Davood Shahrjerdi, Ph.D. - Publications

Affiliations: 
2008 Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

88 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Alharbi A, Shahrjerdi D. A new approach for energy band engineering in flexible GaAs devices Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548451  0.72
2016 Shahrjerdi D, Bedell SW, Khakifirooz A, Cheng K. Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters Solid-State Electronics. 117: 117-122. DOI: 10.1016/J.Sse.2015.11.023  0.72
2016 Alharbi A, Shahrjerdi D. Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films Physica Status Solidi - Rapid Research Letters. 10: 627-633. DOI: 10.1002/Pssr.201600163  0.72
2015 Shahrjerdi D, Rajendran J, Garg S, Koushanfar F, Karri R. Shielding and securing integrated circuits with sensors Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 2015: 170-174. DOI: 10.1109/ICCAD.2014.7001348  0.72
2014 Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Bayram C, Hekmatshoar B, Li N, Ott J, Sadana D. Advanced flexible electronics: Challenges and opportunities Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2051716  0.72
2014 Hekmatshoar B, Shahrjerdi D, Hopstaken M. High-efficiency heterojunction solar cells on crystalline germanium substrates Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045632  0.72
2014 Hekmatshoar B, Shahrjerdi D, Sadana DK. Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 971-972. DOI: 10.1109/PVSC.2014.6925075  0.72
2013 Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. Acs Nano. 7: 8303-8. PMID 24006886 DOI: 10.1021/Nn403935V  0.72
2013 Shahrjerdi D, Bedell SW. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic. Nano Letters. 13: 315-20. PMID 23249265 DOI: 10.1021/Nl304310X  0.72
2013 Shahrjerdi D, Bedell SW, Bayram C, Sadana D. Flexible InGaP/(In)GaAs tandem solar cells with very high specific power Conference Record of the Ieee Photovoltaic Specialists Conference. 2805-2808. DOI: 10.1109/PVSC.2013.6745055  0.72
2013 Bedell SW, Fogel K, Lauro P, Shahrjerdi D, Ott JA, Sadana D. Layer transfer by controlled spalling Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/15/152002  0.72
2013 Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678  0.72
2013 Shahrjerdi D, Bedell SW, Bayram C, Lubguban CC, Fogel K, Lauro P, Ott JA, Hopstaken M, Gayness M, Sadana D. Ultralight high-efficiency flexible InGaP/(In)GaAs tandem solar cells on plastic Advanced Energy Materials. 3: 566-571. DOI: 10.1002/Aenm.201200827  0.72
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z  0.72
2012 Shahrjerdi D, Hekmatshoar B, Bedell SW, Ott JA, Hopstaken M, Sadana DK. Ultra low temperature epitaxial growth of strained Si directly on Si substrates Ecs Transactions. 45: 31-37. DOI: 10.1149/1.3700936  0.72
2012 Shahrjerdi D, Bedell SW, Hekmatshoar B, Bayram C, Sadana DK. New paradigms for cost-effective III-V photovoltaic technology Ecs Transactions. 50: 15-22. DOI: 10.1149/05040.0015ecst  0.72
2012 Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Hekmatshoar B, Li N, Ott JA, Sadana DK. Cost-effective layer transfer by controlled spalling technology Ecs Transactions. 50: 315-323. DOI: 10.1149/05007.0315ecst  0.72
2012 Khakifirooz A, Cheng K, Nagumo T, Loubet N, Adam T, Reznicek A, Kuss J, Shahrjerdi D, Sreenivasan R, Ponoth S, He H, Kulkarni P, Liu Q, Hashemi P, Khare P, et al. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS Digest of Technical Papers - Symposium On Vlsi Technology. 117-118. DOI: 10.1109/VLSIT.2012.6242489  0.72
2012 Hekmatshoar B, Shahrjerdi D, Bedell SW, Sadana DK. High-efficiency heterojunction solar cells on crystalline silicon and germanium substrates enabled by low-temperature epitaxial growth of silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 1590-1593. DOI: 10.1109/PVSC.2012.6317898  0.72
2012 Ebert C, Pulwin Z, Reynolds CL, Shahrjerdi D, Rawdanowicz TA, Dyer D, Lu F. Optimization of MOCVD grown MQW structures for triple junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1465-1470. DOI: 10.1109/PVSC.2012.6317873  0.72
