Gray AL. Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells Proceedings of Spie - the International Society For Optical Engineering. 5722: 307-318. DOI: 10.1117/12.606226  0.602
2003 Xin YC, Vaughn LG, Dawson LR, Stintz A, Lin Y, Lester LF, Huffaker DL. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135. DOI: 10.1063/1.1582229  0.504
2003 Pease EA, Dawson LR, Vaughn LG, Rotella P, Lester LF. 2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AllnSb metamorphic buffer layers Journal of Applied Physics. 93: 3177-3181. DOI: 10.1063/1.1544425  0.586
2002 Vaughn LG, Ralph L, Xu H, Jiang Y, Lester LF. Characterization of AlInAsSb and AlGaInAsSb MBE-grown Digital Alloys Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M7.2  0.479
2002 Vaughn LG, Dawson LR, Xu H, Jiang Y, Lester LF. Characterization of AlInAsSb and AlGaInAsSb MBE-grown digital alloys Materials Research Society Symposium - Proceedings. 744: 397-408.  0.415
1999 Vaughn LG, Newell TC, Lester LF, Macinnes AN. Characterization of GaS-Passivated Quantum-Well Laser Diodes Mrs Proceedings. 573: 125. DOI: 10.1557/Proc-573-125  0.563
1999 Vaughn LG, Newell TC, Lester LF, Macinnes AN. Characterization of GaS-passivated quantum-well laser diodes Materials Research Society Symposium - Proceedings. 573: 125-130.  0.588
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