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Yanan Sun - Publications

Affiliations: 
2014 Electronic and Computer Engineering Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
 2014- Shanghai Jiao Tong University, Shanghai, Shanghai Shi, China 
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Sun Y, He W, Mao Z, Jiao H, Kursun V. Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density Ieee Transactions On Circuits and Systems. 67: 2431-2441. DOI: 10.1109/Tcsi.2020.2980074  0.682
2019 Sun Y, Gu J, He W, Wang Q, Jing N, Mao Z, Qian W, Jiang L. Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells Ieee Transactions On Circuits and Systems Ii-Express Briefs. 66: 753-757. DOI: 10.1109/Tcsii.2019.2908243  0.333
2018 Wang C, Sun Y, Hu S, Jiang L, Qian W. Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit Acm Transactions On Design Automation of Electronic Systems. 23: 1-27. DOI: 10.1145/3175500  0.428
2018 Sun Y, He W, Mao Z, Jiao H, Kursun V. Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory Ieee Transactions On Electron Devices. 65: 1230-1238. DOI: 10.1109/Ted.2018.2798667  0.688
2017 Sun Y, He W, Mao Z, Jiao H, Kursun V. High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes Ieee Transactions On Device and Materials Reliability. 17: 20-31. DOI: 10.1109/Tdmr.2017.2668761  0.689
2017 Jin W, He W, Jiang J, Huang H, Zhao X, Sun Y, Chen X, Jing N. A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS Integration. 58: 27-34. DOI: 10.1016/J.Vlsi.2017.02.001  0.302
2017 Sun Y, He W, Mao Z, Kursun V. Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic Microelectronics Journal. 62: 12-20. DOI: 10.1016/J.Mejo.2017.01.010  0.61
2014 Sun Y, Jiao H, Kursun V. A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. DOI: 10.1109/Tvlsi.2014.2350674  0.677
2014 Sun Y, Kursun V. Carbon nanotubes blowing new life into NP dynamic CMOS circuits Ieee Transactions On Circuits and Systems I: Regular Papers. 61: 420-428. DOI: 10.1109/Tcsi.2013.2268131  0.564
2011 Sun Y, Kursun V. N-Type carbon-nanotube MOSFET device profile optimization for very large scale integration Transactions On Electrical and Electronic Materials. 12: 43-50. DOI: 10.4313/Teem.2011.12.2.43  0.598
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