| Year |
Citation |
Score |
| 2018 |
Estrada D, Shimizu K, Bohmer M, Gangwal S, Diederich T, Grabowski S, Tashjian G, Chamberlin D, Shchekin OB, Bhardwaj J. 32-1: On-chip Red Quantum Dots in White LEDs for General Illumination Sid Symposium Digest of Technical Papers. 49: 405-408. DOI: 10.1002/sdtp.12585 |
0.448 |
|
| 2017 |
Shimizu KT, Böhmer M, Estrada D, Gangwal S, Grabowski S, Bechtel H, Kang E, Vampola KJ, Chamberlin D, Shchekin OB, Bhardwaj J. Toward commercial realization of quantum dot based white light-emitting diodes for general illumination Photonics Research. 5: A1. DOI: 10.1364/PRJ.5.0000A1 |
0.427 |
|
| 2009 |
Davis L, Coe-Sullivan S, Shchekin O, Mishra K, Raukas M, Modi R, Breen C, Leibowitz M. Standards Development for the Characterization of Quantum Dot Suspensions and Solids Mrs Proceedings. 1207. DOI: 10.1557/PROC-1207-N04-09 |
0.376 |
|
| 2007 |
Robb JL, Chen Y, Timmons A, Hall KC, Shchekin OB, Deppe DG. Time-resolved Faraday rotation measurements of spin relaxation in InGaAs/GaAs quantum dots: Role of excess energy Applied Physics Letters. 90. DOI: 10.1063/1.2721380 |
0.61 |
|
| 2007 |
Hall KC, Koerperick EJ, Boggess TF, Shchekin OB, Deppe DG. Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Applied Physics Letters. 90. DOI: 10.1063/1.2437063 |
0.597 |
|
| 2006 |
Hendrickson J, Richards BC, Sweet J, Christenson C, Pajor M, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic crystal nanocavities: Transition from weak to strong coupling and nonlinear emissions Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4629159 |
0.655 |
|
| 2005 |
Hendrickson JR, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a Photonic Crystal Slab Nanocavity by Condensation of Xenon for Cavity QED Experiments Frontiers in Optics. DOI: 10.1364/Fio.2005.Pdp_A2 |
0.629 |
|
| 2005 |
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1737-1739. DOI: 10.1116/1.2091119 |
0.727 |
|
| 2005 |
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Inert gas maintenance for molecular-beam epitaxy systems Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1257-1261. DOI: 10.1116/1.1878993 |
0.729 |
|
| 2005 |
Gibbs H, Khitrova G, Hendrickson J, Yoshie T, Scherer A, Shchekin O, Deppe D. Vacuum Rabi splitting using a single quantum dot in a photonic crystal slab nanocavity Iqec, International Quantum Electronics Conference Proceedings. 2005: 1727-1728. DOI: 10.1109/IQEC.2005.1561157 |
0.61 |
|
| 2005 |
Hendrickson J, Richards BC, Sweet J, Mosor S, Christenson C, Lam D, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic-crystal-slab nanocavities: Quality factors and lasing Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.193303 |
0.71 |
|
| 2005 |
Mosor S, Hendrickson J, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076435 |
0.652 |
|
| 2005 |
Gündoǧdu K, Hall KC, Koerperick EJ, Pryor CE, Flatté ME, Boggess TF, Shchekin OB, Deppe DG. Electron and hole spin dynamics in semiconductor quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857067 |
0.597 |
|
| 2005 |
Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55. |
0.644 |
|
| 2005 |
Hendrickson J, Gibbs M, Khitrova G, Rupper G, Ell C, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong coupling between a single quantum dot and a photonic crystal slab nanocavity Optics Infobase Conference Papers. |
0.62 |
|
| 2005 |
Hendrickson J, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon for cavity QED experiments Optics Infobase Conference Papers. |
0.473 |
|
| 2005 |
Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55. |
0.644 |
|
| 2004 |
Yoshie T, Scherer A, Hendrickson J, Khitrova G, Gibbs HM, Rupper G, Ell C, Shchekin OB, Deppe DG. Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity. Nature. 432: 200-3. PMID 15538363 DOI: 10.1038/Nature03119 |
0.694 |
|
| 2004 |
Hall KC, Gündoǧdu K, Boggess TF, Shchekin OB, Deppe DG. Carrier and spin dynamics in charged quantum dots Proceedings of Spie - the International Society For Optical Engineering. 5361: 76-87. DOI: 10.1117/12.531620 |
0.606 |
|
| 2004 |
Yoshie T, Lončar M, Okamoto K, Qiu Y, Shchekin OB, Chen H, Deppe DG, Scherer A. Photonic crystal nanocavities with quantum well or quantum dot active material Proceedings of Spie - the International Society For Optical Engineering. 5360: 16-23. DOI: 10.1117/12.525869 |