2012 Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Ott JA, Gokmen T, Sadana DK. High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology Conference Record of the Ieee Photovoltaic Specialists Conference. 974-977. DOI: 10.1109/PVSC.2012.6317765  0.72
2012 Bedell SW, Shahrjerdi D, Hekmatshoar B, Fogel K, Lauro PA, Ott JA, Sosa N, Sadana D. Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies Ieee Journal of Photovoltaics. 2: 141-147. DOI: 10.1109/JPHOTOV.2012.2184267  0.72
2012 Shahrjerdi D, Bedell SW, Khakifirooz A, Fogel K, Lauro P, Cheng K, Ott JA, Gaynes M, Sadana DK. Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2012.6478981  0.72
2012 Khakifirooz A, Cheng K, Liu Q, Nagumo T, Loubet N, Reznicek A, Kuss J, Gimbert J, Sreenivasan R, Vinet M, Grenouillet L, Le Tiec Y, Wacquez R, Ren Z, Cai J, ... Shahrjerdi D, et al. Extremely thin SOI for system-on-chip applications Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330618  0.72
2012 Hekmatshoar B, Shahrjerdi D, Hopstaken M, Ott JA, Sadana DK. Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4751339  0.72
2012 Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Gokmen T, Ott JA, Sadana DK. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Applied Physics Letters. 100. DOI: 10.1063/1.3681397  0.72
2012 Shahrjerdi D, Hekmatshoar B, Bedell SW, Hopstaken M, Sadana DK. Low-temperature epitaxy of compressively strained silicon directly on silicon substrates Journal of Electronic Materials. 41: 494-497. DOI: 10.1007/S11664-011-1807-6  0.72
2011 Singh RR, Manickam A, Ayazian S, Hassibi A, Shahrjerdi D. VLSI-enabled DNA sequencing arrays Midwest Symposium On Circuits and Systems. DOI: 10.1109/MWSCAS.2011.6026444  0.72
2011 Shahrjerdi D, Hekmatshoar B, Sadana DK. Low-temperature a-Si:H/GaAs Hheterojunction solar cells Ieee Journal of Photovoltaics. 1: 104-107. DOI: 10.1109/Jphotov.2011.2164391  0.72
2011 Hekmatshoar B, Shahrjerdi D, Hopstaken M, Sadana D. Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devices Ieee International Reliability Physics Symposium Proceedings. 5E.5.1-5E.5.4. DOI: 10.1109/IRPS.2011.5784536  0.72
2011 Hekmatshoar B, Shahrjerdi D, Sadana DK. Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates Technical Digest - International Electron Devices Meeting, Iedm. 36.6.1-36.6.4. DOI: 10.1109/IEDM.2011.6131687  0.72
2011 Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications Technical Digest - International Electron Devices Meeting, Iedm. 23.3.1-23.3.4. DOI: 10.1109/IEDM.2011.6131596  0.72
2010 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406  0.72
2010 Khakifirooz A, Cheng K, Jagannathan B, Kulkarni P, Sleight JW, Shahrjerdi D, Chang JB, Lee S, Li J, Bu H, Gauthier R, Doris B, Shahidi G. Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 152-153. DOI: 10.1109/ISSCC.2010.5434014  0.72
2010 Shahrjerdi D, Nah J, Hekmatshoar B, Akyol T, Ramon M, Tutuc E, Banerjee SK. Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric Applied Physics Letters. 97. DOI: 10.1063/1.3521284  0.72
2009 Banerjee S, Tutuc E, Kim S, Akyol T, Jamil M, Shahrjerdi D, Donnelly J, Colombo L. High-k dielectrics for Ge, III-V and graphene MOSFETs Ecs Transactions. 25: 285-299. DOI: 10.1149/1.3206627  0.72
2009 Garcia-Gutierrez DI, Shahrjerdi D, Kaushik V, Banerjee SK. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2390-2395. DOI: 10.1116/1.3256229  0.72
2009 Cheng K, Khakifirooz A, Kulkarni P, Ponoth S, Kuss J, Shahrjerdi D, Edge LF, Kimball A, Kanakasabapathy S, Xiu K, Schmitz S, Reznicek A, Adam T, He H, Loubet N, et al. Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424422  0.72
2009 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain Device Research Conference - Conference Digest, Drc. 15-16. DOI: 10.1109/DRC.2009.5354970  0.72
2009 Shahrjerdi D, Nah J, Akyol T, Ramon M, Tutuc E, Banerjee SK. Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2009.5354894  0.72
2009 Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410  0.72
