Rownak J. Zaman, Ph.D. - Publications

Affiliations: 
2008 Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850  0.52
2007 Zaman RJ, Mathews K, Quintanilla R, Banerjee SK. Comparison of tri-gate FET characteristics for various hydrogen annealing process conditions Proceedings - Ieee International Soi Conference. 139-140. DOI: 10.1109/SOI.2006.284474  0.52
2007 Zaman RJ, Mathews K, Xiong W, Banerjee SK. Trigate FET device characteristics improvement using a hydrogen anneal process with a novel hard mask approach Ieee Electron Device Letters. 28: 916-918. DOI: 10.1109/Led.2007.905964  0.52
2005 Zaman RJ, Xiong W, Quintanilla R, Schulz T, Cleavelin CR, Wise R, Pas M, Patruno P, Schruefer K, Banerjee SK. Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins Mrs Proceedings. 872: 37-41. DOI: 10.1557/Proc-872-J3.1  0.52
2005 Schulz T, Xiong W, Cleavelin CR, Schruefer K, Gostkowski M, Matthews K, Gebara G, Zaman RJ, Patruno P, Chaudhry A, Woo A, Colinge JP. Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs) Proceedings - Ieee International Soi Conference. 2005: 154-156. DOI: 10.1109/SOI.2005.1563571  0.52
2005 Xiong W, Rinn Cleavelin C, Wise R, Yu S, Pas M, Zaman RJ, Gostkowski M, Matthews K, Maleville C, Patruno P, King TJ, Colinge JP. Full/partial depletion effects in FinFETs Electronics Letters. 41: 504-506. DOI: 10.1049/El:20050281  0.52
2005 Zaman RJ, Xiong W, Quintanilla R, Schulz T, Rinn Cleavelin C, Wise R, Pas M, Patruno P, Schruefer K, Banerjee SK. Effects of hydrogen annealing process conditions on nano scale silicon (011) fins Materials Research Society Symposium Proceedings. 872: 37-41.  0.52
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