0.646 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Ultrafast electron capture into p-modulation-doped quantum dots Applied Physics Letters. 85: 4570-4572. DOI: 10.1063/1.1815371 |
0.71 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Efficient electron spin detection with positively charged quantum dots Applied Physics Letters. 84: 2793-2795. DOI: 10.1063/1.1695637 |
0.651 |
|
| 2004 |
Yoshie T, Shchekin OB, Chen H, Deppe DG, Schere A. Planar Photonic Crystal Nanolasers (II): Low-threshold Quantum Dot Lasers Ieice Transactions On Electronics. 300-307. |
0.68 |
|
| 2004 |
Yoshie T, Scherer A, Shchekin OB, Chen H, Deppe DG. High spontaneous emission coupling factor in photonic crystal nanolasers Osa Trends in Optics and Photonics Series. 97: 919. |
0.597 |
|
| 2003 |
Deppe DG, Shchekin OB, Huang H. High to quantum dot lasers based on charge-controlled active regions Frontiers in Optics. DOI: 10.1364/Fio.2003.Thm1 |
0.715 |
|
| 2003 |
Deppe DG, Shchekin OB, Mo Q, Chen H, Huang Z. Novel semiconductor lasers based on quantum dots 2003 Ieee/Leos International Conference On Optical Mems. 167-168. DOI: 10.1109/OMEMS.2003.1233518 |
0.691 |
|
| 2003 |
Yang T, Shchekin O, O'Brien JD, Deppe DG. Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions Electronics Letters. 39: 1657-1658. DOI: 10.1049/el:20031058 |
0.665 |
|
| 2003 |
Mo Q, Chen H, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror Electronics Letters. 39: 525-526. DOI: 10.1049/El:20030309 |
0.726 |
|
| 2003 |
Shchekin OB, Huang H, Deppe DG. 1.3-micron high to quantum dot lasers based on charge-controlled active regions Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 80-84. |
0.696 |
|
| 2003 |
Deppe DG, Shchekin OB, Ahn J, Cao C, Gundogdu K, Hall K, Zhang L, Boggess T. Modulation characteristics of P-doped quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 116-117. |
0.679 |
|
| 2003 |
Chen H, Mo Q, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature CW operation of 980nm air-gap VCSELs Osa Trends in Optics and Photonics Series. 88: 1142-1144. |
0.551 |
|
| 2002 |
Shchekin OB, Deppe DG. Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region Ieee Photonics Technology Letters. 14: 1231-1233. DOI: 10.1109/LPT.2002.801597 |
0.669 |
|
| 2002 |
Deppe DG, Huang H, Shchekin OB. Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed Ieee Journal of Quantum Electronics. 38: 1587-1593. DOI: 10.1109/Jqe.2002.805246 |
0.702 |
|
| 2002 |
Deppe DG, Shchekin OB. Quantum dot lasers: Temperature insensitive operation and the prospect for high speed modulation Device Research Conference - Conference Digest, Drc. 2002: 135-136. DOI: 10.1109/DRC.2002.1029553 |
0.691 |
|
| 2002 |
Shchekin OB, Deppe DG. 1.3 μm InAs quantum dot laser with T o=161K from 0 to 80°C Applied Physics Letters. 80: 3277-3279. DOI: 10.1063/1.1476708 |
0.683 |
|
| 2002 |
Shchekin OB, Deppe DG. The role of p-type doping and the density of states on the modulation response of quantum dot lasers Applied Physics Letters. 80: 2758-2760. DOI: 10.1063/1.1469212 |
0.668 |
|
| 2002 |
Yoshie T, Shchekin OB, Chen H, Deppe DG, Scherer A. Quantum dot photonic crystal lasers Electronics Letters. 38: 967-968. DOI: 10.1049/El:20020650 |
0.673 |
|
| 2002 |
Shchekin OB, Ahn J, Deppe DG. High temperature performance of self-organised quantum dot laser with stacked p-doped active region Electronics Letters. 38: 712-713. DOI: 10.1049/el:20020509 |
0.714 |
|
| 2001 |
Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Cao C, Shchekin OB. Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots Applied Physics Letters. 79: 3320-3322. DOI: 10.1063/1.1418035 |
0.585 |
|
| 2001 |
Shchekin OB, Deppe DG, Lu D. Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots Applied Physics Letters. 78: 3115-3117. DOI: 10.1063/1.1372362 |
0.727 |
|
| 2001 |
Deppe DG, Chen H, Zou Z, Shchekin OB, Cao C, Boggess T, Zhang L. Long-wavelength quantum dots: Carrier dynamics and applications to lasers and light emitting diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 265-266. |