2009 Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021  0.72
2009 Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration Journal of Electronic Materials. 38: 438-442. DOI: 10.1007/S11664-008-0645-7  0.72
2008 Shahrjerdi D, Garcia-Gutierrez DI, Kim S, Hasan M, Varahramyan K, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode n-channel GaAs MOSFETs employing a wet clean process for GaAs substrates Ecs Transactions. 16: 59-67. DOI: 10.1149/1.2979981  0.72
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2938728  0.72
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  0.72
2008 Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889  0.72
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  0.72
2008 Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Donnelly JP, Tutuc E, Banerjee SK. Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2008.4800732  0.72
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2943186  0.72
2008 Shahrjerdi D, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937404  0.72
2008 Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim HS, Ok I, Yum JH, Park SI, Banerjee SK, Lee JC. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2937117  0.72
2008 Shahrjerdi D, Akyol T, Ramon M, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2931708  0.72
2008 Garcia-Gutierrez DI, Kaushik V, Shahrjerdi D, Banerjee SK. Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications Microscopy and Microanalysis. 14: 446-447. DOI: 10.1017/S1431927608083001  0.72
2008 Jamil M, Donnelly JP, Lee SH, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A comprehensive study of growth techniques and characterization of epitaxial Ge1-xCx (111) layers grown directly on Si (111) for MOS applications Materials Research Society Symposium Proceedings. 1068: 273-278.  0.72
2007 Banerjee SK, Tang S, Mao C, Sarkar J, Liu H, Shahrjerdi D, Lee CH, Trent JD. Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories The Japan Society of Applied Physics. 2007: 948-949. DOI: 10.7567/Ssdm.2007.D-8-1  0.72
2007 Donnelly JP, Shahrjerdi D, Kelly DQ, Tutuc E, Banerjee SK. Enhanced channel mobility materials for MOSFETs on Si substrates Ecs Transactions. 11: 47-60. DOI: 10.1149/1.2780764  0.72
2007 Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119  0.72
2007 Shahrjerdi D, Garcia-Gutierrez DI, Banerjee SK. Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach Ieee Electron Device Letters. 28: 793-796. DOI: 10.1109/Led.2007.902612  0.72
2007 Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445  0.72
2007 Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190  0.72
2007 Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438  0.72
2007 Sarkar J, Tang S, Shahrjerdi D, Banerjee SK. Vertical flash memory with protein-mediated assembly of nanocrystal floating gate Applied Physics Letters. 90. DOI: 10.1063/1.2711528  0.72
2007 Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024  0.72
2006 Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384  0.72
2006 Shahrjerdi D, Oye MM, Holmes AL, Banerjee SK. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization Applied Physics Letters. 89. DOI: 10.1063/1.2234837  0.72
2005 Abdi Y, Mohajerzadeh S, Hosseinzadegan H, Shahrjerdi D, Robertson M, Bennett JC. Application of carbon nanotubes in nano-lithography and nano-electronics Device Research Conference - Conference Digest, Drc. 2005: 115-116. DOI: 10.1109/DRC.2005.1553082  0.72
2005 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Afzali-Kusha A, Robertson MD, Tonita A. Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress Journal of Applied Physics. 97. DOI: 10.1063/1.1836012  0.72
2005 Shahrjerdi D, Hekmatshoar B, Khakifirooz A, Afzali-Kusha A. Optimization of the VT-control method for low-power ultra-thin double-gate SOI logic circuits Integration, the Vlsi Journal. 38: 505-513. DOI: 10.1016/j.vlsi.2004.07.004  0.72
2005 Donnelly JP, Kelly DQ, Joshi S, Dey S, Shahrjerdi D, Wiedeman I, Ahmad D, Banerjee SK. High mobility strained Ge MOSFETs with high-k gate dielectric on Si 2005 International Semiconductor Device Research Symposium. 2005: 150.  0.72
