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Sagnik Dey, Ph.D. - Publications

Affiliations: 
2006 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Dey S, Lee S, Joshi SV, Majhi P, Banerjee SK. Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G05-16  0.637
2007 Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119  0.666
2007 Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445  0.607
2007 Joshi S, Dey S, Chaumont M, Campion A, Banerjee SK. Ultra-Thin Si1−x Ge x Dislocation Blocking Layers for Ge/Strained Si CMOS Devices Journal of Electronic Materials. 36: 641-647. DOI: 10.1007/S11664-007-0137-1  0.62
2006 Liu Y, Dey S, Tang S, Kelly DQ, Sarkar J, Banerjee SK. Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Ieee Transactions On Electron Devices. 53: 2598-2602. DOI: 10.1109/Ted.2006.882395  0.569
2006 Kelly DQ, Donnelly JP, Dey S, Joshi SV, Gutierrez DIG, Yacaman MJ, Banerjee SK. BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates Ieee Electron Device Letters. 27: 265-268. DOI: 10.1109/Led.2006.870866  0.615
2006 Kelly DQ, Wiedmann I, Donnelly JP, Joshi SV, Dey S, Banerjee SK, Garcia-Gutierrez DI, José-Yacamán M. Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications Applied Physics Letters. 88: 152101. DOI: 10.1063/1.2195008  0.648
2006 Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK. A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900. DOI: 10.1016/J.Sse.2006.04.003  0.664
2006 Dey S, Joshi S, Garcia-Gutierrez D, Chaumont M, Campion A, Jose-Yacaman M, Banerjee SK. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors Journal of Electronic Materials. 35: 1607-1612. DOI: 10.1007/S11664-006-0205-Y  0.596
2005 Dey S, Joshi S, Banerjee SK. Current-crowding effect in multiple cantilever channel MOSFET Solid-State Electronics. 49: 1248-1250. DOI: 10.1016/J.Sse.2005.04.011  0.556
2005 Kelly DQ, Dey S, Onsongo D, Banerjee SK. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs Microelectronics Reliability. 45: 1033-1040. DOI: 10.1016/J.Microrel.2005.01.011  0.521
2004 Onsongo D, Kelly DQ, Dey S, Wise RL, Cleavelin CR, Banerjee SK. Improved hot-electron reliability in strained-Si nMOS Ieee Transactions On Electron Devices. 51: 2193-2199. DOI: 10.1109/Ted.2004.839871  0.512
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