0.655 |
|
| 2001 |
Deppe DG, Cao C, Shchekin OB, Zou Z, Chen H, Boggess TF, Zhang L, Gundogdu K. Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 79-82. |
0.669 |
|
| 2001 |
Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Ultrafast carrier dynamics in size-controlled, self-assembled, InGaAs/GaAs quantum dots Conference On Lasers and Electro-Optics Europe - Technical Digest. 357-358. |
0.599 |
|
| 2000 |
Deppe DG, Park G, Shchekin OB. Temperature dependence of quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 4078: 90-99. DOI: 10.1117/12.392129 |
0.797 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Mo Q, Deppe DG. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122. DOI: 10.1109/68.874208 |
0.834 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232. DOI: 10.1109/68.826897 |
0.804 |
|
| 2000 |
Park G, Shchekin OB, Deppe DG. Temperature dependence of gain saturation in multilevel quantum dot lasers Ieee Journal of Quantum Electronics. 36: 1065-1071. DOI: 10.1109/3.863959 |
0.777 |
|
| 2000 |
Huffaker DL, Park G, Zhengzhong Z, Shchekin OB, Deppe DG. Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 452-461. DOI: 10.1109/2944.865100 |
0.769 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. DOI: 10.1063/1.127012 |
0.808 |
|
| 2000 |
Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. DOI: 10.1063/1.125991 |
0.757 |
|
| 2000 |
Chen H, Zou Z, Shchekin OB, Deppe DG. InAs quantum-dot lasers operating near 1.3 μm with high characteristic temperature for continuous-wave operation Electronics Letters. 36: 1703-1704. DOI: 10.1049/El:20001224 |
0.741 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature Electronics Letters. 36: 1283-1284. DOI: 10.1049/El:20000909 |
0.781 |
|
| 2000 |
Boggess TF, Zhang L, Flatte ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 366-367. |
0.649 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Very low threshold oxide-confined 1.3 μm GaAs-based quantum dot laser Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 349-350. |
0.675 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. |
0.692 |
|
| 2000 |
Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. |
0.662 |
|
| 1999 |
Park G, Huffaker DL, Zou Z, Shchekin OB, Deppe DG. Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303. DOI: 10.1109/68.748215 |
0.816 |
|
| 1999 |
Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226 |
0.818 |
|
| 1999 |
Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. DOI: 10.1063/1.125320 |
0.804 |
|
| 1999 |
Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. DOI: 10.1007/S11664-999-0107-X |
0.79 |
|
| 1999 |
Zou Z, Huffaker DL, Csutak S, Shchekin OB, Graham LA, Deppe DG. Ground state lasing at 1.07 μm from InGaAs/GaAs QD VCSEL Leos Summer Topical Meeting. 81-82. |
0.682 |
|
| 1999 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. 1.3 μm quantum dot lasers with single and stacked active layers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 465-466. |
0.706 |
|
| 1999 |
Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. Quantum dot active regions for extended wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 3899: 134-146. |
0.722 |
|
| 1999 |
Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 μm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. |
0.659 |
|
| 1999 |
Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. |
0.683 |
|
| 1998 |
Zou Z, Shchekin OB, Park G, Huffaker DL, Deppe DG. Threshold temperature dependence of lateral-cavity quantum-dot lasers Ieee Photonics Technology Letters. 10: 1673-1675. DOI: 10.1109/68.730465 |
0.819 |
|
| 1998 |
Oh TH, Shchekin OB, Deppe DG. Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture Ieee Photonics Technology Letters. 10: 1064-1066. DOI: 10.1109/68.701503 |
0.565 |
|
| 1998 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766 |
0.808 |
|
| 1998 |
Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. 73: 2564-2566. DOI: 10.1063/1.122534 |
0.809 |
|
| 1998 |
Huffaker DL, Park G, Shchekin O, Zhou ZZ, Deppe DG. InGaAs/GaAs quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 109-110. |
0.698 |
|
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