2004 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Asl Soliemani E. Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors Materials Research Society Symposium Proceedings. 814: 101-105. DOI: 10.1557/Proc-814-I6.2  0.72
2004 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Tonita A, Bennett JC. Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 856-858. DOI: 10.1116/1.1705581  0.72
2004 Makki BS, Moradi M, Moafi A, Mohajerzadeh S, Hekmatshoar B, Shahrjerdi D. Fabrication of poly-Ge-based thermopiles on plastic Ieee Sensors Journal. 4: 743-748. DOI: 10.1109/Jsen.2004.836862  0.72
2004 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/DRC.2004.1367796  0.72
2004 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium Applied Physics Letters. 85: 1054-1056. DOI: 10.1063/1.1779946  0.72
2004 Shahrjerdi D, Fathipour M, Hekmatshoar B, Khakifirooz A. A lateral structure for low-cost fabrication of COOLMOS™ Solid-State Electronics. 48: 1953-1957. DOI: 10.1016/J.Sse.2004.05.041  0.72
2004 Hekmatshoar B, Khajooeizadeh A, Mohajerzadeh S, Shahrjerdi D, Asl-Soleimani E. Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors Materials Science in Semiconductor Processing. 7: 419-422. DOI: 10.1016/J.Mssp.2004.09.019  0.72
2004 Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A, Robertson M. High Mobility Poly-Ge Thin-Film Transistors Fabricated on Flexible Plastic Substrates at Temperatures below 130°C Journal of Electronic Materials. 33: 353-357. DOI: 10.1007/S11664-004-0142-6  0.72
2004 Shahrjerdi D, Hekmatshoar B, Afzali-Kusha A, Khakifirooz A. Optimization of the V T-control method for low-power ultra-thin double-gate SOI logic circuits Proceedings of the Acm Great Lakes Symposium On Vlsi. 236-239.  0.72
2003 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Afzali-Kusha A. Stress-assisted copper-induced lateral growth of polycrystalline germanium Materials Research Society Symposium - Proceedings. 795: 199-204. DOI: 10.1557/Proc-795-U6.10  0.72
2003 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Goodarzi A, Robertson M. Low temperature crystallization of germanium on plastic by externally applied compressive stress Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 752-755. DOI: 10.1116/1.1569923  0.72
2003 Shahrjerdi D, Hekmatshoar B, Khakifirooz A, Fathipour M. An approach to low-cost fabrication of lateral COOLMOS structures 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 272-273. DOI: 10.1109/ISDRS.2003.1272093  0.72
2003 Shahrjerdi D, Hekmatshoar B, Talaie M, Shoaei O. A fast settling, high DC gain, low power OPAMP design for high resolution, high speed A/D converters Proceedings of the International Conference On Microelectronics, Icm. 2003: 207-210. DOI: 10.1109/ICM.2003.238614  0.72
2003 Shahrjerdi D, Hekmatshoar B, Mohajerzadeh S, Darbari S. Low temperature fabrication of high mobility poly-Ge TFTs on plastic Proceedings of the International Conference On Microelectronics, Icm. 2003: 361-364. DOI: 10.1109/ICM.2003.237966  0.72
2003 Makki BS, Kargar M, Mohajerzadeh S, Maleki T, Shahrjerdi D. Application of PET plastics in micro-sensor fabrication Proceedings of the International Conference On Microelectronics, Icm. 2003: 357-360. DOI: 10.1109/ICM.2003.237932  0.72
2003 Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A. High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C Device Research Conference - Conference Digest, Drc. 2003: 85-86. DOI: 10.1109/DRC.2003.1226884  0.72
2003 Shahrjerdi D, Hekmatshoar B, Rezaee L, Mohajerzadeh SS. Low temperature stress-induced crystallization of germanium on plastic Thin Solid Films. 427: 330-334. DOI: 10.1016/S0040-6090(02)01200-2  0.72
2003 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Akhavan A, Robertson M. Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress Materials Research Society Symposium - Proceedings. 769: 183-188.  0.72
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